Abstract

Laser molecular beam epitaxy technology has been employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates. After optimizing the growth parameters, (2¯01)-oriented β-Ga2O3 thin film was obtained. Ultraviolet-visible absorption spectrum demonstrates that the prepared β-Ga2O3 thin film shows excellent solar-blind ultraviolet (UV) characteristic with a band gap of 5.02 eV. A prototype photodetector device with a metal-semiconductor-metal structure has been fabricated using high quality β-Ga2O3 film. The device exhibits obvious photoresponse under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetectors.

© 2014 Optical Society of America

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    [Crossref]
  2. L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
    [Crossref] [PubMed]
  3. P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
    [Crossref]
  4. R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
    [Crossref]
  5. Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
    [Crossref]
  6. Z. Huang, W. Weng, S. Chang, C. Chiu, S. Wu, and T. Hsueh, “Ga2O3/AlGaN/GaN heterostructure ultraviolet three-band photodetector,” IEEE Sens. J. 13(9), 3462–3467 (2013).
    [Crossref]
  7. T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates,” Appl. Phys. Express 1(1), 011202 (2008).
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    [Crossref]
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    [Crossref]
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    [Crossref]
  12. G. Sinha, K. Adhikary, and S. Chaudhuri, “Sol-gel derived phase pure α-Ga2O3 nanocrystalline thin film and its optical properties,” J. Cryst. Growth 276(1-2), 204–207 (2005).
    [Crossref]
  13. Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
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    [Crossref]
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    [Crossref]
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  20. J. Narayan and B. Larson, “Domain epitaxy: A unified paradigm for thin film growth,” J. Appl. Phys. 93(1), 278–285 (2003).
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    [Crossref]
  24. N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
    [Crossref]
  25. D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy 95, 237–245 (2013).
    [Crossref]
  26. T. Murphy, K. Moazzami, and J. Phillips, “Trap-related photoconductivity in ZnO epilayers,” J. Electron. Mater. 35(4), 543–549 (2006).
    [Crossref]
  27. P. Ravadgar, R. H. Horng, S. D. Yao, H. Y. Lee, B. R. Wu, S. L. Ou, and L. W. Tu, “Effects of crystallinity and point defects on optoelectronic applications of β-Ga₂O₃ epilayers,” Opt. Express 21(21), 24599–24610 (2013).
    [Crossref] [PubMed]

2013 (4)

Z. Huang, W. Weng, S. Chang, C. Chiu, S. Wu, and T. Hsueh, “Ga2O3/AlGaN/GaN heterostructure ultraviolet three-band photodetector,” IEEE Sens. J. 13(9), 3462–3467 (2013).
[Crossref]

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy 95, 237–245 (2013).
[Crossref]

P. Ravadgar, R. H. Horng, S. D. Yao, H. Y. Lee, B. R. Wu, S. L. Ou, and L. W. Tu, “Effects of crystallinity and point defects on optoelectronic applications of β-Ga₂O₃ epilayers,” Opt. Express 21(21), 24599–24610 (2013).
[Crossref] [PubMed]

2012 (2)

Y. Lv, J. Ma, W. Mi, C. Luan, Z. Zhu, and H. Xiao, “Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique,” Vacuum 86(12), 1850–1854 (2012).
[Crossref]

S. Nakagomi and Y. Kokubun, “Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate,” J. Cryst. Growth 349(1), 12–18 (2012).
[Crossref]

2011 (4)

W. Weng, T. Hsueh, S. Chang, G. Huang, and H. Hsueh, “A beta-Ga2O3/GaN schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 23(7), 444–446 (2011).
[Crossref]

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

L. Guo, X. Shen, G. Zhu, and K. Chen, “Preparation and gas-sensing performance of In2O3 porous nanoplatelets,” Sens. Actuators B Chem. 155(2), 752–758 (2011).
[Crossref]

2010 (2)

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

2009 (1)

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

2008 (1)

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

2007 (3)

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo, and H. M. Chang, “ZnO photoconductive sensors epitaxially grown on sapphire substrates,” Sens. Actuators A Phys. 140(1), 60–64 (2007).
[Crossref]

2006 (3)

T. Murphy, K. Moazzami, and J. Phillips, “Trap-related photoconductivity in ZnO epilayers,” J. Electron. Mater. 35(4), 543–549 (2006).
[Crossref]

Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater. 28(4), 415–417 (2006).
[Crossref]

P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
[Crossref]

2005 (2)

M. Liao, Y. Koide, and J. Alvarez, “Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact,” Appl. Phys. Lett. 87(2), 022105 (2005).
[Crossref]

G. Sinha, K. Adhikary, and S. Chaudhuri, “Sol-gel derived phase pure α-Ga2O3 nanocrystalline thin film and its optical properties,” J. Cryst. Growth 276(1-2), 204–207 (2005).
[Crossref]

2003 (1)

J. Narayan and B. Larson, “Domain epitaxy: A unified paradigm for thin film growth,” J. Appl. Phys. 93(1), 278–285 (2003).
[Crossref]

2002 (2)

H. Ohta, M. Orita, M. Hirano, K. Ueda, and H. Hosono, “Epitaxial growth of transparent conductive oxides,” Int. J. Mod. Phys. B 16(01n02), 173–180 (2002).
[Crossref]

M. Razeghi, “Short-wavelength solar-blind detectors-status, prospects, and markets,” Proc. IEEE 90(6), 1006–1014 (2002).
[Crossref]

1998 (1)

A. Malik, A. Sêco, E. Fortunato, and R. Martins, “New UV-enhanced solar blind optical sensors based on monocrystalline zinc sulphide,” Sens. Actuators A Phys. 67(1-3), 68–71 (1998).
[Crossref]

1990 (1)

M. Fleischer, W. Hanrieder, and H. Meixner, “Stability of semiconducting gallium oxide thin films,” Thin Solid Films 190(1), 93–102 (1990).
[Crossref]

Adhikary, K.

G. Sinha, K. Adhikary, and S. Chaudhuri, “Sol-gel derived phase pure α-Ga2O3 nanocrystalline thin film and its optical properties,” J. Cryst. Growth 276(1-2), 204–207 (2005).
[Crossref]

Alvarez, J.

M. Liao, Y. Koide, and J. Alvarez, “Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact,” Appl. Phys. Lett. 87(2), 022105 (2005).
[Crossref]

Arai, N.

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

Auer, E.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Bando, Y.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Chang, H. M.

S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo, and H. M. Chang, “ZnO photoconductive sensors epitaxially grown on sapphire substrates,” Sens. Actuators A Phys. 140(1), 60–64 (2007).
[Crossref]

Chang, S.

Z. Huang, W. Weng, S. Chang, C. Chiu, S. Wu, and T. Hsueh, “Ga2O3/AlGaN/GaN heterostructure ultraviolet three-band photodetector,” IEEE Sens. J. 13(9), 3462–3467 (2013).
[Crossref]

W. Weng, T. Hsueh, S. Chang, G. Huang, and H. Hsueh, “A beta-Ga2O3/GaN schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 23(7), 444–446 (2011).
[Crossref]

Chang, S. J.

S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo, and H. M. Chang, “ZnO photoconductive sensors epitaxially grown on sapphire substrates,” Sens. Actuators A Phys. 140(1), 60–64 (2007).
[Crossref]

Chang, S. P.

S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo, and H. M. Chang, “ZnO photoconductive sensors epitaxially grown on sapphire substrates,” Sens. Actuators A Phys. 140(1), 60–64 (2007).
[Crossref]

Chaudhuri, S.

G. Sinha, K. Adhikary, and S. Chaudhuri, “Sol-gel derived phase pure α-Ga2O3 nanocrystalline thin film and its optical properties,” J. Cryst. Growth 276(1-2), 204–207 (2005).
[Crossref]

Chen, K.

L. Guo, X. Shen, G. Zhu, and K. Chen, “Preparation and gas-sensing performance of In2O3 porous nanoplatelets,” Sens. Actuators B Chem. 155(2), 752–758 (2011).
[Crossref]

Cheng, F.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Chiou, Y. Z.

S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo, and H. M. Chang, “ZnO photoconductive sensors epitaxially grown on sapphire substrates,” Sens. Actuators A Phys. 140(1), 60–64 (2007).
[Crossref]

Chiu, C.

Z. Huang, W. Weng, S. Chang, C. Chiu, S. Wu, and T. Hsueh, “Ga2O3/AlGaN/GaN heterostructure ultraviolet three-band photodetector,” IEEE Sens. J. 13(9), 3462–3467 (2013).
[Crossref]

Cui, C.

