Abstract

Strong tunable photoluminescence (PL) from silicon oxynitride materials have been demonstrated by modulating the oxygen content. The increase of oxygen content in the films from 8% to 61% results in red, orange-yellow and white switching PL. The change in PL characteristics of these films is ascribed to the variation of defect luminescent centers as well as the evolution of dominant phase structures changing from silicon nitride to silicon oxynitride and silicon oxide. The intense PL intensity is suggested from the nanoseconds recombination lifetime as well as the alleviation of internal stress in silicon oxynitride.

© 2014 Optical Society of America

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    [CrossRef] [PubMed]
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    [CrossRef]
  5. P. Zhu, G. Liu, J. Zhang, and N. Tansu, “FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays,” J. Disp. Technol.9(5), 317–323 (2013).
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    [CrossRef]
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    [CrossRef]
  28. R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
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  29. X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
    [CrossRef]
  30. L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er 3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett.103(7), 071101 (2013).
    [CrossRef]
  31. G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
    [CrossRef]
  32. R. Huang, S. Xu, Y. Guo, W. Guo, X. Wang, C. Song, J. Song, L. Wang, K. M. Ho, and N. Wang, “Luminescence enhancement of ZnO-core/a-SiNx: H-shell nanorod arrays,” Opt. Express21(5), 5891–5896 (2013).
    [CrossRef] [PubMed]
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  34. S. P. Singh, P. Srivastava, S. Ghosh, S. A. Khan, C. J. Oton, and G. V. Prakash, “Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films,” Scr. Mater.63(6), 605–608 (2010).
    [CrossRef]
  35. H. Wong and V. A. Gritsenko, “Defects in silicon oxynitride gate dielectric films,” Microelectron. Reliab.42(4-5), 597–605 (2002).
    [CrossRef]
  36. A. V. Kabashin, J. P. Sylvestre, S. Patskovsky, and M. Meunier, “Correlation between photoluminescence properties and morphology of laser-ablated Si/SiOx nanostructured films,” J. Appl. Phys.91(5), 3248–3254 (2002).
    [CrossRef]
  37. T. Noma, K. S. Seol, H. Kato, M. Fujimaki, and Y. Ohki, “Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride,” Appl. Phys. Lett.79(13), 1995–1997 (2001).
    [CrossRef]
  38. K. H. Lin, S. C. Liou, W. L. Chen, C. L. Wu, G. R. Lin, and Y. M. Chang, “Tunable and stable UV-NIR photoluminescence from annealed SiOx with Si nanoparticles,” Opt. Express21(20), 23416–23424 (2013).
    [CrossRef] [PubMed]
  39. L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
    [CrossRef]
  40. H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
    [CrossRef]
  41. C. L. Wu and G. R. Lin, “Power gain modeling of Si quantum dots embedded in a SiOx waveguide amplifier with inhomogeneous broadened spontaneous emission,” IEEE J. Sel. Top. Quantum Electron.19(5), 3000109 (2013).
  42. H. L. Hao and W. Z. Shen, “Identification and control of the origin of photoluminescence from silicon quantum dots,” Nanotechnology19(45), 455704 (2008).
    [CrossRef] [PubMed]

2014 (2)

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

2013 (12)

C. Song, R. Huang, X. Wang, Y. Guo, and J. Song, “Tunable red light emission from a-Si:H/a-SiNx multilayers,” Opt. Mater. Express3(5), 664–670 (2013).
[CrossRef]

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron.19(3), 4602504 (2013).
[CrossRef]

R. Huang, S. Xu, Y. Guo, W. Guo, X. Wang, C. Song, J. Song, L. Wang, K. M. Ho, and N. Wang, “Luminescence enhancement of ZnO-core/a-SiNx: H-shell nanorod arrays,” Opt. Express21(5), 5891–5896 (2013).
[CrossRef] [PubMed]

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
[CrossRef]

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er 3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett.103(7), 071101 (2013).
[CrossRef]

