Abstract

In this paper, we report on the fabrication and characterization of a suspended waveguide photodetector featuring p-n junction InGaN/GaN multiple quantum wells (MQWs) on a GaN-on-silicon platform. Both silicon removal and back wafer etching are conducted to achieve the suspended waveguide photodetector combination. The light illumination measurements experimentally demonstrate that the metallization stacks can serve as the bottom metal mirror to reflect the incoming light back for re-absorption, leading to an improved photocurrent response. The out-of-plane light can couple into the suspended waveguide and propagate as a confined optical mode, resulting in an induced photocurrent. The photodetector exhibits two operation modes. The peak values of the responsivity spectra for the suspended waveguide photodetector are located around 401 nm at 3 V bias and 435 nm at 0 V bias, respectively. These results pave a promising way to develop the suspended waveguide photodetector for diverse applications in the visible wavelength region.

© 2016 Optical Society of America

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  1. Z. Ren, L. Chao, X. Chen, B. Zhao, X. Wang, J. Tong, J. Zhang, X. Zhuo, D. Li, H. Yi, and S. Li, “Enhanced performance of InGaN/GaN based solar cells with an In0.05Ga0.95N ultra-thin inserting layer between GaN barrier and In0.2Ga0.8N well,” Opt. Express 21(6), 7118–7124 (2013).
    [Crossref] [PubMed]
  2. E. Munoz, E. Monroy, J. Pau, F. Calle, F. Omnes, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
    [Crossref]
  3. D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi, “Visible blind GaN pin photodiodes,” Appl. Phys. Lett. 72(25), 3303–3305 (1998).
    [Crossref]
  4. A. Asgari and S. Razi, “High performances III-Nitride Quantum Dot infrared photodetector operating at room temperature,” Opt. Express 18(14), 14604–14615 (2010).
    [Crossref] [PubMed]
  5. Y.-T. Moon, D.-J. Kim, K.-M. Song, C.-J. Choi, S.-H. Han, T.-Y. Seong, and S.-J. Park, “Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 89(11), 6514–6518 (2001).
    [Crossref]
  6. J. Roberts, C. Parker, J. Muth, S. Leboeuf, M. Aumer, S. Bedair, and M. Reed, “Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1− xN (0≤ x≤ 0.13),” J. Electron. Mater. 31(1), L1–L6 (2002).
    [Crossref]
  7. A. Dussaigne, B. Damilano, N. Grandjean, and J. Massies, “In surface segregation in InGaN/GaN quantum wells,” J. Cryst. Growth 251(1-4), 471–475 (2003).
    [Crossref]
  8. J. Pau, J. Pereiro, C. Rivera, E. Munoz, and E. Calleja, “Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications,” J. Cryst. Growth 278(1), 718–722 (2005).
    [Crossref]
  9. R. Singh, D. Doppalapudi, T. Moustakas, and L. Romano, “Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition,” Appl. Phys. Lett. 70(9), 1089–1091 (1997).
    [Crossref]
  10. S. Zhang, W. Wang, F. Yun, L. He, H. Morkoç, X. Zhou, M. Tamargo, and R. Alfano, “Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(24), 4628–4630 (2002).
    [Crossref]
  11. G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
    [Crossref]
  12. F. F. Sudradjat, W. Zhang, J. Woodward, H. Durmaz, T. D. Moustakas, and R. Paiella, “Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells,” Appl. Phys. Lett. 100(24), 241113 (2012).
    [Crossref]
  13. D. Hofstetter, S.-S. Schad, H. Wu, W. J. Schaff, and L. F. Eastman, “GaN/AlN-based quantum-well infrared photodetector for 1.55 μm,” Appl. Phys. Lett. 83(3), 572–574 (2003).
    [Crossref]
  14. A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, D. Neculoiu, E. Pavelescu, and A. Stavrinidis, “Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies,” Thin Solid Films 520(6), 2158–2161 (2012).
    [Crossref]
  15. J. Pereiro, C. Rivera, Á. Navarro, E. Muñoz, R. Czernecki, S. Grzanka, and M. Leszczynski, “Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance,” IEEE Quantum Electronics J. 45(6), 617–622 (2009).
    [Crossref]
  16. C. Rivera, J. Pau, F. Naranjo, and E. Munoz, “Novel photodetectors based on InGaN/GaN multiple quantum wells,” Physica Status Solidi (a) 201(12), 2658–2662 (2004).
    [Crossref]
  17. Z.-D. Huang, W.-Y. Weng, S.-J. Chang, Y.-F. Hua, C.-J. Chiu, T.-J. Hsueh, and S.-L. Wu, “InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-Cap Layers,” IEEE Sens. J. 13(4), 1187–1191 (2013).
    [Crossref]
  18. S. Kim, G. P. Nordin, J. Cai, and J. Jiang, “Ultracompact high-efficiency polarizing beam splitter with a hybrid photonic crystal and conventional waveguide structure,” Opt. Lett. 28(23), 2384–2386 (2003).
    [Crossref] [PubMed]
  19. A. Y. Piggott, J. Lu, K. G. Lagoudakis, J. Petykiewicz, T. M. Babinec, and J. Vuckovic, “Inverse design and demonstration of a compact and broadband on-chip wavelength demultiplexer,” Nat. Photonics 9(6), 374–377 (2015).
    [Crossref]
  20. R. Hui, S. Taherion, Y. Wan, J. Li, S. Jin, J. Lin, and H. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett. 82(9), 1326–1328 (2003).
    [Crossref]
  21. X. Li, G. Zhu, X. Gao, D. Bai, X. Huang, X. Cao, H. Zhu, K. Hane, and Y. Wang, “Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality,” IEEE Photonics J. 7(6), 1–7 (2015).
  22. D. Bai, T. Wu, X. Li, X. Gao, Y. Xu, Z. Cao, H. Zhu, and Y. Wang, “Suspended GaN-based nanostructure for integrated optics,” Appl. Phys. B 122(9), 1–7 (2016).
    [Crossref]
  23. D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
    [Crossref]
  24. Y. Wang, G. Zhu, W. Cai, X. Gao, Y. Yang, J. Yuan, Z. Shi, and H. Zhu, “On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides,” Appl. Phys. Lett. 108(16), 162102 (2016).
    [Crossref]
  25. J. Yuan, W. Cai, X. Gao, G. Zhu, D. Bai, H. Zhu, and Y. Wang, “Monolithic integration of a suspended light-emitting diode with a Y-branch structure,” Appl. Phys. Express 9(3), 032202 (2016).
    [Crossref]
  26. X. Zhang, Y. F. Cheung, Y. Zhang, and H. W. Choi, “Whispering-gallery mode lasing from optically free-standing InGaN microdisks,” Opt. Lett. 39(19), 5614–5617 (2014).
    [Crossref] [PubMed]
  27. Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
    [Crossref]
  28. W. Cai, X. M. Gao, W. Yuan, Y. C. Yang, J. L. Yuan, H. B. Zhu, and Y. J. Wang, “Integrated p-n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities,” Appl. Phys. Express 9(5), 052204 (2016).
    [Crossref]
  29. W. Cai, Y. Yang, X. Gao, J. Yuan, W. Yuan, H. Zhu, and Y. Wang, “On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities,” Opt. Express 24(6), 6004–6010 (2016).
    [Crossref] [PubMed]

