Abstract

Amorphous In2Ga2ZnO7 (IGZO) films with adjustable structure and properties were deposited on glass substrates by magnetron sputtering, and the corresponding parameters of growth temperature which would improve the electrical and optical properties of the IGZO films were further investigated. The IGZO films prepared at the temperature range from room temperature to 300 °C demonstrated smooth surfaces, and were constructed by numerous nanoparticles with amorphous phase and dense structure. Furthermore, the resistivity, carrier concentration and Hall mobility of the IGZO films showed obvious changes under different growth temperatures. From this study, it could be found that the IGZO film showed the smallest value of direct current resistivity at 300 °C, and displayed high transmittance in the visible light range. The band gap (3.80 eV) of the IGZO films was red-shifted slightly as the growth temperature increased.

© 2015 Optical Society of America

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References

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  1. J. Xu, H. Wang, L. Yang, M. Jiang, S. Wei, and T. Zhang, “Low temperature growth of highly crystallized ZnO:Al films by ultrasonic spray pyrolysis from acetylacetone salt,” Mater. Sci. Eng. B 167(3), 182–186 (2010).
    [Crossref]
  2. G. Zhu, L. Zhi, H. Yang, H. Xu, and A. Yu, “Effect of target density on microstructural, electrical, and optical properties of indium tin oxide thin films,” J. Electron. Mater. 41(9), 2376–2379 (2012).
    [Crossref]
  3. R. J. Choudhary, S. B. Ogale, S. R. Shinde, V. N. Kulkarni, T. Venkatesan, K. S. Harshavardhan, M. Strikovski, and B. Hannoyer, “Pulsed-electron-beam deposition of transparent conducting SnO2 films and study of their properties,” Appl. Phys. Lett. 84(9), 1483–1485 (2004).
    [Crossref]
  4. J. S. Park, W. J. Maeng, H. S. Kim, and J. S. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
    [Crossref]
  5. E. Fortunato, P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins, “Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs,” Phys. Status Solidi (RRL) 1(1), R34–R36 (2007).
  6. S. J. Seo, C. G. Choi, Y. H. Hwang, and B. S. Bae, “High performance solution-processed amorphous zinc tin oxide thin film transistor,” J. Phys. D Appl. Phys. 42(3), 035106 (2009).
    [Crossref]
  7. M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, and D. A. Keszler, “Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer,” J. Phys. D Appl. Phys. 40(5), 1335–1338 (2007).
    [Crossref]
  8. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
    [Crossref] [PubMed]
  9. J. C. Jhu, T. C. Chang, G. W. Chang, Y. H. Tai, W. W. Tsai, W. J. Chiang, and J. Y. Yan, “Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment,” J. Appl. Phys. 114(20), 204501 (2013).
    [Crossref]
  10. A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1–2), 38–41 (2005).
    [Crossref]
  11. A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
    [Crossref]
  12. X. Su, L. Wang, R. Sun, C. Bao, Y. Lu, and R. P. Wang, “Amorphous (In2O3)x(Ga2O3)y(ZnO)1-x-y thin films with high mobility fabricated by pulsed laser deposition,” Appl. Surf. Sci. 282, 700–703 (2013).
    [Crossref]
  13. J. Chen, L. Wang, X. Su, and R. Wang, “Pulsed laser deposited InGaZnO thin film on silica glass,” J. Non-Cryst. Solids 358(17), 2466–2469 (2012).
    [Crossref]
  14. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett. 89(11), 112123 (2006).
    [Crossref]
  15. S. J. Liu, H. W. Fang, J. H. Hsieh, and J. Y. Juang, “Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique,” Mater. Res. Bull. 47(6), 1568–1571 (2012).
    [Crossref]
  16. A. Thakur, S. J. Kang, J. Y. Baik, H. Yoo, I. J. Lee, H. K. Lee, S. Jung, J. Park, and H. J. Shin, “Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films,” Mater. Res. Bull. 47(10), 2911–2914 (2012).
    [Crossref]
  17. S. Kim, W. I. Lee, E. H. Lee, S. K. Hwang, and C. Lee, “Dependence of the resistivity and the transmittance of sputter deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature,” J. Mater. Sci. 42(13), 4845–4849 (2007).
    [Crossref]
  18. M. Lee and J. Dho, “Controlling the electrical and the optical properties of amorphous IGZO films prepared by using pulsed laser deposition,” J. Korean Phys. Soc. 58(3), 492–497 (2011).
    [Crossref]
  19. Y. H. Kim, J. Jeong, K. S. Lee, B. Cheong, T. Y. Seong, and W. M. Kim, “Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films,” Appl. Surf. Sci. 257(1), 109–115 (2010).
    [Crossref]
  20. J. H. Lee, “Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering,” J. Electroceram. 23(2-4), 554–558 (2009).
    [Crossref]
  21. Y. D. Ko, K. C. Kim, and Y. S. Kim, “Effects of substrate temperature on the Ga-doped ZnO films as an anode material of organic light emitting diodes,” Superlattices Microstruct. 51(6), 933–941 (2012).
    [Crossref]
  22. M. S. Kim, D. Y. Kim, S. B. Seo, K. Bae, S. Y. Sohn, and H. M. Kim, “Properties of transparent conductive IGZO thin films deposited at various substrate temperatures,” J. KIEEME 23(12), 961–965 (2010).
  23. A. Murat, A. U. Adler, T. O. Mason, and J. E. Medvedeva, “Carrier generation in multicomponent wide-bandgap oxides: InGaZnO4.,” J. Am. Chem. Soc. 135(15), 5685–5692 (2013).
    [Crossref] [PubMed]
  24. N. Naghavi, C. Marcel, L. Dupont, A. Rougier, J. B. Leriche, and C. Guery, “Structural and physical characterization of transparent conducting pulsed laser deposited In2O3-ZnO thin films,” J. Mater. Chem. 10(10), 2315–2319 (2000).
    [Crossref]
  25. J. Tauc, “Optical properties and electronic structure of amorphous Ge and Si,” Mater. Res. Bull. 3(1), 37–46 (1968).
    [Crossref]
  26. A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
    [Crossref]

