Abstract

Progress in processing low-loss quasi-phase-matched gallium arsenide crystals makes it possible to benefit from their excellent nonlinear properties in practical mid-infrared sources. This paper addresses both crystal growth aspects and the most recent device demonstrations.

© 2012 OSA

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  1. E. D. Palik, Handbook of Optical Constants of Solids (Academic Press, Orlando, 1985).
  2. L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett. 29(22), 1942–1944 (1993).
    [CrossRef]
  3. P. S. Kuo, K. L. Vodopyanov, M. M. Fejer, X. Yu, J. S. Harris, D. F. Bliss, and D. Weyburne, “GaAs optical parametric oscillator with circularly polarized and depolarized pump,” Opt. Lett. 32(18), 2735–2737 (2007).
    [CrossRef] [PubMed]
  4. C. Kieleck, M. Eichhorn, A. Hirth, D. Faye, and E. Lallier, “High-efficiency 20-50 kHz mid-infrared orientation-patterned GaAs optical parametric oscillator pumped by a 2 µm holmium laser,” Opt. Lett. 34(3), 262–264 (2009).
    [CrossRef] [PubMed]
  5. S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys. 37(Part 2, No. 12B), L1493–L1496 (1998).
    [CrossRef]
  6. C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth 201-202, 187–193 (1999).
    [CrossRef]
  7. E. Lallier and A. Grisard, “Quasi-phase matched nonlinear crystals,” in Encyclopedia of Optical Engineering (Marcel Dekker, 2002).
  8. E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth 222(3), 482–496 (2001).
    [CrossRef]
  9. A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C 9(7), 1651–1654 (2012).
  10. L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 79(7), 904–906 (2001).
    [CrossRef]
  11. K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett. 29(16), 1912–1914 (2004).
    [CrossRef] [PubMed]
  12. S. Vasilyev, S. Schiller, A. Nevsky, A. Grisard, D. Faye, E. Lallier, Z. Zhang, A. J. Boyland, J. K. Sahu, M. Ibsen, and W. A. Clarkson, “Broadly tunable single-frequency cw mid-infrared source with milliwatt-level output based on difference-frequency generation in orientation-patterned GaAs,” Opt. Lett. 33(13), 1413–1415 (2008).
    [CrossRef] [PubMed]
  13. L. A. Pomeranz, P. G. Schunemann, S. D. Setzler, C. Jones, and P. A. Budni, “Continuous-wave optical parametric oscillator based on orientation patterned gallium arsenide,” in CLEO: QELS-Fundamental Science, OSA Technical Digest (Optical Society of America, 2012), paper JTh1I.4.
  14. A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE 7836, 783606 (2010).
    [CrossRef]
  15. A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE 8187, 818715 (2011).
  16. G. Bloom, A. Grisard, E. Lallier, C. Larat, M. Carras, and X. Marcadet, “Optical parametric amplification of a distributed-feedback quantum-cascade laser in orientation-patterned GaAs,” Opt. Lett. 35(4), 505–507 (2010).
    [CrossRef] [PubMed]

2012 (1)

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C 9(7), 1651–1654 (2012).

2011 (1)

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE 8187, 818715 (2011).

2010 (2)

G. Bloom, A. Grisard, E. Lallier, C. Larat, M. Carras, and X. Marcadet, “Optical parametric amplification of a distributed-feedback quantum-cascade laser in orientation-patterned GaAs,” Opt. Lett. 35(4), 505–507 (2010).
[CrossRef] [PubMed]

A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE 7836, 783606 (2010).
[CrossRef]

2009 (1)

2008 (1)

2007 (1)

2004 (1)

2001 (2)

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 79(7), 904–906 (2001).
[CrossRef]

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth 222(3), 482–496 (2001).
[CrossRef]

1999 (1)

C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth 201-202, 187–193 (1999).
[CrossRef]

1998 (1)

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys. 37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

1993 (1)

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett. 29(22), 1942–1944 (1993).
[CrossRef]

Becouarn, L.

K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett. 29(16), 1912–1914 (2004).
[CrossRef] [PubMed]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 79(7), 904–906 (2001).
[CrossRef]

Bliss, D. F.

Bloom, G.

Boyland, A. J.

Byer, R. L.

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett. 29(22), 1942–1944 (1993).
[CrossRef]

Cadoret, R.

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth 222(3), 482–496 (2001).
[CrossRef]

Carras, M.

Castelluci, D.

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth 222(3), 482–496 (2001).
[CrossRef]

Clarkson, W. A.

Ebert, C. B.

