Abstract

The silicon-based heterostructures composed of silicon nanowire/silver oxide/silver nanodendrite are first demonstrated as functional light emitting sources after electro-activation. The high fill-factor nanoscale out-of-plane heterostructures are fabricated into silicon substrate using low-cost silver nanoparticles assisted wet chemical etching. The emitted light spectrum spanning a visible–NIR range of 400-850 nm is analyzed to excite three predominant intensity peaks with photon energies of 1.87, 2.05 and 2.27 eV under forward biases of 20-50 V, corresponding to the color of dark red, yellow and green. The heterostructure device proposed paves a way to eliminate the use of relatively expensive direct band gap materials for the potential optoelectronic applications, such as optical interconnections and displays.

© 2011 OSA

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    [CrossRef]
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    [CrossRef] [PubMed]

2011 (3)

C. N. Chen, C. T. Huang, C. L. Chao, M. T. K. Hou, W. C. Hsu, and J. A. Yeh, “Strengthening for sc-Si solar cells by surface modification with nanowires,” J. Microelectromech. Syst.20(3), 549–551 (2011).
[CrossRef]

C. T. Chan and J. A. Yeh, “Powerless tunable photonic crystal with bistable color and millisecond switching,” Opt. Express19(14), 13707–13713 (2011).
[CrossRef] [PubMed]

Z. Huang, N. Geyer, P. Werner, J. de Boor, and U. Gösele, “Metal-assisted chemical etching of silicon: a review,” Adv. Mater. (Deerfield Beach Fla.)23(2), 285–308 (2011).
[CrossRef] [PubMed]

2009 (1)

2008 (2)

Z. Yuan, D. Li, M. Wang, P. Chen, D. Gong, P. Cheng, and D. Yang, “Electroluminescence of SnO2/p-Si heterojunction,” Appl. Phys. Lett.92(12), 121908 (2008).
[CrossRef]

Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, and S. Fung, “Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals,” Appl. Phys. Lett.92(1), 013102 (2008).
[CrossRef]

2007 (1)

S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, “Switchable two-color electroluminescence based on a Si metal-oxide-semiconductor structure doped with Eu,” Appl. Phys. Lett.90(18), 181121 (2007).
[CrossRef]

2006 (2)

C. D. Presti, A. Irrera, G. Franzò, I. Crupi, F. Priolo, F. Iacona, G. Di Stefano, A. Piana, D. Sanfilippo, and P. G. Fallica, “Photonic-crystal silicon-nanocluster light-emitting device,” Appl. Phys. Lett.88(3), 033501 (2006).
[CrossRef]

M. Perálvarez, C. Garcia, M. Lopez, B. Garrido, J. Barreto, C. Dominguez, and J. A. Rodriguez, “Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition,” Appl. Phys. Lett.89(5), 051112 (2006).
[CrossRef]

2005 (2)

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
[CrossRef] [PubMed]

J. F. Pierson and C. Rousselot, “Stability of reactively sputtered silver oxide films,” Surf. Coat. Tech.200(1-4), 276–279 (2005).
[CrossRef]

2004 (1)

A. Chatterjee, B. Bhuva, and R. Schrimpf, “High-speed light modulation in avalanche breakdown mode for Si diodes,” IEEE Electron. Device Lett.25(9), 628–630 (2004).
[CrossRef]

2003 (1)

D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, “Small-diameter silicon nanowire surfaces,” Science299(5614), 1874–1877 (2003).
[CrossRef] [PubMed]

2002 (3)

J. Zheng and R. M. Dickson, “Individual water-soluble dendrimer-encapsulated silver nanodot fluorescence,” J. Am. Chem. Soc.124(47), 13982–13983 (2002).
[CrossRef] [PubMed]

T. H. Lee, J. I. Gonzalez, and R. M. Dickson, “Strongly enhanced field-dependent single-molecule electroluminescence,” Proc. Natl. Acad. Sci. U.S.A.99(16), 10272–10275 (2002).
[CrossRef] [PubMed]

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. Fallica, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

1993 (1)

A. J. Varkey and A. F. Fort, “Some optical properties of silver peroxide (AgO) and silver oxide (Ag2O) films produced by chemical-bath deposition,” Sol. Energy Mater. Sol. Cells29(3), 253–259 (1993).
[CrossRef]

1981 (1)

S. Takata, T. Minani, and H. Nanto, “DC EL in annealed thin film of sputtered ZnO,” Jpn. J. Appl. Phys.20(9), 1759–1760 (1981).
[CrossRef]

Atwater, H. A.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
[CrossRef] [PubMed]

Au, F. C. K.