K. H. Lin, S. C. Liou, W. L. Chen, C. L. Wu, G. R. Lin, and Y. M. Chang, “Tunable and stable UV-NIR photoluminescence from annealed SiOx with Si nanoparticles,” Opt. Express21(20), 23416–23424 (2013).
[CrossRef] [PubMed]

H. Zhao, G. Liu, J. Zhang, R. A. Arif, and N. Tansu, “Analysis of internal quantum efficiency and current injection efficiency in Ш-Nitride light-emitting diodes,” J. Disp. Technol.9(4), 212–225 (2013).
[CrossRef]

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett.110(17), 177406 (2013).
[CrossRef] [PubMed]

C. Tan, J. Zhang, X. Li, G. Liu, B. Tayo, and N. Tansu, “First-principle electronic properties of dilute-As GaNAs alloy for visible light emitters,” J. Disp. Technol.9(4), 272–279 (2013).
[CrossRef]

P. Zhu, G. Liu, J. Zhang, and N. Tansu, “FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays,” J. Disp. Technol.9(5), 317–323 (2013).
[CrossRef]

X.-H. Li, P. Zhu, G. Liu, J. Zhang, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of Ш-Nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays,” J. Disp. Technol.9(5), 324–332 (2013).
[CrossRef]

C. L. Wu and G. R. Lin, “Power gain modeling of Si quantum dots embedded in a SiOx waveguide amplifier with inhomogeneous broadened spontaneous emission,” IEEE J. Sel. Top. Quantum Electron.19(5), 3000109 (2013).

2012 (3)

J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

A. Rodriguez, J. Arenas, and J. C. Alonso, “Photoluminescence mechanisms in silicon quantum dots embedded in nanometric chlorinated-silicon nitride films,” J. Lumin.132(9), 2385–2389 (2012).
[CrossRef]

R. Huang, J. Song, X. Wang, Y. Q. Guo, C. Song, Z. H. Zheng, X. L. Wu, and P. K. Chu, “Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride,” Opt. Lett.37(4), 692–694 (2012).
[CrossRef] [PubMed]

2011 (1)

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett.98(6), 061105 (2011).
[CrossRef]

2010 (4)

G. Lin, Y. Pai, C. Lin, and C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

S. P. Singh, P. Srivastava, S. Ghosh, S. A. Khan, C. J. Oton, and G. V. Prakash, “Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films,” Scr. Mater.63(6), 605–608 (2010).
[CrossRef]

G. R. Lin, C. W. Lian, C. L. Wu, and Y. H. Lin, “Gain analysis of optically-pumped Si nanocrystal waveguide amplifiers on silicon substrate,” Opt. Express18(9), 9213–9219 (2010).
[CrossRef] [PubMed]

2009 (1)

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

2008 (2)

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

H. L. Hao and W. Z. Shen, “Identification and control of the origin of photoluminescence from silicon quantum dots,” Nanotechnology19(45), 455704 (2008).
[CrossRef] [PubMed]

2007 (3)

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

G. R. Lin, C. J. Lin, and H. C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett.91(9), 093122 (2007).
[CrossRef]

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” Jpn. J. Appl. Phys.46(35), L833–L835 (2007).
[CrossRef]

2006 (3)

A. Tewary, R. D. Kekatpure, and M. L. Brongersma, “Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO2 laser annealing,” Appl. Phys. Lett.88(9), 093114 (2006).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

2005 (2)

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
[CrossRef] [PubMed]

2003 (3)

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83, 3474–3476 (2003).

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
[CrossRef]

2002 (2)

H. Wong and V. A. Gritsenko, “Defects in silicon oxynitride gate dielectric films,” Microelectron. Reliab.42(4-5), 597–605 (2002).
[CrossRef]

A. V. Kabashin, J. P. Sylvestre, S. Patskovsky, and M. Meunier, “Correlation between photoluminescence properties and morphology of laser-ablated Si/SiOx nanostructured films,” J. Appl. Phys.91(5), 3248–3254 (2002).
[CrossRef]

2001 (2)

T. Noma, K. S. Seol, H. Kato, M. Fujimaki, and Y. Ohki, “Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride,” Appl. Phys. Lett.79(13), 1995–1997 (2001).
[CrossRef]

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

2000 (1)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

1992 (1)

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett.61(17), 2069–2071 (1992).
[CrossRef]

Alonso, J. C.

