Abstract

In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018 cm−3 the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6x1018 cm−3. Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.

© 2011 OSA

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2011 (12)

H. Kuo, C. Hung, H. Chen, K. Chen, C. Wang, C. Sher, C. Yeh, C. Lin, C. Chen, and Y. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express19, A930–A936 (2011).
[CrossRef] [PubMed]

H. Menkara, R. A. Gilstrap, T. Morris, M. Minkara, B. K. Wagner, and C. J. Summers, “Development of nanophosphors for light emitting diodes,” Opt. Express19, A972–A981 (2011).
[CrossRef] [PubMed]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011).
[CrossRef]

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011).
[CrossRef]

C. Wetzel and T. Detchprohm, “Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency,” Opt. Express19, A962–A971 (2011).
[CrossRef] [PubMed]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19, A991–A1007 (2011).
[CrossRef] [PubMed]

X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98, 171111 (2011).
[CrossRef]

K. Hazu and S. F. Chichibu, “Optical polarization properties of m-plane AlxGa1–xN epitaxial films grown on m-plane freestanding GaN substrates toward nonpolar ultraviolet LEDs,” Opt. Express19, A1008–A1021 (2011).
[CrossRef] [PubMed]

M. Mirzaei and M. Mirzaei, “A computational study of atomic oxygen-doped silicon carbide nanotubes,” J. Mol. Model.17, 527–531 (2011).
[CrossRef]

S. Choudhary and S. Qureshi, “Theoretical study on transport properties of a BN co-doped SiC nanotube,” Phys. Lett. A375, 3382–3385 (2011).
[CrossRef]

Y. Ou, D. Corell, C. Dam-Hansen, P. Petersen, and H. Ou, “Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode,” Opt. Express19, A166–A172 (2011).
[CrossRef] [PubMed]

2010 (6)

X. Li, Z. Chen, and E. Shi, “Effect of doping on the Raman scattering of 6H-SiC crystals,” Physica B405, 2423–2426 (2010).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010).
[CrossRef]

H. Yamamoto, “White LED phosphors: the next step,” Proc. SPIE7598, 759808 (2010).
[CrossRef]

C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010).
[CrossRef]

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97, 111105 (2010).
[CrossRef]

2009 (1)

J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009).
[CrossRef]

2008 (2)

G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008).
[CrossRef]

Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008).
[CrossRef]

2007 (1)

S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys.40, 4771–4774 (2007).
[CrossRef]

2006 (1)

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
[CrossRef]

2005 (1)

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005).
[CrossRef]

2004 (1)

J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004).
[CrossRef]

2002 (1)

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002).
[CrossRef]

1997 (1)

P. Schlotter, R. Bompiedi, and J. Schneider, “Luminescence conversion of blue light emitting diodes,” Appl. Phys. A64, 417–418 (1997).
[CrossRef]

1994 (1)

P. Bäume, F. Kubacki, and J. Gutowski, “Characterization of impurities in II–VI semiconductors by time-resolved lineshape analysis of donor-acceptor pair spectra,” J. Cryst. Growth138, 266–273 (1994).
[CrossRef]

1987 (1)

H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987).
[CrossRef]

1986 (1)

M. Ohishi, “Time-resolved studies on recombination luminescence of donor-acceptor pairs in ZnSe,” Jpn. J. Appl. Phys.25, 1546–1551 (1986).
[CrossRef]

1983 (1)

G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983).
[CrossRef]

1980 (1)

M. Ikeda, H. Matsunami, and T. Tanaka, “Site effect on the impurity levels in 4H, 6H, and 15R SiC,” Phys. Rev. B22, 2842–2854 (1980).
[CrossRef]

1964 (1)

W. J. Choyke, D. R. Hamilton, and L. Patrick, “Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption,” Phys. Rev.133, 1163–1166 (1964).
[CrossRef]

1963 (1)

D. R. Hamilton, W. J. Choyke, and L. Patrick, “Photoluminescence of nitrogen-exciton complexes in 6H SiC,” Phys. Rev.131, 127–133 (1963).
[CrossRef]

Akasaki, I.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
[CrossRef]

Amano, H.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
[CrossRef]

Bairamov, B. H.

G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983).
[CrossRef]

Bäume, P.

