Abstract

Sr1-xBaxSi2O2N2:Eu2+ phosphors were synthesized using high temperature solid state reactions and the reliability of the as-synthesized phosphors for White LED applications was investigated. The oxidation resistance of the phosphors was investigated by baking the phosphors at various temperatures in air for 2 hours and also at 85 °C, 85% relative humidity for 150 hours. The photo stability of the phosphor was studied by illuminating the phosphor using a high power laser diode (450 nm) at various laser fluxes. Phosphor converted LEDs were fabricated using the as-synthesized Sr1-xBaxSi2O2N2:Eu2+ (x = 0 and 0.40) phosphors. The long term stability of the fabricated LEDs was tested by keeping the LEDs at 85 °C and 85% relative humidity for 800 hrs. Even though phosphors show high thermal and chemical stability, the electroluminescent (EL) intensity of the fabricated LEDs drops by 15% after 800 hrs of operation. The degradation of EL intensity of the device might be the result of thermally assisted photo-ionization of Eu2+ ions in the phosphor.

© 2012 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
    [CrossRef]
  2. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
    [CrossRef] [PubMed]
  3. G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, “Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography,” Nanoscale Res. Lett.6(1), 342 (2011).
    [CrossRef] [PubMed]
  4. J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
    [CrossRef]
  5. P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
    [CrossRef]
  6. Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron.15(4), 1066–1072 (2009).
    [CrossRef]
  7. E. Rangel, E. Matioli, Y. S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, “Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes,” Appl. Phys. Lett.98(8), 081104 (2011).
    [CrossRef]
  8. H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
    [CrossRef]
  9. J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010).
    [CrossRef]
  10. J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(25), 251112 (2011).
  11. Y. Taniasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 171111 (2011).
  12. E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
    [CrossRef]
  13. R. J. Xie, Y. Q. Li, N. Hirosaki, and H. Yamamoto, Nitride Phosphors and Solid State Lighting (CRC Press, Taylor and Francis, 2011), Chap. 4.
  14. K. Sakuma, K. Omichi, N. Kimura, M. Ohashi, D. Tanaka, N. Hirosaki, Y. Yamamoto, R.-J. Xie, and T. Suehiro, “Warm-white light-emitting diode with yellowish orange SiALON ceramic phosphor,” Opt. Lett.29(17), 2001–2003 (2004).
    [CrossRef] [PubMed]
  15. R. J. Xie and N. Hirosaki, “Silicon-based oxynitride and nitride phosphors for white LEDs—A review,” Sci. Technol. Adv. Mater.8(7–8), 588–600 (2007).
    [CrossRef]
  16. M. Zeuner, S. Pagano, and W. Schnick, “Nitridosilicates and oxonitridosilicates: from ceramic materials to structural and functional diversity,” Angew. Chem. Int. Ed. Engl.50(34), 7754–7775 (2011).
    [CrossRef] [PubMed]
  17. J. W. H. van Krevel, H. T. Hintzen, R. Metselaar, and A. Meijerink, “Long Wavelength Ce3+ Emission in Y—Si—O—N Materials,” J. Alloy. Comp.268(1–2), 272–277 (1998).
    [CrossRef]
  18. J. W. H. van Krevel, H. T. Hintzen, and R. Metselaar, “On the Ce3+ luminescence in the melilite-type oxide nitride compound Y2Si3−xAlxO3+xN4−x,” Mater. Res. Bull.35(5), 747–754 (2000).
    [CrossRef]
  19. W. H. van Krevel, J. W. T. van Rutten, H. Mandal, H. T. Hintzen, and R. Metselaar, “Luminescence Properties of Terbium-, Cerium-, or Europium-Doped α-Sialon Materials,” J. Solid State Chem.165(1), 19–24 (2002).
    [CrossRef]
  20. Y. Q. Li, G. De With, and H. T. Hintzen, “Synthesis, structure, and luminescence properties of Eu2+ and Ce3+ activated BaYSi4N7,” J. Alloy. Comp.385(1–2), 1–11 (2004).
    [CrossRef]
  21. R. J. Xie, N. Hirosaki, K. Sakuma, Y. Yamamoto, and M. Mitomo, “Eu2+-doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodes,” Appl. Phys. Lett.84(26), 5404–5406 (2004).
    [CrossRef]
  22. M. Yamada, T. Naitou, K. Izuno, H. Tamaki, Y. Murazaki, M. Kameshima, and T. Mukai, “Red-Enhanced white-light-emitting diode using a new red Phosphor,” Jpn. J. Appl. Phys.42(Part 2, No.1A/B), L20–L23 (2003).
    [CrossRef]
  23. Y. Q. Li, C. M. Fang, G. de With, and H. T. Hintzen, “Preparation, structure and photoluminescence properties of Eu2+ and Ce3+-doped SrYSi4N7,” J. Solid State Chem.177(12), 4687–4694 (2004).
    [CrossRef]
  24. X. Piao, K. Machida, T. Horikawa, and B. Yun, “Acetate reduction synthesis of Sr2Si5N8:Eu2+ phosphor and its luminescence properties,” J. Lumin.130(1), 8–12 (2010).
    [CrossRef]
  25. G. Anoop, K. P. Kim, D. W. Suh, I. H. Cho, and J. S. Yoo, “Optical characteristics of Sr2Si3O2N4:Eu2+ phosphor for white light emitting diodes,” Electrochem. Solid-State Lett.14(9), J58–J60 (2011).
    [CrossRef]
  26. N. Kimura, K. Sakuma, S. Hirafune, K. Asano, N. Hirosaki, and R. J. Xie, “Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode,” Appl. Phys. Lett.90(5), 051109 (2007).
    [CrossRef]
  27. H. J. Lee, K. P. Kim, D. W. Suh, and J. S. Yoo, “Tuning the optical properties of (Sr, Ba)3Si6O3N8:Eu phosphor for LED Application,” J. Electrochem. Soc.158(3), J66–J70 (2011).
    [CrossRef]
  28. S. E. Brinkley, N. Pfaff, K. A. Denault, Z. Zhang, H. T. (Bert) Hintzen, R. Seshadri, S. Nakamura, and S. P. DenBaars, “Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting,” Appl. Phys. Lett.99(24), 241106 (2011).
    [CrossRef]
  29. H.-C. Kuo, C.-W. Hung, H.-C. Chen, K.-J. Chen, C.-H. Wang, C.-W. Sher, C.-C. Yeh, C.-C. Lin, C.-H. Chen, and Y.-J. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express19(S4Suppl 4), A930–A936 (2011).
    [CrossRef] [PubMed]
  30. Y. Q. Li, A. C. A. Delsing, G. de With, and H. T. Hintzen, “Luminescence properties of Eu2+-activated alkaline-earth silicon-oxynitride MSi2O2-δN2+2/3δ (M = Ca, Sr, Ba): A promising class of novel LED Conversion phosphors,” Chem. Mater.17(12), 3242–3248 (2005).
    [CrossRef]
  31. V. Bachmann, T. Justel, A. Meijerink, C. Ronda, and P. J. Schmidt, “Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions,” J. Lumin.121(2), 441–449 (2006).
    [CrossRef]
  32. V. Bachmann, C. Ronda, O. Oeckler, W. Schnick, and A. Meijerink, “Color point tuning for (Sr,Ca,Ba)Si2O2N2:Eu2+ for white light LEDs,” Chem. Mater.21(2), 316–325 (2009).
    [CrossRef]
  33. O. Oeckler, F. Stadler, T. Rosenthal, and W. Schnick, “Real structure of SrSi2O2N2,” Solid State Sci.9(2), 205–212 (2007).
    [CrossRef]
  34. J. A. Kechele, O. Oeckler, F. Stadler, and W. Schnick, “Structure elucidation of BaSi2O2N2 – A host lattice for rare-earth doped luminescent materials in phosphor-converted (pc)-LEDs,” Solid State Sci.11(2), 537–543 (2009).
    [CrossRef]
  35. M. Seibald, O. Oeckler, V. R. Celinski, P. J. Schmidt, A. Tucks, and W. Schnick, “Real structure and diffuse scattering of Sr0.5Ba0.5Si2O2N2:Eu2+ - A highly efficient yellow phosphor for pc-LEDs,” Solid State Sci.13(9), 1769–1778 (2011).
    [CrossRef]
  36. Y. H. Song, W. J. Park, and D. H. Yoon, “Photoluminescence properties of Sr1–xSi2O2N2: Eu2+x as green to yellow-emitting phosphor for blue pumped white LEDs,” J. Phys. Chem. Solids71(4), 473–475 (2010).
    [CrossRef]
  37. Y. C. Fang, P.-C. Kao, Y.-C. Yang, and S.-Y. Chu, “Two-Step Synthesis of SrSi2O2N2: Eu2+ Green oxynitride phosphor: Electron-phonon coupling and thermal quenching behavior,” J. Electrochem. Soc.158(8), J246–J249 (2011).
    [CrossRef]
  38. L. X. Yang, X. Xu, L. Y. Hao, Y. F. Wang, L. J. Yin, X. F. Yang, W. He, and Q. X. Li, “Optimization mechanism of CaSi2O2N2: Eu2+ phosphor by La3+ ion doping,” J. Phys. D Appl. Phys.44(35), 355403 (2011).
    [CrossRef]
  39. X. Song, R. Fu, S. Agathopoulos, H. He, X. Zhao, and S. Zhang, “Photoluminescence properties of Eu2+-activated CaSi2O2N2: Redshift and concentration quenching,” J. Appl. Phys.106(3), 033103 (2009).
    [CrossRef]
  40. B.-G. Yun, Y. Miyamoto, and H. Yamamoto, “Luminescence properties of (Sr1 − uBau)Si2O2N2:Eu2+, yellow or orange phosphors for white LEDs, synthesized with (Sr1 − uBau)2SiO4:Eu2+ as a precursor,” J. Electrochem. Soc.154(10), J320–J325 (2007).
    [CrossRef]
  41. B. Lei, K. Machida, T. Horikawa, and H. Hanzawa, “Preparation of (Sr0.5Ba0.5)Si2N2O2:Eu2+ phosphor and its luminescence properties,” Chem. Lett.40(2), 140–141 (2011).
    [CrossRef]
  42. Y. Zhang, L. Wu, M. Ji, B. Wang, Y. Kong, and J. Xu, “Structure and photoluminescence properties of KSr4(BO3)3:Eu3+ red-emitting phosphor,” Opt. Mater. Express2(1), 92–102 (2012).
    [CrossRef]
  43. H. Li, H. K. Yang, B. K. Moon, B. C. Choi, J. H. Jeong, K. Jang, H. S. Lee, and S. S. Yi, “Tunable photoluminescence properties of Eu(II)-and Sm(III)-coactivated Ca9Y(PO4)7 and energy transfer between Eu(II) and Sm(III),” Opt. Mater. Express2(4), 443–451 (2012).
    [CrossRef]
  44. S. K. K. Shaat, H. C. Swart, and O. M. Ntwaeaborwa, “Synthesis and characterization of white light emitting CaxSr1-xAl2O4:Tb3+,Eu3+ phosphor for solid state lighting,” Opt. Mater. Express2(7), 962–968 (2012).
    [CrossRef]
  45. T. L. Barr, “An XPS Study of Si as it Occurs in Adsorbents, Catalysts and Thin Films,” Appl. Surf. Sci.15(1–4), 1–35 (1983).
    [CrossRef]
  46. R. P. Vasquez, “X-ray photoelectron spectroscopy study of Sr and Ba compounds,” J. Electron. Spectrosc. Relat. Phemon.56(3), 217–240 (1991).
    [CrossRef]
  47. V. A. Gritsenko, R. W. M. Kwok, H. Wong, and J. B. Xu, “Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride,” J. Non-Cryst. Solids297(1), 96–101 (2002).
    [CrossRef]
  48. S. Yamada, H. Emoto, M. Ibukiyama, and N. Hirosaki, “Properties of SiAlON powder phosphors for white LEDs,” J. Eur. Ceram. Soc.32(7), 1355–1358 (2012).
    [CrossRef]
  49. A. Nag and T. R. N. Kutty, “The light induced valence change of europium in Sr2SiO4:Eu involving transient crystal structure,” J. Mater. Chem.14(10), 1598–1604 (2004).
    [CrossRef]
  50. G. Blasse and B. C. Grabmaier, Luminescent Materials (Springer, 1994).
  51. P. Dorenbos, “Thermal quenching of Eu2+ 5d–4f luminescence in inorganic compounds,” J. Phys. Condens. Matter17(50), 8103–8111 (2005).
    [CrossRef]

