Abstract

Selective area growth technique is very promising for the realization of optoelectronic nano-devices based on InGaN/GaN quantum disks, as it allows precise positioning of the nano-objects on the substrate. However, this fabrication method induces a pronounced pyramidal shape of the nano-columnar heterostructures. To understand how the optical properties of these heterostructures are affected by this shape, we investigated the linear polarization of the luminescence from 0-dimensional localization centers included in their active layer. Our experimental results and our simulation show that a complex strain distribution exist in the active layer and also that quantum dot-like objects can be used to probe the local strain distribution through nano-scale heterostructures.

© 2012 OSA

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  1. S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story (Springer-Verlag, Heidelberg, 2000).
  2. T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater.6(12), 951–956 (2007).
    [CrossRef] [PubMed]
  3. Y.-L. Li, Y.-R. Huang, and Y.-H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett.91(18), 181113 (2007).
    [CrossRef]
  4. A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, “Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs,” Semiconductors40(5), 605–610 (2006).
    [CrossRef]
  5. M. Funato, M. Ueda, D. Inoue, Y. Kawakami, Y. Narukawa, and T. Mukai, “Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells,” Appl. Phys. Express3(7), 071001–071004 (2010).
    [CrossRef]
  6. R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001–024015 (2012).
    [CrossRef]
  7. D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A30(4), 041513–041521 (2012).
    [CrossRef]
  8. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
    [CrossRef] [PubMed]
  9. R. A. Arif, Y.-K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett.91(9), 091110–091113 (2007).
    [CrossRef]
  10. J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantumwells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
    [CrossRef]
  11. P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
    [CrossRef]
  12. K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, “InGaN/GaN Nanocolumn LEDs Emitting from Blue to Red,” Proc. SPIE6473, 64730T (2007).
    [CrossRef]
  13. S. Ishizawa, K. Kishino, R. Araki, A. Kikuchi, and S. Sugimoto, “Optically pumped green (530-560 nm) stimulated emissions from InGaN/GaN multiple-quantum-well triangular-lattice nanocolumn arrays,” Appl. Phys. Express4(5), 055001–055004 (2011).
    [CrossRef]
  14. M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, “Growth of self-organized GaN nanostructures on Al2O3(0001) by RF-radical source molecular beam epitaxy,” Jpn. J. Appl. Phys.36(Part 2, No. 4B), L459–L462 (1997).
    [CrossRef]
  15. Y. Inose, M. Sakai, K. Ema, A. Kikuchi, K. Kishino, and T. Ohtsuki, “Light localization characteristics in a random configuration of dielectric cylindrical columns,” Phys. Rev. B82(20), 205328 (2010).
    [CrossRef]
  16. H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett.96(23), 231104 (2010).
    [CrossRef]
  17. A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys.43(No. 12A), L1524–L1526 (2004).
    [CrossRef]
  18. K. Kishino, H. Sekiguchi, and A. Kikuchi, “Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays,” J. Cryst. Growth311(7), 2063–2068 (2009).
    [CrossRef]
  19. R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi, and K. Kishino, “Positive binding energy of a biexciton confined in a localization centre formed in a single InxGa1−xN/GaN quantum disk,” Phys. Rev. B79(15), 155307 (2009).
    [CrossRef]
  20. J.- Shi, S. Zhang, M. Yang, S.- Zhu, and M. Zhang, “Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells,” Acta Mater.59(7), 2773–2782 (2011).
    [CrossRef]
  21. R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, “Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory,” Phys. Rev. B77(23), 235315 (2008).
    [CrossRef]
  22. M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, and F. Scholz, “Polarized light emission from semipolar GaInN quantum wells on {1-101} GaN facets,” J. Appl. Phys.101(5), 053530–053536 (2007).
    [CrossRef]
  23. D. Simeonov, E. Feltin, F. Demangeot, C. Pinquier, J.-F. Carlin, R. Butté, J. Frandon, and N. Grandjean, “Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy,” J. Cryst. Growth299(2), 254–258 (2007).
    [CrossRef]
  24. M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
    [CrossRef] [PubMed]
  25. M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai, “Polarization switching phenomena in semipolar InxGa1−xN/GaN quantum well active layers,” Phys. Rev. B78(23), 233303 (2008).
    [CrossRef]