2016 (6)

D. Bai, T. Wu, X. Li, X. Gao, Y. Xu, Z. Cao, H. Zhu, and Y. Wang, “Suspended GaN-based nanostructure for integrated optics,” Appl. Phys. B 122(9), 1–7 (2016).
[Crossref]

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

Y. Wang, G. Zhu, W. Cai, X. Gao, Y. Yang, J. Yuan, Z. Shi, and H. Zhu, “On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides,” Appl. Phys. Lett. 108(16), 162102 (2016).
[Crossref]

J. Yuan, W. Cai, X. Gao, G. Zhu, D. Bai, H. Zhu, and Y. Wang, “Monolithic integration of a suspended light-emitting diode with a Y-branch structure,” Appl. Phys. Express 9(3), 032202 (2016).
[Crossref]

W. Cai, X. M. Gao, W. Yuan, Y. C. Yang, J. L. Yuan, H. B. Zhu, and Y. J. Wang, “Integrated p-n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities,” Appl. Phys. Express 9(5), 052204 (2016).
[Crossref]

W. Cai, Y. Yang, X. Gao, J. Yuan, W. Yuan, H. Zhu, and Y. Wang, “On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities,” Opt. Express 24(6), 6004–6010 (2016).
[Crossref] [PubMed]

2015 (2)

A. Y. Piggott, J. Lu, K. G. Lagoudakis, J. Petykiewicz, T. M. Babinec, and J. Vuckovic, “Inverse design and demonstration of a compact and broadband on-chip wavelength demultiplexer,” Nat. Photonics 9(6), 374–377 (2015).
[Crossref]

X. Li, G. Zhu, X. Gao, D. Bai, X. Huang, X. Cao, H. Zhu, K. Hane, and Y. Wang, “Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality,” IEEE Photonics J. 7(6), 1–7 (2015).

2014 (2)

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
[Crossref]

X. Zhang, Y. F. Cheung, Y. Zhang, and H. W. Choi, “Whispering-gallery mode lasing from optically free-standing InGaN microdisks,” Opt. Lett. 39(19), 5614–5617 (2014).
[Crossref] [PubMed]

2013 (2)

Z. Ren, L. Chao, X. Chen, B. Zhao, X. Wang, J. Tong, J. Zhang, X. Zhuo, D. Li, H. Yi, and S. Li, “Enhanced performance of InGaN/GaN based solar cells with an In0.05Ga0.95N ultra-thin inserting layer between GaN barrier and In0.2Ga0.8N well,” Opt. Express 21(6), 7118–7124 (2013).
[Crossref] [PubMed]

Z.-D. Huang, W.-Y. Weng, S.-J. Chang, Y.-F. Hua, C.-J. Chiu, T.-J. Hsueh, and S.-L. Wu, “InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-Cap Layers,” IEEE Sens. J. 13(4), 1187–1191 (2013).
[Crossref]

2012 (2)

A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, D. Neculoiu, E. Pavelescu, and A. Stavrinidis, “Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies,” Thin Solid Films 520(6), 2158–2161 (2012).
[Crossref]

F. F. Sudradjat, W. Zhang, J. Woodward, H. Durmaz, T. D. Moustakas, and R. Paiella, “Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells,” Appl. Phys. Lett. 100(24), 241113 (2012).
[Crossref]

2010 (1)

2009 (1)

J. Pereiro, C. Rivera, Á. Navarro, E. Muñoz, R. Czernecki, S. Grzanka, and M. Leszczynski, “Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance,” IEEE Quantum Electronics J. 45(6), 617–622 (2009).
[Crossref]

2005 (1)

J. Pau, J. Pereiro, C. Rivera, E. Munoz, and E. Calleja, “Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications,” J. Cryst. Growth 278(1), 718–722 (2005).
[Crossref]

2003 (4)

D. Hofstetter, S.-S. Schad, H. Wu, W. J. Schaff, and L. F. Eastman, “GaN/AlN-based quantum-well infrared photodetector for 1.55 μm,” Appl. Phys. Lett. 83(3), 572–574 (2003).
[Crossref]

A. Dussaigne, B. Damilano, N. Grandjean, and J. Massies, “In surface segregation in InGaN/GaN quantum wells,” J. Cryst. Growth 251(1-4), 471–475 (2003).
[Crossref]

S. Kim, G. P. Nordin, J. Cai, and J. Jiang, “Ultracompact high-efficiency polarizing beam splitter with a hybrid photonic crystal and conventional waveguide structure,” Opt. Lett. 28(23), 2384–2386 (2003).
[Crossref] [PubMed]

R. Hui, S. Taherion, Y. Wan, J. Li, S. Jin, J. Lin, and H. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett. 82(9), 1326–1328 (2003).
[Crossref]

2002 (2)

S. Zhang, W. Wang, F. Yun, L. He, H. Morkoç, X. Zhou, M. Tamargo, and R. Alfano, “Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(24), 4628–4630 (2002).
[Crossref]

J. Roberts, C. Parker, J. Muth, S. Leboeuf, M. Aumer, S. Bedair, and M. Reed, “Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1− xN (0≤ x≤ 0.13),” J. Electron. Mater. 31(1), L1–L6 (2002).
[Crossref]

2001 (2)

Y.-T. Moon, D.-J. Kim, K.-M. Song, C.-J. Choi, S.-H. Han, T.-Y. Seong, and S.-J. Park, “Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 89(11), 6514–6518 (2001).
[Crossref]

E. Munoz, E. Monroy, J. Pau, F. Calle, F. Omnes, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

1998 (1)

D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi, “Visible blind GaN pin photodiodes,” Appl. Phys. Lett. 72(25), 3303–3305 (1998).
[Crossref]

1997 (2)

R. Singh, D. Doppalapudi, T. Moustakas, and L. Romano, “Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition,” Appl. Phys. Lett. 70(9), 1089–1091 (1997).
[Crossref]

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Alfano, R.

S. Zhang, W. Wang, F. Yun, L. He, H. Morkoç, X. Zhou, M. Tamargo, and R. Alfano, “Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(24), 4628–4630 (2002).
[Crossref]

Androulidaki, M.

A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, D. Neculoiu, E. Pavelescu, and A. Stavrinidis, “Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies,” Thin Solid Films 520(6), 2158–2161 (2012).
[Crossref]

Asgari, A.

Aumer, M.

J. Roberts, C. Parker, J. Muth, S. Leboeuf, M. Aumer, S. Bedair, and M. Reed, “Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1− xN (0≤ x≤ 0.13),” J. Electron. Mater. 31(1), L1–L6 (2002).
[Crossref]

Babinec, T. M.

