Abstract

Near-infrared (NIR) luminescent Si-rich oxynitride nanostructures were fabricated by very high frequency plasma enhanced chemical vapor deposition followed by thermal annealing. By increasing the annealing temperature from 600 °C to 1100 °C, the intensity of NIR emission can be remarkably improved by more than three times. Si nanocrystals (NCs) with diameters ranging from 2 nm to 4 nm are found to play a decisive role in the enhanced NIR emission. The PLE spectra indicate a band-to-band excitation process with a quantum confinement feature in Si nanocrystals. Combining with the infrared absorption spectra and X-ray photoelectron spectra analyses, it is suggested that the photoexcited carriers for the enhanced NIR emission mainly originate in the quantum confined Si NCs, while their radiative recombination occurs in the surface states related to N-Si-O bonds.

© 2014 Optical Society of America

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    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef] [PubMed]
  4. R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
    [CrossRef] [PubMed]
  5. C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent Structures,” Adv. Mater.22(44), 5058–5062 (2010).
    [CrossRef] [PubMed]
  6. C. H. Cheng, Y. C. Lien, C. L. Wu, and G. R. Lin, “Mutlicolor electroluminescent Si quantum dots embedded in SiOx thin film MOSLED with 2.4% external quantum efficiency,” Opt. Express21(1), 391–403 (2013).
    [CrossRef] [PubMed]
  7. Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
    [CrossRef]
  8. G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
    [CrossRef]
  9. J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
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    [CrossRef]
  11. Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
    [CrossRef]
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  13. L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett.98(6), 061105 (2011).
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  20. R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
    [CrossRef]
  21. X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
    [CrossRef]
  22. L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er 3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett.103(7), 071101 (2013).
    [CrossRef]
  23. R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express4(2), 205–212 (2014).
    [CrossRef]
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    [CrossRef]
  25. H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
    [CrossRef]
  26. H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).
  27. T.-Y. Kim, N.-M. Park, K.-H. Kim, G. Y. Sung, Y.-W. Ok, T.-Y. Seong, and C.-J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett.85(22), 5355–5357 (2004).
    [CrossRef]
  28. X. Pi, X. Chen, Y. Ma, and D. Yang, “Optical absorption and emission of nitrogen-doped silicon nanocrystals,” Nanoscale3(11), 4584–4588 (2011).
    [CrossRef] [PubMed]
  29. P. Cova, S. Poulin, O. Grenier, and R. A. Masut, “A method for the analysis of multiphase bonding structures in amorphous SiOxNy films,” J. Appl. Phys.97(7), 073518 (2005).
    [CrossRef]
  30. L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
    [CrossRef]
  31. J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett.97(22), 221113 (2010).
    [CrossRef]

2014

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in Si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express4(2), 205–212 (2014).
[CrossRef]

2013

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
[CrossRef]

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er 3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett.103(7), 071101 (2013).
[CrossRef]

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron.19(3), 4602504 (2013).
[CrossRef]

C. H. Cheng, Y. C. Lien, C. L. Wu, and G. R. Lin, “Mutlicolor electroluminescent Si quantum dots embedded in SiOx thin film MOSLED with 2.4% external quantum efficiency,” Opt. Express21(1), 391–403 (2013).
[CrossRef] [PubMed]

2012

2011

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett.98(6), 061105 (2011).
[CrossRef]

X. Pi, X. Chen, Y. Ma, and D. Yang, “Optical absorption and emission of nitrogen-doped silicon nanocrystals,” Nanoscale3(11), 4584–4588 (2011).
[CrossRef] [PubMed]

2010

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett.97(22), 221113 (2010).
[CrossRef]

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent Structures,” Adv. Mater.22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

G. Lin, Y. Pai, C. Lin, and C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

2009

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

2008

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
[CrossRef]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

2007

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

2006

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

A. Tewary, R. D. Kekatpure, and M. L. Brongersma, “Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO2 laser annealing,” Appl. Phys. Lett.88(9), 093114 (2006).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

2005

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
[CrossRef] [PubMed]

P. Cova, S. Poulin, O. Grenier, and R. A. Masut, “A method for the analysis of multiphase bonding structures in amorphous SiOxNy films,” J. Appl. Phys.97(7), 073518 (2005).
[CrossRef]

2004

T.-Y. Kim, N.-M. Park, K.-H. Kim, G. Y. Sung, Y.-W. Ok, T.-Y. Seong, and C.-J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett.85(22), 5355–5357 (2004).
[CrossRef]

2003

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
[CrossRef]

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

2001

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

T. Noma, K. S. Seol, H. Kato, M. Fujimaki, and Y. Ohki, “Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride,” Appl. Phys. Lett.79(13), 1995–1997 (2001).
[CrossRef]

2000

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

1992

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett.61(17), 2069–2071 (1992).
[CrossRef]

Abramov, A.

