Abstract

We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 μm undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO2 thin film is deposited on top as a masking pattern layer. This layer is then covered with a 300 nm aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After oxalic acid etching, we transfer the hole pattern from the AAO layer to the SiO2 layer by reactive ion etching. Lastly, we utilize metal-organic chemical vapor deposition to grow GaN nanorods approximately 1.5 μm in size. We then grow two layers of InGaN/GaN double quantum wells on the semi-polar face of the GaN nanorod substrate under different temperatures. We then study the characteristics of the InGaN/GaN quantum wells formed on the semi-polar faces of GaN nanorods. We report the following findings from our study: first, using SiO2 with repeating hole pattern, we are able to grow high-quality GaN nanorods with diameters of approximately 80-120 nm; second, photoluminescence (PL) measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantum wells on the semi-polar face. We calculate the quantum wells’ cavity thickness with obtained PL measurements. Lastly, high resolution TEM images allow us to study the lattice structure characteristics of InGaN/GaN quantum wells on GaN nanorod and identify the existence of threading dislocations in the lattice structure that affects the GaN nanorod’s growth mechanism.

© 2017 Optical Society of America

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References

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  2. J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
    [Crossref]
  3. S. Muthu, F. J. P. Schuurmans, and M. D. Pashley, “Red, Green, and Blue LEDs for White Light Illumination,” IEEE J. Sel. Top. Quantum Electron. 8(2), 333–338 (2002).
    [Crossref]
  4. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, “Optical bandgap energy of wurtzite InN,” Appl. Phys. Lett. 81(7), 1246–1248 (2002).
    [Crossref]
  5. M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
    [Crossref]
  6. H. M. Ku, C. Y. Huang, C. Z. Liao, and S. Chao, “Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array,” Jpn. J. Appl. Phys. 50(4S), 04DG07 (2011).
    [Crossref]
  7. M. Haeberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111) Si using SiNx and AlGaN layers,” J. Phys. Conf. Ser. 209, 012017 (2010).
    [Crossref]
  8. L. C. Chen and W. F. Tsai, “Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching,” Nanoscale Res. Lett. 8(1), 157 (2013).
    [Crossref] [PubMed]
  9. H. Ohta, S. P. DenBaars, and S. Nakamura, “Future of group-III nitride semiconductor green laser diodes,” J. Opt. Soc. Am. 27(11), B45–B49 (2010).
    [Crossref]
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    [Crossref]
  11. K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
    [Crossref]
  12. Y. D. Wang, K. Y. Zang, and S. J. Chua, “Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures,” J. Appl. Phys. 100(5), 054306 (2006).
    [Crossref]
  13. N. Taşaltın, S. Öztürk, N. Kılınç, H. Yüzer, and Z. Z. Öztürk, “Simple fabrication of hexagonally well-ordered AAO template on silicon substrate in two dimensions,” Appl. Phys., A Mater. Sci. Process. 95(3), 781–787 (2009).
    [Crossref]
  14. H. C. Wang, T. Malinauskas, K. Jarasiunas, S. W. Feng, C. C. Ting, and S. Liu, “Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate,” Thin Solid Films 518(24), 7291–7294 (2010).
    [Crossref]
  15. S. W. Feng, L. W. Tu, J. I. Chyi, and H. C. Wang, “Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions,” Thin Solid Films 517(2), 909–915 (2008).
    [Crossref]
  16. Y. S. Chen, C. H. Liao, Y. C. Cheng, C. T. Kuo, and H. C. Wang, “Nanostructure Study of the Coalescence Growth of GaN Columns with Molecular Beam Epitaxy,” Opt. Mater. Express 3(9), 1450–1458 (2013).
    [Crossref]
  17. Y. S. Chen, C. H. Liao, Y. L. Chueh, C. C. Lai, L. Y. Chen, A. K. Chu, C. T. Kuo, and H. C. Wang, “High performance Cu2O/ZnO core-shell nanorod arrays synthesized using a nanoimprint GaN template by the hydrothermal growth technique,” Opt. Mater. Express 4(7), 1473–1486 (2014).
    [Crossref]
  18. N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi, “Growth and properties of semi-polar GaN on a patterned silicon substrate,” J. Cryst. Growth 311(10), 2867–2874 (2009).
    [Crossref]
  19. S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, and S. P. Den Baars, “Growth and characterization of bulk InGaN films and quantum wells,” Appl. Phys. Lett. 68(22), 3147–3149 (1996).
    [Crossref]
  20. Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
    [Crossref]
  21. H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97(3), 033704 (2005).
    [Crossref]
  22. Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
    [Crossref]
  23. C. Finger, T. Hempel, T. Christen, J. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate, Hums,” J. Appl. Phys. 101(3), 033113 (2007).
    [Crossref]
  24. L. Y. Chen, S. H. Chen, C. T. Kuo, and H. C. Wang, “Spectral design and evaluation of OLEDs as light sources,” Org. Electron. 15(10), 2194–2209 (2014).
    [Crossref]
  25. Y. S. Chen, W. Y. Shiao, T. Y. Tang, W. M. Chang, C. H. Liao, C. H. Lin, K. C. Shen, C. C. Yang, M. C. Hsu, J. H. Yeh, and T. C. Hsu, “Threading Dislocation Evolution in Patterned GaN Nanocolumn Growth and Coalescence Overgrowth,” J. Appl. Phys. 106(2), 023512 (2009).
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  26. Y. S. Chen, C. H. Liao, Y. L. Chueh, C. T. Kuo, and H. C. Wang, “Plan-View Transmission Electron Microscopy Study on Coalescence Overgrowth of GaN Nano-columns by MOCVD,” Opt. Mater. Express 3(9), 1459–1467 (2013).
    [Crossref]
  27. N. Sawaki and Y. Honda, “Semi-polar GaN LEDs on Si substrate,” Sci. China Technol. Sci. 54(1), 38–41 (2011).
    [Crossref]
  28. Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, “Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semi-polar GaN,” Appl. Phys. Lett. 98(5), 051902 (2011).
    [Crossref]
  29. R. Held, B. E. Ishaug, A. Parkhomovsky, A. M. Dabiran, and P. I. Cohen, “A rate equation model for the growth of GaN on GaN(0001) by molecular beam epitaxy,” J. Appl. Phys. 87(3), 1219–1226 (2000).
    [Crossref]
  30. C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
    [Crossref]
  31. J. S. Son, Y. Honda, M. Yamaguchi, and H. Amano, “Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask,” Jpn. J. Appl. Phys. 53(5S1), 05FL01 (2014).
    [Crossref]
  32. Z. Liliental-Weber, J. Jasinski, and D. N. Zakharov, “GaN grown in polar and non-polar directions,” Opto-Electron. Rev. 12(4), 339–346 (2004).
  33. Y. S. Chen, L. J. Yao, Y. L. Lin, L. Hung, C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, and C. C. Yang, “Transmission Electron Microscopy Study on Pre-strained InGaN/GaN Quantum Wells,” J. Cryst. Growth 297(1), 66–73 (2006).
    [Crossref]
  34. M. Sugiyama, T. Shioda, Y. Tomita, T. Yamamoto, Y. Ikuhara, and Y. Nakano, “Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth,” Mater. Trans. 50(5), 1085–1090 (2009).
    [Crossref]
  35. G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas, and Ph. Komninou, “Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire,” Phys. Status Solidi., A Appl. Mater. Sci. 210(1), 199–203 (2013).
    [Crossref]
  36. H. H. Liu, H. Y. Lin, C. Z. Liao, and J. I. Chyi, “Growth and Characterization of Crack-Free Semi-Polar (1-101) GaN on 7°-off (001) Si Substrates by Metal-Organic Chemical Vapor Deposition,” ECS Journal of Solid State Science and Technology 2(8), N3001–N3005 (2013).
    [Crossref]
  37. S. W. Feng, P. H. Liao, B. Leung, J. Han, F. W. Yang, and H. C. Wang, “Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes,” J. Appl. Phys. 118(4), 043104 (2015).
    [Crossref]
  38. M. C. Chen, Y. C. Cheng, C. Y. Huang, H. C. Wang, K. I. Lin, and Z. P. Yang, “The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs,” J. Lumin. 177, 59–64 (2016).
    [Crossref]
  39. Y. S. Chen, C. H. Liao, C. T. Kuo, R. C. C. Tsiang, and H. C. Wang, “Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD,” Nanoscale Res. Lett. 9(1), 334 (2014).
    [Crossref] [PubMed]
  40. H. C. Wang, X. Y. Yu, Y. L. Chueh, T. Malinauskas, K. Jarasiunas, and S. W. Feng, “Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample,” Opt. Express 19(20), 18893–18902 (2011).
    [Crossref] [PubMed]

