Abstract

Progress in processing low-loss quasi-phase-matched gallium arsenide crystals makes it possible to benefit from their excellent nonlinear properties in practical mid-infrared sources. This paper addresses both crystal growth aspects and the most recent device demonstrations.

© 2012 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. E. D. Palik, Handbook of Optical Constants of Solids (Academic Press, Orlando, 1985).
  2. L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett.29(22), 1942–1944 (1993).
    [CrossRef]
  3. P. S. Kuo, K. L. Vodopyanov, M. M. Fejer, X. Yu, J. S. Harris, D. F. Bliss, and D. Weyburne, “GaAs optical parametric oscillator with circularly polarized and depolarized pump,” Opt. Lett.32(18), 2735–2737 (2007).
    [CrossRef] [PubMed]
  4. C. Kieleck, M. Eichhorn, A. Hirth, D. Faye, and E. Lallier, “High-efficiency 20-50 kHz mid-infrared orientation-patterned GaAs optical parametric oscillator pumped by a 2 µm holmium laser,” Opt. Lett.34(3), 262–264 (2009).
    [CrossRef] [PubMed]
  5. S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys.37(Part 2, No. 12B), L1493–L1496 (1998).
    [CrossRef]
  6. C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth201-202, 187–193 (1999).
    [CrossRef]
  7. E. Lallier and A. Grisard, “Quasi-phase matched nonlinear crystals,” in Encyclopedia of Optical Engineering (Marcel Dekker, 2002).
  8. E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth222(3), 482–496 (2001).
    [CrossRef]
  9. A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C9(7), 1651–1654 (2012).
  10. L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett.79(7), 904–906 (2001).
    [CrossRef]
  11. K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett.29(16), 1912–1914 (2004).
    [CrossRef] [PubMed]
  12. S. Vasilyev, S. Schiller, A. Nevsky, A. Grisard, D. Faye, E. Lallier, Z. Zhang, A. J. Boyland, J. K. Sahu, M. Ibsen, and W. A. Clarkson, “Broadly tunable single-frequency cw mid-infrared source with milliwatt-level output based on difference-frequency generation in orientation-patterned GaAs,” Opt. Lett.33(13), 1413–1415 (2008).
    [CrossRef] [PubMed]
  13. L. A. Pomeranz, P. G. Schunemann, S. D. Setzler, C. Jones, and P. A. Budni, “Continuous-wave optical parametric oscillator based on orientation patterned gallium arsenide,” in CLEO: QELS-Fundamental Science, OSA Technical Digest (Optical Society of America, 2012), paper JTh1I.4.
  14. A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE7836, 783606 (2010).
    [CrossRef]
  15. A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE8187, 818715 (2011).
  16. G. Bloom, A. Grisard, E. Lallier, C. Larat, M. Carras, and X. Marcadet, “Optical parametric amplification of a distributed-feedback quantum-cascade laser in orientation-patterned GaAs,” Opt. Lett.35(4), 505–507 (2010).
    [CrossRef] [PubMed]

2012 (1)

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C9(7), 1651–1654 (2012).

2011 (1)

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE8187, 818715 (2011).

2010 (2)

A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE7836, 783606 (2010).
[CrossRef]

G. Bloom, A. Grisard, E. Lallier, C. Larat, M. Carras, and X. Marcadet, “Optical parametric amplification of a distributed-feedback quantum-cascade laser in orientation-patterned GaAs,” Opt. Lett.35(4), 505–507 (2010).
[CrossRef] [PubMed]

2009 (1)

2008 (1)

2007 (1)

2004 (1)

2001 (2)

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth222(3), 482–496 (2001).
[CrossRef]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett.79(7), 904–906 (2001).
[CrossRef]

1999 (1)

C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth201-202, 187–193 (1999).
[CrossRef]

1998 (1)

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys.37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

1993 (1)

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett.29(22), 1942–1944 (1993).
[CrossRef]

Becouarn, L.

K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett.29(16), 1912–1914 (2004).
[CrossRef] [PubMed]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett.79(7), 904–906 (2001).
[CrossRef]

Bliss, D. F.

Bloom, G.

Boyland, A. J.

Byer, R. L.

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett.29(22), 1942–1944 (1993).
[CrossRef]

Cadoret, R.

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth222(3), 482–496 (2001).
[CrossRef]

Carras, M.

Castelluci, D.

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth222(3), 482–496 (2001).
[CrossRef]

Clarkson, W. A.

Ebert, C. B.

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett.79(7), 904–906 (2001).
[CrossRef]

C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth201-202, 187–193 (1999).
[CrossRef]

Eckardt, R. C.

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett.29(22), 1942–1944 (1993).
[CrossRef]

Eichhorn, M.

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE8187, 818715 (2011).

C. Kieleck, M. Eichhorn, A. Hirth, D. Faye, and E. Lallier, “High-efficiency 20-50 kHz mid-infrared orientation-patterned GaAs optical parametric oscillator pumped by a 2 µm holmium laser,” Opt. Lett.34(3), 262–264 (2009).
[CrossRef] [PubMed]

Eyres, L. A.

