Abstract

Transparent dielectric layers of typically 100 nm thickness can be delaminated from strongly absorbing, semiconducting substrates selectively and without noticeable damage at the opened surface by irradiation with fs laser pulses at photon energies above the semiconductor band gap. We have studied this very special ablation process on silicon wafers coated by SiO2, SixNy and Al2O3, using pulse durations from 50 fs to 2000 fs, and the laser wavelengths 1030, 800, 515, and 400 nm. By help of a precise determination of ablation thresholds and detailed inspection of ablation craters by optical and atomic force microscopy, we conclude that a very short penetration depth of the laser light due to charge carriers generated in the silicon by the pulse itself is the key for the quasi damage-free delamination process.

© 2011 OSA

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  1. B. N. Chichkov, C. Momma, S. Nolte, F. Alvensleben, and A. Tünnermann, “Femtosecond, picosecond and nanosecond laser ablation of solids,” Appl. Phys., A Mater. Sci. Process. 63(2), 109–115 (1996).
    [CrossRef]
  2. B. C. Stuart, M. D. Feit, A. M. Rubenchik, B. W. Shore, and M. D. Perry, “Laser-induced damage in dielectrics with nanosecond to subpicosecond pulses,” Phys. Rev. Lett. 74(12), 2248–2251 (1995).
    [CrossRef] [PubMed]
  3. D. Ashkenasi, G. Müller, A. Rosenfeld, R. Stoian, I. V. Hertel, N. M. Bulgakova, and E. E. B. Campbell, “Fundamentals and advantages of ultrafast micro-structuring of transparent materials,” Appl. Phys., A Mater. Sci. Process. 77, 223–228 (2003).
  4. E. N. Glezer and E. Mazur, “Ultrafast-laser driven micro-explosions in transparent materials,” Appl. Phys. Lett. 71(7), 882–884 (1997).
    [CrossRef]
  5. K. M. Davis, K. Miura, N. Sugimoto, and K. Hirao, “Writing waveguides in glass with a femtosecond laser,” Opt. Lett. 21(21), 1729–1731 (1996).
    [CrossRef] [PubMed]
  6. W. Yang, P. G. Kazansky, and Y. P. Svirko, “Non-reciprocal ultrafast laser writing,” Nat. Photonics 2(2), 99–104 (2008).
    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef] [PubMed]
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    [CrossRef] [PubMed]
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    [CrossRef] [PubMed]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]

2011 (2)

M. Miclea, U. Skrzypczak, F. Fankhauser, S. Faust, H. Graener, and G. Seifert, “Applanation-free femtosecond laser processing of the cornea,” Biomed. Opt. Express 2(3), 534–542 (2011).
[CrossRef] [PubMed]

T. Rublack, S. Hartnauer, P. Kappe, C. Swiatkowski, and G. Seifert, “Selective ablation of thin SiO2 layers on silicon substrates by femto- and picosecond laser pulses,” Appl. Phys., A Mater. Sci. Process. 103(1), 43–50 (2011).
[CrossRef]

2010 (2)

S. Hermann, N.-P. Harder, R. Brendel, D. Herzog, and H. Haferkamp, “Picosecond laser ablation of SiO2 layers on silicon substrates,” Appl. Phys., A Mater. Sci. Process. 99(1), 151–158 (2010).
[CrossRef]

A. Stalmashonak, C. Matyssek, O. Kiriyenko, W. Hergert, H. Graener, and G. Seifert, “Preparing large-aspect-ratio prolate metal nanoparticles in glass by simultaneous femtosecond multicolor irradiation,” Opt. Lett. 35(10), 1671–1673 (2010).
[CrossRef] [PubMed]

2008 (1)

W. Yang, P. G. Kazansky, and Y. P. Svirko, “Non-reciprocal ultrafast laser writing,” Nat. Photonics 2(2), 99–104 (2008).
[CrossRef]

2006 (1)

2003 (1)

D. Ashkenasi, G. Müller, A. Rosenfeld, R. Stoian, I. V. Hertel, N. M. Bulgakova, and E. E. B. Campbell, “Fundamentals and advantages of ultrafast micro-structuring of transparent materials,” Appl. Phys., A Mater. Sci. Process. 77, 223–228 (2003).

