Abstract

Methods for growing periodically alternating polarities of GaN on GaN substrates have been developed. The resulting periodically oriented samples demonstrate feasibility of using this method to produce structures of utility in optical parametric generation.

© 2012 OSA

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References

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  1. D. S. Hum and M. M. Fejer, “Quasi-phase matching,” C. R. Phys.8(2), 180–198 (2007).
    [CrossRef]
  2. L. Arizmendi, “Photonic applications of lithium niobate crystals,” Phys. Status Solidi A201(2), 253–283 (2004).
    [CrossRef]
  3. C. Kieleck, A. Hildenbrand, M. Eichhorn, D. Faye, E. Lallier, B. Gérard, and S. D. Jackson, “OP-GaAs OPO pumped by 2μm Q-switched lasers: Tm;Ho:Silica fiber laser and Ho:YAG laser,” Proc. SPIE7836, 783607 (2010).
    [CrossRef]
  4. E. B. Petersen, W. Shi, A. Chavez-Pirson, N. Peyghambarian, and A. T. Cooney, “Efficient parametric terahertz generation in quasi-phase-matched GaP through cavity enhanced difference-frequency generation,” Appl. Phys. Lett.98(12), 121119 (2011).
    [CrossRef]
  5. M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001).
    [CrossRef]
  6. A. Jeżowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, and T. Paszkiewicz, “Thermal conductivity of GaN crystals in 4.2–300 K range,” Solid State Commun.128(2-3), 69–73 (2003).
    [CrossRef]
  7. J. Miragliotta, D. K. Wickenden, T. J. Kistenmacher, and W. A. Bryden, “Linear- and nonlinear-optical properties of GaN thin films,” J. Opt. Soc. Am. B10(8), 1447–1456 (1993).
    [CrossRef]
  8. M. Abe, H. Sato, I. Shoji, J. Suda, M. Yoshimura, Y. Kitaoka, Y. Mori, and T. Kondo, “Accurate measurement of quadratic nonlinear-optical coefficients of gallium nitride,” J. Opt. Soc. Am. B27(10), 2026–2034 (2010).
    [CrossRef]
  9. A. Chowdhury, H. M. Ng, M. Bhardwaj, and N. G. Weimann, “Second-harmonic generation in periodically poled GaN,” Appl. Phys. Lett.83(6), 1077–1079 (2003).
    [CrossRef]
  10. C. Xiong, W. Pernice, K. K. Ryu, C. Schuck, K. Y. Fong, T. Palacios, and H. X. Tang, “Integrated GaN photonic circuits on silicon (100) for second harmonic generation,” Opt. Express19(11), 10462–10470 (2011).
    [CrossRef] [PubMed]
  11. T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
    [CrossRef]
  12. M. Welna, R. Kudrawiec, M. Motyka, R. Kucharski, M. Zając, M. Rudziński, J. Misiewicz, R. Doradziński, and R. Dwiliński, “Transparency of GaN substrates in the mid-infrared spectral range,” Cryst. Res. Technol.47(3), 347–350 (2012).
    [CrossRef]
  13. V. Gavrilenko and R. Wu, “Second harmonic generation of GaN (0001),” Phys. Rev. B65(3), 035405 (2001).
    [CrossRef]
  14. J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
    [CrossRef]
  15. J. P. Long, B. S. Simpkins, D. J. Rowenhorst, and P. E. Pehrsson, “Far-field imaging of optical second-harmonic generation in single GaN nanowires,” Nano Lett.7(3), 831–836 (2007).
    [CrossRef] [PubMed]
  16. S. Mita, R. Collazo, and Z. Sitar, “Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition,” J. Cryst. Growth311(10), 3044–3048 (2009).
    [CrossRef]
  17. R. Katayama, Y. Kuge, K. Onabe, T. Matsushita, and T. Kondo, “Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate,” Appl. Phys. Lett.89(23), 231910 (2006).
    [CrossRef]
  18. F. A. Ponce, GaN and Related Materials, S. J. Pearton, ed. (Amsterdam, The Netherlands: Gordon and Breach Science Publishers, 1997), pp. 141–170.
  19. K. Hiramatsu, T. Detchprohm, and I. Akasaki, “Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy,” Jpn. J. Appl. Phys.32(Part 1, No. 4), 1528–1533 (1993).
    [CrossRef]
  20. J. Yang, G. J. Brown, M. Dutta, and M. A. Stroscio, “Photon absorption in the Restrahlen band of thin films of GaN and AlN: two phonon effects,” J. Appl. Phys.98(4), 043517 (2005).
    [CrossRef]
  21. J. K. Hite, M. E. Twigg, M. A. Mastro, C. R. Eddy, and F. J. Kub, “Initiating polarity inversion in GaN growth using an AlN interlayer,” Phys. Status Solidi A208(7), 1504–1506 (2011).
    [CrossRef]
  22. J. K. Hite, N. D. Bassim, M. E. Twigg, M. A. Mastro, F. J. Kub, and C. R. Eddy., “GaN vertical and lateral polarity heterostructures on GaN substrates,” J. Cryst. Growth332(1), 43–47 (2011).
    [CrossRef]
  23. S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, “Modeling of threading dislocation reduction in growing GaN layers,” Phys. Status Solidi A179(1), 125–145 (2000).
    [CrossRef]
  24. F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, and J. Likonen, “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN,” Appl. Phys. Lett.86(3), 031915 (2005).
    [CrossRef]
  25. R. Geiss, A. Chowdhury, C. M. Staus, H. M. Ng, S. S. Park, and J. Y. Han, “Low loss GaN at 1550 nm,” Appl. Phys. Lett.87(13), 132107 (2005).
    [CrossRef]