2012

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Y. Zhang, L. Wu, M. Ji, B. Wang, Y. Kong, and J. Xu, “Structure and photoluminescence properties of KSr4(BO3)3:Eu3+ red-emitting phosphor,” Opt. Mater. Express2(1), 92–102 (2012).
[CrossRef]

H. Li, H. K. Yang, B. K. Moon, B. C. Choi, J. H. Jeong, K. Jang, H. S. Lee, and S. S. Yi, “Tunable photoluminescence properties of Eu(II)-and Sm(III)-coactivated Ca9Y(PO4)7 and energy transfer between Eu(II) and Sm(III),” Opt. Mater. Express2(4), 443–451 (2012).
[CrossRef]

S. K. K. Shaat, H. C. Swart, and O. M. Ntwaeaborwa, “Synthesis and characterization of white light emitting CaxSr1-xAl2O4:Tb3+,Eu3+ phosphor for solid state lighting,” Opt. Mater. Express2(7), 962–968 (2012).
[CrossRef]

S. Yamada, H. Emoto, M. Ibukiyama, and N. Hirosaki, “Properties of SiAlON powder phosphors for white LEDs,” J. Eur. Ceram. Soc.32(7), 1355–1358 (2012).
[CrossRef]

2011

B. Lei, K. Machida, T. Horikawa, and H. Hanzawa, “Preparation of (Sr0.5Ba0.5)Si2N2O2:Eu2+ phosphor and its luminescence properties,” Chem. Lett.40(2), 140–141 (2011).
[CrossRef]

Y. C. Fang, P.-C. Kao, Y.-C. Yang, and S.-Y. Chu, “Two-Step Synthesis of SrSi2O2N2: Eu2+ Green oxynitride phosphor: Electron-phonon coupling and thermal quenching behavior,” J. Electrochem. Soc.158(8), J246–J249 (2011).
[CrossRef]

L. X. Yang, X. Xu, L. Y. Hao, Y. F. Wang, L. J. Yin, X. F. Yang, W. He, and Q. X. Li, “Optimization mechanism of CaSi2O2N2: Eu2+ phosphor by La3+ ion doping,” J. Phys. D Appl. Phys.44(35), 355403 (2011).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(25), 251112 (2011).

Y. Taniasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 171111 (2011).

M. Zeuner, S. Pagano, and W. Schnick, “Nitridosilicates and oxonitridosilicates: from ceramic materials to structural and functional diversity,” Angew. Chem. Int. Ed. Engl.50(34), 7754–7775 (2011).
[CrossRef] [PubMed]

E. Rangel, E. Matioli, Y. S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, “Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes,” Appl. Phys. Lett.98(8), 081104 (2011).
[CrossRef]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, “Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography,” Nanoscale Res. Lett.6(1), 342 (2011).
[CrossRef] [PubMed]

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

H. J. Lee, K. P. Kim, D. W. Suh, and J. S. Yoo, “Tuning the optical properties of (Sr, Ba)3Si6O3N8:Eu phosphor for LED Application,” J. Electrochem. Soc.158(3), J66–J70 (2011).
[CrossRef]

S. E. Brinkley, N. Pfaff, K. A. Denault, Z. Zhang, H. T. (Bert) Hintzen, R. Seshadri, S. Nakamura, and S. P. DenBaars, “Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting,” Appl. Phys. Lett.99(24), 241106 (2011).
[CrossRef]

H.-C. Kuo, C.-W. Hung, H.-C. Chen, K.-J. Chen, C.-H. Wang, C.-W. Sher, C.-C. Yeh, C.-C. Lin, C.-H. Chen, and Y.-J. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express19(S4Suppl 4), A930–A936 (2011).
[CrossRef] [PubMed]

G. Anoop, K. P. Kim, D. W. Suh, I. H. Cho, and J. S. Yoo, “Optical characteristics of Sr2Si3O2N4:Eu2+ phosphor for white light emitting diodes,” Electrochem. Solid-State Lett.14(9), J58–J60 (2011).
[CrossRef]

M. Seibald, O. Oeckler, V. R. Celinski, P. J. Schmidt, A. Tucks, and W. Schnick, “Real structure and diffuse scattering of Sr0.5Ba0.5Si2O2N2:Eu2+ - A highly efficient yellow phosphor for pc-LEDs,” Solid State Sci.13(9), 1769–1778 (2011).
[CrossRef]

2010

Y. H. Song, W. J. Park, and D. H. Yoon, “Photoluminescence properties of Sr1–xSi2O2N2: Eu2+x as green to yellow-emitting phosphor for blue pumped white LEDs,” J. Phys. Chem. Solids71(4), 473–475 (2010).
[CrossRef]

X. Piao, K. Machida, T. Horikawa, and B. Yun, “Acetate reduction synthesis of Sr2Si5N8:Eu2+ phosphor and its luminescence properties,” J. Lumin.130(1), 8–12 (2010).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010).
[CrossRef]

2009

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron.15(4), 1066–1072 (2009).
[CrossRef]

V. Bachmann, C. Ronda, O. Oeckler, W. Schnick, and A. Meijerink, “Color point tuning for (Sr,Ca,Ba)Si2O2N2:Eu2+ for white light LEDs,” Chem. Mater.21(2), 316–325 (2009).
[CrossRef]

X. Song, R. Fu, S. Agathopoulos, H. He, X. Zhao, and S. Zhang, “Photoluminescence properties of Eu2+-activated CaSi2O2N2: Redshift and concentration quenching,” J. Appl. Phys.106(3), 033103 (2009).
[CrossRef]

J. A. Kechele, O. Oeckler, F. Stadler, and W. Schnick, “Structure elucidation of BaSi2O2N2 – A host lattice for rare-earth doped luminescent materials in phosphor-converted (pc)-LEDs,” Solid State Sci.11(2), 537–543 (2009).
[CrossRef]

2007

B.-G. Yun, Y. Miyamoto, and H. Yamamoto, “Luminescence properties of (Sr1 − uBau)Si2O2N2:Eu2+, yellow or orange phosphors for white LEDs, synthesized with (Sr1 − uBau)2SiO4:Eu2+ as a precursor,” J. Electrochem. Soc.154(10), J320–J325 (2007).
[CrossRef]

O. Oeckler, F. Stadler, T. Rosenthal, and W. Schnick, “Real structure of SrSi2O2N2,” Solid State Sci.9(2), 205–212 (2007).
[CrossRef]

N. Kimura, K. Sakuma, S. Hirafune, K. Asano, N. Hirosaki, and R. J. Xie, “Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode,” Appl. Phys. Lett.90(5), 051109 (2007).
[CrossRef]

R. J. Xie and N. Hirosaki, “Silicon-based oxynitride and nitride phosphors for white LEDs—A review,” Sci. Technol. Adv. Mater.8(7–8), 588–600 (2007).
[CrossRef]

2006

V. Bachmann, T. Justel, A. Meijerink, C. Ronda, and P. J. Schmidt, “Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions,” J. Lumin.121(2), 441–449 (2006).
[CrossRef]

2005

Y. Q. Li, A. C. A. Delsing, G. de With, and H. T. Hintzen, “Luminescence properties of Eu2+-activated alkaline-earth silicon-oxynitride MSi2O2-δN2+2/3δ (M = Ca, Sr, Ba): A promising class of novel LED Conversion phosphors,” Chem. Mater.17(12), 3242–3248 (2005).
[CrossRef]

