Abstract

Oxygen-doped amorphous silicon nitride thin films were fabricated in a plasma enhanced chemical vapor deposition system by using H2 diluted gases under a substrate temperature of 250 °C. An intense photoluminescence was achieved under 325 nm laser excitation and the luminescence is reduced to about 70% of the initial emission intensity after 1hr laser irradiation, which is improved compared with that deposited at low substrate temperature. Time-resolved photoluminescence behaviors were characterized and two recombination processes were observed, one is a “fast” nanosecond PL decay component which was explained in terms of the relaxation process to the localized O-Si-N related states, and the other is a “slow” microsecond radiative recombination component via the localized states associated with O-Si-N bands.

© 2014 Optical Society of America

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    [Crossref]
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    [Crossref]
  6. L. Ma, R. Song, Y. Miao, C. Li, Y. Wang, and Z. Cao, “Blue-violet photoluminescence from amorphous Si-in-SiNx thin films with external quantum efficiency in percentages,” Appl. Phys. Lett. 88(9), 093102 (2006).
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  7. M. Wang, M. Xie, L. Ferraioli, Z. Yuan, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. I. room temperature band tail states photoluminescence,” J. Appl. Phys. 104(8), 083504 (2008).
    [Crossref]
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    [Crossref]
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    [Crossref]
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  19. S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass, “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films,” Appl. Phys. Lett. 87(26), 261907 (2005).
    [Crossref]
  20. S. Li, Y. Cao, J. Xu, Y. Rui, W. Li, and K. Chen, “Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique,” Appl. Surf. Sci. 270, 287–291 (2013).
    [Crossref]
  21. S. V. Deshpande, E. Gulari, S. W. Brown, and S. C. Rand, “Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition,” J. Appl. Phys. 77(12), 6534–6541 (1995).
    [Crossref]
  22. Th. Gertkemper, J. Ristein, and L. Ley, “In situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy,” J. Non-Cryst. Solids 164–166, 123–126 (1993).
    [Crossref]
  23. T. Akasaka and I. Shimizu, “In situ real time studies of the formation of polycrystalline silicon films on glass grown by a layer-by-layer technique,” Appl. Phys. Lett. 66(25), 3441–3443 (1995).
    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
  28. B. M. Monroy, O. Crégut, M. Gallart, B. Hönerlage, and P. Gilliot, “Optical gain observation on silicon nanocrystals embedded in silicon nitride under femtosecond pumping,” Appl. Phys. Lett. 98(26), 261108 (2011).
    [Crossref]
  29. H. Chen, J. H. Shin, P. M. Fauchet, J. Y. Sung, J. H. Shin, and G. Y. Sung, “Ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals using the variable stripe length technique,” Appl. Phys. Lett. 91(17), 173121 (2007).
    [Crossref]

2014 (4)

P. Zhang, K. Chen, H. Dong, P. Zhang, Z. Fang, W. Li, J. Xu, and X. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express 4(2), 205–212 (2014).
[Crossref]

2013 (1)

S. Li, Y. Cao, J. Xu, Y. Rui, W. Li, and K. Chen, “Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique,” Appl. Surf. Sci. 270, 287–291 (2013).
[Crossref]

2011 (1)

B. M. Monroy, O. Crégut, M. Gallart, B. Hönerlage, and P. Gilliot, “Optical gain observation on silicon nanocrystals embedded in silicon nitride under femtosecond pumping,” Appl. Phys. Lett. 98(26), 261108 (2011).
[Crossref]

2010 (2)

J. Xu, G. Chen, C. Song, K. Chen, X. Huang, and Z. Ma, “Formation and properties of high density Si nanodots,” Appl. Surf. Sci. 256(18), 5691–5694 (2010).
[Crossref]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi C 7(3–4), 828–831 (2010).

