Abstract

We report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar ($11\overline{2}2$) InGaN/GaN light-emitting diodes (LEDs) operating at 430–450 nm grown on high-quality ($11\overline{2}2$) GaN templates, which were prepared on patterned ($10\overline{1}2$) $r$-plane sapphire substrates. The measured frequency response at $-3\mathrm{dB}$ of the LEDs was up to 1 GHz. A high back-to-back data transmission rate of above 2.4 Gbps is demonstrated using a non-return-to-zero on-off keying modulation scheme. This indicates that ($11\overline{2}2$) LEDs are suitable gigabit per second data transmission for use in visible-light communication applications.

© 2016 Optical Society of America

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