2002 (1)

U. K. Tirlapur and K. König, “Cell biology: targeted transfection by femtosecond laser,” Nature 418(6895), 290–291 (2002).
[CrossRef] [PubMed]

2000 (1)

K. Sokolowski-Tinten and D. von der Linde, “Generation of dense electron-hole plasmas in silicon,” Phys. Rev. B 61(4), 2643–2650 (2000).
[CrossRef]

1997 (1)

E. N. Glezer and E. Mazur, “Ultrafast-laser driven micro-explosions in transparent materials,” Appl. Phys. Lett. 71(7), 882–884 (1997).
[CrossRef]

1996 (2)

K. M. Davis, K. Miura, N. Sugimoto, and K. Hirao, “Writing waveguides in glass with a femtosecond laser,” Opt. Lett. 21(21), 1729–1731 (1996).
[CrossRef] [PubMed]

B. N. Chichkov, C. Momma, S. Nolte, F. Alvensleben, and A. Tünnermann, “Femtosecond, picosecond and nanosecond laser ablation of solids,” Appl. Phys., A Mater. Sci. Process. 63(2), 109–115 (1996).
[CrossRef]

1995 (2)

B. C. Stuart, M. D. Feit, A. M. Rubenchik, B. W. Shore, and M. D. Perry, “Laser-induced damage in dielectrics with nanosecond to subpicosecond pulses,” Phys. Rev. Lett. 74(12), 2248–2251 (1995).
[CrossRef] [PubMed]

M. A. Green and M. Keevers, “Optical properties of intrinsic silicon at 300 K,” Prog. Photovolt. Res. Appl. 3(3), 189–192 (1995).
[CrossRef]

1983 (1)

C. V. Shank, R. Yen, and C. Hirlimann, “Time-resolved reflectivity measurements of femtosecond optical-pulse-induced pase transitions in silicon,” Phys. Rev. Lett. 50(6), 454–457 (1983).
[CrossRef]

1982 (1)

Alvensleben, F.

B. N. Chichkov, C. Momma, S. Nolte, F. Alvensleben, and A. Tünnermann, “Femtosecond, picosecond and nanosecond laser ablation of solids,” Appl. Phys., A Mater. Sci. Process. 63(2), 109–115 (1996).
[CrossRef]

Ams, M.

Ashkenasi, D.

D. Ashkenasi, G. Müller, A. Rosenfeld, R. Stoian, I. V. Hertel, N. M. Bulgakova, and E. E. B. Campbell, “Fundamentals and advantages of ultrafast micro-structuring of transparent materials,” Appl. Phys., A Mater. Sci. Process. 77, 223–228 (2003).

Brendel, R.

S. Hermann, N.-P. Harder, R. Brendel, D. Herzog, and H. Haferkamp, “Picosecond laser ablation of SiO2 layers on silicon substrates,” Appl. Phys., A Mater. Sci. Process. 99(1), 151–158 (2010).
[CrossRef]

Bulgakova, N. M.

D. Ashkenasi, G. Müller, A. Rosenfeld, R. Stoian, I. V. Hertel, N. M. Bulgakova, and E. E. B. Campbell, “Fundamentals and advantages of ultrafast micro-structuring of transparent materials,” Appl. Phys., A Mater. Sci. Process. 77, 223–228 (2003).

Campbell, E. E. B.

D. Ashkenasi, G. Müller, A. Rosenfeld, R. Stoian, I. V. Hertel, N. M. Bulgakova, and E. E. B. Campbell, “Fundamentals and advantages of ultrafast micro-structuring of transparent materials,” Appl. Phys., A Mater. Sci. Process. 77, 223–228 (2003).

Chichkov, B. N.

B. N. Chichkov, C. Momma, S. Nolte, F. Alvensleben, and A. Tünnermann, “Femtosecond, picosecond and nanosecond laser ablation of solids,” Appl. Phys., A Mater. Sci. Process. 63(2), 109–115 (1996).
[CrossRef]

Davis, K. M.

Fankhauser, F.

Faust, S.