D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy 95, 237–245 (2013).
[Crossref]

Delaunay, J.-J.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Du, J.

Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater. 28(4), 415–417 (2006).
[Crossref]

Du, X.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Endo, F.

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

Fan, J.

Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater. 28(4), 415–417 (2006).
[Crossref]

Fang, G.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Fang, X.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Feng, P.

P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
[Crossref]

Fleischer, M.

M. Fleischer, W. Hanrieder, and H. Meixner, “Stability of semiconducting gallium oxide thin films,” Thin Solid Films 190(1), 93–102 (1990).
[Crossref]

Fortunato, E.

A. Malik, A. Sêco, E. Fortunato, and R. Martins, “New UV-enhanced solar blind optical sensors based on monocrystalline zinc sulphide,” Sens. Actuators A Phys. 67(1-3), 68–71 (1998).
[Crossref]

Fujita, S.

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

Gautam, U. K.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Golberg, D.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Guo, D. Y.

D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy 95, 237–245 (2013).
[Crossref]

Guo, L.

L. Guo, X. Shen, G. Zhu, and K. Chen, “Preparation and gas-sensing performance of In2O3 porous nanoplatelets,” Sens. Actuators B Chem. 155(2), 752–758 (2011).
[Crossref]

Guo, Y.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Hanrieder, W.

M. Fleischer, W. Hanrieder, and H. Meixner, “Stability of semiconducting gallium oxide thin films,” Thin Solid Films 190(1), 93–102 (1990).
[Crossref]

Hirano, M.

H. Ohta, M. Orita, M. Hirano, K. Ueda, and H. Hosono, “Epitaxial growth of transparent conductive oxides,” Int. J. Mod. Phys. B 16(01n02), 173–180 (2002).
[Crossref]

Horng, R. H.

Hosono, H.

H. Ohta, M. Orita, M. Hirano, K. Ueda, and H. Hosono, “Epitaxial growth of transparent conductive oxides,” Int. J. Mod. Phys. B 16(01n02), 173–180 (2002).
[Crossref]

Hou, Y.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Hsueh, H.

W. Weng, T. Hsueh, S. Chang, G. Huang, and H. Hsueh, “A beta-Ga2O3/GaN schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 23(7), 444–446 (2011).
[Crossref]

Hsueh, T.

Z. Huang, W. Weng, S. Chang, C. Chiu, S. Wu, and T. Hsueh, “Ga2O3/AlGaN/GaN heterostructure ultraviolet three-band photodetector,” IEEE Sens. J. 13(9), 3462–3467 (2013).
[Crossref]

W. Weng, T. Hsueh, S. Chang, G. Huang, and H. Hsueh, “A beta-Ga2O3/GaN schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 23(7), 444–446 (2011).
[Crossref]

Huang, G.

W. Weng, T. Hsueh, S. Chang, G. Huang, and H. Hsueh, “A beta-Ga2O3/GaN schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 23(7), 444–446 (2011).
[Crossref]

Huang, Z.

Z. Huang, W. Weng, S. Chang, C. Chiu, S. Wu, and T. Hsueh, “Ga2O3/AlGaN/GaN heterostructure ultraviolet three-band photodetector,” IEEE Sens. J. 13(9), 3462–3467 (2013).
[Crossref]

Ji, Z.

Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater. 28(4), 415–417 (2006).
[Crossref]

Koide, Y.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

M. Liao, Y. Koide, and J. Alvarez, “Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact,” Appl. Phys. Lett. 87(2), 022105 (2005).
[Crossref]

Kokubun, Y.

S. Nakagomi and Y. Kokubun, “Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate,” J. Cryst. Growth 349(1), 12–18 (2012).
[Crossref]

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

Kumar, S. S.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Kuo, C. F.

S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo, and H. M. Chang, “ZnO photoconductive sensors epitaxially grown on sapphire substrates,” Sens. Actuators A Phys. 140(1), 60–64 (2007).
[Crossref]

Kuznetsov, A. Y.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Larson, B.

J. Narayan and B. Larson, “Domain epitaxy: A unified paradigm for thin film growth,” J. Appl. Phys. 93(1), 278–285 (2003).
[Crossref]

Lee, H. Y.

Li, L.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Li, P. G.