D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, “Small-diameter silicon nanowire surfaces,” Science299(5614), 1874–1877 (2003).
[CrossRef] [PubMed]

Barreto, J.

M. Perálvarez, C. Garcia, M. Lopez, B. Garrido, J. Barreto, C. Dominguez, and J. A. Rodriguez, “Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition,” Appl. Phys. Lett.89(5), 051112 (2006).
[CrossRef]

Bhuva, B.

A. Chatterjee, B. Bhuva, and R. Schrimpf, “High-speed light modulation in avalanche breakdown mode for Si diodes,” IEEE Electron. Device Lett.25(9), 628–630 (2004).
[CrossRef]

Bourianoff, G. I.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
[CrossRef] [PubMed]

Cen, Z. H.

Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, and S. Fung, “Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals,” Appl. Phys. Lett.92(1), 013102 (2008).
[CrossRef]

Chan, C. T.

Chao, C. L.

C. N. Chen, C. T. Huang, C. L. Chao, M. T. K. Hou, W. C. Hsu, and J. A. Yeh, “Strengthening for sc-Si solar cells by surface modification with nanowires,” J. Microelectromech. Syst.20(3), 549–551 (2011).
[CrossRef]

Chatterjee, A.

A. Chatterjee, B. Bhuva, and R. Schrimpf, “High-speed light modulation in avalanche breakdown mode for Si diodes,” IEEE Electron. Device Lett.25(9), 628–630 (2004).
[CrossRef]

Chen, C. N.

C. N. Chen, C. T. Huang, C. L. Chao, M. T. K. Hou, W. C. Hsu, and J. A. Yeh, “Strengthening for sc-Si solar cells by surface modification with nanowires,” J. Microelectromech. Syst.20(3), 549–551 (2011).
[CrossRef]

Chen, P.

Z. Yuan, D. Li, M. Wang, P. Chen, D. Gong, P. Cheng, and D. Yang, “Electroluminescence of SnO2/p-Si heterojunction,” Appl. Phys. Lett.92(12), 121908 (2008).
[CrossRef]

Chen, T. P.

Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, and S. Fung, “Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals,” Appl. Phys. Lett.92(1), 013102 (2008).
[CrossRef]

Cheng, P.

Z. Yuan, D. Li, M. Wang, P. Chen, D. Gong, P. Cheng, and D. Yang, “Electroluminescence of SnO2/p-Si heterojunction,” Appl. Phys. Lett.92(12), 121908 (2008).
[CrossRef]

Chyan, J. Y.

Crupi, I.

C. D. Presti, A. Irrera, G. Franzò, I. Crupi, F. Priolo, F. Iacona, G. Di Stefano, A. Piana, D. Sanfilippo, and P. G. Fallica, “Photonic-crystal silicon-nanocluster light-emitting device,” Appl. Phys. Lett.88(3), 033501 (2006).
[CrossRef]

de Boor, J.

Z. Huang, N. Geyer, P. Werner, J. de Boor, and U. Gösele, “Metal-assisted chemical etching of silicon: a review,” Adv. Mater. (Deerfield Beach Fla.)23(2), 285–308 (2011).
[CrossRef] [PubMed]

Di Stefano, G.

C. D. Presti, A. Irrera, G. Franzò, I. Crupi, F. Priolo, F. Iacona, G. Di Stefano, A. Piana, D. Sanfilippo, and P. G. Fallica, “Photonic-crystal silicon-nanocluster light-emitting device,” Appl. Phys. Lett.88(3), 033501 (2006).
[CrossRef]

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. Fallica, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Dickson, R. M.