P. Dorenbos, “Thermal quenching of Eu2+ 5d–4f luminescence in inorganic compounds,” J. Phys. Condens. Matter17(50), 8103–8111 (2005).
[CrossRef]

2004

A. Nag and T. R. N. Kutty, “The light induced valence change of europium in Sr2SiO4:Eu involving transient crystal structure,” J. Mater. Chem.14(10), 1598–1604 (2004).
[CrossRef]

Y. Q. Li, G. De With, and H. T. Hintzen, “Synthesis, structure, and luminescence properties of Eu2+ and Ce3+ activated BaYSi4N7,” J. Alloy. Comp.385(1–2), 1–11 (2004).
[CrossRef]

R. J. Xie, N. Hirosaki, K. Sakuma, Y. Yamamoto, and M. Mitomo, “Eu2+-doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodes,” Appl. Phys. Lett.84(26), 5404–5406 (2004).
[CrossRef]

Y. Q. Li, C. M. Fang, G. de With, and H. T. Hintzen, “Preparation, structure and photoluminescence properties of Eu2+ and Ce3+-doped SrYSi4N7,” J. Solid State Chem.177(12), 4687–4694 (2004).
[CrossRef]

K. Sakuma, K. Omichi, N. Kimura, M. Ohashi, D. Tanaka, N. Hirosaki, Y. Yamamoto, R.-J. Xie, and T. Suehiro, “Warm-white light-emitting diode with yellowish orange SiALON ceramic phosphor,” Opt. Lett.29(17), 2001–2003 (2004).
[CrossRef] [PubMed]

2003

M. Yamada, T. Naitou, K. Izuno, H. Tamaki, Y. Murazaki, M. Kameshima, and T. Mukai, “Red-Enhanced white-light-emitting diode using a new red Phosphor,” Jpn. J. Appl. Phys.42(Part 2, No.1A/B), L20–L23 (2003).
[CrossRef]

2002

W. H. van Krevel, J. W. T. van Rutten, H. Mandal, H. T. Hintzen, and R. Metselaar, “Luminescence Properties of Terbium-, Cerium-, or Europium-Doped α-Sialon Materials,” J. Solid State Chem.165(1), 19–24 (2002).
[CrossRef]

V. A. Gritsenko, R. W. M. Kwok, H. Wong, and J. B. Xu, “Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride,” J. Non-Cryst. Solids297(1), 96–101 (2002).
[CrossRef]

2000

J. W. H. van Krevel, H. T. Hintzen, and R. Metselaar, “On the Ce3+ luminescence in the melilite-type oxide nitride compound Y2Si3−xAlxO3+xN4−x,” Mater. Res. Bull.35(5), 747–754 (2000).
[CrossRef]

1998

J. W. H. van Krevel, H. T. Hintzen, R. Metselaar, and A. Meijerink, “Long Wavelength Ce3+ Emission in Y—Si—O—N Materials,” J. Alloy. Comp.268(1–2), 272–277 (1998).
[CrossRef]

1991

R. P. Vasquez, “X-ray photoelectron spectroscopy study of Sr and Ba compounds,” J. Electron. Spectrosc. Relat. Phemon.56(3), 217–240 (1991).
[CrossRef]

1983

T. L. Barr, “An XPS Study of Si as it Occurs in Adsorbents, Catalysts and Thin Films,” Appl. Surf. Sci.15(1–4), 1–35 (1983).
[CrossRef]

(Bert) Hintzen, H. T.

S. E. Brinkley, N. Pfaff, K. A. Denault, Z. Zhang, H. T. (Bert) Hintzen, R. Seshadri, S. Nakamura, and S. P. DenBaars, “Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting,” Appl. Phys. Lett.99(24), 241106 (2011).
[CrossRef]

Agathopoulos, S.

X. Song, R. Fu, S. Agathopoulos, H. He, X. Zhao, and S. Zhang, “Photoluminescence properties of Eu2+-activated CaSi2O2N2: Redshift and concentration quenching,” J. Appl. Phys.106(3), 033103 (2009).
[CrossRef]

Anoop, G.

G. Anoop, K. P. Kim, D. W. Suh, I. H. Cho, and J. S. Yoo, “Optical characteristics of Sr2Si3O2N4:Eu2+ phosphor for white light emitting diodes,” Electrochem. Solid-State Lett.14(9), J58–J60 (2011).
[CrossRef]

Asano, K.

N. Kimura, K. Sakuma, S. Hirafune, K. Asano, N. Hirosaki, and R. J. Xie, “Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode,” Appl. Phys. Lett.90(5), 051109 (2007).
[CrossRef]

Bachmann, V.

V. Bachmann, C. Ronda, O. Oeckler, W. Schnick, and A. Meijerink, “Color point tuning for (Sr,Ca,Ba)Si2O2N2:Eu2+ for white light LEDs,” Chem. Mater.21(2), 316–325 (2009).
[CrossRef]

V. Bachmann, T. Justel, A. Meijerink, C. Ronda, and P. J. Schmidt, “Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions,” J. Lumin.121(2), 441–449 (2006).
[CrossRef]

Barr, T. L.

T. L. Barr, “An XPS Study of Si as it Occurs in Adsorbents, Catalysts and Thin Films,” Appl. Surf. Sci.15(1–4), 1–35 (1983).
[CrossRef]

Biser, J. M.

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron.15(4), 1066–1072 (2009).
[CrossRef]

Brinkley, S. E.

S. E. Brinkley, N. Pfaff, K. A. Denault, Z. Zhang, H. T. (Bert) Hintzen, R. Seshadri, S. Nakamura, and S. P. DenBaars, “Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting,” Appl. Phys. Lett.99(24), 241106 (2011).
[CrossRef]

Cao, W.

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron.15(4), 1066–1072 (2009).
[CrossRef]

Celinski, V. R.

M. Seibald, O. Oeckler, V. R. Celinski, P. J. Schmidt, A. Tucks, and W. Schnick, “Real structure and diffuse scattering of Sr0.5Ba0.5Si2O2N2:Eu2+ - A highly efficient yellow phosphor for pc-LEDs,” Solid State Sci.13(9), 1769–1778 (2011).
[CrossRef]

Chan, H. M.

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron.15(4), 1066–1072 (2009).
[CrossRef]

Chen, C.-H.

Chen, H.-C.

Chen, K.-J.

Cheng, Y.-J.

Cho, I. H.

G. Anoop, K. P. Kim, D. W. Suh, I. H. Cho, and J. S. Yoo, “Optical characteristics of Sr2Si3O2N4:Eu2+ phosphor for white light emitting diodes,” Electrochem. Solid-State Lett.14(9), J58–J60 (2011).
[CrossRef]

Choi, B. C.

Choi, Y. S.

E. Rangel, E. Matioli, Y. S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, “Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes,” Appl. Phys. Lett.98(8), 081104 (2011).
[CrossRef]

Chu, S.-Y.

Y. C. Fang, P.-C. Kao, Y.-C. Yang, and S.-Y. Chu, “Two-Step Synthesis of SrSi2O2N2: Eu2+ Green oxynitride phosphor: Electron-phonon coupling and thermal quenching behavior,” J. Electrochem. Soc.158(8), J246–J249 (2011).
[CrossRef]

Dal Negro, L.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

de With, G.

Y. Q. Li, A. C. A. Delsing, G. de With, and H. T. Hintzen, “Luminescence properties of Eu2+-activated alkaline-earth silicon-oxynitride MSi2O2-δN2+2/3δ (M = Ca, Sr, Ba): A promising class of novel LED Conversion phosphors,” Chem. Mater.17(12), 3242–3248 (2005).
[CrossRef]

Y. Q. Li, C. M. Fang, G. de With, and H. T. Hintzen, “Preparation, structure and photoluminescence properties of Eu2+ and Ce3+-doped SrYSi4N7,” J. Solid State Chem.177(12), 4687–4694 (2004).
[CrossRef]

Y. Q. Li, G. De With, and H. T. Hintzen, “Synthesis, structure, and luminescence properties of Eu2+ and Ce3+ activated BaYSi4N7,” J. Alloy. Comp.385(1–2), 1–11 (2004).
[CrossRef]

Delsing, A. C. A.

Y. Q. Li, A. C. A. Delsing, G. de With, and H. T. Hintzen, “Luminescence properties of Eu2+-activated alkaline-earth silicon-oxynitride MSi2O2-δN2+2/3δ (M = Ca, Sr, Ba): A promising class of novel LED Conversion phosphors,” Chem. Mater.17(12), 3242–3248 (2005).
[CrossRef]

Denault, K. A.

S. E. Brinkley, N. Pfaff, K. A. Denault, Z. Zhang, H. T. (Bert) Hintzen, R. Seshadri, S. Nakamura, and S. P. DenBaars, “Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting,” Appl. Phys. Lett.99(24), 241106 (2011).
[CrossRef]

DenBaars, S. P.

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

S. E. Brinkley, N. Pfaff, K. A. Denault, Z. Zhang, H. T. (Bert) Hintzen, R. Seshadri, S. Nakamura, and S. P. DenBaars, “Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting,” Appl. Phys. Lett.99(24), 241106 (2011).
[CrossRef]

Dierolf, V.

Dorenbos, P.

P. Dorenbos, “Thermal quenching of Eu2+ 5d–4f luminescence in inorganic compounds,” J. Phys. Condens. Matter17(50), 8103–8111 (2005).
[CrossRef]

Ee, Y. K.

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron.15(4), 1066–1072 (2009).
[CrossRef]

Emoto, H.

S. Yamada, H. Emoto, M. Ibukiyama, and N. Hirosaki, “Properties of SiAlON powder phosphors for white LEDs,” J. Eur. Ceram. Soc.32(7), 1355–1358 (2012).
[CrossRef]

Fang, C. M.

Y. Q. Li, C. M. Fang, G. de With, and H. T. Hintzen, “Preparation, structure and photoluminescence properties of Eu2+ and Ce3+-doped SrYSi4N7,” J. Solid State Chem.177(12), 4687–4694 (2004).
[CrossRef]

Fang, Y. C.

