Abstract

Enhanced electroluminescence (EL) from SiNx light emitting devices (LEDs) with an ITO/SiO2/SiNx/Ag/p/p+-Si/Al structure was observed. Comparing to SiNx LEDs without Ag islands layer, those with Ag islands layer could conduct a higher injection current and extract light more efficiently due to the roughness of Ag islands film. Moreover, the localized surface plasmons induced by Ag islands enhanced the radiative efficiency of LEDs, resulting in the EL enhancement of ~14. By the combination enhancement on light extraction efficiency, radiative efficiency, and current-injection efficiency, the external quantum efficiency of EL from SiNx LEDs was improved by at least one order of magnitude.

© 2012 OSA

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    [CrossRef] [PubMed]
  2. M. Wang, D. Yang, D. Li, Z. Yuan, and D. Que, “Correlation between luminescence and structural evolution of Si-rich silicon oxide film annealed at different temperatures,” J. Appl. Phys.101(10), 103504 (2007).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  5. D. Li, X. Zhang, L. Jin, and D. Yang, “Structure and luminescence evolution of annealed Europium-doped silicon oxides films,” Opt. Express18(26), 27191–27196 (2010).
    [CrossRef] [PubMed]
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    [CrossRef]
  7. B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
    [CrossRef]
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    [CrossRef]
  10. B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008).
    [CrossRef]
  11. F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
    [CrossRef]
  12. Z. T. Kang, B. K. Wagner, J. Parrish, D. Schiff, and C. J. Summers, “Enhancement of white luminescence from SiNx films by surface roughening,” Nanotechnology18(41), 415709 (2007).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef] [PubMed]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef] [PubMed]
  21. R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
    [CrossRef]
  22. R. T. Tung, “Electron transport at metal-semiconductor interfaces: General theory,” Phys. Rev. B Condens. Matter45(23), 13509–13523 (1992).
    [CrossRef] [PubMed]
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    [CrossRef]
  24. A. C. Tamboli, K. C. McGroddy, and E. L. Hu, “Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes,” Phys. Status Solidi C6(S2), S807–S810 (2009).
    [CrossRef]

2012 (2)

F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
[CrossRef]

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

2011 (2)

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

2010 (1)

2009 (4)

A. C. Tamboli, K. C. McGroddy, and E. L. Hu, “Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes,” Phys. Status Solidi C6(S2), S807–S810 (2009).
[CrossRef]

B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes,” Appl. Phys. Lett.95(15), 153103 (2009).
[CrossRef]

B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate,” Appl. Phys. Lett.95(7), 073113 (2009).
[CrossRef]

D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009).
[CrossRef]

2008 (2)

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008).
[CrossRef]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

2007 (4)

D.-M. Yeh, C.-F. Huang, C.-Y. Chen, Y.-C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett.91(17), 171103 (2007).
[CrossRef]

M. Wang, D. Yang, D. Li, Z. Yuan, and D. Que, “Correlation between luminescence and structural evolution of Si-rich silicon oxide film annealed at different temperatures,” J. Appl. Phys.101(10), 103504 (2007).
[CrossRef]

Z. T. Kang, B. K. Wagner, J. Parrish, D. Schiff, and C. J. Summers, “Enhancement of white luminescence from SiNx films by surface roughening,” Nanotechnology18(41), 415709 (2007).
[CrossRef]

T.-C. Tsai, L.-Z. Yu, and C.-T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology18(27), 275707 (2007).
[CrossRef]

2006 (2)

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

N. Gaillard, L. Pinzelli, M. Gros-Jean, and A. Bsiesy, “In situ electric field simulation in metal/insulator/metal capacitors,” Appl. Phys. Lett.89(13), 133506 (2006).
[CrossRef]

2005 (1)

R. Paiella, “Tunable surface plasmons in coupled metallo-dielectric multiple layers for light-emission efficiency enhancement,” Appl. Phys. Lett.87(11), 111104 (2005).
[CrossRef]

2004 (2)

W. L. Barnes, “Light-emitting devices: turning the tables on surface plasmons,” Nat. Mater.3(9), 588–589 (2004).
[CrossRef] [PubMed]

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004).
[CrossRef] [PubMed]

2003 (1)

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

2002 (1)

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

2000 (1)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

1992 (1)

R. T. Tung, “Electron transport at metal-semiconductor interfaces: General theory,” Phys. Rev. B Condens. Matter45(23), 13509–13523 (1992).
[CrossRef] [PubMed]

Anopchenko, A.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

Barnes, W. L.

