Abstract

A white light emitting CaxSr1-xAl2O4:Tb3+;Eu3+ phosphor was synthesized by a combustion method using metal nitrates as precursors and urea as a fuel. The X-ray diffraction patterns from the samples showed phases associated with monoclinic structures of CaAl2O4 and SrAl2O4. White photoluminescence with the CIE coordinates (x = 0.343, y = 0.325) was observed when the phosphor was optically-excited at 227 nm using a monochromatized xenon lamp. The white photoluminescence was a result of the combination of blue and green line emissions from Tb3+, and red line emission from Eu3+. The structure and photoluminescence properties of this phosphor are reported.

© 2012 OSA

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  1. Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009).
    [CrossRef]
  2. J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004).
    [CrossRef]
  3. R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012).
    [CrossRef]
  4. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
    [CrossRef] [PubMed]
  5. C. Wetzel and T. Detchprohm, “Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency,” Opt. Express19(S4Suppl 4), A962–A971 (2011).
    [CrossRef] [PubMed]
  6. H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett.97(13), 131114 (2010).
    [CrossRef]
  7. J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
    [CrossRef]
  8. T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto, “Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface,” Adv. Mater., doi:.
    [CrossRef]
  9. J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010).
    [CrossRef]
  10. J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(17), 171111 (2011).
    [CrossRef]
  11. Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 251112 (2011).
    [CrossRef]
  12. E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
    [CrossRef]
  13. X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012).
    [CrossRef]
  14. H.-C. Kuo, C.-W. Hung, H.-C. Chen, K.-J. Chen, C.-H. Wang, C.-W. Sher, C.-C. Yeh, C.-C. Lin, C.-H. Chen, and Y.-J. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express19(S4Suppl 4), A930–A936 (2011).
    [CrossRef] [PubMed]
  15. C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009).
    [CrossRef]
  16. S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999).
    [CrossRef]
  17. D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012).
    [CrossRef] [PubMed]
  18. R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010).
    [CrossRef]
  19. D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012).
    [CrossRef] [PubMed]
  20. A. Potdevin, G. Chadeyron, D. Boyer, B. Caillier, and R. Mahiou, “Sol–gel based YAG:Tb3+ or Eu3+ phosphors for application in lighting sources,” J. Phys. D.38(17), 3251–3260 (2005).
    [CrossRef]
  21. P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008).
    [CrossRef]
  22. S. Fan, C. Yu, D. He, X. Wang, and L. Hu, “Tunable white light emission from γ-irradiated Ag/Eu co-doped phosphate glass phosphor,” Opt. Mater. Express2(6), 765–770 (2012).
    [CrossRef]

2012 (6)

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012).
[CrossRef]

D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012).
[CrossRef] [PubMed]

D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012).
[CrossRef] [PubMed]

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012).
[CrossRef]

S. Fan, C. Yu, D. He, X. Wang, and L. Hu, “Tunable white light emission from γ-irradiated Ag/Eu co-doped phosphate glass phosphor,” Opt. Mater. Express2(6), 765–770 (2012).
[CrossRef]

2011 (6)

H.-C. Kuo, C.-W. Hung, H.-C. Chen, K.-J. Chen, C.-H. Wang, C.-W. Sher, C.-C. Yeh, C.-C. Lin, C.-H. Chen, and Y.-J. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express19(S4Suppl 4), A930–A936 (2011).
[CrossRef] [PubMed]

C. Wetzel and T. Detchprohm, “Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency,” Opt. Express19(S4Suppl 4), A962–A971 (2011).
[CrossRef] [PubMed]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(17), 171111 (2011).
[CrossRef]

Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 251112 (2011).
[CrossRef]

2010 (3)

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010).
[CrossRef]

R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010).
[CrossRef]

H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett.97(13), 131114 (2010).
[CrossRef]

2009 (2)

Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009).
[CrossRef]

C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009).
[CrossRef]

2008 (1)

P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008).
[CrossRef]

2005 (1)

A. Potdevin, G. Chadeyron, D. Boyer, B. Caillier, and R. Mahiou, “Sol–gel based YAG:Tb3+ or Eu3+ phosphors for application in lighting sources,” J. Phys. D.38(17), 3251–3260 (2005).
[CrossRef]

2004 (1)

J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004).
[CrossRef]

1999 (1)

S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999).
[CrossRef]

Akasaka, T.

