Abstract

We investigate the structural properties of molecular-beam-epitaxy coalescence overgrowth of GaN columns at the nanoscale with transmission electron microscopy and other characterization techniques. Two samples grown over nanocolumns of different widths and spatial densities (columns/area) are compared. It is found that columns with a larger cross section (~500 nm) and correspondingly lower spatial density normally lead to un-coalesced overgrown domains ranging 5-8 μm in size. On the other hand, the overgrowth on the columns of a smaller cross section (~100 nm) and correspondingly higher density results in coalesced domains ranging from 1 to 5 μm in size. It is believed that among the smaller, more closely spaced columns the strain distribution resulting from overgrowth is more effective in leading to the uniformity of crystalline orientation, and hence successful coalescence. The optical characterization leads to the conclusion that the defect density in the sample grown on smaller columns is lower when compared with that grown on larger columns.

© 2013 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. G. Sun, G. Xu, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
    [Crossref]
  2. L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-Assembled Vertical Gallium Nitride Nanorods,” Appl. Phys. Lett. 82, 1601–1603 (2003).
    [Crossref]
  3. C. C. Lin, C. H. Chiu, H. W. Huang, S. P. Chang, and H. C. Kuo, “Highly efficient InGaN-based light emitting devices grown on nanoscale patterned substrates by MOCVD,” Proc. SPIE, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III, 83120C (2011).
  4. E. Calleja, M. A. Sanchez-Garcya, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. Ploog, “Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy,” Phys. Rev. B 62(24), 16826–16834 (2000).
    [Crossref]
  5. T. Iwanaga, T. Suzuki, S. Yagi, and T. Motooka, “Optical absorption properties of Mg-doped GaN nanocolumns,” J. Appl. Phys. 98(10), 104303 (2005).
    [Crossref]
  6. J. E. Van Nostrand, K. L. Averett, R. Cortez, J. Boeckl, C. E. Stutz, N. A. Sanford, A. V. Davydov, and J. D. Albrecht, “Molecular beam epitaxial growth of high-quality GaN nanocolumns,” J. Cryst. Growth 287(2), 500–503 (2006).
    [Crossref]
  7. R. Walther, D. Litvinov, M. Fotouhi, R. Schneider, D. Gerthsen, R. Vohringer, D. Z. Hu, and D. M. Schaadt, “Microstructure of PAMBE-grown InN layers on Si(1 1 1),” J. Cryst. Growth 340(1), 34–40 (2012).
    [Crossref]
  8. H.-M. Kim, D. S. Kim, D. Y. Kim, T. W. Kang, Y.-H. Cho, and K. S. Chung, “Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy,” Appl. Phys. Lett. 81, 2193 (2001).
  9. J. Sanchez-Paramo, J. M. Calleja, M. A. Sanchez-Garcia, E. Calleja, and U. Jahn, “Structural and optical characterization of intrinsic GaN nanocolumns,” Physica E 13(2-4), 1070–1073 (2002).
    [Crossref]
  10. R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi, and K. Kishino, “Complex strain distribution in individual facetted InGaN/GaN nano-columnar heterostructures,” Opt. Mater. Express 3(1), 47–53 (2013).
    [Crossref]
  11. I.-W. Feng, J. Li, J. Lin, H. Jiang, and J. Zavada, “Effects of growth pressure on erbium doped GaN infrared emitters synthesized by metal organic chemical vapor deposition,” Opt. Mater. Express 2(8), 1095–1100 (2012).
    [Crossref]
  12. J. Hite, M. Twigg, M. Mastro, J. Freitas, J. Meyer, I. Vurgaftman, S. O’Connor, N. Condon, F. Kub, S. Bowman, and C. Eddy, “Development of periodically oriented gallium nitride for non-linear optics [Invited],” Opt. Mater. Express 2(9), 1203–1208 (2012).
    [Crossref]
  13. K. Oikawa, C. Feldmeier, U. T. Schwarz, Y. Kawakami, and R. Micheletto, “Real-time near-field evidence of optical blinking in the photoluminescence of InGaN by scanning near-field optical microscope,” Opt. Mater. Express 1(2), 158–163 (2011).
    [Crossref]
  14. Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
    [Crossref]
  15. A. Kikuchi, M. Tada, K. Miwa, and K. Kishino, “Growth and characterization of InGaN/GaN nanocolumn LED,” Proc. SPIE 6129, 612905, 612905-8 (2006).
    [Crossref]
  16. K. L. Averett, J. E. Van Nostrand, J. D. Albrecht, Y. S. Chen, and C. C. Yang, “Epitaxial overgrowth of GaN nanocolumns,” J. Vac. Sci. Technol. B 25(3), 964–968 (2007).
    [Crossref]
  17. A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) si substrate,” Jpn. J. Appl. Phys. 43(No. 12A), L1524–L1526 (2004).
    [Crossref]
  18. K. Kusakabe, A. Kikuchi, and K. Kishino, “Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. Vol. 40(Part 2, No. 3A), L192–L194 (2001).
    [Crossref]
  19. H.-C. Wang, T.-Y. Tang, C. C. Yang, T. Malinauskas, and K. Jarasiunas, “Carrier dynamics in coalescence overgrowth of GaN nanocolumns,” Thin Solid Films 519(2), 863–867 (2010).
    [Crossref]
  20. J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett. 97(11), 111105 (2010).
    [Crossref]
  21. J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett. 98(17), 171111 (2011).
    [Crossref]
  22. Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett. 99(25), 251112 (2011).
    [Crossref]
  23. E. Francesco Pecora, W. Zhang, A. Y. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100, 061111 (2012).
  24. G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
    [Crossref]
  25. R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and ipurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
    [Crossref]
  26. B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, “Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 77(18), 2885 (2000).
    [Crossref]
  27. L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(10), 1601 (2003).
    [Crossref]
  28. C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R. J. Molnar, T. D. Moustakas, E. N. Mokhov, and P. G. Baranov, “Strongly localized excitons in gallium nitride,” Appl. Phys. Lett. 68(18), 2556 (1996).
    [Crossref]
  29. C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
    [Crossref] [PubMed]
  30. T. Matsumoto and M. Aoki, “Temperature Dependence of Photoluminescence from GaN,” Jpn. J. Appl. Phys. 13(11), 1804–1807 (1974).
    [Crossref]
  31. F. Calley, F. J. Sanchez, J. M. G. Tijeroz, M. A. Sanchez-Garcia, E. Calleja, and R. Beresfordx, “Exciton and donor–acceptor recombination in undoped GaN on Si(111),” Semicond. Sci. Technol. 12(11), 1396–1403 (1997).
    [Crossref]
  32. A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. T. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, and B. Hahn, “Measurement of the internal quantum efficiency of InGaN quantum wells,” SPIE Vol. 6486 (2007).
  33. Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nano-patterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1066–1072 (2009).
    [Crossref]
  34. Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
    [Crossref]
  35. Y. K. Ee, X. H. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth 312(8), 1311–1315 (2010).
    [Crossref]
  36. Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
    [Crossref]

