R. Olesinski, N. Kanani, and G. Abbaschian, “The Ge−P (germanium-phosphorus) system,” J. Phase Equilibria 6, 262–266 (1985).
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
S. J. Bass, “Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method,” J. Cryst. Growth 47(5-6), 613–618 (1979).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
C. E. C. Wood, G. Metze, J. Berry, and L. F. Eastman, “Complex free-carrier profile synthesis by ‘atomic-plane’ doping of MBE GaAs,” J. Appl. Phys. 51(1), 383–387 (1980).
[Crossref]
Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorus doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112(3), 034509 (2012).
[Crossref]
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
S. Brotzmann and H. Bracht, “Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium,” J. Appl. Phys. 103(3), 033508 (2008).
[Crossref]
S. Brotzmann and H. Bracht, “Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium,” J. Appl. Phys. 103(3), 033508 (2008).
[Crossref]
Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorus doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112(3), 034509 (2012).
[Crossref]
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorus doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112(3), 034509 (2012).
[Crossref]
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref]
[PubMed]
G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons, “Dual-temperature encapsulation of phosphorus in germanium delta layers toward ultra-shallow junctions,” J. Cryst. Growth 316(1), 81–84 (2011).
[Crossref]
G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, “Ultradense phosphorus in germanium delta-doped layers,” Appl. Phys. Lett. 94(16), 162106 (2009).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
C. E. C. Wood, G. Metze, J. Berry, and L. F. Eastman, “Complex free-carrier profile synthesis by ‘atomic-plane’ doping of MBE GaAs,” J. Appl. Phys. 51(1), 383–387 (1980).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
S.-M. Jang, K. Liao, and R. Reif, “Chemical vapor deposition of epitaxial silicon-germanium from silane and germane. II. In situ boron, arsenic, and phosphorus doping,” J. Electrochem. Soc. 142(10), 3520–3527 (1995).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
R. Olesinski, N. Kanani, and G. Abbaschian, “The Ge−P (germanium-phosphorus) system,” J. Phase Equilibria 6, 262–266 (1985).
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorus doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112(3), 034509 (2012).
[Crossref]
J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Optical bleaching of thin film Ge on Si,” ECS Trans. 16, 881–889 (2008).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons, “Dual-temperature encapsulation of phosphorus in germanium delta layers toward ultra-shallow junctions,” J. Cryst. Growth 316(1), 81–84 (2011).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, “Ultradense phosphorus in germanium delta-doped layers,” Appl. Phys. Lett. 94(16), 162106 (2009).
[Crossref]
S.-M. Jang, K. Liao, and R. Reif, “Chemical vapor deposition of epitaxial silicon-germanium from silane and germane. II. In situ boron, arsenic, and phosphorus doping,” J. Electrochem. Soc. 142(10), 3520–3527 (1995).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Optical bleaching of thin film Ge on Si,” ECS Trans. 16, 881–889 (2008).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
C. E. C. Wood, G. Metze, J. Berry, and L. F. Eastman, “Complex free-carrier profile synthesis by ‘atomic-plane’ doping of MBE GaAs,” J. Appl. Phys. 51(1), 383–387 (1980).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorus doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112(3), 034509 (2012).
[Crossref]
R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref]
[PubMed]
J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref]
[PubMed]
J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Optical bleaching of thin film Ge on Si,” ECS Trans. 16, 881–889 (2008).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
R. Olesinski, N. Kanani, and G. Abbaschian, “The Ge−P (germanium-phosphorus) system,” J. Phase Equilibria 6, 262–266 (1985).
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, “Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy,” J. Appl. Phys. 74(5), 3150–3155 (1993).
[Crossref]
L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502 (2006).
[Crossref]
S.-M. Jang, K. Liao, and R. Reif, “Chemical vapor deposition of epitaxial silicon-germanium from silane and germane. II. In situ boron, arsenic, and phosphorus doping,” J. Electrochem. Soc. 142(10), 3520–3527 (1995).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge,” Appl. Phys. Lett. 88(16), 162118 (2006).
[Crossref]
M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108(2), 023105 (2010).
[Crossref]
G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons, “Dual-temperature encapsulation of phosphorus in germanium delta layers toward ultra-shallow junctions,” J. Cryst. Growth 316(1), 81–84 (2011).
[Crossref]
G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, “Ultradense phosphorus in germanium delta-doped layers,” Appl. Phys. Lett. 94(16), 162106 (2009).
[Crossref]
G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons, “Dual-temperature encapsulation of phosphorus in germanium delta layers toward ultra-shallow junctions,” J. Cryst. Growth 316(1), 81–84 (2011).
[Crossref]
G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, “Ultradense phosphorus in germanium delta-doped layers,” Appl. Phys. Lett. 94(16), 162106 (2009).
[Crossref]
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