J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett.97(22), 221113 (2010).
[CrossRef]

Atwater, H. A.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
[CrossRef] [PubMed]

Basu, S. N.

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
[CrossRef]

Bourianoff, G. I.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
[CrossRef] [PubMed]

Brongersma, M. L.

A. Tewary, R. D. Kekatpure, and M. L. Brongersma, “Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO2 laser annealing,” Appl. Phys. Lett.88(9), 093114 (2006).
[CrossRef]

Cao, L.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

Cao, Z. X.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

Cen, Z. H.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Chen, C.

G. Lin, Y. Pai, C. Lin, and C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Chen, D.

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

Chen, K.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett.61(17), 2069–2071 (1992).
[CrossRef]

Chen, S.

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

Chen, T. P.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Chen, X.

X. Pi, X. Chen, Y. Ma, and D. Yang, “Optical absorption and emission of nitrogen-doped silicon nanocrystals,” Nanoscale3(11), 4584–4588 (2011).
[CrossRef] [PubMed]

Cheng, C. H.

Choi, C. J.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Choi, C.-J.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent Structures,” Adv. Mater.22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

T.-Y. Kim, N.-M. Park, K.-H. Kim, G. Y. Sung, Y.-W. Ok, T.-Y. Seong, and C.-J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett.85(22), 5355–5357 (2004).
[CrossRef]

Chou, L. J.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Chu, P. K.

Chueh, Y. L.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Cova, P.

P. Cova, S. Poulin, O. Grenier, and R. A. Masut, “A method for the analysis of multiphase bonding structures in amorphous SiOxNy films,” J. Appl. Phys.97(7), 073518 (2005).
[CrossRef]

Dal Negro, L.

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
[CrossRef]

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Ding, H.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Ding, L.

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett.98(6), 061105 (2011).
[CrossRef]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Dong, H.

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

Feng, D.

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett.61(17), 2069–2071 (1992).
[CrossRef]

Franzò, G.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Fujimaki, M.

T. Noma, K. S. Seol, H. Kato, M. Fujimaki, and Y. Ohki, “Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride,” Appl. Phys. Lett.79(13), 1995–1997 (2001).
[CrossRef]

Fung, S.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Galli, G.

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

Goh, W. P.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Grenier, O.

P. Cova, S. Poulin, O. Grenier, and R. A. Masut, “A method for the analysis of multiphase bonding structures in amorphous SiOxNy films,” J. Appl. Phys.97(7), 073518 (2005).
[CrossRef]

Guo, Y.

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in Si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express4(2), 205–212 (2014).
[CrossRef]

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
[CrossRef]

Guo, Y. Q.

Hamel, S.

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

Han, P.

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

Huang, R.

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in Si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express4(2), 205–212 (2014).
[CrossRef]

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
[CrossRef]

R. Huang, J. Song, X. Wang, Y. Q. Guo, C. Song, Z. H. Zheng, X. L. Wu, and P. K. Chu, “Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride,” Opt. Lett.37(4), 692–694 (2012).
[CrossRef] [PubMed]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

Huang, X.

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett.61(17), 2069–2071 (1992).
[CrossRef]

Huh, C.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent Structures,” Adv. Mater.22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

Jin, L.

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er 3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett.103(7), 071101 (2013).
[CrossRef]

Kamyab, L.

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett.98(6), 061105 (2011).
[CrossRef]

Kashio, N.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
[CrossRef]

Kato, H.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
[CrossRef]

T. Noma, K. S. Seol, H. Kato, M. Fujimaki, and Y. Ohki, “Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride,” Appl. Phys. Lett.79(13), 1995–1997 (2001).
[CrossRef]

Kekatpure, R. D.

A. Tewary, R. D. Kekatpure, and M. L. Brongersma, “Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO2 laser annealing,” Appl. Phys. Lett.88(9), 093114 (2006).
[CrossRef]

Kim, B. K.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent Structures,” Adv. Mater.22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

Kim, K.-H.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent Structures,” Adv. Mater.22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

T.-Y. Kim, N.-M. Park, K.-H. Kim, G. Y. Sung, Y.-W. Ok, T.-Y. Seong, and C.-J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett.85(22), 5355–5357 (2004).
[CrossRef]

Kim, T.-Y.