A. Y. Piggott, J. Lu, K. G. Lagoudakis, J. Petykiewicz, T. M. Babinec, and J. Vuckovic, “Inverse design and demonstration of a compact and broadband on-chip wavelength demultiplexer,” Nat. Photonics 9(6), 374–377 (2015).
[Crossref]

Bai, D.

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

J. Yuan, W. Cai, X. Gao, G. Zhu, D. Bai, H. Zhu, and Y. Wang, “Monolithic integration of a suspended light-emitting diode with a Y-branch structure,” Appl. Phys. Express 9(3), 032202 (2016).
[Crossref]

D. Bai, T. Wu, X. Li, X. Gao, Y. Xu, Z. Cao, H. Zhu, and Y. Wang, “Suspended GaN-based nanostructure for integrated optics,” Appl. Phys. B 122(9), 1–7 (2016).
[Crossref]

X. Li, G. Zhu, X. Gao, D. Bai, X. Huang, X. Cao, H. Zhu, K. Hane, and Y. Wang, “Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality,” IEEE Photonics J. 7(6), 1–7 (2015).

Bedair, S.

J. Roberts, C. Parker, J. Muth, S. Leboeuf, M. Aumer, S. Bedair, and M. Reed, “Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1− xN (0≤ x≤ 0.13),” J. Electron. Mater. 31(1), L1–L6 (2002).
[Crossref]

Cai, J.

Cai, W.

J. Yuan, W. Cai, X. Gao, G. Zhu, D. Bai, H. Zhu, and Y. Wang, “Monolithic integration of a suspended light-emitting diode with a Y-branch structure,” Appl. Phys. Express 9(3), 032202 (2016).
[Crossref]

W. Cai, X. M. Gao, W. Yuan, Y. C. Yang, J. L. Yuan, H. B. Zhu, and Y. J. Wang, “Integrated p-n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities,” Appl. Phys. Express 9(5), 052204 (2016).
[Crossref]

W. Cai, Y. Yang, X. Gao, J. Yuan, W. Yuan, H. Zhu, and Y. Wang, “On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities,” Opt. Express 24(6), 6004–6010 (2016).
[Crossref] [PubMed]

Y. Wang, G. Zhu, W. Cai, X. Gao, Y. Yang, J. Yuan, Z. Shi, and H. Zhu, “On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides,” Appl. Phys. Lett. 108(16), 162102 (2016).
[Crossref]

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

Calle, F.

E. Munoz, E. Monroy, J. Pau, F. Calle, F. Omnes, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Calleja, E.

J. Pau, J. Pereiro, C. Rivera, E. Munoz, and E. Calleja, “Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications,” J. Cryst. Growth 278(1), 718–722 (2005).
[Crossref]

Cao, X.

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

X. Li, G. Zhu, X. Gao, D. Bai, X. Huang, X. Cao, H. Zhu, K. Hane, and Y. Wang, “Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality,” IEEE Photonics J. 7(6), 1–7 (2015).

Cao, Z.

D. Bai, T. Wu, X. Li, X. Gao, Y. Xu, Z. Cao, H. Zhu, and Y. Wang, “Suspended GaN-based nanostructure for integrated optics,” Appl. Phys. B 122(9), 1–7 (2016).
[Crossref]

Chang, S.-J.

Z.-D. Huang, W.-Y. Weng, S.-J. Chang, Y.-F. Hua, C.-J. Chiu, T.-J. Hsueh, and S.-L. Wu, “InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-Cap Layers,” IEEE Sens. J. 13(4), 1187–1191 (2013).
[Crossref]

Chao, L.

Chen, J.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
[Crossref]

Chen, L.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
[Crossref]

Chen, X.

Cheung, Y. F.

Chiu, C.-J.

Z.-D. Huang, W.-Y. Weng, S.-J. Chang, Y.-F. Hua, C.-J. Chiu, T.-J. Hsueh, and S.-L. Wu, “InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-Cap Layers,” IEEE Sens. J. 13(4), 1187–1191 (2013).
[Crossref]

Choi, C.-J.

Y.-T. Moon, D.-J. Kim, K.-M. Song, C.-J. Choi, S.-H. Han, T.-Y. Seong, and S.-J. Park, “Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 89(11), 6514–6518 (2001).
[Crossref]

Choi, H. W.

Cismaru, A.

A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, D. Neculoiu, E. Pavelescu, and A. Stavrinidis, “Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies,” Thin Solid Films 520(6), 2158–2161 (2012).
[Crossref]

Cryan, M.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
[Crossref]

Czernecki, R.

J. Pereiro, C. Rivera, Á. Navarro, E. Muñoz, R. Czernecki, S. Grzanka, and M. Leszczynski, “Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance,” IEEE Quantum Electronics J. 45(6), 617–622 (2009).
[Crossref]

Damilano, B.

A. Dussaigne, B. Damilano, N. Grandjean, and J. Massies, “In surface segregation in InGaN/GaN quantum wells,” J. Cryst. Growth 251(1-4), 471–475 (2003).
[Crossref]

Diaz, J.

D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi, “Visible blind GaN pin photodiodes,” Appl. Phys. Lett. 72(25), 3303–3305 (1998).
[Crossref]

Dinescu, A.

A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, D. Neculoiu, E. Pavelescu, and A. Stavrinidis, “Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies,” Thin Solid Films 520(6), 2158–2161 (2012).
[Crossref]

Doppalapudi, D.

R. Singh, D. Doppalapudi, T. Moustakas, and L. Romano, “Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition,” Appl. Phys. Lett. 70(9), 1089–1091 (1997).
[Crossref]

Durmaz, H.

F. F. Sudradjat, W. Zhang, J. Woodward, H. Durmaz, T. D. Moustakas, and R. Paiella, “Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells,” Appl. Phys. Lett. 100(24), 241113 (2012).
[Crossref]

Dussaigne, A.

A. Dussaigne, B. Damilano, N. Grandjean, and J. Massies, “In surface segregation in InGaN/GaN quantum wells,” J. Cryst. Growth 251(1-4), 471–475 (2003).
[Crossref]

Eastman, L. F.

D. Hofstetter, S.-S. Schad, H. Wu, W. J. Schaff, and L. F. Eastman, “GaN/AlN-based quantum-well infrared photodetector for 1.55 μm,” Appl. Phys. Lett. 83(3), 572–574 (2003).
[Crossref]

Estes, M.

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Fan, Z.

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Gao, X.