2013 (1)

2012 (6)

E. Francesco Pecora, W. Zhang, A. Y. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100, 061111 (2012).

G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
[Crossref]

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

R. Walther, D. Litvinov, M. Fotouhi, R. Schneider, D. Gerthsen, R. Vohringer, D. Z. Hu, and D. M. Schaadt, “Microstructure of PAMBE-grown InN layers on Si(1 1 1),” J. Cryst. Growth 340(1), 34–40 (2012).
[Crossref]

I.-W. Feng, J. Li, J. Lin, H. Jiang, and J. Zavada, “Effects of growth pressure on erbium doped GaN infrared emitters synthesized by metal organic chemical vapor deposition,” Opt. Mater. Express 2(8), 1095–1100 (2012).
[Crossref]

J. Hite, M. Twigg, M. Mastro, J. Freitas, J. Meyer, I. Vurgaftman, S. O’Connor, N. Condon, F. Kub, S. Bowman, and C. Eddy, “Development of periodically oriented gallium nitride for non-linear optics [Invited],” Opt. Mater. Express 2(9), 1203–1208 (2012).
[Crossref]

2011 (6)

K. Oikawa, C. Feldmeier, U. T. Schwarz, Y. Kawakami, and R. Micheletto, “Real-time near-field evidence of optical blinking in the photoluminescence of InGaN by scanning near-field optical microscope,” Opt. Mater. Express 1(2), 158–163 (2011).
[Crossref]

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
[Crossref]

G. Sun, G. Xu, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
[Crossref]

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and ipurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett. 98(17), 171111 (2011).
[Crossref]

Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett. 99(25), 251112 (2011).
[Crossref]

2010 (3)

H.-C. Wang, T.-Y. Tang, C. C. Yang, T. Malinauskas, and K. Jarasiunas, “Carrier dynamics in coalescence overgrowth of GaN nanocolumns,” Thin Solid Films 519(2), 863–867 (2010).
[Crossref]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett. 97(11), 111105 (2010).
[Crossref]

Y. K. Ee, X. H. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth 312(8), 1311–1315 (2010).
[Crossref]

2009 (2)

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nano-patterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1066–1072 (2009).
[Crossref]

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

2007 (1)

K. L. Averett, J. E. Van Nostrand, J. D. Albrecht, Y. S. Chen, and C. C. Yang, “Epitaxial overgrowth of GaN nanocolumns,” J. Vac. Sci. Technol. B 25(3), 964–968 (2007).
[Crossref]

2006 (2)

A. Kikuchi, M. Tada, K. Miwa, and K. Kishino, “Growth and characterization of InGaN/GaN nanocolumn LED,” Proc. SPIE 6129, 612905, 612905-8 (2006).
[Crossref]

J. E. Van Nostrand, K. L. Averett, R. Cortez, J. Boeckl, C. E. Stutz, N. A. Sanford, A. V. Davydov, and J. D. Albrecht, “Molecular beam epitaxial growth of high-quality GaN nanocolumns,” J. Cryst. Growth 287(2), 500–503 (2006).
[Crossref]

2005 (1)

T. Iwanaga, T. Suzuki, S. Yagi, and T. Motooka, “Optical absorption properties of Mg-doped GaN nanocolumns,” J. Appl. Phys. 98(10), 104303 (2005).
[Crossref]

2004 (2)

Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
[Crossref]

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) si substrate,” Jpn. J. Appl. Phys. 43(No. 12A), L1524–L1526 (2004).
[Crossref]

2003 (2)

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(10), 1601 (2003).
[Crossref]

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-Assembled Vertical Gallium Nitride Nanorods,” Appl. Phys. Lett. 82, 1601–1603 (2003).
[Crossref]

2002 (1)

J. Sanchez-Paramo, J. M. Calleja, M. A. Sanchez-Garcia, E. Calleja, and U. Jahn, “Structural and optical characterization of intrinsic GaN nanocolumns,” Physica E 13(2-4), 1070–1073 (2002).
[Crossref]

2001 (2)

H.-M. Kim, D. S. Kim, D. Y. Kim, T. W. Kang, Y.-H. Cho, and K. S. Chung, “Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy,” Appl. Phys. Lett. 81, 2193 (2001).

