Study of material and optical properties of Si_xGe_1-x-ySn_y alloys for Si-based optoelectronic device applications

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, D. Buca, and S. Mantl, “Si–Ge–Sn alloys: From growth to applications,” Prog. Cryst. Growth Charact. Mater. 62(1), 1–39 (2016).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

J. Zheng, S. Wang, T. Zhou, Y. Zuo, B. Cheng, and Q. Wang, “Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering,” Opt. Mater. Express 5(2), 287–294 (2015).
[Crossref]

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

P. Moontragoon, R. Soref, and Z. Ikonic, “The direct and indirect bandgaps of unstrained SixGe1− x− ySny and their photonic device applications,” J. Appl. Phys. 112(7), 073106 (2012).
[Crossref]

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

G. Sun, R. Soref, and H. Cheng, “Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser,” J. Appl. Phys. 108(3), 033107 (2010).
[Crossref]

J. Kouvetakis and A. V. G. Chizmeshya, “New classes of Si-based photonic materials and device architectures via designer molecular routes,” J. Mater. Chem. 17(17), 1649 (2007).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, D. Buca, and S. Mantl, “Si–Ge–Sn alloys: From growth to applications,” Prog. Cryst. Growth Charact. Mater. 62(1), 1–39 (2016).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

J. Zheng, S. Wang, T. Zhou, Y. Zuo, B. Cheng, and Q. Wang, “Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering,” Opt. Mater. Express 5(2), 287–294 (2015).
[Crossref]

G. Sun, R. Soref, and H. Cheng, “Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser,” J. Appl. Phys. 108(3), 033107 (2010).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

J. Kouvetakis and A. V. G. Chizmeshya, “New classes of Si-based photonic materials and device architectures via designer molecular routes,” J. Mater. Chem. 17(17), 1649 (2007).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

P. Moontragoon, R. Soref, and Z. Ikonic, “The direct and indirect bandgaps of unstrained SixGe1− x− ySny and their photonic device applications,” J. Appl. Phys. 112(7), 073106 (2012).
[Crossref]

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

J. Kouvetakis and A. V. G. Chizmeshya, “New classes of Si-based photonic materials and device architectures via designer molecular routes,” J. Mater. Chem. 17(17), 1649 (2007).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, D. Buca, and S. Mantl, “Si–Ge–Sn alloys: From growth to applications,” Prog. Cryst. Growth Charact. Mater. 62(1), 1–39 (2016).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

P. Moontragoon, R. Soref, and Z. Ikonic, “The direct and indirect bandgaps of unstrained SixGe1− x− ySny and their photonic device applications,” J. Appl. Phys. 112(7), 073106 (2012).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

P. Moontragoon, R. Soref, and Z. Ikonic, “The direct and indirect bandgaps of unstrained SixGe1− x− ySny and their photonic device applications,” J. Appl. Phys. 112(7), 073106 (2012).
[Crossref]

G. Sun, R. Soref, and H. Cheng, “Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser,” J. Appl. Phys. 108(3), 033107 (2010).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

G. Sun, R. Soref, and H. Cheng, “Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser,” J. Appl. Phys. 108(3), 033107 (2010).
[Crossref]

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

J. Zheng, S. Wang, T. Zhou, Y. Zuo, B. Cheng, and Q. Wang, “Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering,” Opt. Mater. Express 5(2), 287–294 (2015).
[Crossref]

J. Zheng, S. Wang, T. Zhou, Y. Zuo, B. Cheng, and Q. Wang, “Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering,” Opt. Mater. Express 5(2), 287–294 (2015).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, D. Buca, and S. Mantl, “Si–Ge–Sn alloys: From growth to applications,” Prog. Cryst. Growth Charact. Mater. 62(1), 1–39 (2016).
[Crossref]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

J. Zheng, S. Wang, T. Zhou, Y. Zuo, B. Cheng, and Q. Wang, “Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering,” Opt. Mater. Express 5(2), 287–294 (2015).
[Crossref]

J. Zheng, S. Wang, T. Zhou, Y. Zuo, B. Cheng, and Q. Wang, “Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering,” Opt. Mater. Express 5(2), 287–294 (2015).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

J. Zheng, S. Wang, T. Zhou, Y. Zuo, B. Cheng, and Q. Wang, “Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering,” Opt. Mater. Express 5(2), 287–294 (2015).
[Crossref]

S. A. Ghetmiri, W. Du, J. Margetis, A. Mosleh, L. Couser, B. R. Conley, L. Domulevicz, A. Nazzal, G. Sun, R. A. Soref, J. Tolle, B. Li, H. A. Naseem, and S. Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence,” Appl. Phys. Lett. 105(15), 151109 (2014).
[Crossref]

S. Al-Kabi, S. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 μm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109(17), 171105 (2016).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