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett.79(7), 904–906 (2001).
[CrossRef]

C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth201-202, 187–193 (1999).
[CrossRef]

Faye, D.

Feigelson, R. S.

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett.29(22), 1942–1944 (1993).
[CrossRef]

Fejer, M. M.

P. S. Kuo, K. L. Vodopyanov, M. M. Fejer, X. Yu, J. S. Harris, D. F. Bliss, and D. Weyburne, “GaAs optical parametric oscillator with circularly polarized and depolarized pump,” Opt. Lett.32(18), 2735–2737 (2007).
[CrossRef] [PubMed]

K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett.29(16), 1912–1914 (2004).
[CrossRef] [PubMed]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett.79(7), 904–906 (2001).
[CrossRef]

C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth201-202, 187–193 (1999).
[CrossRef]

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett.29(22), 1942–1944 (1993).
[CrossRef]

Gerard, B.

K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett.29(16), 1912–1914 (2004).
[CrossRef] [PubMed]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett.79(7), 904–906 (2001).
[CrossRef]

Gérard, B.

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C9(7), 1651–1654 (2012).

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE8187, 818715 (2011).

A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE7836, 783606 (2010).
[CrossRef]

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth222(3), 482–496 (2001).
[CrossRef]

Gil-Lafon, E.

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth222(3), 482–496 (2001).
[CrossRef]

Gordon, L. A.

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett.29(22), 1942–1944 (1993).
[CrossRef]

Grisard, A.

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C9(7), 1651–1654 (2012).

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE8187, 818715 (2011).

A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE7836, 783606 (2010).
[CrossRef]

G. Bloom, A. Grisard, E. Lallier, C. Larat, M. Carras, and X. Marcadet, “Optical parametric amplification of a distributed-feedback quantum-cascade laser in orientation-patterned GaAs,” Opt. Lett.35(4), 505–507 (2010).
[CrossRef] [PubMed]

S. Vasilyev, S. Schiller, A. Nevsky, A. Grisard, D. Faye, E. Lallier, Z. Zhang, A. J. Boyland, J. K. Sahu, M. Ibsen, and W. A. Clarkson, “Broadly tunable single-frequency cw mid-infrared source with milliwatt-level output based on difference-frequency generation in orientation-patterned GaAs,” Opt. Lett.33(13), 1413–1415 (2008).
[CrossRef] [PubMed]

Gutty, F.

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C9(7), 1651–1654 (2012).

A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE7836, 783606 (2010).
[CrossRef]

Harris, J. S.

P. S. Kuo, K. L. Vodopyanov, M. M. Fejer, X. Yu, J. S. Harris, D. F. Bliss, and D. Weyburne, “GaAs optical parametric oscillator with circularly polarized and depolarized pump,” Opt. Lett.32(18), 2735–2737 (2007).
[CrossRef] [PubMed]

K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett.29(16), 1912–1914 (2004).
[CrossRef] [PubMed]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett.79(7), 904–906 (2001).
[CrossRef]

C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth201-202, 187–193 (1999).
[CrossRef]

Hildenbrand, A.

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE8187, 818715 (2011).

Hirth, A.

Ibsen, M.

Ichinose, H.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys.37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Ishiwada, T.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys.37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Ito, R.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys.37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Iwamoto, C.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys.37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Jimenez, J.

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C9(7), 1651–1654 (2012).

Kieleck, C.

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE8187, 818715 (2011).

C. Kieleck, M. Eichhorn, A. Hirth, D. Faye, and E. Lallier, “High-efficiency 20-50 kHz mid-infrared orientation-patterned GaAs optical parametric oscillator pumped by a 2 µm holmium laser,” Opt. Lett.34(3), 262–264 (2009).
[CrossRef] [PubMed]

Koh, S.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys.37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Kondo, T.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys.37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Kuo, P. S.

Lallier, E.

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C9(7), 1651–1654 (2012).

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE8187, 818715 (2011).

A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE7836, 783606 (2010).
[CrossRef]

G. Bloom, A. Grisard, E. Lallier, C. Larat, M. Carras, and X. Marcadet, “Optical parametric amplification of a distributed-feedback quantum-cascade laser in orientation-patterned GaAs,” Opt. Lett.35(4), 505–507 (2010).
[CrossRef] [PubMed]

C. Kieleck, M. Eichhorn, A. Hirth, D. Faye, and E. Lallier, “High-efficiency 20-50 kHz mid-infrared orientation-patterned GaAs optical parametric oscillator pumped by a 2 µm holmium laser,” Opt. Lett.34(3), 262–264 (2009).
[CrossRef] [PubMed]

S. Vasilyev, S. Schiller, A. Nevsky, A. Grisard, D. Faye, E. Lallier, Z. Zhang, A. J. Boyland, J. K. Sahu, M. Ibsen, and W. A. Clarkson, “Broadly tunable single-frequency cw mid-infrared source with milliwatt-level output based on difference-frequency generation in orientation-patterned GaAs,” Opt. Lett.33(13), 1413–1415 (2008).
[CrossRef] [PubMed]

K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett.29(16), 1912–1914 (2004).
[CrossRef] [PubMed]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett.79(7), 904–906 (2001).
[CrossRef]

Larat, C.

