Abstract

In this paper, we studied the effect of temperature and mask margin size on optical emission and growth rate enhancement (GRE) of InGaN grown by metal organic chemical vapor deposition (MOCVD) and nano-selective-area growth (NSAG) on AlN-buffered Si(111). For all mask geometries and temperatures, NSAG produced 90% single-crystal InGaN nanopyramids with smooth facets, perfect selectivity, and 1.2 times the indium composition enhancement (23% and 33% for 800 °C and 780 °C NSAG, respectively) as found in non-NSAG planar growth at the same conditions. The vapor phase diffusion model was found to be insufficient to predict NSAG GRE, and we propose an explanation combining mechanisms from the vapor phase diffusion with surface migration models. A two-peak emission was noted for all NSAG. The total and relative intensities of the two peaks was found to be strongly dependent upon both temperature and local indium precursor concentration during growth, the latter of which varies based on mask margin size. In NSAG grown at lower temperature and with higher local indium precursor concentration, the bluer of the two peaks was more dominant and the overall emission intensity was higher. InGaN nanopyramids were chemically uniform, ruling out phase separation as origin of the double-peak. We propose an explanation based on the sudden transition from strained to relaxed growth moderated by temperature and local indium precursor concentration.

© 2017 Optical Society of America

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References

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    [Crossref]
  3. J. Zhang and N. Tansu, “Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates,” IEEE Photon. J. 5(2), 2600111 (2013).
    [Crossref]
  4. E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
    [Crossref]
  5. J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, “High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy,” Appl. Phys. Lett. 98, 131115 (2011).
    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  12. I. Gherasoiu, K. M. Yu, L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager, and W. Walukiewicz, “High quality InxGa1−xN thin films with x > 0.2 grown on silicon,” Phys. Status Solidi B 247(7), 1747–1749 (2010).
    [Crossref]
  13. A. Yamamoto, A. Mihara, Y. Zheng, and N. Shigekawa, “A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate,” Jpn. J. Appl. Phys. 52, 08JB19 (2013).
    [Crossref]
  14. T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6, 951–956 (2007).
    [Crossref] [PubMed]
  15. Y. Wang, K. Zang, S. Chua, M. S. Sander, S. Tripathy, and C. G. Fonstad, “High-Density Arrays of InGaN Nanorings, Nanodots, and Nanoarrows Fabricated by a Template-Assisted Approach,” J. Phys. Chem. B 110(23), 11081 (2006).
    [Crossref] [PubMed]
  16. Q. Li and G. T. Wang, “Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 97, 181107 (2010).
    [Crossref]
  17. H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96, 231104 (2010).
    [Crossref]
  18. D. Zubia, S. H. Zaidi, S. R. Brueck, and S. D. Hersee, “Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy,” Appl. Phys. Lett. 76, 858 (2000).
    [Crossref]
  19. J. W. Ho, R. J. N. Tan, M. Heuken, A. A. O. Tay, and S. J. Chua, “Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications,” J. Cryst. Growth 420, 64 (2015).
    [Crossref]
  20. K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui, “GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE,” Nanotechnology 24, 115304 (2013).
    [Crossref] [PubMed]
  21. S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
    [Crossref]
  22. J. Song, B. Leung, Y. Zhang, and J. Han, “Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition,” Nanotechnology 25, 225602 (2014).
    [Crossref] [PubMed]
  23. S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
    [Crossref]
  24. S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko, and A. Ougazzaden, “GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3,” J. Cryst. Growth 298, 428–432 (2007).
    [Crossref]
  25. M. Gibbon, J.P. Stages, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998 (1993).
    [Crossref]
  26. S. Strite and H. Morkoc, “GaN, AlN and InN: A Review,” J. Vac. Sci. Technol,. B 10, 1237–1266 (1992).
    [Crossref]
  27. S. Bedair, F. McIntosh, J. Roberts, E. Piner, K. Boutros, and N. ElMasry, “Growth and Characterization of In-based Nitride Compounds,” J. Cryst. Growth 178(1–2), 32–44 (1997).
    [Crossref]
  28. G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, and J.P. Salvestrini, “Bandgap energy bowing parameter of strained and relaxed InGaN layers,” Opt. Mater. Express 4(5), 1030–1041 (2014).
    [Crossref]
  29. T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
    [Crossref]
  30. S.M.S. Pereira, K.P. O’Donnell, and E.J.C. Alves, “Role of Nanoscale Strain Inhomogeneity on the Light Emission from InGaN Epilayers,” Adv. Funct. Mater. 17, 37–42 (2007).
    [Crossref]
  31. R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G.A.D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2004).
    [Crossref]
  32. Y. Taniyasu, Y. Watanabe, D.H. Lim, A.W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE,” Phys. Status Solidi A 176(1), 397 (1999).
    [Crossref]
  33. R. Liu and C. Bayram, “Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100),” Appl. Phys. Lett. 109, 042103 (2016).
    [Crossref]
  34. P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga-Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (1122) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi B 253(1), 105–111 (2016).
    [Crossref]

2017 (1)

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

2016 (3)

M. Arif, J-P. Salvestrini, J. Streque, M. B. Jordan, Y. El Gmili, S. Sundaram, X. Li, G. Patriarche, P. L. Voss, and A. Ougazzaden, “Role of V-pits in the performance improvement of InGaN solar cells,” Appl. Phys. Lett. 109, 133507 (2016).
[Crossref]

R. Liu and C. Bayram, “Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100),” Appl. Phys. Lett. 109, 042103 (2016).
[Crossref]

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga-Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (1122) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi B 253(1), 105–111 (2016).
[Crossref]

2015 (2)

S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
[Crossref]

J. W. Ho, R. J. N. Tan, M. Heuken, A. A. O. Tay, and S. J. Chua, “Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications,” J. Cryst. Growth 420, 64 (2015).
[Crossref]

2014 (4)

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

J. Song, B. Leung, Y. Zhang, and J. Han, “Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition,” Nanotechnology 25, 225602 (2014).
[Crossref] [PubMed]