T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto, “Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface,” Adv. Mater., doi:.
[CrossRef]

Álvarez, E.

R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010).
[CrossRef]

Boyer, D.

A. Potdevin, G. Chadeyron, D. Boyer, B. Caillier, and R. Mahiou, “Sol–gel based YAG:Tb3+ or Eu3+ phosphors for application in lighting sources,” J. Phys. D.38(17), 3251–3260 (2005).
[CrossRef]

Caillier, B.

A. Potdevin, G. Chadeyron, D. Boyer, B. Caillier, and R. Mahiou, “Sol–gel based YAG:Tb3+ or Eu3+ phosphors for application in lighting sources,” J. Phys. D.38(17), 3251–3260 (2005).
[CrossRef]

Caldiño, U.

R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010).
[CrossRef]

Chadeyron, G.

A. Potdevin, G. Chadeyron, D. Boyer, B. Caillier, and R. Mahiou, “Sol–gel based YAG:Tb3+ or Eu3+ phosphors for application in lighting sources,” J. Phys. D.38(17), 3251–3260 (2005).
[CrossRef]

Chen, B.

X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012).
[CrossRef]

P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008).
[CrossRef]

Chen, C.-H.

Chen, H.-C.

Chen, K.-J.

Chen, R.

C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009).
[CrossRef]

Cheng, Y.-J.

Cheng, Z.

D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012).
[CrossRef] [PubMed]

D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012).
[CrossRef] [PubMed]

Choi, J. C.

J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004).
[CrossRef]

S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999).
[CrossRef]

Cui, Y.

X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012).
[CrossRef]

Dai, Y.

D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012).
[CrossRef] [PubMed]

Dal Negro, L.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

DenBaars, S. P.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012).
[CrossRef]

Detchprohm, T.

Di, W.

P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008).
[CrossRef]

Dierolf, V.

Falcony, C.

R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010).
[CrossRef]

Fan, S.

Farrell, R. M.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012).
[CrossRef]

Francesco Pecora, E.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Geng, D.

D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012).
[CrossRef] [PubMed]

Gotoh, H.

T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto, “Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface,” Adv. Mater., doi:.
[CrossRef]

He, D.

Hou, Z.

D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012).
[CrossRef] [PubMed]

Hu, L.

Hu, Y.

C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009).
[CrossRef]

Huang, Q.

X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012).
[CrossRef]

Huang, Y.

Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009).
[CrossRef]

Hung, C.-W.

Jeon, P. E.

J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004).
[CrossRef]

Jia, G.

Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009).
[CrossRef]

Ju, S. H.

S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999).
[CrossRef]

Kasu, M.

Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 251112 (2011).
[CrossRef]

Kim, G. C.

J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004).
[CrossRef]

Kim, J. S.

J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004).
[CrossRef]

Kim, S. G.

S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999).
[CrossRef]

Kim, T. W.

J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004).
[CrossRef]

S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999).
[CrossRef]

Kobayashi, Y.

T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto, “Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface,” Adv. Mater., doi:.
[CrossRef]

Kuo, H.-C.

Li, C.

D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012).
[CrossRef] [PubMed]

Li, G.

D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012).
[CrossRef] [PubMed]

Liao, F.

C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009).
[CrossRef]

Lin, C.-C.

Lin, J.

D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012).
[CrossRef] [PubMed]

D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012).
[CrossRef] [PubMed]

Liu, C.

C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009).
[CrossRef]

Liu, G.

Mahiou, R.

A. Potdevin, G. Chadeyron, D. Boyer, B. Caillier, and R. Mahiou, “Sol–gel based YAG:Tb3+ or Eu3+ phosphors for application in lighting sources,” J. Phys. D.38(17), 3251–3260 (2005).
[CrossRef]

Martínez-Martínez, R.

