Abstract

Electroluminescent (EL) color shift of Si-rich SiOx with its O/Si composition detuned by changing the RF plasma powers during N2O/SiH4 vapor deposition are investigated. The higher O/Si composition ratio of Si-rich SiOx films when enlarging the RF plasma power contributes to an increment of the insulating SiO2 resistivity and the shrinkage silicon quantum dots (Si-QDs), indicating the fewer injected carriers in Si-QDs. The increasing oxygen content in Si-rich SiOx shortens the diffusion length of Si atoms to constrain the buried Si-QD size. In contrast to the blue-shift of EL peak wavelength induced by enlarging the RF plasma powers, the lengthening deposition time causes a thicker Si-rich SiOx film with more excessive Si atoms, thus providing larger Si-QDs for longer wavelength EL. The EL spectra of metal-oxide-semiconductor light-emitting diodes are red-shifted with increasing the Si-rich SiOx thickness due to the varied Si-QD size and degraded electron conductivity. The uniformity of Si-QDs in Si-rich SiOx layer contributes to the obvious wavelength shift when applying the biased current. The EL peak has a slightly blue-shifted phenomenon when the biased current increases under the band filling effect.

© 2013 OSA

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    [CrossRef]
  23. G.-R. Lin and C.-J. Lin, “Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate,” J. Appl. Phys.95(12), 8484–8486 (2004).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  26. N. Tansu and L. J. Mawst, “Current injection efficiency of InGaAsN quantum-well lasers,” J. Appl. Phys.97(5), 054502 (2005).
    [CrossRef]
  27. H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]

2012 (5)

C.-H. Cheng, C.-L. Wu, C.-C. Chen, L.-H. Tsai, Y.-H. Lin, and G.-R. Lin, “Si-rich SixC1-x light-emitting diodes with buried Si quantum dots,” IEEE Photonics J.4(5), 1762–1775 (2012).
[CrossRef]

A. Rodriguez, J. Arenas, and J. C. Alonso, “Photoluminescence mechanisms in silicon quantum dots embedded in nanometric chlorinated-silicon nitride films,” J. Lumin.132(9), 2385–2389 (2012).
[CrossRef]

G.-R. Lin, C.-H. Chang, C.-H. Cheng, C.-I. Wu, and P. S. Wang, “Transient UV and visible luminescent dynamics of Si-rich SiOx metal–oxide–semiconductor light-emitting diodes,” IEEE Photonics J.4(5), 1351–1364 (2012).
[CrossRef]

I. E. Titkov, D. A. Sannikov, Y.-M. Park, and J.-K. Son, “Blue light emitting diode internal and injection efficiency,” AIP Adv.2(3), 032117 (2012).
[CrossRef]

K.-Y. Kuo, S.-W. Hsu, P.-R. Huang, W.-L. Chuang, C.-C. Liu, and P.-T. Lee, “Optical properties and sub-bandgap formation of nano-crystalline Si quantum dots embedded ZnO thin film,” Opt. Express20(10), 10470–10475 (2012).
[CrossRef] [PubMed]

2011 (1)

B.-H. Lai, C.-H. Cheng, and G.-R. Lin, “Multicolor ITO/SiOx/p-Si/Al light emitting diodes with improved emission efficiency by small Si quantum dots,” IEEE J. Quantum Electron.47(5), 698–704 (2011).
[CrossRef]

2010 (3)

B.-H. Lai, C.-H. Cheng, Y.-H. Pai, and G.-R. Lin, “Plasma power controlled deposition of SiOx with manipulated Si Quantum Dot size for photoluminescent wavelength tailoring,” Opt. Express18(5), 4449–4456 (2010).
[CrossRef] [PubMed]

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
[CrossRef]

G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

2008 (1)

2007 (4)

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” J. Appl. Phys.46(35), L833–L835 (2007).
[CrossRef]