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy, “Effect of the quantum well thickness on the performance of InGaN photovoltaic cells,” Appl. Phys. Lett. 105(13), 131105 (2014).
[Crossref]

G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, and J.P. Salvestrini, “Bandgap energy bowing parameter of strained and relaxed InGaN layers,” Opt. Mater. Express 4(5), 1030–1041 (2014).
[Crossref]

2013 (5)

Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaram, G. Patriarche, J. Hester, A. Ahaitouf, J. P. Salvestrini, and A. Ougazzaden, “Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study,” Acta Mater. 61, 6587–6596 (2013).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, D. Troadec, J-P. Salvestrini, and A. Ougazzaden, “Characteristics of the surface microstructures in thick InGaN layers on GaN,” Opt. Mater. Express 3, 1111–1118 (2013).
[Crossref]

J. Zhang and N. Tansu, “Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates,” IEEE Photon. J. 5(2), 2600111 (2013).
[Crossref]

K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui, “GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE,” Nanotechnology 24, 115304 (2013).
[Crossref] [PubMed]

A. Yamamoto, A. Mihara, Y. Zheng, and N. Shigekawa, “A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate,” Jpn. J. Appl. Phys. 52, 08JB19 (2013).
[Crossref]

2012 (3)

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett. 100, 021104 (2012).
[Crossref]

A. G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, “MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content,” Phys. Status Solidi C 9(3–4), 670–672 (2012).
[Crossref]

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

2011 (3)

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys. 110, 113110 (2011).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, “High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy,” Appl. Phys. Lett. 98, 131115 (2011).
[Crossref]

2010 (3)

I. Gherasoiu, K. M. Yu, L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager, and W. Walukiewicz, “High quality InxGa1−xN thin films with x > 0.2 grown on silicon,” Phys. Status Solidi B 247(7), 1747–1749 (2010).
[Crossref]

Q. Li and G. T. Wang, “Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 97, 181107 (2010).
[Crossref]

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96, 231104 (2010).
[Crossref]

2007 (3)

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6, 951–956 (2007).
[Crossref] [PubMed]

S.M.S. Pereira, K.P. O’Donnell, and E.J.C. Alves, “Role of Nanoscale Strain Inhomogeneity on the Light Emission from InGaN Epilayers,” Adv. Funct. Mater. 17, 37–42 (2007).
[Crossref]

S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko, and A. Ougazzaden, “GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3,” J. Cryst. Growth 298, 428–432 (2007).
[Crossref]

2006 (1)

Y. Wang, K. Zang, S. Chua, M. S. Sander, S. Tripathy, and C. G. Fonstad, “High-Density Arrays of InGaN Nanorings, Nanodots, and Nanoarrows Fabricated by a Template-Assisted Approach,” J. Phys. Chem. B 110(23), 11081 (2006).
[Crossref] [PubMed]

2004 (1)

R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G.A.D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2004).
[Crossref]

2000 (1)

D. Zubia, S. H. Zaidi, S. R. Brueck, and S. D. Hersee, “Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy,” Appl. Phys. Lett. 76, 858 (2000).
[Crossref]

1999 (1)

Y. Taniyasu, Y. Watanabe, D.H. Lim, A.W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE,” Phys. Status Solidi A 176(1), 397 (1999).
[Crossref]

1997 (1)

S. Bedair, F. McIntosh, J. Roberts, E. Piner, K. Boutros, and N. ElMasry, “Growth and Characterization of In-based Nitride Compounds,” J. Cryst. Growth 178(1–2), 32–44 (1997).
[Crossref]

1993 (1)

M. Gibbon, J.P. Stages, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998 (1993).
[Crossref]

1992 (1)

S. Strite and H. Morkoc, “GaN, AlN and InN: A Review,” J. Vac. Sci. Technol,. B 10, 1237–1266 (1992).
[Crossref]

Abderrahim, R.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

Ager, J. W.

I. Gherasoiu, K. M. Yu, L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager, and W. Walukiewicz, “High quality InxGa1−xN thin films with x > 0.2 grown on silicon,” Phys. Status Solidi B 247(7), 1747–1749 (2010).
[Crossref]

Ahaitouf, A.

Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaram, G. Patriarche, J. Hester, A. Ahaitouf, J. P. Salvestrini, and A. Ougazzaden, “Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study,” Acta Mater. 61, 6587–6596 (2013).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, D. Troadec, J-P. Salvestrini, and A. Ougazzaden, “Characteristics of the surface microstructures in thick InGaN layers on GaN,” Opt. Mater. Express 3, 1111–1118 (2013).
[Crossref]

Ajay, A.

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy, “Effect of the quantum well thickness on the performance of InGaN photovoltaic cells,” Appl. Phys. Lett. 105(13), 131105 (2014).
[Crossref]

Al-Heji, A. A.

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

Aloni, S.

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6, 951–956 (2007).
[Crossref] [PubMed]

Alves, E.J.C.

S.M.S. Pereira, K.P. O’Donnell, and E.J.C. Alves, “Role of Nanoscale Strain Inhomogeneity on the Light Emission from InGaN Epilayers,” Adv. Funct. Mater. 17, 37–42 (2007).
[Crossref]

Arif, M.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

M. Arif, J-P. Salvestrini, J. Streque, M. B. Jordan, Y. El Gmili, S. Sundaram, X. Li, G. Patriarche, P. L. Voss, and A. Ougazzaden, “Role of V-pits in the performance improvement of InGaN solar cells,” Appl. Phys. Lett. 109, 133507 (2016).
[Crossref]

Bayram, C.

R. Liu and C. Bayram, “Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100),” Appl. Phys. Lett. 109, 042103 (2016).
[Crossref]

Bedair, S.

S. Bedair, F. McIntosh, J. Roberts, E. Piner, K. Boutros, and N. ElMasry, “Growth and Characterization of In-based Nitride Compounds,” J. Cryst. Growth 178(1–2), 32–44 (1997).
[Crossref]

Belahsene, S.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

Bhuiyan, A. G.

