Abstract

We demonstrate monolithic integration of a wavelength division multiplexed light source for silicon photonics by a cascade of erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers. Four DFB lasers with uniformly spaced emission wavelengths are cascaded in a series to simultaneously operate with no additional tuning required. A total output power of 10.9dBm is obtained from the four DFBs with an average side mode suppression ratio of 38.1±2.5dB. We characterize the temperature-dependent wavelength shift of the cascaded DFBs and observe a uniform dλ/dT of 0.02 nm/°C across all four lasers.

© 2017 Optical Society of America

A wavelength division multiplexed (WDM) light source is a key component in silicon photonics technology for application in optical communications [13]. It generally consists of several uniformly spaced optical wavelengths that can be used to encode multiple communication channels in a common output. Several research groups have demonstrated integrated WDM light sources of up to 16 channels by bonding of III-V gain material onto the silicon chip [48]. However, these hybrid devices often require careful temperature control and complex fabrication steps with yield challenges. Alternatively, rare-earth-doped glass lasers on silicon, such as erbium-doped aluminum oxide (Al2O3:Er3+) or thulium-doped aluminum oxide (Al2O3:Tm3+) lasers, have been shown to achieve high power, low noise, good thermal stability, and low lasing threshold [913]. Monolithic integration of Al2O3:Er3+ lasers has been demonstrated in a CMOS-compatible process with only a single backend Al2O3:Er3+ deposition step [1416]. The wide gain bandwidth of the erbium enables the laser wavelength tunability and design flexibility [1722]. By combining several lasers with varying grating periods, a multi-wavelength light source can be obtained with custom longitudinal mode spacing.

In this Letter, we demonstrate a monolithic WDM source by cascading four Al2O3:Er3+ distributed (DFB) lasers. We achieve simultaneous operation of four DFBs at a total power of 10.9dBm and an average side mode suppression ratio (SMSR) of 38.1±2.5dB in each DFB. The measured temperature-dependent wavelength shift is uniform across all four lasers with dλ/dT=0.02nm/°C.

The design of the cascaded DFB structure is shown in Fig. 1. Four DFB lasers are cascaded in a series with the length of each laser LDFB=5.5mm, the distance between each laser Lspacing=0.1mm, and the first grating period Λ1=490nm with 2 nm subsequent increment (Λ2=492nm, Λ3=494nm, and Λ4=496nm). Each DFB laser has a quarter phase shift located at the center, thus emitting symmetric outputs on both sides. The right output from DFB1 propagates to the next laser DFB2, and so on to the right end of the structure. The combined output is then a WDM of four uniformly spaced wavelengths. In order to design an asymmetric output that emits on only one end of the device, the phase shift can be placed to be slightly off-center in the cavity. With small reabsorption loss (0.5 dB/cm at 1563 nm [23]) and good thermal stability of the Al2O3:Er3+ laser, the lasers can be placed closely with negligible crosstalk.

 figure: Fig. 1.

Fig. 1. Design of a WDM light source by cascaded DFBs. Four Al2O3:Er3+ DFB lasers at a uniformly spaced grating period are cascaded in a series to generate a multi-wavelengths laser output.

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In order to allow integration into a more general silicon photonics wafer-scale process where thicker, higher-confinement silicon nitride (SiNx) structures might be preferred [24], we extend our erbium laser design [10] to work for a thicker SiNx by using a multi-segmented waveguide structure [25,26]. To form a compact CMOS-compatible cascaded DFB structure, we optimized the multi-segmented waveguide design for short lasers. Figure 2 shows the laser waveguide which consists of nitride (SiNx) segments with the grating perturbation formed by periodic etching of the first and last segments. The SiNx segments have dimensions of thickness t=200nm, width w=450nm, and gap g=400nm. A silicon dioxide (SiO2) gap gox=200nm is then added on top of the SiNx structure. All fabrication steps until SiO2 cladding are completed in a 300 mm line CMOS foundry, as reported earlier [10], only with a difference in layer thickness. Lastly, the Al2O3:Er3+ gain medium of thickness tAlO=1100nm is deposited by a reactive co-sputtering process [23,27] as the final backend step. The Er3+ ion concentration is NEr=1.0×1020cm3, and the background loss is measured to be <0.1dB/cm, using the prism coupling method.

 figure: Fig. 2.

Fig. 2. CMOS-compatible multi-segmented waveguide design of Al2O3:Er3+ DFB lasers. The structure consists of five SiNx segments used for a thicker SiNx design, with the grating constructed by periodic perturbation of the outer segments.

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The multi-segmented waveguide is designed to have a single transverse-electric mode at the pump (980 nm) and laser (1550 nm) wavelengths. The design also allows for efficient optical pumping of the Al2O3:Er3+ lasers with high mode confinement and good intensity overlap of the pump and laser mode. The confinement factor of the pump and laser in the gain layer is calculated using a finite difference mode solver to be 89% and 90%, respectively, with an intensity overlap >95%, as shown in Fig. 3.

 figure: Fig. 3.

Fig. 3. Mode solver calculation of the intensity distribution for the pump (980 nm) and laser (1550 nm) wavelengths in the multi-segmented waveguide design.

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We measure the transmission response of the cascaded DFB structure by using a tunable laser, as shown in Fig. 4. Sharp resonances are located at the center of each DFB response at wavelengths λ1=1563.56nm, λ2=1569.84nm, λ3=1575.90nm, and λ4=1581.76nm. The sharp peaks have a lower transmission amplitude (10–15 dB) in the passive measurement of Al2O3:Er3+, mainly due to the absorption of an unpumped active ion. The wavelength spacings between adjacent DFBs are slightly nonuniform (Δλadjacent=6.28, 6.06, and 5.86 nm). We believe that this can be explained by the thickness nonuniformity of the Al2O3:Er3+ film deposition. In a standard sputtering system, the target is mounted on a rotating platform with a radially varying thickness profile from the center. Thus, a conventional straight DFB structure would experience thickness nonuniformity along the cavity. We present a more detailed explanation and a possible solution in a follow-up work [28].

 figure: Fig. 4.