2008 (2)

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).
[Crossref]

M. Wang, M. Xie, L. Ferraioli, Z. Yuan, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. I. room temperature band tail states photoluminescence,” J. Appl. Phys. 104(8), 083504 (2008).
[Crossref]

2007 (3)

M. Wang, D. Li, Z. Yuan, D. Yang, and D. Que, “Photoluminescence of Si-rich silicon nitride: defect-related states and silicon nanoclusters,” Appl. Phys. Lett. 90(13), 131903 (2007).
[Crossref]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

H. Chen, J. H. Shin, P. M. Fauchet, J. Y. Sung, J. H. Shin, and G. Y. Sung, “Ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals using the variable stripe length technique,” Appl. Phys. Lett. 91(17), 173121 (2007).
[Crossref]

2006 (2)

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

L. Ma, R. Song, Y. Miao, C. Li, Y. Wang, and Z. Cao, “Blue-violet photoluminescence from amorphous Si-in-SiNx thin films with external quantum efficiency in percentages,” Appl. Phys. Lett. 88(9), 093102 (2006).
[Crossref]

2005 (1)

S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass, “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films,” Appl. Phys. Lett. 87(26), 261907 (2005).
[Crossref]

2004 (1)

T. Y. Kim, N. M. Park, K. H. Kim, G. Y. Sung, Y. W. Ok, T. Y. Sung, and C. J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett. 85(22), 5355–5357 (2004).
[Crossref]

2003 (2)

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys. 93(1), 239–244 (2003).
[Crossref]

G. Qin and Y. Li, “Photoluminescence mechanism model for oxidized porous silicon and nanoscale-silicon-particle-embedded silicon oxide,” Phys. Rev. B 68(8), 085309 (2003).
[Crossref]

2001 (1)

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett. 86(7), 1355–1357 (2001).
[Crossref] [PubMed]

2000 (1)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

1999 (1)

J. Linnros, N. Lalic, A. Galeckas, and V. Grivickas, “Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2,” J. Appl. Phys. 86(11), 6128–6134 (1999).
[Crossref]

1995 (2)

T. Akasaka and I. Shimizu, “In situ real time studies of the formation of polycrystalline silicon films on glass grown by a layer-by-layer technique,” Appl. Phys. Lett. 66(25), 3441–3443 (1995).
[Crossref]

S. V. Deshpande, E. Gulari, S. W. Brown, and S. C. Rand, “Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition,” J. Appl. Phys. 77(12), 6534–6541 (1995).
[Crossref]

1993 (2)

Th. Gertkemper, J. Ristein, and L. Ley, “In situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy,” J. Non-Cryst. Solids 164–166, 123–126 (1993).
[Crossref]

L. Pavesi and M. Ceschini, “Stretched-exponential decay of the luminescence in porous silicon,” Phys. Rev. B Condens. Matter 48(23), 17625–17628 (1993).
[Crossref] [PubMed]

Akasaka, T.

T. Akasaka and I. Shimizu, “In situ real time studies of the formation of polycrystalline silicon films on glass grown by a layer-by-layer technique,” Appl. Phys. Lett. 66(25), 3441–3443 (1995).
[Crossref]

Anopchenko, A.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).
[Crossref]

Bower, C. A.

S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass, “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films,” Appl. Phys. Lett. 87(26), 261907 (2005).
[Crossref]

Brown, S. W.

S. V. Deshpande, E. Gulari, S. W. Brown, and S. C. Rand, “Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition,” J. Appl. Phys. 77(12), 6534–6541 (1995).
[Crossref]

Cao, Y.

S. Li, Y. Cao, J. Xu, Y. Rui, W. Li, and K. Chen, “Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique,” Appl. Surf. Sci. 270, 287–291 (2013).
[Crossref]

Cao, Z.

L. Ma, R. Song, Y. Miao, C. Li, Y. Wang, and Z. Cao, “Blue-violet photoluminescence from amorphous Si-in-SiNx thin films with external quantum efficiency in percentages,” Appl. Phys. Lett. 88(9), 093102 (2006).
[Crossref]

Ceschini, M.

L. Pavesi and M. Ceschini, “Stretched-exponential decay of the luminescence in porous silicon,” Phys. Rev. B Condens. Matter 48(23), 17625–17628 (1993).
[Crossref] [PubMed]

Chen, D.

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

Chen, G.

J. Xu, G. Chen, C. Song, K. Chen, X. Huang, and Z. Ma, “Formation and properties of high density Si nanodots,” Appl. Surf. Sci. 256(18), 5691–5694 (2010).
[Crossref]

Chen, H.

H. Chen, J. H. Shin, P. M. Fauchet, J. Y. Sung, J. H. Shin, and G. Y. Sung, “Ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals using the variable stripe length technique,” Appl. Phys. Lett. 91(17), 173121 (2007).
[Crossref]

Chen, K.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

P. Zhang, K. Chen, H. Dong, P. Zhang, Z. Fang, W. Li, J. Xu, and X. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

S. Li, Y. Cao, J. Xu, Y. Rui, W. Li, and K. Chen, “Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique,” Appl. Surf. Sci. 270, 287–291 (2013).
[Crossref]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi C 7(3–4), 828–831 (2010).

