Abstract

Heterogeneous integration of InP devices to Si substrates by adhesive-less micro transfer printing requires flat surfaces for optimum attachment and thermal sinking. InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP coupons by FeCl3:H2O (1:2). InAlAs offers isotropic etches and superior selectivity (> 4,000) to InP when compared with InGaAs. A 500 nm thick InAlAs sacrificial layer allows the release of wide coupons with a surface roughness < 2 nm and a flatness < 20 nm. The InAlAs release technology is applied to the transfer printing of a pre-fabricated InP laser to a Si substrate.

© 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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  1. E. Menard, K. Lee, Y. Khang, R. Nuzzo, and J. Rogers, “A printable form of silicon for high performance thin film transistors on plastic substrates,” Appl. Phys. Lett. 84, 5398–5400 (2004).
  2. M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5, 33–38 (2006).
  3. A. Carlson, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication,” Adv. Mater. 24(39), 5284–5318 (2012).
    [PubMed]
  4. J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbett, “Wafer-scale integration of group III-V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6, 610–614 (2012).
  5. J. Yoon, S. M. Lee, D. Kang, M. A. Meitl, C. A. Bower, and J. Rogers, “Heterogeneously Integrated Optoelectronic Devices Enabled by MicroTransfer Printing,” Advanced Optical Materials 3, 1313–1335 (2015).
  6. C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).
  7. J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,”, Appl. Phys. Lett. 110, 173503 (2017).
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  13. A. De Groote, P. Cardile, A. Z. Subramanian, A. M. Fecioru, C. Bower, D. Delbeke, R. Baets, and G. Roelkens, “Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters,” Opt. Express 24(13), 13754–13762 (2016).
    [PubMed]
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  15. C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
    [PubMed]
  16. A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, and E. Pelucchi, “Unusual nanostructures of “lattice matched” InP on AlInAs,” Appl. Phys. Lett. 104, 141606 (2014).
  17. E. E. Mura, A. Gocalinska, G. Juska, S. T. Moroni, A. Pescaglini, and E. Pelucchi, “Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop,”,” Appl. Phys. Lett. 110, 113101 (2017).
  18. T. Kusserow, S. Ferwana, T. Nakamura, T. Hayakawa, N. Dharmarasu, B. Vengatesan, and H. Hillmer, “Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices,” Proc. SPIE 6993, 69930B (2008).

2017 (3)

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,”, Appl. Phys. Lett. 110, 173503 (2017).

E. E. Mura, A. Gocalinska, G. Juska, S. T. Moroni, A. Pescaglini, and E. Pelucchi, “Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop,”,” Appl. Phys. Lett. 110, 113101 (2017).

2016 (2)

A. De Groote, P. Cardile, A. Z. Subramanian, A. M. Fecioru, C. Bower, D. Delbeke, R. Baets, and G. Roelkens, “Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters,” Opt. Express 24(13), 13754–13762 (2016).
[PubMed]

R. Loi, J. O’Callaghan, B. Roycroft, C. Robert, A. Fecioru, A. J. Trindade, A. Gocalinska, E. Pelucchi, C. A. Bower, and B. Corbett, “Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates,” IEEE Photonics J. 8, 1504810 (2016).

2015 (3)

X. Sheng, C. Robert, S. Wang, G. Pakeltis, B. Corbett, and J. A. Rogers, “Transfer printing of fully formed thin film micro scale GaAs lasers on silicon with a thermally conductive interface material,” Laser Photonics Rev. 9, L17–L22 (2015).

J. Yoon, S. M. Lee, D. Kang, M. A. Meitl, C. A. Bower, and J. Rogers, “Heterogeneously Integrated Optoelectronic Devices Enabled by MicroTransfer Printing,” Advanced Optical Materials 3, 1313–1335 (2015).

A. J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J. J. D. McKendry, D. Zhu, N. Laurand, E. Gu, D. J. Wallis, I. M. Watson, C. J. Humphreys, and M. D. Dawson, “Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing,” Opt. Express 23(7), 9329–9338 (2015).
[PubMed]

2014 (1)

A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, and E. Pelucchi, “Unusual nanostructures of “lattice matched” InP on AlInAs,” Appl. Phys. Lett. 104, 141606 (2014).