W. L. Barnes, “Light-emitting devices: turning the tables on surface plasmons,” Nat. Mater.3(9), 588–589 (2004).
[CrossRef] [PubMed]

Bsiesy, A.

N. Gaillard, L. Pinzelli, M. Gros-Jean, and A. Bsiesy, “In situ electric field simulation in metal/insulator/metal capacitors,” Appl. Phys. Lett.89(13), 133506 (2006).
[CrossRef]

Byeon, C. C.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008).
[CrossRef]

Cao, L.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

Cao, Z. X.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

Chen, C.-Y.

D.-M. Yeh, C.-F. Huang, C.-Y. Chen, Y.-C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett.91(17), 171103 (2007).
[CrossRef]

Cho, C.-H.

B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes,” Appl. Phys. Lett.95(15), 153103 (2009).
[CrossRef]

B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate,” Appl. Phys. Lett.95(7), 073113 (2009).
[CrossRef]

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008).
[CrossRef]

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

Dal Negro, L.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Davis, R. F.

B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate,” Appl. Phys. Lett.95(7), 073113 (2009).
[CrossRef]

B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes,” Appl. Phys. Lett.95(15), 153103 (2009).
[CrossRef]

DenBaars, S. P.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

Di Stefano, G.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Dierolf, V.

Fallica, P. G.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Farrell, R. M.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

Franz├▓, G.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Gaillard, N.

N. Gaillard, L. Pinzelli, M. Gros-Jean, and A. Bsiesy, “In situ electric field simulation in metal/insulator/metal capacitors,” Appl. Phys. Lett.89(13), 133506 (2006).
[CrossRef]

Gros-Jean, M.

N. Gaillard, L. Pinzelli, M. Gros-Jean, and A. Bsiesy, “In situ electric field simulation in metal/insulator/metal capacitors,” Appl. Phys. Lett.89(13), 133506 (2006).
[CrossRef]

Hu, E. L.

A. C. Tamboli, K. C. McGroddy, and E. L. Hu, “Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes,” Phys. Status Solidi C6(S2), S807–S810 (2009).
[CrossRef]

Huang, C.-F.

D.-M. Yeh, C.-F. Huang, C.-Y. Chen, Y.-C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett.91(17), 171103 (2007).
[CrossRef]

Huang, J.

D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009).
[CrossRef]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

Iacona, F.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Irrera, A.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Jin, L.

Kang, Z. T.

Z. T. Kang, B. K. Wagner, J. Parrish, D. Schiff, and C. J. Summers, “Enhancement of white luminescence from SiNx films by surface roughening,” Nanotechnology18(41), 415709 (2007).
[CrossRef]

Kim, B.-H.

B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes,” Appl. Phys. Lett.95(15), 153103 (2009).
[CrossRef]

B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate,” Appl. Phys. Lett.95(7), 073113 (2009).
[CrossRef]

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008).
[CrossRef]

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

Kim, J. S.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008).
[CrossRef]

Kwon, M.-K.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008).
[CrossRef]

Lee, C.-T.

T.-C. Tsai, L.-Z. Yu, and C.-T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology18(27), 275707 (2007).
[CrossRef]

Lee, J.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008).
[CrossRef]

Li, D.

F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
[CrossRef]

D. Li, X. Zhang, L. Jin, and D. Yang, “Structure and luminescence evolution of annealed Europium-doped silicon oxides films,” Opt. Express18(26), 27191–27196 (2010).
[CrossRef] [PubMed]

D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009).
[CrossRef]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

M. Wang, D. Yang, D. Li, Z. Yuan, and D. Que, “Correlation between luminescence and structural evolution of Si-rich silicon oxide film annealed at different temperatures,” J. Appl. Phys.101(10), 103504 (2007).
[CrossRef]

Liu, G.

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

Lu, Y.-C.