G.-R. Lin, C.-J. Lin, and C.-K. Lin, “Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids,” Opt. Express15(5), 2555–2563 (2007).
[CrossRef] [PubMed]

G.-R. Lin, C.-J. Lin, and H.-C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett.91(9), 093122 (2007).
[CrossRef]

G. Chakraborty, S. Chattopadhyay, C. K. Sarkar, and C. Pramanik, “Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures,” J. Appl. Phys.101(2), 024315 (2007).
[CrossRef]

2005 (3)

N. Tansu and L. J. Mawst, “Current injection efficiency of InGaAsN quantum-well lasers,” J. Appl. Phys.97(5), 054502 (2005).
[CrossRef]

C.-J. Lin and G.-R. Lin, “Defect-enhanced visible electroluminescence of multi-energy silicon-implanted silicon dioxide film,” IEEE J. Quantum Electron.41(3), 441–447 (2005).
[CrossRef]

G.-R. Lin, C.-J. Lin, C.-K. Lin, L.-J. Chou, and Y.-L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

2004 (2)

G.-R. Lin, C.-J. Lin, and K.-C. Yu, “Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substrate,” J. Appl. Phys.96(5), 3025–3027 (2004).
[CrossRef]

G.-R. Lin and C.-J. Lin, “Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate,” J. Appl. Phys.95(12), 8484–8486 (2004).
[CrossRef]

2003 (1)

N. Tansu and L. J. Mawst, “The role of hole leakage in 1300-nm InGaAsN quantum-well lasers,” Appl. Phys. Lett.82(10), 1500–1502 (2003).
[CrossRef]

2002 (1)

G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys., A Mater. Sci. Process.74(1), 1–5 (2002).
[CrossRef]

2001 (1)

N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

2000 (2)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

F. Iacona, G. Franzo, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys.87(3), 1295–1303 (2000).
[CrossRef]

1997 (1)

H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys.82(8), 4028–4032 (1997).
[CrossRef]

1995 (1)

G. G. Qin, A. P. Li, B. R. Zhang, and B.-C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys.78(3), 2006–2009 (1995).
[CrossRef]

1993 (1)

C.-H. Lin, S.-C. Lee, and Y.-F. Chen, “Strong room-temperature photoluminescence of hydrogenated amorphous silicon oxide and its correlation to porous silicon,” Appl. Phys. Lett.63(7), 902–904 (1993).
[CrossRef]

1991 (1)

Q. Ye, R. Tsu, and E. H. Nicollian, “Resonant tunneling via microcrystalline-silicon quantum confinement,” Phys. Rev. B Condens. Matter44(4), 1806–1811 (1991).
[CrossRef] [PubMed]

1990 (1)

L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett.57(10), 1046–1048 (1990).
[CrossRef]

Alonso, J. C.

A. Rodriguez, J. Arenas, and J. C. Alonso, “Photoluminescence mechanisms in silicon quantum dots embedded in nanometric chlorinated-silicon nitride films,” J. Lumin.132(9), 2385–2389 (2012).
[CrossRef]

Arenas, J.

A. Rodriguez, J. Arenas, and J. C. Alonso, “Photoluminescence mechanisms in silicon quantum dots embedded in nanometric chlorinated-silicon nitride films,” J. Lumin.132(9), 2385–2389 (2012).
[CrossRef]

Arif, R. A.

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
[CrossRef]

Bao, X.-M.

H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys.82(8), 4028–4032 (1997).
[CrossRef]

Canham, L. T.

L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett.57(10), 1046–1048 (1990).
[CrossRef]

Chakraborty, G.

G. Chakraborty, S. Chattopadhyay, C. K. Sarkar, and C. Pramanik, “Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures,” J. Appl. Phys.101(2), 024315 (2007).
[CrossRef]

Chang, C.-H.