Feit, M. D.

B. C. Stuart, M. D. Feit, A. M. Rubenchik, B. W. Shore, and M. D. Perry, “Laser-induced damage in dielectrics with nanosecond to subpicosecond pulses,” Phys. Rev. Lett. 74(12), 2248–2251 (1995).
[CrossRef] [PubMed]

Glezer, E. N.

E. N. Glezer and E. Mazur, “Ultrafast-laser driven micro-explosions in transparent materials,” Appl. Phys. Lett. 71(7), 882–884 (1997).
[CrossRef]

Graener, H.

Green, M. A.

M. A. Green and M. Keevers, “Optical properties of intrinsic silicon at 300 K,” Prog. Photovolt. Res. Appl. 3(3), 189–192 (1995).
[CrossRef]

Haferkamp, H.

S. Hermann, N.-P. Harder, R. Brendel, D. Herzog, and H. Haferkamp, “Picosecond laser ablation of SiO2 layers on silicon substrates,” Appl. Phys., A Mater. Sci. Process. 99(1), 151–158 (2010).
[CrossRef]

Harder, N.-P.

S. Hermann, N.-P. Harder, R. Brendel, D. Herzog, and H. Haferkamp, “Picosecond laser ablation of SiO2 layers on silicon substrates,” Appl. Phys., A Mater. Sci. Process. 99(1), 151–158 (2010).
[CrossRef]

Hartnauer, S.

T. Rublack, S. Hartnauer, P. Kappe, C. Swiatkowski, and G. Seifert, “Selective ablation of thin SiO2 layers on silicon substrates by femto- and picosecond laser pulses,” Appl. Phys., A Mater. Sci. Process. 103(1), 43–50 (2011).
[CrossRef]

T. Rublack, M. Muchow, S. Hartnauer, and G. Seifert, “Laser ablation of silicon dioxide on silicon using femtosecond near infrared laser pulses,” Energy Procedia (to be published).

Hergert, W.

Hermann, S.

S. Hermann, N.-P. Harder, R. Brendel, D. Herzog, and H. Haferkamp, “Picosecond laser ablation of SiO2 layers on silicon substrates,” Appl. Phys., A Mater. Sci. Process. 99(1), 151–158 (2010).
[CrossRef]

Hertel, I. V.

D. Ashkenasi, G. Müller, A. Rosenfeld, R. Stoian, I. V. Hertel, N. M. Bulgakova, and E. E. B. Campbell, “Fundamentals and advantages of ultrafast micro-structuring of transparent materials,” Appl. Phys., A Mater. Sci. Process. 77, 223–228 (2003).

Herzog, D.

S. Hermann, N.-P. Harder, R. Brendel, D. Herzog, and H. Haferkamp, “Picosecond laser ablation of SiO2 layers on silicon substrates,” Appl. Phys., A Mater. Sci. Process. 99(1), 151–158 (2010).
[CrossRef]

Hirao, K.

Hirlimann, C.

C. V. Shank, R. Yen, and C. Hirlimann, “Time-resolved reflectivity measurements of femtosecond optical-pulse-induced pase transitions in silicon,” Phys. Rev. Lett. 50(6), 454–457 (1983).
[CrossRef]

Kappe, P.

T. Rublack, S. Hartnauer, P. Kappe, C. Swiatkowski, and G. Seifert, “Selective ablation of thin SiO2 layers on silicon substrates by femto- and picosecond laser pulses,” Appl. Phys., A Mater. Sci. Process. 103(1), 43–50 (2011).
[CrossRef]

Kazansky, P. G.

W. Yang, P. G. Kazansky, and Y. P. Svirko, “Non-reciprocal ultrafast laser writing,” Nat. Photonics 2(2), 99–104 (2008).
[CrossRef]

Keevers, M.

M. A. Green and M. Keevers, “Optical properties of intrinsic silicon at 300 K,” Prog. Photovolt. Res. Appl. 3(3), 189–192 (1995).
[CrossRef]

Kiriyenko, O.

König, K.

U. K. Tirlapur and K. König, “Cell biology: targeted transfection by femtosecond laser,” Nature 418(6895), 290–291 (2002).
[CrossRef] [PubMed]

Liu, J. M.