Fig. 4. Transmission measurement of a cascaded DFB structure. The sharp peaks have a lower transmission amplitude (10–15 dB) in the passive measurement of Al2O3:Er3+, mainly due to the absorption of an unpumped active ion.

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Laser measurements were carried out by pumping the cascaded DFB structure from both sides with two fiber pigtailed laser diodes centered at 978 (left side) and 976 nm (right side). Accounting for fiber chip coupling losses, the maximum on-chip pump powers of the 978 and 976 nm diodes are estimated to be 120 mW (left pump) and 70 mW (right pump), respectively. The output is monitored using two optical spectrum analyzers (OSAs) on both sides. We obtain laser wavelengths centered at 1563.92, 1570.20, 1576.28, and 1582.16 nm, slightly higher than the passive transmission measurement due to local heating by pump absorption. The peak output powers obtained in the left (and right) OSA for the four DFBs are as follows: 17.7 (17.4dBm), 20.4 (20.2dBm), 22.1 (22.6dBm), and 19.1dBm (24.0dBm). The measured power from the left and right OSA generally show similar output levels, except for DFB4, which might be caused by a fabrication defect. We plot the total emission spectrum of the cascaded DFBs by adding the spectrum obtained from both left and right OSAs in Fig. 5. The total peak power obtained for different wavelengths are 14.5, 17.5, 19.4, and 18.0dBm. This corresponds to a total cascaded DFB output power of 10.9dBm from all four DFBs, an average of 16.9dBm per DFB. By assuming the noise floor at 55.0dBm, as shown in the figure, we obtain an average of 38.1±2.5dB SMSR per DFB which, to the best of our knowledge, is one of the best signal-to-noise performances of an on-chip WDM light source ever reported [6].

 figure: Fig. 5.

Fig. 5. Total emission spectrum of the cascaded DFB WDM source at a maximum pump power.

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We perform a temperature dependence test of the cascaded DFBs by placing the chip on a thermoelectric cooler (TEC). The TEC temperature can be adjusted from 20°C to 40°C by varying the current level. Figure 6 shows the spectrum of DFB1 at temperatures of 20°C, 30°C, and 40°C. No significant change of the output power is observed at varying temperatures, demonstrating thermal stability of the Al2O3:Er3+ lasers. Figure 7 shows the wavelengths of all four DFBs at varying temperatures with a uniform temperature-dependent shift of dλ/dT=0.02nm/°C across all four lasers. This is less than half, compared with the thermal wavelength shift of the hybrid lasers for WDM [5,6,29,30].

 figure: Fig. 6.

Fig. 6. OSA spectra of DFB1 laser at varying temperatures, from 20°C to 40°C, showing dλ/dT of 0.02 nm/°C.

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 figure: Fig. 7.

Fig. 7. Temperature-dependent wavelength shift of lasers in a cascaded DFB structure shows gradual changes in 20°C–40°C (0.02 nm/°C) and uniformity across all channels.

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Improved performance of the cascaded DFB laser WDM light source can be achieved in the following ways. The maximal output of each DFB laser can be optimized by varying the grating strength κ and cavity length LDFB, as shown in [15]. The pump laser can be recirculated by using a selective reflector to obtain a more flattened spatial pump profile. In addition, by taking into account the doping concentration, reabsorption loss, and total available pump power, the combined WDM output can be carefully designed to have better power uniformity. Lastly, to scale the cascaded DFB to include more DFB lasers, several structures can be combined in parallel, or the structure can be folded around the chip to increase the total available length. (Here the design was constrained by the chip length of 2.5 cm.)

In summary, we have demonstrated CMOS-compatible monolithic integration of a WDM light source in a silicon photonics platform by a cascade of Al2O3:Er3+ DFB lasers. Simultaneous operation of four DFB lasers has been achieved with a total power of 10.9dBm, corresponding to an average power of 16.9dBm and a 38.1±2.5dB SMSR for each DFB laser. The output shows good thermal stability with varying chip temperatures (20°C–40°C), with a uniform temperature-dependent wavelength shift of dλ/dT=0.02nm/°C across all four DFBs. We propose that such Al2O3:Er3+ lasers are an alternative approach to low noise and thermally stable WDM light sources for optical communications.

Funding

Defense Advanced Research Projects Agency (DARPA) (HR0011-12-2-0007).

Acknowledgment

The authors would like to acknowledge Dr. Joshua Conway for the helpful discussions. N. Li is sponsored by National Science Scholarship (NSS) from the Agency of Science, Technology and Research (A*STAR), Singapore.

REFERENCES

1. M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. B. Tang, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 19, 6100117 (2013). [CrossRef]  

2. L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010). [CrossRef]  

3. M. J. R. Heck, H. W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 333 (2011). [CrossRef]  

4. A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

5. S. S. Sui, M. Y. Tang, Y. D. Yang, J. L. Xiao, Y. Du, and Y. Z. Huang, IEEE J. Quantum Electron. 51, 1 (2015). [CrossRef]  

6. S. Tanaka, S. H. Jeong, S. Sekiguchi, T. Akiyama, T. Kurahashi, Y. Tanaka, and K. Morito, in Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (IEEE, 2013).

