Abstract

A series of SiGeSn alloy samples with various Si and Sn compositions and thicknesses were grown on Ge-buffered Si substrates. The growth was conducted by using low-cost commercially available silane and germane precursors in a standard industrial reduced pressure chemical vapor deposition reactor. Si and Sn compositional- and film thickness-dependent material and optical properties have been characterized using X-ray diffraction (XRD), Raman, photoluminescence (PL), and ellipsometry spectroscopies. Moreover, thermal stability in harsh growth environment, such as in subsequent III-V growth, was studied for future multi-junction solar cell applications. In situ rapid thermal annealing at 650°C was conducted to investigate the enhanced material quality and direct bandgap emission, which were confirmed by XRD, transmission electron microscopy, Raman, and PL measurements.

© 2017 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering

Jun Zheng, Suyuan Wang, Tianwei Zhou, Yuhua Zuo, Buwen Cheng, and Qiming Wang
Opt. Mater. Express 5(2) 287-294 (2015)

Study of GeSn based heterostructures: towards optimized group IV MQW LEDs

D. Stange, N. von den Driesch, D. Rainko, C. Schulte-Braucks, S. Wirths, G. Mussler, A. T. Tiedemann, T. Stoica, J. M. Hartmann, Z. Ikonic, S. Mantl, D. Grützmacher, and D. Buca
Opt. Express 24(2) 1358-1367 (2016)

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

Seyed Amir Ghetmiri, Yiyin Zhou, Joe Margetis, Sattar Al-Kabi, Wei Dou, Aboozar Mosleh, Wei Du, Andrian Kuchuk, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Hameed A. Naseem, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu
Opt. Lett. 42(3) 387-390 (2017)

References

  • View by:
  • |
  • |
  • |

  1. S. Wirths, D. Buca, and S. Mantl, “Si–Ge–Sn alloys: From growth to applications,” Prog. Cryst. Growth Charact. Mater. 62(1), 1–39 (2016).
    [Crossref]
  2. R. Soref, “Emerging SiGeSn Integrated-Photonics Technology,” IEEE Photonics Society Summer Topical Meeting Series (SUM), Newport Beach, CA, 100–101 (2016).
  3. J. Kouvetakis and A. V. G. Chizmeshya, “New classes of Si-based photonic materials and device architectures via designer molecular routes,” J. Mater. Chem. 17(17), 1649 (2007).
    [Crossref]
  4. A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
    [Crossref]
  5. S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
    [Crossref]
  6. C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
    [Crossref]
  7. S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
    [Crossref]
  8. J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
    [Crossref]
  9. S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
    [Crossref]
  10. Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
    [Crossref]
  11. R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
    [Crossref]
  12. B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
    [Crossref]
  13. S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
    [Crossref]
  14. N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
    [Crossref] [PubMed]
  15. J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
    [Crossref]
  16. G. Sun, R. Soref, and H. Cheng, “Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser,” J. Appl. Phys. 108(3), 033107 (2010).
    [Crossref]
  17. H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
    [Crossref]
  18. S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
    [Crossref] [PubMed]
  19. J. Zheng, S. Wang, T. Zhou, Y. Zuo, B. Cheng, and Q. Wang, “Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering,” Opt. Mater. Express 5(2), 287–294 (2015).
    [Crossref]
  20. H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
    [Crossref]
  21. L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
    [Crossref]
  22. H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
    [Crossref]
  23. S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
    [Crossref]
  24. J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
    [Crossref]
  25. P. Moontragoon, R. Soref, and Z. Ikonic, “The direct and indirect bandgaps of unstrained SixGe1− x− ySny and their photonic device applications,” J. Appl. Phys. 112(7), 073106 (2012).
    [Crossref]
  26. A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

2017 (1)

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

2016 (7)

S. Wirths, D. Buca, and S. Mantl, “Si–Ge–Sn alloys: From growth to applications,” Prog. Cryst. Growth Charact. Mater. 62(1), 1–39 (2016).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

2015 (2)

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

J. Zheng, S. Wang, T. Zhou, Y. Zuo, B. Cheng, and Q. Wang, “Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering,” Opt. Mater. Express 5(2), 287–294 (2015).
[Crossref]

2014 (6)

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

2013 (3)

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

2012 (2)

P. Moontragoon, R. Soref, and Z. Ikonic, “The direct and indirect bandgaps of unstrained SixGe1− x− ySny and their photonic device applications,” J. Appl. Phys. 112(7), 073106 (2012).
[Crossref]

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

2011 (1)

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

2010 (1)

G. Sun, R. Soref, and H. Cheng, “Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser,” J. Appl. Phys. 108(3), 033107 (2010).
[Crossref]

2007 (1)

J. Kouvetakis and A. V. G. Chizmeshya, “New classes of Si-based photonic materials and device architectures via designer molecular routes,” J. Mater. Chem. 17(17), 1649 (2007).
[Crossref]

2006 (1)

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

Agha, I.

