Abstract

We report on the results from a comparative study on the continuous-wave laser performance of Yb:YGG, Yb:LuGG, and Yb:GGG gallium garnets grown by the optical floating zone technique, conducted under identical experimental conditions. 5−7 W of output powers were generated with the three garnet crystals in a compact linear resonator longitudinally pumped by a diode laser emitting at 970−974 nm. The optical-to-optical and slope efficiencies measured for Yb:YGG amounted to 68% and 80%, respectively, which proved to be much higher than the corresponding efficiencies for Yb:LuGG (49% and 60%) or Yb:GGG (52% and 64%).

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    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef] [PubMed]
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    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef]
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    [CrossRef]

2012 (2)

2011 (1)

2010 (3)

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
[CrossRef]

K. Beil, S. T. Fredrich-Thornton, F. Tellkamp, R. Peters, C. Kränkel, K. Petermann, and G. Huber, “Thermal and laser properties of Yb:LuAG for kW thin disk lasers,” Opt. Express18(20), 20712–20722 (2010).
[CrossRef] [PubMed]

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett.7(10), 726–733 (2010).
[CrossRef]

2009 (2)

Y. Zhang, Z. Wei, B. Zhou, C. Xu, Y. Zou, D. Li, Z. Zhang, H. Zhang, J. Wang, H. Yu, K. Wu, B. Yao, and J. Wang, “Diode-pumped passively mode-locked Yb:Y3Ga5O12 laser,” Opt. Lett.34(21), 3316–3318 (2009).
[CrossRef] [PubMed]

J. Liu, W. Han, H. Zhang, X. Mateos, and V. Petrov, “Comparative study of high-power continuous-wave laser performance of Yb-doped vanadate crystals,” IEEE J. Quantum Electron.45(7), 807–815 (2009).
[CrossRef]

2007 (1)

2006 (1)

2005 (1)

2003 (1)

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

1988 (1)

J. A. Caird, S. A. Payne, P. R. Staber, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum electronic properties of the Na3Ga2Li3F12:Cr3+ laser,” IEEE J. Quantum Electron.24(6), 1077–1099 (1988).
[CrossRef]

Balembois, F.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

Beil, K.

Boughton, R. I.

Boulon, G.

Brenier, A.

Caird, J. A.

J. A. Caird, S. A. Payne, P. R. Staber, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum electronic properties of the Na3Ga2Li3F12:Cr3+ laser,” IEEE J. Quantum Electron.24(6), 1077–1099 (1988).
[CrossRef]

Canibano, H.

Chang, J.

Chase, L. L.

J. A. Caird, S. A. Payne, P. R. Staber, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum electronic properties of the Na3Ga2Li3F12:Cr3+ laser,” IEEE J. Quantum Electron.24(6), 1077–1099 (1988).
[CrossRef]

Chénais, S.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

Ding, S.

Dong, J.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett.7(10), 726–733 (2010).
[CrossRef]

J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett.32(22), 3266–3268 (2007).
[CrossRef] [PubMed]

Druon, F.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

Eganyan, A.

Fredrich-Thornton, S. T.

Georges, P.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

Guyot, Y.

Han, W.

J. Liu, X. Tian, Z. Zhou, K. Wu, W. Han, and H. Zhang, “Efficient laser operation of Yb:Lu3Ga5O12 garnet crystal,” Opt. Lett.37(12), 2388–2390 (2012).
[CrossRef] [PubMed]

J. Liu, W. Han, H. Zhang, X. Mateos, and V. Petrov, “Comparative study of high-power continuous-wave laser performance of Yb-doped vanadate crystals,” IEEE J. Quantum Electron.45(7), 807–815 (2009).
[CrossRef]

Hao, L.

Huber, G.

Jaque, D.

Jiang, M.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
[CrossRef]

Kaminskii, A. A.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett.7(10), 726–733 (2010).
[CrossRef]

J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett.32(22), 3266–3268 (2007).
[CrossRef] [PubMed]

Kränkel, C.