K. Kusakabe, A. Kikuchi, and K. Kishino, “Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. Vol. 40(Part 2, No. 3A), L192–L194 (2001).
[Crossref]

2000 (2)

B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, “Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 77(18), 2885 (2000).
[Crossref]

E. Calleja, M. A. Sanchez-Garcya, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. Ploog, “Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy,” Phys. Rev. B 62(24), 16826–16834 (2000).
[Crossref]

1997 (1)

F. Calley, F. J. Sanchez, J. M. G. Tijeroz, M. A. Sanchez-Garcia, E. Calleja, and R. Beresfordx, “Exciton and donor–acceptor recombination in undoped GaN on Si(111),” Semicond. Sci. Technol. 12(11), 1396–1403 (1997).
[Crossref]

1996 (1)

C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R. J. Molnar, T. D. Moustakas, E. N. Mokhov, and P. G. Baranov, “Strongly localized excitons in gallium nitride,” Appl. Phys. Lett. 68(18), 2556 (1996).
[Crossref]

1974 (1)

T. Matsumoto and M. Aoki, “Temperature Dependence of Photoluminescence from GaN,” Jpn. J. Appl. Phys. 13(11), 1804–1807 (1974).
[Crossref]

Albrecht, J. D.

K. L. Averett, J. E. Van Nostrand, J. D. Albrecht, Y. S. Chen, and C. C. Yang, “Epitaxial overgrowth of GaN nanocolumns,” J. Vac. Sci. Technol. B 25(3), 964–968 (2007).
[Crossref]

J. E. Van Nostrand, K. L. Averett, R. Cortez, J. Boeckl, C. E. Stutz, N. A. Sanford, A. V. Davydov, and J. D. Albrecht, “Molecular beam epitaxial growth of high-quality GaN nanocolumns,” J. Cryst. Growth 287(2), 500–503 (2006).
[Crossref]

Aoki, M.

T. Matsumoto and M. Aoki, “Temperature Dependence of Photoluminescence from GaN,” Jpn. J. Appl. Phys. 13(11), 1804–1807 (1974).
[Crossref]

Averett, K. L.

K. L. Averett, J. E. Van Nostrand, J. D. Albrecht, Y. S. Chen, and C. C. Yang, “Epitaxial overgrowth of GaN nanocolumns,” J. Vac. Sci. Technol. B 25(3), 964–968 (2007).
[Crossref]

J. E. Van Nostrand, K. L. Averett, R. Cortez, J. Boeckl, C. E. Stutz, N. A. Sanford, A. V. Davydov, and J. D. Albrecht, “Molecular beam epitaxial growth of high-quality GaN nanocolumns,” J. Cryst. Growth 287(2), 500–503 (2006).
[Crossref]

Baranov, P. G.

C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R. J. Molnar, T. D. Moustakas, E. N. Mokhov, and P. G. Baranov, “Strongly localized excitons in gallium nitride,” Appl. Phys. Lett. 68(18), 2556 (1996).
[Crossref]

Bardoux, R.

Beresfordx, R.

F. Calley, F. J. Sanchez, J. M. G. Tijeroz, M. A. Sanchez-Garcia, E. Calleja, and R. Beresfordx, “Exciton and donor–acceptor recombination in undoped GaN on Si(111),” Semicond. Sci. Technol. 12(11), 1396–1403 (1997).
[Crossref]

Biser, J. E.

Y. K. Ee, X. H. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth 312(8), 1311–1315 (2010).
[Crossref]

Biser, J. M.

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nano-patterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1066–1072 (2009).
[Crossref]

Boeckl, J.

J. E. Van Nostrand, K. L. Averett, R. Cortez, J. Boeckl, C. E. Stutz, N. A. Sanford, A. V. Davydov, and J. D. Albrecht, “Molecular beam epitaxial growth of high-quality GaN nanocolumns,” J. Cryst. Growth 287(2), 500–503 (2006).
[Crossref]

Bowman, S.

Calle, F.

E. Calleja, M. A. Sanchez-Garcya, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. Ploog, “Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy,” Phys. Rev. B 62(24), 16826–16834 (2000).
[Crossref]

Calleja, E.

J. Sanchez-Paramo, J. M. Calleja, M. A. Sanchez-Garcia, E. Calleja, and U. Jahn, “Structural and optical characterization of intrinsic GaN nanocolumns,” Physica E 13(2-4), 1070–1073 (2002).
[Crossref]

E. Calleja, M. A. Sanchez-Garcya, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. Ploog, “Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy,” Phys. Rev. B 62(24), 16826–16834 (2000).
[Crossref]

F. Calley, F. J. Sanchez, J. M. G. Tijeroz, M. A. Sanchez-Garcia, E. Calleja, and R. Beresfordx, “Exciton and donor–acceptor recombination in undoped GaN on Si(111),” Semicond. Sci. Technol. 12(11), 1396–1403 (1997).
[Crossref]

Calleja, J. M.

J. Sanchez-Paramo, J. M. Calleja, M. A. Sanchez-Garcia, E. Calleja, and U. Jahn, “Structural and optical characterization of intrinsic GaN nanocolumns,” Physica E 13(2-4), 1070–1073 (2002).
[Crossref]

Calley, F.

F. Calley, F. J. Sanchez, J. M. G. Tijeroz, M. A. Sanchez-Garcia, E. Calleja, and R. Beresfordx, “Exciton and donor–acceptor recombination in undoped GaN on Si(111),” Semicond. Sci. Technol. 12(11), 1396–1403 (1997).
[Crossref]

Cao, W.

Y. K. Ee, X. H. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth 312(8), 1311–1315 (2010).
[Crossref]

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nano-patterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1066–1072 (2009).
[Crossref]

Chan, H. M.

Y. K. Ee, X. H. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth 312(8), 1311–1315 (2010).
[Crossref]

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nano-patterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1066–1072 (2009).
[Crossref]

Chang, C. Y.

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

Chen, Y. H.

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

Chen, Y. S.

K. L. Averett, J. E. Van Nostrand, J. D. Albrecht, Y. S. Chen, and C. C. Yang, “Epitaxial overgrowth of GaN nanocolumns,” J. Vac. Sci. Technol. B 25(3), 964–968 (2007).
[Crossref]

Chi, T. W.

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(10), 1601 (2003).
[Crossref]

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-Assembled Vertical Gallium Nitride Nanorods,” Appl. Phys. Lett. 82, 1601–1603 (2003).
[Crossref]

Chiu, C. H.

