Abstract

The linear and nonlinear optical properties of phosphorous-doped Si/SiO2 multilayers as a function of doping concentration were investigated. It was found that the linear optical absorption became weak with the doping concentrations while the corresponding nonlinear optical absorption coefficient was reduced by 4 folds after phosphorus doping. Our experimental results demonstrated that the interface states were passivated by the phosphorus dopants which changed the chemical environment of the Si nanoclusters and in turn affected both the linear and nonlinear optical processes. The excitation-wavelength dependent nonlinear optical behaviors also supported our proposed model. It was suggested that the linear and nonlinear optical properties can be tunable via controlling the phosphorous doping concentrations which provided a new approach to improve the performance of nano-Si-based photonic devices.

© 2017 Optical Society of America

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  1. A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
    [Crossref] [PubMed]
  2. L. Sirleto, M. A. Ferrara, T. Nikitin, S. Novikov, and L. Khriachtchev, “Giant Raman gain in silicon nanocrystals,” Nat. Commun. 3, 1220 (2012).
    [Crossref] [PubMed]
  3. J. Matres, C. Lacava, G. C. Ballesteros, P. Minzioni, I. Cristiani, J. M. Fédéli, J. Martí, and C. J. Oton, “Low TPA and free-carrier effects in silicon nanocrystal-based horizontal slot waveguides,” Opt. Express 20(21), 23838–23845 (2012).
    [Crossref] [PubMed]
  4. K. Imakita, M. Ito, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorous-doped Si nanocrystals embedded in phosphosilicate glass thin films,” Opt. Express 17(9), 7368–7376 (2009).
    [Crossref] [PubMed]
  5. M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorus-doped silicon nanocrystals/nanoclusters,” J. Phys. D Appl. Phys. 43(50), 505101 (2010).
    [Crossref]
  6. K. Ikeda, Y. Shen, and Y. Fainman, “Enhanced optical nonlinearity in amorphous silicon and its application to waveguide devices,” Opt. Express 15(26), 17761–17771 (2007).
    [Crossref] [PubMed]
  7. P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
    [Crossref]
  8. P. Zhang, X. Zhang, J. Xu, W. Mu, J. Xu, W. Li, and K. Chen, “Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excitation,” Nanoscale Res. Lett. 9(1), 28 (2014).
    [Crossref] [PubMed]
  9. W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).
  10. X. D. Pi, R. Gresback, R. W. Liptak, S. A. Campbell, and U. Kortshagen, “Doping efficiency, dopant location, and oxidation of Si nanocrystals,” Appl. Phys. Lett. 92(12), 123102 (2008).
    [Crossref]
  11. X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
    [Crossref]
  12. B. L. Oliva-Chatelain, T. M. Ticich, and A. R. Barron, “Doping silicon nanocrystals and quantum dots,” Nanoscale 8(4), 1733–1745 (2016).
    [Crossref] [PubMed]
  13. P. Lu, W. Mu, J. Xu, X. Zhang, W. Zhang, W. Li, L. Xu, and K. Chen, “Phosphorus doping in Si nanocrystals/SiO2 msultilayers and light emission with wavelength compatible for optical telecommunication,” Sci. Rep. 6, 22888 (2016).
    [Crossref] [PubMed]
  14. H. Sun, J. Xu, Y. Liu, W. Mu, W. Xu, W. Li, and K. Chen, “Subband Light Emission from phosphorous-doped amorphous Si/SiO2 multilayers at room temperature,” Chin. Phys. Lett. 28(6), 067802 (2011).
    [Crossref]
  15. P. Lu, D. Li, P. Zhang, D. Tan, W. Mu, J. Xu, W. Li, and K. Chen, “Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO2 multilayers with ultra-small dot sizes,” Opt. Mater. Express 6(10), 3233–3241 (2016).
    [Crossref]
  16. M. Sheik-Bahae, A. A. Said, T.-H. Wei, D. A. Hagan, and E. W. Van Stryland, “Sensitive measurements of optical nonlinearities using a single beam,” IEEE J. Quantum Electron. 26(4), 760–769 (1990).
    [Crossref]
  17. R. Spano, N. Daldosso, M. Cazzanelli, L. Ferraioli, L. Tartara, J. Yu, V. Degiorgio, E. Giordana, J. M. Fedeli, and L. Pavesi, “Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm,” Opt. Express 17(5), 3941–3950 (2009).
    [Crossref] [PubMed]
  18. C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
    [Crossref]
  19. S. Zhou, X. D. Pi, Z. Y. Ni, Q. B. Luan, Y. Y. Jiang, C. H. Jin, T. Nozaki, and D. Yang, “Boron- and phosphorus-hyperdoped silicon nanocrystals,” Part. Part. Syst. Charact. 32(2), 213–221 (2015).
    [Crossref]
  20. M. Perego, C. Bonafos, and M. Fanciulli, “Phosphorus doping of ultra-small silicon nanocrystals,” Nanotechnology 21(2), 025602 (2010).
    [Crossref] [PubMed]
  21. H. Sugimoto, M. Fujii, K. Imakita, S. Hayashi, and K. Akamatsu, “Phosphorus and boron codoped colloidal silicon nanocrystals with inorganic atomic ligands,” J. Phys. Chem. C 117(13), 6807–6813 (2013).
    [Crossref]
  22. H. Gnaser, S. Gutsch, M. Wahl, R. Schiller, M. Kopnarski, D. Hiller, and M. Zacharias, “Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography,” J. Appl. Phys. 115(3), 034304 (2014).
    [Crossref]
  23. G. Vijaya Prakash, M. C Azzanelli, Z Gaburro, L Pavesi, F Iacona, G Franzò, and F Priolo, “Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition,” J. Appl. Phys. 91(7), 4607–4610 (2002).
    [Crossref]
  24. S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
    [Crossref]
  25. Y. J. Ma, J. I. Oh, D. Q. Zheng, W. A. Su, and W. Z. Shen, “Tunable nonlinear absorption of hydrogenated nanocrystalline silicon,” Opt. Lett. 36(17), 3431–3433 (2011).
    [Crossref] [PubMed]
  26. S. Vijayalakshumi, H. Grebel, G. Yaglioglu, R. Pino, R. Dorsinville, and C. W. White, “Nonlinear optical response of Si nanostructures in a silica matrix,” J. Appl. Phys. 88(11), 6418–6422 (2000).
    [Crossref]
  27. M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of silicon nanoclusters/nanocrystals doped SiO2 films: Annealing temperature dependence,” J. Appl. Phys. 108(6), 063512 (2010).
    [Crossref]
  28. S. Dhara, K. Imakita, P. K. Giri, and M. Fujii, “Strain dependence of the nonlinear optical properties of strained Si nanoparticles,” Opt. Lett. 39(13), 3833–3836 (2014).
    [Crossref] [PubMed]
  29. S. Minissale, S. Yerci, and L. Nero, “Nonlinear optical properties of low temperature annealed silicon-rich oxide and silicon-rich nitride materials for silicon photonics,” Appl. Phys. Lett. 100(2), 021109 (2012).
    [Crossref]
  30. G. M. Dalpian and J. R. Chelikowsky, “Self-purification in semiconductor nanocrystals,” Phys. Rev. Lett. 96(22), 226802 (2006).
    [Crossref] [PubMed]
  31. Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
    [Crossref]
  32. J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
    [Crossref]