D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy 95, 237–245 (2013).
[Crossref]

Li, Q. H.

P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
[Crossref]

Li, Y.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Liao, M.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

M. Liao, Y. Koide, and J. Alvarez, “Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact,” Appl. Phys. Lett. 87(2), 022105 (2005).
[Crossref]

Lin, T. K.

S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo, and H. M. Chang, “ZnO photoconductive sensors epitaxially grown on sapphire substrates,” Sens. Actuators A Phys. 140(1), 60–64 (2007).
[Crossref]

Lin, Y. C.

S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo, and H. M. Chang, “ZnO photoconductive sensors epitaxially grown on sapphire substrates,” Sens. Actuators A Phys. 140(1), 60–64 (2007).
[Crossref]

Liu, N.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Liu, Z.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Lu, C. Y.

S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo, and H. M. Chang, “ZnO photoconductive sensors epitaxially grown on sapphire substrates,” Sens. Actuators A Phys. 140(1), 60–64 (2007).
[Crossref]

Luan, C.

Y. Lv, J. Ma, W. Mi, C. Luan, Z. Zhu, and H. Xiao, “Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique,” Vacuum 86(12), 1850–1854 (2012).
[Crossref]

Lugstein, A.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Lv, Y.

Y. Lv, J. Ma, W. Mi, C. Luan, Z. Zhu, and H. Xiao, “Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique,” Vacuum 86(12), 1850–1854 (2012).
[Crossref]

Ma, J.

Y. Lv, J. Ma, W. Mi, C. Luan, Z. Zhu, and H. Xiao, “Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique,” Vacuum 86(12), 1850–1854 (2012).
[Crossref]

Malik, A.

A. Malik, A. Sêco, E. Fortunato, and R. Martins, “New UV-enhanced solar blind optical sensors based on monocrystalline zinc sulphide,” Sens. Actuators A Phys. 67(1-3), 68–71 (1998).
[Crossref]

Manandhar, S.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Martinez, G.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Martins, R.

A. Malik, A. Sêco, E. Fortunato, and R. Martins, “New UV-enhanced solar blind optical sensors based on monocrystalline zinc sulphide,” Sens. Actuators A Phys. 67(1-3), 68–71 (1998).
[Crossref]

Mei, Z.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Meixner, H.

M. Fleischer, W. Hanrieder, and H. Meixner, “Stability of semiconducting gallium oxide thin films,” Thin Solid Films 190(1), 93–102 (1990).
[Crossref]

Mi, W.

Y. Lv, J. Ma, W. Mi, C. Luan, Z. Zhu, and H. Xiao, “Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique,” Vacuum 86(12), 1850–1854 (2012).
[Crossref]

Miura, K.

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

Moazzami, K.

T. Murphy, K. Moazzami, and J. Phillips, “Trap-related photoconductivity in ZnO epilayers,” J. Electron. Mater. 35(4), 543–549 (2006).
[Crossref]

Murphy, T.

T. Murphy, K. Moazzami, and J. Phillips, “Trap-related photoconductivity in ZnO epilayers,” J. Electron. Mater. 35(4), 543–549 (2006).
[Crossref]

Nakagomi, S.

S. Nakagomi and Y. Kokubun, “Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate,” J. Cryst. Growth 349(1), 12–18 (2012).
[Crossref]

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
[Crossref]

Narayan, J.

J. Narayan and B. Larson, “Domain epitaxy: A unified paradigm for thin film growth,” J. Appl. Phys. 93(1), 278–285 (2003).
[Crossref]

Noor-A-Alam, M.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Ohira, S.

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

Ohta, H.

H. Ohta, M. Orita, M. Hirano, K. Ueda, and H. Hosono, “Epitaxial growth of transparent conductive oxides,” Int. J. Mod. Phys. B 16(01n02), 173–180 (2002).
[Crossref]

Okuno, T.

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

Orita, M.

H. Ohta, M. Orita, M. Hirano, K. Ueda, and H. Hosono, “Epitaxial growth of transparent conductive oxides,” Int. J. Mod. Phys. B 16(01n02), 173–180 (2002).
[Crossref]

Oshima, T.

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

Ou, S. L.

Phillips, J.

T. Murphy, K. Moazzami, and J. Phillips, “Trap-related photoconductivity in ZnO epilayers,” J. Electron. Mater. 35(4), 543–549 (2006).
[Crossref]

Ramana, C. V.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Ravadgar, P.