P. Bäume, F. Kubacki, and J. Gutowski, “Characterization of impurities in II–VI semiconductors by time-resolved lineshape analysis of donor-acceptor pair spectra,” J. Cryst. Growth138, 266–273 (1994).
[CrossRef]

Bergman, J. P.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
[CrossRef]

Besson, P.

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002).
[CrossRef]

Bompiedi, R.

P. Schlotter, R. Bompiedi, and J. Schneider, “Luminescence conversion of blue light emitting diodes,” Appl. Phys. A64, 417–418 (1997).
[CrossRef]

Chandrashekhar, M.

J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009).
[CrossRef]

Chang, C.

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010).
[CrossRef]

Chang, S.

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010).
[CrossRef]

Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008).
[CrossRef]

Chen, C.

H. Kuo, C. Hung, H. Chen, K. Chen, C. Wang, C. Sher, C. Yeh, C. Lin, C. Chen, and Y. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express19, A930–A936 (2011).
[CrossRef] [PubMed]

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010).
[CrossRef]

Chen, H.

Chen, K.

Chen, L.

Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008).
[CrossRef]

Chen, Z.

X. Li, Z. Chen, and E. Shi, “Effect of doping on the Raman scattering of 6H-SiC crystals,” Physica B405, 2423–2426 (2010).
[CrossRef]

Cheng, Y.

H. Kuo, C. Hung, H. Chen, K. Chen, C. Wang, C. Sher, C. Yeh, C. Lin, C. Chen, and Y. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express19, A930–A936 (2011).
[CrossRef] [PubMed]

Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008).
[CrossRef]

Chi, Y.

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010).
[CrossRef]

Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008).
[CrossRef]

Chichibu, S. F.

K. Hazu and S. F. Chichibu, “Optical polarization properties of m-plane AlxGa1–xN epitaxial films grown on m-plane freestanding GaN substrates toward nonpolar ultraviolet LEDs,” Opt. Express19, A1008–A1021 (2011).
[CrossRef] [PubMed]

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
[CrossRef]

Choi, J.

J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004).
[CrossRef]

Chou, P.

Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008).
[CrossRef]

Choudhary, S.

S. Choudhary and S. Qureshi, “Theoretical study on transport properties of a BN co-doped SiC nanotube,” Phys. Lett. A375, 3382–3385 (2011).
[CrossRef]

Choyke, W. J.

W. J. Choyke, D. R. Hamilton, and L. Patrick, “Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption,” Phys. Rev.133, 1163–1166 (1964).
[CrossRef]

D. R. Hamilton, W. J. Choyke, and L. Patrick, “Photoluminescence of nitrogen-exciton complexes in 6H SiC,” Phys. Rev.131, 127–133 (1963).
[CrossRef]

Chua, C.

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010).
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Dam-Hansen, C.

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T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011).
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Dierolf, V.

Dong, X.

C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010).
[CrossRef]

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X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011).
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C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010).
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H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987).
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J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009).
[CrossRef]

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X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011).
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V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.

Gulbinas, K.

V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.

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P. Bäume, F. Kubacki, and J. Gutowski, “Characterization of impurities in II–VI semiconductors by time-resolved lineshape analysis of donor-acceptor pair spectra,” J. Cryst. Growth138, 266–273 (1994).
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D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002).
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W. J. Choyke, D. R. Hamilton, and L. Patrick, “Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption,” Phys. Rev.133, 1163–1166 (1964).
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D. R. Hamilton, W. J. Choyke, and L. Patrick, “Photoluminescence of nitrogen-exciton complexes in 6H SiC,” Phys. Rev.131, 127–133 (1963).
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Henry, A.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
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R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005).
[CrossRef]

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C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010).
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Hung, J.

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G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983).
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S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
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S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
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J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004).
[CrossRef]

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T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010).
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V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.

Juestel, T.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005).
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S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
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V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.

Kim, G.

J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004).
[CrossRef]

Kim, J.

J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004).
[CrossRef]

Kim, T.

J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004).
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S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
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S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
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T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010).
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T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010).
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T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010).
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G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008).
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R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005).
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P. Bäume, F. Kubacki, and J. Gutowski, “Characterization of impurities in II–VI semiconductors by time-resolved lineshape analysis of donor-acceptor pair spectra,” J. Cryst. Growth138, 266–273 (1994).
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X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011).
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C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010).
[CrossRef]

Li, X.

X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011).
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V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.

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G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008).
[CrossRef]

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S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
[CrossRef]

Magnea, N.