T. H. Lee, J. I. Gonzalez, and R. M. Dickson, “Strongly enhanced field-dependent single-molecule electroluminescence,” Proc. Natl. Acad. Sci. U.S.A.99(16), 10272–10275 (2002).
[CrossRef] [PubMed]

J. Zheng and R. M. Dickson, “Individual water-soluble dendrimer-encapsulated silver nanodot fluorescence,” J. Am. Chem. Soc.124(47), 13982–13983 (2002).
[CrossRef] [PubMed]

Ding, L.

Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, and S. Fung, “Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals,” Appl. Phys. Lett.92(1), 013102 (2008).
[CrossRef]

Dominguez, C.

M. Perálvarez, C. Garcia, M. Lopez, B. Garrido, J. Barreto, C. Dominguez, and J. A. Rodriguez, “Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition,” Appl. Phys. Lett.89(5), 051112 (2006).
[CrossRef]

Fallica, P.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. Fallica, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Fallica, P. G.

C. D. Presti, A. Irrera, G. Franzò, I. Crupi, F. Priolo, F. Iacona, G. Di Stefano, A. Piana, D. Sanfilippo, and P. G. Fallica, “Photonic-crystal silicon-nanocluster light-emitting device,” Appl. Phys. Lett.88(3), 033501 (2006).
[CrossRef]

Fort, A. F.

A. J. Varkey and A. F. Fort, “Some optical properties of silver peroxide (AgO) and silver oxide (Ag2O) films produced by chemical-bath deposition,” Sol. Energy Mater. Sol. Cells29(3), 253–259 (1993).
[CrossRef]

Franzo, G.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. Fallica, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Franzò, G.

C. D. Presti, A. Irrera, G. Franzò, I. Crupi, F. Priolo, F. Iacona, G. Di Stefano, A. Piana, D. Sanfilippo, and P. G. Fallica, “Photonic-crystal silicon-nanocluster light-emitting device,” Appl. Phys. Lett.88(3), 033501 (2006).
[CrossRef]

Fung, S.

Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, and S. Fung, “Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals,” Appl. Phys. Lett.92(1), 013102 (2008).
[CrossRef]

Garcia, C.

M. Perálvarez, C. Garcia, M. Lopez, B. Garrido, J. Barreto, C. Dominguez, and J. A. Rodriguez, “Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition,” Appl. Phys. Lett.89(5), 051112 (2006).
[CrossRef]

Garrido, B.

M. Perálvarez, C. Garcia, M. Lopez, B. Garrido, J. Barreto, C. Dominguez, and J. A. Rodriguez, “Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition,” Appl. Phys. Lett.89(5), 051112 (2006).
[CrossRef]

Geyer, N.

Z. Huang, N. Geyer, P. Werner, J. de Boor, and U. Gösele, “Metal-assisted chemical etching of silicon: a review,” Adv. Mater. (Deerfield Beach Fla.)23(2), 285–308 (2011).
[CrossRef] [PubMed]

Gong, D.

Z. Yuan, D. Li, M. Wang, P. Chen, D. Gong, P. Cheng, and D. Yang, “Electroluminescence of SnO2/p-Si heterojunction,” Appl. Phys. Lett.92(12), 121908 (2008).
[CrossRef]

Gonzalez, J. I.

T. H. Lee, J. I. Gonzalez, and R. M. Dickson, “Strongly enhanced field-dependent single-molecule electroluminescence,” Proc. Natl. Acad. Sci. U.S.A.99(16), 10272–10275 (2002).
[CrossRef] [PubMed]

Gösele, U.

Z. Huang, N. Geyer, P. Werner, J. de Boor, and U. Gösele, “Metal-assisted chemical etching of silicon: a review,” Adv. Mater. (Deerfield Beach Fla.)23(2), 285–308 (2011).
[CrossRef] [PubMed]

Helm, M.