Razeghi, M.

M. Razeghi, “Short-wavelength solar-blind detectors-status, prospects, and markets,” Proc. IEEE 90(6), 1006–1014 (2002).
[Crossref]

Rubio, E. J.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Sêco, A.

A. Malik, A. Sêco, E. Fortunato, and R. Martins, “New UV-enhanced solar blind optical sensors based on monocrystalline zinc sulphide,” Sens. Actuators A Phys. 67(1-3), 68–71 (1998).
[Crossref]

Shen, X.

L. Guo, X. Shen, G. Zhu, and K. Chen, “Preparation and gas-sensing performance of In2O3 porous nanoplatelets,” Sens. Actuators B Chem. 155(2), 752–758 (2011).
[Crossref]

Shutthanandan, V.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Sinha, G.

G. Sinha, K. Adhikary, and S. Chaudhuri, “Sol-gel derived phase pure α-Ga2O3 nanocrystalline thin film and its optical properties,” J. Cryst. Growth 276(1-2), 204–207 (2005).
[Crossref]

Suzuki, N.

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

Suzuki, R.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Thevuthasan, S.

S. S. Kumar, E. J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, “Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films,” J. Phys. Chem. C 117(8), 4194–4200 (2013).
[Crossref]

Tokizono, T.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Tu, L. W.

Ueda, K.

H. Ohta, M. Orita, M. Hirano, K. Ueda, and H. Hosono, “Epitaxial growth of transparent conductive oxides,” Int. J. Mod. Phys. B 16(01n02), 173–180 (2002).
[Crossref]

Wang, F.

D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy 95, 237–245 (2013).
[Crossref]

Wang, J. B.

D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy 95, 237–245 (2013).
[Crossref]

Wang, T. H.

P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
[Crossref]

Wang, W.

Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater. 28(4), 415–417 (2006).
[Crossref]

Weng, W.

Z. Huang, W. Weng, S. Chang, C. Chiu, S. Wu, and T. Hsueh, “Ga2O3/AlGaN/GaN heterostructure ultraviolet three-band photodetector,” IEEE Sens. J. 13(9), 3462–3467 (2013).
[Crossref]

W. Weng, T. Hsueh, S. Chang, G. Huang, and H. Hsueh, “A beta-Ga2O3/GaN schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 23(7), 444–446 (2011).
[Crossref]

Wu, B. R.

Wu, S.

Z. Huang, W. Weng, S. Chang, C. Chiu, S. Wu, and T. Hsueh, “Ga2O3/AlGaN/GaN heterostructure ultraviolet three-band photodetector,” IEEE Sens. J. 13(9), 3462–3467 (2013).
[Crossref]

Xiao, H.

Y. Lv, J. Ma, W. Mi, C. Luan, Z. Zhu, and H. Xiao, “Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique,” Vacuum 86(12), 1850–1854 (2012).
[Crossref]

Xue, Q.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Yamada, I.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Yao, S. D.

Yuan, L.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Yuan, S. G.

D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy 95, 237–245 (2013).
[Crossref]

Zeng, W.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zhai, T.

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
[Crossref] [PubMed]

Zhang, J. Y.

P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
[Crossref]

Zhang, K. D.

D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy 95, 237–245 (2013).
[Crossref]

Zhang, T.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Zhang, Z.

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Zhao, X.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zheng, Q.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zhong, M.

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[Crossref]

Zhong, X. L.

D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy 95, 237–245 (2013).
[Crossref]

Zhou, H.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

Zhou, Y. C.

D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy 95, 237–245 (2013).
[Crossref]

Zhu, G.

L. Guo, X. Shen, G. Zhu, and K. Chen, “Preparation and gas-sensing performance of In2O3 porous nanoplatelets,” Sens. Actuators B Chem. 155(2), 752–758 (2011).
[Crossref]

Zhu, Z.

Y. Lv, J. Ma, W. Mi, C. Luan, Z. Zhu, and H. Xiao, “Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique,” Vacuum 86(12), 1850–1854 (2012).
[Crossref]

Zou, X.