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 79(7), 904–906 (2001).
[CrossRef]

C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth 201-202, 187–193 (1999).
[CrossRef]

Eckardt, R. C.

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett. 29(22), 1942–1944 (1993).
[CrossRef]

Eichhorn, M.

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE 8187, 818715 (2011).

C. Kieleck, M. Eichhorn, A. Hirth, D. Faye, and E. Lallier, “High-efficiency 20-50 kHz mid-infrared orientation-patterned GaAs optical parametric oscillator pumped by a 2 µm holmium laser,” Opt. Lett. 34(3), 262–264 (2009).
[CrossRef] [PubMed]

Eyres, L. A.

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 79(7), 904–906 (2001).
[CrossRef]

C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth 201-202, 187–193 (1999).
[CrossRef]

Faye, D.

Feigelson, R. S.

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett. 29(22), 1942–1944 (1993).
[CrossRef]

Fejer, M. M.

P. S. Kuo, K. L. Vodopyanov, M. M. Fejer, X. Yu, J. S. Harris, D. F. Bliss, and D. Weyburne, “GaAs optical parametric oscillator with circularly polarized and depolarized pump,” Opt. Lett. 32(18), 2735–2737 (2007).
[CrossRef] [PubMed]

K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett. 29(16), 1912–1914 (2004).
[CrossRef] [PubMed]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 79(7), 904–906 (2001).
[CrossRef]

C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth 201-202, 187–193 (1999).
[CrossRef]

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett. 29(22), 1942–1944 (1993).
[CrossRef]

Gerard, B.

K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett. 29(16), 1912–1914 (2004).
[CrossRef] [PubMed]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 79(7), 904–906 (2001).
[CrossRef]

Gérard, B.

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C 9(7), 1651–1654 (2012).

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE 8187, 818715 (2011).

A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE 7836, 783606 (2010).
[CrossRef]

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth 222(3), 482–496 (2001).
[CrossRef]

Gil-Lafon, E.

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth 222(3), 482–496 (2001).
[CrossRef]

Gordon, L. A.

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett. 29(22), 1942–1944 (1993).
[CrossRef]

Grisard, A.

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C 9(7), 1651–1654 (2012).

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE 8187, 818715 (2011).

A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE 7836, 783606 (2010).
[CrossRef]

G. Bloom, A. Grisard, E. Lallier, C. Larat, M. Carras, and X. Marcadet, “Optical parametric amplification of a distributed-feedback quantum-cascade laser in orientation-patterned GaAs,” Opt. Lett. 35(4), 505–507 (2010).
[CrossRef] [PubMed]

S. Vasilyev, S. Schiller, A. Nevsky, A. Grisard, D. Faye, E. Lallier, Z. Zhang, A. J. Boyland, J. K. Sahu, M. Ibsen, and W. A. Clarkson, “Broadly tunable single-frequency cw mid-infrared source with milliwatt-level output based on difference-frequency generation in orientation-patterned GaAs,” Opt. Lett. 33(13), 1413–1415 (2008).
[CrossRef] [PubMed]

Gutty, F.

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C 9(7), 1651–1654 (2012).

A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE 7836, 783606 (2010).
[CrossRef]

Harris, J. S.

P. S. Kuo, K. L. Vodopyanov, M. M. Fejer, X. Yu, J. S. Harris, D. F. Bliss, and D. Weyburne, “GaAs optical parametric oscillator with circularly polarized and depolarized pump,” Opt. Lett. 32(18), 2735–2737 (2007).
[CrossRef] [PubMed]

K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett. 29(16), 1912–1914 (2004).
[CrossRef] [PubMed]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 79(7), 904–906 (2001).
[CrossRef]

C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth 201-202, 187–193 (1999).
[CrossRef]

Hildenbrand, A.

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE 8187, 818715 (2011).

Hirth, A.

Ibsen, M.

Ichinose, H.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys. 37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Ishiwada, T.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys. 37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Ito, R.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys. 37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Iwamoto, C.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys. 37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Jimenez, J.

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C 9(7), 1651–1654 (2012).

Kieleck, C.

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE 8187, 818715 (2011).

C. Kieleck, M. Eichhorn, A. Hirth, D. Faye, and E. Lallier, “High-efficiency 20-50 kHz mid-infrared orientation-patterned GaAs optical parametric oscillator pumped by a 2 µm holmium laser,” Opt. Lett. 34(3), 262–264 (2009).
[CrossRef] [PubMed]

Koh, S.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys. 37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Kondo, T.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys. 37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Kuo, P. S.

Lallier, E.

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C 9(7), 1651–1654 (2012).

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE 8187, 818715 (2011).

