Abstract

Complete statistical randomization of the direction of propagation of light trapped in semiconductor films can result in a large absorption enhancement. We have employed a calorimetric technique, photothermal deflection spectroscopy, to monitor the absorption of a-SiHx films textured by the natural lithography process. The observed enhancement factors, as high as 11.5, are consistent with full internal phase-space randomization of the incoming light.

© 1983 Optical Society of America

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