A. G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, “MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content,” Phys. Status Solidi C 9(3–4), 670–672 (2012).
[Crossref]

Bonanno, P. L.

S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
[Crossref]

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

Bougerol, C.

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy, “Effect of the quantum well thickness on the performance of InGaN photovoltaic cells,” Appl. Phys. Lett. 105(13), 131105 (2014).
[Crossref]

Boutros, K.

S. Bedair, F. McIntosh, J. Roberts, E. Piner, K. Boutros, and N. ElMasry, “Growth and Characterization of In-based Nitride Compounds,” J. Cryst. Growth 178(1–2), 32–44 (1997).
[Crossref]

Briggs, G.A.D.

R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G.A.D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2004).
[Crossref]

Brueck, S. R.

D. Zubia, S. H. Zaidi, S. R. Brueck, and S. D. Hersee, “Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy,” Appl. Phys. Lett. 76, 858 (2000).
[Crossref]

Cai, Z.-H.

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

Chen, X.

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

Chew, A.

M. Gibbon, J.P. Stages, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998 (1993).
[Crossref]

Chua, S.

Y. Wang, K. Zang, S. Chua, M. S. Sander, S. Tripathy, and C. G. Fonstad, “High-Density Arrays of InGaN Nanorings, Nanodots, and Nanoarrows Fabricated by a Template-Assisted Approach,” J. Phys. Chem. B 110(23), 11081 (2006).
[Crossref] [PubMed]

Chua, S. J.

J. W. Ho, R. J. N. Tan, M. Heuken, A. A. O. Tay, and S. J. Chua, “Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications,” J. Cryst. Growth 420, 64 (2015).
[Crossref]

Collis, N.

M. Gibbon, J.P. Stages, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998 (1993).
[Crossref]

Cruz, S. C.

J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, “High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy,” Appl. Phys. Lett. 98, 131115 (2011).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

Cureton, C.G.

M. Gibbon, J.P. Stages, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998 (1993).
[Crossref]

de Mierry, P.

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga-Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (1122) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi B 253(1), 105–111 (2016).
[Crossref]

DenBaars, S.

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

DenBaars, S. P.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett. 100, 021104 (2012).
[Crossref]

Djebbour, Z.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

Djerboub, R.

Durand, C.

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy, “Effect of the quantum well thickness on the performance of InGaN photovoltaic cells,” Appl. Phys. Lett. 105(13), 131105 (2014).
[Crossref]

El Gmili, Y.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

M. Arif, J-P. Salvestrini, J. Streque, M. B. Jordan, Y. El Gmili, S. Sundaram, X. Li, G. Patriarche, P. L. Voss, and A. Ougazzaden, “Role of V-pits in the performance improvement of InGaN solar cells,” Appl. Phys. Lett. 109, 133507 (2016).
[Crossref]

S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
[Crossref]

G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, and J.P. Salvestrini, “Bandgap energy bowing parameter of strained and relaxed InGaN layers,” Opt. Mater. Express 4(5), 1030–1041 (2014).
[Crossref]

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaram, G. Patriarche, J. Hester, A. Ahaitouf, J. P. Salvestrini, and A. Ougazzaden, “Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study,” Acta Mater. 61, 6587–6596 (2013).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, D. Troadec, J-P. Salvestrini, and A. Ougazzaden, “Characteristics of the surface microstructures in thick InGaN layers on GaN,” Opt. Mater. Express 3, 1111–1118 (2013).
[Crossref]

Elhuni, W.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

ElMasry, N.

S. Bedair, F. McIntosh, J. Roberts, E. Piner, K. Boutros, and N. ElMasry, “Growth and Characterization of In-based Nitride Compounds,” J. Cryst. Growth 178(1–2), 32–44 (1997).
[Crossref]

Esaki, T.

A. G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, “MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content,” Phys. Status Solidi C 9(3–4), 670–672 (2012).
[Crossref]

Eymery, J.

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy, “Effect of the quantum well thickness on the performance of InGaN photovoltaic cells,” Appl. Phys. Lett. 105(13), 131105 (2014).
[Crossref]

Farrell, R. M.

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

Faure-Vincent, J.

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy, “Effect of the quantum well thickness on the performance of InGaN photovoltaic cells,” Appl. Phys. Lett. 105(13), 131105 (2014).
[Crossref]

Feezell, D. F.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett. 100, 021104 (2012).
[Crossref]

Fonstad, C. G.

Y. Wang, K. Zang, S. Chua, M. S. Sander, S. Tripathy, and C. G. Fonstad, “High-Density Arrays of InGaN Nanorings, Nanodots, and Nanoarrows Fabricated by a Template-Assisted Approach,” J. Phys. Chem. B 110(23), 11081 (2006).
[Crossref] [PubMed]

Fressengeas, N.

Fujito, K.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett. 100, 021104 (2012).
[Crossref]

Fukui, T.

K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui, “GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE,” Nanotechnology 24, 115304 (2013).
[Crossref] [PubMed]

Gautier, S.

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, D. Troadec, J-P. Salvestrini, and A. Ougazzaden, “Characteristics of the surface microstructures in thick InGaN layers on GaN,” Opt. Mater. Express 3, 1111–1118 (2013).
[Crossref]

S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko, and A. Ougazzaden, “GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3,” J. Cryst. Growth 298, 428–432 (2007).
[Crossref]

Gherasoiu, I.

I. Gherasoiu, K. M. Yu, L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager, and W. Walukiewicz, “High quality InxGa1−xN thin films with x > 0.2 grown on silicon,” Phys. Status Solidi B 247(7), 1747–1749 (2010).
[Crossref]

Gibbon, M.

M. Gibbon, J.P. Stages, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998 (1993).
[Crossref]

Han, J.

J. Song, B. Leung, Y. Zhang, and J. Han, “Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition,” Nanotechnology 25, 225602 (2014).
[Crossref] [PubMed]

Hardy, M. T.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett. 100, 021104 (2012).
[Crossref]

Hashimoto, A.

