Abstract

The dependence of threshold current density and lateral-index difference for transverse guiding in a 1.55-μm InGaAsP/InP ridge-waveguide laser on the number of cladding layers, their thicknesses, and their compositions is presented. It is found that two cladding layers of intermediate band-gap InGaAsP (λg = 1.2−1.3 μm) are desirable to reduce the threshold current density and to reduce its sensitivity to layer-thickness variations. The use of active- and cladding-layer thicknesses between 0.1 and 0.15 μm minimizes the threshold current density and its sensitivity to layer-thickness variations. This regime of layer thicknesses results in relatively strong lateral-index guiding (Δneff ≈ 0.06) in the 1.55-μm ridge-waveguide laser structure.

© 1984 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. D. Botez, IEEE J. Quantum Electron. QE-18, 865 (1982).
    [Crossref]
  2. K. Iga, Appl. Opt. 19, 2940 (1980).
    [Crossref] [PubMed]
  3. S. Wang, C. Chen, A. S. Liao, L. Figueroa, IEEE J. Quantum Electron. QE-17, 453 (1977).
  4. J. Buus, IEEE J. Quantum Electron. QE-18, 1083 (1982).
    [Crossref]
  5. M. Ueno, I. Sakuma, T. Furuse, Y. Matsumoto, H. Kawano, Y. Idi, S. Matsumoto, IEEE J. Quantum Electron. QE-17, 1930 (1981).
    [Crossref]
  6. I. P. Kaminov, L. W. Stulz, J. S. Ko, A. G. Dentai, R. E. Nahory, J. C. DeWinter, R. L. Hartman, IEEE J. Quantum Electron. QE-19, 1312 (1983).
    [Crossref]
  7. P. Chandra, L. A. Coldren, K. E. Strenge, Electron. Lett. 17, 6 (1981).
    [Crossref]
  8. J. Manning, R. Olshansky, C. B. Su, IEEE J. Quantum Electron. QE-19, 1525 (1983).
    [Crossref]
  9. H. C. Casey, M. B. Panish, Heterostructure Lasers (Academic, New York, 1978), Vol. B, p. 183.
  10. W. Streifer, R. D. Burnham, D. R. Scifries, Opt. Lett. 8, 283 (1983).
    [Crossref] [PubMed]
  11. N. K. Dutta, R. J. Nelson, J. Appl. Phys. 53, 74 (1982).
    [Crossref]

1983 (3)

I. P. Kaminov, L. W. Stulz, J. S. Ko, A. G. Dentai, R. E. Nahory, J. C. DeWinter, R. L. Hartman, IEEE J. Quantum Electron. QE-19, 1312 (1983).
[Crossref]

J. Manning, R. Olshansky, C. B. Su, IEEE J. Quantum Electron. QE-19, 1525 (1983).
[Crossref]

W. Streifer, R. D. Burnham, D. R. Scifries, Opt. Lett. 8, 283 (1983).
[Crossref] [PubMed]

1982 (3)

D. Botez, IEEE J. Quantum Electron. QE-18, 865 (1982).
[Crossref]

N. K. Dutta, R. J. Nelson, J. Appl. Phys. 53, 74 (1982).
[Crossref]

J. Buus, IEEE J. Quantum Electron. QE-18, 1083 (1982).
[Crossref]

1981 (2)

M. Ueno, I. Sakuma, T. Furuse, Y. Matsumoto, H. Kawano, Y. Idi, S. Matsumoto, IEEE J. Quantum Electron. QE-17, 1930 (1981).
[Crossref]

P. Chandra, L. A. Coldren, K. E. Strenge, Electron. Lett. 17, 6 (1981).
[Crossref]

1980 (1)

1977 (1)

S. Wang, C. Chen, A. S. Liao, L. Figueroa, IEEE J. Quantum Electron. QE-17, 453 (1977).

Botez, D.

D. Botez, IEEE J. Quantum Electron. QE-18, 865 (1982).
[Crossref]

Burnham, R. D.

Buus, J.

J. Buus, IEEE J. Quantum Electron. QE-18, 1083 (1982).
[Crossref]

Casey, H. C.

H. C. Casey, M. B. Panish, Heterostructure Lasers (Academic, New York, 1978), Vol. B, p. 183.

Chandra, P.