D.-M. Yeh, C.-F. Huang, C.-Y. Chen, Y.-C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett.91(17), 171103 (2007).
[CrossRef]

Mazzoleni, C.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

McGroddy, K. C.

A. C. Tamboli, K. C. McGroddy, and E. L. Hu, “Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes,” Phys. Status Solidi C6(S2), S807–S810 (2009).
[CrossRef]

Miritello, M.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Mukai, T.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004).
[CrossRef] [PubMed]

Mun, J.-S.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008).
[CrossRef]

Narukawa, Y.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004).
[CrossRef] [PubMed]

Niki, I.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004).
[CrossRef] [PubMed]

Okamoto, K.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004).
[CrossRef] [PubMed]

Pacifici, D.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Paiella, R.

R. Paiella, “Tunable surface plasmons in coupled metallo-dielectric multiple layers for light-emission efficiency enhancement,” Appl. Phys. Lett.87(11), 111104 (2005).
[CrossRef]

Park, N.-M.

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

Park, S.-J.

B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate,” Appl. Phys. Lett.95(7), 073113 (2009).
[CrossRef]

B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes,” Appl. Phys. Lett.95(15), 153103 (2009).
[CrossRef]

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008).
[CrossRef]

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

Park, T.-Y.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008).
[CrossRef]

Parrish, J.

Z. T. Kang, B. K. Wagner, J. Parrish, D. Schiff, and C. J. Summers, “Enhancement of white luminescence from SiNx films by surface roughening,” Nanotechnology18(41), 415709 (2007).
[CrossRef]

Pavesi, L.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Pinzelli, L.

N. Gaillard, L. Pinzelli, M. Gros-Jean, and A. Bsiesy, “In situ electric field simulation in metal/insulator/metal capacitors,” Appl. Phys. Lett.89(13), 133506 (2006).
[CrossRef]

Poplawsky, J. D.

Priolo, F.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Que, D.

F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
[CrossRef]

M. Wang, D. Yang, D. Li, Z. Yuan, and D. Que, “Correlation between luminescence and structural evolution of Si-rich silicon oxide film annealed at different temperatures,” J. Appl. Phys.101(10), 103504 (2007).
[CrossRef]

Sanfilippo, D.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Scherer, A.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004).
[CrossRef] [PubMed]

Schiff, D.

Z. T. Kang, B. K. Wagner, J. Parrish, D. Schiff, and C. J. Summers, “Enhancement of white luminescence from SiNx films by surface roughening,” Nanotechnology18(41), 415709 (2007).
[CrossRef]

Shvartser, A.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004).
[CrossRef] [PubMed]

Speck, J. S.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

Summers, C. J.

Z. T. Kang, B. K. Wagner, J. Parrish, D. Schiff, and C. J. Summers, “Enhancement of white luminescence from SiNx films by surface roughening,” Nanotechnology18(41), 415709 (2007).
[CrossRef]

Sung, G. Y.

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

Tamboli, A. C.

A. C. Tamboli, K. C. McGroddy, and E. L. Hu, “Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes,” Phys. Status Solidi C6(S2), S807–S810 (2009).
[CrossRef]

Tansu, N.

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

Tsai, T.-C.

T.-C. Tsai, L.-Z. Yu, and C.-T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology18(27), 275707 (2007).
[CrossRef]

Tung, R. T.

R. T. Tung, “Electron transport at metal-semiconductor interfaces: General theory,” Phys. Rev. B Condens. Matter45(23), 13509–13523 (1992).
[CrossRef] [PubMed]

Wagner, B. K.

Z. T. Kang, B. K. Wagner, J. Parrish, D. Schiff, and C. J. Summers, “Enhancement of white luminescence from SiNx films by surface roughening,” Nanotechnology18(41), 415709 (2007).
[CrossRef]

Wang, F.

F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
[CrossRef]

Wang, M.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

M. Wang, D. Yang, D. Li, Z. Yuan, and D. Que, “Correlation between luminescence and structural evolution of Si-rich silicon oxide film annealed at different temperatures,” J. Appl. Phys.101(10), 103504 (2007).
[CrossRef]

Wang, Y. G.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

Wang, Y. Q.