G.-R. Lin, C.-H. Chang, C.-H. Cheng, C.-I. Wu, and P. S. Wang, “Transient UV and visible luminescent dynamics of Si-rich SiOx metal–oxide–semiconductor light-emitting diodes,” IEEE Photonics J.4(5), 1351–1364 (2012).
[CrossRef]

Chattopadhyay, S.

G. Chakraborty, S. Chattopadhyay, C. K. Sarkar, and C. Pramanik, “Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures,” J. Appl. Phys.101(2), 024315 (2007).
[CrossRef]

Chen, C.-C.

C.-H. Cheng, C.-L. Wu, C.-C. Chen, L.-H. Tsai, Y.-H. Lin, and G.-R. Lin, “Si-rich SixC1-x light-emitting diodes with buried Si quantum dots,” IEEE Photonics J.4(5), 1762–1775 (2012).
[CrossRef]

G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Chen, Y.-F.

C.-H. Lin, S.-C. Lee, and Y.-F. Chen, “Strong room-temperature photoluminescence of hydrogenated amorphous silicon oxide and its correlation to porous silicon,” Appl. Phys. Lett.63(7), 902–904 (1993).
[CrossRef]

Cheng, C.-H.

C.-H. Cheng, C.-L. Wu, C.-C. Chen, L.-H. Tsai, Y.-H. Lin, and G.-R. Lin, “Si-rich SixC1-x light-emitting diodes with buried Si quantum dots,” IEEE Photonics J.4(5), 1762–1775 (2012).
[CrossRef]

G.-R. Lin, C.-H. Chang, C.-H. Cheng, C.-I. Wu, and P. S. Wang, “Transient UV and visible luminescent dynamics of Si-rich SiOx metal–oxide–semiconductor light-emitting diodes,” IEEE Photonics J.4(5), 1351–1364 (2012).
[CrossRef]

B.-H. Lai, C.-H. Cheng, and G.-R. Lin, “Multicolor ITO/SiOx/p-Si/Al light emitting diodes with improved emission efficiency by small Si quantum dots,” IEEE J. Quantum Electron.47(5), 698–704 (2011).
[CrossRef]

B.-H. Lai, C.-H. Cheng, Y.-H. Pai, and G.-R. Lin, “Plasma power controlled deposition of SiOx with manipulated Si Quantum Dot size for photoluminescent wavelength tailoring,” Opt. Express18(5), 4449–4456 (2010).
[CrossRef] [PubMed]

Choi, C.-J.

N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Chou, L.-J.

G.-R. Lin, C.-J. Lin, C.-K. Lin, L.-J. Chou, and Y.-L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Chuang, W.-L.

Chueh, Y.-L.

G.-R. Lin, C.-J. Lin, C.-K. Lin, L.-J. Chou, and Y.-L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Dal Negro, L.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Di Stefano, G.

G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys., A Mater. Sci. Process.74(1), 1–5 (2002).
[CrossRef]

Fallica, P. G.

G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys., A Mater. Sci. Process.74(1), 1–5 (2002).
[CrossRef]

Franzo, G.

F. Iacona, G. Franzo, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys.87(3), 1295–1303 (2000).
[CrossRef]

Franzò, G.

G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys., A Mater. Sci. Process.74(1), 1–5 (2002).
[CrossRef]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Hsu, S.-W.

Huang, P.-R.

Iacona, F.

G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys., A Mater. Sci. Process.74(1), 1–5 (2002).
[CrossRef]

F. Iacona, G. Franzo, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys.87(3), 1295–1303 (2000).
[CrossRef]

Irrera, A.

G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys., A Mater. Sci. Process.74(1), 1–5 (2002).
[CrossRef]

Konagai, M.

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” J. Appl. Phys.46(35), L833–L835 (2007).
[CrossRef]

Kuo, H.-C.

G.-R. Lin, C.-J. Lin, and H.-C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett.91(9), 093122 (2007).
[CrossRef]

Kuo, K.-Y.

Kurokawa, Y.