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

Alher, M.

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

Al-Kabi, S.

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Allebe, C.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Aoki, T.

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

Badel, N.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Ballif, C.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Barraud, L.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Beeler, R.

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

Bernardy, P.

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

Breuer, U.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

Buca, D.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, D. Buca, and S. Mantl, “Si–Ge–Sn alloys: From growth to applications,” Prog. Cryst. Growth Charact. Mater. 62(1), 1–39 (2016).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

Chen, R.

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

Cheng, B.

Cheng, H.

G. Sun, R. Soref, and H. Cheng, “Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser,” J. Appl. Phys. 108(3), 033107 (2010).
[Crossref]

Chizmeshya, A.

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

Chizmeshya, A. V. G.

J. Kouvetakis and A. V. G. Chizmeshya, “New classes of Si-based photonic materials and device architectures via designer molecular routes,” J. Mater. Chem. 17(17), 1649 (2007).
[Crossref]

Collier, B.

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Conley, B. R.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

Cousar, L.

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

Couser, L.

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

D’Costa, V. R.

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

Descoeudres, A.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Desjardins, P.

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

Despeisse, M.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Domulevicz, L.

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

Dou, W.

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

Driesch, N.

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

Du, W.

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Eisenschmidt, C.

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

Essig, S.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Faes, A.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Favaro, R.

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

Fournier-Lupien, J.-H.

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

Gallagher, J. D.

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

Geiger, R.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

Geisz, J. F.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Ghetmiri, S.

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Ghetmiri, S. A.

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Grant, P.

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

Grützmacher, D.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

Harris, J.

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

Harrison, P.

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

Hartmann, J.

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

Hartmann, J. M.

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

Hartmann, J.-M.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

Hayazawa, N.

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

Holländer, B.

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

Huo, Y.

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

Ikonic, Z.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

P. Moontragoon, R. Soref, and Z. Ikonic, “The direct and indirect bandgaps of unstrained SixGe1− x− ySny and their photonic device applications,” J. Appl. Phys. 112(7), 073106 (2012).
[Crossref]

Jamshidi, A.

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

Jiang, L.

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

Kamins, T.

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

Kouvetakis, J.

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

J. Kouvetakis and A. V. G. Chizmeshya, “New classes of Si-based photonic materials and device architectures via designer molecular routes,” J. Mater. Chem. 17(17), 1649 (2007).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

Kurosawa, M.

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

LaSalvia, V.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Levrat, J.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Li, B.

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

Li, Z.

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

Lin, H.

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

Liu, J.

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Lu, W.

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

Mantl, S.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, D. Buca, and S. Mantl, “Si–Ge–Sn alloys: From growth to applications,” Prog. Cryst. Growth Charact. Mater. 62(1), 1–39 (2016).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

Margetis, J.

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Mathews, J.

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

Menendez, J.

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

Menéndez, J.

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

Moontragoon, P.

P. Moontragoon, R. Soref, and Z. Ikonic, “The direct and indirect bandgaps of unstrained SixGe1− x− ySny and their photonic device applications,” J. Appl. Phys. 112(7), 073106 (2012).
[Crossref]

Mortazavi, M.

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

Mosleh, A.

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Moutanabbir, O.

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

Mukherjee, S.

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

Mussler, G.

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

Nakatsuka, O.

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

Naseem, H.

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

Naseem, H. A.

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

Nazzal, A.

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

Noroozi, M.

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

Östling, M.

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

Paviet-Salomon, B.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Pham, T.

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

Pippel, E.

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

Povstugar, I.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

Quinde, R.

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Radamson, H. H.

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

Rainko, D.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

Roucka, R.

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

Sakashita, M.

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

Savenko, A.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

Schilling, J.

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

Schmidt, G.

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

Senaratne, C. L.

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

Sigg, H.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

Soref, R.

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

P. Moontragoon, R. Soref, and Z. Ikonic, “The direct and indirect bandgaps of unstrained SixGe1− x− ySny and their photonic device applications,” J. Appl. Phys. 112(7), 073106 (2012).
[Crossref]

G. Sun, R. Soref, and H. Cheng, “Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser,” J. Appl. Phys. 108(3), 033107 (2010).
[Crossref]

Soref, R. A.

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

Stange, D.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

Steiner, M. A.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Stoica, T.

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

Stoicaa, T.

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

Stradins, P.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Sun, G.