2012

M. Welna, R. Kudrawiec, M. Motyka, R. Kucharski, M. Zając, M. Rudziński, J. Misiewicz, R. Doradziński, and R. Dwiliński, “Transparency of GaN substrates in the mid-infrared spectral range,” Cryst. Res. Technol.47(3), 347–350 (2012).
[CrossRef]

2011

C. Xiong, W. Pernice, K. K. Ryu, C. Schuck, K. Y. Fong, T. Palacios, and H. X. Tang, “Integrated GaN photonic circuits on silicon (100) for second harmonic generation,” Opt. Express19(11), 10462–10470 (2011).
[CrossRef] [PubMed]

E. B. Petersen, W. Shi, A. Chavez-Pirson, N. Peyghambarian, and A. T. Cooney, “Efficient parametric terahertz generation in quasi-phase-matched GaP through cavity enhanced difference-frequency generation,” Appl. Phys. Lett.98(12), 121119 (2011).
[CrossRef]

J. K. Hite, M. E. Twigg, M. A. Mastro, C. R. Eddy, and F. J. Kub, “Initiating polarity inversion in GaN growth using an AlN interlayer,” Phys. Status Solidi A208(7), 1504–1506 (2011).
[CrossRef]

J. K. Hite, N. D. Bassim, M. E. Twigg, M. A. Mastro, F. J. Kub, and C. R. Eddy., “GaN vertical and lateral polarity heterostructures on GaN substrates,” J. Cryst. Growth332(1), 43–47 (2011).
[CrossRef]

2010

M. Abe, H. Sato, I. Shoji, J. Suda, M. Yoshimura, Y. Kitaoka, Y. Mori, and T. Kondo, “Accurate measurement of quadratic nonlinear-optical coefficients of gallium nitride,” J. Opt. Soc. Am. B27(10), 2026–2034 (2010).
[CrossRef]

C. Kieleck, A. Hildenbrand, M. Eichhorn, D. Faye, E. Lallier, B. Gérard, and S. D. Jackson, “OP-GaAs OPO pumped by 2μm Q-switched lasers: Tm;Ho:Silica fiber laser and Ho:YAG laser,” Proc. SPIE7836, 783607 (2010).
[CrossRef]

2009

S. Mita, R. Collazo, and Z. Sitar, “Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition,” J. Cryst. Growth311(10), 3044–3048 (2009).
[CrossRef]

2007

D. S. Hum and M. M. Fejer, “Quasi-phase matching,” C. R. Phys.8(2), 180–198 (2007).
[CrossRef]

J. P. Long, B. S. Simpkins, D. J. Rowenhorst, and P. E. Pehrsson, “Far-field imaging of optical second-harmonic generation in single GaN nanowires,” Nano Lett.7(3), 831–836 (2007).
[CrossRef] [PubMed]

2006

R. Katayama, Y. Kuge, K. Onabe, T. Matsushita, and T. Kondo, “Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate,” Appl. Phys. Lett.89(23), 231910 (2006).
[CrossRef]

2005

J. Yang, G. J. Brown, M. Dutta, and M. A. Stroscio, “Photon absorption in the Restrahlen band of thin films of GaN and AlN: two phonon effects,” J. Appl. Phys.98(4), 043517 (2005).
[CrossRef]

F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, and J. Likonen, “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN,” Appl. Phys. Lett.86(3), 031915 (2005).
[CrossRef]