2012 (3)

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001–024015 (2012).
[CrossRef]

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A30(4), 041513–041521 (2012).
[CrossRef]

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

2011 (4)

S. Ishizawa, K. Kishino, R. Araki, A. Kikuchi, and S. Sugimoto, “Optically pumped green (530-560 nm) stimulated emissions from InGaN/GaN multiple-quantum-well triangular-lattice nanocolumn arrays,” Appl. Phys. Express4(5), 055001–055004 (2011).
[CrossRef]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantumwells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

J.- Shi, S. Zhang, M. Yang, S.- Zhu, and M. Zhang, “Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells,” Acta Mater.59(7), 2773–2782 (2011).
[CrossRef]

2010 (3)

M. Funato, M. Ueda, D. Inoue, Y. Kawakami, Y. Narukawa, and T. Mukai, “Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells,” Appl. Phys. Express3(7), 071001–071004 (2010).
[CrossRef]

Y. Inose, M. Sakai, K. Ema, A. Kikuchi, K. Kishino, and T. Ohtsuki, “Light localization characteristics in a random configuration of dielectric cylindrical columns,” Phys. Rev. B82(20), 205328 (2010).
[CrossRef]

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett.96(23), 231104 (2010).
[CrossRef]

2009 (2)

K. Kishino, H. Sekiguchi, and A. Kikuchi, “Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays,” J. Cryst. Growth311(7), 2063–2068 (2009).
[CrossRef]

R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi, and K. Kishino, “Positive binding energy of a biexciton confined in a localization centre formed in a single InxGa1−xN/GaN quantum disk,” Phys. Rev. B79(15), 155307 (2009).
[CrossRef]

2008 (2)

R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, “Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory,” Phys. Rev. B77(23), 235315 (2008).
[CrossRef]

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai, “Polarization switching phenomena in semipolar InxGa1−xN/GaN quantum well active layers,” Phys. Rev. B78(23), 233303 (2008).
[CrossRef]

2007 (6)

M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, and F. Scholz, “Polarized light emission from semipolar GaInN quantum wells on {1-101} GaN facets,” J. Appl. Phys.101(5), 053530–053536 (2007).
[CrossRef]

D. Simeonov, E. Feltin, F. Demangeot, C. Pinquier, J.-F. Carlin, R. Butté, J. Frandon, and N. Grandjean, “Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy,” J. Cryst. Growth299(2), 254–258 (2007).
[CrossRef]

K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, “InGaN/GaN Nanocolumn LEDs Emitting from Blue to Red,” Proc. SPIE6473, 64730T (2007).
[CrossRef]

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater.6(12), 951–956 (2007).
[CrossRef] [PubMed]

Y.-L. Li, Y.-R. Huang, and Y.-H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett.91(18), 181113 (2007).
[CrossRef]

R. A. Arif, Y.-K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett.91(9), 091110–091113 (2007).
[CrossRef]

2006 (1)

A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, “Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs,” Semiconductors40(5), 605–610 (2006).
[CrossRef]

2005 (1)

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

2004 (1)

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys.43(No. 12A), L1524–L1526 (2004).
[CrossRef]

1997 (1)

M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, “Growth of self-organized GaN nanostructures on Al2O3(0001) by RF-radical source molecular beam epitaxy,” Jpn. J. Appl. Phys.36(Part 2, No. 4B), L459–L462 (1997).
[CrossRef]

Aloni, S.

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater.6(12), 951–956 (2007).
[CrossRef] [PubMed]

Araki, R.

S. Ishizawa, K. Kishino, R. Araki, A. Kikuchi, and S. Sugimoto, “Optically pumped green (530-560 nm) stimulated emissions from InGaN/GaN multiple-quantum-well triangular-lattice nanocolumn arrays,” Appl. Phys. Express4(5), 055001–055004 (2011).
[CrossRef]

Arif, R. A.