2016 (3)

B. L. Oliva-Chatelain, T. M. Ticich, and A. R. Barron, “Doping silicon nanocrystals and quantum dots,” Nanoscale 8(4), 1733–1745 (2016).
[Crossref] [PubMed]

P. Lu, W. Mu, J. Xu, X. Zhang, W. Zhang, W. Li, L. Xu, and K. Chen, “Phosphorus doping in Si nanocrystals/SiO2 msultilayers and light emission with wavelength compatible for optical telecommunication,” Sci. Rep. 6, 22888 (2016).
[Crossref] [PubMed]

P. Lu, D. Li, P. Zhang, D. Tan, W. Mu, J. Xu, W. Li, and K. Chen, “Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO2 multilayers with ultra-small dot sizes,” Opt. Mater. Express 6(10), 3233–3241 (2016).
[Crossref]

2015 (1)

S. Zhou, X. D. Pi, Z. Y. Ni, Q. B. Luan, Y. Y. Jiang, C. H. Jin, T. Nozaki, and D. Yang, “Boron- and phosphorus-hyperdoped silicon nanocrystals,” Part. Part. Syst. Charact. 32(2), 213–221 (2015).
[Crossref]

2014 (5)

H. Gnaser, S. Gutsch, M. Wahl, R. Schiller, M. Kopnarski, D. Hiller, and M. Zacharias, “Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography,” J. Appl. Phys. 115(3), 034304 (2014).
[Crossref]

S. Dhara, K. Imakita, P. K. Giri, and M. Fujii, “Strain dependence of the nonlinear optical properties of strained Si nanoparticles,” Opt. Lett. 39(13), 3833–3836 (2014).
[Crossref] [PubMed]

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

P. Zhang, X. Zhang, J. Xu, W. Mu, J. Xu, W. Li, and K. Chen, “Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excitation,” Nanoscale Res. Lett. 9(1), 28 (2014).
[Crossref] [PubMed]

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

2013 (1)

H. Sugimoto, M. Fujii, K. Imakita, S. Hayashi, and K. Akamatsu, “Phosphorus and boron codoped colloidal silicon nanocrystals with inorganic atomic ligands,” J. Phys. Chem. C 117(13), 6807–6813 (2013).
[Crossref]

2012 (3)

S. Minissale, S. Yerci, and L. Nero, “Nonlinear optical properties of low temperature annealed silicon-rich oxide and silicon-rich nitride materials for silicon photonics,” Appl. Phys. Lett. 100(2), 021109 (2012).
[Crossref]

L. Sirleto, M. A. Ferrara, T. Nikitin, S. Novikov, and L. Khriachtchev, “Giant Raman gain in silicon nanocrystals,” Nat. Commun. 3, 1220 (2012).
[Crossref] [PubMed]

J. Matres, C. Lacava, G. C. Ballesteros, P. Minzioni, I. Cristiani, J. M. Fédéli, J. Martí, and C. J. Oton, “Low TPA and free-carrier effects in silicon nanocrystal-based horizontal slot waveguides,” Opt. Express 20(21), 23838–23845 (2012).
[Crossref] [PubMed]

2011 (2)

H. Sun, J. Xu, Y. Liu, W. Mu, W. Xu, W. Li, and K. Chen, “Subband Light Emission from phosphorous-doped amorphous Si/SiO2 multilayers at room temperature,” Chin. Phys. Lett. 28(6), 067802 (2011).
[Crossref]

Y. J. Ma, J. I. Oh, D. Q. Zheng, W. A. Su, and W. Z. Shen, “Tunable nonlinear absorption of hydrogenated nanocrystalline silicon,” Opt. Lett. 36(17), 3431–3433 (2011).
[Crossref] [PubMed]

2010 (4)

M. Perego, C. Bonafos, and M. Fanciulli, “Phosphorus doping of ultra-small silicon nanocrystals,” Nanotechnology 21(2), 025602 (2010).
[Crossref] [PubMed]

M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of silicon nanoclusters/nanocrystals doped SiO2 films: Annealing temperature dependence,” J. Appl. Phys. 108(6), 063512 (2010).
[Crossref]

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorus-doped silicon nanocrystals/nanoclusters,” J. Phys. D Appl. Phys. 43(50), 505101 (2010).
[Crossref]

2009 (4)

K. Imakita, M. Ito, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorous-doped Si nanocrystals embedded in phosphosilicate glass thin films,” Opt. Express 17(9), 7368–7376 (2009).
[Crossref] [PubMed]

X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
[Crossref]

R. Spano, N. Daldosso, M. Cazzanelli, L. Ferraioli, L. Tartara, J. Yu, V. Degiorgio, E. Giordana, J. M. Fedeli, and L. Pavesi, “Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm,” Opt. Express 17(5), 3941–3950 (2009).
[Crossref] [PubMed]

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

2008 (2)

X. D. Pi, R. Gresback, R. W. Liptak, S. A. Campbell, and U. Kortshagen, “Doping efficiency, dopant location, and oxidation of Si nanocrystals,” Appl. Phys. Lett. 92(12), 123102 (2008).
[Crossref]

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

2007 (1)

2006 (1)

G. M. Dalpian and J. R. Chelikowsky, “Self-purification in semiconductor nanocrystals,” Phys. Rev. Lett. 96(22), 226802 (2006).
[Crossref] [PubMed]

2005 (1)

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

2004 (1)

J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
[Crossref]

2002 (1)

G. Vijaya Prakash, M. C Azzanelli, Z Gaburro, L Pavesi, F Iacona, G Franzò, and F Priolo, “Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition,” J. Appl. Phys. 91(7), 4607–4610 (2002).
[Crossref]

2000 (1)

S. Vijayalakshumi, H. Grebel, G. Yaglioglu, R. Pino, R. Dorsinville, and C. W. White, “Nonlinear optical response of Si nanostructures in a silica matrix,” J. Appl. Phys. 88(11), 6418–6422 (2000).
[Crossref]

1990 (1)

M. Sheik-Bahae, A. A. Said, T.-H. Wei, D. A. Hagan, and E. W. Van Stryland, “Sensitive measurements of optical nonlinearities using a single beam,” IEEE J. Quantum Electron. 26(4), 760–769 (1990).
[Crossref]

Akamatsu, K.