Y. C. Fang, P.-C. Kao, Y.-C. Yang, and S.-Y. Chu, “Two-Step Synthesis of SrSi2O2N2: Eu2+ Green oxynitride phosphor: Electron-phonon coupling and thermal quenching behavior,” J. Electrochem. Soc.158(8), J246–J249 (2011).
[CrossRef]

Farrell, R. M.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

Feezell, D. F.

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

Francesco Pecora, E.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Fu, R.

X. Song, R. Fu, S. Agathopoulos, H. He, X. Zhao, and S. Zhang, “Photoluminescence properties of Eu2+-activated CaSi2O2N2: Redshift and concentration quenching,” J. Appl. Phys.106(3), 033103 (2009).
[CrossRef]

Fujito, K.

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

Gritsenko, V. A.

V. A. Gritsenko, R. W. M. Kwok, H. Wong, and J. B. Xu, “Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride,” J. Non-Cryst. Solids297(1), 96–101 (2002).
[CrossRef]

Hanzawa, H.

B. Lei, K. Machida, T. Horikawa, and H. Hanzawa, “Preparation of (Sr0.5Ba0.5)Si2N2O2:Eu2+ phosphor and its luminescence properties,” Chem. Lett.40(2), 140–141 (2011).
[CrossRef]

Hao, L. Y.

L. X. Yang, X. Xu, L. Y. Hao, Y. F. Wang, L. J. Yin, X. F. Yang, W. He, and Q. X. Li, “Optimization mechanism of CaSi2O2N2: Eu2+ phosphor by La3+ ion doping,” J. Phys. D Appl. Phys.44(35), 355403 (2011).
[CrossRef]

Hardy, M. T.

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

He, H.

X. Song, R. Fu, S. Agathopoulos, H. He, X. Zhao, and S. Zhang, “Photoluminescence properties of Eu2+-activated CaSi2O2N2: Redshift and concentration quenching,” J. Appl. Phys.106(3), 033103 (2009).
[CrossRef]

He, W.

L. X. Yang, X. Xu, L. Y. Hao, Y. F. Wang, L. J. Yin, X. F. Yang, W. He, and Q. X. Li, “Optimization mechanism of CaSi2O2N2: Eu2+ phosphor by La3+ ion doping,” J. Phys. D Appl. Phys.44(35), 355403 (2011).
[CrossRef]

Hintzen, H. T.

Y. Q. Li, A. C. A. Delsing, G. de With, and H. T. Hintzen, “Luminescence properties of Eu2+-activated alkaline-earth silicon-oxynitride MSi2O2-δN2+2/3δ (M = Ca, Sr, Ba): A promising class of novel LED Conversion phosphors,” Chem. Mater.17(12), 3242–3248 (2005).
[CrossRef]

Y. Q. Li, C. M. Fang, G. de With, and H. T. Hintzen, “Preparation, structure and photoluminescence properties of Eu2+ and Ce3+-doped SrYSi4N7,” J. Solid State Chem.177(12), 4687–4694 (2004).
[CrossRef]

Y. Q. Li, G. De With, and H. T. Hintzen, “Synthesis, structure, and luminescence properties of Eu2+ and Ce3+ activated BaYSi4N7,” J. Alloy. Comp.385(1–2), 1–11 (2004).
[CrossRef]

W. H. van Krevel, J. W. T. van Rutten, H. Mandal, H. T. Hintzen, and R. Metselaar, “Luminescence Properties of Terbium-, Cerium-, or Europium-Doped α-Sialon Materials,” J. Solid State Chem.165(1), 19–24 (2002).
[CrossRef]

J. W. H. van Krevel, H. T. Hintzen, and R. Metselaar, “On the Ce3+ luminescence in the melilite-type oxide nitride compound Y2Si3−xAlxO3+xN4−x,” Mater. Res. Bull.35(5), 747–754 (2000).
[CrossRef]

J. W. H. van Krevel, H. T. Hintzen, R. Metselaar, and A. Meijerink, “Long Wavelength Ce3+ Emission in Y—Si—O—N Materials,” J. Alloy. Comp.268(1–2), 272–277 (1998).
[CrossRef]

Hirafune, S.

N. Kimura, K. Sakuma, S. Hirafune, K. Asano, N. Hirosaki, and R. J. Xie, “Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode,” Appl. Phys. Lett.90(5), 051109 (2007).
[CrossRef]

Hirosaki, N.

S. Yamada, H. Emoto, M. Ibukiyama, and N. Hirosaki, “Properties of SiAlON powder phosphors for white LEDs,” J. Eur. Ceram. Soc.32(7), 1355–1358 (2012).
[CrossRef]

N. Kimura, K. Sakuma, S. Hirafune, K. Asano, N. Hirosaki, and R. J. Xie, “Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode,” Appl. Phys. Lett.90(5), 051109 (2007).
[CrossRef]

R. J. Xie and N. Hirosaki, “Silicon-based oxynitride and nitride phosphors for white LEDs—A review,” Sci. Technol. Adv. Mater.8(7–8), 588–600 (2007).
[CrossRef]

R. J. Xie, N. Hirosaki, K. Sakuma, Y. Yamamoto, and M. Mitomo, “Eu2+-doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodes,” Appl. Phys. Lett.84(26), 5404–5406 (2004).
[CrossRef]

K. Sakuma, K. Omichi, N. Kimura, M. Ohashi, D. Tanaka, N. Hirosaki, Y. Yamamoto, R.-J. Xie, and T. Suehiro, “Warm-white light-emitting diode with yellowish orange SiALON ceramic phosphor,” Opt. Lett.29(17), 2001–2003 (2004).
[CrossRef] [PubMed]

Horikawa, T.

B. Lei, K. Machida, T. Horikawa, and H. Hanzawa, “Preparation of (Sr0.5Ba0.5)Si2N2O2:Eu2+ phosphor and its luminescence properties,” Chem. Lett.40(2), 140–141 (2011).
[CrossRef]

X. Piao, K. Machida, T. Horikawa, and B. Yun, “Acetate reduction synthesis of Sr2Si5N8:Eu2+ phosphor and its luminescence properties,” J. Lumin.130(1), 8–12 (2010).
[CrossRef]

Hu, E. L.

E. Rangel, E. Matioli, Y. S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, “Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes,” Appl. Phys. Lett.98(8), 081104 (2011).
[CrossRef]

Hung, C.-W.

Ibukiyama, M.

S. Yamada, H. Emoto, M. Ibukiyama, and N. Hirosaki, “Properties of SiAlON powder phosphors for white LEDs,” J. Eur. Ceram. Soc.32(7), 1355–1358 (2012).
[CrossRef]

Izuno, K.

M. Yamada, T. Naitou, K. Izuno, H. Tamaki, Y. Murazaki, M. Kameshima, and T. Mukai, “Red-Enhanced white-light-emitting diode using a new red Phosphor,” Jpn. J. Appl. Phys.42(Part 2, No.1A/B), L20–L23 (2003).
[CrossRef]

Jang, K.

Jeong, J. H.

Ji, M.

Justel, T.

V. Bachmann, T. Justel, A. Meijerink, C. Ronda, and P. J. Schmidt, “Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions,” J. Lumin.121(2), 441–449 (2006).
[CrossRef]

Kameshima, M.

M. Yamada, T. Naitou, K. Izuno, H. Tamaki, Y. Murazaki, M. Kameshima, and T. Mukai, “Red-Enhanced white-light-emitting diode using a new red Phosphor,” Jpn. J. Appl. Phys.42(Part 2, No.1A/B), L20–L23 (2003).
[CrossRef]

Kao, P.-C.

Y. C. Fang, P.-C. Kao, Y.-C. Yang, and S.-Y. Chu, “Two-Step Synthesis of SrSi2O2N2: Eu2+ Green oxynitride phosphor: Electron-phonon coupling and thermal quenching behavior,” J. Electrochem. Soc.158(8), J246–J249 (2011).
[CrossRef]

Kasu, M.

Y. Taniasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 171111 (2011).

Kechele, J. A.

J. A. Kechele, O. Oeckler, F. Stadler, and W. Schnick, “Structure elucidation of BaSi2O2N2 – A host lattice for rare-earth doped luminescent materials in phosphor-converted (pc)-LEDs,” Solid State Sci.11(2), 537–543 (2009).
[CrossRef]

Kim, K. P.

G. Anoop, K. P. Kim, D. W. Suh, I. H. Cho, and J. S. Yoo, “Optical characteristics of Sr2Si3O2N4:Eu2+ phosphor for white light emitting diodes,” Electrochem. Solid-State Lett.14(9), J58–J60 (2011).
[CrossRef]

H. J. Lee, K. P. Kim, D. W. Suh, and J. S. Yoo, “Tuning the optical properties of (Sr, Ba)3Si6O3N8:Eu phosphor for LED Application,” J. Electrochem. Soc.158(3), J66–J70 (2011).
[CrossRef]

Kimura, N.

N. Kimura, K. Sakuma, S. Hirafune, K. Asano, N. Hirosaki, and R. J. Xie, “Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode,” Appl. Phys. Lett.90(5), 051109 (2007).
[CrossRef]

K. Sakuma, K. Omichi, N. Kimura, M. Ohashi, D. Tanaka, N. Hirosaki, Y. Yamamoto, R.-J. Xie, and T. Suehiro, “Warm-white light-emitting diode with yellowish orange SiALON ceramic phosphor,” Opt. Lett.29(17), 2001–2003 (2004).
[CrossRef] [PubMed]

Kong, Y.

Koslow, I.

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

Kuo, H.-C.

Kutty, T. R. N.

A. Nag and T. R. N. Kutty, “The light induced valence change of europium in Sr2SiO4:Eu involving transient crystal structure,” J. Mater. Chem.14(10), 1598–1604 (2004).
[CrossRef]

Kwok, R. W. M.

V. A. Gritsenko, R. W. M. Kwok, H. Wong, and J. B. Xu, “Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride,” J. Non-Cryst. Solids297(1), 96–101 (2002).
[CrossRef]

Lee, H. J.