S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, “Switchable two-color electroluminescence based on a Si metal-oxide-semiconductor structure doped with Eu,” Appl. Phys. Lett.90(18), 181121 (2007).
[CrossRef]

Hou, M. T. K.

C. N. Chen, C. T. Huang, C. L. Chao, M. T. K. Hou, W. C. Hsu, and J. A. Yeh, “Strengthening for sc-Si solar cells by surface modification with nanowires,” J. Microelectromech. Syst.20(3), 549–551 (2011).
[CrossRef]

Hsu, W. C.

C. N. Chen, C. T. Huang, C. L. Chao, M. T. K. Hou, W. C. Hsu, and J. A. Yeh, “Strengthening for sc-Si solar cells by surface modification with nanowires,” J. Microelectromech. Syst.20(3), 549–551 (2011).
[CrossRef]

J. Y. Chyan, W. C. Hsu, and J. A. Yeh, “Broadband antireflective poly-Si nanosponge for thin film solar cells,” Opt. Express17(6), 4646–4651 (2009).
[CrossRef] [PubMed]

Huang, C. T.

C. N. Chen, C. T. Huang, C. L. Chao, M. T. K. Hou, W. C. Hsu, and J. A. Yeh, “Strengthening for sc-Si solar cells by surface modification with nanowires,” J. Microelectromech. Syst.20(3), 549–551 (2011).
[CrossRef]

Huang, Z.

Z. Huang, N. Geyer, P. Werner, J. de Boor, and U. Gösele, “Metal-assisted chemical etching of silicon: a review,” Adv. Mater. (Deerfield Beach Fla.)23(2), 285–308 (2011).
[CrossRef] [PubMed]

Iacona, F.

C. D. Presti, A. Irrera, G. Franzò, I. Crupi, F. Priolo, F. Iacona, G. Di Stefano, A. Piana, D. Sanfilippo, and P. G. Fallica, “Photonic-crystal silicon-nanocluster light-emitting device,” Appl. Phys. Lett.88(3), 033501 (2006).
[CrossRef]

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. Fallica, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Irrera, A.

C. D. Presti, A. Irrera, G. Franzò, I. Crupi, F. Priolo, F. Iacona, G. Di Stefano, A. Piana, D. Sanfilippo, and P. G. Fallica, “Photonic-crystal silicon-nanocluster light-emitting device,” Appl. Phys. Lett.88(3), 033501 (2006).
[CrossRef]

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. Fallica, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Lee, C. S.

D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, “Small-diameter silicon nanowire surfaces,” Science299(5614), 1874–1877 (2003).
[CrossRef] [PubMed]

Lee, S. T.

D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, “Small-diameter silicon nanowire surfaces,” Science299(5614), 1874–1877 (2003).
[CrossRef] [PubMed]

Lee, T. H.

T. H. Lee, J. I. Gonzalez, and R. M. Dickson, “Strongly enhanced field-dependent single-molecule electroluminescence,” Proc. Natl. Acad. Sci. U.S.A.99(16), 10272–10275 (2002).
[CrossRef] [PubMed]

Li, D.

Z. Yuan, D. Li, M. Wang, P. Chen, D. Gong, P. Cheng, and D. Yang, “Electroluminescence of SnO2/p-Si heterojunction,” Appl. Phys. Lett.92(12), 121908 (2008).
[CrossRef]

Li, Y. B.

Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, and S. Fung, “Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals,” Appl. Phys. Lett.92(1), 013102 (2008).
[CrossRef]

Liu, Y.

Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, and S. Fung, “Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals,” Appl. Phys. Lett.92(1), 013102 (2008).
[CrossRef]

Liu, Z.

Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, and S. Fung, “Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals,” Appl. Phys. Lett.92(1), 013102 (2008).
[CrossRef]

Lopez, M.

M. Perálvarez, C. Garcia, M. Lopez, B. Garrido, J. Barreto, C. Dominguez, and J. A. Rodriguez, “Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition,” Appl. Phys. Lett.89(5), 051112 (2006).
[CrossRef]

Ma, D. D. D.