2013 (3)

J. C. Jhu, T. C. Chang, G. W. Chang, Y. H. Tai, W. W. Tsai, W. J. Chiang, and J. Y. Yan, “Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment,” J. Appl. Phys. 114(20), 204501 (2013).
[Crossref]

X. Su, L. Wang, R. Sun, C. Bao, Y. Lu, and R. P. Wang, “Amorphous (In2O3)x(Ga2O3)y(ZnO)1-x-y thin films with high mobility fabricated by pulsed laser deposition,” Appl. Surf. Sci. 282, 700–703 (2013).
[Crossref]

A. Murat, A. U. Adler, T. O. Mason, and J. E. Medvedeva, “Carrier generation in multicomponent wide-bandgap oxides: InGaZnO4.,” J. Am. Chem. Soc. 135(15), 5685–5692 (2013).
[Crossref] [PubMed]

2012 (7)

Y. D. Ko, K. C. Kim, and Y. S. Kim, “Effects of substrate temperature on the Ga-doped ZnO films as an anode material of organic light emitting diodes,” Superlattices Microstruct. 51(6), 933–941 (2012).
[Crossref]

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

J. Chen, L. Wang, X. Su, and R. Wang, “Pulsed laser deposited InGaZnO thin film on silica glass,” J. Non-Cryst. Solids 358(17), 2466–2469 (2012).
[Crossref]

S. J. Liu, H. W. Fang, J. H. Hsieh, and J. Y. Juang, “Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique,” Mater. Res. Bull. 47(6), 1568–1571 (2012).
[Crossref]

A. Thakur, S. J. Kang, J. Y. Baik, H. Yoo, I. J. Lee, H. K. Lee, S. Jung, J. Park, and H. J. Shin, “Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films,” Mater. Res. Bull. 47(10), 2911–2914 (2012).
[Crossref]

G. Zhu, L. Zhi, H. Yang, H. Xu, and A. Yu, “Effect of target density on microstructural, electrical, and optical properties of indium tin oxide thin films,” J. Electron. Mater. 41(9), 2376–2379 (2012).
[Crossref]

J. S. Park, W. J. Maeng, H. S. Kim, and J. S. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
[Crossref]

2011 (1)

M. Lee and J. Dho, “Controlling the electrical and the optical properties of amorphous IGZO films prepared by using pulsed laser deposition,” J. Korean Phys. Soc. 58(3), 492–497 (2011).
[Crossref]

2010 (3)

Y. H. Kim, J. Jeong, K. S. Lee, B. Cheong, T. Y. Seong, and W. M. Kim, “Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films,” Appl. Surf. Sci. 257(1), 109–115 (2010).
[Crossref]

J. Xu, H. Wang, L. Yang, M. Jiang, S. Wei, and T. Zhang, “Low temperature growth of highly crystallized ZnO:Al films by ultrasonic spray pyrolysis from acetylacetone salt,” Mater. Sci. Eng. B 167(3), 182–186 (2010).
[Crossref]

M. S. Kim, D. Y. Kim, S. B. Seo, K. Bae, S. Y. Sohn, and H. M. Kim, “Properties of transparent conductive IGZO thin films deposited at various substrate temperatures,” J. KIEEME 23(12), 961–965 (2010).

2009 (2)

J. H. Lee, “Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering,” J. Electroceram. 23(2-4), 554–558 (2009).
[Crossref]

S. J. Seo, C. G. Choi, Y. H. Hwang, and B. S. Bae, “High performance solution-processed amorphous zinc tin oxide thin film transistor,” J. Phys. D Appl. Phys. 42(3), 035106 (2009).
[Crossref]

2008 (1)

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[Crossref]

2007 (3)

S. Kim, W. I. Lee, E. H. Lee, S. K. Hwang, and C. Lee, “Dependence of the resistivity and the transmittance of sputter deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature,” J. Mater. Sci. 42(13), 4845–4849 (2007).
[Crossref]

M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, and D. A. Keszler, “Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer,” J. Phys. D Appl. Phys. 40(5), 1335–1338 (2007).
[Crossref]

E. Fortunato, P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins, “Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs,” Phys. Status Solidi (RRL) 1(1), R34–R36 (2007).

2006 (1)

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett. 89(11), 112123 (2006).
[Crossref]

2005 (1)

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1–2), 38–41 (2005).
[Crossref]

2004 (2)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

R. J. Choudhary, S. B. Ogale, S. R. Shinde, V. N. Kulkarni, T. Venkatesan, K. S. Harshavardhan, M. Strikovski, and B. Hannoyer, “Pulsed-electron-beam deposition of transparent conducting SnO2 films and study of their properties,” Appl. Phys. Lett. 84(9), 1483–1485 (2004).
[Crossref]

2000 (1)

N. Naghavi, C. Marcel, L. Dupont, A. Rougier, J. B. Leriche, and C. Guery, “Structural and physical characterization of transparent conducting pulsed laser deposited In2O3-ZnO thin films,” J. Mater. Chem. 10(10), 2315–2319 (2000).
[Crossref]

1968 (1)

J. Tauc, “Optical properties and electronic structure of amorphous Ge and Si,” Mater. Res. Bull. 3(1), 37–46 (1968).
[Crossref]

Abe, K.

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett. 89(11), 112123 (2006).
[Crossref]

Adler, A. U.

A. Murat, A. U. Adler, T. O. Mason, and J. E. Medvedeva, “Carrier generation in multicomponent wide-bandgap oxides: InGaZnO4.,” J. Am. Chem. Soc. 135(15), 5685–5692 (2013).
[Crossref] [PubMed]

Aiba, T.

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett. 89(11), 112123 (2006).
[Crossref]

Bae, B. S.