Krupke, W. F.

J. A. Caird, S. A. Payne, P. R. Staber, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum electronic properties of the Na3Ga2Li3F12:Cr3+ laser,” IEEE J. Quantum Electron.24(6), 1077–1099 (1988).
[CrossRef]

Li, D.

Li, P.

Li, S.

Liu, J.

Lv, L.

Mateos, X.

J. Liu, W. Han, H. Zhang, X. Mateos, and V. Petrov, “Comparative study of high-power continuous-wave laser performance of Yb-doped vanadate crystals,” IEEE J. Quantum Electron.45(7), 807–815 (2009).
[CrossRef]

Payne, S. A.

J. A. Caird, S. A. Payne, P. R. Staber, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum electronic properties of the Na3Ga2Li3F12:Cr3+ laser,” IEEE J. Quantum Electron.24(6), 1077–1099 (1988).
[CrossRef]

Petermann, K.

Peters, R.

Petrosyan, A. G.

Petrov, V.

J. Liu, W. Han, H. Zhang, X. Mateos, and V. Petrov, “Comparative study of high-power continuous-wave laser performance of Yb-doped vanadate crystals,” IEEE J. Quantum Electron.45(7), 807–815 (2009).
[CrossRef]

Ramponi, A. J.

J. A. Caird, S. A. Payne, P. R. Staber, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum electronic properties of the Na3Ga2Li3F12:Cr3+ laser,” IEEE J. Quantum Electron.24(6), 1077–1099 (1988).
[CrossRef]

Ródenas, A.

Staber, P. R.

J. A. Caird, S. A. Payne, P. R. Staber, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum electronic properties of the Na3Ga2Li3F12:Cr3+ laser,” IEEE J. Quantum Electron.24(6), 1077–1099 (1988).
[CrossRef]

Tellkamp, F.

Tian, X.

Ueda, K.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett.7(10), 726–733 (2010).
[CrossRef]

J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett.32(22), 3266–3268 (2007).
[CrossRef] [PubMed]

Wang, J.

Wang, Q.

Wang, Y.

Wang, Z.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
[CrossRef]

X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express13(19), 7708–7719 (2005).
[CrossRef] [PubMed]

Wei, Z.

Wu, K.

Xu, C.

Yao, B.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
[CrossRef]

Y. Zhang, Z. Wei, B. Zhou, C. Xu, Y. Zou, D. Li, Z. Zhang, H. Zhang, J. Wang, H. Yu, K. Wu, B. Yao, and J. Wang, “Diode-pumped passively mode-locked Yb:Y3Ga5O12 laser,” Opt. Lett.34(21), 3316–3318 (2009).
[CrossRef] [PubMed]

Yu, H.

Zhang, H.

Zhang, S.

Zhang, X.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
[CrossRef]

X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express13(19), 7708–7719 (2005).
[CrossRef] [PubMed]

Zhang, Y.

Zhang, Z.

Zhou, B.

Zhou, Z.

Zou, Y.

IEEE J. Quantum Electron. (3)

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron.46(12), 1689–1695 (2010).
[CrossRef]

J. Liu, W. Han, H. Zhang, X. Mateos, and V. Petrov, “Comparative study of high-power continuous-wave laser performance of Yb-doped vanadate crystals,” IEEE J. Quantum Electron.45(7), 807–815 (2009).
[CrossRef]

J. A. Caird, S. A. Payne, P. R. Staber, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum electronic properties of the Na3Ga2Li3F12:Cr3+ laser,” IEEE J. Quantum Electron.24(6), 1077–1099 (1988).
[CrossRef]

J. Opt. Soc. Am. B (2)

Laser Phys. Lett. (1)

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett.7(10), 726–733 (2010).
[CrossRef]

Opt. Express (2)

Opt. Lett. (4)

Opt. Mater. (1)

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater.22(2), 99–106 (2003).
[CrossRef]

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