R. Geiss, A. Chowdhury, C. M. Staus, H. M. Ng, S. S. Park, and J. Y. Han, “Low loss GaN at 1550 nm,” Appl. Phys. Lett.87(13), 132107 (2005).
[CrossRef]

2004

L. Arizmendi, “Photonic applications of lithium niobate crystals,” Phys. Status Solidi A201(2), 253–283 (2004).
[CrossRef]

2003

A. Chowdhury, H. M. Ng, M. Bhardwaj, and N. G. Weimann, “Second-harmonic generation in periodically poled GaN,” Appl. Phys. Lett.83(6), 1077–1079 (2003).
[CrossRef]

A. Jeżowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, and T. Paszkiewicz, “Thermal conductivity of GaN crystals in 4.2–300 K range,” Solid State Commun.128(2-3), 69–73 (2003).
[CrossRef]

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
[CrossRef]

2001

V. Gavrilenko and R. Wu, “Second harmonic generation of GaN (0001),” Phys. Rev. B65(3), 035405 (2001).
[CrossRef]

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001).
[CrossRef]

2000

S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, “Modeling of threading dislocation reduction in growing GaN layers,” Phys. Status Solidi A179(1), 125–145 (2000).
[CrossRef]

1993

J. Miragliotta, D. K. Wickenden, T. J. Kistenmacher, and W. A. Bryden, “Linear- and nonlinear-optical properties of GaN thin films,” J. Opt. Soc. Am. B10(8), 1447–1456 (1993).
[CrossRef]

K. Hiramatsu, T. Detchprohm, and I. Akasaki, “Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy,” Jpn. J. Appl. Phys.32(Part 1, No. 4), 1528–1533 (1993).
[CrossRef]

Abe, M.

Akasaki, I.

K. Hiramatsu, T. Detchprohm, and I. Akasaki, “Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy,” Jpn. J. Appl. Phys.32(Part 1, No. 4), 1528–1533 (1993).
[CrossRef]

Albert, J. P.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Ambacher, O.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001).
[CrossRef]

Arizmendi, L.

L. Arizmendi, “Photonic applications of lithium niobate crystals,” Phys. Status Solidi A201(2), 253–283 (2004).
[CrossRef]

Aulombard, R. L.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Bassim, N. D.

J. K. Hite, N. D. Bassim, M. E. Twigg, M. A. Mastro, F. J. Kub, and C. R. Eddy., “GaN vertical and lateral polarity heterostructures on GaN substrates,” J. Cryst. Growth332(1), 43–47 (2011).
[CrossRef]

Becouarn, L.

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
[CrossRef]

Beltz, G. E.

S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, “Modeling of threading dislocation reduction in growing GaN layers,” Phys. Status Solidi A179(1), 125–145 (2000).
[CrossRef]

Bhardwaj, M.

A. Chowdhury, H. M. Ng, M. Bhardwaj, and N. G. Weimann, “Second-harmonic generation in periodically poled GaN,” Appl. Phys. Lett.83(6), 1077–1079 (2003).
[CrossRef]

Bockowski, M.

A. Jeżowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, and T. Paszkiewicz, “Thermal conductivity of GaN crystals in 4.2–300 K range,” Solid State Commun.128(2-3), 69–73 (2003).
[CrossRef]

Briot, O.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Brown, G. J.

J. Yang, G. J. Brown, M. Dutta, and M. A. Stroscio, “Photon absorption in the Restrahlen band of thin films of GaN and AlN: two phonon effects,” J. Appl. Phys.98(4), 043517 (2005).
[CrossRef]

Bryden, W. A.

Cassagne, D.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Centeno, E.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Chavez-Pirson, A.

E. B. Petersen, W. Shi, A. Chavez-Pirson, N. Peyghambarian, and A. T. Cooney, “Efficient parametric terahertz generation in quasi-phase-matched GaP through cavity enhanced difference-frequency generation,” Appl. Phys. Lett.98(12), 121119 (2011).
[CrossRef]

Chen, L. F.

S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, “Modeling of threading dislocation reduction in growing GaN layers,” Phys. Status Solidi A179(1), 125–145 (2000).
[CrossRef]

Chen, Y.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Chowdhury, A.

R. Geiss, A. Chowdhury, C. M. Staus, H. M. Ng, S. S. Park, and J. Y. Han, “Low loss GaN at 1550 nm,” Appl. Phys. Lett.87(13), 132107 (2005).
[CrossRef]

A. Chowdhury, H. M. Ng, M. Bhardwaj, and N. G. Weimann, “Second-harmonic generation in periodically poled GaN,” Appl. Phys. Lett.83(6), 1077–1079 (2003).
[CrossRef]

Collazo, R.

