Abstract

A novel trigonal ordered langasite-type silicate crystal, Yb3+:Ca3NbGa3Si2O14 (Yb:CNGS), is characterized with respect to absorption and stimulated-emission cross-sections as well as Raman spectra using polarized light. Thanks to its excellent thermo-mechanical properties, highly-efficient multi-watt lasing is demonstrated. A compact a-cut 5 at .% Yb:CNGS crystal diode-pumped at 978 nm generated a maximum output power of 7.27 W at 1062-1068 nm with a slope efficiency of 78%. These values represent record parameters for ~1 μm lasers based on langasite-type crystals. The very broad and smooth gain cross sections of Yb:CNGS are attractive for ultrashort pulse and broadly tunable lasers at ~1 μm.

© 2017 Optical Society of America

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References

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
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2016 (5)

X. Zhang, Y. Zhou, J. Ren, D. Lu, H. Yu, Z. Wang, S. Guo, and X. Xu, “Growth, thermal and laser properties of a new self‐frequency doubling Yb:CNGS crystal,” CrystEngComm 18(28), 5338–5343 (2016).
[Crossref]

J. Ren, X. Zhang, X. Zhang, J. Guo, R. Cheng, and S. Guo, “Growth and enhanced electro-elastic properties of Nd3+:CNGS crystals with ordered langasite structure,” Mater. Lett. 167, 122–124 (2016).
[Crossref]

J. Li, X.-T. Zhang, J.-L. He, S. Guo, J. Ning, F. Lou, R. Zhao, X.-C. Su, J. Hou, and B.-T. Zhang, “759 fs pulse generation with Nd3+-doped CNGS ordered crystal based on a semiconductor saturable absorber mirror,” Appl. Opt. 55(20), 5444–5448 (2016).
[Crossref] [PubMed]

J. Ren, X. Zhang, X. Zhang, R. Cheng, J. Guo, X. Zhang, F. Yu, B. Huang, and S. Guo, “Crystal growth, experimental and theoretical studies on the electronic structure of CNGS and Nd:CNGS,” CrystEngComm 18(19), 3481–3487 (2016).
[Crossref]

R. Lan, P. Loiko, X. Mateos, Y. Wang, J. Li, Y. Pan, S. Y. Choi, M. H. Kim, F. Rotermund, A. Yasukevich, K. Yumashev, U. Griebner, and V. Petrov, “Passive Q-switching of microchip lasers based on Ho:YAG ceramics,” Appl. Opt. 55(18), 4877–4887 (2016).
[Crossref] [PubMed]

2015 (2)

2013 (1)

2011 (1)

2009 (1)

2005 (1)

M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80(2), 171–176 (2005).
[Crossref]

2004 (1)

A. S. Yasyukevich, V. G. Shcherbitskii, V. E. Kisel, A. V. Mandrik, and N. V. Kuleshov, “Integral method of reciprocity in the spectroscopy of laser crystals with impurity centers,” J. Appl. Spectrosc. 71(2), 202–208 (2004).
[Crossref]

2003 (1)

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

2002 (1)

I. H. Jung, A. Yoshikawa, T. Fukuda, and K. H. Auh, “Growth and structure of A3NbGa3Si2O14 (A = Sr, Ca) compounds,” J. Alloys Compd. 339(1–2), 149–155 (2002).
[Crossref]

1998 (1)

B. V. Mill, E. L. Belokoneva, and T. Fukuda, “New compounds with Ca3Ga2Ge4O14-type structure: A3XY3Z2O14 (A=Ca, Sr, Ba, Pb; X=Sb, Nb, Ta; Y=Ga, Al, Fe, In; Z=Si, Ge),” Russ. J. Inorg. Chem. 43(8), 1168–1175 (1998).

1996 (1)

K. Shimamura, H. Takeda, T. Kohno, and T. Fukuda, “Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications,” J. Cryst. Growth 163(4), 388–392 (1996).
[Crossref]

Aguiló, M.

Auh, K. H.

I. H. Jung, A. Yoshikawa, T. Fukuda, and K. H. Auh, “Growth and structure of A3NbGa3Si2O14 (A = Sr, Ca) compounds,” J. Alloys Compd. 339(1–2), 149–155 (2002).
[Crossref]

Balembois, F.

M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80(2), 171–176 (2005).
[Crossref]

Belokoneva, E. L.