A. G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, “MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content,” Phys. Status Solidi C 9(3–4), 670–672 (2012).
[Crossref]

Hawkridge, M.

I. Gherasoiu, K. M. Yu, L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager, and W. Walukiewicz, “High quality InxGa1−xN thin films with x > 0.2 grown on silicon,” Phys. Status Solidi B 247(7), 1747–1749 (2010).
[Crossref]

Hersee, S. D.

D. Zubia, S. H. Zaidi, S. R. Brueck, and S. D. Hersee, “Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy,” Appl. Phys. Lett. 76, 858 (2000).
[Crossref]

Hester, J.

Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaram, G. Patriarche, J. Hester, A. Ahaitouf, J. P. Salvestrini, and A. Ougazzaden, “Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study,” Acta Mater. 61, 6587–6596 (2013).
[Crossref]

Heuken, M.

J. W. Ho, R. J. N. Tan, M. Heuken, A. A. O. Tay, and S. J. Chua, “Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications,” J. Cryst. Growth 420, 64 (2015).
[Crossref]

Himwas, C.

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy, “Effect of the quantum well thickness on the performance of InGaN photovoltaic cells,” Appl. Phys. Lett. 105(13), 131105 (2014).
[Crossref]

Ho, J. W.

J. W. Ho, R. J. N. Tan, M. Heuken, A. A. O. Tay, and S. J. Chua, “Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications,” J. Cryst. Growth 420, 64 (2015).
[Crossref]

Hoffmann, V.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Hsu, P. S.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett. 100, 021104 (2012).
[Crossref]

Humphreys, C. J.

R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G.A.D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2004).
[Crossref]

Hurni, C. A.

J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, “High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy,” Appl. Phys. Lett. 98, 131115 (2011).
[Crossref]

Ikejiri, K.

K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui, “GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE,” Nanotechnology 24, 115304 (2013).
[Crossref] [PubMed]

Ishizaka, F.

K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui, “GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE,” Nanotechnology 24, 115304 (2013).
[Crossref] [PubMed]

Iza, M.

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

Jia, A.W.

Y. Taniyasu, Y. Watanabe, D.H. Lim, A.W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE,” Phys. Status Solidi A 176(1), 397 (1999).
[Crossref]

Jones, C.J.

M. Gibbon, J.P. Stages, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998 (1993).
[Crossref]

Jordan, M. B.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

M. Arif, J-P. Salvestrini, J. Streque, M. B. Jordan, Y. El Gmili, S. Sundaram, X. Li, G. Patriarche, P. L. Voss, and A. Ougazzaden, “Role of V-pits in the performance improvement of InGaN solar cells,” Appl. Phys. Lett. 109, 133507 (2016).
[Crossref]

Kao, V. M.

I. Gherasoiu, K. M. Yu, L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager, and W. Walukiewicz, “High quality InxGa1−xN thin films with x > 0.2 grown on silicon,” Phys. Status Solidi B 247(7), 1747–1749 (2010).
[Crossref]

Kappei, L.

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga-Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (1122) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi B 253(1), 105–111 (2016).
[Crossref]

Kappers, M. J.

R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G.A.D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2004).
[Crossref]

Kato, Y.

Y. Taniyasu, Y. Watanabe, D.H. Lim, A.W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE,” Phys. Status Solidi A 176(1), 397 (1999).
[Crossref]

Keller, S.

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

Kikuchi, A.

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96, 231104 (2010).
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T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
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T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6, 951–956 (2007).
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J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, “High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy,” Appl. Phys. Lett. 98, 131115 (2011).
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P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga-Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (1122) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi B 253(1), 105–111 (2016).
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J. Song, B. Leung, Y. Zhang, and J. Han, “Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition,” Nanotechnology 25, 225602 (2014).
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M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
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M. Arif, J-P. Salvestrini, J. Streque, M. B. Jordan, Y. El Gmili, S. Sundaram, X. Li, G. Patriarche, P. L. Voss, and A. Ougazzaden, “Role of V-pits in the performance improvement of InGaN solar cells,” Appl. Phys. Lett. 109, 133507 (2016).
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S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
[Crossref]

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

Lim, D.H.

Y. Taniyasu, Y. Watanabe, D.H. Lim, A.W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE,” Phys. Status Solidi A 176(1), 397 (1999).
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Liu, R.

R. Liu and C. Bayram, “Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100),” Appl. Phys. Lett. 109, 042103 (2016).
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M. Gibbon, J.P. Stages, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998 (1993).
[Crossref]

Martin, J.

S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko, and A. Ougazzaden, “GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3,” J. Cryst. Growth 298, 428–432 (2007).
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Matioli, E.

J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, “High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy,” Appl. Phys. Lett. 98, 131115 (2011).
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E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
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McIntosh, F.

S. Bedair, F. McIntosh, J. Roberts, E. Piner, K. Boutros, and N. ElMasry, “Growth and Characterization of In-based Nitride Compounds,” J. Cryst. Growth 178(1–2), 32–44 (1997).
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Migan, A.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
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A. Yamamoto, A. Mihara, Y. Zheng, and N. Shigekawa, “A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate,” Jpn. J. Appl. Phys. 52, 08JB19 (2013).
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A. G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, “MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content,” Phys. Status Solidi C 9(3–4), 670–672 (2012).
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Mishra, U.

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

Mishra, U. K.

J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, “High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy,” Appl. Phys. Lett. 98, 131115 (2011).
[Crossref]

Monroy, E.

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy, “Effect of the quantum well thickness on the performance of InGaN photovoltaic cells,” Appl. Phys. Lett. 105(13), 131105 (2014).
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S. Strite and H. Morkoc, “GaN, AlN and InN: A Review,” J. Vac. Sci. Technol,. B 10, 1237–1266 (1992).
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Moudakir, T.

Mukhtarova, A.

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy, “Effect of the quantum well thickness on the performance of InGaN photovoltaic cells,” Appl. Phys. Lett. 105(13), 131105 (2014).
[Crossref]

Nakamura, S.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett. 100, 021104 (2012).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

Netzel, C.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Neufeld, C.

