Abstract

Two different speed optimized avalanche photodiodes (APDs) fabricated in a 0.35 μm standard high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) process with a high unamplified responsivity (avalanche gain $M=1$) of 0.41 A/W at 670 nm are presented. These APDs differ regarding the effective doping of the deep $p$ well (90% and 75%), using lateral well modulation doping. Compared to the $-3\mathrm{dB}$ bandwidth of the unmodulated APD with 100% doping (850 MHz), this optimization leads to an improved bandwidth of 1.02 and 1.25 GHz for the 75% APD and 90% APD, respectively, both at a gain of $M=50$.

© 2015 Optical Society of America

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