W. Cai, Y. Yang, X. Gao, J. Yuan, W. Yuan, H. Zhu, and Y. Wang, “On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities,” Opt. Express 24(6), 6004–6010 (2016).
[Crossref] [PubMed]

J. Yuan, W. Cai, X. Gao, G. Zhu, D. Bai, H. Zhu, and Y. Wang, “Monolithic integration of a suspended light-emitting diode with a Y-branch structure,” Appl. Phys. Express 9(3), 032202 (2016).
[Crossref]

D. Bai, T. Wu, X. Li, X. Gao, Y. Xu, Z. Cao, H. Zhu, and Y. Wang, “Suspended GaN-based nanostructure for integrated optics,” Appl. Phys. B 122(9), 1–7 (2016).
[Crossref]

Y. Wang, G. Zhu, W. Cai, X. Gao, Y. Yang, J. Yuan, Z. Shi, and H. Zhu, “On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides,” Appl. Phys. Lett. 108(16), 162102 (2016).
[Crossref]

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

X. Li, G. Zhu, X. Gao, D. Bai, X. Huang, X. Cao, H. Zhu, K. Hane, and Y. Wang, “Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality,” IEEE Photonics J. 7(6), 1–7 (2015).

Gao, X. M.

W. Cai, X. M. Gao, W. Yuan, Y. C. Yang, J. L. Yuan, H. B. Zhu, and Y. J. Wang, “Integrated p-n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities,” Appl. Phys. Express 9(5), 052204 (2016).
[Crossref]

Garcia, M. L.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
[Crossref]

Gibart, P.

E. Munoz, E. Monroy, J. Pau, F. Calle, F. Omnes, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Goldenberg, B.

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Grandjean, N.

A. Dussaigne, B. Damilano, N. Grandjean, and J. Massies, “In surface segregation in InGaN/GaN quantum wells,” J. Cryst. Growth 251(1-4), 471–475 (2003).
[Crossref]

Grzanka, S.

J. Pereiro, C. Rivera, Á. Navarro, E. Muñoz, R. Czernecki, S. Grzanka, and M. Leszczynski, “Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance,” IEEE Quantum Electronics J. 45(6), 617–622 (2009).
[Crossref]

Hamilton, M.

D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi, “Visible blind GaN pin photodiodes,” Appl. Phys. Lett. 72(25), 3303–3305 (1998).
[Crossref]

Han, S.-H.

Y.-T. Moon, D.-J. Kim, K.-M. Song, C.-J. Choi, S.-H. Han, T.-Y. Seong, and S.-J. Park, “Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 89(11), 6514–6518 (2001).
[Crossref]

Hane, K.

X. Li, G. Zhu, X. Gao, D. Bai, X. Huang, X. Cao, H. Zhu, K. Hane, and Y. Wang, “Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality,” IEEE Photonics J. 7(6), 1–7 (2015).

He, L.

S. Zhang, W. Wang, F. Yun, L. He, H. Morkoç, X. Zhou, M. Tamargo, and R. Alfano, “Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(24), 4628–4630 (2002).
[Crossref]

He, S.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
[Crossref]

Hofstetter, D.

D. Hofstetter, S.-S. Schad, H. Wu, W. J. Schaff, and L. F. Eastman, “GaN/AlN-based quantum-well infrared photodetector for 1.55 μm,” Appl. Phys. Lett. 83(3), 572–574 (2003).
[Crossref]

Hsueh, T.-J.

Z.-D. Huang, W.-Y. Weng, S.-J. Chang, Y.-F. Hua, C.-J. Chiu, T.-J. Hsueh, and S.-L. Wu, “InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-Cap Layers,” IEEE Sens. J. 13(4), 1187–1191 (2013).
[Crossref]

Hua, Y.-F.

Z.-D. Huang, W.-Y. Weng, S.-J. Chang, Y.-F. Hua, C.-J. Chiu, T.-J. Hsueh, and S.-L. Wu, “InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-Cap Layers,” IEEE Sens. J. 13(4), 1187–1191 (2013).
[Crossref]

Huang, X.

X. Li, G. Zhu, X. Gao, D. Bai, X. Huang, X. Cao, H. Zhu, K. Hane, and Y. Wang, “Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality,” IEEE Photonics J. 7(6), 1–7 (2015).

Huang, Z.-D.

Z.-D. Huang, W.-Y. Weng, S.-J. Chang, Y.-F. Hua, C.-J. Chiu, T.-J. Hsueh, and S.-L. Wu, “InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-Cap Layers,” IEEE Sens. J. 13(4), 1187–1191 (2013).
[Crossref]

Hueting, N. A.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
[Crossref]

Hui, R.

R. Hui, S. Taherion, Y. Wan, J. Li, S. Jin, J. Lin, and H. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett. 82(9), 1326–1328 (2003).
[Crossref]

Jiang, H.

R. Hui, S. Taherion, Y. Wan, J. Li, S. Jin, J. Lin, and H. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett. 82(9), 1326–1328 (2003).
[Crossref]

Jiang, J.

Jin, S.

R. Hui, S. Taherion, Y. Wan, J. Li, S. Jin, J. Lin, and H. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett. 82(9), 1326–1328 (2003).
[Crossref]

Kim, D.-J.

Y.-T. Moon, D.-J. Kim, K.-M. Song, C.-J. Choi, S.-H. Han, T.-Y. Seong, and S.-J. Park, “Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 89(11), 6514–6518 (2001).
[Crossref]

Kim, S.

Kim, W.

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Konstantinidis, G.

A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, D. Neculoiu, E. Pavelescu, and A. Stavrinidis, “Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies,” Thin Solid Films 520(6), 2158–2161 (2012).
[Crossref]

Krishnankutty, S.

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Kung, P.

D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi, “Visible blind GaN pin photodiodes,” Appl. Phys. Lett. 72(25), 3303–3305 (1998).
[Crossref]

Lagoudakis, K. G.

A. Y. Piggott, J. Lu, K. G. Lagoudakis, J. Petykiewicz, T. M. Babinec, and J. Vuckovic, “Inverse design and demonstration of a compact and broadband on-chip wavelength demultiplexer,” Nat. Photonics 9(6), 374–377 (2015).
[Crossref]

Leboeuf, S.

J. Roberts, C. Parker, J. Muth, S. Leboeuf, M. Aumer, S. Bedair, and M. Reed, “Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1− xN (0≤ x≤ 0.13),” J. Electron. Mater. 31(1), L1–L6 (2002).
[Crossref]

Leszczynski, M.

J. Pereiro, C. Rivera, Á. Navarro, E. Muñoz, R. Czernecki, S. Grzanka, and M. Leszczynski, “Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance,” IEEE Quantum Electronics J. 45(6), 617–622 (2009).
[Crossref]

Li, D.

Li, J.

R. Hui, S. Taherion, Y. Wan, J. Li, S. Jin, J. Lin, and H. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett. 82(9), 1326–1328 (2003).
[Crossref]

Li, S.

Li, X.

D. Bai, T. Wu, X. Li, X. Gao, Y. Xu, Z. Cao, H. Zhu, and Y. Wang, “Suspended GaN-based nanostructure for integrated optics,” Appl. Phys. B 122(9), 1–7 (2016).
[Crossref]

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

X. Li, G. Zhu, X. Gao, D. Bai, X. Huang, X. Cao, H. Zhu, K. Hane, and Y. Wang, “Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality,” IEEE Photonics J. 7(6), 1–7 (2015).