7. L. Tao, L. Yuan, Y. Li, H. Yu, B. Wang, Q. Kan, W. Chen, J. Pan, G. Ran, and W. Wang, Opt. Express 22, 5448 (2014). [CrossRef]  

8. G. Kurczveil, M. J. R. Heck, J. D. Peters, J. M. Garcia, D. Spencer, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 1521 (2011). [CrossRef]  

9. N. Li, Purnawirman, Z. Su, E. Salih Magden, P. T. Callahan, K. Shtyrkova, M. Xin, A. Ruocco, C. Baiocco, E. P. Ippen, F. X. Kärtner, J. D. B. Bradley, D. Vermeulen, and M. R. Watts , Opt. Lett. 42, 1181 (2017). [CrossRef]  

10. E. S. Hosseini, Purnawirman, J. D. B. Bradley, J. Sun, G. Leake, T. N. Adam, D. D. Coolbaugh, and M. R. Watts, Opt. Lett. 39, 3106 (2014). [CrossRef]  

11. E. H. Bernhardi, H. van Wolferen, L. Agazzi, M. R. H. Khan, C. G. H. Roeloffzen, K. Worhoff, M. Pollnau, and R. M. de Ridder, Opt. Lett. 35, 2394 (2010). [CrossRef]  

12. M. Belt and D. J. Blumenthal, in Optical Fiber Communications Conference and Exhibition (2015), pp. 1–3.

13. Z. Su, N. Li, E. Salih Magden, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, J. D. B. Bradley, and M. R. Watts, Opt. Lett. 41, 5708 (2016). [CrossRef]  

14. G. Singh, Purnawirman, J. D. B. Bradley, N. Li, E. S. Magden, M. Moresco, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Opt. Lett. 41, 1189 (2016). [CrossRef]  

15. M. Belt and D. J. Blumenthal, Opt. Express 22, 10655 (2014). [CrossRef]  

16. E. S. Magden, Purnawirman, N. Li, G. Singh, J. D. B. Bradley, G. S. Petrich, G. Leake, D. D. Coolbaugh, M. R. Watts, and L. A. Kolodziejski, “Fully CMOS-compatible integrated distributed feedback laser with 250°C fabricated Al2O3:Er3+ gain medium,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2016, paper SM1G.2.

17. Y. Liu, K. Wu, N. Li, L. Lan, S. Yoo, X. Wu, P. P. Shum, S. Zeng, and X. Tan, J. Opt. Soc. Korea 17, 357 (2013). [CrossRef]  

18. N. J. C. Libatique, L. Wang, and R. K. Jain, Opt. Express 10, 1503 (2002). [CrossRef]  

19. N. Li, E. Timurdogan, C. V. Poulton, M. Byrd, E. S. Magden, Z. Su, Purnawirman, G. Leake, D. D. Coolbaugh, D. Vermeulen, and M. R. Watts, Opt. Express 24, 22741 (2016). [CrossRef]  

20. Y. W. Song, S. A. Havstad, D. Starodubov, Y. Xie, A. E. Willner, and J. Feinberg, IEEE Photon. Technol. Lett. 13, 1167 (2001). [CrossRef]  

21. J. H. Wong, H. Q. Lam, S. Aditya, J. Zhou, N. Li, J. Xue, P. H. Lim, K. E. K. Lee, K. Wu, and P. P. Shum, J. Lightwave Technol. 30, 3164 (2012). [CrossRef]  

22. F. Xiao, K. Alameh, and T. Lee, Opt. Express 17, 18676 (2009). [CrossRef]  

23. K. Worhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. P. Blauwendraat, and M. Pollnau, IEEE J. Quantum Electron. 45, 454 (2009). [CrossRef]  

24. A. Gondarenko, J. S. Levy, and M. Lipson, Opt. Express 17, 11366 (2009). [CrossRef]  

25. Purnawirman, E. S. Hosseini, J. Sun, T. N. Adam, G. Leake, D. D. Coolbaugh, M. R. Watts, and A. Baldycheva, in Optical Fiber Communication Conference, San Francisco, California, 2014, paper W4E.5.

26. C. M. Sorace-Agaskar, P. T. Callahan, K. Shtyrkova, A. Baldycheva, M. Moresco, J. Bradley, M. Y. Peng, N. Li, E. S. Magden, P. Purnawirman, M. Y. Sander, G. Leake, D. Coolbaugh, M. R. Watts, and F. Kartner, “Integrated mode-locked lasers in a CMOS-compatible silicon photonic platform,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2015, paper SM2I.5.

27. J. D. Bradley, Z. Su, E. S. Magden, N. Li, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Proc. SPIE 9744, 97440U (2016). [CrossRef]  

28. Purnawirman, “Integrated erbium lasers in silicon photonics,” Ph.D. dissertation (Massachusetts Institute of Technology, 2017).