H. J. Lee, K. P. Kim, D. W. Suh, and J. S. Yoo, “Tuning the optical properties of (Sr, Ba)3Si6O3N8:Eu phosphor for LED Application,” J. Electrochem. Soc.158(3), J66–J70 (2011).
[CrossRef]

Lee, H. S.

Lei, B.

B. Lei, K. Machida, T. Horikawa, and H. Hanzawa, “Preparation of (Sr0.5Ba0.5)Si2N2O2:Eu2+ phosphor and its luminescence properties,” Chem. Lett.40(2), 140–141 (2011).
[CrossRef]

Li, H.

Li, Q. X.

L. X. Yang, X. Xu, L. Y. Hao, Y. F. Wang, L. J. Yin, X. F. Yang, W. He, and Q. X. Li, “Optimization mechanism of CaSi2O2N2: Eu2+ phosphor by La3+ ion doping,” J. Phys. D Appl. Phys.44(35), 355403 (2011).
[CrossRef]

Li, Y. Q.

Y. Q. Li, A. C. A. Delsing, G. de With, and H. T. Hintzen, “Luminescence properties of Eu2+-activated alkaline-earth silicon-oxynitride MSi2O2-δN2+2/3δ (M = Ca, Sr, Ba): A promising class of novel LED Conversion phosphors,” Chem. Mater.17(12), 3242–3248 (2005).
[CrossRef]

Y. Q. Li, C. M. Fang, G. de With, and H. T. Hintzen, “Preparation, structure and photoluminescence properties of Eu2+ and Ce3+-doped SrYSi4N7,” J. Solid State Chem.177(12), 4687–4694 (2004).
[CrossRef]

Y. Q. Li, G. De With, and H. T. Hintzen, “Synthesis, structure, and luminescence properties of Eu2+ and Ce3+ activated BaYSi4N7,” J. Alloy. Comp.385(1–2), 1–11 (2004).
[CrossRef]

Lin, C.-C.

Liu, G.

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, “Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography,” Nanoscale Res. Lett.6(1), 342 (2011).
[CrossRef] [PubMed]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

Machida, K.

B. Lei, K. Machida, T. Horikawa, and H. Hanzawa, “Preparation of (Sr0.5Ba0.5)Si2N2O2:Eu2+ phosphor and its luminescence properties,” Chem. Lett.40(2), 140–141 (2011).
[CrossRef]

X. Piao, K. Machida, T. Horikawa, and B. Yun, “Acetate reduction synthesis of Sr2Si5N8:Eu2+ phosphor and its luminescence properties,” J. Lumin.130(1), 8–12 (2010).
[CrossRef]

Mandal, H.

W. H. van Krevel, J. W. T. van Rutten, H. Mandal, H. T. Hintzen, and R. Metselaar, “Luminescence Properties of Terbium-, Cerium-, or Europium-Doped α-Sialon Materials,” J. Solid State Chem.165(1), 19–24 (2002).
[CrossRef]

Matioli, E.

E. Rangel, E. Matioli, Y. S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, “Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes,” Appl. Phys. Lett.98(8), 081104 (2011).
[CrossRef]

Mawst, L. J.

G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, “Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography,” Nanoscale Res. Lett.6(1), 342 (2011).
[CrossRef] [PubMed]

Meijerink, A.

V. Bachmann, C. Ronda, O. Oeckler, W. Schnick, and A. Meijerink, “Color point tuning for (Sr,Ca,Ba)Si2O2N2:Eu2+ for white light LEDs,” Chem. Mater.21(2), 316–325 (2009).
[CrossRef]

V. Bachmann, T. Justel, A. Meijerink, C. Ronda, and P. J. Schmidt, “Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions,” J. Lumin.121(2), 441–449 (2006).
[CrossRef]

J. W. H. van Krevel, H. T. Hintzen, R. Metselaar, and A. Meijerink, “Long Wavelength Ce3+ Emission in Y—Si—O—N Materials,” J. Alloy. Comp.268(1–2), 272–277 (1998).
[CrossRef]

Metselaar, R.

W. H. van Krevel, J. W. T. van Rutten, H. Mandal, H. T. Hintzen, and R. Metselaar, “Luminescence Properties of Terbium-, Cerium-, or Europium-Doped α-Sialon Materials,” J. Solid State Chem.165(1), 19–24 (2002).
[CrossRef]

J. W. H. van Krevel, H. T. Hintzen, and R. Metselaar, “On the Ce3+ luminescence in the melilite-type oxide nitride compound Y2Si3−xAlxO3+xN4−x,” Mater. Res. Bull.35(5), 747–754 (2000).
[CrossRef]

J. W. H. van Krevel, H. T. Hintzen, R. Metselaar, and A. Meijerink, “Long Wavelength Ce3+ Emission in Y—Si—O—N Materials,” J. Alloy. Comp.268(1–2), 272–277 (1998).
[CrossRef]

Mitomo, M.

R. J. Xie, N. Hirosaki, K. Sakuma, Y. Yamamoto, and M. Mitomo, “Eu2+-doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodes,” Appl. Phys. Lett.84(26), 5404–5406 (2004).
[CrossRef]

Miyamoto, Y.

B.-G. Yun, Y. Miyamoto, and H. Yamamoto, “Luminescence properties of (Sr1 − uBau)Si2O2N2:Eu2+, yellow or orange phosphors for white LEDs, synthesized with (Sr1 − uBau)2SiO4:Eu2+ as a precursor,” J. Electrochem. Soc.154(10), J320–J325 (2007).
[CrossRef]

Moon, B. K.

Moustakas, T. D.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Mukai, T.

M. Yamada, T. Naitou, K. Izuno, H. Tamaki, Y. Murazaki, M. Kameshima, and T. Mukai, “Red-Enhanced white-light-emitting diode using a new red Phosphor,” Jpn. J. Appl. Phys.42(Part 2, No.1A/B), L20–L23 (2003).
[CrossRef]

Murazaki, Y.

M. Yamada, T. Naitou, K. Izuno, H. Tamaki, Y. Murazaki, M. Kameshima, and T. Mukai, “Red-Enhanced white-light-emitting diode using a new red Phosphor,” Jpn. J. Appl. Phys.42(Part 2, No.1A/B), L20–L23 (2003).
[CrossRef]

Nag, A.

A. Nag and T. R. N. Kutty, “The light induced valence change of europium in Sr2SiO4:Eu involving transient crystal structure,” J. Mater. Chem.14(10), 1598–1604 (2004).
[CrossRef]

Naitou, T.

M. Yamada, T. Naitou, K. Izuno, H. Tamaki, Y. Murazaki, M. Kameshima, and T. Mukai, “Red-Enhanced white-light-emitting diode using a new red Phosphor,” Jpn. J. Appl. Phys.42(Part 2, No.1A/B), L20–L23 (2003).
[CrossRef]

Nakamura, S.

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

S. E. Brinkley, N. Pfaff, K. A. Denault, Z. Zhang, H. T. (Bert) Hintzen, R. Seshadri, S. Nakamura, and S. P. DenBaars, “Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting,” Appl. Phys. Lett.99(24), 241106 (2011).
[CrossRef]

Ntwaeaborwa, O. M.

Oeckler, O.

M. Seibald, O. Oeckler, V. R. Celinski, P. J. Schmidt, A. Tucks, and W. Schnick, “Real structure and diffuse scattering of Sr0.5Ba0.5Si2O2N2:Eu2+ - A highly efficient yellow phosphor for pc-LEDs,” Solid State Sci.13(9), 1769–1778 (2011).
[CrossRef]

J. A. Kechele, O. Oeckler, F. Stadler, and W. Schnick, “Structure elucidation of BaSi2O2N2 – A host lattice for rare-earth doped luminescent materials in phosphor-converted (pc)-LEDs,” Solid State Sci.11(2), 537–543 (2009).
[CrossRef]

V. Bachmann, C. Ronda, O. Oeckler, W. Schnick, and A. Meijerink, “Color point tuning for (Sr,Ca,Ba)Si2O2N2:Eu2+ for white light LEDs,” Chem. Mater.21(2), 316–325 (2009).
[CrossRef]

O. Oeckler, F. Stadler, T. Rosenthal, and W. Schnick, “Real structure of SrSi2O2N2,” Solid State Sci.9(2), 205–212 (2007).
[CrossRef]

Ohashi, M.

Omichi, K.

Pagano, S.

M. Zeuner, S. Pagano, and W. Schnick, “Nitridosilicates and oxonitridosilicates: from ceramic materials to structural and functional diversity,” Angew. Chem. Int. Ed. Engl.50(34), 7754–7775 (2011).
[CrossRef] [PubMed]

Paiella, R.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Park, J. H.

G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, “Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography,” Nanoscale Res. Lett.6(1), 342 (2011).
[CrossRef] [PubMed]

Park, W. J.

Y. H. Song, W. J. Park, and D. H. Yoon, “Photoluminescence properties of Sr1–xSi2O2N2: Eu2+x as green to yellow-emitting phosphor for blue pumped white LEDs,” J. Phys. Chem. Solids71(4), 473–475 (2010).
[CrossRef]

Pfaff, N.

S. E. Brinkley, N. Pfaff, K. A. Denault, Z. Zhang, H. T. (Bert) Hintzen, R. Seshadri, S. Nakamura, and S. P. DenBaars, “Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting,” Appl. Phys. Lett.99(24), 241106 (2011).
[CrossRef]

Piao, X.

X. Piao, K. Machida, T. Horikawa, and B. Yun, “Acetate reduction synthesis of Sr2Si5N8:Eu2+ phosphor and its luminescence properties,” J. Lumin.130(1), 8–12 (2010).
[CrossRef]

Poplawsky, J. D.

Rangel, E.

E. Rangel, E. Matioli, Y. S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, “Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes,” Appl. Phys. Lett.98(8), 081104 (2011).
[CrossRef]

Romanov, A. E.

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

Ronda, C.