Marshall, G. D.

Matyssek, C.

Mazur, E.

E. N. Glezer and E. Mazur, “Ultrafast-laser driven micro-explosions in transparent materials,” Appl. Phys. Lett. 71(7), 882–884 (1997).
[CrossRef]

Miclea, M.

Miura, K.

Momma, C.

B. N. Chichkov, C. Momma, S. Nolte, F. Alvensleben, and A. Tünnermann, “Femtosecond, picosecond and nanosecond laser ablation of solids,” Appl. Phys., A Mater. Sci. Process. 63(2), 109–115 (1996).
[CrossRef]

Muchow, M.

T. Rublack, M. Muchow, S. Hartnauer, and G. Seifert, “Laser ablation of silicon dioxide on silicon using femtosecond near infrared laser pulses,” Energy Procedia (to be published).

Müller, G.

D. Ashkenasi, G. Müller, A. Rosenfeld, R. Stoian, I. V. Hertel, N. M. Bulgakova, and E. E. B. Campbell, “Fundamentals and advantages of ultrafast micro-structuring of transparent materials,” Appl. Phys., A Mater. Sci. Process. 77, 223–228 (2003).

Nolte, S.

B. N. Chichkov, C. Momma, S. Nolte, F. Alvensleben, and A. Tünnermann, “Femtosecond, picosecond and nanosecond laser ablation of solids,” Appl. Phys., A Mater. Sci. Process. 63(2), 109–115 (1996).
[CrossRef]

Perry, M. D.

B. C. Stuart, M. D. Feit, A. M. Rubenchik, B. W. Shore, and M. D. Perry, “Laser-induced damage in dielectrics with nanosecond to subpicosecond pulses,” Phys. Rev. Lett. 74(12), 2248–2251 (1995).
[CrossRef] [PubMed]

Rosenfeld, A.

D. Ashkenasi, G. Müller, A. Rosenfeld, R. Stoian, I. V. Hertel, N. M. Bulgakova, and E. E. B. Campbell, “Fundamentals and advantages of ultrafast micro-structuring of transparent materials,” Appl. Phys., A Mater. Sci. Process. 77, 223–228 (2003).

Rubenchik, A. M.

B. C. Stuart, M. D. Feit, A. M. Rubenchik, B. W. Shore, and M. D. Perry, “Laser-induced damage in dielectrics with nanosecond to subpicosecond pulses,” Phys. Rev. Lett. 74(12), 2248–2251 (1995).
[CrossRef] [PubMed]

Rublack, T.

T. Rublack, S. Hartnauer, P. Kappe, C. Swiatkowski, and G. Seifert, “Selective ablation of thin SiO2 layers on silicon substrates by femto- and picosecond laser pulses,” Appl. Phys., A Mater. Sci. Process. 103(1), 43–50 (2011).
[CrossRef]

T. Rublack, M. Muchow, S. Hartnauer, and G. Seifert, “Laser ablation of silicon dioxide on silicon using femtosecond near infrared laser pulses,” Energy Procedia (to be published).

Seifert, G.

T. Rublack, S. Hartnauer, P. Kappe, C. Swiatkowski, and G. Seifert, “Selective ablation of thin SiO2 layers on silicon substrates by femto- and picosecond laser pulses,” Appl. Phys., A Mater. Sci. Process. 103(1), 43–50 (2011).
[CrossRef]

M. Miclea, U. Skrzypczak, F. Fankhauser, S. Faust, H. Graener, and G. Seifert, “Applanation-free femtosecond laser processing of the cornea,” Biomed. Opt. Express 2(3), 534–542 (2011).
[CrossRef] [PubMed]

A. Stalmashonak, C. Matyssek, O. Kiriyenko, W. Hergert, H. Graener, and G. Seifert, “Preparing large-aspect-ratio prolate metal nanoparticles in glass by simultaneous femtosecond multicolor irradiation,” Opt. Lett. 35(10), 1671–1673 (2010).
[CrossRef] [PubMed]

T. Rublack, M. Muchow, S. Hartnauer, and G. Seifert, “Laser ablation of silicon dioxide on silicon using femtosecond near infrared laser pulses,” Energy Procedia (to be published).