Lin, J.

R. Hui, S. Taherion, Y. Wan, J. Li, S. Jin, J. Lin, and H. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett. 82(9), 1326–1328 (2003).
[Crossref]

Lu, C.

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Lu, J.

A. Y. Piggott, J. Lu, K. G. Lagoudakis, J. Petykiewicz, T. M. Babinec, and J. Vuckovic, “Inverse design and demonstration of a compact and broadband on-chip wavelength demultiplexer,” Nat. Photonics 9(6), 374–377 (2015).
[Crossref]

Massies, J.

A. Dussaigne, B. Damilano, N. Grandjean, and J. Massies, “In surface segregation in InGaN/GaN quantum wells,” J. Cryst. Growth 251(1-4), 471–475 (2003).
[Crossref]

Monroy, E.

E. Munoz, E. Monroy, J. Pau, F. Calle, F. Omnes, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Moon, Y.-T.

Y.-T. Moon, D.-J. Kim, K.-M. Song, C.-J. Choi, S.-H. Han, T.-Y. Seong, and S.-J. Park, “Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 89(11), 6514–6518 (2001).
[Crossref]

Morkoç, H.

S. Zhang, W. Wang, F. Yun, L. He, H. Morkoç, X. Zhou, M. Tamargo, and R. Alfano, “Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(24), 4628–4630 (2002).
[Crossref]

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Moustakas, T.

R. Singh, D. Doppalapudi, T. Moustakas, and L. Romano, “Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition,” Appl. Phys. Lett. 70(9), 1089–1091 (1997).
[Crossref]

Moustakas, T. D.

F. F. Sudradjat, W. Zhang, J. Woodward, H. Durmaz, T. D. Moustakas, and R. Paiella, “Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells,” Appl. Phys. Lett. 100(24), 241113 (2012).
[Crossref]

Müller, A.

A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, D. Neculoiu, E. Pavelescu, and A. Stavrinidis, “Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies,” Thin Solid Films 520(6), 2158–2161 (2012).
[Crossref]

Munoz, E.

J. Pau, J. Pereiro, C. Rivera, E. Munoz, and E. Calleja, “Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications,” J. Cryst. Growth 278(1), 718–722 (2005).
[Crossref]

E. Munoz, E. Monroy, J. Pau, F. Calle, F. Omnes, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Muñoz, E.

J. Pereiro, C. Rivera, Á. Navarro, E. Muñoz, R. Czernecki, S. Grzanka, and M. Leszczynski, “Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance,” IEEE Quantum Electronics J. 45(6), 617–622 (2009).
[Crossref]

Muth, J.

J. Roberts, C. Parker, J. Muth, S. Leboeuf, M. Aumer, S. Bedair, and M. Reed, “Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1− xN (0≤ x≤ 0.13),” J. Electron. Mater. 31(1), L1–L6 (2002).
[Crossref]

Navarro, Á.

J. Pereiro, C. Rivera, Á. Navarro, E. Muñoz, R. Czernecki, S. Grzanka, and M. Leszczynski, “Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance,” IEEE Quantum Electronics J. 45(6), 617–622 (2009).
[Crossref]

Neculoiu, D.

A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, D. Neculoiu, E. Pavelescu, and A. Stavrinidis, “Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies,” Thin Solid Films 520(6), 2158–2161 (2012).
[Crossref]

Nordin, G. P.

Omnes, F.

E. Munoz, E. Monroy, J. Pau, F. Calle, F. Omnes, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Paiella, R.

F. F. Sudradjat, W. Zhang, J. Woodward, H. Durmaz, T. D. Moustakas, and R. Paiella, “Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells,” Appl. Phys. Lett. 100(24), 241113 (2012).
[Crossref]

Park, S.-J.

Y.-T. Moon, D.-J. Kim, K.-M. Song, C.-J. Choi, S.-H. Han, T.-Y. Seong, and S.-J. Park, “Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 89(11), 6514–6518 (2001).
[Crossref]

Parker, C.

J. Roberts, C. Parker, J. Muth, S. Leboeuf, M. Aumer, S. Bedair, and M. Reed, “Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1− xN (0≤ x≤ 0.13),” J. Electron. Mater. 31(1), L1–L6 (2002).
[Crossref]

Pau, J.

J. Pau, J. Pereiro, C. Rivera, E. Munoz, and E. Calleja, “Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications,” J. Cryst. Growth 278(1), 718–722 (2005).
[Crossref]

E. Munoz, E. Monroy, J. Pau, F. Calle, F. Omnes, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Pavelescu, E.

A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, D. Neculoiu, E. Pavelescu, and A. Stavrinidis, “Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies,” Thin Solid Films 520(6), 2158–2161 (2012).
[Crossref]

Pereiro, J.

J. Pereiro, C. Rivera, Á. Navarro, E. Muñoz, R. Czernecki, S. Grzanka, and M. Leszczynski, “Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance,” IEEE Quantum Electronics J. 45(6), 617–622 (2009).
[Crossref]

J. Pau, J. Pereiro, C. Rivera, E. Munoz, and E. Calleja, “Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications,” J. Cryst. Growth 278(1), 718–722 (2005).
[Crossref]

Petykiewicz, J.

A. Y. Piggott, J. Lu, K. G. Lagoudakis, J. Petykiewicz, T. M. Babinec, and J. Vuckovic, “Inverse design and demonstration of a compact and broadband on-chip wavelength demultiplexer,” Nat. Photonics 9(6), 374–377 (2015).
[Crossref]

Piggott, A. Y.

A. Y. Piggott, J. Lu, K. G. Lagoudakis, J. Petykiewicz, T. M. Babinec, and J. Vuckovic, “Inverse design and demonstration of a compact and broadband on-chip wavelength demultiplexer,” Nat. Photonics 9(6), 374–377 (2015).
[Crossref]

Razeghi, M.

D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi, “Visible blind GaN pin photodiodes,” Appl. Phys. Lett. 72(25), 3303–3305 (1998).
[Crossref]

Razi, S.

Reed, M.

J. Roberts, C. Parker, J. Muth, S. Leboeuf, M. Aumer, S. Bedair, and M. Reed, “Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1− xN (0≤ x≤ 0.13),” J. Electron. Mater. 31(1), L1–L6 (2002).
[Crossref]

Ren, Z.

Rivera, C.

J. Pereiro, C. Rivera, Á. Navarro, E. Muñoz, R. Czernecki, S. Grzanka, and M. Leszczynski, “Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance,” IEEE Quantum Electronics J. 45(6), 617–622 (2009).
[Crossref]

J. Pau, J. Pereiro, C. Rivera, E. Munoz, and E. Calleja, “Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications,” J. Cryst. Growth 278(1), 718–722 (2005).
[Crossref]

Roberts, J.

J. Roberts, C. Parker, J. Muth, S. Leboeuf, M. Aumer, S. Bedair, and M. Reed, “Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1− xN (0≤ x≤ 0.13),” J. Electron. Mater. 31(1), L1–L6 (2002).
[Crossref]

Romano, L.