2016 (1)

M. C. Chen, Y. C. Cheng, C. Y. Huang, H. C. Wang, K. I. Lin, and Z. P. Yang, “The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs,” J. Lumin. 177, 59–64 (2016).
[Crossref]

2015 (1)

S. W. Feng, P. H. Liao, B. Leung, J. Han, F. W. Yang, and H. C. Wang, “Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes,” J. Appl. Phys. 118(4), 043104 (2015).
[Crossref]

2014 (4)

Y. S. Chen, C. H. Liao, C. T. Kuo, R. C. C. Tsiang, and H. C. Wang, “Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD,” Nanoscale Res. Lett. 9(1), 334 (2014).
[Crossref] [PubMed]

J. S. Son, Y. Honda, M. Yamaguchi, and H. Amano, “Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask,” Jpn. J. Appl. Phys. 53(5S1), 05FL01 (2014).
[Crossref]

L. Y. Chen, S. H. Chen, C. T. Kuo, and H. C. Wang, “Spectral design and evaluation of OLEDs as light sources,” Org. Electron. 15(10), 2194–2209 (2014).
[Crossref]

Y. S. Chen, C. H. Liao, Y. L. Chueh, C. C. Lai, L. Y. Chen, A. K. Chu, C. T. Kuo, and H. C. Wang, “High performance Cu2O/ZnO core-shell nanorod arrays synthesized using a nanoimprint GaN template by the hydrothermal growth technique,” Opt. Mater. Express 4(7), 1473–1486 (2014).
[Crossref]

2013 (5)

L. C. Chen and W. F. Tsai, “Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching,” Nanoscale Res. Lett. 8(1), 157 (2013).
[Crossref] [PubMed]

Y. S. Chen, C. H. Liao, Y. L. Chueh, C. T. Kuo, and H. C. Wang, “Plan-View Transmission Electron Microscopy Study on Coalescence Overgrowth of GaN Nano-columns by MOCVD,” Opt. Mater. Express 3(9), 1459–1467 (2013).
[Crossref]

Y. S. Chen, C. H. Liao, Y. C. Cheng, C. T. Kuo, and H. C. Wang, “Nanostructure Study of the Coalescence Growth of GaN Columns with Molecular Beam Epitaxy,” Opt. Mater. Express 3(9), 1450–1458 (2013).
[Crossref]

G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas, and Ph. Komninou, “Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire,” Phys. Status Solidi., A Appl. Mater. Sci. 210(1), 199–203 (2013).
[Crossref]

H. H. Liu, H. Y. Lin, C. Z. Liao, and J. I. Chyi, “Growth and Characterization of Crack-Free Semi-Polar (1-101) GaN on 7°-off (001) Si Substrates by Metal-Organic Chemical Vapor Deposition,” ECS Journal of Solid State Science and Technology 2(8), N3001–N3005 (2013).
[Crossref]

2012 (1)

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
[Crossref]

2011 (4)

H. M. Ku, C. Y. Huang, C. Z. Liao, and S. Chao, “Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array,” Jpn. J. Appl. Phys. 50(4S), 04DG07 (2011).
[Crossref]

H. C. Wang, X. Y. Yu, Y. L. Chueh, T. Malinauskas, K. Jarasiunas, and S. W. Feng, “Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample,” Opt. Express 19(20), 18893–18902 (2011).
[Crossref] [PubMed]

N. Sawaki and Y. Honda, “Semi-polar GaN LEDs on Si substrate,” Sci. China Technol. Sci. 54(1), 38–41 (2011).
[Crossref]

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, “Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semi-polar GaN,” Appl. Phys. Lett. 98(5), 051902 (2011).
[Crossref]

2010 (3)

M. Haeberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111) Si using SiNx and AlGaN layers,” J. Phys. Conf. Ser. 209, 012017 (2010).
[Crossref]

H. Ohta, S. P. DenBaars, and S. Nakamura, “Future of group-III nitride semiconductor green laser diodes,” J. Opt. Soc. Am. 27(11), B45–B49 (2010).
[Crossref]

H. C. Wang, T. Malinauskas, K. Jarasiunas, S. W. Feng, C. C. Ting, and S. Liu, “Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate,” Thin Solid Films 518(24), 7291–7294 (2010).
[Crossref]

2009 (5)

N. Taşaltın, S. Öztürk, N. Kılınç, H. Yüzer, and Z. Z. Öztürk, “Simple fabrication of hexagonally well-ordered AAO template on silicon substrate in two dimensions,” Appl. Phys., A Mater. Sci. Process. 95(3), 781–787 (2009).
[Crossref]

N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi, “Growth and properties of semi-polar GaN on a patterned silicon substrate,” J. Cryst. Growth 311(10), 2867–2874 (2009).
[Crossref]

Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

M. Sugiyama, T. Shioda, Y. Tomita, T. Yamamoto, Y. Ikuhara, and Y. Nakano, “Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth,” Mater. Trans. 50(5), 1085–1090 (2009).
[Crossref]

2008 (2)

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

S. W. Feng, L. W. Tu, J. I. Chyi, and H. C. Wang, “Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions,” Thin Solid Films 517(2), 909–915 (2008).
[Crossref]

2007 (3)

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (10 −1 −1) Bulk GaN Substrates,” Jpn. J. Appl. Phys. 46(7), L129–L131 (2007).
[Crossref]

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

C. Finger, T. Hempel, T. Christen, J. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate, Hums,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

2006 (2)

Y. S. Chen, L. J. Yao, Y. L. Lin, L. Hung, C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, and C. C. Yang, “Transmission Electron Microscopy Study on Pre-strained InGaN/GaN Quantum Wells,” J. Cryst. Growth 297(1), 66–73 (2006).
[Crossref]

Y. D. Wang, K. Y. Zang, and S. J. Chua, “Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures,” J. Appl. Phys. 100(5), 054306 (2006).
[Crossref]

2005 (1)

H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97(3), 033704 (2005).
[Crossref]

2004 (1)

Z. Liliental-Weber, J. Jasinski, and D. N. Zakharov, “GaN grown in polar and non-polar directions,” Opto-Electron. Rev. 12(4), 339–346 (2004).