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” J. Appl. Phys.46(35), L833–L835 (2007).
[CrossRef]

Lai, B.-H.

B.-H. Lai, C.-H. Cheng, and G.-R. Lin, “Multicolor ITO/SiOx/p-Si/Al light emitting diodes with improved emission efficiency by small Si quantum dots,” IEEE J. Quantum Electron.47(5), 698–704 (2011).
[CrossRef]

B.-H. Lai, C.-H. Cheng, Y.-H. Pai, and G.-R. Lin, “Plasma power controlled deposition of SiOx with manipulated Si Quantum Dot size for photoluminescent wavelength tailoring,” Opt. Express18(5), 4449–4456 (2010).
[CrossRef] [PubMed]

Lee, P.-T.

Lee, S.-C.

C.-H. Lin, S.-C. Lee, and Y.-F. Chen, “Strong room-temperature photoluminescence of hydrogenated amorphous silicon oxide and its correlation to porous silicon,” Appl. Phys. Lett.63(7), 902–904 (1993).
[CrossRef]

Li, A. P.

G. G. Qin, A. P. Li, B. R. Zhang, and B.-C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys.78(3), 2006–2009 (1995).
[CrossRef]

Li, B.-C.

G. G. Qin, A. P. Li, B. R. Zhang, and B.-C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys.78(3), 2006–2009 (1995).
[CrossRef]

Li, N.-S.

H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys.82(8), 4028–4032 (1997).
[CrossRef]

Lin, C.-H.

C.-H. Lin, S.-C. Lee, and Y.-F. Chen, “Strong room-temperature photoluminescence of hydrogenated amorphous silicon oxide and its correlation to porous silicon,” Appl. Phys. Lett.63(7), 902–904 (1993).
[CrossRef]

Lin, C.-J.

G.-R. Lin, C.-J. Lin, and C.-K. Lin, “Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids,” Opt. Express15(5), 2555–2563 (2007).
[CrossRef] [PubMed]

G.-R. Lin, C.-J. Lin, and H.-C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett.91(9), 093122 (2007).
[CrossRef]

C.-J. Lin and G.-R. Lin, “Defect-enhanced visible electroluminescence of multi-energy silicon-implanted silicon dioxide film,” IEEE J. Quantum Electron.41(3), 441–447 (2005).
[CrossRef]

G.-R. Lin, C.-J. Lin, C.-K. Lin, L.-J. Chou, and Y.-L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

G.-R. Lin, C.-J. Lin, and K.-C. Yu, “Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substrate,” J. Appl. Phys.96(5), 3025–3027 (2004).
[CrossRef]

G.-R. Lin and C.-J. Lin, “Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate,” J. Appl. Phys.95(12), 8484–8486 (2004).
[CrossRef]

Lin, C.-K.

G.-R. Lin, C.-J. Lin, and C.-K. Lin, “Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids,” Opt. Express15(5), 2555–2563 (2007).
[CrossRef] [PubMed]

G.-R. Lin, C.-J. Lin, C.-K. Lin, L.-J. Chou, and Y.-L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

Lin, C.-T.

G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

G.-R. Lin, Y.-H. Pai, and C.-T. Lin, “Microwatt MOSLED using SiOx with buried Si nanocrystals on Si nano-pillar array,” J. Lightwave Technol.26(11), 1486–1491 (2008).
[CrossRef]

Lin, G.-R.