R. Singh, D. Doppalapudi, T. Moustakas, and L. Romano, “Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition,” Appl. Phys. Lett. 70(9), 1089–1091 (1997).
[Crossref]

Salvador, A.

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Saxler, A.

D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi, “Visible blind GaN pin photodiodes,” Appl. Phys. Lett. 72(25), 3303–3305 (1998).
[Crossref]

Schad, S.-S.

D. Hofstetter, S.-S. Schad, H. Wu, W. J. Schaff, and L. F. Eastman, “GaN/AlN-based quantum-well infrared photodetector for 1.55 μm,” Appl. Phys. Lett. 83(3), 572–574 (2003).
[Crossref]

Schaff, W. J.

D. Hofstetter, S.-S. Schad, H. Wu, W. J. Schaff, and L. F. Eastman, “GaN/AlN-based quantum-well infrared photodetector for 1.55 μm,” Appl. Phys. Lett. 83(3), 572–574 (2003).
[Crossref]

Seong, T.-Y.

Y.-T. Moon, D.-J. Kim, K.-M. Song, C.-J. Choi, S.-H. Han, T.-Y. Seong, and S.-J. Park, “Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 89(11), 6514–6518 (2001).
[Crossref]

Shi, Z.

Y. Wang, G. Zhu, W. Cai, X. Gao, Y. Yang, J. Yuan, Z. Shi, and H. Zhu, “On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides,” Appl. Phys. Lett. 108(16), 162102 (2016).
[Crossref]

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
[Crossref]

Singh, R.

R. Singh, D. Doppalapudi, T. Moustakas, and L. Romano, “Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition,” Appl. Phys. Lett. 70(9), 1089–1091 (1997).
[Crossref]

Smith, G.

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Song, K.-M.

Y.-T. Moon, D.-J. Kim, K.-M. Song, C.-J. Choi, S.-H. Han, T.-Y. Seong, and S.-J. Park, “Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 89(11), 6514–6518 (2001).
[Crossref]

Stavrinidis, A.

A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, D. Neculoiu, E. Pavelescu, and A. Stavrinidis, “Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies,” Thin Solid Films 520(6), 2158–2161 (2012).
[Crossref]

Stefanescu, A.

A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, D. Neculoiu, E. Pavelescu, and A. Stavrinidis, “Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies,” Thin Solid Films 520(6), 2158–2161 (2012).
[Crossref]

Sudradjat, F. F.

F. F. Sudradjat, W. Zhang, J. Woodward, H. Durmaz, T. D. Moustakas, and R. Paiella, “Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells,” Appl. Phys. Lett. 100(24), 241113 (2012).
[Crossref]

Taherion, S.

R. Hui, S. Taherion, Y. Wan, J. Li, S. Jin, J. Lin, and H. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett. 82(9), 1326–1328 (2003).
[Crossref]

Tamargo, M.

S. Zhang, W. Wang, F. Yun, L. He, H. Morkoç, X. Zhou, M. Tamargo, and R. Alfano, “Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(24), 4628–4630 (2002).
[Crossref]

Tang, H.

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Tong, J.

Vuckovic, J.

A. Y. Piggott, J. Lu, K. G. Lagoudakis, J. Petykiewicz, T. M. Babinec, and J. Vuckovic, “Inverse design and demonstration of a compact and broadband on-chip wavelength demultiplexer,” Nat. Photonics 9(6), 374–377 (2015).
[Crossref]

Walker, D.

D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi, “Visible blind GaN pin photodiodes,” Appl. Phys. Lett. 72(25), 3303–3305 (1998).
[Crossref]

Wan, Y.

R. Hui, S. Taherion, Y. Wan, J. Li, S. Jin, J. Lin, and H. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett. 82(9), 1326–1328 (2003).
[Crossref]

Wang, W.

S. Zhang, W. Wang, F. Yun, L. He, H. Morkoç, X. Zhou, M. Tamargo, and R. Alfano, “Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(24), 4628–4630 (2002).
[Crossref]

Wang, X.

Wang, Y.

Y. Wang, G. Zhu, W. Cai, X. Gao, Y. Yang, J. Yuan, Z. Shi, and H. Zhu, “On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides,” Appl. Phys. Lett. 108(16), 162102 (2016).
[Crossref]

D. Bai, T. Wu, X. Li, X. Gao, Y. Xu, Z. Cao, H. Zhu, and Y. Wang, “Suspended GaN-based nanostructure for integrated optics,” Appl. Phys. B 122(9), 1–7 (2016).
[Crossref]

W. Cai, Y. Yang, X. Gao, J. Yuan, W. Yuan, H. Zhu, and Y. Wang, “On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities,” Opt. Express 24(6), 6004–6010 (2016).
[Crossref] [PubMed]

J. Yuan, W. Cai, X. Gao, G. Zhu, D. Bai, H. Zhu, and Y. Wang, “Monolithic integration of a suspended light-emitting diode with a Y-branch structure,” Appl. Phys. Express 9(3), 032202 (2016).
[Crossref]

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

X. Li, G. Zhu, X. Gao, D. Bai, X. Huang, X. Cao, H. Zhu, K. Hane, and Y. Wang, “Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality,” IEEE Photonics J. 7(6), 1–7 (2015).

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
[Crossref]

Wang, Y. J.

W. Cai, X. M. Gao, W. Yuan, Y. C. Yang, J. L. Yuan, H. B. Zhu, and Y. J. Wang, “Integrated p-n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities,” Appl. Phys. Express 9(5), 052204 (2016).
[Crossref]

Weng, W.-Y.

Z.-D. Huang, W.-Y. Weng, S.-J. Chang, Y.-F. Hua, C.-J. Chiu, T.-J. Hsueh, and S.-L. Wu, “InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-Cap Layers,” IEEE Sens. J. 13(4), 1187–1191 (2013).
[Crossref]

Woodward, J.

F. F. Sudradjat, W. Zhang, J. Woodward, H. Durmaz, T. D. Moustakas, and R. Paiella, “Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells,” Appl. Phys. Lett. 100(24), 241113 (2012).
[Crossref]

Wu, H.

D. Hofstetter, S.-S. Schad, H. Wu, W. J. Schaff, and L. F. Eastman, “GaN/AlN-based quantum-well infrared photodetector for 1.55 μm,” Appl. Phys. Lett. 83(3), 572–574 (2003).
[Crossref]

Wu, S.-L.

Z.-D. Huang, W.-Y. Weng, S.-J. Chang, Y.-F. Hua, C.-J. Chiu, T.-J. Hsueh, and S.-L. Wu, “InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-Cap Layers,” IEEE Sens. J. 13(4), 1187–1191 (2013).
[Crossref]

Wu, T.