2003 (1)

J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
[Crossref]

2002 (2)

S. Muthu, F. J. P. Schuurmans, and M. D. Pashley, “Red, Green, and Blue LEDs for White Light Illumination,” IEEE J. Sel. Top. Quantum Electron. 8(2), 333–338 (2002).
[Crossref]

T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, “Optical bandgap energy of wurtzite InN,” Appl. Phys. Lett. 81(7), 1246–1248 (2002).
[Crossref]

2000 (1)

R. Held, B. E. Ishaug, A. Parkhomovsky, A. M. Dabiran, and P. I. Cohen, “A rate equation model for the growth of GaN on GaN(0001) by molecular beam epitaxy,” J. Appl. Phys. 87(3), 1219–1226 (2000).
[Crossref]

1996 (1)

S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, and S. P. Den Baars, “Growth and characterization of bulk InGaN films and quantum wells,” Appl. Phys. Lett. 68(22), 3147–3149 (1996).
[Crossref]

1993 (1)

S. Nakamura, M. Senoh, and T. Mukai, “P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes,” Jpn. J. Appl. Phys. 32(2), L8–L11 (1993).
[Crossref]

Abare, A. C.

S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, and S. P. Den Baars, “Growth and characterization of bulk InGaN films and quantum wells,” Appl. Phys. Lett. 68(22), 3147–3149 (1996).
[Crossref]

Adachi, M.

Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Ajagunna, A.

G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas, and Ph. Komninou, “Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire,” Phys. Status Solidi., A Appl. Mater. Sci. 210(1), 199–203 (2013).
[Crossref]

Akita, K.

Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Allsopp, D. W. E.

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
[Crossref]

Amano, H.

J. S. Son, Y. Honda, M. Yamaguchi, and H. Amano, “Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask,” Jpn. J. Appl. Phys. 53(5S1), 05FL01 (2014).
[Crossref]

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, “Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semi-polar GaN,” Appl. Phys. Lett. 98(5), 051902 (2011).
[Crossref]

Baker, T. J.

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

Bowen, C. R.

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
[Crossref]

Brinkfeldt, K.

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
[Crossref]

Chang, J. Y.

Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Chang, S. J.

J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
[Crossref]

Chao, C. L.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Chao, S.

H. M. Ku, C. Y. Huang, C. Z. Liao, and S. Chao, “Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array,” Jpn. J. Appl. Phys. 50(4S), 04DG07 (2011).
[Crossref]

Chen, C. Q.

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, “Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semi-polar GaN,” Appl. Phys. Lett. 98(5), 051902 (2011).
[Crossref]

Chen, L. C.

L. C. Chen and W. F. Tsai, “Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching,” Nanoscale Res. Lett. 8(1), 157 (2013).
[Crossref] [PubMed]

Chen, L. Y.

Chen, M. C.

M. C. Chen, Y. C. Cheng, C. Y. Huang, H. C. Wang, K. I. Lin, and Z. P. Yang, “The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs,” J. Lumin. 177, 59–64 (2016).
[Crossref]

Chen, S. H.

L. Y. Chen, S. H. Chen, C. T. Kuo, and H. C. Wang, “Spectral design and evaluation of OLEDs as light sources,” Org. Electron. 15(10), 2194–2209 (2014).
[Crossref]

Chen, Y. S.

Y. S. Chen, C. H. Liao, C. T. Kuo, R. C. C. Tsiang, and H. C. Wang, “Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD,” Nanoscale Res. Lett. 9(1), 334 (2014).
[Crossref] [PubMed]

Y. S. Chen, C. H. Liao, Y. L. Chueh, C. C. Lai, L. Y. Chen, A. K. Chu, C. T. Kuo, and H. C. Wang, “High performance Cu2O/ZnO core-shell nanorod arrays synthesized using a nanoimprint GaN template by the hydrothermal growth technique,” Opt. Mater. Express 4(7), 1473–1486 (2014).
[Crossref]

Y. S. Chen, C. H. Liao, Y. L. Chueh, C. T. Kuo, and H. C. Wang, “Plan-View Transmission Electron Microscopy Study on Coalescence Overgrowth of GaN Nano-columns by MOCVD,” Opt. Mater. Express 3(9), 1459–1467 (2013).
[Crossref]

Y. S. Chen, C. H. Liao, Y. C. Cheng, C. T. Kuo, and H. C. Wang, “Nanostructure Study of the Coalescence Growth of GaN Columns with Molecular Beam Epitaxy,” Opt. Mater. Express 3(9), 1450–1458 (2013).
[Crossref]

Y. S. Chen, L. J. Yao, Y. L. Lin, L. Hung, C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, and C. C. Yang, “Transmission Electron Microscopy Study on Pre-strained InGaN/GaN Quantum Wells,” J. Cryst. Growth 297(1), 66–73 (2006).
[Crossref]

H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97(3), 033704 (2005).
[Crossref]

Cheng, S. J.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Cheng, Y. C.

M. C. Chen, Y. C. Cheng, C. Y. Huang, H. C. Wang, K. I. Lin, and Z. P. Yang, “The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs,” J. Lumin. 177, 59–64 (2016).
[Crossref]

Y. S. Chen, C. H. Liao, Y. C. Cheng, C. T. Kuo, and H. C. Wang, “Nanostructure Study of the Coalescence Growth of GaN Columns with Molecular Beam Epitaxy,” Opt. Mater. Express 3(9), 1450–1458 (2013).
[Crossref]

Chi, G. C.

J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
[Crossref]

Chiu, C. H.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Christen, T.

C. Finger, T. Hempel, T. Christen, J. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate, Hums,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Chu, A. K.

Chua, S. J.

Y. D. Wang, K. Y. Zang, and S. J. Chua, “Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures,” J. Appl. Phys. 100(5), 054306 (2006).
[Crossref]

Chueh, Y. L.

Chyi, J. I.

H. H. Liu, H. Y. Lin, C. Z. Liao, and J. I. Chyi, “Growth and Characterization of Crack-Free Semi-Polar (1-101) GaN on 7°-off (001) Si Substrates by Metal-Organic Chemical Vapor Deposition,” ECS Journal of Solid State Science and Technology 2(8), N3001–N3005 (2013).
[Crossref]

S. W. Feng, L. W. Tu, J. I. Chyi, and H. C. Wang, “Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions,” Thin Solid Films 517(2), 909–915 (2008).
[Crossref]

H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97(3), 033704 (2005).
[Crossref]

Cohen, P. I.

R. Held, B. E. Ishaug, A. Parkhomovsky, A. M. Dabiran, and P. I. Cohen, “A rate equation model for the growth of GaN on GaN(0001) by molecular beam epitaxy,” J. Appl. Phys. 87(3), 1219–1226 (2000).
[Crossref]

Coldren, L. A.

S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, and S. P. Den Baars, “Growth and characterization of bulk InGaN films and quantum wells,” Appl. Phys. Lett. 68(22), 3147–3149 (1996).
[Crossref]

Dabiran, A. M.

R. Held, B. E. Ishaug, A. Parkhomovsky, A. M. Dabiran, and P. I. Cohen, “A rate equation model for the growth of GaN on GaN(0001) by molecular beam epitaxy,” J. Appl. Phys. 87(3), 1219–1226 (2000).
[Crossref]

Dadgar, J.

C. Finger, T. Hempel, T. Christen, J. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate, Hums,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Den Baars, S. P.

S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, and S. P. Den Baars, “Growth and characterization of bulk InGaN films and quantum wells,” Appl. Phys. Lett. 68(22), 3147–3149 (1996).
[Crossref]

DenBaars, S. P.

