We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 × 1020cm−3, and uniform activated dopant concentrations above 4 × 1019cm−3 in a 600-800nm thick Ge layer after in-diffusion. By controlling dopant out-diffusion, near-complete incorporation of phosphorus diffusion source is shown.
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R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorus doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112(3), 034509 (2012).
[Crossref]
G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons, “Dual-temperature encapsulation of phosphorus in germanium delta layers toward ultra-shallow junctions,” J. Cryst. Growth 316(1), 81–84 (2011).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref]
[PubMed]
R. Soref, “Silicon photonics: a review of recent literature,” Silicon 2(1), 1–6 (2010).
[Crossref]
J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, “Ultradense phosphorus in germanium delta-doped layers,” Appl. Phys. Lett. 94(16), 162106 (2009).
[Crossref]
S. Brotzmann and H. Bracht, “Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium,” J. Appl. Phys. 103(3), 033508 (2008).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Optical bleaching of thin film Ge on Si,” ECS Trans. 16, 881–889 (2008).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
S.-M. Jang, K. Liao, and R. Reif, “Chemical vapor deposition of epitaxial silicon-germanium from silane and germane. II. In situ boron, arsenic, and phosphorus doping,” J. Electrochem. Soc. 142(10), 3520–3527 (1995).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
R. Olesinski, N. Kanani, and G. Abbaschian, “The Ge−P (germanium-phosphorus) system,” J. Phase Equilibria 6, 262–266 (1985).
C. E. C. Wood, G. Metze, J. Berry, and L. F. Eastman, “Complex free-carrier profile synthesis by ‘atomic-plane’ doping of MBE GaAs,” J. Appl. Phys. 51(1), 383–387 (1980).
[Crossref]
S. J. Bass, “Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method,” J. Cryst. Growth 47(5-6), 613–618 (1979).
[Crossref]
R. Olesinski, N. Kanani, and G. Abbaschian, “The Ge−P (germanium-phosphorus) system,” J. Phase Equilibria 6, 262–266 (1985).
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
S. J. Bass, “Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method,” J. Cryst. Growth 47(5-6), 613–618 (1979).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
C. E. C. Wood, G. Metze, J. Berry, and L. F. Eastman, “Complex free-carrier profile synthesis by ‘atomic-plane’ doping of MBE GaAs,” J. Appl. Phys. 51(1), 383–387 (1980).
[Crossref]
Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorus doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112(3), 034509 (2012).
[Crossref]
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
S. Brotzmann and H. Bracht, “Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium,” J. Appl. Phys. 103(3), 033508 (2008).
[Crossref]
S. Brotzmann and H. Bracht, “Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium,” J. Appl. Phys. 103(3), 033508 (2008).
[Crossref]
Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorus doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112(3), 034509 (2012).
[Crossref]
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorus doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112(3), 034509 (2012).
[Crossref]
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref]
[PubMed]
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons, “Dual-temperature encapsulation of phosphorus in germanium delta layers toward ultra-shallow junctions,” J. Cryst. Growth 316(1), 81–84 (2011).
[Crossref]
G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, “Ultradense phosphorus in germanium delta-doped layers,” Appl. Phys. Lett. 94(16), 162106 (2009).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref]
[PubMed]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
C. E. C. Wood, G. Metze, J. Berry, and L. F. Eastman, “Complex free-carrier profile synthesis by ‘atomic-plane’ doping of MBE GaAs,” J. Appl. Phys. 51(1), 383–387 (1980).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
S.-M. Jang, K. Liao, and R. Reif, “Chemical vapor deposition of epitaxial silicon-germanium from silane and germane. II. In situ boron, arsenic, and phosphorus doping,” J. Electrochem. Soc. 142(10), 3520–3527 (1995).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
R. Olesinski, N. Kanani, and G. Abbaschian, “The Ge−P (germanium-phosphorus) system,” J. Phase Equilibria 6, 262–266 (1985).
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorus doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112(3), 034509 (2012).
[Crossref]
J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Optical bleaching of thin film Ge on Si,” ECS Trans. 16, 881–889 (2008).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons, “Dual-temperature encapsulation of phosphorus in germanium delta layers toward ultra-shallow junctions,” J. Cryst. Growth 316(1), 81–84 (2011).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, “Ultradense phosphorus in germanium delta-doped layers,” Appl. Phys. Lett. 94(16), 162106 (2009).
[Crossref]
S.-M. Jang, K. Liao, and R. Reif, “Chemical vapor deposition of epitaxial silicon-germanium from silane and germane. II. In situ boron, arsenic, and phosphorus doping,” J. Electrochem. Soc. 142(10), 3520–3527 (1995).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Optical bleaching of thin film Ge on Si,” ECS Trans. 16, 881–889 (2008).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref]
[PubMed]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
C. E. C. Wood, G. Metze, J. Berry, and L. F. Eastman, “Complex free-carrier profile synthesis by ‘atomic-plane’ doping of MBE GaAs,” J. Appl. Phys. 51(1), 383–387 (1980).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorus doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112(3), 034509 (2012).
[Crossref]
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref]
[PubMed]
J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Optical bleaching of thin film Ge on Si,” ECS Trans. 16, 881–889 (2008).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref]
[PubMed]
R. Olesinski, N. Kanani, and G. Abbaschian, “The Ge−P (germanium-phosphorus) system,” J. Phase Equilibria 6, 262–266 (1985).