Shank, C. V.

C. V. Shank, R. Yen, and C. Hirlimann, “Time-resolved reflectivity measurements of femtosecond optical-pulse-induced pase transitions in silicon,” Phys. Rev. Lett. 50(6), 454–457 (1983).
[CrossRef]

Shore, B. W.

B. C. Stuart, M. D. Feit, A. M. Rubenchik, B. W. Shore, and M. D. Perry, “Laser-induced damage in dielectrics with nanosecond to subpicosecond pulses,” Phys. Rev. Lett. 74(12), 2248–2251 (1995).
[CrossRef] [PubMed]

Skrzypczak, U.

Sokolowski-Tinten, K.

K. Sokolowski-Tinten and D. von der Linde, “Generation of dense electron-hole plasmas in silicon,” Phys. Rev. B 61(4), 2643–2650 (2000).
[CrossRef]

Stalmashonak, A.

Stoian, R.

D. Ashkenasi, G. Müller, A. Rosenfeld, R. Stoian, I. V. Hertel, N. M. Bulgakova, and E. E. B. Campbell, “Fundamentals and advantages of ultrafast micro-structuring of transparent materials,” Appl. Phys., A Mater. Sci. Process. 77, 223–228 (2003).

Stuart, B. C.

B. C. Stuart, M. D. Feit, A. M. Rubenchik, B. W. Shore, and M. D. Perry, “Laser-induced damage in dielectrics with nanosecond to subpicosecond pulses,” Phys. Rev. Lett. 74(12), 2248–2251 (1995).
[CrossRef] [PubMed]

Sugimoto, N.

Svirko, Y. P.

W. Yang, P. G. Kazansky, and Y. P. Svirko, “Non-reciprocal ultrafast laser writing,” Nat. Photonics 2(2), 99–104 (2008).
[CrossRef]

Swiatkowski, C.

T. Rublack, S. Hartnauer, P. Kappe, C. Swiatkowski, and G. Seifert, “Selective ablation of thin SiO2 layers on silicon substrates by femto- and picosecond laser pulses,” Appl. Phys., A Mater. Sci. Process. 103(1), 43–50 (2011).
[CrossRef]

Tirlapur, U. K.

U. K. Tirlapur and K. König, “Cell biology: targeted transfection by femtosecond laser,” Nature 418(6895), 290–291 (2002).
[CrossRef] [PubMed]

Tünnermann, A.

B. N. Chichkov, C. Momma, S. Nolte, F. Alvensleben, and A. Tünnermann, “Femtosecond, picosecond and nanosecond laser ablation of solids,” Appl. Phys., A Mater. Sci. Process. 63(2), 109–115 (1996).
[CrossRef]

von der Linde, D.

K. Sokolowski-Tinten and D. von der Linde, “Generation of dense electron-hole plasmas in silicon,” Phys. Rev. B 61(4), 2643–2650 (2000).
[CrossRef]

Withford, M. J.

Yang, W.

W. Yang, P. G. Kazansky, and Y. P. Svirko, “Non-reciprocal ultrafast laser writing,” Nat. Photonics 2(2), 99–104 (2008).
[CrossRef]

Yen, R.

C. V. Shank, R. Yen, and C. Hirlimann, “Time-resolved reflectivity measurements of femtosecond optical-pulse-induced pase transitions in silicon,” Phys. Rev. Lett. 50(6), 454–457 (1983).
[CrossRef]

Appl. Phys. Lett. (1)

E. N. Glezer and E. Mazur, “Ultrafast-laser driven micro-explosions in transparent materials,” Appl. Phys. Lett. 71(7), 882–884 (1997).
[CrossRef]

Appl. Phys., A Mater. Sci. Process. (4)

B. N. Chichkov, C. Momma, S. Nolte, F. Alvensleben, and A. Tünnermann, “Femtosecond, picosecond and nanosecond laser ablation of solids,” Appl. Phys., A Mater. Sci. Process. 63(2), 109–115 (1996).
[CrossRef]

D. Ashkenasi, G. Müller, A. Rosenfeld, R. Stoian, I. V. Hertel, N. M. Bulgakova, and E. E. B. Campbell, “Fundamentals and advantages of ultrafast micro-structuring of transparent materials,” Appl. Phys., A Mater. Sci. Process. 77, 223–228 (2003).