D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, “Small-diameter silicon nanowire surfaces,” Science299(5614), 1874–1877 (2003).
[CrossRef] [PubMed]

Minani, T.

S. Takata, T. Minani, and H. Nanto, “DC EL in annealed thin film of sputtered ZnO,” Jpn. J. Appl. Phys.20(9), 1759–1760 (1981).
[CrossRef]

Miritello, M.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. Fallica, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Nanto, H.

S. Takata, T. Minani, and H. Nanto, “DC EL in annealed thin film of sputtered ZnO,” Jpn. J. Appl. Phys.20(9), 1759–1760 (1981).
[CrossRef]

Pacifici, D.

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. Fallica, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Perálvarez, M.

M. Perálvarez, C. Garcia, M. Lopez, B. Garrido, J. Barreto, C. Dominguez, and J. A. Rodriguez, “Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition,” Appl. Phys. Lett.89(5), 051112 (2006).
[CrossRef]

Piana, A.

C. D. Presti, A. Irrera, G. Franzò, I. Crupi, F. Priolo, F. Iacona, G. Di Stefano, A. Piana, D. Sanfilippo, and P. G. Fallica, “Photonic-crystal silicon-nanocluster light-emitting device,” Appl. Phys. Lett.88(3), 033501 (2006).
[CrossRef]

Pierson, J. F.

J. F. Pierson and C. Rousselot, “Stability of reactively sputtered silver oxide films,” Surf. Coat. Tech.200(1-4), 276–279 (2005).
[CrossRef]

Presti, C. D.

C. D. Presti, A. Irrera, G. Franzò, I. Crupi, F. Priolo, F. Iacona, G. Di Stefano, A. Piana, D. Sanfilippo, and P. G. Fallica, “Photonic-crystal silicon-nanocluster light-emitting device,” Appl. Phys. Lett.88(3), 033501 (2006).
[CrossRef]

Priolo, F.

C. D. Presti, A. Irrera, G. Franzò, I. Crupi, F. Priolo, F. Iacona, G. Di Stefano, A. Piana, D. Sanfilippo, and P. G. Fallica, “Photonic-crystal silicon-nanocluster light-emitting device,” Appl. Phys. Lett.88(3), 033501 (2006).
[CrossRef]

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. Fallica, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Prucnal, S.

S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, “Switchable two-color electroluminescence based on a Si metal-oxide-semiconductor structure doped with Eu,” Appl. Phys. Lett.90(18), 181121 (2007).
[CrossRef]

Rodriguez, J. A.

M. Perálvarez, C. Garcia, M. Lopez, B. Garrido, J. Barreto, C. Dominguez, and J. A. Rodriguez, “Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition,” Appl. Phys. Lett.89(5), 051112 (2006).
[CrossRef]

Rousselot, C.

J. F. Pierson and C. Rousselot, “Stability of reactively sputtered silver oxide films,” Surf. Coat. Tech.200(1-4), 276–279 (2005).
[CrossRef]

Sanfilippo, D.

C. D. Presti, A. Irrera, G. Franzò, I. Crupi, F. Priolo, F. Iacona, G. Di Stefano, A. Piana, D. Sanfilippo, and P. G. Fallica, “Photonic-crystal silicon-nanocluster light-emitting device,” Appl. Phys. Lett.88(3), 033501 (2006).
[CrossRef]

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. Fallica, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

Schrimpf, R.

A. Chatterjee, B. Bhuva, and R. Schrimpf, “High-speed light modulation in avalanche breakdown mode for Si diodes,” IEEE Electron. Device Lett.25(9), 628–630 (2004).
[CrossRef]

Skorupa, W.

S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, “Switchable two-color electroluminescence based on a Si metal-oxide-semiconductor structure doped with Eu,” Appl. Phys. Lett.90(18), 181121 (2007).
[CrossRef]

Sun, J. M.

S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, “Switchable two-color electroluminescence based on a Si metal-oxide-semiconductor structure doped with Eu,” Appl. Phys. Lett.90(18), 181121 (2007).
[CrossRef]

Takata, S.