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Cho, Y.-H.

H.-M. Kim, D. S. Kim, D. Y. Kim, T. W. Kang, Y.-H. Cho, and K. S. Chung, “Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy,” Appl. Phys. Lett. 81, 2193 (2001).

Chung, K. S.

H.-M. Kim, D. S. Kim, D. Y. Kim, T. W. Kang, Y.-H. Cho, and K. S. Chung, “Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy,” Appl. Phys. Lett. 81, 2193 (2001).

Chung, R. B.

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and ipurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

Condon, N.

Cortez, R.

J. E. Van Nostrand, K. L. Averett, R. Cortez, J. Boeckl, C. E. Stutz, N. A. Sanford, A. V. Davydov, and J. D. Albrecht, “Molecular beam epitaxial growth of high-quality GaN nanocolumns,” J. Cryst. Growth 287(2), 500–503 (2006).
[Crossref]

Davydov, A. V.

J. E. Van Nostrand, K. L. Averett, R. Cortez, J. Boeckl, C. E. Stutz, N. A. Sanford, A. V. Davydov, and J. D. Albrecht, “Molecular beam epitaxial growth of high-quality GaN nanocolumns,” J. Cryst. Growth 287(2), 500–503 (2006).
[Crossref]

DenBaars, S.

B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, “Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 77(18), 2885 (2000).
[Crossref]

DenBaars, S. P.

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and ipurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

Detchprohm, T.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
[Crossref]

Ding, Y. J.

G. Sun, G. Xu, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
[Crossref]

Eddy, C.

Ee, Y. K.

Y. K. Ee, X. H. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth 312(8), 1311–1315 (2010).
[Crossref]

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nano-patterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1066–1072 (2009).
[Crossref]

Elsass, C.

B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, “Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 77(18), 2885 (2000).
[Crossref]

Evans, K. R.

G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
[Crossref]

Feldmeier, C.

Feng, I.-W.

Fini, P.

B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, “Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 77(18), 2885 (2000).
[Crossref]

Fischer, S.

C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R. J. Molnar, T. D. Moustakas, E. N. Mokhov, and P. G. Baranov, “Strongly localized excitons in gallium nitride,” Appl. Phys. Lett. 68(18), 2556 (1996).
[Crossref]

Fotouhi, M.

R. Walther, D. Litvinov, M. Fotouhi, R. Schneider, D. Gerthsen, R. Vohringer, D. Z. Hu, and D. M. Schaadt, “Microstructure of PAMBE-grown InN layers on Si(1 1 1),” J. Cryst. Growth 340(1), 34–40 (2012).
[Crossref]

Francesco Pecora, E.

E. Francesco Pecora, W. Zhang, A. Y. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100, 061111 (2012).

Freitas, J.

Fujiyasu, H.

Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
[Crossref]

Funato, M.

Gerthsen, D.

R. Walther, D. Litvinov, M. Fotouhi, R. Schneider, D. Gerthsen, R. Vohringer, D. Z. Hu, and D. M. Schaadt, “Microstructure of PAMBE-grown InN layers on Si(1 1 1),” J. Cryst. Growth 340(1), 34–40 (2012).
[Crossref]

Haller, E. E.

C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R. J. Molnar, T. D. Moustakas, E. N. Mokhov, and P. G. Baranov, “Strongly localized excitons in gallium nitride,” Appl. Phys. Lett. 68(18), 2556 (1996).
[Crossref]

Han, H. V.

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

Heying, B.

B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, “Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 77(18), 2885 (2000).
[Crossref]

Hite, J.

Hoshino, T.

Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
[Crossref]

Hou, W.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
[Crossref]

Hsiao, C. L.

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-Assembled Vertical Gallium Nitride Nanorods,” Appl. Phys. Lett. 82, 1601–1603 (2003).
[Crossref]

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(10), 1601 (2003).
[Crossref]

Hsieh, K. Y.

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(10), 1601 (2003).
[Crossref]

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-Assembled Vertical Gallium Nitride Nanorods,” Appl. Phys. Lett. 82, 1601–1603 (2003).
[Crossref]

Hu, D. Z.

R. Walther, D. Litvinov, M. Fotouhi, R. Schneider, D. Gerthsen, R. Vohringer, D. Z. Hu, and D. M. Schaadt, “Microstructure of PAMBE-grown InN layers on Si(1 1 1),” J. Cryst. Growth 340(1), 34–40 (2012).
[Crossref]

Huang, G. S.

G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
[Crossref]

Inoue, Y.

Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
[Crossref]

Ishida, A.

Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
[Crossref]

Ishino, K.

Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
[Crossref]

Iwanaga, T.

T. Iwanaga, T. Suzuki, S. Yagi, and T. Motooka, “Optical absorption properties of Mg-doped GaN nanocolumns,” J. Appl. Phys. 98(10), 104303 (2005).
[Crossref]

Jahn, U.

J. Sanchez-Paramo, J. M. Calleja, M. A. Sanchez-Garcia, E. Calleja, and U. Jahn, “Structural and optical characterization of intrinsic GaN nanocolumns,” Physica E 13(2-4), 1070–1073 (2002).
[Crossref]

E. Calleja, M. A. Sanchez-Garcya, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. Ploog, “Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy,” Phys. Rev. B 62(24), 16826–16834 (2000).
[Crossref]

Jarasiunas, K.

H.-C. Wang, T.-Y. Tang, C. C. Yang, T. Malinauskas, and K. Jarasiunas, “Carrier dynamics in coalescence overgrowth of GaN nanocolumns,” Thin Solid Films 519(2), 863–867 (2010).
[Crossref]

Jiang, H.

Kaneta, A.

Kang, T. W.

H.-M. Kim, D. S. Kim, D. Y. Kim, T. W. Kang, Y.-H. Cho, and K. S. Chung, “Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy,” Appl. Phys. Lett. 81, 2193 (2001).