J. Tolle, R. Roucka, A. Chizmeshya, J. Kouvetakis, V. R. D’Costa, and J. Menéndez, “Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon,” Appl. Phys. Lett. 88(25), 252112 (2006).
[Crossref]

H. Lin, R. Chen, W. Lu, Y. Huo, T. Kamins, and J. Harris, “Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 100(14), 141908 (2012).
[Crossref]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, and O. Moutanabbir, “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys,” Appl. Phys. Lett. 103(26), 263103 (2013).
[Crossref]

L. Jiang, C. Xu, J. D. Gallagher, R. Favaro, T. Aoki, J. Menéndez, and J. Kouvetakis, “Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications,” Chem. Mater. 26(8), 2522–2531 (2014).
[Crossref]

C. L. Senaratne, J. D. Gallagher, T. Aoki, J. Kouvetakis, and J. Menéndez, “Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries,” Chem. Mater. 26(20), 6033–6041 (2014).
[Crossref]

S. Wirths, Z. Ikonic, N. Driesch, G. Mussler, U. Breuer, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoicaa, J. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures,” ECS Trans. 64(6), 689–696 (2014).
[Crossref]

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, J. Menéndez, and J. Kouvetakis, “Toward GeSn lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature,” ECS Trans. 75(8), 163–176 (2016).
[Crossref]

H. H. Radamson, M. Noroozi, A. Jamshidi, P. E. Thompson, and M. Östling, “Strain engineering in GeSnSi materials,” ECS Trans. 50(9), 527–531 (2013).
[Crossref]

S. Essig, M. A. Steiner, C. Allebe, J. F. Geisz, B. Paviet-Salomon, S. Ward, A. Descoeudres, V. LaSalvia, L. Barraud, N. Badel, A. Faes, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, and D. L. Young, “Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency,” IEEE J. of Photovoltaics 6(4), 1012–1019 (2016).
[Crossref]

R. Roucka, J. Mathews, C. Weng, R. Beeler, J. Tolle, J. Menendez, and J. Kouvetakis, “High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon,” IEEE J. Quantum Electron. 47(2), 213–222 (2011).
[Crossref]

H. Tran, W. Du, S. A. Ghetmiri, A. Mosleh, G. Sun, R. A. Soref, J. Margetis, J. Tolle, B. Li, H. A. Naseem, and S.-Q. Yu, “Systematic study of Ge1- xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119(10), 103106 (2016).
[Crossref]

P. Moontragoon, R. Soref, and Z. Ikonic, “The direct and indirect bandgaps of unstrained SixGe1− x− ySny and their photonic device applications,” J. Appl. Phys. 112(7), 073106 (2012).
[Crossref]

A. Tonkikh, C. Eisenschmidt, V. Talalaev, N. Zakharov, J. Schilling, G. Schmidt, and P. Werner, “Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect bandgap bowing,” J. Appl. Phys. 103, 032106 (2013).

Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. A. Soref, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120(2), 023102 (2016).
[Crossref]

G. Sun, R. Soref, and H. Cheng, “Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser,” J. Appl. Phys. 108(3), 033107 (2010).
[Crossref]

J. Kouvetakis and A. V. G. Chizmeshya, “New classes of Si-based photonic materials and device architectures via designer molecular routes,” J. Mater. Chem. 17(17), 1649 (2007).
[Crossref]

A. Mosleh, M. Alher, W. Du, L. Cousar, S. Ghetmiri, S. Al-Kabi, W. Dou, P. Grant, G. Sun, R. Soref, B. Li, H. Naseem, and S. Yu, “SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system,” J. Vac. Sci. Technol. B 34(1), 011201 (2016).
[Crossref]

J. Zheng, S. Wang, T. Zhou, Y. Zuo, B. Cheng, and Q. Wang, “Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering,” Opt. Mater. Express 5(2), 287–294 (2015).
[Crossref]

S. Wirths, D. Buca, and S. Mantl, “Si–Ge–Sn alloys: From growth to applications,” Prog. Cryst. Growth Charact. Mater. 62(1), 1–39 (2016).
[Crossref]

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and applications of GeSn-related group-IV semiconductor materials,” Sci. Technol. Adv. Mater. 16(4), 043502 (2015).
[Crossref] [PubMed]

N. von den Driesch, D. Stange, S. Wirths, D. Rainko, I. Povstugar, A. Savenko, U. Breuer, R. Geiger, H. Sigg, Z. Ikonic, J.-M. Hartmann, D. Grützmacher, S. Mantl, and D. Buca, “SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters,” Small 13(16), 1603321 (2017).
[Crossref] [PubMed]

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. Hartmann, D. Grützmacher, and S. Mantl, “SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications,” Thin Solid Films 557, 183–187 (2014).
[Crossref]

R. Soref, “Emerging SiGeSn Integrated-Photonics Technology,” IEEE Photonics Society Summer Topical Meeting Series (SUM), Newport Beach, CA, 100–101 (2016).