2013 (1)

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[PubMed]

2012 (3)

H. Yang, D. Zhao, S. Chuwongin, J. H. Seo, W. Yang, Y. Shuai, J. Berggren, M. Hammar, Z. Ma, and W. Zhou, “Transfer printing stacked nanomembrane lasers on silicon,” Nat. Photonics 6, 617–622 (2012).

A. Carlson, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication,” Adv. Mater. 24(39), 5284–5318 (2012).
[PubMed]

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbett, “Wafer-scale integration of group III-V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6, 610–614 (2012).

2009 (1)

T. H. Kim, A. Carlson, J. H. Ahn, S. M. Won, S. Wang, Y. Huang, and J. A. Rogers, “Kinetically controlled, adhesiveless transfer printing using microstructured stamps,” Appl. Phys. Lett. 94, 113502 (2009).

2008 (1)

T. Kusserow, S. Ferwana, T. Nakamura, T. Hayakawa, N. Dharmarasu, B. Vengatesan, and H. Hillmer, “Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices,” Proc. SPIE 6993, 69930B (2008).

2006 (1)

M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5, 33–38 (2006).

2004 (1)

E. Menard, K. Lee, Y. Khang, R. Nuzzo, and J. Rogers, “A printable form of silicon for high performance thin film transistors on plastic substrates,” Appl. Phys. Lett. 84, 5398–5400 (2004).

Adesida, I.

M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5, 33–38 (2006).

Ahn, J. H.

T. H. Kim, A. Carlson, J. H. Ahn, S. M. Won, S. Wang, Y. Huang, and J. A. Rogers, “Kinetically controlled, adhesiveless transfer printing using microstructured stamps,” Appl. Phys. Lett. 94, 113502 (2009).

Allen, N.

J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,”, Appl. Phys. Lett. 110, 173503 (2017).

Baets, R.

Beam, E.

J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,”, Appl. Phys. Lett. 110, 173503 (2017).

Berggren, J.

H. Yang, D. Zhao, S. Chuwongin, J. H. Seo, W. Yang, Y. Shuai, J. Berggren, M. Hammar, Z. Ma, and W. Zhou, “Transfer printing stacked nanomembrane lasers on silicon,” Nat. Photonics 6, 617–622 (2012).

Bonafede, S.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

Bowen, A. M.

A. Carlson, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication,” Adv. Mater. 24(39), 5284–5318 (2012).
[PubMed]

Bower, C.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

A. De Groote, P. Cardile, A. Z. Subramanian, A. M. Fecioru, C. Bower, D. Delbeke, R. Baets, and G. Roelkens, “Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters,” Opt. Express 24(13), 13754–13762 (2016).
[PubMed]

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbett, “Wafer-scale integration of group III-V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6, 610–614 (2012).

Bower, C. A.

R. Loi, J. O’Callaghan, B. Roycroft, C. Robert, A. Fecioru, A. J. Trindade, A. Gocalinska, E. Pelucchi, C. A. Bower, and B. Corbett, “Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates,” IEEE Photonics J. 8, 1504810 (2016).

J. Yoon, S. M. Lee, D. Kang, M. A. Meitl, C. A. Bower, and J. Rogers, “Heterogeneously Integrated Optoelectronic Devices Enabled by MicroTransfer Printing,” Advanced Optical Materials 3, 1313–1335 (2015).

Cardile, P.

Carlson, A.

A. Carlson, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication,” Adv. Mater. 24(39), 5284–5318 (2012).
[PubMed]

T. H. Kim, A. Carlson, J. H. Ahn, S. M. Won, S. Wang, Y. Huang, and J. A. Rogers, “Kinetically controlled, adhesiveless transfer printing using microstructured stamps,” Appl. Phys. Lett. 94, 113502 (2009).

Cheng, C. W.

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[PubMed]

Chuwongin, S.