R. A. Arif, Y.-K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett.91(9), 091110–091113 (2007).
[CrossRef]

Baier, M. H.

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

Bardoux, R.

R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi, and K. Kishino, “Positive binding energy of a biexciton confined in a localization centre formed in a single InxGa1−xN/GaN quantum disk,” Phys. Rev. B79(15), 155307 (2009).
[CrossRef]

R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, “Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory,” Phys. Rev. B77(23), 235315 (2008).
[CrossRef]

Bochkareva, N. I.

A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, “Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs,” Semiconductors40(5), 605–610 (2006).
[CrossRef]

Bretagnon, T.

R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, “Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory,” Phys. Rev. B77(23), 235315 (2008).
[CrossRef]

Browne, D. A.

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A30(4), 041513–041521 (2012).
[CrossRef]

Brückner, P.

M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, and F. Scholz, “Polarized light emission from semipolar GaInN quantum wells on {1-101} GaN facets,” J. Appl. Phys.101(5), 053530–053536 (2007).
[CrossRef]

Butté, R.

D. Simeonov, E. Feltin, F. Demangeot, C. Pinquier, J.-F. Carlin, R. Butté, J. Frandon, and N. Grandjean, “Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy,” J. Cryst. Growth299(2), 254–258 (2007).
[CrossRef]

Carlin, J.-F.

D. Simeonov, E. Feltin, F. Demangeot, C. Pinquier, J.-F. Carlin, R. Butté, J. Frandon, and N. Grandjean, “Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy,” J. Cryst. Growth299(2), 254–258 (2007).
[CrossRef]

Collin, S.

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

Crottini, A.

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

Demangeot, F.

D. Simeonov, E. Feltin, F. Demangeot, C. Pinquier, J.-F. Carlin, R. Butté, J. Frandon, and N. Grandjean, “Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy,” J. Cryst. Growth299(2), 254–258 (2007).
[CrossRef]

DenBaars, S. P.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001–024015 (2012).
[CrossRef]

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

Deveaud, B.

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

Dierolf, V.

Ee, Y.-K.

R. A. Arif, Y.-K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett.91(9), 091110–091113 (2007).
[CrossRef]

Efremov, A. A.

A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, “Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs,” Semiconductors40(5), 605–610 (2006).
[CrossRef]

Ema, K.

Y. Inose, M. Sakai, K. Ema, A. Kikuchi, K. Kishino, and T. Ohtsuki, “Light localization characteristics in a random configuration of dielectric cylindrical columns,” Phys. Rev. B82(20), 205328 (2010).
[CrossRef]

Farrell, R. M.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001–024015 (2012).
[CrossRef]

Feezell, D. F.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

Feltin, E.

D. Simeonov, E. Feltin, F. Demangeot, C. Pinquier, J.-F. Carlin, R. Butté, J. Frandon, and N. Grandjean, “Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy,” J. Cryst. Growth299(2), 254–258 (2007).
[CrossRef]

Feneberg, M.

M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, and F. Scholz, “Polarized light emission from semipolar GaInN quantum wells on {1-101} GaN facets,” J. Appl. Phys.101(5), 053530–053536 (2007).
[CrossRef]

Frandon, J.

D. Simeonov, E. Feltin, F. Demangeot, C. Pinquier, J.-F. Carlin, R. Butté, J. Frandon, and N. Grandjean, “Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy,” J. Cryst. Growth299(2), 254–258 (2007).
[CrossRef]

Fujita, N.

M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, “Growth of self-organized GaN nanostructures on Al2O3(0001) by RF-radical source molecular beam epitaxy,” Jpn. J. Appl. Phys.36(Part 2, No. 4B), L459–L462 (1997).
[CrossRef]

Fujito, K.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

Funato, M.

M. Funato, M. Ueda, D. Inoue, Y. Kawakami, Y. Narukawa, and T. Mukai, “Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells,” Appl. Phys. Express3(7), 071001–071004 (2010).
[CrossRef]

R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi, and K. Kishino, “Positive binding energy of a biexciton confined in a localization centre formed in a single InxGa1−xN/GaN quantum disk,” Phys. Rev. B79(15), 155307 (2009).
[CrossRef]

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai, “Polarization switching phenomena in semipolar InxGa1−xN/GaN quantum well active layers,” Phys. Rev. B78(23), 233303 (2008).
[CrossRef]

Ganière, J. D.