S. Mita, R. Collazo, and Z. Sitar, “Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition,” J. Cryst. Growth311(10), 3044–3048 (2009).
[CrossRef]

Cooney, A. T.

E. B. Petersen, W. Shi, A. Chavez-Pirson, N. Peyghambarian, and A. T. Cooney, “Efficient parametric terahertz generation in quasi-phase-matched GaP through cavity enhanced difference-frequency generation,” Appl. Phys. Lett.98(12), 121119 (2011).
[CrossRef]

Coquillat, D.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Danilchenko, B. A.

A. Jeżowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, and T. Paszkiewicz, “Thermal conductivity of GaN crystals in 4.2–300 K range,” Solid State Commun.128(2-3), 69–73 (2003).
[CrossRef]

Detchprohm, T.

K. Hiramatsu, T. Detchprohm, and I. Akasaki, “Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy,” Jpn. J. Appl. Phys.32(Part 1, No. 4), 1528–1533 (1993).
[CrossRef]

Dimitrov, R.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001).
[CrossRef]

Doradzinski, R.

M. Welna, R. Kudrawiec, M. Motyka, R. Kucharski, M. Zając, M. Rudziński, J. Misiewicz, R. Doradziński, and R. Dwiliński, “Transparency of GaN substrates in the mid-infrared spectral range,” Cryst. Res. Technol.47(3), 347–350 (2012).
[CrossRef]

Dutta, M.

J. Yang, G. J. Brown, M. Dutta, and M. A. Stroscio, “Photon absorption in the Restrahlen band of thin films of GaN and AlN: two phonon effects,” J. Appl. Phys.98(4), 043517 (2005).
[CrossRef]

Dwilinski, R.

M. Welna, R. Kudrawiec, M. Motyka, R. Kucharski, M. Zając, M. Rudziński, J. Misiewicz, R. Doradziński, and R. Dwiliński, “Transparency of GaN substrates in the mid-infrared spectral range,” Cryst. Res. Technol.47(3), 347–350 (2012).
[CrossRef]

Eddy, C. R.

J. K. Hite, N. D. Bassim, M. E. Twigg, M. A. Mastro, F. J. Kub, and C. R. Eddy., “GaN vertical and lateral polarity heterostructures on GaN substrates,” J. Cryst. Growth332(1), 43–47 (2011).
[CrossRef]

J. K. Hite, M. E. Twigg, M. A. Mastro, C. R. Eddy, and F. J. Kub, “Initiating polarity inversion in GaN growth using an AlN interlayer,” Phys. Status Solidi A208(7), 1504–1506 (2011).
[CrossRef]

Eichhorn, M.

C. Kieleck, A. Hildenbrand, M. Eichhorn, D. Faye, E. Lallier, B. Gérard, and S. D. Jackson, “OP-GaAs OPO pumped by 2μm Q-switched lasers: Tm;Ho:Silica fiber laser and Ho:YAG laser,” Proc. SPIE7836, 783607 (2010).
[CrossRef]

Eickhoff, M.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001).
[CrossRef]

Eyres, L. A.

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
[CrossRef]

Faye, D.

C. Kieleck, A. Hildenbrand, M. Eichhorn, D. Faye, E. Lallier, B. Gérard, and S. D. Jackson, “OP-GaAs OPO pumped by 2μm Q-switched lasers: Tm;Ho:Silica fiber laser and Ho:YAG laser,” Proc. SPIE7836, 783607 (2010).
[CrossRef]

Fejer, M. M.

D. S. Hum and M. M. Fejer, “Quasi-phase matching,” C. R. Phys.8(2), 180–198 (2007).
[CrossRef]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
[CrossRef]

Fong, K. Y.

Gavrilenko, V.

V. Gavrilenko and R. Wu, “Second harmonic generation of GaN (0001),” Phys. Rev. B65(3), 035405 (2001).
[CrossRef]

Geiss, R.

R. Geiss, A. Chowdhury, C. M. Staus, H. M. Ng, S. S. Park, and J. Y. Han, “Low loss GaN at 1550 nm,” Appl. Phys. Lett.87(13), 132107 (2005).
[CrossRef]

Gerard, B.

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
[CrossRef]

Gérard, B.