P. Chandra, L. A. Coldren, K. E. Strenge, Electron. Lett. 17, 6 (1981).
[Crossref]

Chen, C.

S. Wang, C. Chen, A. S. Liao, L. Figueroa, IEEE J. Quantum Electron. QE-17, 453 (1977).

Coldren, L. A.

P. Chandra, L. A. Coldren, K. E. Strenge, Electron. Lett. 17, 6 (1981).
[Crossref]

Dentai, A. G.

I. P. Kaminov, L. W. Stulz, J. S. Ko, A. G. Dentai, R. E. Nahory, J. C. DeWinter, R. L. Hartman, IEEE J. Quantum Electron. QE-19, 1312 (1983).
[Crossref]

DeWinter, J. C.

I. P. Kaminov, L. W. Stulz, J. S. Ko, A. G. Dentai, R. E. Nahory, J. C. DeWinter, R. L. Hartman, IEEE J. Quantum Electron. QE-19, 1312 (1983).
[Crossref]

Dutta, N. K.

N. K. Dutta, R. J. Nelson, J. Appl. Phys. 53, 74 (1982).
[Crossref]

Figueroa, L.

S. Wang, C. Chen, A. S. Liao, L. Figueroa, IEEE J. Quantum Electron. QE-17, 453 (1977).

Furuse, T.

M. Ueno, I. Sakuma, T. Furuse, Y. Matsumoto, H. Kawano, Y. Idi, S. Matsumoto, IEEE J. Quantum Electron. QE-17, 1930 (1981).
[Crossref]

Hartman, R. L.

I. P. Kaminov, L. W. Stulz, J. S. Ko, A. G. Dentai, R. E. Nahory, J. C. DeWinter, R. L. Hartman, IEEE J. Quantum Electron. QE-19, 1312 (1983).
[Crossref]

Idi, Y.

M. Ueno, I. Sakuma, T. Furuse, Y. Matsumoto, H. Kawano, Y. Idi, S. Matsumoto, IEEE J. Quantum Electron. QE-17, 1930 (1981).
[Crossref]

Iga, K.

Kaminov, I. P.

I. P. Kaminov, L. W. Stulz, J. S. Ko, A. G. Dentai, R. E. Nahory, J. C. DeWinter, R. L. Hartman, IEEE J. Quantum Electron. QE-19, 1312 (1983).
[Crossref]

Kawano, H.

M. Ueno, I. Sakuma, T. Furuse, Y. Matsumoto, H. Kawano, Y. Idi, S. Matsumoto, IEEE J. Quantum Electron. QE-17, 1930 (1981).
[Crossref]

Ko, J. S.

I. P. Kaminov, L. W. Stulz, J. S. Ko, A. G. Dentai, R. E. Nahory, J. C. DeWinter, R. L. Hartman, IEEE J. Quantum Electron. QE-19, 1312 (1983).
[Crossref]

Liao, A. S.

S. Wang, C. Chen, A. S. Liao, L. Figueroa, IEEE J. Quantum Electron. QE-17, 453 (1977).

Manning, J.

J. Manning, R. Olshansky, C. B. Su, IEEE J. Quantum Electron. QE-19, 1525 (1983).
[Crossref]

Matsumoto, S.

M. Ueno, I. Sakuma, T. Furuse, Y. Matsumoto, H. Kawano, Y. Idi, S. Matsumoto, IEEE J. Quantum Electron. QE-17, 1930 (1981).
[Crossref]

Matsumoto, Y.

M. Ueno, I. Sakuma, T. Furuse, Y. Matsumoto, H. Kawano, Y. Idi, S. Matsumoto, IEEE J. Quantum Electron. QE-17, 1930 (1981).
[Crossref]

Nahory, R. E.

I. P. Kaminov, L. W. Stulz, J. S. Ko, A. G. Dentai, R. E. Nahory, J. C. DeWinter, R. L. Hartman, IEEE J. Quantum Electron. QE-19, 1312 (1983).
[Crossref]

Nelson, R. J.

N. K. Dutta, R. J. Nelson, J. Appl. Phys. 53, 74 (1982).
[Crossref]

Olshansky, R.

J. Manning, R. Olshansky, C. B. Su, IEEE J. Quantum Electron. QE-19, 1525 (1983).
[Crossref]

Panish, M. B.