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

Neufeld, C. J.

J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, “High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy,” Appl. Phys. Lett. 98, 131115 (2011).
[Crossref]

O’Donnell, K.P.

S.M.S. Pereira, K.P. O’Donnell, and E.J.C. Alves, “Role of Nanoscale Strain Inhomogeneity on the Light Emission from InGaN Epilayers,” Adv. Funct. Mater. 17, 37–42 (2007).
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R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G.A.D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2004).
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G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, and J.P. Salvestrini, “Bandgap energy bowing parameter of strained and relaxed InGaN layers,” Opt. Mater. Express 4(5), 1030–1041 (2014).
[Crossref]

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaram, G. Patriarche, J. Hester, A. Ahaitouf, J. P. Salvestrini, and A. Ougazzaden, “Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study,” Acta Mater. 61, 6587–6596 (2013).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, D. Troadec, J-P. Salvestrini, and A. Ougazzaden, “Characteristics of the surface microstructures in thick InGaN layers on GaN,” Opt. Mater. Express 3, 1111–1118 (2013).
[Crossref]

Ougazzaden, A.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

M. Arif, J-P. Salvestrini, J. Streque, M. B. Jordan, Y. El Gmili, S. Sundaram, X. Li, G. Patriarche, P. L. Voss, and A. Ougazzaden, “Role of V-pits in the performance improvement of InGaN solar cells,” Appl. Phys. Lett. 109, 133507 (2016).
[Crossref]

S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
[Crossref]

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, and J.P. Salvestrini, “Bandgap energy bowing parameter of strained and relaxed InGaN layers,” Opt. Mater. Express 4(5), 1030–1041 (2014).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, D. Troadec, J-P. Salvestrini, and A. Ougazzaden, “Characteristics of the surface microstructures in thick InGaN layers on GaN,” Opt. Mater. Express 3, 1111–1118 (2013).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaram, G. Patriarche, J. Hester, A. Ahaitouf, J. P. Salvestrini, and A. Ougazzaden, “Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study,” Acta Mater. 61, 6587–6596 (2013).
[Crossref]

S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko, and A. Ougazzaden, “GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3,” J. Cryst. Growth 298, 428–432 (2007).
[Crossref]

Ould-Saad, S.

S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko, and A. Ougazzaden, “GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3,” J. Cryst. Growth 298, 428–432 (2007).
[Crossref]

Pantzas, K.

S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
[Crossref]

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaram, G. Patriarche, J. Hester, A. Ahaitouf, J. P. Salvestrini, and A. Ougazzaden, “Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study,” Acta Mater. 61, 6587–6596 (2013).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, D. Troadec, J-P. Salvestrini, and A. Ougazzaden, “Characteristics of the surface microstructures in thick InGaN layers on GaN,” Opt. Mater. Express 3, 1111–1118 (2013).
[Crossref]

Patriarche, G.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

M. Arif, J-P. Salvestrini, J. Streque, M. B. Jordan, Y. El Gmili, S. Sundaram, X. Li, G. Patriarche, P. L. Voss, and A. Ougazzaden, “Role of V-pits in the performance improvement of InGaN solar cells,” Appl. Phys. Lett. 109, 133507 (2016).
[Crossref]

S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
[Crossref]

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaram, G. Patriarche, J. Hester, A. Ahaitouf, J. P. Salvestrini, and A. Ougazzaden, “Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study,” Acta Mater. 61, 6587–6596 (2013).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, D. Troadec, J-P. Salvestrini, and A. Ougazzaden, “Characteristics of the surface microstructures in thick InGaN layers on GaN,” Opt. Mater. Express 3, 1111–1118 (2013).
[Crossref]

Pereira, S.M.S.

S.M.S. Pereira, K.P. O’Donnell, and E.J.C. Alves, “Role of Nanoscale Strain Inhomogeneity on the Light Emission from InGaN Epilayers,” Adv. Funct. Mater. 17, 37–42 (2007).
[Crossref]

Piner, E.

S. Bedair, F. McIntosh, J. Roberts, E. Piner, K. Boutros, and N. ElMasry, “Growth and Characterization of In-based Nitride Compounds,” J. Cryst. Growth 178(1–2), 32–44 (1997).
[Crossref]

Ploch, S.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Pritchards, R.E.

M. Gibbon, J.P. Stages, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998 (1993).
[Crossref]

Puybaret, R.

S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
[Crossref]

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

Rass, J.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Redaelli, L.

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy, “Effect of the quantum well thickness on the performance of InGaN photovoltaic cells,” Appl. Phys. Lett. 105(13), 131105 (2014).
[Crossref]

Reichertz, L. A.

I. Gherasoiu, K. M. Yu, L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager, and W. Walukiewicz, “High quality InxGa1−xN thin films with x > 0.2 grown on silicon,” Phys. Status Solidi B 247(7), 1747–1749 (2010).
[Crossref]

Roberts, J.

S. Bedair, F. McIntosh, J. Roberts, E. Piner, K. Boutros, and N. ElMasry, “Growth and Characterization of In-based Nitride Compounds,” J. Cryst. Growth 178(1–2), 32–44 (1997).
[Crossref]

Romanov, A. E.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett. 100, 021104 (2012).
[Crossref]

Salvestrini, J. P.

S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
[Crossref]

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaram, G. Patriarche, J. Hester, A. Ahaitouf, J. P. Salvestrini, and A. Ougazzaden, “Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study,” Acta Mater. 61, 6587–6596 (2013).
[Crossref]

Salvestrini, J.P.

Salvestrini, J-P.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

M. Arif, J-P. Salvestrini, J. Streque, M. B. Jordan, Y. El Gmili, S. Sundaram, X. Li, G. Patriarche, P. L. Voss, and A. Ougazzaden, “Role of V-pits in the performance improvement of InGaN solar cells,” Appl. Phys. Lett. 109, 133507 (2016).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, D. Troadec, J-P. Salvestrini, and A. Ougazzaden, “Characteristics of the surface microstructures in thick InGaN layers on GaN,” Opt. Mater. Express 3, 1111–1118 (2013).
[Crossref]

Sander, M. S.