C. Kieleck, A. Hildenbrand, M. Eichhorn, D. Faye, E. Lallier, B. Gérard, and S. D. Jackson, “OP-GaAs OPO pumped by 2μm Q-switched lasers: Tm;Ho:Silica fiber laser and Ho:YAG laser,” Proc. SPIE7836, 783607 (2010).
[CrossRef]

Grober, R. D.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001).
[CrossRef]

Grzegory, I.

F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, and J. Likonen, “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN,” Appl. Phys. Lett.86(3), 031915 (2005).
[CrossRef]

A. Jeżowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, and T. Paszkiewicz, “Thermal conductivity of GaN crystals in 4.2–300 K range,” Solid State Commun.128(2-3), 69–73 (2003).
[CrossRef]

Hageman, P. R.

F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, and J. Likonen, “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN,” Appl. Phys. Lett.86(3), 031915 (2005).
[CrossRef]

Han, J. Y.

R. Geiss, A. Chowdhury, C. M. Staus, H. M. Ng, S. S. Park, and J. Y. Han, “Low loss GaN at 1550 nm,” Appl. Phys. Lett.87(13), 132107 (2005).
[CrossRef]

Harris, J. S.

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
[CrossRef]

Hildenbrand, A.

C. Kieleck, A. Hildenbrand, M. Eichhorn, D. Faye, E. Lallier, B. Gérard, and S. D. Jackson, “OP-GaAs OPO pumped by 2μm Q-switched lasers: Tm;Ho:Silica fiber laser and Ho:YAG laser,” Proc. SPIE7836, 783607 (2010).
[CrossRef]

Hiramatsu, K.

K. Hiramatsu, T. Detchprohm, and I. Akasaki, “Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy,” Jpn. J. Appl. Phys.32(Part 1, No. 4), 1528–1533 (1993).
[CrossRef]

Hite, J. K.

J. K. Hite, M. E. Twigg, M. A. Mastro, C. R. Eddy, and F. J. Kub, “Initiating polarity inversion in GaN growth using an AlN interlayer,” Phys. Status Solidi A208(7), 1504–1506 (2011).
[CrossRef]

J. K. Hite, N. D. Bassim, M. E. Twigg, M. A. Mastro, F. J. Kub, and C. R. Eddy., “GaN vertical and lateral polarity heterostructures on GaN substrates,” J. Cryst. Growth332(1), 43–47 (2011).
[CrossRef]

Hum, D. S.

D. S. Hum and M. M. Fejer, “Quasi-phase matching,” C. R. Phys.8(2), 180–198 (2007).
[CrossRef]

Jackson, S. D.

C. Kieleck, A. Hildenbrand, M. Eichhorn, D. Faye, E. Lallier, B. Gérard, and S. D. Jackson, “OP-GaAs OPO pumped by 2μm Q-switched lasers: Tm;Ho:Silica fiber laser and Ho:YAG laser,” Proc. SPIE7836, 783607 (2010).
[CrossRef]

Jezowski, A.

A. Jeżowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, and T. Paszkiewicz, “Thermal conductivity of GaN crystals in 4.2–300 K range,” Solid State Commun.128(2-3), 69–73 (2003).
[CrossRef]

Karrer, U.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001).
[CrossRef]

Katayama, R.

R. Katayama, Y. Kuge, K. Onabe, T. Matsushita, and T. Kondo, “Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate,” Appl. Phys. Lett.89(23), 231910 (2006).
[CrossRef]

Kieleck, C.

C. Kieleck, A. Hildenbrand, M. Eichhorn, D. Faye, E. Lallier, B. Gérard, and S. D. Jackson, “OP-GaAs OPO pumped by 2μm Q-switched lasers: Tm;Ho:Silica fiber laser and Ho:YAG laser,” Proc. SPIE7836, 783607 (2010).
[CrossRef]

Kistenmacher, T. J.

Kitaoka, Y.

Kondo, T.

M. Abe, H. Sato, I. Shoji, J. Suda, M. Yoshimura, Y. Kitaoka, Y. Mori, and T. Kondo, “Accurate measurement of quadratic nonlinear-optical coefficients of gallium nitride,” J. Opt. Soc. Am. B27(10), 2026–2034 (2010).
[CrossRef]

R. Katayama, Y. Kuge, K. Onabe, T. Matsushita, and T. Kondo, “Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate,” Appl. Phys. Lett.89(23), 231910 (2006).
[CrossRef]

Krukowski, S.

A. Jeżowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, and T. Paszkiewicz, “Thermal conductivity of GaN crystals in 4.2–300 K range,” Solid State Commun.128(2-3), 69–73 (2003).
[CrossRef]

Kub, F. J.