S. J. Seo, C. G. Choi, Y. H. Hwang, and B. S. Bae, “High performance solution-processed amorphous zinc tin oxide thin film transistor,” J. Phys. D Appl. Phys. 42(3), 035106 (2009).
[Crossref]

Bae, K.

M. S. Kim, D. Y. Kim, S. B. Seo, K. Bae, S. Y. Sohn, and H. M. Kim, “Properties of transparent conductive IGZO thin films deposited at various substrate temperatures,” J. KIEEME 23(12), 961–965 (2010).

Baik, J. Y.

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

A. Thakur, S. J. Kang, J. Y. Baik, H. Yoo, I. J. Lee, H. K. Lee, S. Jung, J. Park, and H. J. Shin, “Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films,” Mater. Res. Bull. 47(10), 2911–2914 (2012).
[Crossref]

Bao, C.

X. Su, L. Wang, R. Sun, C. Bao, Y. Lu, and R. P. Wang, “Amorphous (In2O3)x(Ga2O3)y(ZnO)1-x-y thin films with high mobility fabricated by pulsed laser deposition,” Appl. Surf. Sci. 282, 700–703 (2013).
[Crossref]

Barquinha, P.

E. Fortunato, P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins, “Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs,” Phys. Status Solidi (RRL) 1(1), R34–R36 (2007).

Chang, G. W.

J. C. Jhu, T. C. Chang, G. W. Chang, Y. H. Tai, W. W. Tsai, W. J. Chiang, and J. Y. Yan, “Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment,” J. Appl. Phys. 114(20), 204501 (2013).
[Crossref]

Chang, T. C.

J. C. Jhu, T. C. Chang, G. W. Chang, Y. H. Tai, W. W. Tsai, W. J. Chiang, and J. Y. Yan, “Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment,” J. Appl. Phys. 114(20), 204501 (2013).
[Crossref]

Chen, J.

J. Chen, L. Wang, X. Su, and R. Wang, “Pulsed laser deposited InGaZnO thin film on silica glass,” J. Non-Cryst. Solids 358(17), 2466–2469 (2012).
[Crossref]

Cheong, B.

Y. H. Kim, J. Jeong, K. S. Lee, B. Cheong, T. Y. Seong, and W. M. Kim, “Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films,” Appl. Surf. Sci. 257(1), 109–115 (2010).
[Crossref]

Chiang, H. Q.

M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, and D. A. Keszler, “Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer,” J. Phys. D Appl. Phys. 40(5), 1335–1338 (2007).
[Crossref]

Chiang, W. J.

J. C. Jhu, T. C. Chang, G. W. Chang, Y. H. Tai, W. W. Tsai, W. J. Chiang, and J. Y. Yan, “Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment,” J. Appl. Phys. 114(20), 204501 (2013).
[Crossref]

Choi, C. G.

S. J. Seo, C. G. Choi, Y. H. Hwang, and B. S. Bae, “High performance solution-processed amorphous zinc tin oxide thin film transistor,” J. Phys. D Appl. Phys. 42(3), 035106 (2009).
[Crossref]

Choudhary, R. J.

R. J. Choudhary, S. B. Ogale, S. R. Shinde, V. N. Kulkarni, T. Venkatesan, K. S. Harshavardhan, M. Strikovski, and B. Hannoyer, “Pulsed-electron-beam deposition of transparent conducting SnO2 films and study of their properties,” Appl. Phys. Lett. 84(9), 1483–1485 (2004).
[Crossref]

Den, T.

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett. 89(11), 112123 (2006).
[Crossref]

Dhawan, A.

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[Crossref]

Dho, J.

M. Lee and J. Dho, “Controlling the electrical and the optical properties of amorphous IGZO films prepared by using pulsed laser deposition,” J. Korean Phys. Soc. 58(3), 492–497 (2011).
[Crossref]

Dupont, L.

N. Naghavi, C. Marcel, L. Dupont, A. Rougier, J. B. Leriche, and C. Guery, “Structural and physical characterization of transparent conducting pulsed laser deposited In2O3-ZnO thin films,” J. Mater. Chem. 10(10), 2315–2319 (2000).
[Crossref]

Fang, H. W.

S. J. Liu, H. W. Fang, J. H. Hsieh, and J. Y. Juang, “Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique,” Mater. Res. Bull. 47(6), 1568–1571 (2012).
[Crossref]

Fortunato, E.

E. Fortunato, P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins, “Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs,” Phys. Status Solidi (RRL) 1(1), R34–R36 (2007).

Gollakota, P.

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[Crossref]

Gonçalves, G.

E. Fortunato, P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins, “Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs,” Phys. Status Solidi (RRL) 1(1), R34–R36 (2007).

Grover, M. S.

M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, and D. A. Keszler, “Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer,” J. Phys. D Appl. Phys. 40(5), 1335–1338 (2007).
[Crossref]

Guery, C.

N. Naghavi, C. Marcel, L. Dupont, A. Rougier, J. B. Leriche, and C. Guery, “Structural and physical characterization of transparent conducting pulsed laser deposited In2O3-ZnO thin films,” J. Mater. Chem. 10(10), 2315–2319 (2000).
[Crossref]

Hannoyer, B.

R. J. Choudhary, S. B. Ogale, S. R. Shinde, V. N. Kulkarni, T. Venkatesan, K. S. Harshavardhan, M. Strikovski, and B. Hannoyer, “Pulsed-electron-beam deposition of transparent conducting SnO2 films and study of their properties,” Appl. Phys. Lett. 84(9), 1483–1485 (2004).
[Crossref]

Harshavardhan, K. S.

R. J. Choudhary, S. B. Ogale, S. R. Shinde, V. N. Kulkarni, T. Venkatesan, K. S. Harshavardhan, M. Strikovski, and B. Hannoyer, “Pulsed-electron-beam deposition of transparent conducting SnO2 films and study of their properties,” Appl. Phys. Lett. 84(9), 1483–1485 (2004).
[Crossref]

Hersh, P. A.