H. Ohta, S. P. DenBaars, and S. Nakamura, “Future of group-III nitride semiconductor green laser diodes,” J. Opt. Soc. Am. 27(11), B45–B49 (2010).
[Crossref]

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (10 −1 −1) Bulk GaN Substrates,” Jpn. J. Appl. Phys. 46(7), L129–L131 (2007).
[Crossref]

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

Dimitrakopulos, G. P.

G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas, and Ph. Komninou, “Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire,” Phys. Status Solidi., A Appl. Mater. Sci. 210(1), 199–203 (2013).
[Crossref]

Edwards, M. J.

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
[Crossref]

Fang, Y. Y.

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, “Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semi-polar GaN,” Appl. Phys. Lett. 98(5), 051902 (2011).
[Crossref]

Fellows, N. N.

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (10 −1 −1) Bulk GaN Substrates,” Jpn. J. Appl. Phys. 46(7), L129–L131 (2007).
[Crossref]

Feng, S. W.

S. W. Feng, P. H. Liao, B. Leung, J. Han, F. W. Yang, and H. C. Wang, “Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes,” J. Appl. Phys. 118(4), 043104 (2015).
[Crossref]

H. C. Wang, X. Y. Yu, Y. L. Chueh, T. Malinauskas, K. Jarasiunas, and S. W. Feng, “Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample,” Opt. Express 19(20), 18893–18902 (2011).
[Crossref] [PubMed]

H. C. Wang, T. Malinauskas, K. Jarasiunas, S. W. Feng, C. C. Ting, and S. Liu, “Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate,” Thin Solid Films 518(24), 7291–7294 (2010).
[Crossref]

S. W. Feng, L. W. Tu, J. I. Chyi, and H. C. Wang, “Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions,” Thin Solid Films 517(2), 909–915 (2008).
[Crossref]

Finger, C.

C. Finger, T. Hempel, T. Christen, J. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate, Hums,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Fujii, K.

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

Georgakilas, A.

G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas, and Ph. Komninou, “Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire,” Phys. Status Solidi., A Appl. Mater. Sci. 210(1), 199–203 (2013).
[Crossref]

Haeberlen, M.

M. Haeberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111) Si using SiNx and AlGaN layers,” J. Phys. Conf. Ser. 209, 012017 (2010).
[Crossref]

Han, J.

S. W. Feng, P. H. Liao, B. Leung, J. Han, F. W. Yang, and H. C. Wang, “Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes,” J. Appl. Phys. 118(4), 043104 (2015).
[Crossref]

Harima, H.

T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, “Optical bandgap energy of wurtzite InN,” Appl. Phys. Lett. 81(7), 1246–1248 (2002).
[Crossref]

Held, R.

R. Held, B. E. Ishaug, A. Parkhomovsky, A. M. Dabiran, and P. I. Cohen, “A rate equation model for the growth of GaN on GaN(0001) by molecular beam epitaxy,” J. Appl. Phys. 87(3), 1219–1226 (2000).
[Crossref]

Hempel, T.

C. Finger, T. Hempel, T. Christen, J. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate, Hums,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Hikosaka, T.

N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi, “Growth and properties of semi-polar GaN on a patterned silicon substrate,” J. Cryst. Growth 311(10), 2867–2874 (2009).
[Crossref]

Hoffmann, A.

C. Finger, T. Hempel, T. Christen, J. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate, Hums,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Honda, Y.

J. S. Son, Y. Honda, M. Yamaguchi, and H. Amano, “Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask,” Jpn. J. Appl. Phys. 53(5S1), 05FL01 (2014).
[Crossref]

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, “Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semi-polar GaN,” Appl. Phys. Lett. 98(5), 051902 (2011).
[Crossref]

N. Sawaki and Y. Honda, “Semi-polar GaN LEDs on Si substrate,” Sci. China Technol. Sci. 54(1), 38–41 (2011).
[Crossref]

N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi, “Growth and properties of semi-polar GaN on a patterned silicon substrate,” J. Cryst. Growth 311(10), 2867–2874 (2009).
[Crossref]

Huang, C. F.

Y. S. Chen, L. J. Yao, Y. L. Lin, L. Hung, C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, and C. C. Yang, “Transmission Electron Microscopy Study on Pre-strained InGaN/GaN Quantum Wells,” J. Cryst. Growth 297(1), 66–73 (2006).
[Crossref]

Huang, C. Y.

M. C. Chen, Y. C. Cheng, C. Y. Huang, H. C. Wang, K. I. Lin, and Z. P. Yang, “The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs,” J. Lumin. 177, 59–64 (2016).
[Crossref]

H. M. Ku, C. Y. Huang, C. Z. Liao, and S. Chao, “Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array,” Jpn. J. Appl. Phys. 50(4S), 04DG07 (2011).
[Crossref]

Huang, J. J.

Y. S. Chen, L. J. Yao, Y. L. Lin, L. Hung, C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, and C. C. Yang, “Transmission Electron Microscopy Study on Pre-strained InGaN/GaN Quantum Wells,” J. Cryst. Growth 297(1), 66–73 (2006).
[Crossref]

Humphreys, C. J.

M. Haeberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111) Si using SiNx and AlGaN layers,” J. Phys. Conf. Ser. 209, 012017 (2010).
[Crossref]

Hung, L.

Y. S. Chen, L. J. Yao, Y. L. Lin, L. Hung, C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, and C. C. Yang, “Transmission Electron Microscopy Study on Pre-strained InGaN/GaN Quantum Wells,” J. Cryst. Growth 297(1), 66–73 (2006).
[Crossref]

Ikegami, T.

Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Ikuhara, Y.

M. Sugiyama, T. Shioda, Y. Tomita, T. Yamamoto, Y. Ikuhara, and Y. Nakano, “Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth,” Mater. Trans. 50(5), 1085–1090 (2009).
[Crossref]

Ishaug, B. E.

R. Held, B. E. Ishaug, A. Parkhomovsky, A. M. Dabiran, and P. I. Cohen, “A rate equation model for the growth of GaN on GaN(0001) by molecular beam epitaxy,” J. Appl. Phys. 87(3), 1219–1226 (2000).
[Crossref]

Iwaki, Y.

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

Iza, M.

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (10 −1 −1) Bulk GaN Substrates,” Jpn. J. Appl. Phys. 46(7), L129–L131 (2007).
[Crossref]

Jarasiunas, K.

H. C. Wang, X. Y. Yu, Y. L. Chueh, T. Malinauskas, K. Jarasiunas, and S. W. Feng, “Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample,” Opt. Express 19(20), 18893–18902 (2011).
[Crossref] [PubMed]

H. C. Wang, T. Malinauskas, K. Jarasiunas, S. W. Feng, C. C. Ting, and S. Liu, “Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate,” Thin Solid Films 518(24), 7291–7294 (2010).
[Crossref]

Jasinski, J.

Z. Liliental-Weber, J. Jasinski, and D. N. Zakharov, “GaN grown in polar and non-polar directions,” Opto-Electron. Rev. 12(4), 339–346 (2004).

Johander, P.

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
[Crossref]

Kaeding, J.

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

Kapolnek, D.

S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, and S. P. Den Baars, “Growth and characterization of bulk InGaN films and quantum wells,” Appl. Phys. Lett. 68(22), 3147–3149 (1996).
[Crossref]

Kappers, M. J.

M. Haeberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111) Si using SiNx and AlGaN layers,” J. Phys. Conf. Ser. 209, 012017 (2010).
[Crossref]

Karakostas, Th.

G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas, and Ph. Komninou, “Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire,” Phys. Status Solidi., A Appl. Mater. Sci. 210(1), 199–203 (2013).
[Crossref]

Katayama, K.

Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Kehagias, Th.