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
[Crossref]

ACS Appl. Mater. Interfaces (1)

N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, “Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction,” ACS Appl. Mater. Interfaces 2(7), 1973–1979 (2010).
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Adv. Funct. Mater. (1)

Y. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide, I. Yamada, and J.-J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
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Adv. Mater. (1)

X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
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Appl. Phys. Express (1)

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates,” Appl. Phys. Express 1(1), 011202 (2008).
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Appl. Phys. Lett. (4)

P. Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, “Individual β-Ga2O3 nanowires as solar-blind photodetectors,” Appl. Phys. Lett. 88(15), 153107 (2006).
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R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
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M. Liao, Y. Koide, and J. Alvarez, “Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact,” Appl. Phys. Lett. 87(2), 022105 (2005).
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Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, “Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors,” Appl. Phys. Lett. 90(3), 031912 (2007).
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IEEE Photon. Technol. Lett. (1)

W. Weng, T. Hsueh, S. Chang, G. Huang, and H. Hsueh, “A beta-Ga2O3/GaN schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 23(7), 444–446 (2011).
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IEEE Sens. J. (1)

Z. Huang, W. Weng, S. Chang, C. Chiu, S. Wu, and T. Hsueh, “Ga2O3/AlGaN/GaN heterostructure ultraviolet three-band photodetector,” IEEE Sens. J. 13(9), 3462–3467 (2013).
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Int. J. Mod. Phys. B (1)

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S. Nakagomi and Y. Kokubun, “Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate,” J. Cryst. Growth 349(1), 12–18 (2012).
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T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
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Nanoscale (1)

L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, “Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts,” Nanoscale 3(3), 1120–1126 (2011).
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Z. Ji, J. Du, J. Fan, and W. Wang, “Gallium oxide films for filter and solar-blind UV detector,” Opt. Mater. 28(4), 415–417 (2006).
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M. Razeghi, “Short-wavelength solar-blind detectors-status, prospects, and markets,” Proc. IEEE 90(6), 1006–1014 (2002).
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L. Guo, X. Shen, G. Zhu, and K. Chen, “Preparation and gas-sensing performance of In2O3 porous nanoplatelets,” Sens. Actuators B Chem. 155(2), 752–758 (2011).
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D. Y. Guo, J. B. Wang, C. Cui, P. G. Li, X. L. Zhong, F. Wang, S. G. Yuan, K. D. Zhang, and Y. C. Zhou, “ZnO@TiO2 core-shell nanorod arrays with enhanced photoelectrochemical performance,” Sol. Energy 95, 237–245 (2013).
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M. Fleischer, W. Hanrieder, and H. Meixner, “Stability of semiconducting gallium oxide thin films,” Thin Solid Films 190(1), 93–102 (1990).
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Vacuum (1)

Y. Lv, J. Ma, W. Mi, C. Luan, Z. Zhu, and H. Xiao, “Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique,” Vacuum 86(12), 1850–1854 (2012).
[Crossref]

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Figures (8)

Fig. 1
Fig. 1

Schematic diagram of the fabricated β-Ga2O3 thin film MSM structure photodetector.

Fig. 2
Fig. 2

XRD patterns of the Ga2O3 thin films deposited at various substrate temperatures and oxygen pressures.

Fig. 3
Fig. 3

Schematic diagram of geometrical epitaxial relationship between Al2O3 and β-Ga2O3 ( 2 ¯ 01 ) .The lattices of film and substrate are deliberately offset slightly for clarity.

Fig. 4
Fig. 4

SEM (a) and AFM (b) images of the β-Ga2O3 thin film.

Fig. 5
Fig. 5

UV-vis absorbance spectrum of the β-Ga2O3 thin film with the plot of (αhν)2 versus for the sample in inset.

Fig. 6
Fig. 6

I-V characteristics curve of the β-Ga2O3 photodetector with the linear (a) and logarithmic (b) coordinate in dark, under 365 nm light, and under 254 nm light.

Fig. 7
Fig. 7

(a) Time-dependent photoresponse of the β-Ga2O3 photodetector to UV light illumination under an applied bias of 10 V; (b), (c) Experimental curve and fitted curve of the current rise and decay process to 254 nm and 365 nm illuminations, respectively.

Fig. 8
Fig. 8

Schematic diagram illustrating the carrier transport mechanisms in the β-Ga2O3 photodetector.

Equations (3)

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( α h ν ) 2 = B ( h ν E g )
α =[1/d]ln(10 A )
I= I 0 +C e t τ 1 +D e t τ 2

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