H. Sugimoto, M. Fujii, K. Imakita, S. Hayashi, and K. Akamatsu, “Phosphorus and boron codoped colloidal silicon nanocrystals with inorganic atomic ligands,” J. Phys. Chem. C 117(13), 6807–6813 (2013).
[Crossref]

Azzanelli, M. C

G. Vijaya Prakash, M. C Azzanelli, Z Gaburro, L Pavesi, F Iacona, G Franzò, and F Priolo, “Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition,” J. Appl. Phys. 91(7), 4607–4610 (2002).
[Crossref]

Ballesteros, G. C.

Barron, A. R.

B. L. Oliva-Chatelain, T. M. Ticich, and A. R. Barron, “Doping silicon nanocrystals and quantum dots,” Nanoscale 8(4), 1733–1745 (2016).
[Crossref] [PubMed]

Bellet, D.

X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
[Crossref]

Bellet-Amalric, E.

X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
[Crossref]

Blasco, J.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

Bonafos, C.

M. Perego, C. Bonafos, and M. Fanciulli, “Phosphorus doping of ultra-small silicon nanocrystals,” Nanotechnology 21(2), 025602 (2010).
[Crossref] [PubMed]

Campbell, S. A.

X. D. Pi, R. Gresback, R. W. Liptak, S. A. Campbell, and U. Kortshagen, “Doping efficiency, dopant location, and oxidation of Si nanocrystals,” Appl. Phys. Lett. 92(12), 123102 (2008).
[Crossref]

Cazzanelli, M.

R. Spano, N. Daldosso, M. Cazzanelli, L. Ferraioli, L. Tartara, J. Yu, V. Degiorgio, E. Giordana, J. M. Fedeli, and L. Pavesi, “Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm,” Opt. Express 17(5), 3941–3950 (2009).
[Crossref] [PubMed]

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

Cen, Z.

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

Chelikowsky, J. R.

G. M. Dalpian and J. R. Chelikowsky, “Self-purification in semiconductor nanocrystals,” Phys. Rev. Lett. 96(22), 226802 (2006).
[Crossref] [PubMed]

Chen, D.

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

Chen, G. R.

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

Chen, K.

P. Lu, W. Mu, J. Xu, X. Zhang, W. Zhang, W. Li, L. Xu, and K. Chen, “Phosphorus doping in Si nanocrystals/SiO2 msultilayers and light emission with wavelength compatible for optical telecommunication,” Sci. Rep. 6, 22888 (2016).
[Crossref] [PubMed]

P. Lu, D. Li, P. Zhang, D. Tan, W. Mu, J. Xu, W. Li, and K. Chen, “Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO2 multilayers with ultra-small dot sizes,” Opt. Mater. Express 6(10), 3233–3241 (2016).
[Crossref]

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

P. Zhang, X. Zhang, J. Xu, W. Mu, J. Xu, W. Li, and K. Chen, “Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excitation,” Nanoscale Res. Lett. 9(1), 28 (2014).
[Crossref] [PubMed]

H. Sun, J. Xu, Y. Liu, W. Mu, W. Xu, W. Li, and K. Chen, “Subband Light Emission from phosphorous-doped amorphous Si/SiO2 multilayers at room temperature,” Chin. Phys. Lett. 28(6), 067802 (2011).
[Crossref]

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
[Crossref]

Chen, K. J.

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

Cho, E.-C.

X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
[Crossref]

Conibeer, G.

X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
[Crossref]

Cristiani, I.

Daldosso, N.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

R. Spano, N. Daldosso, M. Cazzanelli, L. Ferraioli, L. Tartara, J. Yu, V. Degiorgio, E. Giordana, J. M. Fedeli, and L. Pavesi, “Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm,” Opt. Express 17(5), 3941–3950 (2009).
[Crossref] [PubMed]

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

Dalpian, G. M.

G. M. Dalpian and J. R. Chelikowsky, “Self-purification in semiconductor nanocrystals,” Phys. Rev. Lett. 96(22), 226802 (2006).
[Crossref] [PubMed]

Degiorgio, V.

Dhara, S.

Dorsinville, R.

S. Vijayalakshumi, H. Grebel, G. Yaglioglu, R. Pino, R. Dorsinville, and C. W. White, “Nonlinear optical response of Si nanostructures in a silica matrix,” J. Appl. Phys. 88(11), 6418–6422 (2000).
[Crossref]

Fainman, Y.

Fanciulli, M.

M. Perego, C. Bonafos, and M. Fanciulli, “Phosphorus doping of ultra-small silicon nanocrystals,” Nanotechnology 21(2), 025602 (2010).
[Crossref] [PubMed]

Fedeli, J. M.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

R. Spano, N. Daldosso, M. Cazzanelli, L. Ferraioli, L. Tartara, J. Yu, V. Degiorgio, E. Giordana, J. M. Fedeli, and L. Pavesi, “Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm,” Opt. Express 17(5), 3941–3950 (2009).
[Crossref] [PubMed]

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

Fédéli, J. M.

Ferraioli, L.

Ferrara, M. A.

L. Sirleto, M. A. Ferrara, T. Nikitin, S. Novikov, and L. Khriachtchev, “Giant Raman gain in silicon nanocrystals,” Nat. Commun. 3, 1220 (2012).
[Crossref] [PubMed]

Franzò, G

G. Vijaya Prakash, M. C Azzanelli, Z Gaburro, L Pavesi, F Iacona, G Franzò, and F Priolo, “Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition,” J. Appl. Phys. 91(7), 4607–4610 (2002).
[Crossref]

Fujii, M.

S. Dhara, K. Imakita, P. K. Giri, and M. Fujii, “Strain dependence of the nonlinear optical properties of strained Si nanoparticles,” Opt. Lett. 39(13), 3833–3836 (2014).
[Crossref] [PubMed]

H. Sugimoto, M. Fujii, K. Imakita, S. Hayashi, and K. Akamatsu, “Phosphorus and boron codoped colloidal silicon nanocrystals with inorganic atomic ligands,” J. Phys. Chem. C 117(13), 6807–6813 (2013).
[Crossref]

M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorus-doped silicon nanocrystals/nanoclusters,” J. Phys. D Appl. Phys. 43(50), 505101 (2010).
[Crossref]

M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of silicon nanoclusters/nanocrystals doped SiO2 films: Annealing temperature dependence,” J. Appl. Phys. 108(6), 063512 (2010).
[Crossref]

K. Imakita, M. Ito, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorous-doped Si nanocrystals embedded in phosphosilicate glass thin films,” Opt. Express 17(9), 7368–7376 (2009).
[Crossref] [PubMed]

Gaburro, Z

G. Vijaya Prakash, M. C Azzanelli, Z Gaburro, L Pavesi, F Iacona, G Franzò, and F Priolo, “Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition,” J. Appl. Phys. 91(7), 4607–4610 (2002).
[Crossref]

Galán, J. V.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

García-Rupérez, J.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

Garrido, B.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

Gautier, P.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

Giordana, E.