B. V. Mill, E. L. Belokoneva, and T. Fukuda, “New compounds with Ca3Ga2Ge4O14-type structure: A3XY3Z2O14 (A=Ca, Sr, Ba, Pb; X=Sb, Nb, Ta; Y=Ga, Al, Fe, In; Z=Si, Ge),” Russ. J. Inorg. Chem. 43(8), 1168–1175 (1998).

Cheng, R.

J. Ren, X. Zhang, X. Zhang, R. Cheng, J. Guo, X. Zhang, F. Yu, B. Huang, and S. Guo, “Crystal growth, experimental and theoretical studies on the electronic structure of CNGS and Nd:CNGS,” CrystEngComm 18(19), 3481–3487 (2016).
[Crossref]

J. Ren, X. Zhang, X. Zhang, J. Guo, R. Cheng, and S. Guo, “Growth and enhanced electro-elastic properties of Nd3+:CNGS crystals with ordered langasite structure,” Mater. Lett. 167, 122–124 (2016).
[Crossref]

Cheng, X. F.

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Choi, S. Y.

Díaz, F.

Druon, F.

M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80(2), 171–176 (2005).
[Crossref]

Feng, T. L.

Ferrand, B.

M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80(2), 171–176 (2005).
[Crossref]

Fukuda, T.

I. H. Jung, A. Yoshikawa, T. Fukuda, and K. H. Auh, “Growth and structure of A3NbGa3Si2O14 (A = Sr, Ca) compounds,” J. Alloys Compd. 339(1–2), 149–155 (2002).
[Crossref]

B. V. Mill, E. L. Belokoneva, and T. Fukuda, “New compounds with Ca3Ga2Ge4O14-type structure: A3XY3Z2O14 (A=Ca, Sr, Ba, Pb; X=Sb, Nb, Ta; Y=Ga, Al, Fe, In; Z=Si, Ge),” Russ. J. Inorg. Chem. 43(8), 1168–1175 (1998).

K. Shimamura, H. Takeda, T. Kohno, and T. Fukuda, “Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications,” J. Cryst. Growth 163(4), 388–392 (1996).
[Crossref]

Gao, C.

Gao, M.

Georges, P.

M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80(2), 171–176 (2005).
[Crossref]

Griebner, U.

Guo, J.

J. Ren, X. Zhang, X. Zhang, R. Cheng, J. Guo, X. Zhang, F. Yu, B. Huang, and S. Guo, “Crystal growth, experimental and theoretical studies on the electronic structure of CNGS and Nd:CNGS,” CrystEngComm 18(19), 3481–3487 (2016).
[Crossref]

J. Ren, X. Zhang, X. Zhang, J. Guo, R. Cheng, and S. Guo, “Growth and enhanced electro-elastic properties of Nd3+:CNGS crystals with ordered langasite structure,” Mater. Lett. 167, 122–124 (2016).
[Crossref]

Guo, S.

J. Ren, X. Zhang, X. Zhang, J. Guo, R. Cheng, and S. Guo, “Growth and enhanced electro-elastic properties of Nd3+:CNGS crystals with ordered langasite structure,” Mater. Lett. 167, 122–124 (2016).
[Crossref]

J. Li, X.-T. Zhang, J.-L. He, S. Guo, J. Ning, F. Lou, R. Zhao, X.-C. Su, J. Hou, and B.-T. Zhang, “759 fs pulse generation with Nd3+-doped CNGS ordered crystal based on a semiconductor saturable absorber mirror,” Appl. Opt. 55(20), 5444–5448 (2016).
[Crossref] [PubMed]

J. Ren, X. Zhang, X. Zhang, R. Cheng, J. Guo, X. Zhang, F. Yu, B. Huang, and S. Guo, “Crystal growth, experimental and theoretical studies on the electronic structure of CNGS and Nd:CNGS,” CrystEngComm 18(19), 3481–3487 (2016).
[Crossref]

X. Zhang, Y. Zhou, J. Ren, D. Lu, H. Yu, Z. Wang, S. Guo, and X. Xu, “Growth, thermal and laser properties of a new self‐frequency doubling Yb:CNGS crystal,” CrystEngComm 18(28), 5338–5343 (2016).
[Crossref]

X. Zhang, X. Zhang, S. Guo, J. He, K. Han, F. Lou, B. Zhang, R. Wang, and X. Liu, “Growth and optical properties of a new CGG-type laser crystal Nd3+:CNGS,” Opt. Mater. Express 5(5), 977–985 (2015).
[Crossref]

Guo, S. Y.