R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010).
[CrossRef]

Mho, S.-I.

S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999).
[CrossRef]

Moustakas, T. D.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Paiella, R.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Park, H. L.

J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004).
[CrossRef]

S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999).
[CrossRef]

Park, Y. H.

J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004).
[CrossRef]

Peng, C.

D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012).
[CrossRef] [PubMed]

Poplawsky, J. D.

Potdevin, A.

A. Potdevin, G. Chadeyron, D. Boyer, B. Caillier, and R. Mahiou, “Sol–gel based YAG:Tb3+ or Eu3+ phosphors for application in lighting sources,” J. Phys. D.38(17), 3251–3260 (2005).
[CrossRef]

Qian, G.

X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012).
[CrossRef]

Rao, X.

X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012).
[CrossRef]

Shang, M.

D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012).
[CrossRef] [PubMed]

Sher, C.-W.

Smith, D. J.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Song, Y.

Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009).
[CrossRef]

Speck, J. S.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012).
[CrossRef]

Speghini, A.

R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010).
[CrossRef]

Taniyasu, Y.

Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 251112 (2011).
[CrossRef]

Tansu, N.

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(17), 171111 (2011).
[CrossRef]

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett.97(13), 131114 (2010).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010).
[CrossRef]

Wang, C.-H.

Wang, D.

D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012).
[CrossRef] [PubMed]

Wang, W.

D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012).
[CrossRef] [PubMed]

Wang, X.

S. Fan, C. Yu, D. He, X. Wang, and L. Hu, “Tunable white light emission from γ-irradiated Ag/Eu co-doped phosphate glass phosphor,” Opt. Mater. Express2(6), 765–770 (2012).
[CrossRef]

P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008).
[CrossRef]

Wang, Y.

C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009).
[CrossRef]

Wetzel, C.

Wu, C.

X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012).
[CrossRef]

Wu, F.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012).
[CrossRef]

Yamamoto, H.

T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto, “Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface,” Adv. Mater., doi:.
[CrossRef]

Yang, M.

Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009).
[CrossRef]

Yang, P.

D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012).
[CrossRef] [PubMed]

Yang, X.

X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012).
[CrossRef]

Yang, Y.

X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012).
[CrossRef]

Yeh, C.-C.

Yin, J.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

You, H.

Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009).
[CrossRef]

Young, E. C.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012).
[CrossRef]

Yu, C.

Yu. Nikiforov, A.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Zhang, H.

Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009).
[CrossRef]

Zhang, J.

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(17), 171111 (2011).
[CrossRef]

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010).
[CrossRef]

Zhang, W.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Zhang, Y.

D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012).
[CrossRef] [PubMed]

P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008).
[CrossRef]

Zhao, H.

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(17), 171111 (2011).
[CrossRef]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett.97(13), 131114 (2010).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010).
[CrossRef]

P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008).
[CrossRef]

Zhou, L.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Zhu, H.

P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008).
[CrossRef]

Zhu, P.

P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008).
[CrossRef]

Zhu, Q.

P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008).
[CrossRef]

Adv. Mater. (1)

T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto, “Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface,” Adv. Mater., doi:.
[CrossRef]

Appl. Phys. Lett. (7)

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(17), 171111 (2011).
[CrossRef]

Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 251112 (2011).
[CrossRef]

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett.97(13), 131114 (2010).
[CrossRef]

Y. Song, G. Jia, M. Yang, Y. Huang, H. You, and H. Zhang, “Sr3Al2O5Cl2:Ce3+,Eu2+: a potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes,” Appl. Phys. Lett.94(9), 091902 (2009).
[CrossRef]

J. S. Kim, P. E. Jeon, Y. H. Park, J. C. Choi, H. L. Park, G. C. Kim, and T. W. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85(17), 3696–3698 (2004).
[CrossRef]

Dalton Trans. (1)

D. Geng, G. Li, M. Shang, C. Peng, Y. Zhang, Z. Cheng, and J. Lin, “Nanocrystalline CaYAlO4:Tb3+/Eu3+ as promising phosphors for full-color field emission displays,” Dalton Trans.41(10), 3078–3086 (2012).
[CrossRef] [PubMed]