29. S. Tanaka, S.-H. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, Opt. Express 20, 28057 (2012). [CrossRef]  

30. J. Seok-Hwan, T. Shinsuke, S. Shigeaki, K. Teruo, H. Nobuaki, A. Suguru, U. Tatsuya, Y. Tsuyoshi, A. Tomoyuki, T. Yu, and M. Ken, Jpn. J. Appl. Phys. 51, 082101 (2012). [CrossRef]  

References

  • View by:

  1. M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. B. Tang, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 19, 6100117 (2013).
    [Crossref]
  2. L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
    [Crossref]
  3. M. J. R. Heck, H. W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 333 (2011).
    [Crossref]
  4. A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).
  5. S. S. Sui, M. Y. Tang, Y. D. Yang, J. L. Xiao, Y. Du, and Y. Z. Huang, IEEE J. Quantum Electron. 51, 1 (2015).
    [Crossref]
  6. S. Tanaka, S. H. Jeong, S. Sekiguchi, T. Akiyama, T. Kurahashi, Y. Tanaka, and K. Morito, in Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (IEEE, 2013).
  7. L. Tao, L. Yuan, Y. Li, H. Yu, B. Wang, Q. Kan, W. Chen, J. Pan, G. Ran, and W. Wang, Opt. Express 22, 5448 (2014).
    [Crossref]
  8. G. Kurczveil, M. J. R. Heck, J. D. Peters, J. M. Garcia, D. Spencer, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 1521 (2011).
    [Crossref]
  9. N. Li, Purnawirman, Z. Su, E. Salih Magden, P. T. Callahan, K. Shtyrkova, M. Xin, A. Ruocco, C. Baiocco, E. P. Ippen, F. X. Kärtner, J. D. B. Bradley, D. Vermeulen, and M. R. Watts , Opt. Lett. 42, 1181 (2017).
    [Crossref]
  10. E. S. Hosseini, Purnawirman, J. D. B. Bradley, J. Sun, G. Leake, T. N. Adam, D. D. Coolbaugh, and M. R. Watts, Opt. Lett. 39, 3106 (2014).
    [Crossref]
  11. E. H. Bernhardi, H. van Wolferen, L. Agazzi, M. R. H. Khan, C. G. H. Roeloffzen, K. Worhoff, M. Pollnau, and R. M. de Ridder, Opt. Lett. 35, 2394 (2010).
    [Crossref]
  12. M. Belt and D. J. Blumenthal, in Optical Fiber Communications Conference and Exhibition (2015), pp. 1–3.
  13. Z. Su, N. Li, E. Salih Magden, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, J. D. B. Bradley, and M. R. Watts, Opt. Lett. 41, 5708 (2016).
    [Crossref]
  14. G. Singh, Purnawirman, J. D. B. Bradley, N. Li, E. S. Magden, M. Moresco, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Opt. Lett. 41, 1189 (2016).
    [Crossref]
  15. M. Belt and D. J. Blumenthal, Opt. Express 22, 10655 (2014).
    [Crossref]
  16. E. S. Magden, Purnawirman, N. Li, G. Singh, J. D. B. Bradley, G. S. Petrich, G. Leake, D. D. Coolbaugh, M. R. Watts, and L. A. Kolodziejski, “Fully CMOS-compatible integrated distributed feedback laser with 250°C fabricated Al2O3:Er3+ gain medium,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2016, paper SM1G.2.
  17. Y. Liu, K. Wu, N. Li, L. Lan, S. Yoo, X. Wu, P. P. Shum, S. Zeng, and X. Tan, J. Opt. Soc. Korea 17, 357 (2013).
    [Crossref]
  18. N. J. C. Libatique, L. Wang, and R. K. Jain, Opt. Express 10, 1503 (2002).
    [Crossref]
  19. N. Li, E. Timurdogan, C. V. Poulton, M. Byrd, E. S. Magden, Z. Su, Purnawirman, G. Leake, D. D. Coolbaugh, D. Vermeulen, and M. R. Watts, Opt. Express 24, 22741 (2016).
    [Crossref]
  20. Y. W. Song, S. A. Havstad, D. Starodubov, Y. Xie, A. E. Willner, and J. Feinberg, IEEE Photon. Technol. Lett. 13, 1167 (2001).
    [Crossref]
  21. J. H. Wong, H. Q. Lam, S. Aditya, J. Zhou, N. Li, J. Xue, P. H. Lim, K. E. K. Lee, K. Wu, and P. P. Shum, J. Lightwave Technol. 30, 3164 (2012).
    [Crossref]
  22. F. Xiao, K. Alameh, and T. Lee, Opt. Express 17, 18676 (2009).
    [Crossref]
  23. K. Worhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. P. Blauwendraat, and M. Pollnau, IEEE J. Quantum Electron. 45, 454 (2009).
    [Crossref]
  24. A. Gondarenko, J. S. Levy, and M. Lipson, Opt. Express 17, 11366 (2009).
    [Crossref]
  25. Purnawirman, E. S. Hosseini, J. Sun, T. N. Adam, G. Leake, D. D. Coolbaugh, M. R. Watts, and A. Baldycheva, in Optical Fiber Communication Conference, San Francisco, California, 2014, paper W4E.5.
  26. C. M. Sorace-Agaskar, P. T. Callahan, K. Shtyrkova, A. Baldycheva, M. Moresco, J. Bradley, M. Y. Peng, N. Li, E. S. Magden, P. Purnawirman, M. Y. Sander, G. Leake, D. Coolbaugh, M. R. Watts, and F. Kartner, “Integrated mode-locked lasers in a CMOS-compatible silicon photonic platform,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2015, paper SM2I.5.
  27. J. D. Bradley, Z. Su, E. S. Magden, N. Li, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Proc. SPIE 9744, 97440U (2016).
    [Crossref]
  28. Purnawirman, “Integrated erbium lasers in silicon photonics,” Ph.D. dissertation (Massachusetts Institute of Technology, 2017).
  29. S. Tanaka, S.-H. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, Opt. Express 20, 28057 (2012).
    [Crossref]
  30. J. Seok-Hwan, T. Shinsuke, S. Shigeaki, K. Teruo, H. Nobuaki, A. Suguru, U. Tatsuya, Y. Tsuyoshi, A. Tomoyuki, T. Yu, and M. Ken, Jpn. J. Appl. Phys. 51, 082101 (2012).
    [Crossref]

2017 (1)

2016 (4)