J. K. Hite, M. E. Twigg, M. A. Mastro, C. R. Eddy, and F. J. Kub, “Initiating polarity inversion in GaN growth using an AlN interlayer,” Phys. Status Solidi A208(7), 1504–1506 (2011).
[CrossRef]

J. K. Hite, N. D. Bassim, M. E. Twigg, M. A. Mastro, F. J. Kub, and C. R. Eddy., “GaN vertical and lateral polarity heterostructures on GaN substrates,” J. Cryst. Growth332(1), 43–47 (2011).
[CrossRef]

Kucharski, R.

M. Welna, R. Kudrawiec, M. Motyka, R. Kucharski, M. Zając, M. Rudziński, J. Misiewicz, R. Doradziński, and R. Dwiliński, “Transparency of GaN substrates in the mid-infrared spectral range,” Cryst. Res. Technol.47(3), 347–350 (2012).
[CrossRef]

Kudrawiec, R.

M. Welna, R. Kudrawiec, M. Motyka, R. Kucharski, M. Zając, M. Rudziński, J. Misiewicz, R. Doradziński, and R. Dwiliński, “Transparency of GaN substrates in the mid-infrared spectral range,” Cryst. Res. Technol.47(3), 347–350 (2012).
[CrossRef]

Kuge, Y.

R. Katayama, Y. Kuge, K. Onabe, T. Matsushita, and T. Kondo, “Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate,” Appl. Phys. Lett.89(23), 231910 (2006).
[CrossRef]

Kuo, P. S.

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
[CrossRef]

Lallier, E.

C. Kieleck, A. Hildenbrand, M. Eichhorn, D. Faye, E. Lallier, B. Gérard, and S. D. Jackson, “OP-GaAs OPO pumped by 2μm Q-switched lasers: Tm;Ho:Silica fiber laser and Ho:YAG laser,” Proc. SPIE7836, 783607 (2010).
[CrossRef]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
[CrossRef]

Lascaray, J. P.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Le Vassor d’Yerville, M.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Legros, R.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Levi, O.

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
[CrossRef]

Likonen, J.

F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, and J. Likonen, “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN,” Appl. Phys. Lett.86(3), 031915 (2005).
[CrossRef]

Lima Pimenta, A.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001).
[CrossRef]

Long, J. P.

J. P. Long, B. S. Simpkins, D. J. Rowenhorst, and P. E. Pehrsson, “Far-field imaging of optical second-harmonic generation in single GaN nanowires,” Nano Lett.7(3), 831–836 (2007).
[CrossRef] [PubMed]

Lucznik, B.

F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, and J. Likonen, “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN,” Appl. Phys. Lett.86(3), 031915 (2005).
[CrossRef]

Mastro, M. A.

J. K. Hite, M. E. Twigg, M. A. Mastro, C. R. Eddy, and F. J. Kub, “Initiating polarity inversion in GaN growth using an AlN interlayer,” Phys. Status Solidi A208(7), 1504–1506 (2011).
[CrossRef]

J. K. Hite, N. D. Bassim, M. E. Twigg, M. A. Mastro, F. J. Kub, and C. R. Eddy., “GaN vertical and lateral polarity heterostructures on GaN substrates,” J. Cryst. Growth332(1), 43–47 (2011).
[CrossRef]

Mathis, S. K.

S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, “Modeling of threading dislocation reduction in growing GaN layers,” Phys. Status Solidi A179(1), 125–145 (2000).
[CrossRef]

Matsushita, T.

R. Katayama, Y. Kuge, K. Onabe, T. Matsushita, and T. Kondo, “Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate,” Appl. Phys. Lett.89(23), 231910 (2006).
[CrossRef]

Miragliotta, J.

Misiewicz, J.

M. Welna, R. Kudrawiec, M. Motyka, R. Kucharski, M. Zając, M. Rudziński, J. Misiewicz, R. Doradziński, and R. Dwiliński, “Transparency of GaN substrates in the mid-infrared spectral range,” Cryst. Res. Technol.47(3), 347–350 (2012).
[CrossRef]

Mita, S.

S. Mita, R. Collazo, and Z. Sitar, “Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition,” J. Cryst. Growth311(10), 3044–3048 (2009).
[CrossRef]

Mori, Y.

Motyka, M.

M. Welna, R. Kudrawiec, M. Motyka, R. Kucharski, M. Zając, M. Rudziński, J. Misiewicz, R. Doradziński, and R. Dwiliński, “Transparency of GaN substrates in the mid-infrared spectral range,” Cryst. Res. Technol.47(3), 347–350 (2012).
[CrossRef]

Neuberger, R.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001).
[CrossRef]

Ng, H. M.