Giri, P. K.

Gnaser, H.

H. Gnaser, S. Gutsch, M. Wahl, R. Schiller, M. Kopnarski, D. Hiller, and M. Zacharias, “Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography,” J. Appl. Phys. 115(3), 034304 (2014).
[Crossref]

Grebel, H.

S. Vijayalakshumi, H. Grebel, G. Yaglioglu, R. Pino, R. Dorsinville, and C. W. White, “Nonlinear optical response of Si nanostructures in a silica matrix,” J. Appl. Phys. 88(11), 6418–6422 (2000).
[Crossref]

Green, M. A.

X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
[Crossref]

Gresback, R.

X. D. Pi, R. Gresback, R. W. Liptak, S. A. Campbell, and U. Kortshagen, “Doping efficiency, dopant location, and oxidation of Si nanocrystals,” Appl. Phys. Lett. 92(12), 123102 (2008).
[Crossref]

Guider, R.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

Gutsch, S.

H. Gnaser, S. Gutsch, M. Wahl, R. Schiller, M. Kopnarski, D. Hiller, and M. Zacharias, “Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography,” J. Appl. Phys. 115(3), 034304 (2014).
[Crossref]

Hagan, D. A.

M. Sheik-Bahae, A. A. Said, T.-H. Wei, D. A. Hagan, and E. W. Van Stryland, “Sensitive measurements of optical nonlinearities using a single beam,” IEEE J. Quantum Electron. 26(4), 760–769 (1990).
[Crossref]

Hao, X. J.

X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
[Crossref]

Hayashi, S.

H. Sugimoto, M. Fujii, K. Imakita, S. Hayashi, and K. Akamatsu, “Phosphorus and boron codoped colloidal silicon nanocrystals with inorganic atomic ligands,” J. Phys. Chem. C 117(13), 6807–6813 (2013).
[Crossref]

M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorus-doped silicon nanocrystals/nanoclusters,” J. Phys. D Appl. Phys. 43(50), 505101 (2010).
[Crossref]

M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of silicon nanoclusters/nanocrystals doped SiO2 films: Annealing temperature dependence,” J. Appl. Phys. 108(6), 063512 (2010).
[Crossref]

K. Imakita, M. Ito, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorous-doped Si nanocrystals embedded in phosphosilicate glass thin films,” Opt. Express 17(9), 7368–7376 (2009).
[Crossref] [PubMed]

Hernández, S.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

Hiller, D.

H. Gnaser, S. Gutsch, M. Wahl, R. Schiller, M. Kopnarski, D. Hiller, and M. Zacharias, “Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography,” J. Appl. Phys. 115(3), 034304 (2014).
[Crossref]

Huang, S.

X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
[Crossref]

Huang, X.

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
[Crossref]

Huang, X. F.

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

Huang, Y. D.

X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
[Crossref]

Iacona, F

G. Vijaya Prakash, M. C Azzanelli, Z Gaburro, L Pavesi, F Iacona, G Franzò, and F Priolo, “Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition,” J. Appl. Phys. 91(7), 4607–4610 (2002).
[Crossref]

Ikeda, K.

Imakita, K.

S. Dhara, K. Imakita, P. K. Giri, and M. Fujii, “Strain dependence of the nonlinear optical properties of strained Si nanoparticles,” Opt. Lett. 39(13), 3833–3836 (2014).
[Crossref] [PubMed]

H. Sugimoto, M. Fujii, K. Imakita, S. Hayashi, and K. Akamatsu, “Phosphorus and boron codoped colloidal silicon nanocrystals with inorganic atomic ligands,” J. Phys. Chem. C 117(13), 6807–6813 (2013).
[Crossref]

M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorus-doped silicon nanocrystals/nanoclusters,” J. Phys. D Appl. Phys. 43(50), 505101 (2010).
[Crossref]

M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of silicon nanoclusters/nanocrystals doped SiO2 films: Annealing temperature dependence,” J. Appl. Phys. 108(6), 063512 (2010).
[Crossref]

K. Imakita, M. Ito, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorous-doped Si nanocrystals embedded in phosphosilicate glass thin films,” Opt. Express 17(9), 7368–7376 (2009).
[Crossref] [PubMed]

Ito, M.

M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of silicon nanoclusters/nanocrystals doped SiO2 films: Annealing temperature dependence,” J. Appl. Phys. 108(6), 063512 (2010).
[Crossref]

M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorus-doped silicon nanocrystals/nanoclusters,” J. Phys. D Appl. Phys. 43(50), 505101 (2010).
[Crossref]

K. Imakita, M. Ito, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorous-doped Si nanocrystals embedded in phosphosilicate glass thin films,” Opt. Express 17(9), 7368–7376 (2009).
[Crossref] [PubMed]

Jiang, Y. Y.

S. Zhou, X. D. Pi, Z. Y. Ni, Q. B. Luan, Y. Y. Jiang, C. H. Jin, T. Nozaki, and D. Yang, “Boron- and phosphorus-hyperdoped silicon nanocrystals,” Part. Part. Syst. Charact. 32(2), 213–221 (2015).
[Crossref]

Jin, C. H.

S. Zhou, X. D. Pi, Z. Y. Ni, Q. B. Luan, Y. Y. Jiang, C. H. Jin, T. Nozaki, and D. Yang, “Boron- and phosphorus-hyperdoped silicon nanocrystals,” Part. Part. Syst. Charact. 32(2), 213–221 (2015).
[Crossref]

Jordana, E.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

Khriachtchev, L.

L. Sirleto, M. A. Ferrara, T. Nikitin, S. Novikov, and L. Khriachtchev, “Giant Raman gain in silicon nanocrystals,” Nat. Commun. 3, 1220 (2012).
[Crossref] [PubMed]

Kopnarski, M.

H. Gnaser, S. Gutsch, M. Wahl, R. Schiller, M. Kopnarski, D. Hiller, and M. Zacharias, “Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography,” J. Appl. Phys. 115(3), 034304 (2014).
[Crossref]

Kortshagen, U.