C.-H. Cheng, C.-L. Wu, C.-C. Chen, L.-H. Tsai, Y.-H. Lin, and G.-R. Lin, “Si-rich SixC1-x light-emitting diodes with buried Si quantum dots,” IEEE Photonics J.4(5), 1762–1775 (2012).
[CrossRef]

G.-R. Lin, C.-H. Chang, C.-H. Cheng, C.-I. Wu, and P. S. Wang, “Transient UV and visible luminescent dynamics of Si-rich SiOx metal–oxide–semiconductor light-emitting diodes,” IEEE Photonics J.4(5), 1351–1364 (2012).
[CrossRef]

B.-H. Lai, C.-H. Cheng, and G.-R. Lin, “Multicolor ITO/SiOx/p-Si/Al light emitting diodes with improved emission efficiency by small Si quantum dots,” IEEE J. Quantum Electron.47(5), 698–704 (2011).
[CrossRef]

B.-H. Lai, C.-H. Cheng, Y.-H. Pai, and G.-R. Lin, “Plasma power controlled deposition of SiOx with manipulated Si Quantum Dot size for photoluminescent wavelength tailoring,” Opt. Express18(5), 4449–4456 (2010).
[CrossRef] [PubMed]

G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

G.-R. Lin, Y.-H. Pai, and C.-T. Lin, “Microwatt MOSLED using SiOx with buried Si nanocrystals on Si nano-pillar array,” J. Lightwave Technol.26(11), 1486–1491 (2008).
[CrossRef]

G.-R. Lin, C.-J. Lin, and H.-C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett.91(9), 093122 (2007).
[CrossRef]

G.-R. Lin, C.-J. Lin, and C.-K. Lin, “Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids,” Opt. Express15(5), 2555–2563 (2007).
[CrossRef] [PubMed]

C.-J. Lin and G.-R. Lin, “Defect-enhanced visible electroluminescence of multi-energy silicon-implanted silicon dioxide film,” IEEE J. Quantum Electron.41(3), 441–447 (2005).
[CrossRef]

G.-R. Lin, C.-J. Lin, C.-K. Lin, L.-J. Chou, and Y.-L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

G.-R. Lin, C.-J. Lin, and K.-C. Yu, “Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substrate,” J. Appl. Phys.96(5), 3025–3027 (2004).
[CrossRef]

G.-R. Lin and C.-J. Lin, “Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate,” J. Appl. Phys.95(12), 8484–8486 (2004).
[CrossRef]

Lin, Y.-H.

C.-H. Cheng, C.-L. Wu, C.-C. Chen, L.-H. Tsai, Y.-H. Lin, and G.-R. Lin, “Si-rich SixC1-x light-emitting diodes with buried Si quantum dots,” IEEE Photonics J.4(5), 1762–1775 (2012).
[CrossRef]

Liu, C.-C.

Liu, G.

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
[CrossRef]

Mawst, L. J.

N. Tansu and L. J. Mawst, “Current injection efficiency of InGaAsN quantum-well lasers,” J. Appl. Phys.97(5), 054502 (2005).
[CrossRef]

N. Tansu and L. J. Mawst, “The role of hole leakage in 1300-nm InGaAsN quantum-well lasers,” Appl. Phys. Lett.82(10), 1500–1502 (2003).
[CrossRef]

Mazzoleni, C.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Miritello, M.

G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys., A Mater. Sci. Process.74(1), 1–5 (2002).
[CrossRef]

Miyajima, S.

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” J. Appl. Phys.46(35), L833–L835 (2007).
[CrossRef]

Moreira, E. C.

G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys., A Mater. Sci. Process.74(1), 1–5 (2002).
[CrossRef]

Nicollian, E. H.

Q. Ye, R. Tsu, and E. H. Nicollian, “Resonant tunneling via microcrystalline-silicon quantum confinement,” Phys. Rev. B Condens. Matter44(4), 1806–1811 (1991).
[CrossRef] [PubMed]

Pai, Y.-H.

Park, N.-M.

N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Park, S.-J.

N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Park, Y.-M.

I. E. Titkov, D. A. Sannikov, Y.-M. Park, and J.-K. Son, “Blue light emitting diode internal and injection efficiency,” AIP Adv.2(3), 032117 (2012).
[CrossRef]

Pavesi, L.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Pramanik, C.

G. Chakraborty, S. Chattopadhyay, C. K. Sarkar, and C. Pramanik, “Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures,” J. Appl. Phys.101(2), 024315 (2007).
[CrossRef]

Priolo, F.

