Abstract

We have observed beam coupling and degenerate four-wave mixing in high-resistivity, undoped GaAs at 1.06 μm that is due to the photorefractive effect. The photorefractive species is thought to be the deep donor EL2. The measured values of two-wave gain are comparable with those measured in Bi12SiO20. The response time is measured to be 20 μsec at an intensity of 4 W/cm2. This exceptionally fast photorefractive response time (compared with that of oxide electro-optic materials) is due primarily to the large mobility of GaAs.

© 1984 Optical Society of America

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