G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas, and Ph. Komninou, “Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire,” Phys. Status Solidi., A Appl. Mater. Sci. 210(1), 199–203 (2013).
[Crossref]

Keller, B. P.

S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, and S. P. Den Baars, “Growth and characterization of bulk InGaN films and quantum wells,” Appl. Phys. Lett. 68(22), 3147–3149 (1996).
[Crossref]

Keller, S.

S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, and S. P. Den Baars, “Growth and characterization of bulk InGaN films and quantum wells,” Appl. Phys. Lett. 68(22), 3147–3149 (1996).
[Crossref]

Kilinç, N.

N. Taşaltın, S. Öztürk, N. Kılınç, H. Yüzer, and Z. Z. Öztürk, “Simple fabrication of hexagonally well-ordered AAO template on silicon substrate in two dimensions,” Appl. Phys., A Mater. Sci. Process. 95(3), 781–787 (2009).
[Crossref]

Koide, N.

N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi, “Growth and properties of semi-polar GaN on a patterned silicon substrate,” J. Cryst. Growth 311(10), 2867–2874 (2009).
[Crossref]

Komninou, Ph.

G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas, and Ph. Komninou, “Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire,” Phys. Status Solidi., A Appl. Mater. Sci. 210(1), 199–203 (2013).
[Crossref]

Krost, A.

C. Finger, T. Hempel, T. Christen, J. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate, Hums,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Ku, H. M.

H. M. Ku, C. Y. Huang, C. Z. Liao, and S. Chao, “Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array,” Jpn. J. Appl. Phys. 50(4S), 04DG07 (2011).
[Crossref]

Kuo, C. H.

J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
[Crossref]

Kuo, C. T.

Kuo, H. C.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Kuo, Y. K.

Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Kurimoto, E.

T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, “Optical bandgap energy of wurtzite InN,” Appl. Phys. Lett. 81(7), 1246–1248 (2002).
[Crossref]

Kyono, T.

Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Lai, C. C.

Lai, W. C.

J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
[Crossref]

Lalinský, T.

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
[Crossref]

Lau, K. M.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Le Boulbar, E. D.

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
[Crossref]

Leung, B.

S. W. Feng, P. H. Liao, B. Leung, J. Han, F. W. Yang, and H. C. Wang, “Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes,” J. Appl. Phys. 118(4), 043104 (2015).
[Crossref]

Li, Z. Y.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Liao, C. H.

Liao, C. Z.

H. H. Liu, H. Y. Lin, C. Z. Liao, and J. I. Chyi, “Growth and Characterization of Crack-Free Semi-Polar (1-101) GaN on 7°-off (001) Si Substrates by Metal-Organic Chemical Vapor Deposition,” ECS Journal of Solid State Science and Technology 2(8), N3001–N3005 (2013).
[Crossref]

H. M. Ku, C. Y. Huang, C. Z. Liao, and S. Chao, “Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array,” Jpn. J. Appl. Phys. 50(4S), 04DG07 (2011).
[Crossref]

Liao, P. H.

S. W. Feng, P. H. Liao, B. Leung, J. Han, F. W. Yang, and H. C. Wang, “Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes,” J. Appl. Phys. 118(4), 043104 (2015).
[Crossref]

Liliental-Weber, Z.

Z. Liliental-Weber, J. Jasinski, and D. N. Zakharov, “GaN grown in polar and non-polar directions,” Opto-Electron. Rev. 12(4), 339–346 (2004).

Lin, H. Y.

H. H. Liu, H. Y. Lin, C. Z. Liao, and J. I. Chyi, “Growth and Characterization of Crack-Free Semi-Polar (1-101) GaN on 7°-off (001) Si Substrates by Metal-Organic Chemical Vapor Deposition,” ECS Journal of Solid State Science and Technology 2(8), N3001–N3005 (2013).
[Crossref]

Lin, K. I.

M. C. Chen, Y. C. Cheng, C. Y. Huang, H. C. Wang, K. I. Lin, and Z. P. Yang, “The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs,” J. Lumin. 177, 59–64 (2016).
[Crossref]

Lin, Y. C.

J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
[Crossref]

Lin, Y. L.

Y. S. Chen, L. J. Yao, Y. L. Lin, L. Hung, C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, and C. C. Yang, “Transmission Electron Microscopy Study on Pre-strained InGaN/GaN Quantum Wells,” J. Cryst. Growth 297(1), 66–73 (2006).
[Crossref]

Liu, H. H.

H. H. Liu, H. Y. Lin, C. Z. Liao, and J. I. Chyi, “Growth and Characterization of Crack-Free Semi-Polar (1-101) GaN on 7°-off (001) Si Substrates by Metal-Organic Chemical Vapor Deposition,” ECS Journal of Solid State Science and Technology 2(8), N3001–N3005 (2013).
[Crossref]

Liu, S.

H. C. Wang, T. Malinauskas, K. Jarasiunas, S. W. Feng, C. C. Ting, and S. Liu, “Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate,” Thin Solid Films 518(24), 7291–7294 (2010).
[Crossref]

Lotsari, A.

G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas, and Ph. Komninou, “Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire,” Phys. Status Solidi., A Appl. Mater. Sci. 210(1), 199–203 (2013).
[Crossref]

Lu, T. C.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Lu, Y. C.

H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97(3), 033704 (2005).
[Crossref]

Ma, K. J.

H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97(3), 033704 (2005).
[Crossref]

Malinauskas, T.

H. C. Wang, X. Y. Yu, Y. L. Chueh, T. Malinauskas, K. Jarasiunas, and S. W. Feng, “Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample,” Opt. Express 19(20), 18893–18902 (2011).
[Crossref] [PubMed]

H. C. Wang, T. Malinauskas, K. Jarasiunas, S. W. Feng, C. C. Ting, and S. Liu, “Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate,” Thin Solid Films 518(24), 7291–7294 (2010).
[Crossref]

Masui, H.

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, and S. P. Den Baars, “Growth and characterization of bulk InGaN films and quantum wells,” Appl. Phys. Lett. 68(22), 3147–3149 (1996).
[Crossref]

Matsuoka, T.

T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, “Optical bandgap energy of wurtzite InN,” Appl. Phys. Lett. 81(7), 1246–1248 (2002).
[Crossref]

McAleese, C.

M. Haeberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111) Si using SiNx and AlGaN layers,” J. Phys. Conf. Ser. 209, 012017 (2010).
[Crossref]

Mishra, U. K.

S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, and S. P. Den Baars, “Growth and characterization of bulk InGaN films and quantum wells,” Appl. Phys. Lett. 68(22), 3147–3149 (1996).
[Crossref]

Mukai, T.

S. Nakamura, M. Senoh, and T. Mukai, “P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes,” Jpn. J. Appl. Phys. 32(2), L8–L11 (1993).
[Crossref]

Murase, T.

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, “Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semi-polar GaN,” Appl. Phys. Lett. 98(5), 051902 (2011).
[Crossref]

Muthu, S.

S. Muthu, F. J. P. Schuurmans, and M. D. Pashley, “Red, Green, and Blue LEDs for White Light Illumination,” IEEE J. Sel. Top. Quantum Electron. 8(2), 333–338 (2002).
[Crossref]

Nakamura, S.

H. Ohta, S. P. DenBaars, and S. Nakamura, “Future of group-III nitride semiconductor green laser diodes,” J. Opt. Soc. Am. 27(11), B45–B49 (2010).
[Crossref]

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (10 −1 −1) Bulk GaN Substrates,” Jpn. J. Appl. Phys. 46(7), L129–L131 (2007).
[Crossref]

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

S. Nakamura, M. Senoh, and T. Mukai, “P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes,” Jpn. J. Appl. Phys. 32(2), L8–L11 (1993).
[Crossref]

Nakamura, T.

Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Nakano, Y.

M. Sugiyama, T. Shioda, Y. Tomita, T. Yamamoto, Y. Ikuhara, and Y. Nakano, “Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth,” Mater. Trans. 50(5), 1085–1090 (2009).
[Crossref]

Nakao, M.

T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, “Optical bandgap energy of wurtzite InN,” Appl. Phys. Lett. 81(7), 1246–1248 (2002).
[Crossref]

Ohkawa, K.

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

Ohta, H.

H. Ohta, S. P. DenBaars, and S. Nakamura, “Future of group-III nitride semiconductor green laser diodes,” J. Opt. Soc. Am. 27(11), B45–B49 (2010).
[Crossref]

Okamoto, H.

T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, “Optical bandgap energy of wurtzite InN,” Appl. Phys. Lett. 81(7), 1246–1248 (2002).
[Crossref]

Öztürk, S.

N. Taşaltın, S. Öztürk, N. Kılınç, H. Yüzer, and Z. Z. Öztürk, “Simple fabrication of hexagonally well-ordered AAO template on silicon substrate in two dimensions,” Appl. Phys., A Mater. Sci. Process. 95(3), 781–787 (2009).
[Crossref]

Öztürk, Z. Z.

N. Taşaltın, S. Öztürk, N. Kılınç, H. Yüzer, and Z. Z. Öztürk, “Simple fabrication of hexagonally well-ordered AAO template on silicon substrate in two dimensions,” Appl. Phys., A Mater. Sci. Process. 95(3), 781–787 (2009).
[Crossref]

Pan, C. C.

H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97(3), 033704 (2005).
[Crossref]

Parkhomovsky, A.

R. Held, B. E. Ishaug, A. Parkhomovsky, A. M. Dabiran, and P. I. Cohen, “A rate equation model for the growth of GaN on GaN(0001) by molecular beam epitaxy,” J. Appl. Phys. 87(3), 1219–1226 (2000).
[Crossref]

Pashley, M. D.

S. Muthu, F. J. P. Schuurmans, and M. D. Pashley, “Red, Green, and Blue LEDs for White Light Illumination,” IEEE J. Sel. Top. Quantum Electron. 8(2), 333–338 (2002).
[Crossref]

Rufer, L.

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
[Crossref]

Sato, H.

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

Sawaki, N.

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, “Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semi-polar GaN,” Appl. Phys. Lett. 98(5), 051902 (2011).
[Crossref]

N. Sawaki and Y. Honda, “Semi-polar GaN LEDs on Si substrate,” Sci. China Technol. Sci. 54(1), 38–41 (2011).
[Crossref]

N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi, “Growth and properties of semi-polar GaN on a patterned silicon substrate,” J. Cryst. Growth 311(10), 2867–2874 (2009).
[Crossref]

Schuurmans, F. J. P.

S. Muthu, F. J. P. Schuurmans, and M. D. Pashley, “Red, Green, and Blue LEDs for White Light Illumination,” IEEE J. Sel. Top. Quantum Electron. 8(2), 333–338 (2002).
[Crossref]

Senoh, M.

S. Nakamura, M. Senoh, and T. Mukai, “P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes,” Jpn. J. Appl. Phys. 32(2), L8–L11 (1993).
[Crossref]

Sheu, J. K.

J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
[Crossref]

Shiao, W. Y.

Y. S. Chen, L. J. Yao, Y. L. Lin, L. Hung, C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, and C. C. Yang, “Transmission Electron Microscopy Study on Pre-strained InGaN/GaN Quantum Wells,” J. Cryst. Growth 297(1), 66–73 (2006).
[Crossref]

Shioda, T.

M. Sugiyama, T. Shioda, Y. Tomita, T. Yamamoto, Y. Ikuhara, and Y. Nakano, “Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth,” Mater. Trans. 50(5), 1085–1090 (2009).
[Crossref]

Son, J. S.

J. S. Son, Y. Honda, M. Yamaguchi, and H. Amano, “Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask,” Jpn. J. Appl. Phys. 53(5S1), 05FL01 (2014).
[Crossref]

Speck, J. S.

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (10 −1 −1) Bulk GaN Substrates,” Jpn. J. Appl. Phys. 46(7), L129–L131 (2007).
[Crossref]

Su, Y. K.

J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
[Crossref]

Sugiyama, M.

M. Sugiyama, T. Shioda, Y. Tomita, T. Yamamoto, Y. Ikuhara, and Y. Nakano, “Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth,” Mater. Trans. 50(5), 1085–1090 (2009).
[Crossref]

Sumitomo, T.

Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Tanaka, S.

N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi, “Growth and properties of semi-polar GaN on a patterned silicon substrate,” J. Cryst. Growth 311(10), 2867–2874 (2009).
[Crossref]

Tang, T. Y.

Y. S. Chen, L. J. Yao, Y. L. Lin, L. Hung, C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, and C. C. Yang, “Transmission Electron Microscopy Study on Pre-strained InGaN/GaN Quantum Wells,” J. Cryst. Growth 297(1), 66–73 (2006).
[Crossref]

Tanikawa, T.

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, “Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semi-polar GaN,” Appl. Phys. Lett. 98(5), 051902 (2011).
[Crossref]

Tasaltin, N.

N. Taşaltın, S. Öztürk, N. Kılınç, H. Yüzer, and Z. Z. Öztürk, “Simple fabrication of hexagonally well-ordered AAO template on silicon substrate in two dimensions,” Appl. Phys., A Mater. Sci. Process. 95(3), 781–787 (2009).
[Crossref]

Teng, C. C.

H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97(3), 033704 (2005).
[Crossref]

Ting, C. C.

H. C. Wang, T. Malinauskas, K. Jarasiunas, S. W. Feng, C. C. Ting, and S. Liu, “Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate,” Thin Solid Films 518(24), 7291–7294 (2010).
[Crossref]

Tokuyama, S.

Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Tomita, Y.

M. Sugiyama, T. Shioda, Y. Tomita, T. Yamamoto, Y. Ikuhara, and Y. Nakano, “Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth,” Mater. Trans. 50(5), 1085–1090 (2009).
[Crossref]

Tsai, J. M.

J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
[Crossref]

Tsai, M. C.

Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Tsai, W. F.

L. C. Chen and W. F. Tsai, “Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching,” Nanoscale Res. Lett. 8(1), 157 (2013).
[Crossref] [PubMed]

Tsiang, R. C. C.

Y. S. Chen, C. H. Liao, C. T. Kuo, R. C. C. Tsiang, and H. C. Wang, “Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD,” Nanoscale Res. Lett. 9(1), 334 (2014).
[Crossref] [PubMed]

Tu, L. W.

S. W. Feng, L. W. Tu, J. I. Chyi, and H. C. Wang, “Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions,” Thin Solid Films 517(2), 909–915 (2008).
[Crossref]

Tyagi, A.

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (10 −1 −1) Bulk GaN Substrates,” Jpn. J. Appl. Phys. 46(7), L129–L131 (2007).
[Crossref]

Ueno, M.

Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Vanko, G.

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
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Vittoz, S.

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
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Wang, H. C.