A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE 7836, 783606 (2010).
[CrossRef]

G. Bloom, A. Grisard, E. Lallier, C. Larat, M. Carras, and X. Marcadet, “Optical parametric amplification of a distributed-feedback quantum-cascade laser in orientation-patterned GaAs,” Opt. Lett. 35(4), 505–507 (2010).
[CrossRef] [PubMed]

C. Kieleck, M. Eichhorn, A. Hirth, D. Faye, and E. Lallier, “High-efficiency 20-50 kHz mid-infrared orientation-patterned GaAs optical parametric oscillator pumped by a 2 µm holmium laser,” Opt. Lett. 34(3), 262–264 (2009).
[CrossRef] [PubMed]

S. Vasilyev, S. Schiller, A. Nevsky, A. Grisard, D. Faye, E. Lallier, Z. Zhang, A. J. Boyland, J. K. Sahu, M. Ibsen, and W. A. Clarkson, “Broadly tunable single-frequency cw mid-infrared source with milliwatt-level output based on difference-frequency generation in orientation-patterned GaAs,” Opt. Lett. 33(13), 1413–1415 (2008).
[CrossRef] [PubMed]

K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett. 29(16), 1912–1914 (2004).
[CrossRef] [PubMed]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 79(7), 904–906 (2001).
[CrossRef]

Larat, C.

Levi, O.

Marcadet, X.

Napierala, J.

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth 222(3), 482–496 (2001).
[CrossRef]

Nevsky, A.

Pimpinelli, A.

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth 222(3), 482–496 (2001).
[CrossRef]

Pinguet, T. J.

K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett. 29(16), 1912–1914 (2004).
[CrossRef] [PubMed]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 79(7), 904–906 (2001).
[CrossRef]

Route, R. R.

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett. 29(22), 1942–1944 (1993).
[CrossRef]

Sahu, J. K.

Schiller, S.

Shiraki, Y.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys. 37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Tourreau, P. J.

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 79(7), 904–906 (2001).
[CrossRef]

Usami, T.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys. 37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Vasilyev, S.

Vodopyanov, K. L.

Weyburne, D.

Woods, G. L.

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett. 29(22), 1942–1944 (1993).
[CrossRef]

Yaguchi, H.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys. 37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Yu, X.

Zhang, Z.

Appl. Phys. Lett. (1)

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 79(7), 904–906 (2001).
[CrossRef]

Electron. Lett. (1)

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett. 29(22), 1942–1944 (1993).
[CrossRef]

J. Cryst. Growth (2)

C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth 201-202, 187–193 (1999).
[CrossRef]

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth 222(3), 482–496 (2001).
[CrossRef]

Jpn. J. Appl. Phys. (1)

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys. 37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Opt. Lett. (5)

Phys. Status Solidi C (1)

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C 9(7), 1651–1654 (2012).

Proc. SPIE (2)

A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE 7836, 783606 (2010).
[CrossRef]

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE 8187, 818715 (2011).

Other (3)

L. A. Pomeranz, P. G. Schunemann, S. D. Setzler, C. Jones, and P. A. Budni, “Continuous-wave optical parametric oscillator based on orientation patterned gallium arsenide,” in CLEO: QELS-Fundamental Science, OSA Technical Digest (Optical Society of America, 2012), paper JTh1I.4.

E. Lallier and A. Grisard, “Quasi-phase matched nonlinear crystals,” in Encyclopedia of Optical Engineering (Marcel Dekker, 2002).

E. D. Palik, Handbook of Optical Constants of Solids (Academic Press, Orlando, 1985).

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Figures (7)

Fig. 1
Fig. 1

OP-GaAs tuning curves.

Fig. 2
Fig. 2

Template fabrication (light eventually propagates along [-110]).

Fig. 3
Fig. 3

Left: a 2 inches wafer after the HVPE growth. Right: side views of periodic orientation patterning after revelation by chemical etching (see text).

Fig. 4
Fig. 4

Panchromatic CL image showing growth interruptions (compared to previous figures, the template is on top).

Fig. 5
Fig. 5

Measured Π°| and calculated (solid curve) difference frequency generation output versus signal wavelength.

Fig. 6
Fig. 6

Left: compact fiber-laser pump OPO module. Right: power scaling of the mid-IR output from the OP-GaAs optical parametric oscillator.

Fig. 7
Fig. 7

Gain versus pump average power. Squares (Circles), experiment with a 41-mm-long (32-mm-long) crystal. Solid curves, theoretical fits with SNLO calculation; dotted curves, with non-depleted pump approximation.

Tables (1)

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Table 1 Comparison of Material Properties

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