S. Takata, T. Minani, and H. Nanto, “DC EL in annealed thin film of sputtered ZnO,” Jpn. J. Appl. Phys.20(9), 1759–1760 (1981).
[CrossRef]

Tong, S. Y.

D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, “Small-diameter silicon nanowire surfaces,” Science299(5614), 1874–1877 (2003).
[CrossRef] [PubMed]

Varkey, A. J.

A. J. Varkey and A. F. Fort, “Some optical properties of silver peroxide (AgO) and silver oxide (Ag2O) films produced by chemical-bath deposition,” Sol. Energy Mater. Sol. Cells29(3), 253–259 (1993).
[CrossRef]

Walters, R. J.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
[CrossRef] [PubMed]

Wang, M.

Z. Yuan, D. Li, M. Wang, P. Chen, D. Gong, P. Cheng, and D. Yang, “Electroluminescence of SnO2/p-Si heterojunction,” Appl. Phys. Lett.92(12), 121908 (2008).
[CrossRef]

Werner, P.

Z. Huang, N. Geyer, P. Werner, J. de Boor, and U. Gösele, “Metal-assisted chemical etching of silicon: a review,” Adv. Mater. (Deerfield Beach Fla.)23(2), 285–308 (2011).
[CrossRef] [PubMed]

Wong, J. I.

Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, and S. Fung, “Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals,” Appl. Phys. Lett.92(1), 013102 (2008).
[CrossRef]

Yang, D.

Z. Yuan, D. Li, M. Wang, P. Chen, D. Gong, P. Cheng, and D. Yang, “Electroluminescence of SnO2/p-Si heterojunction,” Appl. Phys. Lett.92(12), 121908 (2008).
[CrossRef]

Yang, M.

Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, and S. Fung, “Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals,” Appl. Phys. Lett.92(1), 013102 (2008).
[CrossRef]

Yeh, J. A.

Yuan, Z.

Z. Yuan, D. Li, M. Wang, P. Chen, D. Gong, P. Cheng, and D. Yang, “Electroluminescence of SnO2/p-Si heterojunction,” Appl. Phys. Lett.92(12), 121908 (2008).
[CrossRef]

Zhang, S.

Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, and S. Fung, “Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals,” Appl. Phys. Lett.92(1), 013102 (2008).
[CrossRef]

Zheng, J.

J. Zheng and R. M. Dickson, “Individual water-soluble dendrimer-encapsulated silver nanodot fluorescence,” J. Am. Chem. Soc.124(47), 13982–13983 (2002).
[CrossRef] [PubMed]

Adv. Mater. (Deerfield Beach Fla.) (1)

Z. Huang, N. Geyer, P. Werner, J. de Boor, and U. Gösele, “Metal-assisted chemical etching of silicon: a review,” Adv. Mater. (Deerfield Beach Fla.)23(2), 285–308 (2011).
[CrossRef] [PubMed]

Appl. Phys. Lett. (6)

Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, and S. Fung, “Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals,” Appl. Phys. Lett.92(1), 013102 (2008).
[CrossRef]

C. D. Presti, A. Irrera, G. Franzò, I. Crupi, F. Priolo, F. Iacona, G. Di Stefano, A. Piana, D. Sanfilippo, and P. G. Fallica, “Photonic-crystal silicon-nanocluster light-emitting device,” Appl. Phys. Lett.88(3), 033501 (2006).
[CrossRef]

M. Perálvarez, C. Garcia, M. Lopez, B. Garrido, J. Barreto, C. Dominguez, and J. A. Rodriguez, “Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition,” Appl. Phys. Lett.89(5), 051112 (2006).
[CrossRef]

F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo, D. Sanfilippo, G. Di Stefano, and P. Fallica, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81(17), 3242–3244 (2002).
[CrossRef]

S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, “Switchable two-color electroluminescence based on a Si metal-oxide-semiconductor structure doped with Eu,” Appl. Phys. Lett.90(18), 181121 (2007).
[CrossRef]