M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, and D. A. Keszler, “Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer,” J. Phys. D Appl. Phys. 40(5), 1335–1338 (2007).
[Crossref]

Hirano, M.

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1–2), 38–41 (2005).
[Crossref]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Hosono, H.

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett. 89(11), 112123 (2006).
[Crossref]

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1–2), 38–41 (2005).
[Crossref]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Hsieh, J. H.

S. J. Liu, H. W. Fang, J. H. Hsieh, and J. Y. Juang, “Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique,” Mater. Res. Bull. 47(6), 1568–1571 (2012).
[Crossref]

Hwang, S. K.

S. Kim, W. I. Lee, E. H. Lee, S. K. Hwang, and C. Lee, “Dependence of the resistivity and the transmittance of sputter deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature,” J. Mater. Sci. 42(13), 4845–4849 (2007).
[Crossref]

Hwang, Y. H.

S. J. Seo, C. G. Choi, Y. H. Hwang, and B. S. Bae, “High performance solution-processed amorphous zinc tin oxide thin film transistor,” J. Phys. D Appl. Phys. 42(3), 035106 (2009).
[Crossref]

Jeong, J.

Y. H. Kim, J. Jeong, K. S. Lee, B. Cheong, T. Y. Seong, and W. M. Kim, “Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films,” Appl. Surf. Sci. 257(1), 109–115 (2010).
[Crossref]

Jhu, J. C.

J. C. Jhu, T. C. Chang, G. W. Chang, Y. H. Tai, W. W. Tsai, W. J. Chiang, and J. Y. Yan, “Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment,” J. Appl. Phys. 114(20), 204501 (2013).
[Crossref]

Jiang, M.

J. Xu, H. Wang, L. Yang, M. Jiang, S. Wei, and T. Zhang, “Low temperature growth of highly crystallized ZnO:Al films by ultrasonic spray pyrolysis from acetylacetone salt,” Mater. Sci. Eng. B 167(3), 182–186 (2010).
[Crossref]

Juang, J. Y.

S. J. Liu, H. W. Fang, J. H. Hsieh, and J. Y. Juang, “Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique,” Mater. Res. Bull. 47(6), 1568–1571 (2012).
[Crossref]

Jung, S.

A. Thakur, S. J. Kang, J. Y. Baik, H. Yoo, I. J. Lee, H. K. Lee, S. Jung, J. Park, and H. J. Shin, “Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films,” Mater. Res. Bull. 47(10), 2911–2914 (2012).
[Crossref]

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

Kamiya, T.

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett. 89(11), 112123 (2006).
[Crossref]

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1–2), 38–41 (2005).
[Crossref]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Kang, S. J.

A. Thakur, S. J. Kang, J. Y. Baik, H. Yoo, I. J. Lee, H. K. Lee, S. Jung, J. Park, and H. J. Shin, “Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films,” Mater. Res. Bull. 47(10), 2911–2914 (2012).
[Crossref]

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

Keszler, D. A.

M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, and D. A. Keszler, “Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer,” J. Phys. D Appl. Phys. 40(5), 1335–1338 (2007).
[Crossref]

Kettenring, E. S.

M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, and D. A. Keszler, “Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer,” J. Phys. D Appl. Phys. 40(5), 1335–1338 (2007).
[Crossref]

Kim, B.

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

Kim, D. Y.

M. S. Kim, D. Y. Kim, S. B. Seo, K. Bae, S. Y. Sohn, and H. M. Kim, “Properties of transparent conductive IGZO thin films deposited at various substrate temperatures,” J. KIEEME 23(12), 961–965 (2010).

Kim, H. M.

M. S. Kim, D. Y. Kim, S. B. Seo, K. Bae, S. Y. Sohn, and H. M. Kim, “Properties of transparent conductive IGZO thin films deposited at various substrate temperatures,” J. KIEEME 23(12), 961–965 (2010).

Kim, H. S.

J. S. Park, W. J. Maeng, H. S. Kim, and J. S. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
[Crossref]

Kim, K.

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

Kim, K. C.

Y. D. Ko, K. C. Kim, and Y. S. Kim, “Effects of substrate temperature on the Ga-doped ZnO films as an anode material of organic light emitting diodes,” Superlattices Microstruct. 51(6), 933–941 (2012).
[Crossref]

Kim, M. S.

M. S. Kim, D. Y. Kim, S. B. Seo, K. Bae, S. Y. Sohn, and H. M. Kim, “Properties of transparent conductive IGZO thin films deposited at various substrate temperatures,” J. KIEEME 23(12), 961–965 (2010).

Kim, S.

S. Kim, W. I. Lee, E. H. Lee, S. K. Hwang, and C. Lee, “Dependence of the resistivity and the transmittance of sputter deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature,” J. Mater. Sci. 42(13), 4845–4849 (2007).
[Crossref]

Kim, W. M.

Y. H. Kim, J. Jeong, K. S. Lee, B. Cheong, T. Y. Seong, and W. M. Kim, “Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films,” Appl. Surf. Sci. 257(1), 109–115 (2010).
[Crossref]

Kim, Y. H.

Y. H. Kim, J. Jeong, K. S. Lee, B. Cheong, T. Y. Seong, and W. M. Kim, “Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films,” Appl. Surf. Sci. 257(1), 109–115 (2010).
[Crossref]

Kim, Y. S.

Y. D. Ko, K. C. Kim, and Y. S. Kim, “Effects of substrate temperature on the Ga-doped ZnO films as an anode material of organic light emitting diodes,” Superlattices Microstruct. 51(6), 933–941 (2012).
[Crossref]

Ko, Y. D.

Y. D. Ko, K. C. Kim, and Y. S. Kim, “Effects of substrate temperature on the Ga-doped ZnO films as an anode material of organic light emitting diodes,” Superlattices Microstruct. 51(6), 933–941 (2012).
[Crossref]

Kulkarni, V. N.