H. Yang, D. Zhao, S. Chuwongin, J. H. Seo, W. Yang, Y. Shuai, J. Berggren, M. Hammar, Z. Ma, and W. Zhou, “Transfer printing stacked nanomembrane lasers on silicon,” Nat. Photonics 6, 617–622 (2012).

Cok, R.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

Corbett, B.

R. Loi, J. O’Callaghan, B. Roycroft, C. Robert, A. Fecioru, A. J. Trindade, A. Gocalinska, E. Pelucchi, C. A. Bower, and B. Corbett, “Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates,” IEEE Photonics J. 8, 1504810 (2016).

X. Sheng, C. Robert, S. Wang, G. Pakeltis, B. Corbett, and J. A. Rogers, “Transfer printing of fully formed thin film micro scale GaAs lasers on silicon with a thermally conductive interface material,” Laser Photonics Rev. 9, L17–L22 (2015).

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbett, “Wafer-scale integration of group III-V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6, 610–614 (2012).

Dawson, M. D.

De Groote, A.

Delbeke, D.

Dharmarasu, N.

T. Kusserow, S. Ferwana, T. Nakamura, T. Hayakawa, N. Dharmarasu, B. Vengatesan, and H. Hillmer, “Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices,” Proc. SPIE 6993, 69930B (2008).

Dimastrodonato, V.

A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, and E. Pelucchi, “Unusual nanostructures of “lattice matched” InP on AlInAs,” Appl. Phys. Lett. 104, 141606 (2014).

Fay, P.

J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,”, Appl. Phys. Lett. 110, 173503 (2017).

Fecioru, A.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

R. Loi, J. O’Callaghan, B. Roycroft, C. Robert, A. Fecioru, A. J. Trindade, A. Gocalinska, E. Pelucchi, C. A. Bower, and B. Corbett, “Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates,” IEEE Photonics J. 8, 1504810 (2016).

Fecioru, A. M.

Feng, X.

M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5, 33–38 (2006).

Ferreira, R.

Ferwana, S.

T. Kusserow, S. Ferwana, T. Nakamura, T. Hayakawa, N. Dharmarasu, B. Vengatesan, and H. Hillmer, “Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices,” Proc. SPIE 6993, 69930B (2008).

Fisher, B.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

Gocalinska, A.

E. E. Mura, A. Gocalinska, G. Juska, S. T. Moroni, A. Pescaglini, and E. Pelucchi, “Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop,”,” Appl. Phys. Lett. 110, 113101 (2017).

R. Loi, J. O’Callaghan, B. Roycroft, C. Robert, A. Fecioru, A. J. Trindade, A. Gocalinska, E. Pelucchi, C. A. Bower, and B. Corbett, “Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates,” IEEE Photonics J. 8, 1504810 (2016).

A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, and E. Pelucchi, “Unusual nanostructures of “lattice matched” InP on AlInAs,” Appl. Phys. Lett. 104, 141606 (2014).

Gomez, D.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

Gu, E.

Gubbins, M. A.

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbett, “Wafer-scale integration of group III-V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6, 610–614 (2012).

Guido, L.

J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,”, Appl. Phys. Lett. 110, 173503 (2017).

Guilhabert, B.

Hammar, M.

H. Yang, D. Zhao, S. Chuwongin, J. H. Seo, W. Yang, Y. Shuai, J. Berggren, M. Hammar, Z. Ma, and W. Zhou, “Transfer printing stacked nanomembrane lasers on silicon,” Nat. Photonics 6, 617–622 (2012).

Han, S. J.

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[PubMed]

Hayakawa, T.

T. Kusserow, S. Ferwana, T. Nakamura, T. Hayakawa, N. Dharmarasu, B. Vengatesan, and H. Hillmer, “Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices,” Proc. SPIE 6993, 69930B (2008).

Hillmer, H.

T. Kusserow, S. Ferwana, T. Nakamura, T. Hayakawa, N. Dharmarasu, B. Vengatesan, and H. Hillmer, “Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices,” Proc. SPIE 6993, 69930B (2008).

Huang, Y.