A. Rodriguez, J. Arenas, and J. C. Alonso, “Photoluminescence mechanisms in silicon quantum dots embedded in nanometric chlorinated-silicon nitride films,” J. Lumin.132(9), 2385–2389 (2012).
[CrossRef]

Arenas, J.

A. Rodriguez, J. Arenas, and J. C. Alonso, “Photoluminescence mechanisms in silicon quantum dots embedded in nanometric chlorinated-silicon nitride films,” J. Lumin.132(9), 2385–2389 (2012).
[CrossRef]

Arif, R. A.

H. Zhao, G. Liu, J. Zhang, R. A. Arif, and N. Tansu, “Analysis of internal quantum efficiency and current injection efficiency in Ш-Nitride light-emitting diodes,” J. Disp. Technol.9(4), 212–225 (2013).
[CrossRef]

Atwater, H. A.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
[CrossRef] [PubMed]

Bourianoff, G. I.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
[CrossRef] [PubMed]

Brongersma, M. L.

A. Tewary, R. D. Kekatpure, and M. L. Brongersma, “Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO2 laser annealing,” Appl. Phys. Lett.88(9), 093114 (2006).
[CrossRef]

Cao, L.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83, 3474–3476 (2003).

Cao, Z. X.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83, 3474–3476 (2003).

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

Cen, Z. H.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Chang, Y. M.

Chen, C.

G. Lin, Y. Pai, C. Lin, and C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Chen, D.

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

Chen, K.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett.61(17), 2069–2071 (1992).
[CrossRef]

Chen, S.

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

Chen, T. P.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Chen, W. L.

Choi, C. J.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Chou, L. J.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Chu, P. K.

Chueh, Y. L.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Dal Negro, L.

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Ding, H.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Ding, L.

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett.98(6), 061105 (2011).
[CrossRef]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Dong, H.

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

Ee, Y.-K.

X.-H. Li, P. Zhu, G. Liu, J. Zhang, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of Ш-Nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays,” J. Disp. Technol.9(5), 324–332 (2013).
[CrossRef]

Feng, D.

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett.61(17), 2069–2071 (1992).
[CrossRef]

Franzò, G.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Fujimaki, M.

T. Noma, K. S. Seol, H. Kato, M. Fujimaki, and Y. Ohki, “Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride,” Appl. Phys. Lett.79(13), 1995–1997 (2001).
[CrossRef]

Fung, S.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Galli, G.

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

Ghosh, S.

S. P. Singh, P. Srivastava, S. Ghosh, S. A. Khan, C. J. Oton, and G. V. Prakash, “Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films,” Scr. Mater.63(6), 605–608 (2010).
[CrossRef]

Gilchrist, J. F.

X.-H. Li, P. Zhu, G. Liu, J. Zhang, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of Ш-Nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays,” J. Disp. Technol.9(5), 324–332 (2013).
[CrossRef]

Goh, W. P.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Gritsenko, V. A.

H. Wong and V. A. Gritsenko, “Defects in silicon oxynitride gate dielectric films,” Microelectron. Reliab.42(4-5), 597–605 (2002).
[CrossRef]

Guo, W.

Guo, Y.

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
[CrossRef]

R. Huang, S. Xu, Y. Guo, W. Guo, X. Wang, C. Song, J. Song, L. Wang, K. M. Ho, and N. Wang, “Luminescence enhancement of ZnO-core/a-SiNx: H-shell nanorod arrays,” Opt. Express21(5), 5891–5896 (2013).
[CrossRef] [PubMed]

C. Song, R. Huang, X. Wang, Y. Guo, and J. Song, “Tunable red light emission from a-Si:H/a-SiNx multilayers,” Opt. Mater. Express3(5), 664–670 (2013).
[CrossRef]

Guo, Y. Q.