R. Geiss, A. Chowdhury, C. M. Staus, H. M. Ng, S. S. Park, and J. Y. Han, “Low loss GaN at 1550 nm,” Appl. Phys. Lett.87(13), 132107 (2005).
[CrossRef]

A. Chowdhury, H. M. Ng, M. Bhardwaj, and N. G. Weimann, “Second-harmonic generation in periodically poled GaN,” Appl. Phys. Lett.83(6), 1077–1079 (2003).
[CrossRef]

Onabe, K.

R. Katayama, Y. Kuge, K. Onabe, T. Matsushita, and T. Kondo, “Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate,” Appl. Phys. Lett.89(23), 231910 (2006).
[CrossRef]

Palacios, T.

Park, S. S.

R. Geiss, A. Chowdhury, C. M. Staus, H. M. Ng, S. S. Park, and J. Y. Han, “Low loss GaN at 1550 nm,” Appl. Phys. Lett.87(13), 132107 (2005).
[CrossRef]

Paszkiewicz, T.

A. Jeżowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, and T. Paszkiewicz, “Thermal conductivity of GaN crystals in 4.2–300 K range,” Solid State Commun.128(2-3), 69–73 (2003).
[CrossRef]

Pehrsson, P. E.

J. P. Long, B. S. Simpkins, D. J. Rowenhorst, and P. E. Pehrsson, “Far-field imaging of optical second-harmonic generation in single GaN nanowires,” Nano Lett.7(3), 831–836 (2007).
[CrossRef] [PubMed]

Pernice, W.

Petersen, E. B.

E. B. Petersen, W. Shi, A. Chavez-Pirson, N. Peyghambarian, and A. T. Cooney, “Efficient parametric terahertz generation in quasi-phase-matched GaP through cavity enhanced difference-frequency generation,” Appl. Phys. Lett.98(12), 121119 (2011).
[CrossRef]

Peyghambarian, N.

E. B. Petersen, W. Shi, A. Chavez-Pirson, N. Peyghambarian, and A. T. Cooney, “Efficient parametric terahertz generation in quasi-phase-matched GaP through cavity enhanced difference-frequency generation,” Appl. Phys. Lett.98(12), 121119 (2011).
[CrossRef]

Peyrade, D.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Pinguet, T. J.

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
[CrossRef]

Pompe, W.

S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, “Modeling of threading dislocation reduction in growing GaN layers,” Phys. Status Solidi A179(1), 125–145 (2000).
[CrossRef]

Porowski, S.

F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, and J. Likonen, “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN,” Appl. Phys. Lett.86(3), 031915 (2005).
[CrossRef]

Romanov, A. E.

S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, “Modeling of threading dislocation reduction in growing GaN layers,” Phys. Status Solidi A179(1), 125–145 (2000).
[CrossRef]

Rowenhorst, D. J.

J. P. Long, B. S. Simpkins, D. J. Rowenhorst, and P. E. Pehrsson, “Far-field imaging of optical second-harmonic generation in single GaN nanowires,” Nano Lett.7(3), 831–836 (2007).
[CrossRef] [PubMed]

Rudzinski, M.

M. Welna, R. Kudrawiec, M. Motyka, R. Kucharski, M. Zając, M. Rudziński, J. Misiewicz, R. Doradziński, and R. Dwiliński, “Transparency of GaN substrates in the mid-infrared spectral range,” Cryst. Res. Technol.47(3), 347–350 (2012).
[CrossRef]

Ruffenach, S.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Ryu, K. K.

Saarinen, K.

F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, and J. Likonen, “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN,” Appl. Phys. Lett.86(3), 031915 (2005).
[CrossRef]

Sato, H.

Schalwig, J.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001).
[CrossRef]

Schuck, C.

Schuck, P. J.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001).
[CrossRef]

Shi, W.

E. B. Petersen, W. Shi, A. Chavez-Pirson, N. Peyghambarian, and A. T. Cooney, “Efficient parametric terahertz generation in quasi-phase-matched GaP through cavity enhanced difference-frequency generation,” Appl. Phys. Lett.98(12), 121119 (2011).
[CrossRef]

Shoji, I.

Simpkins, B. S.

J. P. Long, B. S. Simpkins, D. J. Rowenhorst, and P. E. Pehrsson, “Far-field imaging of optical second-harmonic generation in single GaN nanowires,” Nano Lett.7(3), 831–836 (2007).
[CrossRef] [PubMed]

Sitar, Z.