A. Carlson, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication,” Adv. Mater. 24(39), 5284–5318 (2012).
[PubMed]

T. H. Kim, A. Carlson, J. H. Ahn, S. M. Won, S. Wang, Y. Huang, and J. A. Rogers, “Kinetically controlled, adhesiveless transfer printing using microstructured stamps,” Appl. Phys. Lett. 94, 113502 (2009).

Huang, Y. Y.

M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5, 33–38 (2006).

Humphreys, C. J.

Joyce, B. A.

A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, and E. Pelucchi, “Unusual nanostructures of “lattice matched” InP on AlInAs,” Appl. Phys. Lett. 104, 141606 (2014).

Juska, G.

E. E. Mura, A. Gocalinska, G. Juska, S. T. Moroni, A. Pescaglini, and E. Pelucchi, “Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop,”,” Appl. Phys. Lett. 110, 113101 (2017).

A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, and E. Pelucchi, “Unusual nanostructures of “lattice matched” InP on AlInAs,” Appl. Phys. Lett. 104, 141606 (2014).

Justice, J.

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbett, “Wafer-scale integration of group III-V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6, 610–614 (2012).

Kang, D.

J. Yoon, S. M. Lee, D. Kang, M. A. Meitl, C. A. Bower, and J. Rogers, “Heterogeneously Integrated Optoelectronic Devices Enabled by MicroTransfer Printing,” Advanced Optical Materials 3, 1313–1335 (2015).

Khang, Y.

E. Menard, K. Lee, Y. Khang, R. Nuzzo, and J. Rogers, “A printable form of silicon for high performance thin film transistors on plastic substrates,” Appl. Phys. Lett. 84, 5398–5400 (2004).

Kim, T. H.

T. H. Kim, A. Carlson, J. H. Ahn, S. M. Won, S. Wang, Y. Huang, and J. A. Rogers, “Kinetically controlled, adhesiveless transfer printing using microstructured stamps,” Appl. Phys. Lett. 94, 113502 (2009).

Kumar, V.

M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5, 33–38 (2006).

Kusserow, T.

T. Kusserow, S. Ferwana, T. Nakamura, T. Hayakawa, N. Dharmarasu, B. Vengatesan, and H. Hillmer, “Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices,” Proc. SPIE 6993, 69930B (2008).

Laurand, N.

Lee, K.

E. Menard, K. Lee, Y. Khang, R. Nuzzo, and J. Rogers, “A printable form of silicon for high performance thin film transistors on plastic substrates,” Appl. Phys. Lett. 84, 5398–5400 (2004).

Lee, K. J.

M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5, 33–38 (2006).

Lee, S. M.

J. Yoon, S. M. Lee, D. Kang, M. A. Meitl, C. A. Bower, and J. Rogers, “Heterogeneously Integrated Optoelectronic Devices Enabled by MicroTransfer Printing,” Advanced Optical Materials 3, 1313–1335 (2015).

Li, N.

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[PubMed]

Loi, R.

R. Loi, J. O’Callaghan, B. Roycroft, C. Robert, A. Fecioru, A. J. Trindade, A. Gocalinska, E. Pelucchi, C. A. Bower, and B. Corbett, “Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates,” IEEE Photonics J. 8, 1504810 (2016).

Ma, Z.

H. Yang, D. Zhao, S. Chuwongin, J. H. Seo, W. Yang, Y. Shuai, J. Berggren, M. Hammar, Z. Ma, and W. Zhou, “Transfer printing stacked nanomembrane lasers on silicon,” Nat. Photonics 6, 617–622 (2012).

Manganaro, M.

A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, and E. Pelucchi, “Unusual nanostructures of “lattice matched” InP on AlInAs,” Appl. Phys. Lett. 104, 141606 (2014).

McCarthy, R.

J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,”, Appl. Phys. Lett. 110, 173503 (2017).

McKendry, J. J. D.

Meitl, M.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbett, “Wafer-scale integration of group III-V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6, 610–614 (2012).

Meitl, M. A.

J. Yoon, S. M. Lee, D. Kang, M. A. Meitl, C. A. Bower, and J. Rogers, “Heterogeneously Integrated Optoelectronic Devices Enabled by MicroTransfer Printing,” Advanced Optical Materials 3, 1313–1335 (2015).