Kasu, M.

Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett. 99(25), 251112 (2011).
[Crossref]

Kawai, M.

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) si substrate,” Jpn. J. Appl. Phys. 43(No. 12A), L1524–L1526 (2004).
[Crossref]

Kawakami, Y.

Ke, C. C.

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Keller, S.

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and ipurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

Kikuchi, A.

R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi, and K. Kishino, “Complex strain distribution in individual facetted InGaN/GaN nano-columnar heterostructures,” Opt. Mater. Express 3(1), 47–53 (2013).
[Crossref]

A. Kikuchi, M. Tada, K. Miwa, and K. Kishino, “Growth and characterization of InGaN/GaN nanocolumn LED,” Proc. SPIE 6129, 612905, 612905-8 (2006).
[Crossref]

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) si substrate,” Jpn. J. Appl. Phys. 43(No. 12A), L1524–L1526 (2004).
[Crossref]

K. Kusakabe, A. Kikuchi, and K. Kishino, “Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. Vol. 40(Part 2, No. 3A), L192–L194 (2001).
[Crossref]

Kim, D. S.

H.-M. Kim, D. S. Kim, D. Y. Kim, T. W. Kang, Y.-H. Cho, and K. S. Chung, “Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy,” Appl. Phys. Lett. 81, 2193 (2001).

Kim, D. Y.

H.-M. Kim, D. S. Kim, D. Y. Kim, T. W. Kang, Y.-H. Cho, and K. S. Chung, “Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy,” Appl. Phys. Lett. 81, 2193 (2001).

Kim, H.-M.

H.-M. Kim, D. S. Kim, D. Y. Kim, T. W. Kang, Y.-H. Cho, and K. S. Chung, “Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy,” Appl. Phys. Lett. 81, 2193 (2001).

Kishino, K.

R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi, and K. Kishino, “Complex strain distribution in individual facetted InGaN/GaN nano-columnar heterostructures,” Opt. Mater. Express 3(1), 47–53 (2013).
[Crossref]

A. Kikuchi, M. Tada, K. Miwa, and K. Kishino, “Growth and characterization of InGaN/GaN nanocolumn LED,” Proc. SPIE 6129, 612905, 612905-8 (2006).
[Crossref]

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) si substrate,” Jpn. J. Appl. Phys. 43(No. 12A), L1524–L1526 (2004).
[Crossref]

K. Kusakabe, A. Kikuchi, and K. Kishino, “Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. Vol. 40(Part 2, No. 3A), L192–L194 (2001).
[Crossref]

Kominami, H.

Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
[Crossref]

Kruger, J.

C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R. J. Molnar, T. D. Moustakas, E. N. Mokhov, and P. G. Baranov, “Strongly localized excitons in gallium nitride,” Appl. Phys. Lett. 68(18), 2556 (1996).
[Crossref]

Kub, F.

Kuo, H. C.

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Kusakabe, K.

K. Kusakabe, A. Kikuchi, and K. Kishino, “Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. Vol. 40(Part 2, No. 3A), L192–L194 (2001).
[Crossref]

Lan, Y. P.

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

Lee, Y. J.

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Li, J.

Li, X. H.

G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
[Crossref]

Y. K. Ee, X. H. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth 312(8), 1311–1315 (2010).
[Crossref]

Li, Y.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
[Crossref]

Lin, C. C.

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

Lin, J.

Lin, P. C.

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Litvinov, D.

R. Walther, D. Litvinov, M. Fotouhi, R. Schneider, D. Gerthsen, R. Vohringer, D. Z. Hu, and D. M. Schaadt, “Microstructure of PAMBE-grown InN layers on Si(1 1 1),” J. Cryst. Growth 340(1), 34–40 (2012).
[Crossref]

Liu, C. Y.

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

Liu, G.

G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
[Crossref]

Liu, G. Y.

G. Sun, G. Xu, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
[Crossref]

Lo, I.

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(10), 1601 (2003).
[Crossref]

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-Assembled Vertical Gallium Nitride Nanorods,” Appl. Phys. Lett. 82, 1601–1603 (2003).
[Crossref]

Lu, T. C.

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Malinauskas, T.

H.-C. Wang, T.-Y. Tang, C. C. Yang, T. Malinauskas, and K. Jarasiunas, “Carrier dynamics in coalescence overgrowth of GaN nanocolumns,” Thin Solid Films 519(2), 863–867 (2010).
[Crossref]

Mastro, M.

Matsumoto, T.

T. Matsumoto and M. Aoki, “Temperature Dependence of Photoluminescence from GaN,” Jpn. J. Appl. Phys. 13(11), 1804–1807 (1974).
[Crossref]

Meyer, J.

Micheletto, R.

Mimura, H.

Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
[Crossref]

Mishra, U.

B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, “Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 77(18), 2885 (2000).
[Crossref]

Miwa, K.

A. Kikuchi, M. Tada, K. Miwa, and K. Kishino, “Growth and characterization of InGaN/GaN nanocolumn LED,” Proc. SPIE 6129, 612905, 612905-8 (2006).
[Crossref]

Mokhov, E. N.

C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R. J. Molnar, T. D. Moustakas, E. N. Mokhov, and P. G. Baranov, “Strongly localized excitons in gallium nitride,” Appl. Phys. Lett. 68(18), 2556 (1996).
[Crossref]

Molnar, R. J.

C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R. J. Molnar, T. D. Moustakas, E. N. Mokhov, and P. G. Baranov, “Strongly localized excitons in gallium nitride,” Appl. Phys. Lett. 68(18), 2556 (1996).
[Crossref]

Motooka, T.

T. Iwanaga, T. Suzuki, S. Yagi, and T. Motooka, “Optical absorption properties of Mg-doped GaN nanocolumns,” J. Appl. Phys. 98(10), 104303 (2005).
[Crossref]

Moustakas, T. D.