T.-Y. Kim, N.-M. Park, K.-H. Kim, G. Y. Sung, Y.-W. Ok, T.-Y. Seong, and C.-J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett.85(22), 5355–5357 (2004).
[CrossRef]

Kim, W.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent Structures,” Adv. Mater.22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

Kimerling, L. C.

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

Ko, H.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent Structures,” Adv. Mater.22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

Li, D.

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er 3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett.103(7), 071101 (2013).
[CrossRef]

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron.19(3), 4602504 (2013).
[CrossRef]

Li, H.

Li, R.

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
[CrossRef]

Li, W.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

Lien, Y. C.

Lin, C.

G. Lin, Y. Pai, C. Lin, and C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Lin, C. J.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Lin, C. K.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Lin, G.

G. Lin, Y. Pai, C. Lin, and C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Lin, G. R.

C. H. Cheng, Y. C. Lien, C. L. Wu, and G. R. Lin, “Mutlicolor electroluminescent Si quantum dots embedded in SiOx thin film MOSLED with 2.4% external quantum efficiency,” Opt. Express21(1), 391–403 (2013).
[CrossRef] [PubMed]

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Lin, H.

Lin, Z.

R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express4(2), 205–212 (2014).
[CrossRef]

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in Si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in Si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

Liu, Y.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Liu, Z.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Lo, G.-Q.

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett.98(6), 061105 (2011).
[CrossRef]

Ma, Y.

X. Pi, X. Chen, Y. Ma, and D. Yang, “Optical absorption and emission of nitrogen-doped silicon nanocrystals,” Nanoscale3(11), 4584–4588 (2011).
[CrossRef] [PubMed]

Ma, Z.

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

Masut, R. A.

P. Cova, S. Poulin, O. Grenier, and R. A. Masut, “A method for the analysis of multiphase bonding structures in amorphous SiOxNy films,” J. Appl. Phys.97(7), 073518 (2005).
[CrossRef]

Mazzoleni, C.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Mu, W.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

Noma, T.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
[CrossRef]

T. Noma, K. S. Seol, H. Kato, M. Fujimaki, and Y. Ohki, “Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride,” Appl. Phys. Lett.79(13), 1995–1997 (2001).
[CrossRef]

Ohki, Y.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
[CrossRef]

T. Noma, K. S. Seol, H. Kato, M. Fujimaki, and Y. Ohki, “Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride,” Appl. Phys. Lett.79(13), 1995–1997 (2001).
[CrossRef]

Ok, Y.-W.

T.-Y. Kim, N.-M. Park, K.-H. Kim, G. Y. Sung, Y.-W. Ok, T.-Y. Seong, and C.-J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett.85(22), 5355–5357 (2004).
[CrossRef]

Pai, Y.

G. Lin, Y. Pai, C. Lin, and C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Park, N. M.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Park, N.-M.

T.-Y. Kim, N.-M. Park, K.-H. Kim, G. Y. Sung, Y.-W. Ok, T.-Y. Seong, and C.-J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett.85(22), 5355–5357 (2004).
[CrossRef]

Park, S. J.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Pavesi, L.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Pi, X.

X. Pi, X. Chen, Y. Ma, and D. Yang, “Optical absorption and emission of nitrogen-doped silicon nanocrystals,” Nanoscale3(11), 4584–4588 (2011).
[CrossRef] [PubMed]

Poulin, S.

P. Cova, S. Poulin, O. Grenier, and R. A. Masut, “A method for the analysis of multiphase bonding structures in amorphous SiOxNy films,” J. Appl. Phys.97(7), 073518 (2005).
[CrossRef]

Priolo, F.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Qian, B.

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

Que, Q.

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron.19(3), 4602504 (2013).
[CrossRef]

Roca i Cabarrocas, P.

J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett.97(22), 221113 (2010).
[CrossRef]

Rusli, M. B. Yu.

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett.98(6), 061105 (2011).
[CrossRef]

Seol, K. S.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
[CrossRef]

T. Noma, K. S. Seol, H. Kato, M. Fujimaki, and Y. Ohki, “Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride,” Appl. Phys. Lett.79(13), 1995–1997 (2001).
[CrossRef]

Seong, T. Y.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Seong, T.-Y.

T.-Y. Kim, N.-M. Park, K.-H. Kim, G. Y. Sung, Y.-W. Ok, T.-Y. Seong, and C.-J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett.85(22), 5355–5357 (2004).
[CrossRef]

Song, C.