Hamel, S.

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

Han, P.

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

Hao, H. L.

H. L. Hao and W. Z. Shen, “Identification and control of the origin of photoluminescence from silicon quantum dots,” Nanotechnology19(45), 455704 (2008).
[CrossRef] [PubMed]

Ho, K. M.

Hu, Y.-L.

J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

Huang, R.

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
[CrossRef]

C. Song, R. Huang, X. Wang, Y. Guo, and J. Song, “Tunable red light emission from a-Si:H/a-SiNx multilayers,” Opt. Mater. Express3(5), 664–670 (2013).
[CrossRef]

R. Huang, S. Xu, Y. Guo, W. Guo, X. Wang, C. Song, J. Song, L. Wang, K. M. Ho, and N. Wang, “Luminescence enhancement of ZnO-core/a-SiNx: H-shell nanorod arrays,” Opt. Express21(5), 5891–5896 (2013).
[CrossRef] [PubMed]

R. Huang, J. Song, X. Wang, Y. Q. Guo, C. Song, Z. H. Zheng, X. L. Wu, and P. K. Chu, “Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride,” Opt. Lett.37(4), 692–694 (2012).
[CrossRef] [PubMed]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

Huang, S.-C.

J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

Huang, X.

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett.61(17), 2069–2071 (1992).
[CrossRef]

Iveland, J.

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett.110(17), 177406 (2013).
[CrossRef] [PubMed]

Jewell, J.

J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

Jin, L.

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er 3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett.103(7), 071101 (2013).
[CrossRef]

Kabashin, A. V.

A. V. Kabashin, J. P. Sylvestre, S. Patskovsky, and M. Meunier, “Correlation between photoluminescence properties and morphology of laser-ablated Si/SiOx nanostructured films,” J. Appl. Phys.91(5), 3248–3254 (2002).
[CrossRef]

Kamyab, L.

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett.98(6), 061105 (2011).
[CrossRef]

Kashio, N.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
[CrossRef]

Kato, H.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
[CrossRef]

T. Noma, K. S. Seol, H. Kato, M. Fujimaki, and Y. Ohki, “Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride,” Appl. Phys. Lett.79(13), 1995–1997 (2001).
[CrossRef]

Kekatpure, R. D.

A. Tewary, R. D. Kekatpure, and M. L. Brongersma, “Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO2 laser annealing,” Appl. Phys. Lett.88(9), 093114 (2006).
[CrossRef]

Khan, S. A.

S. P. Singh, P. Srivastava, S. Ghosh, S. A. Khan, C. J. Oton, and G. V. Prakash, “Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films,” Scr. Mater.63(6), 605–608 (2010).
[CrossRef]

Kimerling, L. C.

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

Konagai, M.

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” Jpn. J. Appl. Phys.46(35), L833–L835 (2007).
[CrossRef]

Kumnorkaew, P.

X.-H. Li, P. Zhu, G. Liu, J. Zhang, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of Ш-Nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays,” J. Disp. Technol.9(5), 324–332 (2013).
[CrossRef]

Kuo, H. C.

G. R. Lin, C. J. Lin, and H. C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett.91(9), 093122 (2007).
[CrossRef]

Kurokawa, Y.

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” Jpn. J. Appl. Phys.46(35), L833–L835 (2007).
[CrossRef]

Li, D.

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron.19(3), 4602504 (2013).
[CrossRef]

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er 3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett.103(7), 071101 (2013).
[CrossRef]

Li, W.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

Li, X.

C. Tan, J. Zhang, X. Li, G. Liu, B. Tayo, and N. Tansu, “First-principle electronic properties of dilute-As GaNAs alloy for visible light emitters,” J. Disp. Technol.9(4), 272–279 (2013).
[CrossRef]

Li, X.-H.

X.-H. Li, P. Zhu, G. Liu, J. Zhang, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of Ш-Nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays,” J. Disp. Technol.9(5), 324–332 (2013).
[CrossRef]

Lian, C. W.

Lin, C.