E. Francesco Pecora, W. Zhang, A. Y. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100, 061111 (2012).

C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R. J. Molnar, T. D. Moustakas, E. N. Mokhov, and P. G. Baranov, “Strongly localized excitons in gallium nitride,” Appl. Phys. Lett. 68(18), 2556 (1996).
[Crossref]

Munoz, E.

E. Calleja, M. A. Sanchez-Garcya, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. Ploog, “Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy,” Phys. Rev. B 62(24), 16826–16834 (2000).
[Crossref]

Nakamura, S.

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and ipurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

Nakanishi, Y.

Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
[Crossref]

Naranjo, F. B.

E. Calleja, M. A. Sanchez-Garcya, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. Ploog, “Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy,” Phys. Rev. B 62(24), 16826–16834 (2000).
[Crossref]

Negro, L. D.

E. Francesco Pecora, W. Zhang, A. Y. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100, 061111 (2012).

Nikiforov, A. Y.

E. Francesco Pecora, W. Zhang, A. Y. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100, 061111 (2012).

O’Connor, S.

Oikawa, K.

Paiella, R.

E. Francesco Pecora, W. Zhang, A. Y. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100, 061111 (2012).

Paskova, T.

G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
[Crossref]

Ploog, K.

E. Calleja, M. A. Sanchez-Garcya, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. Ploog, “Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy,” Phys. Rev. B 62(24), 16826–16834 (2000).
[Crossref]

Poblenz, C.

B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, “Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 77(18), 2885 (2000).
[Crossref]

Sakakibara, S.

Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
[Crossref]

Sanchez, F. J.

E. Calleja, M. A. Sanchez-Garcya, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. Ploog, “Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy,” Phys. Rev. B 62(24), 16826–16834 (2000).
[Crossref]

F. Calley, F. J. Sanchez, J. M. G. Tijeroz, M. A. Sanchez-Garcia, E. Calleja, and R. Beresfordx, “Exciton and donor–acceptor recombination in undoped GaN on Si(111),” Semicond. Sci. Technol. 12(11), 1396–1403 (1997).
[Crossref]

Sanchez-Garcia, M. A.

J. Sanchez-Paramo, J. M. Calleja, M. A. Sanchez-Garcia, E. Calleja, and U. Jahn, “Structural and optical characterization of intrinsic GaN nanocolumns,” Physica E 13(2-4), 1070–1073 (2002).
[Crossref]

F. Calley, F. J. Sanchez, J. M. G. Tijeroz, M. A. Sanchez-Garcia, E. Calleja, and R. Beresfordx, “Exciton and donor–acceptor recombination in undoped GaN on Si(111),” Semicond. Sci. Technol. 12(11), 1396–1403 (1997).
[Crossref]

Sanchez-Garcya, M. A.

E. Calleja, M. A. Sanchez-Garcya, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. Ploog, “Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy,” Phys. Rev. B 62(24), 16826–16834 (2000).
[Crossref]

Sanchez-Paramo, J.

J. Sanchez-Paramo, J. M. Calleja, M. A. Sanchez-Garcia, E. Calleja, and U. Jahn, “Structural and optical characterization of intrinsic GaN nanocolumns,” Physica E 13(2-4), 1070–1073 (2002).
[Crossref]

Sanford, N. A.

J. E. Van Nostrand, K. L. Averett, R. Cortez, J. Boeckl, C. E. Stutz, N. A. Sanford, A. V. Davydov, and J. D. Albrecht, “Molecular beam epitaxial growth of high-quality GaN nanocolumns,” J. Cryst. Growth 287(2), 500–503 (2006).
[Crossref]

Schaadt, D. M.

R. Walther, D. Litvinov, M. Fotouhi, R. Schneider, D. Gerthsen, R. Vohringer, D. Z. Hu, and D. M. Schaadt, “Microstructure of PAMBE-grown InN layers on Si(1 1 1),” J. Cryst. Growth 340(1), 34–40 (2012).
[Crossref]

Schneider, R.

R. Walther, D. Litvinov, M. Fotouhi, R. Schneider, D. Gerthsen, R. Vohringer, D. Z. Hu, and D. M. Schaadt, “Microstructure of PAMBE-grown InN layers on Si(1 1 1),” J. Cryst. Growth 340(1), 34–40 (2012).
[Crossref]

Schwarz, U. T.

Shivaraman, R.

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and ipurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

Smith, D. J.

E. Francesco Pecora, W. Zhang, A. Y. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100, 061111 (2012).

Smorchkova, I.

B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, “Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 77(18), 2885 (2000).
[Crossref]

Speck, J. S.

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and ipurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, “Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 77(18), 2885 (2000).
[Crossref]

Stutz, C. E.

J. E. Van Nostrand, K. L. Averett, R. Cortez, J. Boeckl, C. E. Stutz, N. A. Sanford, A. V. Davydov, and J. D. Albrecht, “Molecular beam epitaxial growth of high-quality GaN nanocolumns,” J. Cryst. Growth 287(2), 500–503 (2006).
[Crossref]

Sun, G.

G. Sun, G. Xu, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
[Crossref]

Suzuki, T.

T. Iwanaga, T. Suzuki, S. Yagi, and T. Motooka, “Optical absorption properties of Mg-doped GaN nanocolumns,” J. Appl. Phys. 98(10), 104303 (2005).
[Crossref]

Tada, M.

A. Kikuchi, M. Tada, K. Miwa, and K. Kishino, “Growth and characterization of InGaN/GaN nanocolumn LED,” Proc. SPIE 6129, 612905, 612905-8 (2006).
[Crossref]

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) si substrate,” Jpn. J. Appl. Phys. 43(No. 12A), L1524–L1526 (2004).
[Crossref]

Takeda, S.

Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
[Crossref]

Tamura, N.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
[Crossref]

Tanaka, S.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
[Crossref]

Tang, T.-Y.