Z. Yuan, D. Li, M. Wang, P. Chen, D. Gong, P. Cheng, and D. Yang, “Electroluminescence of SnO2/p-Si heterojunction,” Appl. Phys. Lett.92(12), 121908 (2008).
[CrossRef]

IEEE Electron. Device Lett. (1)

A. Chatterjee, B. Bhuva, and R. Schrimpf, “High-speed light modulation in avalanche breakdown mode for Si diodes,” IEEE Electron. Device Lett.25(9), 628–630 (2004).
[CrossRef]

J. Am. Chem. Soc. (1)

J. Zheng and R. M. Dickson, “Individual water-soluble dendrimer-encapsulated silver nanodot fluorescence,” J. Am. Chem. Soc.124(47), 13982–13983 (2002).
[CrossRef] [PubMed]

J. Microelectromech. Syst. (1)

C. N. Chen, C. T. Huang, C. L. Chao, M. T. K. Hou, W. C. Hsu, and J. A. Yeh, “Strengthening for sc-Si solar cells by surface modification with nanowires,” J. Microelectromech. Syst.20(3), 549–551 (2011).
[CrossRef]

Jpn. J. Appl. Phys. (1)

S. Takata, T. Minani, and H. Nanto, “DC EL in annealed thin film of sputtered ZnO,” Jpn. J. Appl. Phys.20(9), 1759–1760 (1981).
[CrossRef]

Nat. Mater. (1)

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater.4(2), 143–146 (2005).
[CrossRef] [PubMed]

Opt. Express (2)

Proc. Natl. Acad. Sci. U.S.A. (1)

T. H. Lee, J. I. Gonzalez, and R. M. Dickson, “Strongly enhanced field-dependent single-molecule electroluminescence,” Proc. Natl. Acad. Sci. U.S.A.99(16), 10272–10275 (2002).
[CrossRef] [PubMed]

Science (1)

D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, “Small-diameter silicon nanowire surfaces,” Science299(5614), 1874–1877 (2003).
[CrossRef] [PubMed]

Sol. Energy Mater. Sol. Cells (1)

A. J. Varkey and A. F. Fort, “Some optical properties of silver peroxide (AgO) and silver oxide (Ag2O) films produced by chemical-bath deposition,” Sol. Energy Mater. Sol. Cells29(3), 253–259 (1993).
[CrossRef]

Surf. Coat. Tech. (1)

J. F. Pierson and C. Rousselot, “Stability of reactively sputtered silver oxide films,” Surf. Coat. Tech.200(1-4), 276–279 (2005).
[CrossRef]

Other (1)

S. Ossicini, L. Pavesi, and F. Priolo, Light Emitting Silicon for Microphotonics (Springer, 2003).

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Figures (4)

Fig. 1
Fig. 1

The schematic diagram and FESEM of the SiNW/AgxO/AgND heterostructure device based on a silicon substrate. After nanopatterning using AgNPs-assisted wet chemical etching, AgNDs network was formed/precipitated atop in conjunction with SiNWs. The heterostructure was biased to investigate the electroluminescence phenomenon.

Fig. 2
Fig. 2

The I-V characterization of the SiNW/AgxO/AgND heterostructure device before and after electro-activation. The red thick line shows the activation process. When the voltage approached 40 V, the heterostructure was activated via passing through large current of 60 mA, followed with light emission from the heterostructure. After activation, the device entered light emitting region at a lower threshold voltage of 20 V.

Fig. 3
Fig. 3

The sequential CCD images of light illumination from the activated heterostructure device snapshotted with a time interval of 1s from (a) to (d). The device was biased at 30 V. Multicolored illumination spots were blinking with different frequencies. The colors primarily contain dark red, yellow to orange and green, etc.

Fig. 4
Fig. 4

(a) The EL spectra of the heterostructure device at bias voltages of 30, 40 and 50V. (b) Three major emission peaks from the spectrum at 50 V were fitted using Gaussian distribution, showing the wavelengths of 665 nm (dark red), 607 nm (yellow to orange) and 547 nm (green), respectively. These emission peaks correspond to the multicolored emission spots shown in Fig. 3.

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