R. J. Choudhary, S. B. Ogale, S. R. Shinde, V. N. Kulkarni, T. Venkatesan, K. S. Harshavardhan, M. Strikovski, and B. Hannoyer, “Pulsed-electron-beam deposition of transparent conducting SnO2 films and study of their properties,” Appl. Phys. Lett. 84(9), 1483–1485 (2004).
[Crossref]

Kumomi, H.

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett. 89(11), 112123 (2006).
[Crossref]

Lee, C.

S. Kim, W. I. Lee, E. H. Lee, S. K. Hwang, and C. Lee, “Dependence of the resistivity and the transmittance of sputter deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature,” J. Mater. Sci. 42(13), 4845–4849 (2007).
[Crossref]

Lee, E. H.

S. Kim, W. I. Lee, E. H. Lee, S. K. Hwang, and C. Lee, “Dependence of the resistivity and the transmittance of sputter deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature,” J. Mater. Sci. 42(13), 4845–4849 (2007).
[Crossref]

Lee, H. K.

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

A. Thakur, S. J. Kang, J. Y. Baik, H. Yoo, I. J. Lee, H. K. Lee, S. Jung, J. Park, and H. J. Shin, “Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films,” Mater. Res. Bull. 47(10), 2911–2914 (2012).
[Crossref]

Lee, I. J.

A. Thakur, S. J. Kang, J. Y. Baik, H. Yoo, I. J. Lee, H. K. Lee, S. Jung, J. Park, and H. J. Shin, “Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films,” Mater. Res. Bull. 47(10), 2911–2914 (2012).
[Crossref]

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

Lee, J. H.

J. H. Lee, “Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering,” J. Electroceram. 23(2-4), 554–558 (2009).
[Crossref]

Lee, K. S.

Y. H. Kim, J. Jeong, K. S. Lee, B. Cheong, T. Y. Seong, and W. M. Kim, “Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films,” Appl. Surf. Sci. 257(1), 109–115 (2010).
[Crossref]

Lee, M.

M. Lee and J. Dho, “Controlling the electrical and the optical properties of amorphous IGZO films prepared by using pulsed laser deposition,” J. Korean Phys. Soc. 58(3), 492–497 (2011).
[Crossref]

Lee, W. I.

S. Kim, W. I. Lee, E. H. Lee, S. K. Hwang, and C. Lee, “Dependence of the resistivity and the transmittance of sputter deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature,” J. Mater. Sci. 42(13), 4845–4849 (2007).
[Crossref]

Leriche, J. B.

N. Naghavi, C. Marcel, L. Dupont, A. Rougier, J. B. Leriche, and C. Guery, “Structural and physical characterization of transparent conducting pulsed laser deposited In2O3-ZnO thin films,” J. Mater. Chem. 10(10), 2315–2319 (2000).
[Crossref]

Liu, S. J.

S. J. Liu, H. W. Fang, J. H. Hsieh, and J. Y. Juang, “Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique,” Mater. Res. Bull. 47(6), 1568–1571 (2012).
[Crossref]

Lu, Y.

X. Su, L. Wang, R. Sun, C. Bao, Y. Lu, and R. P. Wang, “Amorphous (In2O3)x(Ga2O3)y(ZnO)1-x-y thin films with high mobility fabricated by pulsed laser deposition,” Appl. Surf. Sci. 282, 700–703 (2013).
[Crossref]

Maeng, W. J.

J. S. Park, W. J. Maeng, H. S. Kim, and J. S. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
[Crossref]

Marcel, C.

N. Naghavi, C. Marcel, L. Dupont, A. Rougier, J. B. Leriche, and C. Guery, “Structural and physical characterization of transparent conducting pulsed laser deposited In2O3-ZnO thin films,” J. Mater. Chem. 10(10), 2315–2319 (2000).
[Crossref]

Martins, R.

E. Fortunato, P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins, “Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs,” Phys. Status Solidi (RRL) 1(1), R34–R36 (2007).

Mason, T. O.

A. Murat, A. U. Adler, T. O. Mason, and J. E. Medvedeva, “Carrier generation in multicomponent wide-bandgap oxides: InGaZnO4.,” J. Am. Chem. Soc. 135(15), 5685–5692 (2013).
[Crossref] [PubMed]

Medvedeva, J. E.

A. Murat, A. U. Adler, T. O. Mason, and J. E. Medvedeva, “Carrier generation in multicomponent wide-bandgap oxides: InGaZnO4.,” J. Am. Chem. Soc. 135(15), 5685–5692 (2013).
[Crossref] [PubMed]

Murat, A.

A. Murat, A. U. Adler, T. O. Mason, and J. E. Medvedeva, “Carrier generation in multicomponent wide-bandgap oxides: InGaZnO4.,” J. Am. Chem. Soc. 135(15), 5685–5692 (2013).
[Crossref] [PubMed]

Muth, J. F.

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[Crossref]

Naghavi, N.

N. Naghavi, C. Marcel, L. Dupont, A. Rougier, J. B. Leriche, and C. Guery, “Structural and physical characterization of transparent conducting pulsed laser deposited In2O3-ZnO thin films,” J. Mater. Chem. 10(10), 2315–2319 (2000).
[Crossref]

Nomura, K.

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett. 89(11), 112123 (2006).
[Crossref]

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1–2), 38–41 (2005).
[Crossref]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Ogale, S. B.

R. J. Choudhary, S. B. Ogale, S. R. Shinde, V. N. Kulkarni, T. Venkatesan, K. S. Harshavardhan, M. Strikovski, and B. Hannoyer, “Pulsed-electron-beam deposition of transparent conducting SnO2 films and study of their properties,” Appl. Phys. Lett. 84(9), 1483–1485 (2004).
[Crossref]

Ohta, H.

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1–2), 38–41 (2005).
[Crossref]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Park, J.