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

Gil, B.

R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, “Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory,” Phys. Rev. B77(23), 235315 (2008).
[CrossRef]

Gorbunov, R. I.

A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, “Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs,” Semiconductors40(5), 605–610 (2006).
[CrossRef]

Grandjean, N.

D. Simeonov, E. Feltin, F. Demangeot, C. Pinquier, J.-F. Carlin, R. Butté, J. Frandon, and N. Grandjean, “Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy,” J. Cryst. Growth299(2), 254–258 (2007).
[CrossRef]

Guillet, T.

R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, “Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory,” Phys. Rev. B77(23), 235315 (2008).
[CrossRef]

Hardy, M. T.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

Hsu, P. S.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

Huang, Y.-R.

Y.-L. Li, Y.-R. Huang, and Y.-H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett.91(18), 181113 (2007).
[CrossRef]

Hurni, C. A.

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A30(4), 041513–041521 (2012).
[CrossRef]

Inose, Y.

Y. Inose, M. Sakai, K. Ema, A. Kikuchi, K. Kishino, and T. Ohtsuki, “Light localization characteristics in a random configuration of dielectric cylindrical columns,” Phys. Rev. B82(20), 205328 (2010).
[CrossRef]

Inoue, D.

M. Funato, M. Ueda, D. Inoue, Y. Kawakami, Y. Narukawa, and T. Mukai, “Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells,” Appl. Phys. Express3(7), 071001–071004 (2010).
[CrossRef]

Ishizawa, S.

S. Ishizawa, K. Kishino, R. Araki, A. Kikuchi, and S. Sugimoto, “Optically pumped green (530-560 nm) stimulated emissions from InGaN/GaN multiple-quantum-well triangular-lattice nanocolumn arrays,” Appl. Phys. Express4(5), 055001–055004 (2011).
[CrossRef]

K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, “InGaN/GaN Nanocolumn LEDs Emitting from Blue to Red,” Proc. SPIE6473, 64730T (2007).
[CrossRef]

Kaneta, A.

R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi, and K. Kishino, “Positive binding energy of a biexciton confined in a localization centre formed in a single InxGa1−xN/GaN quantum disk,” Phys. Rev. B79(15), 155307 (2009).
[CrossRef]

Kapon, E.

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

Kawai, M.

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys.43(No. 12A), L1524–L1526 (2004).
[CrossRef]

Kawakami, Y.

M. Funato, M. Ueda, D. Inoue, Y. Kawakami, Y. Narukawa, and T. Mukai, “Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells,” Appl. Phys. Express3(7), 071001–071004 (2010).
[CrossRef]

R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi, and K. Kishino, “Positive binding energy of a biexciton confined in a localization centre formed in a single InxGa1−xN/GaN quantum disk,” Phys. Rev. B79(15), 155307 (2009).
[CrossRef]

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai, “Polarization switching phenomena in semipolar InxGa1−xN/GaN quantum well active layers,” Phys. Rev. B78(23), 233303 (2008).
[CrossRef]

Kikuchi, A.

S. Ishizawa, K. Kishino, R. Araki, A. Kikuchi, and S. Sugimoto, “Optically pumped green (530-560 nm) stimulated emissions from InGaN/GaN multiple-quantum-well triangular-lattice nanocolumn arrays,” Appl. Phys. Express4(5), 055001–055004 (2011).
[CrossRef]

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett.96(23), 231104 (2010).
[CrossRef]

Y. Inose, M. Sakai, K. Ema, A. Kikuchi, K. Kishino, and T. Ohtsuki, “Light localization characteristics in a random configuration of dielectric cylindrical columns,” Phys. Rev. B82(20), 205328 (2010).
[CrossRef]

K. Kishino, H. Sekiguchi, and A. Kikuchi, “Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays,” J. Cryst. Growth311(7), 2063–2068 (2009).
[CrossRef]