G. Lin, Y. Pai, C. Lin, and C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Lin, C. J.

G. R. Lin, C. J. Lin, and H. C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett.91(9), 093122 (2007).
[CrossRef]

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Lin, C. K.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Lin, G.

G. Lin, Y. Pai, C. Lin, and C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Lin, G. R.

C. L. Wu and G. R. Lin, “Power gain modeling of Si quantum dots embedded in a SiOx waveguide amplifier with inhomogeneous broadened spontaneous emission,” IEEE J. Sel. Top. Quantum Electron.19(5), 3000109 (2013).

K. H. Lin, S. C. Liou, W. L. Chen, C. L. Wu, G. R. Lin, and Y. M. Chang, “Tunable and stable UV-NIR photoluminescence from annealed SiOx with Si nanoparticles,” Opt. Express21(20), 23416–23424 (2013).
[CrossRef] [PubMed]

G. R. Lin, C. W. Lian, C. L. Wu, and Y. H. Lin, “Gain analysis of optically-pumped Si nanocrystal waveguide amplifiers on silicon substrate,” Opt. Express18(9), 9213–9219 (2010).
[CrossRef] [PubMed]

G. R. Lin, C. J. Lin, and H. C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett.91(9), 093122 (2007).
[CrossRef]

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Lin, K. H.

Lin, Y. H.

Lin, Z.

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

Liou, S. C.

Liu, G.

X.-H. Li, P. Zhu, G. Liu, J. Zhang, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of Ш-Nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays,” J. Disp. Technol.9(5), 324–332 (2013).
[CrossRef]

P. Zhu, G. Liu, J. Zhang, and N. Tansu, “FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays,” J. Disp. Technol.9(5), 317–323 (2013).
[CrossRef]

C. Tan, J. Zhang, X. Li, G. Liu, B. Tayo, and N. Tansu, “First-principle electronic properties of dilute-As GaNAs alloy for visible light emitters,” J. Disp. Technol.9(4), 272–279 (2013).
[CrossRef]

H. Zhao, G. Liu, J. Zhang, R. A. Arif, and N. Tansu, “Analysis of internal quantum efficiency and current injection efficiency in Ш-Nitride light-emitting diodes,” J. Disp. Technol.9(4), 212–225 (2013).
[CrossRef]

Liu, Y.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Liu, Z.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Lo, G.-Q.

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett.98(6), 061105 (2011).
[CrossRef]

Ma, Z.

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

Martinelli, L.

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett.110(17), 177406 (2013).
[CrossRef] [PubMed]

Mazzoleni, C.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Meunier, M.

A. V. Kabashin, J. P. Sylvestre, S. Patskovsky, and M. Meunier, “Correlation between photoluminescence properties and morphology of laser-ablated Si/SiOx nanostructured films,” J. Appl. Phys.91(5), 3248–3254 (2002).
[CrossRef]

Miyajima, S.

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” Jpn. J. Appl. Phys.46(35), L833–L835 (2007).
[CrossRef]

Mu, W.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

Nakamura, S.

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H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
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Ohki, Y.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
[CrossRef]

T. Noma, K. S. Seol, H. Kato, M. Fujimaki, and Y. Ohki, “Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride,” Appl. Phys. Lett.79(13), 1995–1997 (2001).
[CrossRef]

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S. P. Singh, P. Srivastava, S. Ghosh, S. A. Khan, C. J. Oton, and G. V. Prakash, “Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films,” Scr. Mater.63(6), 605–608 (2010).
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Pai, Y.

G. Lin, Y. Pai, C. Lin, and C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Park, N. M.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
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Park, S. J.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
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Patskovsky, S.

A. V. Kabashin, J. P. Sylvestre, S. Patskovsky, and M. Meunier, “Correlation between photoluminescence properties and morphology of laser-ablated Si/SiOx nanostructured films,” J. Appl. Phys.91(5), 3248–3254 (2002).
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L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
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J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett.110(17), 177406 (2013).
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Prakash, G. V.