G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys., A Mater. Sci. Process.74(1), 1–5 (2002).
[CrossRef]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Qin, G. G.

G. G. Qin, A. P. Li, B. R. Zhang, and B.-C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys.78(3), 2006–2009 (1995).
[CrossRef]

Rodriguez, A.

A. Rodriguez, J. Arenas, and J. C. Alonso, “Photoluminescence mechanisms in silicon quantum dots embedded in nanometric chlorinated-silicon nitride films,” J. Lumin.132(9), 2385–2389 (2012).
[CrossRef]

Sanfilippo, D.

G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys., A Mater. Sci. Process.74(1), 1–5 (2002).
[CrossRef]

Sannikov, D. A.

I. E. Titkov, D. A. Sannikov, Y.-M. Park, and J.-K. Son, “Blue light emitting diode internal and injection efficiency,” AIP Adv.2(3), 032117 (2012).
[CrossRef]

Sarkar, C. K.

G. Chakraborty, S. Chattopadhyay, C. K. Sarkar, and C. Pramanik, “Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures,” J. Appl. Phys.101(2), 024315 (2007).
[CrossRef]

Seong, T.-Y.

N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Son, J.-K.

I. E. Titkov, D. A. Sannikov, Y.-M. Park, and J.-K. Son, “Blue light emitting diode internal and injection efficiency,” AIP Adv.2(3), 032117 (2012).
[CrossRef]

Song, H.-Z.

H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys.82(8), 4028–4032 (1997).
[CrossRef]

Spinella, C.

F. Iacona, G. Franzo, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys.87(3), 1295–1303 (2000).
[CrossRef]

Tansu, N.

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
[CrossRef]

N. Tansu and L. J. Mawst, “Current injection efficiency of InGaAsN quantum-well lasers,” J. Appl. Phys.97(5), 054502 (2005).
[CrossRef]

N. Tansu and L. J. Mawst, “The role of hole leakage in 1300-nm InGaAsN quantum-well lasers,” Appl. Phys. Lett.82(10), 1500–1502 (2003).
[CrossRef]

Titkov, I. E.

I. E. Titkov, D. A. Sannikov, Y.-M. Park, and J.-K. Son, “Blue light emitting diode internal and injection efficiency,” AIP Adv.2(3), 032117 (2012).
[CrossRef]

Tomita, S.

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” J. Appl. Phys.46(35), L833–L835 (2007).
[CrossRef]

Tsai, L.-H.

C.-H. Cheng, C.-L. Wu, C.-C. Chen, L.-H. Tsai, Y.-H. Lin, and G.-R. Lin, “Si-rich SixC1-x light-emitting diodes with buried Si quantum dots,” IEEE Photonics J.4(5), 1762–1775 (2012).
[CrossRef]

Tsu, R.

Q. Ye, R. Tsu, and E. H. Nicollian, “Resonant tunneling via microcrystalline-silicon quantum confinement,” Phys. Rev. B Condens. Matter44(4), 1806–1811 (1991).
[CrossRef] [PubMed]

Wang, P. S.

G.-R. Lin, C.-H. Chang, C.-H. Cheng, C.-I. Wu, and P. S. Wang, “Transient UV and visible luminescent dynamics of Si-rich SiOx metal–oxide–semiconductor light-emitting diodes,” IEEE Photonics J.4(5), 1351–1364 (2012).
[CrossRef]

Wu, C.-I.

G.-R. Lin, C.-H. Chang, C.-H. Cheng, C.-I. Wu, and P. S. Wang, “Transient UV and visible luminescent dynamics of Si-rich SiOx metal–oxide–semiconductor light-emitting diodes,” IEEE Photonics J.4(5), 1351–1364 (2012).
[CrossRef]

Wu, C.-L.