A. Thakur, S. J. Kang, J. Y. Baik, H. Yoo, I. J. Lee, H. K. Lee, S. Jung, J. Park, and H. J. Shin, “Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films,” Mater. Res. Bull. 47(10), 2911–2914 (2012).
[Crossref]

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

Park, J. S.

J. S. Park, W. J. Maeng, H. S. Kim, and J. S. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
[Crossref]

J. S. Park, W. J. Maeng, H. S. Kim, and J. S. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
[Crossref]

Pereira, L.

E. Fortunato, P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins, “Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs,” Phys. Status Solidi (RRL) 1(1), R34–R36 (2007).

Pimentel, A.

E. Fortunato, P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins, “Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs,” Phys. Status Solidi (RRL) 1(1), R34–R36 (2007).

Rougier, A.

N. Naghavi, C. Marcel, L. Dupont, A. Rougier, J. B. Leriche, and C. Guery, “Structural and physical characterization of transparent conducting pulsed laser deposited In2O3-ZnO thin films,” J. Mater. Chem. 10(10), 2315–2319 (2000).
[Crossref]

Sano, M.

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett. 89(11), 112123 (2006).
[Crossref]

Seo, S. B.

M. S. Kim, D. Y. Kim, S. B. Seo, K. Bae, S. Y. Sohn, and H. M. Kim, “Properties of transparent conductive IGZO thin films deposited at various substrate temperatures,” J. KIEEME 23(12), 961–965 (2010).

Seo, S. J.

S. J. Seo, C. G. Choi, Y. H. Hwang, and B. S. Bae, “High performance solution-processed amorphous zinc tin oxide thin film transistor,” J. Phys. D Appl. Phys. 42(3), 035106 (2009).
[Crossref]

Seong, T. Y.

Y. H. Kim, J. Jeong, K. S. Lee, B. Cheong, T. Y. Seong, and W. M. Kim, “Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films,” Appl. Surf. Sci. 257(1), 109–115 (2010).
[Crossref]

Shin, H. J.

A. Thakur, S. J. Kang, J. Y. Baik, H. Yoo, I. J. Lee, H. K. Lee, S. Jung, J. Park, and H. J. Shin, “Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films,” Mater. Res. Bull. 47(10), 2911–2914 (2012).
[Crossref]

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

Shinde, S. R.

R. J. Choudhary, S. B. Ogale, S. R. Shinde, V. N. Kulkarni, T. Venkatesan, K. S. Harshavardhan, M. Strikovski, and B. Hannoyer, “Pulsed-electron-beam deposition of transparent conducting SnO2 films and study of their properties,” Appl. Phys. Lett. 84(9), 1483–1485 (2004).
[Crossref]

Sohn, S. Y.

M. S. Kim, D. Y. Kim, S. B. Seo, K. Bae, S. Y. Sohn, and H. M. Kim, “Properties of transparent conductive IGZO thin films deposited at various substrate temperatures,” J. KIEEME 23(12), 961–965 (2010).

Strikovski, M.

R. J. Choudhary, S. B. Ogale, S. R. Shinde, V. N. Kulkarni, T. Venkatesan, K. S. Harshavardhan, M. Strikovski, and B. Hannoyer, “Pulsed-electron-beam deposition of transparent conducting SnO2 films and study of their properties,” Appl. Phys. Lett. 84(9), 1483–1485 (2004).
[Crossref]

Su, X.

X. Su, L. Wang, R. Sun, C. Bao, Y. Lu, and R. P. Wang, “Amorphous (In2O3)x(Ga2O3)y(ZnO)1-x-y thin films with high mobility fabricated by pulsed laser deposition,” Appl. Surf. Sci. 282, 700–703 (2013).
[Crossref]

J. Chen, L. Wang, X. Su, and R. Wang, “Pulsed laser deposited InGaZnO thin film on silica glass,” J. Non-Cryst. Solids 358(17), 2466–2469 (2012).
[Crossref]

Sun, R.

X. Su, L. Wang, R. Sun, C. Bao, Y. Lu, and R. P. Wang, “Amorphous (In2O3)x(Ga2O3)y(ZnO)1-x-y thin films with high mobility fabricated by pulsed laser deposition,” Appl. Surf. Sci. 282, 700–703 (2013).
[Crossref]

Suresh, A.

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[Crossref]

Tai, Y. H.

J. C. Jhu, T. C. Chang, G. W. Chang, Y. H. Tai, W. W. Tsai, W. J. Chiang, and J. Y. Yan, “Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment,” J. Appl. Phys. 114(20), 204501 (2013).
[Crossref]

Takagi, A.

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1–2), 38–41 (2005).
[Crossref]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Tauc, J.

J. Tauc, “Optical properties and electronic structure of amorphous Ge and Si,” Mater. Res. Bull. 3(1), 37–46 (1968).
[Crossref]

Thakur, A.

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

A. Thakur, S. J. Kang, J. Y. Baik, H. Yoo, I. J. Lee, H. K. Lee, S. Jung, J. Park, and H. J. Shin, “Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films,” Mater. Res. Bull. 47(10), 2911–2914 (2012).
[Crossref]

Tsai, W. W.

J. C. Jhu, T. C. Chang, G. W. Chang, Y. H. Tai, W. W. Tsai, W. J. Chiang, and J. Y. Yan, “Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment,” J. Appl. Phys. 114(20), 204501 (2013).
[Crossref]

Venkatesan, T.

R. J. Choudhary, S. B. Ogale, S. R. Shinde, V. N. Kulkarni, T. Venkatesan, K. S. Harshavardhan, M. Strikovski, and B. Hannoyer, “Pulsed-electron-beam deposition of transparent conducting SnO2 films and study of their properties,” Appl. Phys. Lett. 84(9), 1483–1485 (2004).
[Crossref]

Wager, J. F.

M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, and D. A. Keszler, “Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer,” J. Phys. D Appl. Phys. 40(5), 1335–1338 (2007).
[Crossref]

Wang, H.