R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi, and K. Kishino, “Positive binding energy of a biexciton confined in a localization centre formed in a single InxGa1−xN/GaN quantum disk,” Phys. Rev. B79(15), 155307 (2009).
[CrossRef]

K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, “InGaN/GaN Nanocolumn LEDs Emitting from Blue to Red,” Proc. SPIE6473, 64730T (2007).
[CrossRef]

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys.43(No. 12A), L1524–L1526 (2004).
[CrossRef]

M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, “Growth of self-organized GaN nanostructures on Al2O3(0001) by RF-radical source molecular beam epitaxy,” Jpn. J. Appl. Phys.36(Part 2, No. 4B), L459–L462 (1997).
[CrossRef]

Kishino, K.

S. Ishizawa, K. Kishino, R. Araki, A. Kikuchi, and S. Sugimoto, “Optically pumped green (530-560 nm) stimulated emissions from InGaN/GaN multiple-quantum-well triangular-lattice nanocolumn arrays,” Appl. Phys. Express4(5), 055001–055004 (2011).
[CrossRef]

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett.96(23), 231104 (2010).
[CrossRef]

Y. Inose, M. Sakai, K. Ema, A. Kikuchi, K. Kishino, and T. Ohtsuki, “Light localization characteristics in a random configuration of dielectric cylindrical columns,” Phys. Rev. B82(20), 205328 (2010).
[CrossRef]

K. Kishino, H. Sekiguchi, and A. Kikuchi, “Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays,” J. Cryst. Growth311(7), 2063–2068 (2009).
[CrossRef]

R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi, and K. Kishino, “Positive binding energy of a biexciton confined in a localization centre formed in a single InxGa1−xN/GaN quantum disk,” Phys. Rev. B79(15), 155307 (2009).
[CrossRef]

K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, “InGaN/GaN Nanocolumn LEDs Emitting from Blue to Red,” Proc. SPIE6473, 64730T (2007).
[CrossRef]

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys.43(No. 12A), L1524–L1526 (2004).
[CrossRef]

M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, “Growth of self-organized GaN nanostructures on Al2O3(0001) by RF-radical source molecular beam epitaxy,” Jpn. J. Appl. Phys.36(Part 2, No. 4B), L459–L462 (1997).
[CrossRef]

Kojima, K.

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai, “Polarization switching phenomena in semipolar InxGa1−xN/GaN quantum well active layers,” Phys. Rev. B78(23), 233303 (2008).
[CrossRef]

Koslow, I.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

Kuykendall, T.

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater.6(12), 951–956 (2007).
[CrossRef] [PubMed]

Lai, Y.-H.

Y.-L. Li, Y.-R. Huang, and Y.-H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett.91(18), 181113 (2007).
[CrossRef]

Lang, J. R.

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A30(4), 041513–041521 (2012).
[CrossRef]

Lavrinovich, D. A.

A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, “Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs,” Semiconductors40(5), 605–610 (2006).
[CrossRef]

Lefebvre, P.

R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, “Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory,” Phys. Rev. B77(23), 235315 (2008).
[CrossRef]

Li, Y.-L.

Y.-L. Li, Y.-R. Huang, and Y.-H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett.91(18), 181113 (2007).
[CrossRef]

Lipski, F.

M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, and F. Scholz, “Polarized light emission from semipolar GaInN quantum wells on {1-101} GaN facets,” J. Appl. Phys.101(5), 053530–053536 (2007).
[CrossRef]

Liu, G.

Malko, A.

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

Merano, M.

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

Mori, M.

M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, “Growth of self-organized GaN nanostructures on Al2O3(0001) by RF-radical source molecular beam epitaxy,” Jpn. J. Appl. Phys.36(Part 2, No. 4B), L459–L462 (1997).
[CrossRef]

Mukai, T.

M. Funato, M. Ueda, D. Inoue, Y. Kawakami, Y. Narukawa, and T. Mukai, “Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells,” Appl. Phys. Express3(7), 071001–071004 (2010).
[CrossRef]

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai, “Polarization switching phenomena in semipolar InxGa1−xN/GaN quantum well active layers,” Phys. Rev. B78(23), 233303 (2008).
[CrossRef]

Nakamura, S.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

Narukawa, Y.