S. Mita, R. Collazo, and Z. Sitar, “Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition,” J. Cryst. Growth311(10), 3044–3048 (2009).
[CrossRef]

Skauli, T.

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
[CrossRef]

Speck, J. S.

S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, “Modeling of threading dislocation reduction in growing GaN layers,” Phys. Status Solidi A179(1), 125–145 (2000).
[CrossRef]

Staus, C. M.

R. Geiss, A. Chowdhury, C. M. Staus, H. M. Ng, S. S. Park, and J. Y. Han, “Low loss GaN at 1550 nm,” Appl. Phys. Lett.87(13), 132107 (2005).
[CrossRef]

Stroscio, M. A.

J. Yang, G. J. Brown, M. Dutta, and M. A. Stroscio, “Photon absorption in the Restrahlen band of thin films of GaN and AlN: two phonon effects,” J. Appl. Phys.98(4), 043517 (2005).
[CrossRef]

Stutzmann, M.

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, “Playing with polarity,” Phys. Status Solidi B228(2), 505–512 (2001).
[CrossRef]

Suda, J.

Suski, T.

F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, and J. Likonen, “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN,” Appl. Phys. Lett.86(3), 031915 (2005).
[CrossRef]

A. Jeżowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, and T. Paszkiewicz, “Thermal conductivity of GaN crystals in 4.2–300 K range,” Solid State Commun.128(2-3), 69–73 (2003).
[CrossRef]

Tang, H. X.

Teisseyre, H.

F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, and J. Likonen, “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN,” Appl. Phys. Lett.86(3), 031915 (2005).
[CrossRef]

Torres, J.

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d’Yerville, E. Centeno, D. Cassagne, and J. P. Albert, “Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal,” Phys. Status Solidi B240(2), 455–458 (2003).
[CrossRef]

Tuomisto, F.

F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P. R. Hageman, and J. Likonen, “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN,” Appl. Phys. Lett.86(3), 031915 (2005).
[CrossRef]

Twigg, M. E.

J. K. Hite, M. E. Twigg, M. A. Mastro, C. R. Eddy, and F. J. Kub, “Initiating polarity inversion in GaN growth using an AlN interlayer,” Phys. Status Solidi A208(7), 1504–1506 (2011).
[CrossRef]

J. K. Hite, N. D. Bassim, M. E. Twigg, M. A. Mastro, F. J. Kub, and C. R. Eddy., “GaN vertical and lateral polarity heterostructures on GaN substrates,” J. Cryst. Growth332(1), 43–47 (2011).
[CrossRef]

Vodopyanov, K. L.

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys.94(10), 6447–6455 (2003).
[CrossRef]

Weimann, N. G.

A. Chowdhury, H. M. Ng, M. Bhardwaj, and N. G. Weimann, “Second-harmonic generation in periodically poled GaN,” Appl. Phys. Lett.83(6), 1077–1079 (2003).
[CrossRef]

Welna, M.

M. Welna, R. Kudrawiec, M. Motyka, R. Kucharski, M. Zając, M. Rudziński, J. Misiewicz, R. Doradziński, and R. Dwiliński, “Transparency of GaN substrates in the mid-infrared spectral range,” Cryst. Res. Technol.47(3), 347–350 (2012).
[CrossRef]

Wickenden, D. K.

Wu, R.

V. Gavrilenko and R. Wu, “Second harmonic generation of GaN (0001),” Phys. Rev. B65(3), 035405 (2001).
[CrossRef]

Xiong, C.

Yang, J.

J. Yang, G. J. Brown, M. Dutta, and M. A. Stroscio, “Photon absorption in the Restrahlen band of thin films of GaN and AlN: two phonon effects,” J. Appl. Phys.98(4), 043517 (2005).
[CrossRef]

Yoshimura, M.

Zajac, M.

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Figures (4)

Fig. 1
Fig. 1

Schematic of growth method used to produce alternating GaN polarity on GaN substrates.

Fig. 2
Fig. 2

SEM of the surface of a 2μm thick MOCVD-grown PO GaN sample. The different polarities are marked.

Fig. 3
Fig. 3

Cross-sectional TEM of the substrate/MOCVD PO GaN template/HVPE re-growth interface.

Fig. 4
Fig. 4

Cross-sectional SEM of a HVPE extension growth. Ga-polar and N-polar regions are easily distinguished by contrast. The surface exhibits faceting.

Tables (1)

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Table 1 Properties of NLO Materials

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