J. Xu, G. Chen, C. Song, K. Chen, X. Huang, and Z. Ma, “Formation and properties of high density Si nanodots,” Appl. Surf. Sci. 256(18), 5691–5694 (2010).
[Crossref]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

K. Chen, H. Dong, D. Wang, R. Huang, W. Li, Z. Ma, J. Xu, and X. Huang, “Optical gain from luminescent a-SiNxOy waveguide,” in Proceedings of 7th IEEE International Conference on Group IV Photonics (Beijing, 2010), pp. 147–149.
[Crossref]

Chen, S.

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

Choi, C. J.

T. Y. Kim, N. M. Park, K. H. Kim, G. Y. Sung, Y. W. Ok, T. Y. Sung, and C. J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett. 85(22), 5355–5357 (2004).
[Crossref]

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett. 86(7), 1355–1357 (2001).
[Crossref] [PubMed]

Crégut, O.

B. M. Monroy, O. Crégut, M. Gallart, B. Hönerlage, and P. Gilliot, “Optical gain observation on silicon nanocrystals embedded in silicon nitride under femtosecond pumping,” Appl. Phys. Lett. 98(26), 261108 (2011).
[Crossref]

Dal Negro, L.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

Deshpande, S. V.

S. V. Deshpande, E. Gulari, S. W. Brown, and S. C. Rand, “Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition,” J. Appl. Phys. 77(12), 6534–6541 (1995).
[Crossref]

Dong, H.

P. Zhang, K. Chen, H. Dong, P. Zhang, Z. Fang, W. Li, J. Xu, and X. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi C 7(3–4), 828–831 (2010).

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

K. Chen, H. Dong, D. Wang, R. Huang, W. Li, Z. Ma, J. Xu, and X. Huang, “Optical gain from luminescent a-SiNxOy waveguide,” in Proceedings of 7th IEEE International Conference on Group IV Photonics (Beijing, 2010), pp. 147–149.
[Crossref]

Fang, Z.

P. Zhang, K. Chen, H. Dong, P. Zhang, Z. Fang, W. Li, J. Xu, and X. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

Fauchet, P. M.

H. Chen, J. H. Shin, P. M. Fauchet, J. Y. Sung, J. H. Shin, and G. Y. Sung, “Ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals using the variable stripe length technique,” Appl. Phys. Lett. 91(17), 173121 (2007).
[Crossref]

Ferraioli, L.

M. Wang, M. Xie, L. Ferraioli, Z. Yuan, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. I. room temperature band tail states photoluminescence,” J. Appl. Phys. 104(8), 083504 (2008).
[Crossref]

Franzò, G.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

Galeckas, A.

J. Linnros, N. Lalic, A. Galeckas, and V. Grivickas, “Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2,” J. Appl. Phys. 86(11), 6128–6134 (1999).
[Crossref]

Gallart, M.

B. M. Monroy, O. Crégut, M. Gallart, B. Hönerlage, and P. Gilliot, “Optical gain observation on silicon nanocrystals embedded in silicon nitride under femtosecond pumping,” Appl. Phys. Lett. 98(26), 261108 (2011).
[Crossref]

Gertkemper, Th.

Th. Gertkemper, J. Ristein, and L. Ley, “In situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy,” J. Non-Cryst. Solids 164–166, 123–126 (1993).
[Crossref]

Gilliot, P.

B. M. Monroy, O. Crégut, M. Gallart, B. Hönerlage, and P. Gilliot, “Optical gain observation on silicon nanocrystals embedded in silicon nitride under femtosecond pumping,” Appl. Phys. Lett. 98(26), 261108 (2011).
[Crossref]

Glass, J. T.

S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass, “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films,” Appl. Phys. Lett. 87(26), 261907 (2005).
[Crossref]

Grivickas, V.

J. Linnros, N. Lalic, A. Galeckas, and V. Grivickas, “Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2,” J. Appl. Phys. 86(11), 6128–6134 (1999).
[Crossref]

Gulari, E.

S. V. Deshpande, E. Gulari, S. W. Brown, and S. C. Rand, “Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition,” J. Appl. Phys. 77(12), 6534–6541 (1995).
[Crossref]

Guo, Y.