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

Wu, F.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

Yang, C. C.

D.-M. Yeh, C.-F. Huang, C.-Y. Chen, Y.-C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett.91(17), 171103 (2007).
[CrossRef]

Yang, D.

F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
[CrossRef]

D. Li, X. Zhang, L. Jin, and D. Yang, “Structure and luminescence evolution of annealed Europium-doped silicon oxides films,” Opt. Express18(26), 27191–27196 (2010).
[CrossRef] [PubMed]

D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009).
[CrossRef]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

M. Wang, D. Yang, D. Li, Z. Yuan, and D. Que, “Correlation between luminescence and structural evolution of Si-rich silicon oxide film annealed at different temperatures,” J. Appl. Phys.101(10), 103504 (2007).
[CrossRef]

Yeh, D.-M.

D.-M. Yeh, C.-F. Huang, C.-Y. Chen, Y.-C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett.91(17), 171103 (2007).
[CrossRef]

Young, E. C.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

Yu, L.-Z.

T.-C. Tsai, L.-Z. Yu, and C.-T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology18(27), 275707 (2007).
[CrossRef]

Yuan, Z.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

M. Wang, D. Yang, D. Li, Z. Yuan, and D. Que, “Correlation between luminescence and structural evolution of Si-rich silicon oxide film annealed at different temperatures,” J. Appl. Phys.101(10), 103504 (2007).
[CrossRef]

Zhang, J.

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

Zhang, X.

Zhao, H.

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

Adv. Mater. (1)

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater.20(16), 3100–3104 (2008).
[CrossRef]

Appl. Phys. Lett. (10)

F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
[CrossRef]

Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,” Appl. Phys. Lett.83(17), 3474–3476 (2003).
[CrossRef]

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate,” Appl. Phys. Lett.95(7), 073113 (2009).
[CrossRef]

R. Paiella, “Tunable surface plasmons in coupled metallo-dielectric multiple layers for light-emission efficiency enhancement,” Appl. Phys. Lett.87(11), 111104 (2005).
[CrossRef]

D.-M. Yeh, C.-F. Huang, C.-Y. Chen, Y.-C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett.91(17), 171103 (2007).
[CrossRef]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

B.-H. Kim, R. F. Davis, C.-H. Cho, and S.-J. Park, “Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes,” Appl. Phys. Lett.95(15), 153103 (2009).
[CrossRef]

N. Gaillard, L. Pinzelli, M. Gros-Jean, and A. Bsiesy, “In situ electric field simulation in metal/insulator/metal capacitors,” Appl. Phys. Lett.89(13), 133506 (2006).
[CrossRef]

J. Appl. Phys. (2)

M. Wang, D. Yang, D. Li, Z. Yuan, and D. Que, “Correlation between luminescence and structural evolution of Si-rich silicon oxide film annealed at different temperatures,” J. Appl. Phys.101(10), 103504 (2007).
[CrossRef]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

Nanotechnology (2)

T.-C. Tsai, L.-Z. Yu, and C.-T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology18(27), 275707 (2007).
[CrossRef]

Z. T. Kang, B. K. Wagner, J. Parrish, D. Schiff, and C. J. Summers, “Enhancement of white luminescence from SiNx films by surface roughening,” Nanotechnology18(41), 415709 (2007).
[CrossRef]

Nat. Mater. (2)

W. L. Barnes, “Light-emitting devices: turning the tables on surface plasmons,” Nat. Mater.3(9), 588–589 (2004).
[CrossRef] [PubMed]

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004).
[CrossRef] [PubMed]

Nature (1)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Opt. Express (2)

Phys. Rev. B Condens. Matter (1)

R. T. Tung, “Electron transport at metal-semiconductor interfaces: General theory,” Phys. Rev. B Condens. Matter45(23), 13509–13523 (1992).
[CrossRef] [PubMed]

Phys. Status Solidi C (1)

A. C. Tamboli, K. C. McGroddy, and E. L. Hu, “Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes,” Phys. Status Solidi C6(S2), S807–S810 (2009).
[CrossRef]

Physica E (1)

D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009).
[CrossRef]

Semicond. Sci. Technol. (1)

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

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