V. Bachmann, C. Ronda, O. Oeckler, W. Schnick, and A. Meijerink, “Color point tuning for (Sr,Ca,Ba)Si2O2N2:Eu2+ for white light LEDs,” Chem. Mater.21(2), 316–325 (2009).
[CrossRef]

V. Bachmann, T. Justel, A. Meijerink, C. Ronda, and P. J. Schmidt, “Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions,” J. Lumin.121(2), 441–449 (2006).
[CrossRef]

Rosenthal, T.

O. Oeckler, F. Stadler, T. Rosenthal, and W. Schnick, “Real structure of SrSi2O2N2,” Solid State Sci.9(2), 205–212 (2007).
[CrossRef]

Sakuma, K.

N. Kimura, K. Sakuma, S. Hirafune, K. Asano, N. Hirosaki, and R. J. Xie, “Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode,” Appl. Phys. Lett.90(5), 051109 (2007).
[CrossRef]

R. J. Xie, N. Hirosaki, K. Sakuma, Y. Yamamoto, and M. Mitomo, “Eu2+-doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodes,” Appl. Phys. Lett.84(26), 5404–5406 (2004).
[CrossRef]

K. Sakuma, K. Omichi, N. Kimura, M. Ohashi, D. Tanaka, N. Hirosaki, Y. Yamamoto, R.-J. Xie, and T. Suehiro, “Warm-white light-emitting diode with yellowish orange SiALON ceramic phosphor,” Opt. Lett.29(17), 2001–2003 (2004).
[CrossRef] [PubMed]

Schmidt, P. J.

M. Seibald, O. Oeckler, V. R. Celinski, P. J. Schmidt, A. Tucks, and W. Schnick, “Real structure and diffuse scattering of Sr0.5Ba0.5Si2O2N2:Eu2+ - A highly efficient yellow phosphor for pc-LEDs,” Solid State Sci.13(9), 1769–1778 (2011).
[CrossRef]

V. Bachmann, T. Justel, A. Meijerink, C. Ronda, and P. J. Schmidt, “Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions,” J. Lumin.121(2), 441–449 (2006).
[CrossRef]

Schnick, W.

M. Seibald, O. Oeckler, V. R. Celinski, P. J. Schmidt, A. Tucks, and W. Schnick, “Real structure and diffuse scattering of Sr0.5Ba0.5Si2O2N2:Eu2+ - A highly efficient yellow phosphor for pc-LEDs,” Solid State Sci.13(9), 1769–1778 (2011).
[CrossRef]

M. Zeuner, S. Pagano, and W. Schnick, “Nitridosilicates and oxonitridosilicates: from ceramic materials to structural and functional diversity,” Angew. Chem. Int. Ed. Engl.50(34), 7754–7775 (2011).
[CrossRef] [PubMed]

J. A. Kechele, O. Oeckler, F. Stadler, and W. Schnick, “Structure elucidation of BaSi2O2N2 – A host lattice for rare-earth doped luminescent materials in phosphor-converted (pc)-LEDs,” Solid State Sci.11(2), 537–543 (2009).
[CrossRef]

V. Bachmann, C. Ronda, O. Oeckler, W. Schnick, and A. Meijerink, “Color point tuning for (Sr,Ca,Ba)Si2O2N2:Eu2+ for white light LEDs,” Chem. Mater.21(2), 316–325 (2009).
[CrossRef]

O. Oeckler, F. Stadler, T. Rosenthal, and W. Schnick, “Real structure of SrSi2O2N2,” Solid State Sci.9(2), 205–212 (2007).
[CrossRef]

Seibald, M.

M. Seibald, O. Oeckler, V. R. Celinski, P. J. Schmidt, A. Tucks, and W. Schnick, “Real structure and diffuse scattering of Sr0.5Ba0.5Si2O2N2:Eu2+ - A highly efficient yellow phosphor for pc-LEDs,” Solid State Sci.13(9), 1769–1778 (2011).
[CrossRef]

Seshadri, R.

S. E. Brinkley, N. Pfaff, K. A. Denault, Z. Zhang, H. T. (Bert) Hintzen, R. Seshadri, S. Nakamura, and S. P. DenBaars, “Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting,” Appl. Phys. Lett.99(24), 241106 (2011).
[CrossRef]

Shaat, S. K. K.

Shan Hsu, P.

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

Sher, C.-W.

Smith, D. J.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Song, X.

X. Song, R. Fu, S. Agathopoulos, H. He, X. Zhao, and S. Zhang, “Photoluminescence properties of Eu2+-activated CaSi2O2N2: Redshift and concentration quenching,” J. Appl. Phys.106(3), 033103 (2009).
[CrossRef]

Song, Y. H.

Y. H. Song, W. J. Park, and D. H. Yoon, “Photoluminescence properties of Sr1–xSi2O2N2: Eu2+x as green to yellow-emitting phosphor for blue pumped white LEDs,” J. Phys. Chem. Solids71(4), 473–475 (2010).
[CrossRef]

Speck, J. S.

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

E. Rangel, E. Matioli, Y. S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, “Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes,” Appl. Phys. Lett.98(8), 081104 (2011).
[CrossRef]

Stadler, F.

J. A. Kechele, O. Oeckler, F. Stadler, and W. Schnick, “Structure elucidation of BaSi2O2N2 – A host lattice for rare-earth doped luminescent materials in phosphor-converted (pc)-LEDs,” Solid State Sci.11(2), 537–543 (2009).
[CrossRef]

O. Oeckler, F. Stadler, T. Rosenthal, and W. Schnick, “Real structure of SrSi2O2N2,” Solid State Sci.9(2), 205–212 (2007).
[CrossRef]

Suehiro, T.

Suh, D. W.

H. J. Lee, K. P. Kim, D. W. Suh, and J. S. Yoo, “Tuning the optical properties of (Sr, Ba)3Si6O3N8:Eu phosphor for LED Application,” J. Electrochem. Soc.158(3), J66–J70 (2011).
[CrossRef]

G. Anoop, K. P. Kim, D. W. Suh, I. H. Cho, and J. S. Yoo, “Optical characteristics of Sr2Si3O2N4:Eu2+ phosphor for white light emitting diodes,” Electrochem. Solid-State Lett.14(9), J58–J60 (2011).
[CrossRef]

Swart, H. C.

Tamaki, H.

M. Yamada, T. Naitou, K. Izuno, H. Tamaki, Y. Murazaki, M. Kameshima, and T. Mukai, “Red-Enhanced white-light-emitting diode using a new red Phosphor,” Jpn. J. Appl. Phys.42(Part 2, No.1A/B), L20–L23 (2003).
[CrossRef]

Tanaka, D.

Taniasu, Y.

Y. Taniasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 171111 (2011).

Tansu, N.

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(25), 251112 (2011).

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, “Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography,” Nanoscale Res. Lett.6(1), 342 (2011).
[CrossRef] [PubMed]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010).
[CrossRef]

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron.15(4), 1066–1072 (2009).
[CrossRef]

Tucks, A.

M. Seibald, O. Oeckler, V. R. Celinski, P. J. Schmidt, A. Tucks, and W. Schnick, “Real structure and diffuse scattering of Sr0.5Ba0.5Si2O2N2:Eu2+ - A highly efficient yellow phosphor for pc-LEDs,” Solid State Sci.13(9), 1769–1778 (2011).
[CrossRef]

van Krevel, J. W. H.

J. W. H. van Krevel, H. T. Hintzen, and R. Metselaar, “On the Ce3+ luminescence in the melilite-type oxide nitride compound Y2Si3−xAlxO3+xN4−x,” Mater. Res. Bull.35(5), 747–754 (2000).
[CrossRef]

J. W. H. van Krevel, H. T. Hintzen, R. Metselaar, and A. Meijerink, “Long Wavelength Ce3+ Emission in Y—Si—O—N Materials,” J. Alloy. Comp.268(1–2), 272–277 (1998).
[CrossRef]

van Krevel, W. H.

W. H. van Krevel, J. W. T. van Rutten, H. Mandal, H. T. Hintzen, and R. Metselaar, “Luminescence Properties of Terbium-, Cerium-, or Europium-Doped α-Sialon Materials,” J. Solid State Chem.165(1), 19–24 (2002).
[CrossRef]

van Rutten, J. W. T.

W. H. van Krevel, J. W. T. van Rutten, H. Mandal, H. T. Hintzen, and R. Metselaar, “Luminescence Properties of Terbium-, Cerium-, or Europium-Doped α-Sialon Materials,” J. Solid State Chem.165(1), 19–24 (2002).
[CrossRef]

Vasquez, R. P.

R. P. Vasquez, “X-ray photoelectron spectroscopy study of Sr and Ba compounds,” J. Electron. Spectrosc. Relat. Phemon.56(3), 217–240 (1991).
[CrossRef]

Vinci, R. P.

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron.15(4), 1066–1072 (2009).
[CrossRef]

Wang, B.

Wang, C.-H.

Wang, Y. F.

L. X. Yang, X. Xu, L. Y. Hao, Y. F. Wang, L. J. Yin, X. F. Yang, W. He, and Q. X. Li, “Optimization mechanism of CaSi2O2N2: Eu2+ phosphor by La3+ ion doping,” J. Phys. D Appl. Phys.44(35), 355403 (2011).
[CrossRef]

Weisbuch, C.

E. Rangel, E. Matioli, Y. S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, “Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes,” Appl. Phys. Lett.98(8), 081104 (2011).
[CrossRef]

Wong, H.

V. A. Gritsenko, R. W. M. Kwok, H. Wong, and J. B. Xu, “Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride,” J. Non-Cryst. Solids297(1), 96–101 (2002).
[CrossRef]

Wu, F.

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

Wu, L.

Xie, R. J.

N. Kimura, K. Sakuma, S. Hirafune, K. Asano, N. Hirosaki, and R. J. Xie, “Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode,” Appl. Phys. Lett.90(5), 051109 (2007).
[CrossRef]

R. J. Xie and N. Hirosaki, “Silicon-based oxynitride and nitride phosphors for white LEDs—A review,” Sci. Technol. Adv. Mater.8(7–8), 588–600 (2007).
[CrossRef]

R. J. Xie, N. Hirosaki, K. Sakuma, Y. Yamamoto, and M. Mitomo, “Eu2+-doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodes,” Appl. Phys. Lett.84(26), 5404–5406 (2004).
[CrossRef]

Xie, R.-J.