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002).
[CrossRef]

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M. Ikeda, H. Matsunami, and T. Tanaka, “Site effect on the impurity levels in 4H, 6H, and 15R SiC,” Phys. Rev. B22, 2842–2854 (1980).
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H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987).
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G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983).
[CrossRef]

Monemar, B.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
[CrossRef]

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D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002).
[CrossRef]

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Mueller, G.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005).
[CrossRef]

Mueller-Mach, R.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005).
[CrossRef]

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H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987).
[CrossRef]

Nakamura, S.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011).
[CrossRef]

Nakamura, Y.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
[CrossRef]

Nakashima, S.

H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987).
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M. Ohishi, “Time-resolved studies on recombination luminescence of donor-acceptor pairs in ZnSe,” Jpn. J. Appl. Phys.25, 1546–1551 (1986).
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S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
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Ou, H.

Y. Ou, D. Corell, C. Dam-Hansen, P. Petersen, and H. Ou, “Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode,” Opt. Express19, A166–A172 (2011).
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V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.

Ou, Y.

Y. Ou, D. Corell, C. Dam-Hansen, P. Petersen, and H. Ou, “Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode,” Opt. Express19, A166–A172 (2011).
[CrossRef] [PubMed]

V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.

Pan, S. S.

S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys.40, 4771–4774 (2007).
[CrossRef]

Park, H.

J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004).
[CrossRef]

Park, Y.

J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004).
[CrossRef]

Patrick, L.

W. J. Choyke, D. R. Hamilton, and L. Patrick, “Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption,” Phys. Rev.133, 1163–1166 (1964).
[CrossRef]

D. R. Hamilton, W. J. Choyke, and L. Patrick, “Photoluminescence of nitrogen-exciton complexes in 6H SiC,” Phys. Rev.131, 127–133 (1963).
[CrossRef]

Petersen, P.

Poplawsky, J. D.

Powell, A.

G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008).
[CrossRef]

Prosa, T. J.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011).
[CrossRef]

Qureshi, S.

S. Choudhary and S. Qureshi, “Theoretical study on transport properties of a BN co-doped SiC nanotube,” Phys. Lett. A375, 3382–3385 (2011).
[CrossRef]

Rana, F.

J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009).
[CrossRef]

Renard, P.

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002).
[CrossRef]

Schlotter, P.

P. Schlotter, R. Bompiedi, and J. Schneider, “Luminescence conversion of blue light emitting diodes,” Appl. Phys. A64, 417–418 (1997).
[CrossRef]

Schmidt, P.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005).
[CrossRef]

Schneider, J.

P. Schlotter, R. Bompiedi, and J. Schneider, “Luminescence conversion of blue light emitting diodes,” Appl. Phys. A64, 417–418 (1997).
[CrossRef]

Schnick, W.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005).
[CrossRef]

Schubert, E. F.

X. Guo, J. W. Graff, and E. F. Schubert, “Photon recycling semiconductor light-emitting diode,” in Proceedings of IEEE Conference on Electron Devices Meeting (IEEE, 1999), pp. 600–603.

E. F. Schubert, Light-Emitting Diodes (Cambridge University Press, 2006).
[CrossRef]

Shen, C.

C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010).
[CrossRef]

Sher, C.

Shi, E.

X. Li, Z. Chen, and E. Shi, “Effect of doping on the Raman scattering of 6H-SiC crystals,” Physica B405, 2423–2426 (2010).
[CrossRef]

Shigeta, M.

H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987).
[CrossRef]

Shih, P.

Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008).
[CrossRef]

Shivaraman, R.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011).
[CrossRef]

Shivaraman, S.

J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009).
[CrossRef]

Shu, C.

Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008).
[CrossRef]

Song, R.

X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011).
[CrossRef]

Song, Y.

Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008).
[CrossRef]

Sotta, D.

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002).
[CrossRef]

Speck, J. S.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011).
[CrossRef]

Spencer, M. G.

J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009).
[CrossRef]

Stadler, F.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005).
[CrossRef]

Strait, J. H.

J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009).
[CrossRef]

Suda, J.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
[CrossRef]

Summers, C. J.

Suzuki, A.

H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987).
[CrossRef]

Syväjärvi, M.

V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.

M. Syväjärvi and R. Yakimova, “Sublimation epitaxial growth of hexagonal and cubic SiC,” in Encyclopedia–the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011).
[CrossRef] [PubMed]

Tanaka, T.