C.-H. Cheng, C.-L. Wu, C.-C. Chen, L.-H. Tsai, Y.-H. Lin, and G.-R. Lin, “Si-rich SixC1-x light-emitting diodes with buried Si quantum dots,” IEEE Photonics J.4(5), 1762–1775 (2012).
[CrossRef]

Yamada, A.

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” J. Appl. Phys.46(35), L833–L835 (2007).
[CrossRef]

Ye, Q.

Q. Ye, R. Tsu, and E. H. Nicollian, “Resonant tunneling via microcrystalline-silicon quantum confinement,” Phys. Rev. B Condens. Matter44(4), 1806–1811 (1991).
[CrossRef] [PubMed]

Yu, K.-C.

G.-R. Lin, C.-J. Lin, and K.-C. Yu, “Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substrate,” J. Appl. Phys.96(5), 3025–3027 (2004).
[CrossRef]

Zhang, B. R.

G. G. Qin, A. P. Li, B. R. Zhang, and B.-C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys.78(3), 2006–2009 (1995).
[CrossRef]

Zhang, J.-Y.

H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys.82(8), 4028–4032 (1997).
[CrossRef]

Zhao, H.

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
[CrossRef]

AIP Adv. (1)

I. E. Titkov, D. A. Sannikov, Y.-M. Park, and J.-K. Son, “Blue light emitting diode internal and injection efficiency,” AIP Adv.2(3), 032117 (2012).
[CrossRef]

Appl. Phys. Lett. (5)

N. Tansu and L. J. Mawst, “The role of hole leakage in 1300-nm InGaAsN quantum-well lasers,” Appl. Phys. Lett.82(10), 1500–1502 (2003).
[CrossRef]

L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett.57(10), 1046–1048 (1990).
[CrossRef]

C.-H. Lin, S.-C. Lee, and Y.-F. Chen, “Strong room-temperature photoluminescence of hydrogenated amorphous silicon oxide and its correlation to porous silicon,” Appl. Phys. Lett.63(7), 902–904 (1993).
[CrossRef]

G.-R. Lin, C.-J. Lin, and H.-C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett.91(9), 093122 (2007).
[CrossRef]

G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Appl. Phys., A Mater. Sci. Process. (1)

G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys., A Mater. Sci. Process.74(1), 1–5 (2002).
[CrossRef]

IEEE J. Quantum Electron. (2)

C.-J. Lin and G.-R. Lin, “Defect-enhanced visible electroluminescence of multi-energy silicon-implanted silicon dioxide film,” IEEE J. Quantum Electron.41(3), 441–447 (2005).
[CrossRef]

B.-H. Lai, C.-H. Cheng, and G.-R. Lin, “Multicolor ITO/SiOx/p-Si/Al light emitting diodes with improved emission efficiency by small Si quantum dots,” IEEE J. Quantum Electron.47(5), 698–704 (2011).
[CrossRef]

IEEE Photonics J. (2)

C.-H. Cheng, C.-L. Wu, C.-C. Chen, L.-H. Tsai, Y.-H. Lin, and G.-R. Lin, “Si-rich SixC1-x light-emitting diodes with buried Si quantum dots,” IEEE Photonics J.4(5), 1762–1775 (2012).
[CrossRef]

G.-R. Lin, C.-H. Chang, C.-H. Cheng, C.-I. Wu, and P. S. Wang, “Transient UV and visible luminescent dynamics of Si-rich SiOx metal–oxide–semiconductor light-emitting diodes,” IEEE Photonics J.4(5), 1351–1364 (2012).
[CrossRef]

J. Appl. Phys. (9)

G. Chakraborty, S. Chattopadhyay, C. K. Sarkar, and C. Pramanik, “Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures,” J. Appl. Phys.101(2), 024315 (2007).
[CrossRef]

N. Tansu and L. J. Mawst, “Current injection efficiency of InGaAsN quantum-well lasers,” J. Appl. Phys.97(5), 054502 (2005).
[CrossRef]