J. Xu, H. Wang, L. Yang, M. Jiang, S. Wei, and T. Zhang, “Low temperature growth of highly crystallized ZnO:Al films by ultrasonic spray pyrolysis from acetylacetone salt,” Mater. Sci. Eng. B 167(3), 182–186 (2010).
[Crossref]

Wang, L.

X. Su, L. Wang, R. Sun, C. Bao, Y. Lu, and R. P. Wang, “Amorphous (In2O3)x(Ga2O3)y(ZnO)1-x-y thin films with high mobility fabricated by pulsed laser deposition,” Appl. Surf. Sci. 282, 700–703 (2013).
[Crossref]

J. Chen, L. Wang, X. Su, and R. Wang, “Pulsed laser deposited InGaZnO thin film on silica glass,” J. Non-Cryst. Solids 358(17), 2466–2469 (2012).
[Crossref]

Wang, R.

J. Chen, L. Wang, X. Su, and R. Wang, “Pulsed laser deposited InGaZnO thin film on silica glass,” J. Non-Cryst. Solids 358(17), 2466–2469 (2012).
[Crossref]

Wang, R. P.

X. Su, L. Wang, R. Sun, C. Bao, Y. Lu, and R. P. Wang, “Amorphous (In2O3)x(Ga2O3)y(ZnO)1-x-y thin films with high mobility fabricated by pulsed laser deposition,” Appl. Surf. Sci. 282, 700–703 (2013).
[Crossref]

Wei, S.

J. Xu, H. Wang, L. Yang, M. Jiang, S. Wei, and T. Zhang, “Low temperature growth of highly crystallized ZnO:Al films by ultrasonic spray pyrolysis from acetylacetone salt,” Mater. Sci. Eng. B 167(3), 182–186 (2010).
[Crossref]

Wellenius, P.

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[Crossref]

Xu, H.

G. Zhu, L. Zhi, H. Yang, H. Xu, and A. Yu, “Effect of target density on microstructural, electrical, and optical properties of indium tin oxide thin films,” J. Electron. Mater. 41(9), 2376–2379 (2012).
[Crossref]

Xu, J.

J. Xu, H. Wang, L. Yang, M. Jiang, S. Wei, and T. Zhang, “Low temperature growth of highly crystallized ZnO:Al films by ultrasonic spray pyrolysis from acetylacetone salt,” Mater. Sci. Eng. B 167(3), 182–186 (2010).
[Crossref]

Yabuta, H.

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett. 89(11), 112123 (2006).
[Crossref]

Yan, J. Y.

J. C. Jhu, T. C. Chang, G. W. Chang, Y. H. Tai, W. W. Tsai, W. J. Chiang, and J. Y. Yan, “Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment,” J. Appl. Phys. 114(20), 204501 (2013).
[Crossref]

Yanagi, H.

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1–2), 38–41 (2005).
[Crossref]

Yang, H.

G. Zhu, L. Zhi, H. Yang, H. Xu, and A. Yu, “Effect of target density on microstructural, electrical, and optical properties of indium tin oxide thin films,” J. Electron. Mater. 41(9), 2376–2379 (2012).
[Crossref]

Yang, L.

J. Xu, H. Wang, L. Yang, M. Jiang, S. Wei, and T. Zhang, “Low temperature growth of highly crystallized ZnO:Al films by ultrasonic spray pyrolysis from acetylacetone salt,” Mater. Sci. Eng. B 167(3), 182–186 (2010).
[Crossref]

Yoo, H.

A. Thakur, S. J. Kang, J. Y. Baik, H. Yoo, I. J. Lee, H. K. Lee, S. Jung, J. Park, and H. J. Shin, “Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films,” Mater. Res. Bull. 47(10), 2911–2914 (2012).
[Crossref]

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

Yu, A.

G. Zhu, L. Zhi, H. Yang, H. Xu, and A. Yu, “Effect of target density on microstructural, electrical, and optical properties of indium tin oxide thin films,” J. Electron. Mater. 41(9), 2376–2379 (2012).
[Crossref]

Zhang, T.

J. Xu, H. Wang, L. Yang, M. Jiang, S. Wei, and T. Zhang, “Low temperature growth of highly crystallized ZnO:Al films by ultrasonic spray pyrolysis from acetylacetone salt,” Mater. Sci. Eng. B 167(3), 182–186 (2010).
[Crossref]

Zhi, L.

G. Zhu, L. Zhi, H. Yang, H. Xu, and A. Yu, “Effect of target density on microstructural, electrical, and optical properties of indium tin oxide thin films,” J. Electron. Mater. 41(9), 2376–2379 (2012).
[Crossref]

Zhu, G.

G. Zhu, L. Zhi, H. Yang, H. Xu, and A. Yu, “Effect of target density on microstructural, electrical, and optical properties of indium tin oxide thin films,” J. Electron. Mater. 41(9), 2376–2379 (2012).
[Crossref]

Appl. Phys. Lett. (2)

R. J. Choudhary, S. B. Ogale, S. R. Shinde, V. N. Kulkarni, T. Venkatesan, K. S. Harshavardhan, M. Strikovski, and B. Hannoyer, “Pulsed-electron-beam deposition of transparent conducting SnO2 films and study of their properties,” Appl. Phys. Lett. 84(9), 1483–1485 (2004).
[Crossref]

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett. 89(11), 112123 (2006).
[Crossref]

Appl. Surf. Sci. (2)

X. Su, L. Wang, R. Sun, C. Bao, Y. Lu, and R. P. Wang, “Amorphous (In2O3)x(Ga2O3)y(ZnO)1-x-y thin films with high mobility fabricated by pulsed laser deposition,” Appl. Surf. Sci. 282, 700–703 (2013).
[Crossref]

Y. H. Kim, J. Jeong, K. S. Lee, B. Cheong, T. Y. Seong, and W. M. Kim, “Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films,” Appl. Surf. Sci. 257(1), 109–115 (2010).
[Crossref]