M. Ikeda, H. Matsunami, and T. Tanaka, “Site effect on the impurity levels in 4H, 6H, and 15R SiC,” Phys. Rev. B22, 2842–2854 (1980).
[CrossRef]

Tansu, N.

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98, 171111 (2011).
[CrossRef]

X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011).
[CrossRef]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011).
[CrossRef]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19, A991–A1007 (2011).
[CrossRef] [PubMed]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97, 111105 (2010).
[CrossRef]

Teng, X. M.

S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys.40, 4771–4774 (2007).
[CrossRef]

Toporov, V. V.

G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983).
[CrossRef]

Tyagi, A.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011).
[CrossRef]

Uemoto, A.

H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987).
[CrossRef]

Vogt, P.

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010).
[CrossRef]

Wagner, B. K.

Wang, C.

Wetzel, C.

Weyers, M.

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010).
[CrossRef]

Wu, C.

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010).
[CrossRef]

Xuan, G.

G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008).
[CrossRef]

Yakimova, R.

M. Syväjärvi and R. Yakimova, “Sublimation epitaxial growth of hexagonal and cubic SiC,” in Encyclopedia–the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011).
[CrossRef] [PubMed]

Yamamoto, H.

H. Yamamoto, “White LED phosphors: the next step,” Proc. SPIE7598, 759808 (2010).
[CrossRef]

Yang, C.

Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008).
[CrossRef]

Yang, Z.

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010).
[CrossRef]

Ye, C.

S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys.40, 4771–4774 (2007).
[CrossRef]

Yeh, C.

Yoshimoto, M.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
[CrossRef]

Yugami, H.

H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987).
[CrossRef]

Zhang, J.

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98, 171111 (2011).
[CrossRef]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19, A991–A1007 (2011).
[CrossRef] [PubMed]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97, 111105 (2010).
[CrossRef]

Zhang, X.

G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008).
[CrossRef]

Zhao, H.

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98, 171111 (2011).
[CrossRef]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011).
[CrossRef]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19, A991–A1007 (2011).
[CrossRef] [PubMed]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97, 111105 (2010).
[CrossRef]

Zhong, H.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011).
[CrossRef]

Adv. Funct. Mater. (1)

Y. Cheng, G. Lee, P. Chou, L. Chen, Y. Chi, C. Yang, Y. Song, S. Chang, P. Shih, and C. Shu, “Rational design of chelating phosphine functionalized Os(II) emitters and fabrication of orange polymer light-emitting diodes using solution process,” Adv. Funct. Mater.18, 183–194 (2008).
[CrossRef]

Appl. Phys. A (1)

P. Schlotter, R. Bompiedi, and J. Schneider, “Luminescence conversion of blue light emitting diodes,” Appl. Phys. A64, 417–418 (1997).
[CrossRef]

Appl. Phys. Lett. (7)

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98, 151115 (2011).
[CrossRef]

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1–xN quantum well device on semipolar (1011¯) GaN substrate,” Appl. Phys. Lett.98, 191903 (2011).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97, 111105 (2010).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98, 171111 (2011).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97, 171105 (2010).
[CrossRef]

J. Kim, P. Jeon, Y. Park, J. Choi, H. Park, G. Kim, and T. Kim, “White-light generation through ultraviolet-emitting diode and white-emitting phosphor,” Appl. Phys. Lett.85, 3696–3698 (2004).
[CrossRef]

J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95, 051912 (2009).
[CrossRef]

IEEE Photon. J. (1)

X. Li, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photon. J.3, 489–499 (2011).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett.22, 884–886 (2010).
[CrossRef]

J. Appl. Phys. (3)

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys.99, 093108 (2006).
[CrossRef]

H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima, “Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering,” J. Appl. Phys.61, 354–358 (1987).
[CrossRef]

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys.92, 2207–2209 (2002).
[CrossRef]

J. Cryst. Growth (1)

P. Bäume, F. Kubacki, and J. Gutowski, “Characterization of impurities in II–VI semiconductors by time-resolved lineshape analysis of donor-acceptor pair spectra,” J. Cryst. Growth138, 266–273 (1994).
[CrossRef]

J. Electron. Mater. (1)

G. Xuan, P. C. Lv, X. Zhang, J. Kolodzey, G. Desalvo, and A. Powell, “Silicon carbide terahertz emitting devices,” J. Electron. Mater.37, 726–729 (2008).
[CrossRef]