M. C. Chen, Y. C. Cheng, C. Y. Huang, H. C. Wang, K. I. Lin, and Z. P. Yang, “The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs,” J. Lumin. 177, 59–64 (2016).
[Crossref]

S. W. Feng, P. H. Liao, B. Leung, J. Han, F. W. Yang, and H. C. Wang, “Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes,” J. Appl. Phys. 118(4), 043104 (2015).
[Crossref]

Y. S. Chen, C. H. Liao, C. T. Kuo, R. C. C. Tsiang, and H. C. Wang, “Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD,” Nanoscale Res. Lett. 9(1), 334 (2014).
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L. Y. Chen, S. H. Chen, C. T. Kuo, and H. C. Wang, “Spectral design and evaluation of OLEDs as light sources,” Org. Electron. 15(10), 2194–2209 (2014).
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Y. S. Chen, C. H. Liao, Y. L. Chueh, C. C. Lai, L. Y. Chen, A. K. Chu, C. T. Kuo, and H. C. Wang, “High performance Cu2O/ZnO core-shell nanorod arrays synthesized using a nanoimprint GaN template by the hydrothermal growth technique,” Opt. Mater. Express 4(7), 1473–1486 (2014).
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Y. S. Chen, C. H. Liao, Y. L. Chueh, C. T. Kuo, and H. C. Wang, “Plan-View Transmission Electron Microscopy Study on Coalescence Overgrowth of GaN Nano-columns by MOCVD,” Opt. Mater. Express 3(9), 1459–1467 (2013).
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Y. S. Chen, C. H. Liao, Y. C. Cheng, C. T. Kuo, and H. C. Wang, “Nanostructure Study of the Coalescence Growth of GaN Columns with Molecular Beam Epitaxy,” Opt. Mater. Express 3(9), 1450–1458 (2013).
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H. C. Wang, X. Y. Yu, Y. L. Chueh, T. Malinauskas, K. Jarasiunas, and S. W. Feng, “Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample,” Opt. Express 19(20), 18893–18902 (2011).
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H. C. Wang, T. Malinauskas, K. Jarasiunas, S. W. Feng, C. C. Ting, and S. Liu, “Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate,” Thin Solid Films 518(24), 7291–7294 (2010).
[Crossref]

S. W. Feng, L. W. Tu, J. I. Chyi, and H. C. Wang, “Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions,” Thin Solid Films 517(2), 909–915 (2008).
[Crossref]

H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97(3), 033704 (2005).
[Crossref]

Wang, S. C.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Wang, Y. D.

Y. D. Wang, K. Y. Zang, and S. J. Chua, “Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures,” J. Appl. Phys. 100(5), 054306 (2006).
[Crossref]

Wu, L. W.

J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
[Crossref]

Wu, R. K.

J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
[Crossref]

Wu, Z. H.

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, “Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semi-polar GaN,” Appl. Phys. Lett. 98(5), 051902 (2011).
[Crossref]

Yamaguchi, M.

J. S. Son, Y. Honda, M. Yamaguchi, and H. Amano, “Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask,” Jpn. J. Appl. Phys. 53(5S1), 05FL01 (2014).
[Crossref]

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, “Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semi-polar GaN,” Appl. Phys. Lett. 98(5), 051902 (2011).
[Crossref]

N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi, “Growth and properties of semi-polar GaN on a patterned silicon substrate,” J. Cryst. Growth 311(10), 2867–2874 (2009).
[Crossref]

Yamamoto, T.

M. Sugiyama, T. Shioda, Y. Tomita, T. Yamamoto, Y. Ikuhara, and Y. Nakano, “Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth,” Mater. Trans. 50(5), 1085–1090 (2009).
[Crossref]

Yang, C. C.

Y. S. Chen, L. J. Yao, Y. L. Lin, L. Hung, C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, and C. C. Yang, “Transmission Electron Microscopy Study on Pre-strained InGaN/GaN Quantum Wells,” J. Cryst. Growth 297(1), 66–73 (2006).
[Crossref]

H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97(3), 033704 (2005).
[Crossref]

Yang, F. W.

S. W. Feng, P. H. Liao, B. Leung, J. Han, F. W. Yang, and H. C. Wang, “Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes,” J. Appl. Phys. 118(4), 043104 (2015).
[Crossref]

Yang, Z. P.

M. C. Chen, Y. C. Cheng, C. Y. Huang, H. C. Wang, K. I. Lin, and Z. P. Yang, “The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs,” J. Lumin. 177, 59–64 (2016).
[Crossref]

Yao, L. J.

Y. S. Chen, L. J. Yao, Y. L. Lin, L. Hung, C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, and C. C. Yang, “Transmission Electron Microscopy Study on Pre-strained InGaN/GaN Quantum Wells,” J. Cryst. Growth 297(1), 66–73 (2006).
[Crossref]

Yao, T.

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

Yen, H. H.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Yen, S. H.

Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Yoshizumi, Y.

Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Yu, P.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Yu, X. Y.

Yüzer, H.

N. Taşaltın, S. Öztürk, N. Kılınç, H. Yüzer, and Z. Z. Öztürk, “Simple fabrication of hexagonally well-ordered AAO template on silicon substrate in two dimensions,” Appl. Phys., A Mater. Sci. Process. 95(3), 781–787 (2009).
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Zakharov, D. N.

Z. Liliental-Weber, J. Jasinski, and D. N. Zakharov, “GaN grown in polar and non-polar directions,” Opto-Electron. Rev. 12(4), 339–346 (2004).

Zang, K. Y.

Y. D. Wang, K. Y. Zang, and S. J. Chua, “Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures,” J. Appl. Phys. 100(5), 054306 (2006).
[Crossref]

Zhong, H.

A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (10 −1 −1) Bulk GaN Substrates,” Jpn. J. Appl. Phys. 46(7), L129–L131 (2007).
[Crossref]

Zhu, D.

M. Haeberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111) Si using SiNx and AlGaN layers,” J. Phys. Conf. Ser. 209, 012017 (2010).
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Appl. Phys. Express (1)

Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates, Yohei Enya,” Appl. Phys. Express 2, 082101 (2009).
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Appl. Phys. Lett. (5)

S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, and S. P. Den Baars, “Growth and characterization of bulk InGaN films and quantum wells,” Appl. Phys. Lett. 68(22), 3147–3149 (1996).
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Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, “Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semi-polar GaN,” Appl. Phys. Lett. 98(5), 051902 (2011).
[Crossref]

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
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T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, “Optical bandgap energy of wurtzite InN,” Appl. Phys. Lett. 81(7), 1246–1248 (2002).
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Appl. Phys., A Mater. Sci. Process. (1)

N. Taşaltın, S. Öztürk, N. Kılınç, H. Yüzer, and Z. Z. Öztürk, “Simple fabrication of hexagonally well-ordered AAO template on silicon substrate in two dimensions,” Appl. Phys., A Mater. Sci. Process. 95(3), 781–787 (2009).
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ECS Journal of Solid State Science and Technology (1)

H. H. Liu, H. Y. Lin, C. Z. Liao, and J. I. Chyi, “Growth and Characterization of Crack-Free Semi-Polar (1-101) GaN on 7°-off (001) Si Substrates by Metal-Organic Chemical Vapor Deposition,” ECS Journal of Solid State Science and Technology 2(8), N3001–N3005 (2013).
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IEEE J. Sel. Top. Quantum Electron. (1)

S. Muthu, F. J. P. Schuurmans, and M. D. Pashley, “Red, Green, and Blue LEDs for White Light Illumination,” IEEE J. Sel. Top. Quantum Electron. 8(2), 333–338 (2002).
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IEEE Photonic. Tech. L. (1)

J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, “White-Light Emission From Near UV InGaN–GaN LED Chip Precoated With Blue/Green/Red Phosphors,” IEEE Photonic. Tech. L. 15(1), 18–20 (2003).
[Crossref]