X. D. Pi, R. Gresback, R. W. Liptak, S. A. Campbell, and U. Kortshagen, “Doping efficiency, dopant location, and oxidation of Si nanocrystals,” Appl. Phys. Lett. 92(12), 123102 (2008).
[Crossref]

Lacava, C.

Lebour, Y.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

Li, D.

Li, W.

P. Lu, D. Li, P. Zhang, D. Tan, W. Mu, J. Xu, W. Li, and K. Chen, “Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO2 multilayers with ultra-small dot sizes,” Opt. Mater. Express 6(10), 3233–3241 (2016).
[Crossref]

P. Lu, W. Mu, J. Xu, X. Zhang, W. Zhang, W. Li, L. Xu, and K. Chen, “Phosphorus doping in Si nanocrystals/SiO2 msultilayers and light emission with wavelength compatible for optical telecommunication,” Sci. Rep. 6, 22888 (2016).
[Crossref] [PubMed]

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

P. Zhang, X. Zhang, J. Xu, W. Mu, J. Xu, W. Li, and K. Chen, “Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excitation,” Nanoscale Res. Lett. 9(1), 28 (2014).
[Crossref] [PubMed]

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

H. Sun, J. Xu, Y. Liu, W. Mu, W. Xu, W. Li, and K. Chen, “Subband Light Emission from phosphorous-doped amorphous Si/SiO2 multilayers at room temperature,” Chin. Phys. Lett. 28(6), 067802 (2011).
[Crossref]

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
[Crossref]

Li, X.

J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
[Crossref]

Liptak, R. W.

X. D. Pi, R. Gresback, R. W. Liptak, S. A. Campbell, and U. Kortshagen, “Doping efficiency, dopant location, and oxidation of Si nanocrystals,” Appl. Phys. Lett. 92(12), 123102 (2008).
[Crossref]

Liu, Y.

H. Sun, J. Xu, Y. Liu, W. Mu, W. Xu, W. Li, and K. Chen, “Subband Light Emission from phosphorous-doped amorphous Si/SiO2 multilayers at room temperature,” Chin. Phys. Lett. 28(6), 067802 (2011).
[Crossref]

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

Lu, P.

P. Lu, W. Mu, J. Xu, X. Zhang, W. Zhang, W. Li, L. Xu, and K. Chen, “Phosphorus doping in Si nanocrystals/SiO2 msultilayers and light emission with wavelength compatible for optical telecommunication,” Sci. Rep. 6, 22888 (2016).
[Crossref] [PubMed]

P. Lu, D. Li, P. Zhang, D. Tan, W. Mu, J. Xu, W. Li, and K. Chen, “Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO2 multilayers with ultra-small dot sizes,” Opt. Mater. Express 6(10), 3233–3241 (2016).
[Crossref]

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

Luan, Q. B.

S. Zhou, X. D. Pi, Z. Y. Ni, Q. B. Luan, Y. Y. Jiang, C. H. Jin, T. Nozaki, and D. Yang, “Boron- and phosphorus-hyperdoped silicon nanocrystals,” Part. Part. Syst. Charact. 32(2), 213–221 (2015).
[Crossref]

Ma, Y. J.

Ma, Z.

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
[Crossref]

Ma, Z. Y.

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

Martí, J.

J. Matres, C. Lacava, G. C. Ballesteros, P. Minzioni, I. Cristiani, J. M. Fédéli, J. Martí, and C. J. Oton, “Low TPA and free-carrier effects in silicon nanocrystal-based horizontal slot waveguides,” Opt. Express 20(21), 23838–23845 (2012).
[Crossref] [PubMed]

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

Martínez, A.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

Matres, J.

Mei, J.

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
[Crossref]

Minissale, S.

S. Minissale, S. Yerci, and L. Nero, “Nonlinear optical properties of low temperature annealed silicon-rich oxide and silicon-rich nitride materials for silicon photonics,” Appl. Phys. Lett. 100(2), 021109 (2012).
[Crossref]

Minzioni, P.

Mu, W.

P. Lu, D. Li, P. Zhang, D. Tan, W. Mu, J. Xu, W. Li, and K. Chen, “Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO2 multilayers with ultra-small dot sizes,” Opt. Mater. Express 6(10), 3233–3241 (2016).
[Crossref]

P. Lu, W. Mu, J. Xu, X. Zhang, W. Zhang, W. Li, L. Xu, and K. Chen, “Phosphorus doping in Si nanocrystals/SiO2 msultilayers and light emission with wavelength compatible for optical telecommunication,” Sci. Rep. 6, 22888 (2016).
[Crossref] [PubMed]

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

P. Zhang, X. Zhang, J. Xu, W. Mu, J. Xu, W. Li, and K. Chen, “Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excitation,” Nanoscale Res. Lett. 9(1), 28 (2014).
[Crossref] [PubMed]

H. Sun, J. Xu, Y. Liu, W. Mu, W. Xu, W. Li, and K. Chen, “Subband Light Emission from phosphorous-doped amorphous Si/SiO2 multilayers at room temperature,” Chin. Phys. Lett. 28(6), 067802 (2011).
[Crossref]

Nero, L.

S. Minissale, S. Yerci, and L. Nero, “Nonlinear optical properties of low temperature annealed silicon-rich oxide and silicon-rich nitride materials for silicon photonics,” Appl. Phys. Lett. 100(2), 021109 (2012).
[Crossref]

Ni, Z. Y.

S. Zhou, X. D. Pi, Z. Y. Ni, Q. B. Luan, Y. Y. Jiang, C. H. Jin, T. Nozaki, and D. Yang, “Boron- and phosphorus-hyperdoped silicon nanocrystals,” Part. Part. Syst. Charact. 32(2), 213–221 (2015).
[Crossref]

Nikitin, T.

L. Sirleto, M. A. Ferrara, T. Nikitin, S. Novikov, and L. Khriachtchev, “Giant Raman gain in silicon nanocrystals,” Nat. Commun. 3, 1220 (2012).
[Crossref] [PubMed]

Novikov, S.

L. Sirleto, M. A. Ferrara, T. Nikitin, S. Novikov, and L. Khriachtchev, “Giant Raman gain in silicon nanocrystals,” Nat. Commun. 3, 1220 (2012).
[Crossref] [PubMed]

Nozaki, T.

S. Zhou, X. D. Pi, Z. Y. Ni, Q. B. Luan, Y. Y. Jiang, C. H. Jin, T. Nozaki, and D. Yang, “Boron- and phosphorus-hyperdoped silicon nanocrystals,” Part. Part. Syst. Charact. 32(2), 213–221 (2015).
[Crossref]

Oh, J. I.

Oliva-Chatelain, B. L.