ECS J. Solid State Sc. (1)

A. Thakur, H. Yoo, S. J. Kang, J. Y. Baik, I. J. Lee, H. K. Lee, K. Kim, B. Kim, S. Jung, J. Park, and H. J. Shin, “Effects of substrate temperature on structural, electrical and optical properties of amorphous In-Ga-Zn-O thin films,” ECS J. Solid State Sc. 1(1), Q11–Q15 (2012).
[Crossref]

J. Am. Chem. Soc. (1)

A. Murat, A. U. Adler, T. O. Mason, and J. E. Medvedeva, “Carrier generation in multicomponent wide-bandgap oxides: InGaZnO4.,” J. Am. Chem. Soc. 135(15), 5685–5692 (2013).
[Crossref] [PubMed]

J. Appl. Phys. (1)

J. C. Jhu, T. C. Chang, G. W. Chang, Y. H. Tai, W. W. Tsai, W. J. Chiang, and J. Y. Yan, “Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment,” J. Appl. Phys. 114(20), 204501 (2013).
[Crossref]

J. Electroceram. (1)

J. H. Lee, “Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering,” J. Electroceram. 23(2-4), 554–558 (2009).
[Crossref]

J. Electron. Mater. (1)

G. Zhu, L. Zhi, H. Yang, H. Xu, and A. Yu, “Effect of target density on microstructural, electrical, and optical properties of indium tin oxide thin films,” J. Electron. Mater. 41(9), 2376–2379 (2012).
[Crossref]

J. KIEEME (1)

M. S. Kim, D. Y. Kim, S. B. Seo, K. Bae, S. Y. Sohn, and H. M. Kim, “Properties of transparent conductive IGZO thin films deposited at various substrate temperatures,” J. KIEEME 23(12), 961–965 (2010).

J. Korean Phys. Soc. (1)

M. Lee and J. Dho, “Controlling the electrical and the optical properties of amorphous IGZO films prepared by using pulsed laser deposition,” J. Korean Phys. Soc. 58(3), 492–497 (2011).
[Crossref]

J. Mater. Chem. (1)

N. Naghavi, C. Marcel, L. Dupont, A. Rougier, J. B. Leriche, and C. Guery, “Structural and physical characterization of transparent conducting pulsed laser deposited In2O3-ZnO thin films,” J. Mater. Chem. 10(10), 2315–2319 (2000).
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J. Mater. Sci. (1)

S. Kim, W. I. Lee, E. H. Lee, S. K. Hwang, and C. Lee, “Dependence of the resistivity and the transmittance of sputter deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature,” J. Mater. Sci. 42(13), 4845–4849 (2007).
[Crossref]

J. Non-Cryst. Solids (1)

J. Chen, L. Wang, X. Su, and R. Wang, “Pulsed laser deposited InGaZnO thin film on silica glass,” J. Non-Cryst. Solids 358(17), 2466–2469 (2012).
[Crossref]

J. Phys. D Appl. Phys. (2)

S. J. Seo, C. G. Choi, Y. H. Hwang, and B. S. Bae, “High performance solution-processed amorphous zinc tin oxide thin film transistor,” J. Phys. D Appl. Phys. 42(3), 035106 (2009).
[Crossref]

M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, and D. A. Keszler, “Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer,” J. Phys. D Appl. Phys. 40(5), 1335–1338 (2007).
[Crossref]

Mater. Res. Bull. (3)

S. J. Liu, H. W. Fang, J. H. Hsieh, and J. Y. Juang, “Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique,” Mater. Res. Bull. 47(6), 1568–1571 (2012).
[Crossref]

A. Thakur, S. J. Kang, J. Y. Baik, H. Yoo, I. J. Lee, H. K. Lee, S. Jung, J. Park, and H. J. Shin, “Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films,” Mater. Res. Bull. 47(10), 2911–2914 (2012).
[Crossref]

J. Tauc, “Optical properties and electronic structure of amorphous Ge and Si,” Mater. Res. Bull. 3(1), 37–46 (1968).
[Crossref]

Mater. Sci. Eng. B (1)

J. Xu, H. Wang, L. Yang, M. Jiang, S. Wei, and T. Zhang, “Low temperature growth of highly crystallized ZnO:Al films by ultrasonic spray pyrolysis from acetylacetone salt,” Mater. Sci. Eng. B 167(3), 182–186 (2010).
[Crossref]

Nature (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Phys. Status Solidi (RRL) (1)

E. Fortunato, P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins, “Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs,” Phys. Status Solidi (RRL) 1(1), R34–R36 (2007).

Superlattices Microstruct. (1)

Y. D. Ko, K. C. Kim, and Y. S. Kim, “Effects of substrate temperature on the Ga-doped ZnO films as an anode material of organic light emitting diodes,” Superlattices Microstruct. 51(6), 933–941 (2012).
[Crossref]

Thin Solid Films (3)

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1–2), 38–41 (2005).
[Crossref]

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[Crossref]

J. S. Park, W. J. Maeng, H. S. Kim, and J. S. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1 XRD patterns of the IGZO films deposited at the growth temperature range from R.T. to 300 °C.
Fig. 2
Fig. 2 SEM images of the IGZO films deposited at the growth temperature of (a) R.T., (b) 50 °C, (c) 100 °C, (d) 150 °C, (e) 200 °C, (f) 250 °C, (g) 300 °C, and (h) cross section of the IGZO film deposited at 300 °C.
Fig. 3
Fig. 3 (a) resistivity, (b) carrier concentration and (c) Hall mobility of the IGZO films deposited at the growth temperature range from R.T. to 300 °C.
Fig. 4
Fig. 4 Transmittance spectrum of the IGZO films deposited at the growth temperature range from R.T. to 300 °C.
Fig. 5
Fig. 5 Tauc plot of the IGZO films deposited at the growth temperature range from R.T. to 300 °C.

Equations (2)

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I= I 0 e αt
(αhv) 2 =β(hv E g )

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