Y. Wang, K. Zang, S. Chua, M. S. Sander, S. Tripathy, and C. G. Fonstad, “High-Density Arrays of InGaN Nanorings, Nanodots, and Nanoarrows Fabricated by a Template-Assisted Approach,” J. Phys. Chem. B 110(23), 11081 (2006).
[Crossref] [PubMed]

Sartel, C.

S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko, and A. Ougazzaden, “GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3,” J. Cryst. Growth 298, 428–432 (2007).
[Crossref]

Schade, L.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Schwarz, U.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Sekiguchi, H.

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96, 231104 (2010).
[Crossref]

Shigekawa, N.

A. Yamamoto, A. Mihara, Y. Zheng, and N. Shigekawa, “A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate,” Jpn. J. Appl. Phys. 52, 08JB19 (2013).
[Crossref]

A. G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, “MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content,” Phys. Status Solidi C 9(3–4), 670–672 (2012).
[Crossref]

Shimotomai, M.

Y. Taniyasu, Y. Watanabe, D.H. Lim, A.W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE,” Phys. Status Solidi A 176(1), 397 (1999).
[Crossref]

Sirenko, A.

S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko, and A. Ougazzaden, “GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3,” J. Cryst. Growth 298, 428–432 (2007).
[Crossref]

Slaoui, A.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

Song, J.

J. Song, B. Leung, Y. Zhang, and J. Han, “Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition,” Nanotechnology 25, 225602 (2014).
[Crossref] [PubMed]

Speck, J.

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

Speck, J. S.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett. 100, 021104 (2012).
[Crossref]

J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, “High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy,” Appl. Phys. Lett. 98, 131115 (2011).
[Crossref]

Stages, J.P.

M. Gibbon, J.P. Stages, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998 (1993).
[Crossref]

Streque, J.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

M. Arif, J-P. Salvestrini, J. Streque, M. B. Jordan, Y. El Gmili, S. Sundaram, X. Li, G. Patriarche, P. L. Voss, and A. Ougazzaden, “Role of V-pits in the performance improvement of InGaN solar cells,” Appl. Phys. Lett. 109, 133507 (2016).
[Crossref]

G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, and J.P. Salvestrini, “Bandgap energy bowing parameter of strained and relaxed InGaN layers,” Opt. Mater. Express 4(5), 1030–1041 (2014).
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Strite, S.

S. Strite and H. Morkoc, “GaN, AlN and InN: A Review,” J. Vac. Sci. Technol,. B 10, 1237–1266 (1992).
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Sugita, K.

A. G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, “MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content,” Phys. Status Solidi C 9(3–4), 670–672 (2012).
[Crossref]

Sundaram, S.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

M. Arif, J-P. Salvestrini, J. Streque, M. B. Jordan, Y. El Gmili, S. Sundaram, X. Li, G. Patriarche, P. L. Voss, and A. Ougazzaden, “Role of V-pits in the performance improvement of InGaN solar cells,” Appl. Phys. Lett. 109, 133507 (2016).
[Crossref]

S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
[Crossref]

G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, and J.P. Salvestrini, “Bandgap energy bowing parameter of strained and relaxed InGaN layers,” Opt. Mater. Express 4(5), 1030–1041 (2014).
[Crossref]

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaram, G. Patriarche, J. Hester, A. Ahaitouf, J. P. Salvestrini, and A. Ougazzaden, “Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study,” Acta Mater. 61, 6587–6596 (2013).
[Crossref]

Takahashi, K.

Y. Taniyasu, Y. Watanabe, D.H. Lim, A.W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE,” Phys. Status Solidi A 176(1), 397 (1999).
[Crossref]

Tan, R. J. N.

J. W. Ho, R. J. N. Tan, M. Heuken, A. A. O. Tay, and S. J. Chua, “Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications,” J. Cryst. Growth 420, 64 (2015).
[Crossref]

Taniyasu, Y.

Y. Taniyasu, Y. Watanabe, D.H. Lim, A.W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE,” Phys. Status Solidi A 176(1), 397 (1999).
[Crossref]

Tansu, N.

J. Zhang and N. Tansu, “Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates,” IEEE Photon. J. 5(2), 2600111 (2013).
[Crossref]

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys. 110, 113110 (2011).
[Crossref]

Tay, A. A. O.

J. W. Ho, R. J. N. Tan, M. Heuken, A. A. O. Tay, and S. J. Chua, “Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications,” J. Cryst. Growth 420, 64 (2015).
[Crossref]

Tendille, F.

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga-Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (1122) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi B 253(1), 105–111 (2016).
[Crossref]

Thrush, E.J.

M. Gibbon, J.P. Stages, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998 (1993).
[Crossref]

Tomioka, K.

K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui, “GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE,” Nanotechnology 24, 115304 (2013).
[Crossref] [PubMed]

Tripathy, S.

Y. Wang, K. Zang, S. Chua, M. S. Sander, S. Tripathy, and C. G. Fonstad, “High-Density Arrays of InGaN Nanorings, Nanodots, and Nanoarrows Fabricated by a Template-Assisted Approach,” J. Phys. Chem. B 110(23), 11081 (2006).
[Crossref] [PubMed]

Troadec, D.

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, D. Troadec, J-P. Salvestrini, and A. Ougazzaden, “Characteristics of the surface microstructures in thick InGaN layers on GaN,” Opt. Mater. Express 3, 1111–1118 (2013).
[Crossref]

Ulrich, P.

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6, 951–956 (2007).
[Crossref] [PubMed]

Valdueza-Felip, S.

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy, “Effect of the quantum well thickness on the performance of InGaN photovoltaic cells,” Appl. Phys. Lett. 105(13), 131105 (2014).
[Crossref]

Vennéguès, P.

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga-Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (1122) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi B 253(1), 105–111 (2016).
[Crossref]

Voss, P. L.