M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5, 33–38 (2006).

Melnik, G.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

Menard, E.

E. Menard, K. Lee, Y. Khang, R. Nuzzo, and J. Rogers, “A printable form of silicon for high performance thin film transistors on plastic substrates,” Appl. Phys. Lett. 84, 5398–5400 (2004).

Mooney, M. B.

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbett, “Wafer-scale integration of group III-V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6, 610–614 (2012).

Moore, T.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

Moroni, S. T.

E. E. Mura, A. Gocalinska, G. Juska, S. T. Moroni, A. Pescaglini, and E. Pelucchi, “Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop,”,” Appl. Phys. Lett. 110, 113101 (2017).

Mura, E. E.

E. E. Mura, A. Gocalinska, G. Juska, S. T. Moroni, A. Pescaglini, and E. Pelucchi, “Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop,”,” Appl. Phys. Lett. 110, 113101 (2017).

Nakamura, T.

T. Kusserow, S. Ferwana, T. Nakamura, T. Hayakawa, N. Dharmarasu, B. Vengatesan, and H. Hillmer, “Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices,” Proc. SPIE 6993, 69930B (2008).

Nuzzo, R.

E. Menard, K. Lee, Y. Khang, R. Nuzzo, and J. Rogers, “A printable form of silicon for high performance thin film transistors on plastic substrates,” Appl. Phys. Lett. 84, 5398–5400 (2004).

Nuzzo, R. G.

A. Carlson, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication,” Adv. Mater. 24(39), 5284–5318 (2012).
[PubMed]

M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5, 33–38 (2006).

O’Callaghan, J.

R. Loi, J. O’Callaghan, B. Roycroft, C. Robert, A. Fecioru, A. J. Trindade, A. Gocalinska, E. Pelucchi, C. A. Bower, and B. Corbett, “Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates,” IEEE Photonics J. 8, 1504810 (2016).

Pakeltis, G.

X. Sheng, C. Robert, S. Wang, G. Pakeltis, B. Corbett, and J. A. Rogers, “Transfer printing of fully formed thin film micro scale GaAs lasers on silicon with a thermally conductive interface material,” Laser Photonics Rev. 9, L17–L22 (2015).

Pelucchi, E.

E. E. Mura, A. Gocalinska, G. Juska, S. T. Moroni, A. Pescaglini, and E. Pelucchi, “Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop,”,” Appl. Phys. Lett. 110, 113101 (2017).

R. Loi, J. O’Callaghan, B. Roycroft, C. Robert, A. Fecioru, A. J. Trindade, A. Gocalinska, E. Pelucchi, C. A. Bower, and B. Corbett, “Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates,” IEEE Photonics J. 8, 1504810 (2016).

A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, and E. Pelucchi, “Unusual nanostructures of “lattice matched” InP on AlInAs,” Appl. Phys. Lett. 104, 141606 (2014).

Pescaglini, A.

E. E. Mura, A. Gocalinska, G. Juska, S. T. Moroni, A. Pescaglini, and E. Pelucchi, “Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop,”,” Appl. Phys. Lett. 110, 113101 (2017).

Prevatte, C.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

Radauscher, E.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

Raymond, B.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

Reddy, R.

J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,”, Appl. Phys. Lett. 110, 173503 (2017).

Robert, C.

R. Loi, J. O’Callaghan, B. Roycroft, C. Robert, A. Fecioru, A. J. Trindade, A. Gocalinska, E. Pelucchi, C. A. Bower, and B. Corbett, “Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates,” IEEE Photonics J. 8, 1504810 (2016).

X. Sheng, C. Robert, S. Wang, G. Pakeltis, B. Corbett, and J. A. Rogers, “Transfer printing of fully formed thin film micro scale GaAs lasers on silicon with a thermally conductive interface material,” Laser Photonics Rev. 9, L17–L22 (2015).

Roelkens, G.

Rogers, J.

J. Yoon, S. M. Lee, D. Kang, M. A. Meitl, C. A. Bower, and J. Rogers, “Heterogeneously Integrated Optoelectronic Devices Enabled by MicroTransfer Printing,” Advanced Optical Materials 3, 1313–1335 (2015).