2015 (1)

S. S. Sui, M. Y. Tang, Y. D. Yang, J. L. Xiao, Y. Du, and Y. Z. Huang, IEEE J. Quantum Electron. 51, 1 (2015).
[Crossref]

2014 (3)

2013 (2)

Y. Liu, K. Wu, N. Li, L. Lan, S. Yoo, X. Wu, P. P. Shum, S. Zeng, and X. Tan, J. Opt. Soc. Korea 17, 357 (2013).
[Crossref]

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. B. Tang, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 19, 6100117 (2013).
[Crossref]

2012 (3)

2011 (2)

M. J. R. Heck, H. W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 333 (2011).
[Crossref]

G. Kurczveil, M. J. R. Heck, J. D. Peters, J. M. Garcia, D. Spencer, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 1521 (2011).
[Crossref]

2010 (2)

L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
[Crossref]

E. H. Bernhardi, H. van Wolferen, L. Agazzi, M. R. H. Khan, C. G. H. Roeloffzen, K. Worhoff, M. Pollnau, and R. M. de Ridder, Opt. Lett. 35, 2394 (2010).
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2009 (3)

F. Xiao, K. Alameh, and T. Lee, Opt. Express 17, 18676 (2009).
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K. Worhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. P. Blauwendraat, and M. Pollnau, IEEE J. Quantum Electron. 45, 454 (2009).
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A. Gondarenko, J. S. Levy, and M. Lipson, Opt. Express 17, 11366 (2009).
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2002 (1)

2001 (1)

Y. W. Song, S. A. Havstad, D. Starodubov, Y. Xie, A. E. Willner, and J. Feinberg, IEEE Photon. Technol. Lett. 13, 1167 (2001).
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Adam, T. N.

Z. Su, N. Li, E. Salih Magden, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, J. D. B. Bradley, and M. R. Watts, Opt. Lett. 41, 5708 (2016).
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G. Singh, Purnawirman, J. D. B. Bradley, N. Li, E. S. Magden, M. Moresco, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Opt. Lett. 41, 1189 (2016).
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J. D. Bradley, Z. Su, E. S. Magden, N. Li, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Proc. SPIE 9744, 97440U (2016).
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E. S. Hosseini, Purnawirman, J. D. B. Bradley, J. Sun, G. Leake, T. N. Adam, D. D. Coolbaugh, and M. R. Watts, Opt. Lett. 39, 3106 (2014).
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Purnawirman, E. S. Hosseini, J. Sun, T. N. Adam, G. Leake, D. D. Coolbaugh, M. R. Watts, and A. Baldycheva, in Optical Fiber Communication Conference, San Francisco, California, 2014, paper W4E.5.

Aditya, S.

Agazzi, L.

Akiyama, T.

S. Tanaka, S. H. Jeong, S. Sekiguchi, T. Akiyama, T. Kurahashi, Y. Tanaka, and K. Morito, in Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (IEEE, 2013).

Alameh, K.

Alduino, A.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Au, H.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Ay, F.

K. Worhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. P. Blauwendraat, and M. Pollnau, IEEE J. Quantum Electron. 45, 454 (2009).
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Baiocco, C.

Baldycheva, A.

Purnawirman, E. S. Hosseini, J. Sun, T. N. Adam, G. Leake, D. D. Coolbaugh, M. R. Watts, and A. Baldycheva, in Optical Fiber Communication Conference, San Francisco, California, 2014, paper W4E.5.

C. M. Sorace-Agaskar, P. T. Callahan, K. Shtyrkova, A. Baldycheva, M. Moresco, J. Bradley, M. Y. Peng, N. Li, E. S. Magden, P. Purnawirman, M. Y. Sander, G. Leake, D. Coolbaugh, M. R. Watts, and F. Kartner, “Integrated mode-locked lasers in a CMOS-compatible silicon photonic platform,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2015, paper SM2I.5.

Bar, R.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Basak, J.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Bauters, J. F.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. B. Tang, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 19, 6100117 (2013).
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Beatty, R.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Belt, M.

M. Belt and D. J. Blumenthal, Opt. Express 22, 10655 (2014).
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M. Belt and D. J. Blumenthal, in Optical Fiber Communications Conference and Exhibition (2015), pp. 1–3.

Bernhardi, E. H.

Blauwendraat, T. P.

K. Worhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. P. Blauwendraat, and M. Pollnau, IEEE J. Quantum Electron. 45, 454 (2009).
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Blumenthal, D. J.

M. Belt and D. J. Blumenthal, Opt. Express 22, 10655 (2014).
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M. Belt and D. J. Blumenthal, in Optical Fiber Communications Conference and Exhibition (2015), pp. 1–3.

Bovington, J.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Bowers, J. E.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. B. Tang, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 19, 6100117 (2013).
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M. J. R. Heck, H. W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 333 (2011).
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G. Kurczveil, M. J. R. Heck, J. D. Peters, J. M. Garcia, D. Spencer, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 1521 (2011).
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Bradley, J.

C. M. Sorace-Agaskar, P. T. Callahan, K. Shtyrkova, A. Baldycheva, M. Moresco, J. Bradley, M. Y. Peng, N. Li, E. S. Magden, P. Purnawirman, M. Y. Sander, G. Leake, D. Coolbaugh, M. R. Watts, and F. Kartner, “Integrated mode-locked lasers in a CMOS-compatible silicon photonic platform,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2015, paper SM2I.5.

Bradley, J. D.

J. D. Bradley, Z. Su, E. S. Magden, N. Li, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Proc. SPIE 9744, 97440U (2016).
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Bradley, J. D. B.