J. Mol. Model. (1)

M. Mirzaei and M. Mirzaei, “A computational study of atomic oxygen-doped silicon carbide nanotubes,” J. Mol. Model.17, 527–531 (2011).
[CrossRef]

J. Phys. D: Appl. Phys. (1)

S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys.40, 4771–4774 (2007).
[CrossRef]

Jpn. J. Appl. Phys. (1)

M. Ohishi, “Time-resolved studies on recombination luminescence of donor-acceptor pairs in ZnSe,” Jpn. J. Appl. Phys.25, 1546–1551 (1986).
[CrossRef]

Opt. Express (6)

Org. Electron. (1)

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron.11, 266–272 (2010).
[CrossRef]

Phys. Lett. A (1)

S. Choudhary and S. Qureshi, “Theoretical study on transport properties of a BN co-doped SiC nanotube,” Phys. Lett. A375, 3382–3385 (2011).
[CrossRef]

Phys. Rev. (2)

D. R. Hamilton, W. J. Choyke, and L. Patrick, “Photoluminescence of nitrogen-exciton complexes in 6H SiC,” Phys. Rev.131, 127–133 (1963).
[CrossRef]

W. J. Choyke, D. R. Hamilton, and L. Patrick, “Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption,” Phys. Rev.133, 1163–1166 (1964).
[CrossRef]

Phys. Rev. B (1)

M. Ikeda, H. Matsunami, and T. Tanaka, “Site effect on the impurity levels in 4H, 6H, and 15R SiC,” Phys. Rev. B22, 2842–2854 (1980).
[CrossRef]

Phys. Status Solidi A (1)

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A202, 1727–1732 (2005).
[CrossRef]

Phys. Status Solidi B (1)

G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, “Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy,” Phys. Status Solidi B119, 595–603 (1983).
[CrossRef]

Physica B (1)

X. Li, Z. Chen, and E. Shi, “Effect of doping on the Raman scattering of 6H-SiC crystals,” Physica B405, 2423–2426 (2010).
[CrossRef]

Proc. SPIE (1)

H. Yamamoto, “White LED phosphors: the next step,” Proc. SPIE7598, 759808 (2010).
[CrossRef]

Other (4)

X. Guo, J. W. Graff, and E. F. Schubert, “Photon recycling semiconductor light-emitting diode,” in Proceedings of IEEE Conference on Electron Devices Meeting (IEEE, 1999), pp. 600–603.

E. F. Schubert, Light-Emitting Diodes (Cambridge University Press, 2006).
[CrossRef]

V. Grivickas, K. Gulbinas, V. Jokubavicius, Y. Ou, H. Ou, M. Linnarsson, M. Syväjärvi, and S. Kamiyama, “Carrier lifetimes in fluorescent 6H-SiC for LEDs application,” presented at the Lithuanian National Physics Conference, Vilnius, Lithuania, October 2011.

M. Syväjärvi and R. Yakimova, “Sublimation epitaxial growth of hexagonal and cubic SiC,” in Encyclopedia–the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011).
[CrossRef] [PubMed]

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Figures (3)

Fig. 1
Fig. 1

(a) Measured PL spectra (inset: zoom-in for sample a, b, and c; PL intensity decreases in the order of d, e, c, b, a), (b) Band diagram of n-type SiC under excitation (black dots represent electrons and unfilled circles represent holes; electron and hole quasi-Fermi levels are represented by EFC and EFV respectively. ED ≈ 0.17 eV [26], EA ≈ 0.72 eV [27], and Eg ≈ 3.02 eV [28]).

Fig. 2
Fig. 2

LO mode of the Raman spectra (inset: positions of LO modes; peak height decreases in the order of a, b, c, e, d).

Fig. 3
Fig. 3

(a) Angular-dependent PL spectra, (b) emission angle versus peak shift and normalized PL intensity (%).

Tables (1)

Tables Icon

Table 1 Boron (NA) and Nitrogen (ND) Concentrations for Samples a, b, c, d, and e

Equations (7)

Equations on this page are rendered with MathJax. Learn more.

n D = N D F D .
F D = 1 1 + 1 2 exp ( E D E F C k T ) .
R D A N D F D N A .
ω P = 4 π n e 2 ɛ m * ,
m λ = 2 dn cos ψ .
n sin ψ = sin θ .
m λ = 2 d n 2 sin 2 θ .

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