M. Funato, M. Ueda, D. Inoue, Y. Kawakami, Y. Narukawa, and T. Mukai, “Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells,” Appl. Phys. Express3(7), 071001–071004 (2010).
[CrossRef]

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai, “Polarization switching phenomena in semipolar InxGa1−xN/GaN quantum well active layers,” Phys. Rev. B78(23), 233303 (2008).
[CrossRef]

Neubert, B.

M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, and F. Scholz, “Polarized light emission from semipolar GaInN quantum wells on {1-101} GaN facets,” J. Appl. Phys.101(5), 053530–053536 (2007).
[CrossRef]

Ohtsuki, T.

Y. Inose, M. Sakai, K. Ema, A. Kikuchi, K. Kishino, and T. Ohtsuki, “Light localization characteristics in a random configuration of dielectric cylindrical columns,” Phys. Rev. B82(20), 205328 (2010).
[CrossRef]

Pelucchi, E.

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

Pinquier, C.

D. Simeonov, E. Feltin, F. Demangeot, C. Pinquier, J.-F. Carlin, R. Butté, J. Frandon, and N. Grandjean, “Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy,” J. Cryst. Growth299(2), 254–258 (2007).
[CrossRef]

Poplawsky, J. D.

Rebane, Yu. T.

A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, “Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs,” Semiconductors40(5), 605–610 (2006).
[CrossRef]

Renucci, P.

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

Romanov, A. E.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

Rousset, S.

R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, “Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory,” Phys. Rev. B77(23), 235315 (2008).
[CrossRef]

Sakai, M.

Y. Inose, M. Sakai, K. Ema, A. Kikuchi, K. Kishino, and T. Ohtsuki, “Light localization characteristics in a random configuration of dielectric cylindrical columns,” Phys. Rev. B82(20), 205328 (2010).
[CrossRef]

Sauer, R.

M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, and F. Scholz, “Polarized light emission from semipolar GaInN quantum wells on {1-101} GaN facets,” J. Appl. Phys.101(5), 053530–053536 (2007).
[CrossRef]

Scholz, F.

M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, and F. Scholz, “Polarized light emission from semipolar GaInN quantum wells on {1-101} GaN facets,” J. Appl. Phys.101(5), 053530–053536 (2007).
[CrossRef]

Sekiguchi, H.

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett.96(23), 231104 (2010).
[CrossRef]

K. Kishino, H. Sekiguchi, and A. Kikuchi, “Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays,” J. Cryst. Growth311(7), 2063–2068 (2009).
[CrossRef]

K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, “InGaN/GaN Nanocolumn LEDs Emitting from Blue to Red,” Proc. SPIE6473, 64730T (2007).
[CrossRef]

Semond, F.

R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, “Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory,” Phys. Rev. B77(23), 235315 (2008).
[CrossRef]

Shi, J.-

J.- Shi, S. Zhang, M. Yang, S.- Zhu, and M. Zhang, “Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells,” Acta Mater.59(7), 2773–2782 (2011).
[CrossRef]

Shreter, Yu. G.

A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, “Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs,” Semiconductors40(5), 605–610 (2006).
[CrossRef]

Simeonov, D.

D. Simeonov, E. Feltin, F. Demangeot, C. Pinquier, J.-F. Carlin, R. Butté, J. Frandon, and N. Grandjean, “Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy,” J. Cryst. Growth299(2), 254–258 (2007).
[CrossRef]

Sonderegger, S.

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

Speck, J. S.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001–024015 (2012).
[CrossRef]

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A30(4), 041513–041521 (2012).
[CrossRef]

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

Sugimoto, S.

S. Ishizawa, K. Kishino, R. Araki, A. Kikuchi, and S. Sugimoto, “Optically pumped green (530-560 nm) stimulated emissions from InGaN/GaN multiple-quantum-well triangular-lattice nanocolumn arrays,” Appl. Phys. Express4(5), 055001–055004 (2011).
[CrossRef]

Tada, M.