E. Menard, K. Lee, Y. Khang, R. Nuzzo, and J. Rogers, “A printable form of silicon for high performance thin film transistors on plastic substrates,” Appl. Phys. Lett. 84, 5398–5400 (2004).

Rogers, J. A.

X. Sheng, C. Robert, S. Wang, G. Pakeltis, B. Corbett, and J. A. Rogers, “Transfer printing of fully formed thin film micro scale GaAs lasers on silicon with a thermally conductive interface material,” Laser Photonics Rev. 9, L17–L22 (2015).

A. Carlson, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication,” Adv. Mater. 24(39), 5284–5318 (2012).
[PubMed]

T. H. Kim, A. Carlson, J. H. Ahn, S. M. Won, S. Wang, Y. Huang, and J. A. Rogers, “Kinetically controlled, adhesiveless transfer printing using microstructured stamps,” Appl. Phys. Lett. 94, 113502 (2009).

M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5, 33–38 (2006).

Rotzoll, R.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

Roycroft, B.

R. Loi, J. O’Callaghan, B. Roycroft, C. Robert, A. Fecioru, A. J. Trindade, A. Gocalinska, E. Pelucchi, C. A. Bower, and B. Corbett, “Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates,” IEEE Photonics J. 8, 1504810 (2016).

Sadana, D. K.

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[PubMed]

Seo, J. H.

H. Yang, D. Zhao, S. Chuwongin, J. H. Seo, W. Yang, Y. Shuai, J. Berggren, M. Hammar, Z. Ma, and W. Zhou, “Transfer printing stacked nanomembrane lasers on silicon,” Nat. Photonics 6, 617–622 (2012).

Sheng, X.

X. Sheng, C. Robert, S. Wang, G. Pakeltis, B. Corbett, and J. A. Rogers, “Transfer printing of fully formed thin film micro scale GaAs lasers on silicon with a thermally conductive interface material,” Laser Photonics Rev. 9, L17–L22 (2015).

Shi, L.

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[PubMed]

Shiu, K. T.

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[PubMed]

Shuai, Y.

H. Yang, D. Zhao, S. Chuwongin, J. H. Seo, W. Yang, Y. Shuai, J. Berggren, M. Hammar, Z. Ma, and W. Zhou, “Transfer printing stacked nanomembrane lasers on silicon,” Nat. Photonics 6, 617–622 (2012).

Subramanian, A. Z.

Thomas, K.

A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, and E. Pelucchi, “Unusual nanostructures of “lattice matched” InP on AlInAs,” Appl. Phys. Lett. 104, 141606 (2014).

Trindade, A.

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

Trindade, A. J.

R. Loi, J. O’Callaghan, B. Roycroft, C. Robert, A. Fecioru, A. J. Trindade, A. Gocalinska, E. Pelucchi, C. A. Bower, and B. Corbett, “Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates,” IEEE Photonics J. 8, 1504810 (2016).

A. J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J. J. D. McKendry, D. Zhu, N. Laurand, E. Gu, D. J. Wallis, I. M. Watson, C. J. Humphreys, and M. D. Dawson, “Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing,” Opt. Express 23(7), 9329–9338 (2015).
[PubMed]

Vengatesan, B.

T. Kusserow, S. Ferwana, T. Nakamura, T. Hayakawa, N. Dharmarasu, B. Vengatesan, and H. Hillmer, “Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices,” Proc. SPIE 6993, 69930B (2008).

Vvedensky, D. D.

A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, and E. Pelucchi, “Unusual nanostructures of “lattice matched” InP on AlInAs,” Appl. Phys. Lett. 104, 141606 (2014).

Wallis, D. J.

Wang, J.

J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,”, Appl. Phys. Lett. 110, 173503 (2017).

Wang, S.

X. Sheng, C. Robert, S. Wang, G. Pakeltis, B. Corbett, and J. A. Rogers, “Transfer printing of fully formed thin film micro scale GaAs lasers on silicon with a thermally conductive interface material,” Laser Photonics Rev. 9, L17–L22 (2015).