Han, P.

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

Hönerlage, B.

B. M. Monroy, O. Crégut, M. Gallart, B. Hönerlage, and P. Gilliot, “Optical gain observation on silicon nanocrystals embedded in silicon nitride under femtosecond pumping,” Appl. Phys. Lett. 98(26), 261108 (2011).
[Crossref]

Huang, J.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).
[Crossref]

Huang, R.

R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express 4(2), 205–212 (2014).
[Crossref]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

K. Chen, H. Dong, D. Wang, R. Huang, W. Li, Z. Ma, J. Xu, and X. Huang, “Optical gain from luminescent a-SiNxOy waveguide,” in Proceedings of 7th IEEE International Conference on Group IV Photonics (Beijing, 2010), pp. 147–149.
[Crossref]

Huang, X.

P. Zhang, K. Chen, H. Dong, P. Zhang, Z. Fang, W. Li, J. Xu, and X. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi C 7(3–4), 828–831 (2010).

J. Xu, G. Chen, C. Song, K. Chen, X. Huang, and Z. Ma, “Formation and properties of high density Si nanodots,” Appl. Surf. Sci. 256(18), 5691–5694 (2010).
[Crossref]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

K. Chen, H. Dong, D. Wang, R. Huang, W. Li, Z. Ma, J. Xu, and X. Huang, “Optical gain from luminescent a-SiNxOy waveguide,” in Proceedings of 7th IEEE International Conference on Group IV Photonics (Beijing, 2010), pp. 147–149.
[Crossref]

Kashio, N.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys. 93(1), 239–244 (2003).
[Crossref]

Kato, H.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys. 93(1), 239–244 (2003).
[Crossref]

Kim, K. H.

T. Y. Kim, N. M. Park, K. H. Kim, G. Y. Sung, Y. W. Ok, T. Y. Sung, and C. J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett. 85(22), 5355–5357 (2004).
[Crossref]

Kim, T. Y.

T. Y. Kim, N. M. Park, K. H. Kim, G. Y. Sung, Y. W. Ok, T. Y. Sung, and C. J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett. 85(22), 5355–5357 (2004).
[Crossref]

Lalic, N.

J. Linnros, N. Lalic, A. Galeckas, and V. Grivickas, “Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2,” J. Appl. Phys. 86(11), 6128–6134 (1999).
[Crossref]

Ley, L.

Th. Gertkemper, J. Ristein, and L. Ley, “In situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy,” J. Non-Cryst. Solids 164–166, 123–126 (1993).
[Crossref]

Li, C.

L. Ma, R. Song, Y. Miao, C. Li, Y. Wang, and Z. Cao, “Blue-violet photoluminescence from amorphous Si-in-SiNx thin films with external quantum efficiency in percentages,” Appl. Phys. Lett. 88(9), 093102 (2006).
[Crossref]

Li, D.

M. Wang, M. Xie, L. Ferraioli, Z. Yuan, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. I. room temperature band tail states photoluminescence,” J. Appl. Phys. 104(8), 083504 (2008).
[Crossref]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).
[Crossref]

M. Wang, D. Li, Z. Yuan, D. Yang, and D. Que, “Photoluminescence of Si-rich silicon nitride: defect-related states and silicon nanoclusters,” Appl. Phys. Lett. 90(13), 131903 (2007).
[Crossref]

Li, H.

Li, S.

S. Li, Y. Cao, J. Xu, Y. Rui, W. Li, and K. Chen, “Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique,” Appl. Surf. Sci. 270, 287–291 (2013).
[Crossref]

Li, W.

P. Zhang, K. Chen, H. Dong, P. Zhang, Z. Fang, W. Li, J. Xu, and X. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

S. Li, Y. Cao, J. Xu, Y. Rui, W. Li, and K. Chen, “Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique,” Appl. Surf. Sci. 270, 287–291 (2013).
[Crossref]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi C 7(3–4), 828–831 (2010).

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

K. Chen, H. Dong, D. Wang, R. Huang, W. Li, Z. Ma, J. Xu, and X. Huang, “Optical gain from luminescent a-SiNxOy waveguide,” in Proceedings of 7th IEEE International Conference on Group IV Photonics (Beijing, 2010), pp. 147–149.
[Crossref]

Li, Y.