T. Rublack, S. Hartnauer, P. Kappe, C. Swiatkowski, and G. Seifert, “Selective ablation of thin SiO2 layers on silicon substrates by femto- and picosecond laser pulses,” Appl. Phys., A Mater. Sci. Process. 103(1), 43–50 (2011).
[CrossRef]

S. Hermann, N.-P. Harder, R. Brendel, D. Herzog, and H. Haferkamp, “Picosecond laser ablation of SiO2 layers on silicon substrates,” Appl. Phys., A Mater. Sci. Process. 99(1), 151–158 (2010).
[CrossRef]

Biomed. Opt. Express (1)

Energy Procedia (1)

T. Rublack, M. Muchow, S. Hartnauer, and G. Seifert, “Laser ablation of silicon dioxide on silicon using femtosecond near infrared laser pulses,” Energy Procedia (to be published).

Nat. Photonics (1)

W. Yang, P. G. Kazansky, and Y. P. Svirko, “Non-reciprocal ultrafast laser writing,” Nat. Photonics 2(2), 99–104 (2008).
[CrossRef]

Nature (1)

U. K. Tirlapur and K. König, “Cell biology: targeted transfection by femtosecond laser,” Nature 418(6895), 290–291 (2002).
[CrossRef] [PubMed]

Opt. Lett. (4)

Phys. Rev. B (1)

K. Sokolowski-Tinten and D. von der Linde, “Generation of dense electron-hole plasmas in silicon,” Phys. Rev. B 61(4), 2643–2650 (2000).
[CrossRef]

Phys. Rev. Lett. (2)

C. V. Shank, R. Yen, and C. Hirlimann, “Time-resolved reflectivity measurements of femtosecond optical-pulse-induced pase transitions in silicon,” Phys. Rev. Lett. 50(6), 454–457 (1983).
[CrossRef]

B. C. Stuart, M. D. Feit, A. M. Rubenchik, B. W. Shore, and M. D. Perry, “Laser-induced damage in dielectrics with nanosecond to subpicosecond pulses,” Phys. Rev. Lett. 74(12), 2248–2251 (1995).
[CrossRef] [PubMed]

Prog. Photovolt. Res. Appl. (1)

M. A. Green and M. Keevers, “Optical properties of intrinsic silicon at 300 K,” Prog. Photovolt. Res. Appl. 3(3), 189–192 (1995).
[CrossRef]

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Figures (5)

Fig. 1
Fig. 1

Fluence profile of a Gaussian beam with beam radius ω0 at Φ0/e2. At local fluence above the melting threshold fluence only a change of colour (reflectivity) can be seen (a); fluences above the breaking threshold lead to delamination of the dielectric layer (b), at sufficiently high excess energy finally to ablation of the transparent layer (c).

Fig. 2
Fig. 2

Microscope image (left) and AFM cross section (right) of ablation crater after one 515 nm, 270 fs pulse.

Fig. 3
Fig. 3

Dependence of ablation and corona diameters versus laser pulse energy for (a) SiO2 and (b) Si x N y thin films on Si; solid lines represent least mean squares fits to the data based on Eq. (1).

Fig. 4
Fig. 4

Microscope image of Al2O3 coated Si wafer, showing two ablation craters (close to bottom of image) and an almost undamaged, ablated disk of the delaminated thin film (marked by orange arrow).

Fig. 5
Fig. 5

Double signet of Martin-Luther-University Halle-Wittenberg, prepared by selective delamination of Al2O3 from Si wafer.

Tables (1)

Tables Icon

Table 1 Overview of Melting, Ablation and Damage Thresholds Obtained for Irradiation of Three Different Transparent Dielectrics with Different Laser Parameters

Equations (1)

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D 2 ( m , b ) = 2 ω 0 2 ln ( 2 E p u l s e π ω 0 2 Φ t h , ( m , b ) ) .

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