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Abstract
In this Letter, we demonstrate an electrically contacted saturable absorber (SA) device based on topological Dirac semimetal . With a current-induced temperature change in the range of 297–336 K, the modulation depth of the device is found to be significantly altered from 33% to 76% (under the irradiation of a 1560 nm femtosecond laser). The broad tuning of the modulation depth is attributed to the strong temperature dependence of the carrier concentration close to room temperature. The simple tuning mechanism uncovered here, together with the compatibility with III-V compounds substrate, such as GaAs, points to the potential of fabricating broadband, electrically tunable, SESAM-like devices based on emerging bulk Dirac materials.
© 2019 Optical Society of America
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