G. Qin and Y. Li, “Photoluminescence mechanism model for oxidized porous silicon and nanoscale-silicon-particle-embedded silicon oxide,” Phys. Rev. B 68(8), 085309 (2003).
[Crossref]

Lin, H.

Lin, Z.

Linnros, J.

J. Linnros, N. Lalic, A. Galeckas, and V. Grivickas, “Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2,” J. Appl. Phys. 86(11), 6128–6134 (1999).
[Crossref]

Lu, P.

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

Ma, L.

L. Ma, R. Song, Y. Miao, C. Li, Y. Wang, and Z. Cao, “Blue-violet photoluminescence from amorphous Si-in-SiNx thin films with external quantum efficiency in percentages,” Appl. Phys. Lett. 88(9), 093102 (2006).
[Crossref]

Ma, Z.

J. Xu, G. Chen, C. Song, K. Chen, X. Huang, and Z. Ma, “Formation and properties of high density Si nanodots,” Appl. Surf. Sci. 256(18), 5691–5694 (2010).
[Crossref]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi C 7(3–4), 828–831 (2010).

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

K. Chen, H. Dong, D. Wang, R. Huang, W. Li, Z. Ma, J. Xu, and X. Huang, “Optical gain from luminescent a-SiNxOy waveguide,” in Proceedings of 7th IEEE International Conference on Group IV Photonics (Beijing, 2010), pp. 147–149.
[Crossref]

Mazzoleni, C.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

Miao, Y.

L. Ma, R. Song, Y. Miao, C. Li, Y. Wang, and Z. Cao, “Blue-violet photoluminescence from amorphous Si-in-SiNx thin films with external quantum efficiency in percentages,” Appl. Phys. Lett. 88(9), 093102 (2006).
[Crossref]

Monroy, B. M.

B. M. Monroy, O. Crégut, M. Gallart, B. Hönerlage, and P. Gilliot, “Optical gain observation on silicon nanocrystals embedded in silicon nitride under femtosecond pumping,” Appl. Phys. Lett. 98(26), 261108 (2011).
[Crossref]

Mu, W.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

Naskar, S.

S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass, “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films,” Appl. Phys. Lett. 87(26), 261907 (2005).
[Crossref]

Noma, T.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys. 93(1), 239–244 (2003).
[Crossref]

Ohki, Y.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys. 93(1), 239–244 (2003).
[Crossref]

Ok, Y. W.

T. Y. Kim, N. M. Park, K. H. Kim, G. Y. Sung, Y. W. Ok, T. Y. Sung, and C. J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett. 85(22), 5355–5357 (2004).
[Crossref]

Park, N. M.

T. Y. Kim, N. M. Park, K. H. Kim, G. Y. Sung, Y. W. Ok, T. Y. Sung, and C. J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett. 85(22), 5355–5357 (2004).
[Crossref]

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett. 86(7), 1355–1357 (2001).
[Crossref] [PubMed]

Park, S. J.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett. 86(7), 1355–1357 (2001).
[Crossref] [PubMed]

Pavesi, L.

M. Wang, M. Xie, L. Ferraioli, Z. Yuan, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. I. room temperature band tail states photoluminescence,” J. Appl. Phys. 104(8), 083504 (2008).
[Crossref]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).
[Crossref]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

L. Pavesi and M. Ceschini, “Stretched-exponential decay of the luminescence in porous silicon,” Phys. Rev. B Condens. Matter 48(23), 17625–17628 (1993).
[Crossref] [PubMed]

Priolo, F.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

Qian, B.

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

Qin, G.

G. Qin and Y. Li, “Photoluminescence mechanism model for oxidized porous silicon and nanoscale-silicon-particle-embedded silicon oxide,” Phys. Rev. B 68(8), 085309 (2003).
[Crossref]

Que, D.

M. Wang, D. Li, Z. Yuan, D. Yang, and D. Que, “Photoluminescence of Si-rich silicon nitride: defect-related states and silicon nanoclusters,” Appl. Phys. Lett. 90(13), 131903 (2007).
[Crossref]

Rand, S. C.

S. V. Deshpande, E. Gulari, S. W. Brown, and S. C. Rand, “Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition,” J. Appl. Phys. 77(12), 6534–6541 (1995).
[Crossref]

Ristein, J.

Th. Gertkemper, J. Ristein, and L. Ley, “In situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy,” J. Non-Cryst. Solids 164–166, 123–126 (1993).
[Crossref]

Rui, Y.