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in Si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express4(2), 205–212 (2014).
[CrossRef]

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
[CrossRef]

R. Huang, J. Song, X. Wang, Y. Q. Guo, C. Song, Z. H. Zheng, X. L. Wu, and P. K. Chu, “Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride,” Opt. Lett.37(4), 692–694 (2012).
[CrossRef] [PubMed]

Song, J.

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in Si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express4(2), 205–212 (2014).
[CrossRef]

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
[CrossRef]

R. Huang, J. Song, X. Wang, Y. Q. Guo, C. Song, Z. H. Zheng, X. L. Wu, and P. K. Chu, “Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride,” Opt. Lett.37(4), 692–694 (2012).
[CrossRef] [PubMed]

Suendo, V.

J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett.97(22), 221113 (2010).
[CrossRef]

Sun, S.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

Sung, G. Y.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent Structures,” Adv. Mater.22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

T.-Y. Kim, N.-M. Park, K.-H. Kim, G. Y. Sung, Y.-W. Ok, T.-Y. Seong, and C.-J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett.85(22), 5355–5357 (2004).
[CrossRef]

Tewary, A.

A. Tewary, R. D. Kekatpure, and M. L. Brongersma, “Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO2 laser annealing,” Appl. Phys. Lett.88(9), 093114 (2006).
[CrossRef]

Walters, R. J.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
[CrossRef] [PubMed]

Wang, D.

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Wang, F.

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[CrossRef]

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[CrossRef]

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[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

Wang, Y. G.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

Wang, Y. Q.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

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J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
[CrossRef]

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L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
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Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
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Wu, X. L.

Xu, J.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
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H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
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[CrossRef]

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Yang, D.

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er 3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett.103(7), 071101 (2013).
[CrossRef]

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron.19(3), 4602504 (2013).
[CrossRef]

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[CrossRef] [PubMed]

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Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

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L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

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J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett.97(22), 221113 (2010).
[CrossRef]

Zhang, P.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

Zheng, Z. H.

Zhu, F. R.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
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Adv. Mater.

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[CrossRef] [PubMed]

Appl. Phys. Lett.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

T.-Y. Kim, N.-M. Park, K.-H. Kim, G. Y. Sung, Y.-W. Ok, T.-Y. Seong, and C.-J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett.85(22), 5355–5357 (2004).
[CrossRef]

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

J. Wang, V. Suendo, A. Abramov, L. Yu, and P. Roca i Cabarrocas, “Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism,” Appl. Phys. Lett.97(22), 221113 (2010).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett.61(17), 2069–2071 (1992).
[CrossRef]

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
[CrossRef]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
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G. Lin, Y. Pai, C. Lin, and C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
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[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
[CrossRef]

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er 3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett.103(7), 071101 (2013).
[CrossRef]

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F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron.19(3), 4602504 (2013).
[CrossRef]

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and Alternating-current Driving Si Quantum Dots-based Light Emitting Device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in Si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
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G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
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Nanoscale

X. Pi, X. Chen, Y. Ma, and D. Yang, “Optical absorption and emission of nitrogen-doped silicon nanocrystals,” Nanoscale3(11), 4584–4588 (2011).
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Nat. Mater.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
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Phys. Status Solidi

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

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Figures (5)

Fig. 1
Fig. 1

PL spectra obtained from (a) pristine and (b) annealed silicon oxynitride samples, respectively. The PL measurements were carried out using a He-Cd laser (325 nm) as the excitation source.

Fig. 2
Fig. 2

(a) Raman spectra of pristine and annealed silicon oxynitride samples, (b) cross-sectional HRTEM image of the sample annealed at 1100 °C.

Fig. 3
Fig. 3

PL spectra of sample annealed at 1100 °C, excited by the wavelengths of 325 nm, 350 nm, 375 nm, and 400 nm from Xe lamp, respectively.

Fig. 4
Fig. 4

(a) FTIR absorption spectra of pristine and annealed samples. (b) The experimental Si 2p spectra (dotted lines) and component peaks (green lines) obtained from the spectral deconvolution for the as-deposited and annealed films.

Fig. 5
Fig. 5

(a) PLE spectra of pristine and annealed silicon oxynitride samples, taken by monitoring at 885 nm. (b) PLE spectra of sample annealed at 1100 °C, taken by monitoring at 885 nm, 910 nm, 923 nm, and 935 nm emission wavelengths.

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