N. Li, Purnawirman, Z. Su, E. Salih Magden, P. T. Callahan, K. Shtyrkova, M. Xin, A. Ruocco, C. Baiocco, E. P. Ippen, F. X. Kärtner, J. D. B. Bradley, D. Vermeulen, and M. R. Watts , Opt. Lett. 42, 1181 (2017).
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G. Singh, Purnawirman, J. D. B. Bradley, N. Li, E. S. Magden, M. Moresco, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Opt. Lett. 41, 1189 (2016).
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Z. Su, N. Li, E. Salih Magden, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, J. D. B. Bradley, and M. R. Watts, Opt. Lett. 41, 5708 (2016).
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E. S. Hosseini, Purnawirman, J. D. B. Bradley, J. Sun, G. Leake, T. N. Adam, D. D. Coolbaugh, and M. R. Watts, Opt. Lett. 39, 3106 (2014).
[Crossref]

K. Worhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. P. Blauwendraat, and M. Pollnau, IEEE J. Quantum Electron. 45, 454 (2009).
[Crossref]

E. S. Magden, Purnawirman, N. Li, G. Singh, J. D. B. Bradley, G. S. Petrich, G. Leake, D. D. Coolbaugh, M. R. Watts, and L. A. Kolodziejski, “Fully CMOS-compatible integrated distributed feedback laser with 250°C fabricated Al2O3:Er3+ gain medium,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2016, paper SM1G.2.

Byrd, M.

Callahan, P. T.

N. Li, Purnawirman, Z. Su, E. Salih Magden, P. T. Callahan, K. Shtyrkova, M. Xin, A. Ruocco, C. Baiocco, E. P. Ippen, F. X. Kärtner, J. D. B. Bradley, D. Vermeulen, and M. R. Watts , Opt. Lett. 42, 1181 (2017).
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C. M. Sorace-Agaskar, P. T. Callahan, K. Shtyrkova, A. Baldycheva, M. Moresco, J. Bradley, M. Y. Peng, N. Li, E. S. Magden, P. Purnawirman, M. Y. Sander, G. Leake, D. Coolbaugh, M. R. Watts, and F. Kartner, “Integrated mode-locked lasers in a CMOS-compatible silicon photonic platform,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2015, paper SM2I.5.

Chen, H. W.

M. J. R. Heck, H. W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 333 (2011).
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Chen, W.

Coolbaugh, D.

Z. Su, N. Li, E. Salih Magden, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, J. D. B. Bradley, and M. R. Watts, Opt. Lett. 41, 5708 (2016).
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G. Singh, Purnawirman, J. D. B. Bradley, N. Li, E. S. Magden, M. Moresco, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Opt. Lett. 41, 1189 (2016).
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J. D. Bradley, Z. Su, E. S. Magden, N. Li, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Proc. SPIE 9744, 97440U (2016).
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C. M. Sorace-Agaskar, P. T. Callahan, K. Shtyrkova, A. Baldycheva, M. Moresco, J. Bradley, M. Y. Peng, N. Li, E. S. Magden, P. Purnawirman, M. Y. Sander, G. Leake, D. Coolbaugh, M. R. Watts, and F. Kartner, “Integrated mode-locked lasers in a CMOS-compatible silicon photonic platform,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2015, paper SM2I.5.

Coolbaugh, D. D.

N. Li, E. Timurdogan, C. V. Poulton, M. Byrd, E. S. Magden, Z. Su, Purnawirman, G. Leake, D. D. Coolbaugh, D. Vermeulen, and M. R. Watts, Opt. Express 24, 22741 (2016).
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E. S. Hosseini, Purnawirman, J. D. B. Bradley, J. Sun, G. Leake, T. N. Adam, D. D. Coolbaugh, and M. R. Watts, Opt. Lett. 39, 3106 (2014).
[Crossref]

E. S. Magden, Purnawirman, N. Li, G. Singh, J. D. B. Bradley, G. S. Petrich, G. Leake, D. D. Coolbaugh, M. R. Watts, and L. A. Kolodziejski, “Fully CMOS-compatible integrated distributed feedback laser with 250°C fabricated Al2O3:Er3+ gain medium,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2016, paper SM1G.2.

Purnawirman, E. S. Hosseini, J. Sun, T. N. Adam, G. Leake, D. D. Coolbaugh, M. R. Watts, and A. Baldycheva, in Optical Fiber Communication Conference, San Francisco, California, 2014, paper W4E.5.

Davenport, M. L.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. B. Tang, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 19, 6100117 (2013).
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de Ridder, R. M.

Dorren, H. J. S.

L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
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Dosunmu, O.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Doylend, J. K.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. B. Tang, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 19, 6100117 (2013).
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Du, Y.

S. S. Sui, M. Y. Tang, Y. D. Yang, J. L. Xiao, Y. Du, and Y. Z. Huang, IEEE J. Quantum Electron. 51, 1 (2015).
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Fang, A. W.

M. J. R. Heck, H. W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 333 (2011).
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Feinberg, J.

Y. W. Song, S. A. Havstad, D. Starodubov, Y. Xie, A. E. Willner, and J. Feinberg, IEEE Photon. Technol. Lett. 13, 1167 (2001).
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Garcia, J. M.

G. Kurczveil, M. J. R. Heck, J. D. Peters, J. M. Garcia, D. Spencer, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 1521 (2011).
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Geskus, D.

K. Worhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. P. Blauwendraat, and M. Pollnau, IEEE J. Quantum Electron. 45, 454 (2009).
[Crossref]

Gomez-Agis, F.

L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
[Crossref]

Gondarenko, A.

Hakami, M.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Haubensack, F.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Havstad, S. A.