Xu, J.

Xu, J. B.

V. A. Gritsenko, R. W. M. Kwok, H. Wong, and J. B. Xu, “Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride,” J. Non-Cryst. Solids297(1), 96–101 (2002).
[CrossRef]

Xu, X.

L. X. Yang, X. Xu, L. Y. Hao, Y. F. Wang, L. J. Yin, X. F. Yang, W. He, and Q. X. Li, “Optimization mechanism of CaSi2O2N2: Eu2+ phosphor by La3+ ion doping,” J. Phys. D Appl. Phys.44(35), 355403 (2011).
[CrossRef]

Yamada, M.

M. Yamada, T. Naitou, K. Izuno, H. Tamaki, Y. Murazaki, M. Kameshima, and T. Mukai, “Red-Enhanced white-light-emitting diode using a new red Phosphor,” Jpn. J. Appl. Phys.42(Part 2, No.1A/B), L20–L23 (2003).
[CrossRef]

Yamada, S.

S. Yamada, H. Emoto, M. Ibukiyama, and N. Hirosaki, “Properties of SiAlON powder phosphors for white LEDs,” J. Eur. Ceram. Soc.32(7), 1355–1358 (2012).
[CrossRef]

Yamamoto, H.

B.-G. Yun, Y. Miyamoto, and H. Yamamoto, “Luminescence properties of (Sr1 − uBau)Si2O2N2:Eu2+, yellow or orange phosphors for white LEDs, synthesized with (Sr1 − uBau)2SiO4:Eu2+ as a precursor,” J. Electrochem. Soc.154(10), J320–J325 (2007).
[CrossRef]

Yamamoto, Y.

R. J. Xie, N. Hirosaki, K. Sakuma, Y. Yamamoto, and M. Mitomo, “Eu2+-doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodes,” Appl. Phys. Lett.84(26), 5404–5406 (2004).
[CrossRef]

K. Sakuma, K. Omichi, N. Kimura, M. Ohashi, D. Tanaka, N. Hirosaki, Y. Yamamoto, R.-J. Xie, and T. Suehiro, “Warm-white light-emitting diode with yellowish orange SiALON ceramic phosphor,” Opt. Lett.29(17), 2001–2003 (2004).
[CrossRef] [PubMed]

Yang, H. K.

Yang, L. X.

L. X. Yang, X. Xu, L. Y. Hao, Y. F. Wang, L. J. Yin, X. F. Yang, W. He, and Q. X. Li, “Optimization mechanism of CaSi2O2N2: Eu2+ phosphor by La3+ ion doping,” J. Phys. D Appl. Phys.44(35), 355403 (2011).
[CrossRef]

Yang, X. F.

L. X. Yang, X. Xu, L. Y. Hao, Y. F. Wang, L. J. Yin, X. F. Yang, W. He, and Q. X. Li, “Optimization mechanism of CaSi2O2N2: Eu2+ phosphor by La3+ ion doping,” J. Phys. D Appl. Phys.44(35), 355403 (2011).
[CrossRef]

Yang, Y.-C.

Y. C. Fang, P.-C. Kao, Y.-C. Yang, and S.-Y. Chu, “Two-Step Synthesis of SrSi2O2N2: Eu2+ Green oxynitride phosphor: Electron-phonon coupling and thermal quenching behavior,” J. Electrochem. Soc.158(8), J246–J249 (2011).
[CrossRef]

Yeh, C.-C.

Yi, S. S.

Yin, J.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Yin, L. J.

L. X. Yang, X. Xu, L. Y. Hao, Y. F. Wang, L. J. Yin, X. F. Yang, W. He, and Q. X. Li, “Optimization mechanism of CaSi2O2N2: Eu2+ phosphor by La3+ ion doping,” J. Phys. D Appl. Phys.44(35), 355403 (2011).
[CrossRef]

Yoo, J. S.

H. J. Lee, K. P. Kim, D. W. Suh, and J. S. Yoo, “Tuning the optical properties of (Sr, Ba)3Si6O3N8:Eu phosphor for LED Application,” J. Electrochem. Soc.158(3), J66–J70 (2011).
[CrossRef]

G. Anoop, K. P. Kim, D. W. Suh, I. H. Cho, and J. S. Yoo, “Optical characteristics of Sr2Si3O2N4:Eu2+ phosphor for white light emitting diodes,” Electrochem. Solid-State Lett.14(9), J58–J60 (2011).
[CrossRef]

Yoon, D. H.

Y. H. Song, W. J. Park, and D. H. Yoon, “Photoluminescence properties of Sr1–xSi2O2N2: Eu2+x as green to yellow-emitting phosphor for blue pumped white LEDs,” J. Phys. Chem. Solids71(4), 473–475 (2010).
[CrossRef]

Young, E. C.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

Yu. Nikiforov, A.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Yun, B.

X. Piao, K. Machida, T. Horikawa, and B. Yun, “Acetate reduction synthesis of Sr2Si5N8:Eu2+ phosphor and its luminescence properties,” J. Lumin.130(1), 8–12 (2010).
[CrossRef]

Yun, B.-G.

B.-G. Yun, Y. Miyamoto, and H. Yamamoto, “Luminescence properties of (Sr1 − uBau)Si2O2N2:Eu2+, yellow or orange phosphors for white LEDs, synthesized with (Sr1 − uBau)2SiO4:Eu2+ as a precursor,” J. Electrochem. Soc.154(10), J320–J325 (2007).
[CrossRef]

Zeuner, M.

M. Zeuner, S. Pagano, and W. Schnick, “Nitridosilicates and oxonitridosilicates: from ceramic materials to structural and functional diversity,” Angew. Chem. Int. Ed. Engl.50(34), 7754–7775 (2011).
[CrossRef] [PubMed]

Zhang, J.

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(25), 251112 (2011).

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, “Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography,” Nanoscale Res. Lett.6(1), 342 (2011).
[CrossRef] [PubMed]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010).
[CrossRef]

Zhang, S.

X. Song, R. Fu, S. Agathopoulos, H. He, X. Zhao, and S. Zhang, “Photoluminescence properties of Eu2+-activated CaSi2O2N2: Redshift and concentration quenching,” J. Appl. Phys.106(3), 033103 (2009).
[CrossRef]

Zhang, W.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Zhang, Y.

Zhang, Z.

S. E. Brinkley, N. Pfaff, K. A. Denault, Z. Zhang, H. T. (Bert) Hintzen, R. Seshadri, S. Nakamura, and S. P. DenBaars, “Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting,” Appl. Phys. Lett.99(24), 241106 (2011).
[CrossRef]

Zhao, H.

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(25), 251112 (2011).

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, “Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography,” Nanoscale Res. Lett.6(1), 342 (2011).
[CrossRef] [PubMed]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010).
[CrossRef]

Zhao, X.

X. Song, R. Fu, S. Agathopoulos, H. He, X. Zhao, and S. Zhang, “Photoluminescence properties of Eu2+-activated CaSi2O2N2: Redshift and concentration quenching,” J. Appl. Phys.106(3), 033103 (2009).
[CrossRef]

Zhou, L.

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

Angew. Chem. Int. Ed. Engl.

M. Zeuner, S. Pagano, and W. Schnick, “Nitridosilicates and oxonitridosilicates: from ceramic materials to structural and functional diversity,” Angew. Chem. Int. Ed. Engl.50(34), 7754–7775 (2011).
[CrossRef] [PubMed]

Appl. Phys. Lett.

P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer,” Appl. Phys. Lett.100(2), 021104 (2012).
[CrossRef]

E. Rangel, E. Matioli, Y. S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, “Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes,” Appl. Phys. Lett.98(8), 081104 (2011).
[CrossRef]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett.97(11), 111105 (2010).
[CrossRef]

J. Zhang, H. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett.98(25), 251112 (2011).

Y. Taniasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett.99(25), 171111 (2011).

E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett.100(6), 061111 (2012).
[CrossRef]

R. J. Xie, N. Hirosaki, K. Sakuma, Y. Yamamoto, and M. Mitomo, “Eu2+-doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodes,” Appl. Phys. Lett.84(26), 5404–5406 (2004).
[CrossRef]

N. Kimura, K. Sakuma, S. Hirafune, K. Asano, N. Hirosaki, and R. J. Xie, “Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode,” Appl. Phys. Lett.90(5), 051109 (2007).
[CrossRef]

S. E. Brinkley, N. Pfaff, K. A. Denault, Z. Zhang, H. T. (Bert) Hintzen, R. Seshadri, S. Nakamura, and S. P. DenBaars, “Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting,” Appl. Phys. Lett.99(24), 241106 (2011).
[CrossRef]

Appl. Surf. Sci.

T. L. Barr, “An XPS Study of Si as it Occurs in Adsorbents, Catalysts and Thin Films,” Appl. Surf. Sci.15(1–4), 1–35 (1983).
[CrossRef]

Chem. Lett.

B. Lei, K. Machida, T. Horikawa, and H. Hanzawa, “Preparation of (Sr0.5Ba0.5)Si2N2O2:Eu2+ phosphor and its luminescence properties,” Chem. Lett.40(2), 140–141 (2011).
[CrossRef]

Chem. Mater.

V. Bachmann, C. Ronda, O. Oeckler, W. Schnick, and A. Meijerink, “Color point tuning for (Sr,Ca,Ba)Si2O2N2:Eu2+ for white light LEDs,” Chem. Mater.21(2), 316–325 (2009).
[CrossRef]

Y. Q. Li, A. C. A. Delsing, G. de With, and H. T. Hintzen, “Luminescence properties of Eu2+-activated alkaline-earth silicon-oxynitride MSi2O2-δN2+2/3δ (M = Ca, Sr, Ba): A promising class of novel LED Conversion phosphors,” Chem. Mater.17(12), 3242–3248 (2005).
[CrossRef]

Electrochem. Solid-State Lett.