S. P. Singh, P. Srivastava, S. Ghosh, S. A. Khan, C. J. Oton, and G. V. Prakash, “Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films,” Scr. Mater.63(6), 605–608 (2010).
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L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
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Qian, B.

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

Que, Q.

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron.19(3), 4602504 (2013).
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A. Rodriguez, J. Arenas, and J. C. Alonso, “Photoluminescence mechanisms in silicon quantum dots embedded in nanometric chlorinated-silicon nitride films,” J. Lumin.132(9), 2385–2389 (2012).
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Rusli, M. B. Yu.

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett.98(6), 061105 (2011).
[CrossRef]

Seol, K. S.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys.93(1), 239–244 (2003).
[CrossRef]

T. Noma, K. S. Seol, H. Kato, M. Fujimaki, and Y. Ohki, “Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride,” Appl. Phys. Lett.79(13), 1995–1997 (2001).
[CrossRef]

Seong, T. Y.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
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H. L. Hao and W. Z. Shen, “Identification and control of the origin of photoluminescence from silicon quantum dots,” Nanotechnology19(45), 455704 (2008).
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J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
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Singh, S. P.

S. P. Singh, P. Srivastava, S. Ghosh, S. A. Khan, C. J. Oton, and G. V. Prakash, “Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films,” Scr. Mater.63(6), 605–608 (2010).
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Song, C.

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
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X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
[CrossRef]

C. Song, R. Huang, X. Wang, Y. Guo, and J. Song, “Tunable red light emission from a-Si:H/a-SiNx multilayers,” Opt. Mater. Express3(5), 664–670 (2013).
[CrossRef]

R. Huang, S. Xu, Y. Guo, W. Guo, X. Wang, C. Song, J. Song, L. Wang, K. M. Ho, and N. Wang, “Luminescence enhancement of ZnO-core/a-SiNx: H-shell nanorod arrays,” Opt. Express21(5), 5891–5896 (2013).
[CrossRef] [PubMed]

R. Huang, J. Song, X. Wang, Y. Q. Guo, C. Song, Z. H. Zheng, X. L. Wu, and P. K. Chu, “Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride,” Opt. Lett.37(4), 692–694 (2012).
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Song, J.

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
[CrossRef]

R. Huang, S. Xu, Y. Guo, W. Guo, X. Wang, C. Song, J. Song, L. Wang, K. M. Ho, and N. Wang, “Luminescence enhancement of ZnO-core/a-SiNx: H-shell nanorod arrays,” Opt. Express21(5), 5891–5896 (2013).
[CrossRef] [PubMed]

C. Song, R. Huang, X. Wang, Y. Guo, and J. Song, “Tunable red light emission from a-Si:H/a-SiNx multilayers,” Opt. Mater. Express3(5), 664–670 (2013).
[CrossRef]

R. Huang, J. Song, X. Wang, Y. Q. Guo, C. Song, Z. H. Zheng, X. L. Wu, and P. K. Chu, “Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride,” Opt. Lett.37(4), 692–694 (2012).
[CrossRef] [PubMed]

Song, R.

X.-H. Li, P. Zhu, G. Liu, J. Zhang, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of Ш-Nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays,” J. Disp. Technol.9(5), 324–332 (2013).
[CrossRef]

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J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

Speck, J. S.

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett.110(17), 177406 (2013).
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S. P. Singh, P. Srivastava, S. Ghosh, S. A. Khan, C. J. Oton, and G. V. Prakash, “Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films,” Scr. Mater.63(6), 605–608 (2010).
[CrossRef]

Sun, S.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
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A. V. Kabashin, J. P. Sylvestre, S. Patskovsky, and M. Meunier, “Correlation between photoluminescence properties and morphology of laser-ablated Si/SiOx nanostructured films,” J. Appl. Phys.91(5), 3248–3254 (2002).
[CrossRef]

Tan, C.