Levi, O.

Marcadet, X.

Napierala, J.

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth222(3), 482–496 (2001).
[CrossRef]

Nevsky, A.

Pimpinelli, A.

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth222(3), 482–496 (2001).
[CrossRef]

Pinguet, T. J.

K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Optical parametric oscillation in quasi-phase-matched GaAs,” Opt. Lett.29(16), 1912–1914 (2004).
[CrossRef] [PubMed]

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett.79(7), 904–906 (2001).
[CrossRef]

Route, R. R.

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett.29(22), 1942–1944 (1993).
[CrossRef]

Sahu, J. K.

Schiller, S.

Shiraki, Y.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys.37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Tourreau, P. J.

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett.79(7), 904–906 (2001).
[CrossRef]

Usami, T.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys.37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Vasilyev, S.

Vodopyanov, K. L.

Weyburne, D.

Woods, G. L.

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett.29(22), 1942–1944 (1993).
[CrossRef]

Yaguchi, H.

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys.37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Yu, X.

Zhang, Z.

Appl. Phys. Lett. (1)

L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, and E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett.79(7), 904–906 (2001).
[CrossRef]

Electron. Lett. (1)

L. A. Gordon, G. L. Woods, R. C. Eckardt, R. R. Route, R. S. Feigelson, M. M. Fejer, and R. L. Byer, “Diffusion-bonded stacked GaAs for quasi-phase-matched second-harmonic generation of a carbon dioxide laser,” Electron. Lett.29(22), 1942–1944 (1993).
[CrossRef]

J. Cryst. Growth (2)

C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy,” J. Cryst. Growth201-202, 187–193 (1999).
[CrossRef]

E. Gil-Lafon, J. Napierala, D. Castelluci, A. Pimpinelli, R. Cadoret, and B. Gérard, “Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies,” J. Cryst. Growth222(3), 482–496 (2001).
[CrossRef]

Jpn. J. Appl. Phys. (1)

S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito, “Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy,” Jpn. J. Appl. Phys.37(Part 2, No. 12B), L1493–L1496 (1998).
[CrossRef]

Opt. Lett. (5)

Phys. Status Solidi C (1)

A. Grisard, F. Gutty, E. Lallier, B. Gérard, and J. Jimenez, “Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation,” Phys. Status Solidi C9(7), 1651–1654 (2012).

Proc. SPIE (2)

A. Grisard, F. Gutty, E. Lallier, and B. Gérard, “Compact fiber laser-pumped mid-infrared source based on orientation-patterned gallium arsenide,” Proc. SPIE7836, 783606 (2010).
[CrossRef]

A. Hildenbrand, C. Kieleck, E. Lallier, D. Faye, A. Grisard, B. Gérard, and M. Eichhorn, “Compact efficient mid-infrared laser source: OP-GaAs OPO pumped by Ho3+:YAG laser,” Proc. SPIE8187, 818715 (2011).

Other (3)

E. Lallier and A. Grisard, “Quasi-phase matched nonlinear crystals,” in Encyclopedia of Optical Engineering (Marcel Dekker, 2002).

L. A. Pomeranz, P. G. Schunemann, S. D. Setzler, C. Jones, and P. A. Budni, “Continuous-wave optical parametric oscillator based on orientation patterned gallium arsenide,” in CLEO: QELS-Fundamental Science, OSA Technical Digest (Optical Society of America, 2012), paper JTh1I.4.

E. D. Palik, Handbook of Optical Constants of Solids (Academic Press, Orlando, 1985).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (7)

Fig. 1
Fig. 1

OP-GaAs tuning curves.

Fig. 2
Fig. 2

Template fabrication (light eventually propagates along [-110]).

Fig. 3
Fig. 3

Left: a 2 inches wafer after the HVPE growth. Right: side views of periodic orientation patterning after revelation by chemical etching (see text).

Fig. 4
Fig. 4

Panchromatic CL image showing growth interruptions (compared to previous figures, the template is on top).

Fig. 5
Fig. 5

Measured Π°| and calculated (solid curve) difference frequency generation output versus signal wavelength.

Fig. 6
Fig. 6

Left: compact fiber-laser pump OPO module. Right: power scaling of the mid-IR output from the OP-GaAs optical parametric oscillator.

Fig. 7
Fig. 7

Gain versus pump average power. Squares (Circles), experiment with a 41-mm-long (32-mm-long) crystal. Solid curves, theoretical fits with SNLO calculation; dotted curves, with non-depleted pump approximation.

Tables (1)

Tables Icon

Table 1 Comparison of Material Properties

Metrics