G. Anoop, K. P. Kim, D. W. Suh, I. H. Cho, and J. S. Yoo, “Optical characteristics of Sr2Si3O2N4:Eu2+ phosphor for white light emitting diodes,” Electrochem. Solid-State Lett.14(9), J58–J60 (2011).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron.15(4), 1066–1072 (2009).
[CrossRef]

J. Alloy. Comp.

J. W. H. van Krevel, H. T. Hintzen, R. Metselaar, and A. Meijerink, “Long Wavelength Ce3+ Emission in Y—Si—O—N Materials,” J. Alloy. Comp.268(1–2), 272–277 (1998).
[CrossRef]

Y. Q. Li, G. De With, and H. T. Hintzen, “Synthesis, structure, and luminescence properties of Eu2+ and Ce3+ activated BaYSi4N7,” J. Alloy. Comp.385(1–2), 1–11 (2004).
[CrossRef]

J. Appl. Phys.

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

X. Song, R. Fu, S. Agathopoulos, H. He, X. Zhao, and S. Zhang, “Photoluminescence properties of Eu2+-activated CaSi2O2N2: Redshift and concentration quenching,” J. Appl. Phys.106(3), 033103 (2009).
[CrossRef]

J. Electrochem. Soc.

B.-G. Yun, Y. Miyamoto, and H. Yamamoto, “Luminescence properties of (Sr1 − uBau)Si2O2N2:Eu2+, yellow or orange phosphors for white LEDs, synthesized with (Sr1 − uBau)2SiO4:Eu2+ as a precursor,” J. Electrochem. Soc.154(10), J320–J325 (2007).
[CrossRef]

Y. C. Fang, P.-C. Kao, Y.-C. Yang, and S.-Y. Chu, “Two-Step Synthesis of SrSi2O2N2: Eu2+ Green oxynitride phosphor: Electron-phonon coupling and thermal quenching behavior,” J. Electrochem. Soc.158(8), J246–J249 (2011).
[CrossRef]

H. J. Lee, K. P. Kim, D. W. Suh, and J. S. Yoo, “Tuning the optical properties of (Sr, Ba)3Si6O3N8:Eu phosphor for LED Application,” J. Electrochem. Soc.158(3), J66–J70 (2011).
[CrossRef]

J. Electron. Spectrosc. Relat. Phemon.

R. P. Vasquez, “X-ray photoelectron spectroscopy study of Sr and Ba compounds,” J. Electron. Spectrosc. Relat. Phemon.56(3), 217–240 (1991).
[CrossRef]

J. Eur. Ceram. Soc.

S. Yamada, H. Emoto, M. Ibukiyama, and N. Hirosaki, “Properties of SiAlON powder phosphors for white LEDs,” J. Eur. Ceram. Soc.32(7), 1355–1358 (2012).
[CrossRef]

J. Lumin.

X. Piao, K. Machida, T. Horikawa, and B. Yun, “Acetate reduction synthesis of Sr2Si5N8:Eu2+ phosphor and its luminescence properties,” J. Lumin.130(1), 8–12 (2010).
[CrossRef]

V. Bachmann, T. Justel, A. Meijerink, C. Ronda, and P. J. Schmidt, “Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions,” J. Lumin.121(2), 441–449 (2006).
[CrossRef]

J. Mater. Chem.

A. Nag and T. R. N. Kutty, “The light induced valence change of europium in Sr2SiO4:Eu involving transient crystal structure,” J. Mater. Chem.14(10), 1598–1604 (2004).
[CrossRef]

J. Non-Cryst. Solids

V. A. Gritsenko, R. W. M. Kwok, H. Wong, and J. B. Xu, “Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride,” J. Non-Cryst. Solids297(1), 96–101 (2002).
[CrossRef]

J. Phys. Chem. Solids

Y. H. Song, W. J. Park, and D. H. Yoon, “Photoluminescence properties of Sr1–xSi2O2N2: Eu2+x as green to yellow-emitting phosphor for blue pumped white LEDs,” J. Phys. Chem. Solids71(4), 473–475 (2010).
[CrossRef]

J. Phys. Condens. Matter

P. Dorenbos, “Thermal quenching of Eu2+ 5d–4f luminescence in inorganic compounds,” J. Phys. Condens. Matter17(50), 8103–8111 (2005).
[CrossRef]

J. Phys. D Appl. Phys.

L. X. Yang, X. Xu, L. Y. Hao, Y. F. Wang, L. J. Yin, X. F. Yang, W. He, and Q. X. Li, “Optimization mechanism of CaSi2O2N2: Eu2+ phosphor by La3+ ion doping,” J. Phys. D Appl. Phys.44(35), 355403 (2011).
[CrossRef]

J. Solid State Chem.

Y. Q. Li, C. M. Fang, G. de With, and H. T. Hintzen, “Preparation, structure and photoluminescence properties of Eu2+ and Ce3+-doped SrYSi4N7,” J. Solid State Chem.177(12), 4687–4694 (2004).
[CrossRef]

W. H. van Krevel, J. W. T. van Rutten, H. Mandal, H. T. Hintzen, and R. Metselaar, “Luminescence Properties of Terbium-, Cerium-, or Europium-Doped α-Sialon Materials,” J. Solid State Chem.165(1), 19–24 (2002).
[CrossRef]

Jpn. J. Appl. Phys.

M. Yamada, T. Naitou, K. Izuno, H. Tamaki, Y. Murazaki, M. Kameshima, and T. Mukai, “Red-Enhanced white-light-emitting diode using a new red Phosphor,” Jpn. J. Appl. Phys.42(Part 2, No.1A/B), L20–L23 (2003).
[CrossRef]

Mater. Res. Bull.

J. W. H. van Krevel, H. T. Hintzen, and R. Metselaar, “On the Ce3+ luminescence in the melilite-type oxide nitride compound Y2Si3−xAlxO3+xN4−x,” Mater. Res. Bull.35(5), 747–754 (2000).
[CrossRef]

Nanoscale Res. Lett.

G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, “Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography,” Nanoscale Res. Lett.6(1), 342 (2011).
[CrossRef] [PubMed]

Opt. Express

Opt. Lett.

Opt. Mater. Express

Sci. Technol. Adv. Mater.

R. J. Xie and N. Hirosaki, “Silicon-based oxynitride and nitride phosphors for white LEDs—A review,” Sci. Technol. Adv. Mater.8(7–8), 588–600 (2007).
[CrossRef]

Semicond. Sci. Technol.

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012).
[CrossRef]

Solid State Sci.

O. Oeckler, F. Stadler, T. Rosenthal, and W. Schnick, “Real structure of SrSi2O2N2,” Solid State Sci.9(2), 205–212 (2007).
[CrossRef]

J. A. Kechele, O. Oeckler, F. Stadler, and W. Schnick, “Structure elucidation of BaSi2O2N2 – A host lattice for rare-earth doped luminescent materials in phosphor-converted (pc)-LEDs,” Solid State Sci.11(2), 537–543 (2009).
[CrossRef]

M. Seibald, O. Oeckler, V. R. Celinski, P. J. Schmidt, A. Tucks, and W. Schnick, “Real structure and diffuse scattering of Sr0.5Ba0.5Si2O2N2:Eu2+ - A highly efficient yellow phosphor for pc-LEDs,” Solid State Sci.13(9), 1769–1778 (2011).
[CrossRef]

Other

R. J. Xie, Y. Q. Li, N. Hirosaki, and H. Yamamoto, Nitride Phosphors and Solid State Lighting (CRC Press, Taylor and Francis, 2011), Chap. 4.

G. Blasse and B. C. Grabmaier, Luminescent Materials (Springer, 1994).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (12)

Fig. 1
Fig. 1

Experimental set up for photo-stability studies.

Fig. 2
Fig. 2

XRD patterns of Sr1-xBaxSi2O2N2:Eu2+ (x = 0.40) phosphor baked at various temperatures.

Fig. 3
Fig. 3

PL emission spectra of Sr1-xBaxSi2O2N2:Eu2+(x = 0.40) phosphor baked at various temperatures. (λexc = 450 nm).

Fig. 4
Fig. 4

PL excitation spectra of Sr1-xBaxSi2O2N2:Eu2+(x = 0.40) phosphor baked at various temperatures (λem = 560 nm).

Fig. 5
Fig. 5

Variation in CIE coordinates of PL emissions from Sr1-xBaxSi2O2N2:Eu2+(x = 0.40) phosphor baked at various temperatures.

Fig. 6
Fig. 6

O1S XPS spectra of Sr1-xBaxSi2O2N2:Eu2+(x = 0.40) phosphor baked at various temperatures.

Fig. 7
Fig. 7

Si2p XPS spectra of Sr1-xBaxSi2O2N2:Eu2+(x = 0.40) phosphor baked at various temperatures.

Fig. 8
Fig. 8

Variation in luminescence of Sr1-xBaxSi2O2N2:Eu2+(x = 0 and x = 0.40) phosphor at various laser fluxes.

Fig. 9
Fig. 9

Luminescence of Sr1-xBaxSi2O2N2:Eu2+(x = 0 and x = 0.40) phosphor at various higher laser fluxes.

Fig. 10
Fig. 10

(a) CIE coordinates of fabricated w-LEDs (b) variation of CIE(x) coordinate with luminescent intensity for various devices fabricated.

Fig. 11
Fig. 11

Variation of EL emission from the fabricated w-LEDs with time (a) at 85 °C (b) at 85 °C and 85% relative humidity.

Fig. 12
Fig. 12

(a) Schematic diagram of thermally assisted photo-ionization in Sr1-xBaxSi2O2N2:Eu2+(x = 0.40) phosphor (b) The XRD pattern of aged and fresh phosphor.

Tables (2)

Tables Icon

Table 1 The fitting parameters of the O 1S XPS peak at various temperatures

Tables Icon

Table 2 The LED package parameters of Sr1-xBaxSi2O2N2:Eu0.072+ phosphors

Metrics