B. L. Oliva-Chatelain, T. M. Ticich, and A. R. Barron, “Doping silicon nanocrystals and quantum dots,” Nanoscale 8(4), 1733–1745 (2016).
[Crossref] [PubMed]

Oton, C. J.

Pavesi, L

G. Vijaya Prakash, M. C Azzanelli, Z Gaburro, L Pavesi, F Iacona, G Franzò, and F Priolo, “Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition,” J. Appl. Phys. 91(7), 4607–4610 (2002).
[Crossref]

Pavesi, L.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

R. Spano, N. Daldosso, M. Cazzanelli, L. Ferraioli, L. Tartara, J. Yu, V. Degiorgio, E. Giordana, J. M. Fedeli, and L. Pavesi, “Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm,” Opt. Express 17(5), 3941–3950 (2009).
[Crossref] [PubMed]

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

Pellegrino, P.

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

Perego, M.

M. Perego, C. Bonafos, and M. Fanciulli, “Phosphorus doping of ultra-small silicon nanocrystals,” Nanotechnology 21(2), 025602 (2010).
[Crossref] [PubMed]

Pi, X. D.

S. Zhou, X. D. Pi, Z. Y. Ni, Q. B. Luan, Y. Y. Jiang, C. H. Jin, T. Nozaki, and D. Yang, “Boron- and phosphorus-hyperdoped silicon nanocrystals,” Part. Part. Syst. Charact. 32(2), 213–221 (2015).
[Crossref]

X. D. Pi, R. Gresback, R. W. Liptak, S. A. Campbell, and U. Kortshagen, “Doping efficiency, dopant location, and oxidation of Si nanocrystals,” Appl. Phys. Lett. 92(12), 123102 (2008).
[Crossref]

Pino, R.

S. Vijayalakshumi, H. Grebel, G. Yaglioglu, R. Pino, R. Dorsinville, and C. W. White, “Nonlinear optical response of Si nanostructures in a silica matrix,” J. Appl. Phys. 88(11), 6418–6422 (2000).
[Crossref]

Priolo, F

G. Vijaya Prakash, M. C Azzanelli, Z Gaburro, L Pavesi, F Iacona, G Franzò, and F Priolo, “Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition,” J. Appl. Phys. 91(7), 4607–4610 (2002).
[Crossref]

Rui, Y.

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
[Crossref]

Said, A. A.

M. Sheik-Bahae, A. A. Said, T.-H. Wei, D. A. Hagan, and E. W. Van Stryland, “Sensitive measurements of optical nonlinearities using a single beam,” IEEE J. Quantum Electron. 26(4), 760–769 (1990).
[Crossref]

Sanchis, P.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

Scardera, G.

X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
[Crossref]

Schiller, R.

H. Gnaser, S. Gutsch, M. Wahl, R. Schiller, M. Kopnarski, D. Hiller, and M. Zacharias, “Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography,” J. Appl. Phys. 115(3), 034304 (2014).
[Crossref]

Sheik-Bahae, M.

M. Sheik-Bahae, A. A. Said, T.-H. Wei, D. A. Hagan, and E. W. Van Stryland, “Sensitive measurements of optical nonlinearities using a single beam,” IEEE J. Quantum Electron. 26(4), 760–769 (1990).
[Crossref]

Shen, W. Z.

Shen, Y.

Shen, Y. S.

X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
[Crossref]

Sirleto, L.

L. Sirleto, M. A. Ferrara, T. Nikitin, S. Novikov, and L. Khriachtchev, “Giant Raman gain in silicon nanocrystals,” Nat. Commun. 3, 1220 (2012).
[Crossref] [PubMed]

Song, C.

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

Spano, R.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

R. Spano, N. Daldosso, M. Cazzanelli, L. Ferraioli, L. Tartara, J. Yu, V. Degiorgio, E. Giordana, J. M. Fedeli, and L. Pavesi, “Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm,” Opt. Express 17(5), 3941–3950 (2009).
[Crossref] [PubMed]

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

Su, W. A.

Sugimoto, H.

H. Sugimoto, M. Fujii, K. Imakita, S. Hayashi, and K. Akamatsu, “Phosphorus and boron codoped colloidal silicon nanocrystals with inorganic atomic ligands,” J. Phys. Chem. C 117(13), 6807–6813 (2013).
[Crossref]

Sun, H.

H. Sun, J. Xu, Y. Liu, W. Mu, W. Xu, W. Li, and K. Chen, “Subband Light Emission from phosphorous-doped amorphous Si/SiO2 multilayers at room temperature,” Chin. Phys. Lett. 28(6), 067802 (2011).
[Crossref]

Sun, H. C.

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

Sun, S.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

Tan, D.

Tartara, L.

Ticich, T. M.

B. L. Oliva-Chatelain, T. M. Ticich, and A. R. Barron, “Doping silicon nanocrystals and quantum dots,” Nanoscale 8(4), 1733–1745 (2016).
[Crossref] [PubMed]

Van Stryland, E. W.

M. Sheik-Bahae, A. A. Said, T.-H. Wei, D. A. Hagan, and E. W. Van Stryland, “Sensitive measurements of optical nonlinearities using a single beam,” IEEE J. Quantum Electron. 26(4), 760–769 (1990).
[Crossref]

Vijaya Prakash, G.

G. Vijaya Prakash, M. C Azzanelli, Z Gaburro, L Pavesi, F Iacona, G Franzò, and F Priolo, “Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition,” J. Appl. Phys. 91(7), 4607–4610 (2002).
[Crossref]

Vijayalakshumi, S.

S. Vijayalakshumi, H. Grebel, G. Yaglioglu, R. Pino, R. Dorsinville, and C. W. White, “Nonlinear optical response of Si nanostructures in a silica matrix,” J. Appl. Phys. 88(11), 6418–6422 (2000).
[Crossref]

Wahl, M.

H. Gnaser, S. Gutsch, M. Wahl, R. Schiller, M. Kopnarski, D. Hiller, and M. Zacharias, “Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography,” J. Appl. Phys. 115(3), 034304 (2014).
[Crossref]

Wang, T.

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

Wei, T.-H.

M. Sheik-Bahae, A. A. Said, T.-H. Wei, D. A. Hagan, and E. W. Van Stryland, “Sensitive measurements of optical nonlinearities using a single beam,” IEEE J. Quantum Electron. 26(4), 760–769 (1990).
[Crossref]

White, C. W.

S. Vijayalakshumi, H. Grebel, G. Yaglioglu, R. Pino, R. Dorsinville, and C. W. White, “Nonlinear optical response of Si nanostructures in a silica matrix,” J. Appl. Phys. 88(11), 6418–6422 (2000).
[Crossref]

Xu, J.