D. Bai, T. Wu, X. Li, X. Gao, Y. Xu, Z. Cao, H. Zhu, and Y. Wang, “Suspended GaN-based nanostructure for integrated optics,” Appl. Phys. B 122(9), 1–7 (2016).
[Crossref]

Xu, G.

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Xu, Y.

D. Bai, T. Wu, X. Li, X. Gao, Y. Xu, Z. Cao, H. Zhu, and Y. Wang, “Suspended GaN-based nanostructure for integrated optics,” Appl. Phys. B 122(9), 1–7 (2016).
[Crossref]

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

Yang, C.

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

Yang, W.

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

Yang, Y.

W. Cai, Y. Yang, X. Gao, J. Yuan, W. Yuan, H. Zhu, and Y. Wang, “On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities,” Opt. Express 24(6), 6004–6010 (2016).
[Crossref] [PubMed]

Y. Wang, G. Zhu, W. Cai, X. Gao, Y. Yang, J. Yuan, Z. Shi, and H. Zhu, “On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides,” Appl. Phys. Lett. 108(16), 162102 (2016).
[Crossref]

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

Yang, Y. C.

W. Cai, X. M. Gao, W. Yuan, Y. C. Yang, J. L. Yuan, H. B. Zhu, and Y. J. Wang, “Integrated p-n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities,” Appl. Phys. Express 9(5), 052204 (2016).
[Crossref]

Yi, H.

Yuan, J.

Y. Wang, G. Zhu, W. Cai, X. Gao, Y. Yang, J. Yuan, Z. Shi, and H. Zhu, “On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides,” Appl. Phys. Lett. 108(16), 162102 (2016).
[Crossref]

W. Cai, Y. Yang, X. Gao, J. Yuan, W. Yuan, H. Zhu, and Y. Wang, “On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities,” Opt. Express 24(6), 6004–6010 (2016).
[Crossref] [PubMed]

J. Yuan, W. Cai, X. Gao, G. Zhu, D. Bai, H. Zhu, and Y. Wang, “Monolithic integration of a suspended light-emitting diode with a Y-branch structure,” Appl. Phys. Express 9(3), 032202 (2016).
[Crossref]

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

Yuan, J. L.

W. Cai, X. M. Gao, W. Yuan, Y. C. Yang, J. L. Yuan, H. B. Zhu, and Y. J. Wang, “Integrated p-n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities,” Appl. Phys. Express 9(5), 052204 (2016).
[Crossref]

Yuan, W.

W. Cai, X. M. Gao, W. Yuan, Y. C. Yang, J. L. Yuan, H. B. Zhu, and Y. J. Wang, “Integrated p-n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities,” Appl. Phys. Express 9(5), 052204 (2016).
[Crossref]

W. Cai, Y. Yang, X. Gao, J. Yuan, W. Yuan, H. Zhu, and Y. Wang, “On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities,” Opt. Express 24(6), 6004–6010 (2016).
[Crossref] [PubMed]

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

Yun, F.

S. Zhang, W. Wang, F. Yun, L. He, H. Morkoç, X. Zhou, M. Tamargo, and R. Alfano, “Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(24), 4628–4630 (2002).
[Crossref]

Zhang, J.

Zhang, M.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
[Crossref]

Zhang, S.

S. Zhang, W. Wang, F. Yun, L. He, H. Morkoç, X. Zhou, M. Tamargo, and R. Alfano, “Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(24), 4628–4630 (2002).
[Crossref]

Zhang, W.

F. F. Sudradjat, W. Zhang, J. Woodward, H. Durmaz, T. D. Moustakas, and R. Paiella, “Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells,” Appl. Phys. Lett. 100(24), 241113 (2012).
[Crossref]

Zhang, X.

X. Zhang, Y. F. Cheung, Y. Zhang, and H. W. Choi, “Whispering-gallery mode lasing from optically free-standing InGaN microdisks,” Opt. Lett. 39(19), 5614–5617 (2014).
[Crossref] [PubMed]

D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi, “Visible blind GaN pin photodiodes,” Appl. Phys. Lett. 72(25), 3303–3305 (1998).
[Crossref]

Zhang, Y.

Zhao, B.

Zhou, X.

S. Zhang, W. Wang, F. Yun, L. He, H. Morkoç, X. Zhou, M. Tamargo, and R. Alfano, “Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(24), 4628–4630 (2002).
[Crossref]

Zhu, G.

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

Y. Wang, G. Zhu, W. Cai, X. Gao, Y. Yang, J. Yuan, Z. Shi, and H. Zhu, “On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides,” Appl. Phys. Lett. 108(16), 162102 (2016).
[Crossref]

J. Yuan, W. Cai, X. Gao, G. Zhu, D. Bai, H. Zhu, and Y. Wang, “Monolithic integration of a suspended light-emitting diode with a Y-branch structure,” Appl. Phys. Express 9(3), 032202 (2016).
[Crossref]

X. Li, G. Zhu, X. Gao, D. Bai, X. Huang, X. Cao, H. Zhu, K. Hane, and Y. Wang, “Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality,” IEEE Photonics J. 7(6), 1–7 (2015).

Zhu, H.

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

J. Yuan, W. Cai, X. Gao, G. Zhu, D. Bai, H. Zhu, and Y. Wang, “Monolithic integration of a suspended light-emitting diode with a Y-branch structure,” Appl. Phys. Express 9(3), 032202 (2016).
[Crossref]

W. Cai, Y. Yang, X. Gao, J. Yuan, W. Yuan, H. Zhu, and Y. Wang, “On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities,” Opt. Express 24(6), 6004–6010 (2016).
[Crossref] [PubMed]

Y. Wang, G. Zhu, W. Cai, X. Gao, Y. Yang, J. Yuan, Z. Shi, and H. Zhu, “On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides,” Appl. Phys. Lett. 108(16), 162102 (2016).
[Crossref]

D. Bai, T. Wu, X. Li, X. Gao, Y. Xu, Z. Cao, H. Zhu, and Y. Wang, “Suspended GaN-based nanostructure for integrated optics,” Appl. Phys. B 122(9), 1–7 (2016).
[Crossref]

X. Li, G. Zhu, X. Gao, D. Bai, X. Huang, X. Cao, H. Zhu, K. Hane, and Y. Wang, “Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality,” IEEE Photonics J. 7(6), 1–7 (2015).

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
[Crossref]

Zhu, H. B.

W. Cai, X. M. Gao, W. Yuan, Y. C. Yang, J. L. Yuan, H. B. Zhu, and Y. J. Wang, “Integrated p-n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities,” Appl. Phys. Express 9(5), 052204 (2016).
[Crossref]

Zhuo, X.