H.-C. Wang, T.-Y. Tang, C. C. Yang, T. Malinauskas, and K. Jarasiunas, “Carrier dynamics in coalescence overgrowth of GaN nanocolumns,” Thin Solid Films 519(2), 863–867 (2010).
[Crossref]

Taniguchi, Y.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
[Crossref]

Taniyasu, Y.

Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett. 99(25), 251112 (2011).
[Crossref]

Tansu, N.

G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
[Crossref]

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett. 98(17), 171111 (2011).
[Crossref]

G. Sun, G. Xu, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
[Crossref]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett. 97(11), 111105 (2010).
[Crossref]

Y. K. Ee, X. H. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth 312(8), 1311–1315 (2010).
[Crossref]

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nano-patterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1066–1072 (2009).
[Crossref]

Tijeroz, J. M. G.

F. Calley, F. J. Sanchez, J. M. G. Tijeroz, M. A. Sanchez-Garcia, E. Calleja, and R. Beresfordx, “Exciton and donor–acceptor recombination in undoped GaN on Si(111),” Semicond. Sci. Technol. 12(11), 1396–1403 (1997).
[Crossref]

Tu, L. W.

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(10), 1601 (2003).
[Crossref]

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-Assembled Vertical Gallium Nitride Nanorods,” Appl. Phys. Lett. 82, 1601–1603 (2003).
[Crossref]

Twigg, M.

Van Nostrand, J. E.

K. L. Averett, J. E. Van Nostrand, J. D. Albrecht, Y. S. Chen, and C. C. Yang, “Epitaxial overgrowth of GaN nanocolumns,” J. Vac. Sci. Technol. B 25(3), 964–968 (2007).
[Crossref]

J. E. Van Nostrand, K. L. Averett, R. Cortez, J. Boeckl, C. E. Stutz, N. A. Sanford, A. V. Davydov, and J. D. Albrecht, “Molecular beam epitaxial growth of high-quality GaN nanocolumns,” J. Cryst. Growth 287(2), 500–503 (2006).
[Crossref]

Vinci, R. P.

Y. K. Ee, X. H. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth 312(8), 1311–1315 (2010).
[Crossref]

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nano-patterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1066–1072 (2009).
[Crossref]

Vohringer, R.

R. Walther, D. Litvinov, M. Fotouhi, R. Schneider, D. Gerthsen, R. Vohringer, D. Z. Hu, and D. M. Schaadt, “Microstructure of PAMBE-grown InN layers on Si(1 1 1),” J. Cryst. Growth 340(1), 34–40 (2012).
[Crossref]

Vurgaftman, I.

Walther, R.

R. Walther, D. Litvinov, M. Fotouhi, R. Schneider, D. Gerthsen, R. Vohringer, D. Z. Hu, and D. M. Schaadt, “Microstructure of PAMBE-grown InN layers on Si(1 1 1),” J. Cryst. Growth 340(1), 34–40 (2012).
[Crossref]

Wang, H.-C.

H.-C. Wang, T.-Y. Tang, C. C. Yang, T. Malinauskas, and K. Jarasiunas, “Carrier dynamics in coalescence overgrowth of GaN nanocolumns,” Thin Solid Films 519(2), 863–867 (2010).
[Crossref]

Wang, S. C.

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Wetzel, C.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
[Crossref]

C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R. J. Molnar, T. D. Moustakas, E. N. Mokhov, and P. G. Baranov, “Strongly localized excitons in gallium nitride,” Appl. Phys. Lett. 68(18), 2556 (1996).
[Crossref]

Wu, F.

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and ipurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

Xu, G.

G. Sun, G. Xu, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
[Crossref]

Yagi, S.

T. Iwanaga, T. Suzuki, S. Yagi, and T. Motooka, “Optical absorption properties of Mg-doped GaN nanocolumns,” J. Appl. Phys. 98(10), 104303 (2005).
[Crossref]

Yang, C. C.

H.-C. Wang, T.-Y. Tang, C. C. Yang, T. Malinauskas, and K. Jarasiunas, “Carrier dynamics in coalescence overgrowth of GaN nanocolumns,” Thin Solid Films 519(2), 863–867 (2010).
[Crossref]

K. L. Averett, J. E. Van Nostrand, J. D. Albrecht, Y. S. Chen, and C. C. Yang, “Epitaxial overgrowth of GaN nanocolumns,” J. Vac. Sci. Technol. B 25(3), 964–968 (2007).
[Crossref]

Yin, J.

E. Francesco Pecora, W. Zhang, A. Y. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100, 061111 (2012).

You, S.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
[Crossref]

Yu, P. C.

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

Zavada, J.

Zhang, J.

G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
[Crossref]

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett. 98(17), 171111 (2011).
[Crossref]

G. Sun, G. Xu, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
[Crossref]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett. 97(11), 111105 (2010).
[Crossref]

Zhang, W.

E. Francesco Pecora, W. Zhang, A. Y. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100, 061111 (2012).

Zhao, H.

G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
[Crossref]

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett. 98(17), 171111 (2011).
[Crossref]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett. 97(11), 111105 (2010).
[Crossref]

Zhao, H. P.

G. Sun, G. Xu, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
[Crossref]

Zhao, L.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
[Crossref]

Zhou, L.

E. Francesco Pecora, W. Zhang, A. Y. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100, 061111 (2012).

Zhu, M.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
[Crossref]

Appl. Phys. Lett. (12)

G. Sun, G. Xu, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of fast and slow decays in InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(8), 081104 (2011).
[Crossref]

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-Assembled Vertical Gallium Nitride Nanorods,” Appl. Phys. Lett. 82, 1601–1603 (2003).
[Crossref]

H.-M. Kim, D. S. Kim, D. Y. Kim, T. W. Kang, Y.-H. Cho, and K. S. Chung, “Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy,” Appl. Phys. Lett. 81, 2193 (2001).

Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara, “Strong luminescence from dislocation-free GaN nanopillars,” Appl. Phys. Lett. 85(12), 2340 (2004).
[Crossref]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett. 97(11), 111105 (2010).
[Crossref]

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett. 98(17), 171111 (2011).
[Crossref]

Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett. 99(25), 251112 (2011).
[Crossref]

E. Francesco Pecora, W. Zhang, A. Y. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100, 061111 (2012).

B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, “Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 77(18), 2885 (2000).
[Crossref]

L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, “Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(10), 1601 (2003).
[Crossref]

C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R. J. Molnar, T. D. Moustakas, E. N. Mokhov, and P. G. Baranov, “Strongly localized excitons in gallium nitride,” Appl. Phys. Lett. 68(18), 2556 (1996).
[Crossref]

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett. 98(15), 151102 (2011).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (2)

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nano-patterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1066–1072 (2009).
[Crossref]

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

J. Appl. Phys. (1)

T. Iwanaga, T. Suzuki, S. Yagi, and T. Motooka, “Optical absorption properties of Mg-doped GaN nanocolumns,” J. Appl. Phys. 98(10), 104303 (2005).
[Crossref]

J. Cryst. Growth (5)

J. E. Van Nostrand, K. L. Averett, R. Cortez, J. Boeckl, C. E. Stutz, N. A. Sanford, A. V. Davydov, and J. D. Albrecht, “Molecular beam epitaxial growth of high-quality GaN nanocolumns,” J. Cryst. Growth 287(2), 500–503 (2006).
[Crossref]

R. Walther, D. Litvinov, M. Fotouhi, R. Schneider, D. Gerthsen, R. Vohringer, D. Z. Hu, and D. M. Schaadt, “Microstructure of PAMBE-grown InN layers on Si(1 1 1),” J. Cryst. Growth 340(1), 34–40 (2012).
[Crossref]

Y. K. Ee, X. H. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth 312(8), 1311–1315 (2010).
[Crossref]

G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
[Crossref]

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and ipurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

J. Vac. Sci. Technol. B (1)

K. L. Averett, J. E. Van Nostrand, J. D. Albrecht, Y. S. Chen, and C. C. Yang, “Epitaxial overgrowth of GaN nanocolumns,” J. Vac. Sci. Technol. B 25(3), 964–968 (2007).
[Crossref]

Jpn. J. Appl. Phys. (2)

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) si substrate,” Jpn. J. Appl. Phys. 43(No. 12A), L1524–L1526 (2004).
[Crossref]

T. Matsumoto and M. Aoki, “Temperature Dependence of Photoluminescence from GaN,” Jpn. J. Appl. Phys. 13(11), 1804–1807 (1974).
[Crossref]

Jpn. J. Appl. Phys. Vol. (1)

K. Kusakabe, A. Kikuchi, and K. Kishino, “Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. Vol. 40(Part 2, No. 3A), L192–L194 (2001).
[Crossref]

Nanotechnology (1)

C. H. Chiu, C. C. Lin, H. V. Han, C. Y. Liu, Y. H. Chen, Y. P. Lan, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks,” Nanotechnology 23(4), 045303 (2012).
[Crossref] [PubMed]

Opt. Mater. Express (4)

Phys. Rev. B (1)

E. Calleja, M. A. Sanchez-Garcya, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. Ploog, “Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy,” Phys. Rev. B 62(24), 16826–16834 (2000).
[Crossref]

Physica E (1)

J. Sanchez-Paramo, J. M. Calleja, M. A. Sanchez-Garcia, E. Calleja, and U. Jahn, “Structural and optical characterization of intrinsic GaN nanocolumns,” Physica E 13(2-4), 1070–1073 (2002).
[Crossref]

Proc. SPIE (1)

A. Kikuchi, M. Tada, K. Miwa, and K. Kishino, “Growth and characterization of InGaN/GaN nanocolumn LED,” Proc. SPIE 6129, 612905, 612905-8 (2006).
[Crossref]

Semicond. Sci. Technol. (1)

F. Calley, F. J. Sanchez, J. M. G. Tijeroz, M. A. Sanchez-Garcia, E. Calleja, and R. Beresfordx, “Exciton and donor–acceptor recombination in undoped GaN on Si(111),” Semicond. Sci. Technol. 12(11), 1396–1403 (1997).
[Crossref]

Thin Solid Films (1)

H.-C. Wang, T.-Y. Tang, C. C. Yang, T. Malinauskas, and K. Jarasiunas, “Carrier dynamics in coalescence overgrowth of GaN nanocolumns,” Thin Solid Films 519(2), 863–867 (2010).
[Crossref]

Other (2)

C. C. Lin, C. H. Chiu, H. W. Huang, S. P. Chang, and H. C. Kuo, “Highly efficient InGaN-based light emitting devices grown on nanoscale patterned substrates by MOCVD,” Proc. SPIE, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III, 83120C (2011).

A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. T. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, and B. Hahn, “Measurement of the internal quantum efficiency of InGaN quantum wells,” SPIE Vol. 6486 (2007).

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (7)

Fig. 1
Fig. 1

(a) Plan-view and (b) cross-section SEM images of sample A.

Fig. 2
Fig. 2

(a) TEM image of an overgrown column in sample A and (b) a high-resolution TEM image of the junction between the column and its overgrown bell-shaped structure, as circled in part (a).

Fig. 3
Fig. 3

(a) Plan-view and (b) cross-section SEM images of sample B.

Fig. 4
Fig. 4

(a) TEM image of several overgrown bell-shaped structures in sample B with two of them being coalesced; (b) Magnified TEM image of the circled portion in part (a).

Fig. 5
Fig. 5

XRD rocking curves in the (0002) and (10-12) planes of the two samples.

Fig. 6
Fig. 6

Normalized PL spectra of the two samples at 10 K (a) and 300 K (b).

Fig. 7
Fig. 7

Temperature-dependent integrated PL intensities of the two samples.

Metrics