P. Lu, D. Li, P. Zhang, D. Tan, W. Mu, J. Xu, W. Li, and K. Chen, “Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO2 multilayers with ultra-small dot sizes,” Opt. Mater. Express 6(10), 3233–3241 (2016).
[Crossref]

P. Lu, W. Mu, J. Xu, X. Zhang, W. Zhang, W. Li, L. Xu, and K. Chen, “Phosphorus doping in Si nanocrystals/SiO2 msultilayers and light emission with wavelength compatible for optical telecommunication,” Sci. Rep. 6, 22888 (2016).
[Crossref] [PubMed]

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

P. Zhang, X. Zhang, J. Xu, W. Mu, J. Xu, W. Li, and K. Chen, “Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excitation,” Nanoscale Res. Lett. 9(1), 28 (2014).
[Crossref] [PubMed]

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

P. Zhang, X. Zhang, J. Xu, W. Mu, J. Xu, W. Li, and K. Chen, “Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excitation,” Nanoscale Res. Lett. 9(1), 28 (2014).
[Crossref] [PubMed]

H. Sun, J. Xu, Y. Liu, W. Mu, W. Xu, W. Li, and K. Chen, “Subband Light Emission from phosphorous-doped amorphous Si/SiO2 multilayers at room temperature,” Chin. Phys. Lett. 28(6), 067802 (2011).
[Crossref]

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
[Crossref]

Xu, L.

P. Lu, W. Mu, J. Xu, X. Zhang, W. Zhang, W. Li, L. Xu, and K. Chen, “Phosphorus doping in Si nanocrystals/SiO2 msultilayers and light emission with wavelength compatible for optical telecommunication,” Sci. Rep. 6, 22888 (2016).
[Crossref] [PubMed]

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

Xu, W.

H. Sun, J. Xu, Y. Liu, W. Mu, W. Xu, W. Li, and K. Chen, “Subband Light Emission from phosphorous-doped amorphous Si/SiO2 multilayers at room temperature,” Chin. Phys. Lett. 28(6), 067802 (2011).
[Crossref]

Xu, X.

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

Yaglioglu, G.

S. Vijayalakshumi, H. Grebel, G. Yaglioglu, R. Pino, R. Dorsinville, and C. W. White, “Nonlinear optical response of Si nanostructures in a silica matrix,” J. Appl. Phys. 88(11), 6418–6422 (2000).
[Crossref]

Yang, D.

S. Zhou, X. D. Pi, Z. Y. Ni, Q. B. Luan, Y. Y. Jiang, C. H. Jin, T. Nozaki, and D. Yang, “Boron- and phosphorus-hyperdoped silicon nanocrystals,” Part. Part. Syst. Charact. 32(2), 213–221 (2015).
[Crossref]

Yang, L.

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
[Crossref]

Yerci, S.

S. Minissale, S. Yerci, and L. Nero, “Nonlinear optical properties of low temperature annealed silicon-rich oxide and silicon-rich nitride materials for silicon photonics,” Appl. Phys. Lett. 100(2), 021109 (2012).
[Crossref]

Yu, J.

Zacharias, M.

H. Gnaser, S. Gutsch, M. Wahl, R. Schiller, M. Kopnarski, D. Hiller, and M. Zacharias, “Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography,” J. Appl. Phys. 115(3), 034304 (2014).
[Crossref]

Zhang, P.

P. Lu, D. Li, P. Zhang, D. Tan, W. Mu, J. Xu, W. Li, and K. Chen, “Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO2 multilayers with ultra-small dot sizes,” Opt. Mater. Express 6(10), 3233–3241 (2016).
[Crossref]

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

P. Zhang, X. Zhang, J. Xu, W. Mu, J. Xu, W. Li, and K. Chen, “Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excitation,” Nanoscale Res. Lett. 9(1), 28 (2014).
[Crossref] [PubMed]

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

Zhang, W.

P. Lu, W. Mu, J. Xu, X. Zhang, W. Zhang, W. Li, L. Xu, and K. Chen, “Phosphorus doping in Si nanocrystals/SiO2 msultilayers and light emission with wavelength compatible for optical telecommunication,” Sci. Rep. 6, 22888 (2016).
[Crossref] [PubMed]

Zhang, X.

P. Lu, W. Mu, J. Xu, X. Zhang, W. Zhang, W. Li, L. Xu, and K. Chen, “Phosphorus doping in Si nanocrystals/SiO2 msultilayers and light emission with wavelength compatible for optical telecommunication,” Sci. Rep. 6, 22888 (2016).
[Crossref] [PubMed]

P. Zhang, X. Zhang, J. Xu, W. Mu, J. Xu, W. Li, and K. Chen, “Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excitation,” Nanoscale Res. Lett. 9(1), 28 (2014).
[Crossref] [PubMed]

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

Zhang, Y.

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

Zheng, D. Q.

Zhou, S.

S. Zhou, X. D. Pi, Z. Y. Ni, Q. B. Luan, Y. Y. Jiang, C. H. Jin, T. Nozaki, and D. Yang, “Boron- and phosphorus-hyperdoped silicon nanocrystals,” Part. Part. Syst. Charact. 32(2), 213–221 (2015).
[Crossref]

Zhu, D.

J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
[Crossref]

Appl. Phys. Lett. (2)

X. D. Pi, R. Gresback, R. W. Liptak, S. A. Campbell, and U. Kortshagen, “Doping efficiency, dopant location, and oxidation of Si nanocrystals,” Appl. Phys. Lett. 92(12), 123102 (2008).
[Crossref]

S. Minissale, S. Yerci, and L. Nero, “Nonlinear optical properties of low temperature annealed silicon-rich oxide and silicon-rich nitride materials for silicon photonics,” Appl. Phys. Lett. 100(2), 021109 (2012).
[Crossref]

Appl. Surf. Sci. (1)

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

Chin. Phys. Lett. (1)

H. Sun, J. Xu, Y. Liu, W. Mu, W. Xu, W. Li, and K. Chen, “Subband Light Emission from phosphorous-doped amorphous Si/SiO2 multilayers at room temperature,” Chin. Phys. Lett. 28(6), 067802 (2011).
[Crossref]

IEEE J. Quantum Electron. (1)

M. Sheik-Bahae, A. A. Said, T.-H. Wei, D. A. Hagan, and E. W. Van Stryland, “Sensitive measurements of optical nonlinearities using a single beam,” IEEE J. Quantum Electron. 26(4), 760–769 (1990).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

J. Appl. Phys. (7)

C. Song, G. R. Chen, J. Xu, T. Wang, H. C. Sun, Y. Liu, W. Li, Z. Y. Ma, L. Xu, X. F. Huang, and K. J. Chen, “Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films,” J. Appl. Phys. 105(5), 054901 (2009).
[Crossref]