M. Arif, J-P. Salvestrini, J. Streque, M. B. Jordan, Y. El Gmili, S. Sundaram, X. Li, G. Patriarche, P. L. Voss, and A. Ougazzaden, “Role of V-pits in the performance improvement of InGaN solar cells,” Appl. Phys. Lett. 109, 133507 (2016).
[Crossref]

S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
[Crossref]

S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
[Crossref]

Voss, P.L.

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

Walukiewicz, W.

I. Gherasoiu, K. M. Yu, L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager, and W. Walukiewicz, “High quality InxGa1−xN thin films with x > 0.2 grown on silicon,” Phys. Status Solidi B 247(7), 1747–1749 (2010).
[Crossref]

Wang, G. T.

Q. Li and G. T. Wang, “Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 97, 181107 (2010).
[Crossref]

Wang, Y.

Y. Wang, K. Zang, S. Chua, M. S. Sander, S. Tripathy, and C. G. Fonstad, “High-Density Arrays of InGaN Nanorings, Nanodots, and Nanoarrows Fabricated by a Template-Assisted Approach,” J. Phys. Chem. B 110(23), 11081 (2006).
[Crossref] [PubMed]

Watanabe, N.

A. G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, “MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content,” Phys. Status Solidi C 9(3–4), 670–672 (2012).
[Crossref]

Watanabe, Y.

Y. Taniyasu, Y. Watanabe, D.H. Lim, A.W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE,” Phys. Status Solidi A 176(1), 397 (1999).
[Crossref]

Weisbuch, C.

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
[Crossref]

Wernicke, T.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Weyers, M.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Wu, F.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett. 100, 021104 (2012).
[Crossref]

Yamamoto, A.

A. Yamamoto, A. Mihara, Y. Zheng, and N. Shigekawa, “A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate,” Jpn. J. Appl. Phys. 52, 08JB19 (2013).
[Crossref]

A. G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, “MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content,” Phys. Status Solidi C 9(3–4), 670–672 (2012).
[Crossref]

Yang, P.

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6, 951–956 (2007).
[Crossref] [PubMed]

Yokoyama, H.

A. G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, “MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content,” Phys. Status Solidi C 9(3–4), 670–672 (2012).
[Crossref]

Yoshikawa, A.

Y. Taniyasu, Y. Watanabe, D.H. Lim, A.W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE,” Phys. Status Solidi A 176(1), 397 (1999).
[Crossref]

Young, E. C.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett. 100, 021104 (2012).
[Crossref]

Yu, K. M.

I. Gherasoiu, K. M. Yu, L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager, and W. Walukiewicz, “High quality InxGa1−xN thin films with x > 0.2 grown on silicon,” Phys. Status Solidi B 247(7), 1747–1749 (2010).
[Crossref]

Zaidi, S. H.

D. Zubia, S. H. Zaidi, S. R. Brueck, and S. D. Hersee, “Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy,” Appl. Phys. Lett. 76, 858 (2000).
[Crossref]

Zang, K.

Y. Wang, K. Zang, S. Chua, M. S. Sander, S. Tripathy, and C. G. Fonstad, “High-Density Arrays of InGaN Nanorings, Nanodots, and Nanoarrows Fabricated by a Template-Assisted Approach,” J. Phys. Chem. B 110(23), 11081 (2006).
[Crossref] [PubMed]

Zhang, J.

J. Zhang and N. Tansu, “Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates,” IEEE Photon. J. 5(2), 2600111 (2013).
[Crossref]

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys. 110, 113110 (2011).
[Crossref]

Zhang, Y.

J. Song, B. Leung, Y. Zhang, and J. Han, “Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition,” Nanotechnology 25, 225602 (2014).
[Crossref] [PubMed]

Zheng, Y.

A. Yamamoto, A. Mihara, Y. Zheng, and N. Shigekawa, “A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate,” Jpn. J. Appl. Phys. 52, 08JB19 (2013).
[Crossref]

Zubia, D.

D. Zubia, S. H. Zaidi, S. R. Brueck, and S. D. Hersee, “Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy,” Appl. Phys. Lett. 76, 858 (2000).
[Crossref]

Zuniga-Perez, J.

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga-Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (1122) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi B 253(1), 105–111 (2016).
[Crossref]

Acta Mater. (1)

Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaram, G. Patriarche, J. Hester, A. Ahaitouf, J. P. Salvestrini, and A. Ougazzaden, “Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study,” Acta Mater. 61, 6587–6596 (2013).
[Crossref]

Adv. Funct. Mater. (1)

S.M.S. Pereira, K.P. O’Donnell, and E.J.C. Alves, “Role of Nanoscale Strain Inhomogeneity on the Light Emission from InGaN Epilayers,” Adv. Funct. Mater. 17, 37–42 (2007).
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Appl. Phys. Lett. (10)

R. Liu and C. Bayram, “Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100),” Appl. Phys. Lett. 109, 042103 (2016).
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S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates,” Appl. Phys. Lett. 107, 113105 (2015).
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Q. Li and G. T. Wang, “Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 97, 181107 (2010).
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H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96, 231104 (2010).
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D. Zubia, S. H. Zaidi, S. R. Brueck, and S. D. Hersee, “Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy,” Appl. Phys. Lett. 76, 858 (2000).
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E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98, 021102 (2011).
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J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, “High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy,” Appl. Phys. Lett. 98, 131115 (2011).
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M. Arif, J-P. Salvestrini, J. Streque, M. B. Jordan, Y. El Gmili, S. Sundaram, X. Li, G. Patriarche, P. L. Voss, and A. Ougazzaden, “Role of V-pits in the performance improvement of InGaN solar cells,” Appl. Phys. Lett. 109, 133507 (2016).
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P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett. 100, 021104 (2012).
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L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy, “Effect of the quantum well thickness on the performance of InGaN photovoltaic cells,” Appl. Phys. Lett. 105(13), 131105 (2014).
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IEEE Photon. J. (1)

J. Zhang and N. Tansu, “Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates,” IEEE Photon. J. 5(2), 2600111 (2013).
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J. Appl. Phys. (3)