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys.43(No. 12A), L1524–L1526 (2004).
[CrossRef]

Taliercio, T.

R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, “Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory,” Phys. Rev. B77(23), 235315 (2008).
[CrossRef]

Tansu, N.

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantumwells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

R. A. Arif, Y.-K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett.91(9), 091110–091113 (2007).
[CrossRef]

Tarkhin, D. V.

A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, “Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs,” Semiconductors40(5), 605–610 (2006).
[CrossRef]

Thonke, K.

M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, and F. Scholz, “Polarized light emission from semipolar GaInN quantum wells on {1-101} GaN facets,” J. Appl. Phys.101(5), 053530–053536 (2007).
[CrossRef]

Ueda, M.

M. Funato, M. Ueda, D. Inoue, Y. Kawakami, Y. Narukawa, and T. Mukai, “Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells,” Appl. Phys. Express3(7), 071001–071004 (2010).
[CrossRef]

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai, “Polarization switching phenomena in semipolar InxGa1−xN/GaN quantum well active layers,” Phys. Rev. B78(23), 233303 (2008).
[CrossRef]

Ulrich, P.

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater.6(12), 951–956 (2007).
[CrossRef] [PubMed]

Wu, F.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001–024015 (2012).
[CrossRef]

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

Wunderer, T.

M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, and F. Scholz, “Polarized light emission from semipolar GaInN quantum wells on {1-101} GaN facets,” J. Appl. Phys.101(5), 053530–053536 (2007).
[CrossRef]

Yang, M.

J.- Shi, S. Zhang, M. Yang, S.- Zhu, and M. Zhang, “Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells,” Acta Mater.59(7), 2773–2782 (2011).
[CrossRef]

Yang, P.

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater.6(12), 951–956 (2007).
[CrossRef] [PubMed]

Yoshizawa, M.

M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, “Growth of self-organized GaN nanostructures on Al2O3(0001) by RF-radical source molecular beam epitaxy,” Jpn. J. Appl. Phys.36(Part 2, No. 4B), L459–L462 (1997).
[CrossRef]

Young, E. C.

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A30(4), 041513–041521 (2012).
[CrossRef]

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001–024015 (2012).
[CrossRef]

Zhang, J.

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantumwells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

Zhang, M.

J.- Shi, S. Zhang, M. Yang, S.- Zhu, and M. Zhang, “Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells,” Acta Mater.59(7), 2773–2782 (2011).
[CrossRef]

Zhang, S.

J.- Shi, S. Zhang, M. Yang, S.- Zhu, and M. Zhang, “Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells,” Acta Mater.59(7), 2773–2782 (2011).
[CrossRef]

Zhao, H.

Zhu, S.-

J.- Shi, S. Zhang, M. Yang, S.- Zhu, and M. Zhang, “Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells,” Acta Mater.59(7), 2773–2782 (2011).
[CrossRef]

Acta Mater. (1)

J.- Shi, S. Zhang, M. Yang, S.- Zhu, and M. Zhang, “Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells,” Acta Mater.59(7), 2773–2782 (2011).
[CrossRef]

Appl. Phys. Express (2)

M. Funato, M. Ueda, D. Inoue, Y. Kawakami, Y. Narukawa, and T. Mukai, “Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells,” Appl. Phys. Express3(7), 071001–071004 (2010).
[CrossRef]

S. Ishizawa, K. Kishino, R. Araki, A. Kikuchi, and S. Sugimoto, “Optically pumped green (530-560 nm) stimulated emissions from InGaN/GaN multiple-quantum-well triangular-lattice nanocolumn arrays,” Appl. Phys. Express4(5), 055001–055004 (2011).
[CrossRef]

Appl. Phys. Lett. (4)

H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett.96(23), 231104 (2010).
[CrossRef]

R. A. Arif, Y.-K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett.91(9), 091110–091113 (2007).
[CrossRef]

P. S. Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104–021108 (2012).
[CrossRef]

Y.-L. Li, Y.-R. Huang, and Y.-H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett.91(18), 181113 (2007).
[CrossRef]