T. H. Kim, A. Carlson, J. H. Ahn, S. M. Won, S. Wang, Y. Huang, and J. A. Rogers, “Kinetically controlled, adhesiveless transfer printing using microstructured stamps,” Appl. Phys. Lett. 94, 113502 (2009).

Watson, I. M.

Won, S. M.

T. H. Kim, A. Carlson, J. H. Ahn, S. M. Won, S. Wang, Y. Huang, and J. A. Rogers, “Kinetically controlled, adhesiveless transfer printing using microstructured stamps,” Appl. Phys. Lett. 94, 113502 (2009).

Xie, E. Y.

Xie, J.

J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,”, Appl. Phys. Lett. 110, 173503 (2017).

Yang, H.

H. Yang, D. Zhao, S. Chuwongin, J. H. Seo, W. Yang, Y. Shuai, J. Berggren, M. Hammar, Z. Ma, and W. Zhou, “Transfer printing stacked nanomembrane lasers on silicon,” Nat. Photonics 6, 617–622 (2012).

Yang, W.

H. Yang, D. Zhao, S. Chuwongin, J. H. Seo, W. Yang, Y. Shuai, J. Berggren, M. Hammar, Z. Ma, and W. Zhou, “Transfer printing stacked nanomembrane lasers on silicon,” Nat. Photonics 6, 617–622 (2012).

Yoon, J.

J. Yoon, S. M. Lee, D. Kang, M. A. Meitl, C. A. Bower, and J. Rogers, “Heterogeneously Integrated Optoelectronic Devices Enabled by MicroTransfer Printing,” Advanced Optical Materials 3, 1313–1335 (2015).

Youtsey, C.

J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,”, Appl. Phys. Lett. 110, 173503 (2017).

Zhang, J.

A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, and E. Pelucchi, “Unusual nanostructures of “lattice matched” InP on AlInAs,” Appl. Phys. Lett. 104, 141606 (2014).

Zhao, D.

H. Yang, D. Zhao, S. Chuwongin, J. H. Seo, W. Yang, Y. Shuai, J. Berggren, M. Hammar, Z. Ma, and W. Zhou, “Transfer printing stacked nanomembrane lasers on silicon,” Nat. Photonics 6, 617–622 (2012).

Zhou, W.

H. Yang, D. Zhao, S. Chuwongin, J. H. Seo, W. Yang, Y. Shuai, J. Berggren, M. Hammar, Z. Ma, and W. Zhou, “Transfer printing stacked nanomembrane lasers on silicon,” Nat. Photonics 6, 617–622 (2012).

Zhu, D.

Zhu, Z.-T.

M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5, 33–38 (2006).

Adv. Mater. (1)

A. Carlson, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication,” Adv. Mater. 24(39), 5284–5318 (2012).
[PubMed]

Advanced Optical Materials (1)

J. Yoon, S. M. Lee, D. Kang, M. A. Meitl, C. A. Bower, and J. Rogers, “Heterogeneously Integrated Optoelectronic Devices Enabled by MicroTransfer Printing,” Advanced Optical Materials 3, 1313–1335 (2015).

Appl. Phys. Lett. (5)

J. Wang, C. Youtsey, R. McCarthy, R. Reddy, N. Allen, L. Guido, J. Xie, E. Beam, and P. Fay, “Thin-film GaN Schottky diodes formed by epitaxial lift-off,”, Appl. Phys. Lett. 110, 173503 (2017).

E. Menard, K. Lee, Y. Khang, R. Nuzzo, and J. Rogers, “A printable form of silicon for high performance thin film transistors on plastic substrates,” Appl. Phys. Lett. 84, 5398–5400 (2004).

T. H. Kim, A. Carlson, J. H. Ahn, S. M. Won, S. Wang, Y. Huang, and J. A. Rogers, “Kinetically controlled, adhesiveless transfer printing using microstructured stamps,” Appl. Phys. Lett. 94, 113502 (2009).

A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, and E. Pelucchi, “Unusual nanostructures of “lattice matched” InP on AlInAs,” Appl. Phys. Lett. 104, 141606 (2014).