Y. W. Song, S. A. Havstad, D. Starodubov, Y. Xie, A. E. Willner, and J. Feinberg, IEEE Photon. Technol. Lett. 13, 1167 (2001).
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Heck, J.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Heck, M. J. R.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. B. Tang, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 19, 6100117 (2013).
[Crossref]

M. J. R. Heck, H. W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 333 (2011).
[Crossref]

G. Kurczveil, M. J. R. Heck, J. D. Peters, J. M. Garcia, D. Spencer, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 1521 (2011).
[Crossref]

Horwitz, L.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Hosseini, E. S.

E. S. Hosseini, Purnawirman, J. D. B. Bradley, J. Sun, G. Leake, T. N. Adam, D. D. Coolbaugh, and M. R. Watts, Opt. Lett. 39, 3106 (2014).
[Crossref]

Purnawirman, E. S. Hosseini, J. Sun, T. N. Adam, G. Leake, D. D. Coolbaugh, M. R. Watts, and A. Baldycheva, in Optical Fiber Communication Conference, San Francisco, California, 2014, paper W4E.5.

Hsieh, I.-W.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Huang, Y. Z.

S. S. Sui, M. Y. Tang, Y. D. Yang, J. L. Xiao, Y. Du, and Y. Z. Huang, IEEE J. Quantum Electron. 51, 1 (2015).
[Crossref]

Ippen, E. P.

Jain, R. K.

Jain, S.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. B. Tang, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 19, 6100117 (2013).
[Crossref]

Jeong, S. H.

S. Tanaka, S. H. Jeong, S. Sekiguchi, T. Akiyama, T. Kurahashi, Y. Tanaka, and K. Morito, in Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (IEEE, 2013).

Jeong, S.-H.

Jones, R.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Kan, Q.

Kartner, F.

C. M. Sorace-Agaskar, P. T. Callahan, K. Shtyrkova, A. Baldycheva, M. Moresco, J. Bradley, M. Y. Peng, N. Li, E. S. Magden, P. Purnawirman, M. Y. Sander, G. Leake, D. Coolbaugh, M. R. Watts, and F. Kartner, “Integrated mode-locked lasers in a CMOS-compatible silicon photonic platform,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2015, paper SM2I.5.

Kärtner, F. X.

Ken, M.

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G. Singh, Purnawirman, J. D. B. Bradley, N. Li, E. S. Magden, M. Moresco, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Opt. Lett. 41, 1189 (2016).
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J. D. Bradley, Z. Su, E. S. Magden, N. Li, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Proc. SPIE 9744, 97440U (2016).
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Purnawirman, E. S. Hosseini, J. Sun, T. N. Adam, G. Leake, D. D. Coolbaugh, M. R. Watts, and A. Baldycheva, in Optical Fiber Communication Conference, San Francisco, California, 2014, paper W4E.5.

Purnawirman, P.

C. M. Sorace-Agaskar, P. T. Callahan, K. Shtyrkova, A. Baldycheva, M. Moresco, J. Bradley, M. Y. Peng, N. Li, E. S. Magden, P. Purnawirman, M. Y. Sander, G. Leake, D. Coolbaugh, M. R. Watts, and F. Kartner, “Integrated mode-locked lasers in a CMOS-compatible silicon photonic platform,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2015, paper SM2I.5.

Ran, G.

Riccardi, E.

L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
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A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

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Saba, R.

A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

Salih Magden, E.

Sander, M. Y.

C. M. Sorace-Agaskar, P. T. Callahan, K. Shtyrkova, A. Baldycheva, M. Moresco, J. Bradley, M. Y. Peng, N. Li, E. S. Magden, P. Purnawirman, M. Y. Sander, G. Leake, D. Coolbaugh, M. R. Watts, and F. Kartner, “Integrated mode-locked lasers in a CMOS-compatible silicon photonic platform,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2015, paper SM2I.5.

Scheytt, J. C.

L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
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L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
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S. Tanaka, S.-H. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, Opt. Express 20, 28057 (2012).
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Seok-Hwan, J.

J. Seok-Hwan, T. Shinsuke, S. Shigeaki, K. Teruo, H. Nobuaki, A. Suguru, U. Tatsuya, Y. Tsuyoshi, A. Tomoyuki, T. Yu, and M. Ken, Jpn. J. Appl. Phys. 51, 082101 (2012).
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L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
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J. Seok-Hwan, T. Shinsuke, S. Shigeaki, K. Teruo, H. Nobuaki, A. Suguru, U. Tatsuya, Y. Tsuyoshi, A. Tomoyuki, T. Yu, and M. Ken, Jpn. J. Appl. Phys. 51, 082101 (2012).
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J. Seok-Hwan, T. Shinsuke, S. Shigeaki, K. Teruo, H. Nobuaki, A. Suguru, U. Tatsuya, Y. Tsuyoshi, A. Tomoyuki, T. Yu, and M. Ken, Jpn. J. Appl. Phys. 51, 082101 (2012).
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N. Li, Purnawirman, Z. Su, E. Salih Magden, P. T. Callahan, K. Shtyrkova, M. Xin, A. Ruocco, C. Baiocco, E. P. Ippen, F. X. Kärtner, J. D. B. Bradley, D. Vermeulen, and M. R. Watts , Opt. Lett. 42, 1181 (2017).
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Singh, G.