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Han, K.

He, J.

He, J. L.

He, J.-L.

Hou, J.

Huang, B.

J. Ren, X. Zhang, X. Zhang, R. Cheng, J. Guo, X. Zhang, F. Yu, B. Huang, and S. Guo, “Crystal growth, experimental and theoretical studies on the electronic structure of CNGS and Nd:CNGS,” CrystEngComm 18(19), 3481–3487 (2016).
[Crossref]

Jacquemet, C.

M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80(2), 171–176 (2005).
[Crossref]

Jacquemet, M.

M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80(2), 171–176 (2005).
[Crossref]

Janel, N.

M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80(2), 171–176 (2005).
[Crossref]

Jiang, M.

Jung, I. H.

I. H. Jung, A. Yoshikawa, T. Fukuda, and K. H. Auh, “Growth and structure of A3NbGa3Si2O14 (A = Sr, Ca) compounds,” J. Alloys Compd. 339(1–2), 149–155 (2002).
[Crossref]

Kim, M. H.

Kisel, V. E.

A. S. Yasyukevich, V. G. Shcherbitskii, V. E. Kisel, A. V. Mandrik, and N. V. Kuleshov, “Integral method of reciprocity in the spectroscopy of laser crystals with impurity centers,” J. Appl. Spectrosc. 71(2), 202–208 (2004).
[Crossref]

Kohno, T.

K. Shimamura, H. Takeda, T. Kohno, and T. Fukuda, “Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications,” J. Cryst. Growth 163(4), 388–392 (1996).
[Crossref]

Kuleshov, N.

Kuleshov, N. V.

A. S. Yasyukevich, V. G. Shcherbitskii, V. E. Kisel, A. V. Mandrik, and N. V. Kuleshov, “Integral method of reciprocity in the spectroscopy of laser crystals with impurity centers,” J. Appl. Spectrosc. 71(2), 202–208 (2004).
[Crossref]

Lan, J.

J. Lan, G. Lu, Z. Wang, G. Zhu, D. Yuan, and H. Xia, “Raman scattering spectra of Ca3NbGa3Si2O14 (CNGS) crystals,” Phys. Status Solidi242(10), 1996–2004 (2005) (a).
[Crossref]

Lan, R.

Li, D. C.

Li, G. Q.

Li, J.

Liu, X.

Loiko, P.

Lou, F.

Lu, D.

X. Zhang, Y. Zhou, J. Ren, D. Lu, H. Yu, Z. Wang, S. Guo, and X. Xu, “Growth, thermal and laser properties of a new self‐frequency doubling Yb:CNGS crystal,” CrystEngComm 18(28), 5338–5343 (2016).
[Crossref]

Lu, G.

J. Lan, G. Lu, Z. Wang, G. Zhu, D. Yuan, and H. Xia, “Raman scattering spectra of Ca3NbGa3Si2O14 (CNGS) crystals,” Phys. Status Solidi242(10), 1996–2004 (2005) (a).
[Crossref]

Lv, M. K.

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Mandrik, A. V.

A. S. Yasyukevich, V. G. Shcherbitskii, V. E. Kisel, A. V. Mandrik, and N. V. Kuleshov, “Integral method of reciprocity in the spectroscopy of laser crystals with impurity centers,” J. Appl. Spectrosc. 71(2), 202–208 (2004).
[Crossref]

Mateos, X.

Mill, B. V.

B. V. Mill, E. L. Belokoneva, and T. Fukuda, “New compounds with Ca3Ga2Ge4O14-type structure: A3XY3Z2O14 (A=Ca, Sr, Ba, Pb; X=Sb, Nb, Ta; Y=Ga, Al, Fe, In; Z=Si, Ge),” Russ. J. Inorg. Chem. 43(8), 1168–1175 (1998).

Ning, J.

Pan, L. H.

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Pan, Y.

Petit, J.

M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80(2), 171–176 (2005).
[Crossref]

Petrov, V.

Qiao, W. C.

Ren, J.