H. Gnaser, S. Gutsch, M. Wahl, R. Schiller, M. Kopnarski, D. Hiller, and M. Zacharias, “Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography,” J. Appl. Phys. 115(3), 034304 (2014).
[Crossref]

G. Vijaya Prakash, M. C Azzanelli, Z Gaburro, L Pavesi, F Iacona, G Franzò, and F Priolo, “Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition,” J. Appl. Phys. 91(7), 4607–4610 (2002).
[Crossref]

S. Hernández, P. Pellegrino, A. Martínez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, and J. M. Fedeli, “Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by PECVD,” J. Appl. Phys. 103(6), 064309 (2008).
[Crossref]

S. Vijayalakshumi, H. Grebel, G. Yaglioglu, R. Pino, R. Dorsinville, and C. W. White, “Nonlinear optical response of Si nanostructures in a silica matrix,” J. Appl. Phys. 88(11), 6418–6422 (2000).
[Crossref]

M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of silicon nanoclusters/nanocrystals doped SiO2 films: Annealing temperature dependence,” J. Appl. Phys. 108(6), 063512 (2010).
[Crossref]

Y. Rui, D. Chen, J. Xu, Y. Zhang, L. Yang, J. Mei, Z. Ma, Z. Cen, W. Li, L. Xu, X. Huang, and K. Chen, “Hydrogen-induced recovery of photoluminescence from annealed a-Si:H/a-SiO2 multilayers,” J. Appl. Phys. 98(3), 033532 (2005).
[Crossref]

J. Phys. Chem. C (1)

H. Sugimoto, M. Fujii, K. Imakita, S. Hayashi, and K. Akamatsu, “Phosphorus and boron codoped colloidal silicon nanocrystals with inorganic atomic ligands,” J. Phys. Chem. C 117(13), 6807–6813 (2013).
[Crossref]

J. Phys. D Appl. Phys. (1)

M. Ito, K. Imakita, M. Fujii, and S. Hayashi, “Nonlinear optical properties of phosphorus-doped silicon nanocrystals/nanoclusters,” J. Phys. D Appl. Phys. 43(50), 505101 (2010).
[Crossref]

Nano Lett. (1)

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[Crossref] [PubMed]

Nanoscale (1)

B. L. Oliva-Chatelain, T. M. Ticich, and A. R. Barron, “Doping silicon nanocrystals and quantum dots,” Nanoscale 8(4), 1733–1745 (2016).
[Crossref] [PubMed]

Nanoscale Res. Lett. (1)

P. Zhang, X. Zhang, J. Xu, W. Mu, J. Xu, W. Li, and K. Chen, “Tunable nonlinear optical properties in nanocrystalline Si/SiO2 multilayers under femtosecond excitation,” Nanoscale Res. Lett. 9(1), 28 (2014).
[Crossref] [PubMed]

Nanotechnology (1)

M. Perego, C. Bonafos, and M. Fanciulli, “Phosphorus doping of ultra-small silicon nanocrystals,” Nanotechnology 21(2), 025602 (2010).
[Crossref] [PubMed]

Nat. Commun. (1)

L. Sirleto, M. A. Ferrara, T. Nikitin, S. Novikov, and L. Khriachtchev, “Giant Raman gain in silicon nanocrystals,” Nat. Commun. 3, 1220 (2012).
[Crossref] [PubMed]

Opt. Express (4)

Opt. Lett. (2)

Opt. Mater. Express (1)

Part. Part. Syst. Charact. (1)

S. Zhou, X. D. Pi, Z. Y. Ni, Q. B. Luan, Y. Y. Jiang, C. H. Jin, T. Nozaki, and D. Yang, “Boron- and phosphorus-hyperdoped silicon nanocrystals,” Part. Part. Syst. Charact. 32(2), 213–221 (2015).
[Crossref]

Phys. Rev. Lett. (1)

G. M. Dalpian and J. R. Chelikowsky, “Self-purification in semiconductor nanocrystals,” Phys. Rev. Lett. 96(22), 226802 (2006).
[Crossref] [PubMed]

Sci. Rep. (1)

P. Lu, W. Mu, J. Xu, X. Zhang, W. Zhang, W. Li, L. Xu, and K. Chen, “Phosphorus doping in Si nanocrystals/SiO2 msultilayers and light emission with wavelength compatible for optical telecommunication,” Sci. Rep. 6, 22888 (2016).
[Crossref] [PubMed]

Solid State Commun. (1)

J. Mei, Y. Rui, Z. Ma, J. Xu, D. Zhu, L. Yang, X. Li, W. Li, X. Huang, and K. Chen, “Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing,” Solid State Commun. 131(11), 701–705 (2004).
[Crossref]

Thin Solid Films (1)

X. J. Hao, E.-C. Cho, G. Scardera, E. Bellet-Amalric, D. Bellet, Y. S. Shen, S. Huang, Y. D. Huang, G. Conibeer, and M. A. Green, “Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix,” Thin Solid Films 517(19), 5646–5652 (2009).
[Crossref]

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Figures (7)

Fig. 1
Fig. 1 X-TEM micrograph of sample D annealed at (a) 800 °C and (b) 900 °C. Inset is the HRTEM of nc-Si.
Fig. 2
Fig. 2 Raman spectra of samples A-E annealed at (a) 800 °C and (b) 900 °C.
Fig. 3
Fig. 3 (a) Optical absorbance spectra of samples A-E annealed at 900 °C. (b) The optical absorbance of all samples at 800 nm as a function of P concentration. The lines are the guided to the eye.
Fig. 4
Fig. 4 Open aperture Z-scan traces of samples A, D and E annealed at (a)-(c) 800 °C and (d)-(f) 900 °C. The excitation wavelength and intensity are 800 nm and I0 = 4.78 × 1010 W/cm2, respectively. The solid lines are the fitting curves of the experimental data.
Fig. 5
Fig. 5 The nonlinear absorption coefficient β as function of (a) P doping concentration and (b) the excitation wavelength. The inset is the optical absorbance spectra of samples A and D annealed at 800 °C ranged from 800 nm to 1400 nm.
Fig. 6
Fig. 6 The schematic diagrams of optical nonlinear transition process. The left graph is the two-step absorption process via the interface states for the un-doped sample, the middle and right diagrams demonstrate the reduction of the density of interfaces states and the widening of the bandgap with low and high P doping.
Fig. 7
Fig. 7 Open aperture Z-scan curve of sample B annealed at 900 °C. The excitation wavelength and intensity are 800 nm and I0 = 2.79 × 1011 W/cm2, respectively. The solid line is the fitting curve of the experimental data.

Equations (1)

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T = 1 1 2 2 β I 0 L e f f x 2 + 1 .

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