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

G. Sun, R. Soref, and H. Cheng, “Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser,” J. Appl. Phys. 108(3), 033107 (2010).
[Crossref]

Takeuchi, W.

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

Talalaev, V.

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

Taoka, N.

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

Thompson, P. E.

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

Tiedemann, A.

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

Tolle, J.

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

Tonkikh, A.

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

Tran, H.

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

von den Driesch, N.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

Wang, Q.

Wang, S.

Ward, S.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Weng, C.

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

Werner, P.

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

Wirths, S.

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, D. Buca, and S. Mantl, “Si–Ge–Sn alloys: From growth to applications,” Prog. Cryst. Growth Charact. Mater. 62(1), 1–39 (2016).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

Xu, C.

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

Young, D. L.

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Yu, S.

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

Yu, S.-Q.

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Zaima, S.

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

Zakharov, N.

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

Zhao, Y.

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

Zheng, J.

Zhou, T.

Zhou, Y.

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

Zuo, Y.

Appl. Phys. Lett. (6)

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

Chem. Mater. (2)

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

ECS Trans. (3)

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

IEEE J. of Photovoltaics (1)

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

IEEE J. Quantum Electron. (1)

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

J. Appl. Phys. (5)

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

P. Moontragoon, R. Soref, and Z. Ikonic, “The direct and indirect bandgaps of unstrained SixGe1− x− ySny and their photonic device applications,” J. Appl. Phys. 112(7), 073106 (2012).
[Crossref]

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

G. Sun, R. Soref, and H. Cheng, “Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser,” J. Appl. Phys. 108(3), 033107 (2010).
[Crossref]

J. Mater. Chem. (1)

J. Kouvetakis and A. V. G. Chizmeshya, “New classes of Si-based photonic materials and device architectures via designer molecular routes,” J. Mater. Chem. 17(17), 1649 (2007).
[Crossref]

J. Vac. Sci. Technol. B (1)

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

Opt. Mater. Express (1)

Prog. Cryst. Growth Charact. Mater. (1)

S. Wirths, D. Buca, and S. Mantl, “Si–Ge–Sn alloys: From growth to applications,” Prog. Cryst. Growth Charact. Mater. 62(1), 1–39 (2016).
[Crossref]

Sci. Technol. Adv. Mater. (1)

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

Small (1)

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

Thin Solid Films (1)

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

Other (1)

R. Soref, “Emerging SiGeSn Integrated-Photonics Technology,” IEEE Photonics Society Summer Topical Meeting Series (SUM), Newport Beach, CA, 100–101 (2016).

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (9)

Fig. 1
Fig. 1

Typical normalized channeling and random RBS spectra for a SiGeSn sample.

Fig. 2
Fig. 2

2θ-ω scan from (004) plane for three sets of samples. (a) Samples A, B, and C feature the same Si and Sn compositions but different film thicknesses. Inset: typical RSM of sample C. (b) Samples A, D, and E feature the same Sn composition and film thickness but different Si compositions. Inset: typical RSM of sample A. (c) Samples F and G feature relatively high Si incorporation. (d) RSMs of samples F and G.

Fig. 3
Fig. 3

Raman spectra of samples A, D, and E. The inset shows a zoomed-in plot of the Ge-Sn modes region.

Fig. 4
Fig. 4

(a) PL spectra as the thickness varies in samples A, B, and C. (b) PL measurements as the Si content increases in samples A, D, and E. (c) PL spectra of samples with high Si content. (d) Temperature dependent PL spectra of sample G.

Fig. 5
Fig. 5

Temperature-dependent of the PL spectra of sample G as a function of (a) Line-widths and (b) PL peak positions. The solid lines in (b) represent Varshni fittings.

Fig. 6
Fig. 6

Spectral absorption coefficient curves of (a) samples A, B, and C. (b) Samples A, D, E, F, and G.

Fig. 7
Fig. 7

(a) 2θ-ω scans and (b) RSM contour plots of sample F as-grown and after annealing.

Fig. 8
Fig. 8

Cross sectional TEM of sample F. As-grown in (a) and (b). After rapid thermal annealing in (c) and (d).

Fig. 9
Fig. 9

Sample F as-grown and after annealing. (a) Stacked Raman spectra. The inset shows the Ge-Sn modes. (b) PL spectra.

Tables (2)

Tables Icon

Table 1 Summary of SiGeSn samples

Tables Icon

Table 2 Varshni’s equation fitting parameters of the temperature-dependent PL spectra of sample G

Equations (1)

Equations on this page are rendered with MathJax. Learn more.

E SiGeSn ( T ) = E SiGeSn ( 0 ) αT 2 / ( T + β )

Metrics