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys. 110, 113110 (2011).
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S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden, “Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template,” J. Appl. Phys. 116, 163105 (2014).
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R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G.A.D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2004).
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J. Cryst. Growth (3)

S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko, and A. Ougazzaden, “GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3,” J. Cryst. Growth 298, 428–432 (2007).
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S. Bedair, F. McIntosh, J. Roberts, E. Piner, K. Boutros, and N. ElMasry, “Growth and Characterization of In-based Nitride Compounds,” J. Cryst. Growth 178(1–2), 32–44 (1997).
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J. W. Ho, R. J. N. Tan, M. Heuken, A. A. O. Tay, and S. J. Chua, “Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications,” J. Cryst. Growth 420, 64 (2015).
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J. Phys. Chem. B (1)

Y. Wang, K. Zang, S. Chua, M. S. Sander, S. Tripathy, and C. G. Fonstad, “High-Density Arrays of InGaN Nanorings, Nanodots, and Nanoarrows Fabricated by a Template-Assisted Approach,” J. Phys. Chem. B 110(23), 11081 (2006).
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J. Vac. Sci. Technol,. B (1)

S. Strite and H. Morkoc, “GaN, AlN and InN: A Review,” J. Vac. Sci. Technol,. B 10, 1237–1266 (1992).
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Jpn. J. Appl. Phys. (1)

A. Yamamoto, A. Mihara, Y. Zheng, and N. Shigekawa, “A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate,” Jpn. J. Appl. Phys. 52, 08JB19 (2013).
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Nanotechnology (2)

K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui, “GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE,” Nanotechnology 24, 115304 (2013).
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J. Song, B. Leung, Y. Zhang, and J. Han, “Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition,” Nanotechnology 25, 225602 (2014).
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Nat. Mater. (1)

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6, 951–956 (2007).
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Opt. Mater. Express (2)

Phys. Status Solidi A (1)

Y. Taniyasu, Y. Watanabe, D.H. Lim, A.W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE,” Phys. Status Solidi A 176(1), 397 (1999).
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Phys. Status Solidi B (2)

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga-Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (1122) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi B 253(1), 105–111 (2016).
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I. Gherasoiu, K. M. Yu, L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager, and W. Walukiewicz, “High quality InxGa1−xN thin films with x > 0.2 grown on silicon,” Phys. Status Solidi B 247(7), 1747–1749 (2010).
[Crossref]

Phys. Status Solidi C (1)

A. G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, “MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content,” Phys. Status Solidi C 9(3–4), 670–672 (2012).
[Crossref]

Semicond. Sci. Technol. (2)

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
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M. Gibbon, J.P. Stages, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998 (1993).
[Crossref]

Sol. Energ. Mat. Sol. Cells (1)

M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, Y. El Gmili, M. B. Jordan, X. Li, G. Patriarche, A. Slaoui, A. Migan, R. Abderrahim, Z. Djebbour, P.L. Voss, J-P. Salvestrini, and A. Ougazzaden, “Improving InGaN heterojunction solar cells efficiency using a semibulk absorber,” Sol. Energ. Mat. Sol. Cells 159, 405–411 (2017).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1

NSAG geometry (a) SEM image of a pattern of exposed HSQ (dark is SiO2) on a AlN/Si(111) substrate; the 1 μm margin pattern is shown. α and β are the only dimensions varied between different mask patterns. The inset shows a zoom on the right-hand side of the apertured region. All mask patterns use the same aperture size and spacing. (b, c and d) SEM image of 800 °C NSAG InGaN on the 1 μm-margin mask (α = 1 μm, β = 8 μm), 4 μm-margin mask (α = 4 μm, β = 2 μm) and 16 μm-margin mask (α = 16 μm, β = 2 μm), respectively.

Fig. 2
Fig. 2

Nanopyramid size analysis for all 3 margin sizes for 800 °C NSAG. (a,b and c) Size analysis for the 1, 4 and 16 μm margin growth, respectively. Figures have the same X-axis. (d) Simulated growth rate enhancement ratio for GaN and InN on the 4 μm margin growth based on the vapor phase diffusion model. X = 0 is the center of the NSAG area.

Fig. 3
Fig. 3

CL summary of representative InGaN nanopyramids registred at 5 keV in log10 scale. (a) Fits of CL spectra of the 800 °C InGaN nanopyramids grown on the 3 different margin sizes and of the unpatterned field growth. Solid curves are total fits, and the dashed and dotted curves are deconvoluted fits of the blue-shifted and redder peaks, respectively, and the dotted and dashed green curves are deconvoluted fits of the primary and defect band peaks of the unpatterned field growth, respectively. The field growth was measured very far from the masked regions in scanning mode instead of spot mode for nanopyramids. (b) Deconvoluted CL fits for the 780 °C InGaN nanopyramids and field.

Fig. 4
Fig. 4

(a) EDX mapping of the (11.0) plane of a representative InGaN nanopyramid grown at 800 °C. The uniform In distribution is characteristic of all nanopyramids, though non-emitting cubic insertions are occasionally present. (b) Cross sectional HAADF-STEM images of the same nanopyramid.

Fig. 5
Fig. 5

(a) Fits of depth-resolved CL spectra from 780 °C grown 16 μm margin InGAN NSAG. Solid curves are total fits, and the dashed and dotted curves are deconvoluted fits of the two nanopyramid peaks showing increasing predominance of the redder-emitting region closer to the surface. (b) Fits of 3 keV-excited (shallow) CL spectra for an inner (red curves) and outer (black curves) nanopyramid. Solid curves are total fits, and the dashed and dotted curves are deconvoluted fits of the two peaks showing an increased redder-peak intensity and much reduced bluer-peak intensity for the outer nanopyramid. (c) Total fits of CL spectra of the 780 °C field at various distances from the edge of the 16 μm margin mask edge. The red and blue dotted lines indicate the position of the redder and bluer peaks, respectively, of the two-peak emission, while the yellow line indicates the yellow defect band typical of 2D InGaN growth.

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