Appl. Phys. B (1)

D. Bai, T. Wu, X. Li, X. Gao, Y. Xu, Z. Cao, H. Zhu, and Y. Wang, “Suspended GaN-based nanostructure for integrated optics,” Appl. Phys. B 122(9), 1–7 (2016).
[Crossref]

Appl. Phys. Express (3)

J. Yuan, W. Cai, X. Gao, G. Zhu, D. Bai, H. Zhu, and Y. Wang, “Monolithic integration of a suspended light-emitting diode with a Y-branch structure,” Appl. Phys. Express 9(3), 032202 (2016).
[Crossref]

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, M. Cryan, M. Zhang, and H. Zhu, “Suspended membrane GaN gratings for refractive index sensing,” Appl. Phys. Express 7(5), 052201 (2014).
[Crossref]

W. Cai, X. M. Gao, W. Yuan, Y. C. Yang, J. L. Yuan, H. B. Zhu, and Y. J. Wang, “Integrated p-n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities,” Appl. Phys. Express 9(5), 052204 (2016).
[Crossref]

Appl. Phys. Lett. (8)

Y. Wang, G. Zhu, W. Cai, X. Gao, Y. Yang, J. Yuan, Z. Shi, and H. Zhu, “On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides,” Appl. Phys. Lett. 108(16), 162102 (2016).
[Crossref]

D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi, “Visible blind GaN pin photodiodes,” Appl. Phys. Lett. 72(25), 3303–3305 (1998).
[Crossref]

R. Hui, S. Taherion, Y. Wan, J. Li, S. Jin, J. Lin, and H. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett. 82(9), 1326–1328 (2003).
[Crossref]

R. Singh, D. Doppalapudi, T. Moustakas, and L. Romano, “Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition,” Appl. Phys. Lett. 70(9), 1089–1091 (1997).
[Crossref]

S. Zhang, W. Wang, F. Yun, L. He, H. Morkoç, X. Zhou, M. Tamargo, and R. Alfano, “Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(24), 4628–4630 (2002).
[Crossref]

G. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty, “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Appl. Phys. Lett. 71(15), 2154–2156 (1997).
[Crossref]

F. F. Sudradjat, W. Zhang, J. Woodward, H. Durmaz, T. D. Moustakas, and R. Paiella, “Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells,” Appl. Phys. Lett. 100(24), 241113 (2012).
[Crossref]

D. Hofstetter, S.-S. Schad, H. Wu, W. J. Schaff, and L. F. Eastman, “GaN/AlN-based quantum-well infrared photodetector for 1.55 μm,” Appl. Phys. Lett. 83(3), 572–574 (2003).
[Crossref]

Appl. Phys., A Mater. Sci. Process. (1)

D. Bai, X. Gao, W. Cai, W. Yuan, Z. Shi, X. Li, Y. Xu, J. Yuan, G. Zhu, Y. Yang, C. Yang, X. Cao, H. Zhu, and Y. Wang, “Fabrication of suspended light-emitting diode and waveguide on a single chip,” Appl. Phys., A Mater. Sci. Process. 122(5), 1–6 (2016).
[Crossref]

IEEE Photonics J. (1)

X. Li, G. Zhu, X. Gao, D. Bai, X. Huang, X. Cao, H. Zhu, K. Hane, and Y. Wang, “Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality,” IEEE Photonics J. 7(6), 1–7 (2015).

IEEE Quantum Electronics J. (1)

J. Pereiro, C. Rivera, Á. Navarro, E. Muñoz, R. Czernecki, S. Grzanka, and M. Leszczynski, “Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance,” IEEE Quantum Electronics J. 45(6), 617–622 (2009).
[Crossref]

IEEE Sens. J. (1)

Z.-D. Huang, W.-Y. Weng, S.-J. Chang, Y.-F. Hua, C.-J. Chiu, T.-J. Hsueh, and S.-L. Wu, “InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-Cap Layers,” IEEE Sens. J. 13(4), 1187–1191 (2013).
[Crossref]

J. Appl. Phys. (1)

Y.-T. Moon, D.-J. Kim, K.-M. Song, C.-J. Choi, S.-H. Han, T.-Y. Seong, and S.-J. Park, “Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 89(11), 6514–6518 (2001).
[Crossref]

J. Cryst. Growth (2)

A. Dussaigne, B. Damilano, N. Grandjean, and J. Massies, “In surface segregation in InGaN/GaN quantum wells,” J. Cryst. Growth 251(1-4), 471–475 (2003).
[Crossref]

J. Pau, J. Pereiro, C. Rivera, E. Munoz, and E. Calleja, “Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications,” J. Cryst. Growth 278(1), 718–722 (2005).
[Crossref]

J. Electron. Mater. (1)

J. Roberts, C. Parker, J. Muth, S. Leboeuf, M. Aumer, S. Bedair, and M. Reed, “Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1− xN (0≤ x≤ 0.13),” J. Electron. Mater. 31(1), L1–L6 (2002).
[Crossref]

J. Phys. Condens. Matter (1)

E. Munoz, E. Monroy, J. Pau, F. Calle, F. Omnes, and P. Gibart, “III nitrides and UV detection,” J. Phys. Condens. Matter 13(32), 7115–7137 (2001).
[Crossref]

Nat. Photonics (1)

A. Y. Piggott, J. Lu, K. G. Lagoudakis, J. Petykiewicz, T. M. Babinec, and J. Vuckovic, “Inverse design and demonstration of a compact and broadband on-chip wavelength demultiplexer,” Nat. Photonics 9(6), 374–377 (2015).
[Crossref]

Opt. Express (3)

Opt. Lett. (2)

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A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, D. Neculoiu, E. Pavelescu, and A. Stavrinidis, “Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies,” Thin Solid Films 520(6), 2158–2161 (2012).
[Crossref]

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C. Rivera, J. Pau, F. Naranjo, and E. Munoz, “Novel photodetectors based on InGaN/GaN multiple quantum wells,” Physica Status Solidi (a) 201(12), 2658–2662 (2004).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1 (a) Optical micrograph of the suspended waveguide photodetector obtained from silicon side; (b) SEM image of the fabricated photodetector and waveguide; (c) SEM image of the suspended waveguide; (d) AFM image of the electrode region.

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Fig. 2
Fig. 2 (a) The micro-reflectance setup; Schematic of illumination spot focused onto the suspended device (b) bottom surface; (c) waveguide end facet.

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Fig. 3
Fig. 3 (a) Measured reflectance spectra of suspended membrane with/without metal contacts, and the inset is the optical image of suspended photodetector obtained by the CCD camera; (b) Measured photocurrent at an illumination wavelength of 435 nm; (c) Spectral response of the suspended photodetector; (d) The capacitance-voltage curves for suspended photodetector at different frequencies (1-5 MHz).

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Fig. 4
Fig. 4 (a) Measured photocurrent at an illumination wavelength of 435 nm, and the inset is the optical image of suspended waveguide; (b) Responsivity spectra of the suspended waveguide photodetector at 0 V bias; (c) Responsivity spectra of the suspended waveguide photodetector at 3 V bias; (d) The induced photocurrent temporal trace of the suspended waveguide photodetector.

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Fig. 5
Fig. 5 (a) Plan view FDTD simulation of 10 μm wide suspended waveguide; (b) TM field profile of guided modes.

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