J. Appl. Phys. (5)

Y. D. Wang, K. Y. Zang, and S. J. Chua, “Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures,” J. Appl. Phys. 100(5), 054306 (2006).
[Crossref]

S. W. Feng, P. H. Liao, B. Leung, J. Han, F. W. Yang, and H. C. Wang, “Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes,” J. Appl. Phys. 118(4), 043104 (2015).
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R. Held, B. E. Ishaug, A. Parkhomovsky, A. M. Dabiran, and P. I. Cohen, “A rate equation model for the growth of GaN on GaN(0001) by molecular beam epitaxy,” J. Appl. Phys. 87(3), 1219–1226 (2000).
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H. C. Wang, Y. C. Lu, C. C. Teng, Y. S. Chen, C. C. Yang, K. J. Ma, C. C. Pan, and J. I. Chyi, “Ultrafast Carrier Dynamics in an InGaN Thin Film,” J. Appl. Phys. 97(3), 033704 (2005).
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C. Finger, T. Hempel, T. Christen, J. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate, Hums,” J. Appl. Phys. 101(3), 033113 (2007).
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J. Cryst. Growth (2)

N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi, “Growth and properties of semi-polar GaN on a patterned silicon substrate,” J. Cryst. Growth 311(10), 2867–2874 (2009).
[Crossref]

Y. S. Chen, L. J. Yao, Y. L. Lin, L. Hung, C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, and C. C. Yang, “Transmission Electron Microscopy Study on Pre-strained InGaN/GaN Quantum Wells,” J. Cryst. Growth 297(1), 66–73 (2006).
[Crossref]

J. Lumin. (1)

M. C. Chen, Y. C. Cheng, C. Y. Huang, H. C. Wang, K. I. Lin, and Z. P. Yang, “The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs,” J. Lumin. 177, 59–64 (2016).
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J. Opt. Soc. Am. (1)

H. Ohta, S. P. DenBaars, and S. Nakamura, “Future of group-III nitride semiconductor green laser diodes,” J. Opt. Soc. Am. 27(11), B45–B49 (2010).
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J. Phys. Conf. Ser. (1)

M. Haeberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111) Si using SiNx and AlGaN layers,” J. Phys. Conf. Ser. 209, 012017 (2010).
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Jpn. J. Appl. Phys. (5)

H. M. Ku, C. Y. Huang, C. Z. Liao, and S. Chao, “Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array,” Jpn. J. Appl. Phys. 50(4S), 04DG07 (2011).
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S. Nakamura, M. Senoh, and T. Mukai, “P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes,” Jpn. J. Appl. Phys. 32(2), L8–L11 (1993).
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A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (10 −1 −1) Bulk GaN Substrates,” Jpn. J. Appl. Phys. 46(7), L129–L131 (2007).
[Crossref]

K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, and K. Ohkawa, “Photoelectrochemical Properties of Nonpolar and Semipolar GaN,” Jpn. J. Appl. Phys. 46(10A10R), 6573–6578 (2007).
[Crossref]

J. S. Son, Y. Honda, M. Yamaguchi, and H. Amano, “Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask,” Jpn. J. Appl. Phys. 53(5S1), 05FL01 (2014).
[Crossref]

Mater. Trans. (1)

M. Sugiyama, T. Shioda, Y. Tomita, T. Yamamoto, Y. Ikuhara, and Y. Nakano, “Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth,” Mater. Trans. 50(5), 1085–1090 (2009).
[Crossref]

Nanoscale Res. Lett. (2)

Y. S. Chen, C. H. Liao, C. T. Kuo, R. C. C. Tsiang, and H. C. Wang, “Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD,” Nanoscale Res. Lett. 9(1), 334 (2014).
[Crossref] [PubMed]

L. C. Chen and W. F. Tsai, “Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching,” Nanoscale Res. Lett. 8(1), 157 (2013).
[Crossref] [PubMed]

Opt. Express (1)

Opt. Mater. Express (3)

Opto-Electron. Rev. (1)

Z. Liliental-Weber, J. Jasinski, and D. N. Zakharov, “GaN grown in polar and non-polar directions,” Opto-Electron. Rev. 12(4), 339–346 (2004).

Org. Electron. (1)

L. Y. Chen, S. H. Chen, C. T. Kuo, and H. C. Wang, “Spectral design and evaluation of OLEDs as light sources,” Org. Electron. 15(10), 2194–2209 (2014).
[Crossref]

Phys. Status Solidi., A Appl. Mater. Sci. (1)

G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas, and Ph. Komninou, “Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire,” Phys. Status Solidi., A Appl. Mater. Sci. 210(1), 199–203 (2013).
[Crossref]

Phys. Status Solidi., C Curr. Top. Solid State Phys. (1)

M. J. Edwards, E. D. Le Boulbar, S. Vittoz, G. Vanko, K. Brinkfeldt, L. Rufer, P. Johander, T. Lalinský, C. R. Bowen, and D. W. E. Allsopp, “Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 9(3), 960–963 (2012).
[Crossref]

Sci. China Technol. Sci. (1)

N. Sawaki and Y. Honda, “Semi-polar GaN LEDs on Si substrate,” Sci. China Technol. Sci. 54(1), 38–41 (2011).
[Crossref]

Thin Solid Films (2)

H. C. Wang, T. Malinauskas, K. Jarasiunas, S. W. Feng, C. C. Ting, and S. Liu, “Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate,” Thin Solid Films 518(24), 7291–7294 (2010).
[Crossref]

S. W. Feng, L. W. Tu, J. I. Chyi, and H. C. Wang, “Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions,” Thin Solid Films 517(2), 909–915 (2008).
[Crossref]

Other (1)

Y. S. Chen, W. Y. Shiao, T. Y. Tang, W. M. Chang, C. H. Liao, C. H. Lin, K. C. Shen, C. C. Yang, M. C. Hsu, J. H. Yeh, and T. C. Hsu, “Threading Dislocation Evolution in Patterned GaN Nanocolumn Growth and Coalescence Overgrowth,” J. Appl. Phys. 106(2), 023512 (2009).
[Crossref]

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Figures (6)

Fig. 1
Fig. 1

Fabrication process of the s semi-polar faced InGaN/GaN double quantum wells nanorods samples.

Fig. 2
Fig. 2

PL results of the semi-polar-faced InGaN/GaN double quantum well nanorods. (a) Sample A (control group). (b) Sample B (750°C). (c) Sample C (700°C). (d) Sample D (600°C).

Fig. 3
Fig. 3

SEM images of the semi-polar-faced InGaN/GaN double quantum well nanorods. (a) Top view of sample A. (b) Cross-section view of sample A. (c) Top view of sample D. (d) Cross-section view of sample D.

Fig. 4
Fig. 4

TEM images of the semi-polar-faced InGaN/GaN double quantum well nanorods. (a) Sample A. (b) Sample B. (c) Sample C. (d) Sample D.

Fig. 5
Fig. 5

HRTEM images of the GaN and SiO2 layers of the produced GaN nanorods. (a) Close-up view of the atomic lattice image of the GaN nanorod base. (b) Zoomed-out view of the atomic lattice image of the GaN nanorod base.

Fig. 6
Fig. 6

HRTEM images of the semi-polar-faced InGaN/GaN double quantum well cap structure. (a) Structural atomic lattice image of sample D’s left-side cap. (b) Structural atomic lattice image of sample D’s right-side cap.

Equations (1)

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i d = 2n(λ) λ peak

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