G. Singh, Purnawirman, J. D. B. Bradley, N. Li, E. S. Magden, M. Moresco, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Opt. Lett. 41, 1189 (2016).
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L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
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A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

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E. S. Hosseini, Purnawirman, J. D. B. Bradley, J. Sun, G. Leake, T. N. Adam, D. D. Coolbaugh, and M. R. Watts, Opt. Lett. 39, 3106 (2014).
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A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

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L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
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L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
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Z. Su, N. Li, E. Salih Magden, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, J. D. B. Bradley, and M. R. Watts, Opt. Lett. 41, 5708 (2016).
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J. D. Bradley, Z. Su, E. S. Magden, N. Li, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Proc. SPIE 9744, 97440U (2016).
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E. S. Hosseini, Purnawirman, J. D. B. Bradley, J. Sun, G. Leake, T. N. Adam, D. D. Coolbaugh, and M. R. Watts, Opt. Lett. 39, 3106 (2014).
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C. M. Sorace-Agaskar, P. T. Callahan, K. Shtyrkova, A. Baldycheva, M. Moresco, J. Bradley, M. Y. Peng, N. Li, E. S. Magden, P. Purnawirman, M. Y. Sander, G. Leake, D. Coolbaugh, M. R. Watts, and F. Kartner, “Integrated mode-locked lasers in a CMOS-compatible silicon photonic platform,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2015, paper SM2I.5.

E. S. Magden, Purnawirman, N. Li, G. Singh, J. D. B. Bradley, G. S. Petrich, G. Leake, D. D. Coolbaugh, M. R. Watts, and L. A. Kolodziejski, “Fully CMOS-compatible integrated distributed feedback laser with 250°C fabricated Al2O3:Er3+ gain medium,” in Conference on Lasers and Electro-Optics (CLEO), San Jose, California, Optical Society of America, 2016, paper SM1G.2.

Purnawirman, E. S. Hosseini, J. Sun, T. N. Adam, G. Leake, D. D. Coolbaugh, M. R. Watts, and A. Baldycheva, in Optical Fiber Communication Conference, San Francisco, California, 2014, paper W4E.5.

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Y. W. Song, S. A. Havstad, D. Starodubov, Y. Xie, A. E. Willner, and J. Feinberg, IEEE Photon. Technol. Lett. 13, 1167 (2001).
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A. Alduino, L. Liao, R. Jones, M. Morse, B. Kim, W.-Z. Lo, J. Basak, B. Koch, H.-F. Liu, H. Rong, M. Sysak, C. Krause, R. Saba, D. Lazar, L. Horwitz, R. Bar, S. Litski, A. Liu, K. Sullivan, O. Dosunmu, N. Na, T. Yin, F. Haubensack, I.-W. Hsieh, J. Heck, R. Beatty, H. Park, J. Bovington, S. Lee, H. Nguyen, H. Au, K. Nguyen, P. Merani, M. Hakami, and M. Paniccia, Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (2010).

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L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
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M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. B. Tang, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 19, 6100117 (2013).
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L. Stampoulidis, K. Vyrsokinos, K. Voigt, L. Zimmermann, F. Gomez-Agis, H. J. S. Dorren, Z. Sheng, D. Van Thourhout, L. Moerl, J. Kreissl, B. Sedighi, J. C. Scheytt, A. Pagano, and E. Riccardi, IEEE J. Sel. Top. Quantum Electron. 16, 1422 (2010).
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M. J. R. Heck, H. W. Chen, A. W. Fang, B. R. Koch, D. Liang, H. Park, M. N. Sysak, and J. E. Bowers, IEEE J. Sel. Top. Quantum Electron. 17, 333 (2011).
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IEEE Photon. Technol. Lett. (1)

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J. Lightwave Technol. (1)

J. Opt. Soc. Korea (1)

Jpn. J. Appl. Phys. (1)

J. Seok-Hwan, T. Shinsuke, S. Shigeaki, K. Teruo, H. Nobuaki, A. Suguru, U. Tatsuya, Y. Tsuyoshi, A. Tomoyuki, T. Yu, and M. Ken, Jpn. J. Appl. Phys. 51, 082101 (2012).
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Opt. Express (7)

Opt. Lett. (5)

Proc. SPIE (1)

J. D. Bradley, Z. Su, E. S. Magden, N. Li, M. Byrd, Purnawirman, T. N. Adam, G. Leake, D. Coolbaugh, and M. R. Watts, Proc. SPIE 9744, 97440U (2016).
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Other (7)

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Figures (7)

Fig. 1.
Fig. 1. Design of a WDM light source by cascaded DFBs. Four Al 2 O 3 : Er 3 + DFB lasers at a uniformly spaced grating period are cascaded in a series to generate a multi-wavelengths laser output.
Fig. 2.
Fig. 2. CMOS-compatible multi-segmented waveguide design of Al 2 O 3 : Er 3 + DFB lasers. The structure consists of five SiN x segments used for a thicker SiN x design, with the grating constructed by periodic perturbation of the outer segments.
Fig. 3.
Fig. 3. Mode solver calculation of the intensity distribution for the pump (980 nm) and laser (1550 nm) wavelengths in the multi-segmented waveguide design.
Fig. 4.
Fig. 4. Transmission measurement of a cascaded DFB structure. The sharp peaks have a lower transmission amplitude (10–15 dB) in the passive measurement of Al 2 O 3 : Er 3 + , mainly due to the absorption of an unpumped active ion.
Fig. 5.
Fig. 5. Total emission spectrum of the cascaded DFB WDM source at a maximum pump power.
Fig. 6.
Fig. 6. OSA spectra of DFB 1 laser at varying temperatures, from 20°C to 40°C, showing d λ / d T of 0.02 nm/°C.
Fig. 7.
Fig. 7. Temperature-dependent wavelength shift of lasers in a cascaded DFB structure shows gradual changes in 20°C–40°C (0.02 nm/°C) and uniformity across all channels.

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