S. Li, Y. Cao, J. Xu, Y. Rui, W. Li, and K. Chen, “Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique,” Appl. Surf. Sci. 270, 287–291 (2013).
[Crossref]

Seol, K. S.

H. Kato, N. Kashio, Y. Ohki, K. S. Seol, and T. Noma, “Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films,” J. Appl. Phys. 93(1), 239–244 (2003).
[Crossref]

Seong, T. Y.

N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett. 86(7), 1355–1357 (2001).
[Crossref] [PubMed]

Shimizu, I.

T. Akasaka and I. Shimizu, “In situ real time studies of the formation of polycrystalline silicon films on glass grown by a layer-by-layer technique,” Appl. Phys. Lett. 66(25), 3441–3443 (1995).
[Crossref]

Shin, J. H.

H. Chen, J. H. Shin, P. M. Fauchet, J. Y. Sung, J. H. Shin, and G. Y. Sung, “Ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals using the variable stripe length technique,” Appl. Phys. Lett. 91(17), 173121 (2007).
[Crossref]

H. Chen, J. H. Shin, P. M. Fauchet, J. Y. Sung, J. H. Shin, and G. Y. Sung, “Ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals using the variable stripe length technique,” Appl. Phys. Lett. 91(17), 173121 (2007).
[Crossref]

Song, C.

Song, J.

Song, R.

L. Ma, R. Song, Y. Miao, C. Li, Y. Wang, and Z. Cao, “Blue-violet photoluminescence from amorphous Si-in-SiNx thin films with external quantum efficiency in percentages,” Appl. Phys. Lett. 88(9), 093102 (2006).
[Crossref]

Stoner, B. R.

S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass, “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films,” Appl. Phys. Lett. 87(26), 261907 (2005).
[Crossref]

Sun, S.

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

Sung, G. Y.

H. Chen, J. H. Shin, P. M. Fauchet, J. Y. Sung, J. H. Shin, and G. Y. Sung, “Ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals using the variable stripe length technique,” Appl. Phys. Lett. 91(17), 173121 (2007).
[Crossref]

T. Y. Kim, N. M. Park, K. H. Kim, G. Y. Sung, Y. W. Ok, T. Y. Sung, and C. J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett. 85(22), 5355–5357 (2004).
[Crossref]

Sung, J. Y.

H. Chen, J. H. Shin, P. M. Fauchet, J. Y. Sung, J. H. Shin, and G. Y. Sung, “Ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals using the variable stripe length technique,” Appl. Phys. Lett. 91(17), 173121 (2007).
[Crossref]

Sung, T. Y.

T. Y. Kim, N. M. Park, K. H. Kim, G. Y. Sung, Y. W. Ok, T. Y. Sung, and C. J. Choi, “Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films,” Appl. Phys. Lett. 85(22), 5355–5357 (2004).
[Crossref]

Wang, D.

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi C 7(3–4), 828–831 (2010).

K. Chen, H. Dong, D. Wang, R. Huang, W. Li, Z. Ma, J. Xu, and X. Huang, “Optical gain from luminescent a-SiNxOy waveguide,” in Proceedings of 7th IEEE International Conference on Group IV Photonics (Beijing, 2010), pp. 147–149.
[Crossref]

Wang, M.

M. Wang, M. Xie, L. Ferraioli, Z. Yuan, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. I. room temperature band tail states photoluminescence,” J. Appl. Phys. 104(8), 083504 (2008).
[Crossref]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).
[Crossref]

M. Wang, D. Li, Z. Yuan, D. Yang, and D. Que, “Photoluminescence of Si-rich silicon nitride: defect-related states and silicon nanoclusters,” Appl. Phys. Lett. 90(13), 131903 (2007).
[Crossref]

Wang, X.

R. Huang, Z. Lin, Y. Guo, C. Song, X. Wang, J. Song, H. Lin, L. Xu, and H. Li, “Bright red, orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics,” Opt. Mater. Express 4(2), 205–212 (2014).
[Crossref]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

Wang, Y.

L. Ma, R. Song, Y. Miao, C. Li, Y. Wang, and Z. Cao, “Blue-violet photoluminescence from amorphous Si-in-SiNx thin films with external quantum efficiency in percentages,” Appl. Phys. Lett. 88(9), 093102 (2006).
[Crossref]

Wolter, S. D.