C. Tan, J. Zhang, X. Li, G. Liu, B. Tayo, and N. Tansu, “First-principle electronic properties of dilute-As GaNAs alloy for visible light emitters,” J. Disp. Technol.9(4), 272–279 (2013).
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C. Tan, J. Zhang, X. Li, G. Liu, B. Tayo, and N. Tansu, “First-principle electronic properties of dilute-As GaNAs alloy for visible light emitters,” J. Disp. Technol.9(4), 272–279 (2013).
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H. Zhao, G. Liu, J. Zhang, R. A. Arif, and N. Tansu, “Analysis of internal quantum efficiency and current injection efficiency in Ш-Nitride light-emitting diodes,” J. Disp. Technol.9(4), 212–225 (2013).
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P. Zhu, G. Liu, J. Zhang, and N. Tansu, “FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays,” J. Disp. Technol.9(5), 317–323 (2013).
[CrossRef]

X.-H. Li, P. Zhu, G. Liu, J. Zhang, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of Ш-Nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays,” J. Disp. Technol.9(5), 324–332 (2013).
[CrossRef]

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C. Tan, J. Zhang, X. Li, G. Liu, B. Tayo, and N. Tansu, “First-principle electronic properties of dilute-As GaNAs alloy for visible light emitters,” J. Disp. Technol.9(4), 272–279 (2013).
[CrossRef]

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A. Tewary, R. D. Kekatpure, and M. L. Brongersma, “Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO2 laser annealing,” Appl. Phys. Lett.88(9), 093114 (2006).
[CrossRef]

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Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” Jpn. J. Appl. Phys.46(35), L833–L835 (2007).
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H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Wang, F.

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron.19(3), 4602504 (2013).
[CrossRef]

Wang, L.

Wang, N.

Wang, X.

R. Huang, Z. Lin, Z. Lin, C. Song, Y. Guo, X. Wang, and J. Song, “Suppression of hole overflow and enhancement of light emission efficiency in si quantum dots based silicon nitride light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200306 (2014).
[CrossRef]

X. Wang, R. Huang, C. Song, Y. Guo, and J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett.102(8), 081114 (2013).
[CrossRef]

R. Huang, S. Xu, Y. Guo, W. Guo, X. Wang, C. Song, J. Song, L. Wang, K. M. Ho, and N. Wang, “Luminescence enhancement of ZnO-core/a-SiNx: H-shell nanorod arrays,” Opt. Express21(5), 5891–5896 (2013).
[CrossRef] [PubMed]

C. Song, R. Huang, X. Wang, Y. Guo, and J. Song, “Tunable red light emission from a-Si:H/a-SiNx multilayers,” Opt. Mater. Express3(5), 664–670 (2013).
[CrossRef]

R. Huang, J. Song, X. Wang, Y. Q. Guo, C. Song, Z. H. Zheng, X. L. Wu, and P. K. Chu, “Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride,” Opt. Lett.37(4), 692–694 (2012).
[CrossRef] [PubMed]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

Wang, Y. G.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83, 3474–3476 (2003).

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

Wang, Y. Q.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83, 3474–3476 (2003).

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

Weisbuch, C.

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett.110(17), 177406 (2013).
[CrossRef] [PubMed]

J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

Williamson, A.

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
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H. Wong and V. A. Gritsenko, “Defects in silicon oxynitride gate dielectric films,” Microelectron. Reliab.42(4-5), 597–605 (2002).
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Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Wu, C. L.

Wu, X. L.

Xu, J.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi7(3–4), 828–831 (2010).

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett.90(9), 093515 (2007).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett.61(17), 2069–2071 (1992).
[CrossRef]

Xu, L.

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er 3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett.103(7), 071101 (2013).
[CrossRef]

Xu, S.

Yamada, A.

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” Jpn. J. Appl. Phys.46(35), L833–L835 (2007).
[CrossRef]

Yang, D.

L. Xu, L. Jin, D. Li, and D. Yang, “Effects of excess silicon on the 1540 nm Er 3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett.103(7), 071101 (2013).
[CrossRef]

F. Wang, D. Li, D. Yang, and Q. Que, “Tailoring effect of enhanced local electric field from metal nanoparticles on electroluminescence of silicon-rich silicon nitride,” IEEE J. Sel. Top. Quantum Electron.19(3), 4602504 (2013).
[CrossRef]

Yang, M.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Yi, J. H.

