Abstract

The realization of monolithic integration of a stable III–V laser on a standard silicon-on-insulator (SOI) substrate has been regarded as a challenging technology for silicon-based photonic integration circuits (PICs). Here, we successfully demonstrated the electrically pumped P-doped 1300 nm InAs/GaAs quantum dot (QD) laser epitaxially grown on {111}-faceted SOI hollow substrates. These III–V QD lasers, which are epitaxially grown on an SOI substrate, generally exhibit strong thermal accumulation due to the oxide layer underneath. By applying a double-side heat dissipation design, the maximum operation temperature of the SOI-based InAs/GaAs QD laser under a continuous-wave (CW) operation mode is ramped up to 35°C from 20°C. Moreover, the thermal profile simulation of three different structures has also been carried out to show the effectiveness of the top heat sink design in order to improve laser performance. An integrated thermal shunt design is proposed to improve heat dissipation without using the external top heat sink. The successful realization of room-temperature SOI-based InAs/GaAs QD lasers pave a viable way for integrating light sources in PICs.

© 2021 Optical Society of America

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