S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass, “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films,” Appl. Phys. Lett. 87(26), 261907 (2005).
[Crossref]

Xie, M.

M. Wang, M. Xie, L. Ferraioli, Z. Yuan, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. I. room temperature band tail states photoluminescence,” J. Appl. Phys. 104(8), 083504 (2008).
[Crossref]

Xu, J.

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

W. Mu, P. Zhang, J. Xu, S. Sun, J. Xu, W. Li, and K. Chen, “Direct-current and alternating-current driving Si quantum dots-based light emitting device,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8200106 (2014).

P. Zhang, K. Chen, H. Dong, P. Zhang, Z. Fang, W. Li, J. Xu, and X. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

S. Li, Y. Cao, J. Xu, Y. Rui, W. Li, and K. Chen, “Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique,” Appl. Surf. Sci. 270, 287–291 (2013).
[Crossref]

H. Dong, K. Chen, D. Wang, W. Li, Z. Ma, J. Xu, and X. Huang, “A new luminescent defect state in low temperature grown amorphous SiNxOy thin films,” Phys. Status Solidi C 7(3–4), 828–831 (2010).

J. Xu, G. Chen, C. Song, K. Chen, X. Huang, and Z. Ma, “Formation and properties of high density Si nanodots,” Appl. Surf. Sci. 256(18), 5691–5694 (2010).
[Crossref]

R. Huang, K. Chen, P. Han, H. Dong, X. Wang, D. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices,” Appl. Phys. Lett. 90(9), 093515 (2007).
[Crossref]

R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, “Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films,” Appl. Phys. Lett. 89(22), 221120 (2006).
[Crossref]

K. Chen, H. Dong, D. Wang, R. Huang, W. Li, Z. Ma, J. Xu, and X. Huang, “Optical gain from luminescent a-SiNxOy waveguide,” in Proceedings of 7th IEEE International Conference on Group IV Photonics (Beijing, 2010), pp. 147–149.
[Crossref]

Xu, L.

Xu, X.

P. Zhang, X. Zhang, P. Lu, J. Xu, X. Xu, W. Li, and K. Chen, “Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers,” Appl. Surf. Sci. 292, 262–266 (2014).
[Crossref]

Yang, D.

M. Wang, M. Xie, L. Ferraioli, Z. Yuan, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. I. room temperature band tail states photoluminescence,” J. Appl. Phys. 104(8), 083504 (2008).
[Crossref]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).
[Crossref]

M. Wang, D. Li, Z. Yuan, D. Yang, and D. Que, “Photoluminescence of Si-rich silicon nitride: defect-related states and silicon nanoclusters,” Appl. Phys. Lett. 90(13), 131903 (2007).
[Crossref]

Yuan, Z.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. II. defect states electroluminescence,” J. Appl. Phys. 104(8), 083505 (2008).
[Crossref]

M. Wang, M. Xie, L. Ferraioli, Z. Yuan, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNx films. I. room temperature band tail states photoluminescence,” J. Appl. Phys. 104(8), 083504 (2008).
[Crossref]

M. Wang, D. Li, Z. Yuan, D. Yang, and D. Que, “Photoluminescence of Si-rich silicon nitride: defect-related states and silicon nanoclusters,” Appl. Phys. Lett. 90(13), 131903 (2007).
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Figures (5)

Fig. 1
Fig. 1 (a) Optical absorption spectrum of a-SiN:O films, the inset is the Tauc plots. (b) Room-temperature PL spectrum of a-SiN:O films. The inset is the PL stability as a function of light soaking time under 325 nm He-Cd laser irradiation.
Fig. 2
Fig. 2 X-TEM image of the a-SiN:O films, the inset is the corresponding electron diffraction image.
Fig. 3
Fig. 3 XPS spectra of a-SiN:O films in the (a) Si 2p regions and (b) N 1s regions. The raw Si 2p spectrum (open circle) is decomposed into four Gaussian peaks (solid lines).
Fig. 4
Fig. 4 PL decay dynamics of a-SiN:O films under the excitation (a) λexc = 375 nm, 75 ps and (b) λexc = 355 nm, 6 ns. The solid curves are the fits achieved with multi-exponential function. The detected emission wavelengths are 440 nm, 480 nm, 525 nm and 550 nm, respectively.
Fig. 5
Fig. 5 Schematic diagram of the excitation and radiative processes.

Equations (1)

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I ( t ) = i = 1 n B i exp ( t / τ i )

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