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
S.-M. Jang, K. Liao, and R. Reif, “Chemical vapor deposition of epitaxial silicon-germanium from silane and germane. II. In situ boron, arsenic, and phosphorus doping,” J. Electrochem. Soc. 142(10), 3520–3527 (1995).
[Crossref]
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref]
[PubMed]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons, “Dual-temperature encapsulation of phosphorus in germanium delta layers toward ultra-shallow junctions,” J. Cryst. Growth 316(1), 81–84 (2011).
[Crossref]
G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, “Ultradense phosphorus in germanium delta-doped layers,” Appl. Phys. Lett. 94(16), 162106 (2009).
[Crossref]
S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref]
[PubMed]
G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons, “Dual-temperature encapsulation of phosphorus in germanium delta layers toward ultra-shallow junctions,” J. Cryst. Growth 316(1), 81–84 (2011).
[Crossref]
G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, “Ultradense phosphorus in germanium delta-doped layers,” Appl. Phys. Lett. 94(16), 162106 (2009).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
R. Soref, “Silicon photonics: a review of recent literature,” Silicon 2(1), 1–6 (2010).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Optical bleaching of thin film Ge on Si,” ECS Trans. 16, 881–889 (2008).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref]
[PubMed]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
C. E. C. Wood, G. Metze, J. Berry, and L. F. Eastman, “Complex free-carrier profile synthesis by ‘atomic-plane’ doping of MBE GaAs,” J. Appl. Phys. 51(1), 383–387 (1980).
[Crossref]
S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref]
[PubMed]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, “Ultradense phosphorus in germanium delta-doped layers,” Appl. Phys. Lett. 94(16), 162106 (2009).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Optical bleaching of thin film Ge on Si,” ECS Trans. 16, 881–889 (2008).
[Crossref]
Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorus doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112(3), 034509 (2012).
[Crossref]
C. E. C. Wood, G. Metze, J. Berry, and L. F. Eastman, “Complex free-carrier profile synthesis by ‘atomic-plane’ doping of MBE GaAs,” J. Appl. Phys. 51(1), 383–387 (1980).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
S. Brotzmann and H. Bracht, “Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium,” J. Appl. Phys. 103(3), 033508 (2008).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
S. J. Bass, “Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method,” J. Cryst. Growth 47(5-6), 613–618 (1979).
[Crossref]
G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons, “Dual-temperature encapsulation of phosphorus in germanium delta layers toward ultra-shallow junctions,” J. Cryst. Growth 316(1), 81–84 (2011).
[Crossref]
S.-M. Jang, K. Liao, and R. Reif, “Chemical vapor deposition of epitaxial silicon-germanium from silane and germane. II. In situ boron, arsenic, and phosphorus doping,” J. Electrochem. Soc. 142(10), 3520–3527 (1995).
[Crossref]
R. Olesinski, N. Kanani, and G. Abbaschian, “The Ge−P (germanium-phosphorus) system,” J. Phase Equilibria 6, 262–266 (1985).
J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]
S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref]
[PubMed]
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref]
[PubMed]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
R. Soref, “Silicon photonics: a review of recent literature,” Silicon 2(1), 1–6 (2010).
[Crossref]
E. Kasper, M. Oehme, T. Aguirov, J. Werner, M. Kittler, and J. Schulze, “Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes,” in Proceedings of Group IV Photonics 2010 (2010).
P. Velha, K. Gallacher, D. C. Dumas, M. Myronov, D. R. Leadley, and D. J. Paul, “Direct band-gap electroluminescence from strained n-doped germanium diode,” in CLEO: Science and Innovations, OSA Technical Digest (online) (Optical Society of America, 2012), paper CW1L.7.
X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Band-engineered Ge as gain medium for Si-based laser,” in Integrated Photonics and Nanophotonics Research and Applications (IPNRA) Topical Meeting, (Boston, MA, USA, 2008).
X. Sun, “Ge-on-Si light-emitting materials and devices for silicon photonics,” Ph.D. dissertation (MIT, 2009).
R. Camacho-Aguilera, Z. Han, Y. Cai, J. Bessette, L. Kimerling, and J. Michel, “Band gap narrowing in highly doped Ge,” submitted (2012).
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Schematic of the growth layers. The dopant reservoir are alternating layers of Ge and P. Dopant concentration in Ge increases dramatically in the dopant reservoir without being linear due to slow diffusion into the intrinsic undoped Ge used in the layers.
SEM images of (a) in situ doped Ge and (b) delta doped Ge grown with source grown at 400C. Notice difference in surface roughness which indicates the arrest of epitaxial growth.
SIMS profiles of as-grown P delta doped Ge, with P deltas grown at (a) 400°C and (b) 450°C. Dopant diffusion from delta source increases the concentration of P in the underlying high temperature Ge region.
SIMS profiles of dopant redistribution from delta doped Ge grown at 400°C. The diffusion of the dopant is time and temperature dependent, becoming more uniform at higher temperatures but limited by outdiffusion at longer times.
Comparison of P solid solubility [26] in Ge and observed maximum active carrier concentration of delta doping at different temperatures.
Table 1 Photoluminescence at RT of Delta Doped Ge Samples under Different RTA Conditions
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