E. E. Mura, A. Gocalinska, G. Juska, S. T. Moroni, A. Pescaglini, and E. Pelucchi, “Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop,”,” Appl. Phys. Lett. 110, 113101 (2017).

IEEE Photonics J. (1)

R. Loi, J. O’Callaghan, B. Roycroft, C. Robert, A. Fecioru, A. J. Trindade, A. Gocalinska, E. Pelucchi, C. A. Bower, and B. Corbett, “Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates,” IEEE Photonics J. 8, 1504810 (2016).

Laser Photonics Rev. (1)

X. Sheng, C. Robert, S. Wang, G. Pakeltis, B. Corbett, and J. A. Rogers, “Transfer printing of fully formed thin film micro scale GaAs lasers on silicon with a thermally conductive interface material,” Laser Photonics Rev. 9, L17–L22 (2015).

Nat. Commun. (1)

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[PubMed]

Nat. Mater. (1)

M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, “Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nat. Mater. 5, 33–38 (2006).

Nat. Photonics (2)

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbett, “Wafer-scale integration of group III-V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6, 610–614 (2012).

H. Yang, D. Zhao, S. Chuwongin, J. H. Seo, W. Yang, Y. Shuai, J. Berggren, M. Hammar, Z. Ma, and W. Zhou, “Transfer printing stacked nanomembrane lasers on silicon,” Nat. Photonics 6, 617–622 (2012).

Opt. Express (2)

Photonics Research (1)

C. Bower, M. Meitl, B. Raymond, E. Radauscher, R. Cok, S. Bonafede, D. Gomez, T. Moore, C. Prevatte, B. Fisher, R. Rotzoll, G. Melnik, A. Fecioru, and A. Trindade, “Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes,” Photonics Research 5, A23–A29 (2017).

Proc. SPIE (1)

T. Kusserow, S. Ferwana, T. Nakamura, T. Hayakawa, N. Dharmarasu, B. Vengatesan, and H. Hillmer, “Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices,” Proc. SPIE 6993, 69930B (2008).

Other (1)

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), Las Vegas, (2016).

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Figures (6)

Fig. 1
Fig. 1

Schematic of the coupon fabrication process for µTP with steps 1 to 9 as described in the text. The inset (upper right) shows completed tethered coupons prior to µTP. The orange features around the rectangular coupons are the resist tethers while the light green areas between the tethers is the grating structure on the sacrificial layer where the etching starts.

Fig. 2
Fig. 2

Etch rate of FeCl3:H2O (1:2) for the 500 nm thick InAlAs sacrificial layer and its selectivity to InP at different bath temperatures (a). Comparison of etch depths along the <011> crystal directions as a function of time for 500 nm thick InGaAs and InAlAs release layers at 6 °C bath temperature (b).

Fig. 3
Fig. 3

Comparison of the etch fronts for circular and rectangular coupons containing InGaAs and the InAlAs release layers. The coupons were partially undercut in FeCl3:H2O (1:2) at 6 °C and peeled off by tape. In this way it is possible to observe the profile of the remaining part of the sacrificial layer. Circular and rectangular coupons with InGaAs release layer after 120 minutes (a) and after 360 minutes (b) etch times show a crystallographic dependent etch front. Similar InAlAs based coupons (c, d) show an isotropic etch profile after 60 minutes.

Fig. 4
Fig. 4

Plot of the profiles for the stubs from 110 µm wide and 800 µm long coupons including InGaAs and InAlAs release layers. The profiles have been measured at three different positions along the stub, at the centre, at 200 μm and at 380 μm from the centre along the coupon.

Fig. 5
Fig. 5

Microscope images of coupons printed on quartz using an InGaAs (a) and an InAlAs (b) release layer. The InGaAs based coupons show air gaps (lighter colored areas) along the length of the coupon increasing in size towards the centre of the coupon. The InAlAs coupons are monochrome indicating a flat contact with the quartz substrate

Fig. 6
Fig. 6

Light current characteristics at 20 °C for a laser using the InAlAs layer in its release structure, before and after µTP to a Si substrate (a). Lasing spectrum from a printed device (b).