X. Zhang, Y. Zhou, J. Ren, D. Lu, H. Yu, Z. Wang, S. Guo, and X. Xu, “Growth, thermal and laser properties of a new self‐frequency doubling Yb:CNGS crystal,” CrystEngComm 18(28), 5338–5343 (2016).
[Crossref]

J. Ren, X. Zhang, X. Zhang, J. Guo, R. Cheng, and S. Guo, “Growth and enhanced electro-elastic properties of Nd3+:CNGS crystals with ordered langasite structure,” Mater. Lett. 167, 122–124 (2016).
[Crossref]

J. Ren, X. Zhang, X. Zhang, R. Cheng, J. Guo, X. Zhang, F. Yu, B. Huang, and S. Guo, “Crystal growth, experimental and theoretical studies on the electronic structure of CNGS and Nd:CNGS,” CrystEngComm 18(19), 3481–3487 (2016).
[Crossref]

Rotermund, F.

Serres, J. M.

Shcherbitskii, V. G.

A. S. Yasyukevich, V. G. Shcherbitskii, V. E. Kisel, A. V. Mandrik, and N. V. Kuleshov, “Integral method of reciprocity in the spectroscopy of laser crystals with impurity centers,” J. Appl. Spectrosc. 71(2), 202–208 (2004).
[Crossref]

Shimamura, K.

K. Shimamura, H. Takeda, T. Kohno, and T. Fukuda, “Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications,” J. Cryst. Growth 163(4), 388–392 (1996).
[Crossref]

Su, L. B.

Su, X.-C.

Takeda, H.

K. Shimamura, H. Takeda, T. Kohno, and T. Fukuda, “Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications,” J. Cryst. Growth 163(4), 388–392 (1996).
[Crossref]

Viana, B.

M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80(2), 171–176 (2005).
[Crossref]

Vivien, D.

M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80(2), 171–176 (2005).
[Crossref]

Wang, J.

Wang, Q.

Wang, Q. G.

Wang, R.

Wang, Y.

Wang, Z.

X. Zhang, Y. Zhou, J. Ren, D. Lu, H. Yu, Z. Wang, S. Guo, and X. Xu, “Growth, thermal and laser properties of a new self‐frequency doubling Yb:CNGS crystal,” CrystEngComm 18(28), 5338–5343 (2016).
[Crossref]

Q. Wang, Z. Wei, Y. Zhang, Z. Zhang, H. Yu, H. Zhang, J. Wang, M. Gao, C. Gao, and Z. Wang, “Tunable continuous-wave laser at quasi-three-level with a disordered Nd:LGS crystal,” Opt. Lett. 36(10), 1770–1772 (2011).
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[Crossref] [PubMed]

J. Lan, G. Lu, Z. Wang, G. Zhu, D. Yuan, and H. Xia, “Raman scattering spectra of Ca3NbGa3Si2O14 (CNGS) crystals,” Phys. Status Solidi242(10), 1996–2004 (2005) (a).
[Crossref]

Wang, Z. M.

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Wei, Z.

Xia, H.

J. Lan, G. Lu, Z. Wang, G. Zhu, D. Yuan, and H. Xia, “Raman scattering spectra of Ca3NbGa3Si2O14 (CNGS) crystals,” Phys. Status Solidi242(10), 1996–2004 (2005) (a).
[Crossref]

Xu, D.

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Xu, J.

Xu, X.

X. Zhang, Y. Zhou, J. Ren, D. Lu, H. Yu, Z. Wang, S. Guo, and X. Xu, “Growth, thermal and laser properties of a new self‐frequency doubling Yb:CNGS crystal,” CrystEngComm 18(28), 5338–5343 (2016).
[Crossref]

Xu, X. D.

Yang, K. J.

Yang, Y.

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A. S. Yasyukevich, V. G. Shcherbitskii, V. E. Kisel, A. V. Mandrik, and N. V. Kuleshov, “Integral method of reciprocity in the spectroscopy of laser crystals with impurity centers,” J. Appl. Spectrosc. 71(2), 202–208 (2004).
[Crossref]

Yoshikawa, A.

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[Crossref]

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J. Ren, X. Zhang, X. Zhang, R. Cheng, J. Guo, X. Zhang, F. Yu, B. Huang, and S. Guo, “Crystal growth, experimental and theoretical studies on the electronic structure of CNGS and Nd:CNGS,” CrystEngComm 18(19), 3481–3487 (2016).
[Crossref]

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Yu, Y.

Yuan, D.

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[Crossref]

Yuan, D. R.

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Yumashev, K.

Zhang, B.

Zhang, B.-T.

Zhang, H.

Zhang, X.