G.-R. Lin, C.-J. Lin, C.-K. Lin, L.-J. Chou, and Y.-L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys.97(9), 094306 (2005).
[CrossRef]

G.-R. Lin, C.-J. Lin, and K.-C. Yu, “Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substrate,” J. Appl. Phys.96(5), 3025–3027 (2004).
[CrossRef]

G.-R. Lin and C.-J. Lin, “Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate,” J. Appl. Phys.95(12), 8484–8486 (2004).
[CrossRef]

Y. Kurokawa, S. Tomita, S. Miyajima, A. Yamada, and M. Konagai, “Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice,” J. Appl. Phys.46(35), L833–L835 (2007).
[CrossRef]

F. Iacona, G. Franzo, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys.87(3), 1295–1303 (2000).
[CrossRef]

G. G. Qin, A. P. Li, B. R. Zhang, and B.-C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys.78(3), 2006–2009 (1995).
[CrossRef]

H.-Z. Song, X.-M. Bao, N.-S. Li, and J.-Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys.82(8), 4028–4032 (1997).
[CrossRef]

J. Lightwave Technol. (1)

J. Lumin. (1)

A. Rodriguez, J. Arenas, and J. C. Alonso, “Photoluminescence mechanisms in silicon quantum dots embedded in nanometric chlorinated-silicon nitride films,” J. Lumin.132(9), 2385–2389 (2012).
[CrossRef]

Nature (1)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Opt. Express (3)

Phys. Rev. B Condens. Matter (1)

Q. Ye, R. Tsu, and E. H. Nicollian, “Resonant tunneling via microcrystalline-silicon quantum confinement,” Phys. Rev. B Condens. Matter44(4), 1806–1811 (1991).
[CrossRef] [PubMed]

Phys. Rev. Lett. (1)

N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Solid-State Electron. (1)

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
[CrossRef]

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Figures (7)

Fig. 1
Fig. 1

The XPS analyses of Si-rich SiOx films grown at RF plasma powers of 60 W (upper) and 70 W (lower).

Fig. 2
Fig. 2

The HRTEM bright-field image and the HRTEM micrographs (inset) with their corresponding size distributions for 350-nm-thick Si-rich SiO1.45 (Lower) and SiO1.62 (Upper) samples with buried Si-QDs.

Fig. 3
Fig. 3

The HRTEM bright-field image and the HRTEM micrographs (inset) with their corresponding size distributions for 150-nm-thick Si-rich SiO1.62 sample with buried Si-QDs.

Fig. 4
Fig. 4

I-V curves of MOSLEDs with Si-rich SiO1.45 (Upper) and SiO1.62 (Lower) films.

Fig. 5
Fig. 5

P-I response on (a) log-log and (b) linear-linear scales of MOSLEDs with Si-rich SiO1.45 (Upper) and SiO1.62 (Lower) films.

Fig. 6
Fig. 6

EL spectra of 150 nm and 350 nm PECVD-grown Si-rich SiO1.45 and SiO1.62 based MOSLEDs.

Fig. 7
Fig. 7

Blue-shift of EL Peak wavelength of Si-QDs based MOSLEDs with different RF plasma power and PECVD deposition time.

Tables (1)

Tables Icon

Table 1 The Corresponding Parameters of F-N Tunneling for the MOSLEDs Made by Si-QD Embedded Si-rich SiOx Grown with Different RF Plasma Power

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

η ext = t 0 t 1 P(t) I(t) e hν dt= P opt I bias ( 1.24 /λ ) ,
J FN = q 3 ( m 0 / m e * ) 8πh ϕ B E ox 2 e ( 8π 2 m e * ϕ B 3 3qh ) E ox =A E ox 2 e B E ox ϕ B = C 1 A B 2 m e * / m 0 = C 2 C 1 1 A 3 B 2 ,
T e =16exp{d 8m*ΔE 2 },

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