J. Alloy. Comp. (1)

C. Liu, Y. Wang, Y. Hu, R. Chen, and F. Liao, “Adjusting luminescence properties of SrxCa1−xAl2O4:Eu2+, Dy3+ phosphors by Sr/Ca ratio,” J. Alloy. Comp.470(1-2), 473–476 (2009).
[CrossRef]

J. Appl. Phys. (1)

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

J. Colloid Interface Sci. (1)

D. Wang, P. Yang, Z. Cheng, W. Wang, Z. Hou, Y. Dai, C. Li, and J. Lin, “Patterning of Gd2(WO4)3:Ln3+ (Ln=Eu, Tb) luminescent films by microcontact printing route,” J. Colloid Interface Sci.365(1), 320–325 (2012).
[CrossRef] [PubMed]

J. Mater. Chem. (1)

X. Rao, Q. Huang, X. Yang, Y. Cui, Y. Yang, C. Wu, B. Chen, and G. Qian, “Color tunable and white light emitting Tb3+ and Eu3+ doped lanthanide metal–organic framework materials,” J. Mater. Chem.22(7), 3210–3214 (2012).
[CrossRef]

J. Mater. Res. (1)

R. Martínez-Martínez, E. Álvarez, A. Speghini, C. Falcony, and U. Caldiño, “Cold white light generation from hafnium oxide films activated with Ce3+, Tb3+, and Mn2+ ions,” J. Mater. Res.25(03), 484–490 (2010).
[CrossRef]

J. Phys. D. (1)

A. Potdevin, G. Chadeyron, D. Boyer, B. Caillier, and R. Mahiou, “Sol–gel based YAG:Tb3+ or Eu3+ phosphors for application in lighting sources,” J. Phys. D.38(17), 3251–3260 (2005).
[CrossRef]

Mater. Res. Bull. (1)

S. H. Ju, S. G. Kim, J. C. Choi, H. L. Park, S.-I. Mho, and T. W. Kim, “Determination of the solid solubility of SrAl2O4 in CaAl2O4 through crystal field-dependent Eu2+ signatures,” Mater. Res. Bull.34(12-13), 1905–1909 (1999).
[CrossRef]

Opt. Express (3)

Opt. Mater. (1)

P. Zhu, Q. Zhu, H. Zhu, H. Zhao, B. Chen, Y. Zhang, X. Wang, and W. Di, “Effect of SiO2 coating on photoluminescence and thermal stability of BaMgAl10O17: Eu2+ under VUV and UV excitation,” Opt. Mater.30(6), 930–934 (2008).
[CrossRef]

Opt. Mater. Express (1)

Semicond. Sci. Technol. (1)

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol. 27(2), 024001 (2012).
[CrossRef]

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Figures (5)

Fig. 1
Fig. 1

XRD spectra of CaxSr1-xAl2O4:Tb3+,Eu3+ phosphors with x = 0, 0.3, 0.7, and 1.

Fig. 2
Fig. 2

PL excitation spectra of CaxSr1-xAl2O4:Tb3+,Eu3+ phosphor.

Fig. 3
Fig. 3

PL emission spectra of CaxSr1-xAl2O4:Tb3+;Eu3+ . The insets are the PL emission spectra of CaxSr1-xAl2O4:Tb3+ and CaxSr1-xAl2O4:Eu3+. All the phosphors were excited at 240 nm.

Fig. 4
Fig. 4

PL emission spectra of CaxSr1-xAl2O4:Tb3+,Eu3+. The insets are the PL emission spectra of CaxSr1-xAl2O4:Tb3+ and CaxSr1-xAl2O4:Eu3+. All the phosphors were excited at 227 nm.

Fig. 5
Fig. 5

The CIE diagram showing coordinates of white (A) CaxSr1-xAl2O4:Tb3+,Eu3+, red (B) CaxSr1-xAl2O4:Eu3+ and blue (C) CaxSr1-xAl2O4:Tb3+ phosphor.

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