X. Zhang, Y. Zhou, J. Ren, D. Lu, H. Yu, Z. Wang, S. Guo, and X. Xu, “Growth, thermal and laser properties of a new self‐frequency doubling Yb:CNGS crystal,” CrystEngComm 18(28), 5338–5343 (2016).
[Crossref]

J. Ren, X. Zhang, X. Zhang, R. Cheng, J. Guo, X. Zhang, F. Yu, B. Huang, and S. Guo, “Crystal growth, experimental and theoretical studies on the electronic structure of CNGS and Nd:CNGS,” CrystEngComm 18(19), 3481–3487 (2016).
[Crossref]

J. Ren, X. Zhang, X. Zhang, R. Cheng, J. Guo, X. Zhang, F. Yu, B. Huang, and S. Guo, “Crystal growth, experimental and theoretical studies on the electronic structure of CNGS and Nd:CNGS,” CrystEngComm 18(19), 3481–3487 (2016).
[Crossref]

J. Ren, X. Zhang, X. Zhang, R. Cheng, J. Guo, X. Zhang, F. Yu, B. Huang, and S. Guo, “Crystal growth, experimental and theoretical studies on the electronic structure of CNGS and Nd:CNGS,” CrystEngComm 18(19), 3481–3487 (2016).
[Crossref]

J. Ren, X. Zhang, X. Zhang, J. Guo, R. Cheng, and S. Guo, “Growth and enhanced electro-elastic properties of Nd3+:CNGS crystals with ordered langasite structure,” Mater. Lett. 167, 122–124 (2016).
[Crossref]

J. Ren, X. Zhang, X. Zhang, J. Guo, R. Cheng, and S. Guo, “Growth and enhanced electro-elastic properties of Nd3+:CNGS crystals with ordered langasite structure,” Mater. Lett. 167, 122–124 (2016).
[Crossref]

X. Zhang, X. Zhang, S. Guo, J. He, K. Han, F. Lou, B. Zhang, R. Wang, and X. Liu, “Growth and optical properties of a new CGG-type laser crystal Nd3+:CNGS,” Opt. Mater. Express 5(5), 977–985 (2015).
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X. Zhang, X. Zhang, S. Guo, J. He, K. Han, F. Lou, B. Zhang, R. Wang, and X. Liu, “Growth and optical properties of a new CGG-type laser crystal Nd3+:CNGS,” Opt. Mater. Express 5(5), 977–985 (2015).
[Crossref]

Zhang, X.-T.

Zhang, Y.

Zhang, Z.

Zhao, J.

Zhao, R.

Zhao, S. Z.

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Zhou, Y.

X. Zhang, Y. Zhou, J. Ren, D. Lu, H. Yu, Z. Wang, S. Guo, and X. Xu, “Growth, thermal and laser properties of a new self‐frequency doubling Yb:CNGS crystal,” CrystEngComm 18(28), 5338–5343 (2016).
[Crossref]

Zhu, G.

J. Lan, G. Lu, Z. Wang, G. Zhu, D. Yuan, and H. Xia, “Raman scattering spectra of Ca3NbGa3Si2O14 (CNGS) crystals,” Phys. Status Solidi242(10), 1996–2004 (2005) (a).
[Crossref]

Appl. Opt. (2)

Appl. Phys. B (1)

M. Jacquemet, C. Jacquemet, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80(2), 171–176 (2005).
[Crossref]

CrystEngComm (2)

X. Zhang, Y. Zhou, J. Ren, D. Lu, H. Yu, Z. Wang, S. Guo, and X. Xu, “Growth, thermal and laser properties of a new self‐frequency doubling Yb:CNGS crystal,” CrystEngComm 18(28), 5338–5343 (2016).
[Crossref]

J. Ren, X. Zhang, X. Zhang, R. Cheng, J. Guo, X. Zhang, F. Yu, B. Huang, and S. Guo, “Crystal growth, experimental and theoretical studies on the electronic structure of CNGS and Nd:CNGS,” CrystEngComm 18(19), 3481–3487 (2016).
[Crossref]

J. Alloys Compd. (1)

I. H. Jung, A. Yoshikawa, T. Fukuda, and K. H. Auh, “Growth and structure of A3NbGa3Si2O14 (A = Sr, Ca) compounds,” J. Alloys Compd. 339(1–2), 149–155 (2002).
[Crossref]