H. C. Casey, M. B. Panish, Heterostructure Lasers (Academic, New York, 1978), Vol. B, p. 183.

Sakuma, I.

M. Ueno, I. Sakuma, T. Furuse, Y. Matsumoto, H. Kawano, Y. Idi, S. Matsumoto, IEEE J. Quantum Electron. QE-17, 1930 (1981).
[Crossref]

Scifries, D. R.

Streifer, W.

Strenge, K. E.

P. Chandra, L. A. Coldren, K. E. Strenge, Electron. Lett. 17, 6 (1981).
[Crossref]

Stulz, L. W.

I. P. Kaminov, L. W. Stulz, J. S. Ko, A. G. Dentai, R. E. Nahory, J. C. DeWinter, R. L. Hartman, IEEE J. Quantum Electron. QE-19, 1312 (1983).
[Crossref]

Su, C. B.

J. Manning, R. Olshansky, C. B. Su, IEEE J. Quantum Electron. QE-19, 1525 (1983).
[Crossref]

Ueno, M.

M. Ueno, I. Sakuma, T. Furuse, Y. Matsumoto, H. Kawano, Y. Idi, S. Matsumoto, IEEE J. Quantum Electron. QE-17, 1930 (1981).
[Crossref]

Wang, S.

S. Wang, C. Chen, A. S. Liao, L. Figueroa, IEEE J. Quantum Electron. QE-17, 453 (1977).

Appl. Opt. (1)

Electron. Lett. (1)

P. Chandra, L. A. Coldren, K. E. Strenge, Electron. Lett. 17, 6 (1981).
[Crossref]

IEEE J. Quantum Electron. (6)

J. Manning, R. Olshansky, C. B. Su, IEEE J. Quantum Electron. QE-19, 1525 (1983).
[Crossref]

D. Botez, IEEE J. Quantum Electron. QE-18, 865 (1982).
[Crossref]

S. Wang, C. Chen, A. S. Liao, L. Figueroa, IEEE J. Quantum Electron. QE-17, 453 (1977).

J. Buus, IEEE J. Quantum Electron. QE-18, 1083 (1982).
[Crossref]

M. Ueno, I. Sakuma, T. Furuse, Y. Matsumoto, H. Kawano, Y. Idi, S. Matsumoto, IEEE J. Quantum Electron. QE-17, 1930 (1981).
[Crossref]

I. P. Kaminov, L. W. Stulz, J. S. Ko, A. G. Dentai, R. E. Nahory, J. C. DeWinter, R. L. Hartman, IEEE J. Quantum Electron. QE-19, 1312 (1983).
[Crossref]

J. Appl. Phys. (1)

N. K. Dutta, R. J. Nelson, J. Appl. Phys. 53, 74 (1982).
[Crossref]

Opt. Lett. (1)

Other (1)

H. C. Casey, M. B. Panish, Heterostructure Lasers (Academic, New York, 1978), Vol. B, p. 183.

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (3)

Fig. 1
Fig. 1

(a) Comparison of threshold current density for four semi-infinite symmetric cladding layers. (b) Comparison of threshold current for zero (—), one (– –), and two (. . .) cladding layers of thickness 0.2 μm and composition λ = 1.3 μm.

Fig. 2
Fig. 2

(a) Comparison of threshold current density for two symmetric InGaAsP cladding layers of thickness 0.2 μm and various compositions. (b) Threshold current density contours in the ta, tc plane for two symmetric λ = 1.3-μm InGaAsP cladding layers (tc1 = tc2).

Fig. 3
Fig. 3

(a) Dependence of lateral effective-index change on active-layer thickness for two symmetic λ = 1.3-μm InGaAsP cladding layers of various thicknesses, (b) Dependence of lateral-index change on either the upper or lower thickness of the λ = 1.3-μm InGaAsP cladding layers.

Equations (5)

Equations on this page are rendered with MathJax. Learn more.

g = ( A J rad / t a ) B .
Γ g th = α + ( 1 / L ) ln ( 1 / R ) = α total .
J rad , th t a = 1 A ( α total Γ + B ) .
J nonrad , th t a 0.4 ( J rad , th t a ) 3 / 2 ,
J th t a [ B A + α total A 1 Γ + 0.4 ( B A + α total A 1 Γ ) 3 / 2 ] .

Metrics