J. Appl. Phys. (2)

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantumwells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

M. Feneberg, F. Lipski, R. Sauer, K. Thonke, P. Brückner, B. Neubert, T. Wunderer, and F. Scholz, “Polarized light emission from semipolar GaInN quantum wells on {1-101} GaN facets,” J. Appl. Phys.101(5), 053530–053536 (2007).
[CrossRef]

J. Cryst. Growth (2)

D. Simeonov, E. Feltin, F. Demangeot, C. Pinquier, J.-F. Carlin, R. Butté, J. Frandon, and N. Grandjean, “Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy,” J. Cryst. Growth299(2), 254–258 (2007).
[CrossRef]

K. Kishino, H. Sekiguchi, and A. Kikuchi, “Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays,” J. Cryst. Growth311(7), 2063–2068 (2009).
[CrossRef]

J. Vac. Sci. Technol. A (1)

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A30(4), 041513–041521 (2012).
[CrossRef]

Jpn. J. Appl. Phys. (2)

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys.43(No. 12A), L1524–L1526 (2004).
[CrossRef]

M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, “Growth of self-organized GaN nanostructures on Al2O3(0001) by RF-radical source molecular beam epitaxy,” Jpn. J. Appl. Phys.36(Part 2, No. 4B), L459–L462 (1997).
[CrossRef]

Nat. Mater. (1)

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater.6(12), 951–956 (2007).
[CrossRef] [PubMed]

Nature (1)

M. Merano, S. Sonderegger, A. Crottini, S. Collin, P. Renucci, E. Pelucchi, A. Malko, M. H. Baier, E. Kapon, B. Deveaud, and J. D. Ganière, “Probing carrier dynamics in nanostructures by picosecond cathodoluminescence,” Nature438(7067), 479–482 (2005).
[CrossRef] [PubMed]

Opt. Express (1)

Phys. Rev. B (4)

Y. Inose, M. Sakai, K. Ema, A. Kikuchi, K. Kishino, and T. Ohtsuki, “Light localization characteristics in a random configuration of dielectric cylindrical columns,” Phys. Rev. B82(20), 205328 (2010).
[CrossRef]

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai, “Polarization switching phenomena in semipolar InxGa1−xN/GaN quantum well active layers,” Phys. Rev. B78(23), 233303 (2008).
[CrossRef]

R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi, and K. Kishino, “Positive binding energy of a biexciton confined in a localization centre formed in a single InxGa1−xN/GaN quantum disk,” Phys. Rev. B79(15), 155307 (2009).
[CrossRef]

R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, “Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory,” Phys. Rev. B77(23), 235315 (2008).
[CrossRef]

Proc. SPIE (1)

K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, “InGaN/GaN Nanocolumn LEDs Emitting from Blue to Red,” Proc. SPIE6473, 64730T (2007).
[CrossRef]

Semicond. Sci. Technol. (1)

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001–024015 (2012).
[CrossRef]

Semiconductors (1)

A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, “Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs,” Semiconductors40(5), 605–610 (2006).
[CrossRef]

Other (1)

S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story (Springer-Verlag, Heidelberg, 2000).

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Figures (3)

Fig. 1
Fig. 1

(a) Schematic representation of an individual NFQ-disk. (b) µPL spectra of an individual Q-disk1 obtained for three different excitation power densities. (b) Bird’s eye view of the sample by scanning electron microscope. (c) Image of the sample acquired by luminescence microscope.

Fig. 2
Fig. 2

(a) Simplified schematic view of the experimental setup use in polarization-resolved mPL measurement. (b) In black line, µPL spectrum of the NFQ-disk2; in red dash line sum of the Lorentz function fit plotted in green lines. (b) Spectra of the NFQ-disk2 acquired for two cross position of the linear polarizer. In the inset is plotted the variation of the integrated intensity of the peaks P1, P2, and P3 defined in (c). The orange hexagon represents the shape of the NFQ-disk.

Fig. 3
Fig. 3

(a) Principal strain distribution through the InGaN layer of a NFQ-disk. (b) Plot of the principal strain distribution extracted along the black dashed line in Fig. 3(a).

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