L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from siliconrich nitride nanostructures,” Appl. Phys. Lett.88(18), 183103 (2006).
[CrossRef]

Zhang, J.

P. Zhu, G. Liu, J. Zhang, and N. Tansu, “FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays,” J. Disp. Technol.9(5), 317–323 (2013).
[CrossRef]

X.-H. Li, P. Zhu, G. Liu, J. Zhang, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of Ш-Nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays,” J. Disp. Technol.9(5), 324–332 (2013).
[CrossRef]

H. Zhao, G. Liu, J. Zhang, R. A. Arif, and N. Tansu, “Analysis of internal quantum efficiency and current injection efficiency in Ш-Nitride light-emitting diodes,” J. Disp. Technol.9(4), 212–225 (2013).
[CrossRef]

C. Tan, J. Zhang, X. Li, G. Liu, B. Tayo, and N. Tansu, “First-principle electronic properties of dilute-As GaNAs alloy for visible light emitters,” J. Disp. Technol.9(4), 272–279 (2013).
[CrossRef]

Zhang, P.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron.20(4), 8200106 (2014).
[CrossRef]

Zhao, H.

H. Zhao, G. Liu, J. Zhang, R. A. Arif, and N. Tansu, “Analysis of internal quantum efficiency and current injection efficiency in Ш-Nitride light-emitting diodes,” J. Disp. Technol.9(4), 212–225 (2013).
[CrossRef]

Zheng, Z. H.

Zhu, F. R.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Zhu, P.

X.-H. Li, P. Zhu, G. Liu, J. Zhang, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of Ш-Nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays,” J. Disp. Technol.9(5), 324–332 (2013).
[CrossRef]

P. Zhu, G. Liu, J. Zhang, and N. Tansu, “FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays,” J. Disp. Technol.9(5), 317–323 (2013).
[CrossRef]

Appl. Phys. Lett. (16)

J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett.61(17), 2069–2071 (1992).
[CrossRef]

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83, 3474–3476 (2003).

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

G. R. Lin, C. J. Lin, and H. C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett.91(9), 093122 (2007).
[CrossRef]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

G. Lin, Y. Pai, C. Lin, and C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

L. Kamyab, M. B. Yu. Rusli, L. Ding, and G.-Q. Lo, “Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection,” Appl. Phys. Lett.98(6), 061105 (2011).
[CrossRef]

A. Tewary, R. D. Kekatpure, and M. L. Brongersma, “Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO2 laser annealing,” Appl. Phys. Lett.88(9), 093114 (2006).
[CrossRef]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett.89(22), 221120 (2006).
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IEEE J. Sel. Top. Quantum Electron. (4)

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Nanotechnology (1)

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Opt. Express (3)

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Scr. Mater. (1)

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[CrossRef]

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Figures (5)

Fig. 1
Fig. 1

(a) PL spectra of silicon oxynitride samples fabricated at different oxygen flow rates: 0.6 sccm (S1), 1.0 sccm (S2), 2.0 sccm (S3), and 3.0 sccm (S4). Inset shows the photography of the samples under an excitation wavelength of 325 nm. (b) The integrated PL intensity of the samples as a function of oxygen flow rate.

Fig. 2
Fig. 2

Optical bandgap and PL peak energy of silicon oxynitride samples as a function of oxygen flow rate. Inset shows the tauc plots of S1.

Fig. 3
Fig. 3

PL peak energy versus the excitation wavelength for S1, S2, S3, and S4.

Fig. 4
Fig. 4

(a) FTIR spectra of silicon oxynitride samples fabricated at different oxygen flow rates, respectively. (b) Si, N and O concentration as a function of the oxygen flow rate. (c) Deconvoluted Si 2p XPS spectra for S1, S2, S3, and S4, respectively.

Fig. 5
Fig. 5

Room-temperature luminescence decay traces taken from different samples, respectively.

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