J. Appl. Spectrosc. (1)

A. S. Yasyukevich, V. G. Shcherbitskii, V. E. Kisel, A. V. Mandrik, and N. V. Kuleshov, “Integral method of reciprocity in the spectroscopy of laser crystals with impurity centers,” J. Appl. Spectrosc. 71(2), 202–208 (2004).
[Crossref]

J. Cryst. Growth (2)

K. Shimamura, H. Takeda, T. Kohno, and T. Fukuda, “Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications,” J. Cryst. Growth 163(4), 388–392 (1996).
[Crossref]

Z. M. Wang, X. F. Cheng, D. R. Yuan, L. H. Pan, S. Y. Guo, D. Xu, and M. K. Lv, “Crystal growth and properties of Ca3NbGa3Si2O14 single crystals,” J. Cryst. Growth 249(1–2), 240–244 (2003).
[Crossref]

Mater. Lett. (1)

J. Ren, X. Zhang, X. Zhang, J. Guo, R. Cheng, and S. Guo, “Growth and enhanced electro-elastic properties of Nd3+:CNGS crystals with ordered langasite structure,” Mater. Lett. 167, 122–124 (2016).
[Crossref]

Opt. Express (1)

Opt. Lett. (2)

Opt. Mater. Express (2)

Russ. J. Inorg. Chem. (1)

B. V. Mill, E. L. Belokoneva, and T. Fukuda, “New compounds with Ca3Ga2Ge4O14-type structure: A3XY3Z2O14 (A=Ca, Sr, Ba, Pb; X=Sb, Nb, Ta; Y=Ga, Al, Fe, In; Z=Si, Ge),” Russ. J. Inorg. Chem. 43(8), 1168–1175 (1998).

Other (2)

J. Lan, G. Lu, Z. Wang, G. Zhu, D. Yuan, and H. Xia, “Raman scattering spectra of Ca3NbGa3Si2O14 (CNGS) crystals,” Phys. Status Solidi242(10), 1996–2004 (2005) (a).
[Crossref]

P. Loiko, J. M. Serres, X. Mateos, H. Yu, H. Zhang, J. Liu, K. Yumashev, U. Griebner, V. Petrov, M. Aguiló, and F. Díaz, “Thermal lensing and multi-watt microchip laser operation of Yb:YCOB crystals,” IEEE Photonics J. 8(3), 1501312 (2016).

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Figures (7)

Fig. 1
Fig. 1 5 at.% Yb:CNGS crystal: (a) Photograph of the as-grown bulk; (b) transmission spectrum (T) of an a-cut 4-mm thick sample in the visible, inset: image of this sample.
Fig. 2
Fig. 2 Structural study of a 5 at.% Yb:CNGS crystal: (a) fragment of the CNGS structure in projection to the a-b and b-c planes; (b) polarized Raman spectra, λexc = 514 nm.
Fig. 3
Fig. 3 Spectroscopy of the trigonal Yb:CNGS crystal: (a) absorption, σabs, and stimulated-emission, σSE, cross-sections for π and σ-polarizations, inset – the spectrum around the ZPL; (b) gain cross-sections, σg = βσSE – (1 – β)σabs, for σ-polarization, β is the inversion ratio, β = N2/NYb.
Fig. 4
Fig. 4 Luminescence decay curve for a 1 at.% Yb:CNGS crystal: circles – experimental data, black curve – single-exponential fit. Duration of the excitation pulse – 5 ns.
Fig. 5
Fig. 5 Continuous-wave Yb:CNGS laser: (a) input-output dependences, η – slope efficiency; (b) typical laser emission spectra measured at Pabs = 5.5 W (a-cut crystal, 3 at.% Yb3+, 3 mm-thick).
Fig. 6
Fig. 6 Comparison of the laser performance of a-cut Yb:CNGS crystals with various Yb3+ doping levels (TOC = 1%, σ-polarization): (a) input-output dependences, η – slope efficiency; (b) typical laser emission spectra measured at maximum Pabs.
Fig. 7
Fig. 7 2D spatial intensity profile of the laser output from a CW Yb:CNGS laser (a-cut crystal, 5 at.% Yb3+, 4 mm-thick) measured at Pabs = 11.2 W.

Tables (1)

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Table 1 Output Parameters of CW Yb:CNGS Lasers (a-cut, TOC = 1%).

Equations (1)

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σ SE i (λ)= 1 8π n i 2 τ Yb c 3 σ abs i (λ) e hc/(kTλ) i=π,σ,σ λ 4 σ abs i (λ) e hc/(kTλ) dλ ,

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