Abstract

Silicon photonics has become the preferred candidate for technologies applicable to multifarious fields. However, the applications are strictly limited by the intrinsic in-band photo effect of silicon. Herein, near-infrared photodetectors that break through the silicon bandgap by Er/O hyperdoping are fabricated, potentially extending their applications into telecommunications, low-light-level night vision, medical treatment, and others. Er/O-hyperdoped silicon was achieved as an infrared light absorption layer through ion implantation. The lattice damage caused by ion implantation was repaired by a deep cooling process in which high-temperature samples were cooled by helium flushing cooled by liquid nitrogen. Traditional junction and metallization processes were performed to form a photodiode. We demonstrate that the device has a spectral range up to the wavelength of 1568 nm, a maximum responsivity of 165 µA/W at 1310 nm, and 3 dB cutoff bandwidth up to 3 kHz. Finally, temperature-dependent optical-electrical characteristics were measured to demonstrate the activation mechanism of Er/O in silicon. This Letter proves silicon’s potential in realizing extended infrared detection at room temperature, and it provides a possible way to fabricate infrared optoelectronics and signal processing integrated chips on a CMOS (complementary metal-oxide-semiconductor) platform.

© 2021 Optical Society of America

Full Article  |  PDF Article
More Like This
Sub-bandgap absorption and photo-response of molybdenum heavily doped black silicon fabricated by a femtosecond laser

Yang Yang, Ji-Hong Zhao, Chao Li, Qi-Dai Chen, Zhan-Guo Chen, and Hong-Bo Sun
Opt. Lett. 46(13) 3300-3303 (2021)

Visible-blind short-wavelength infrared photodetector with high responsivity based on hyperdoped silicon

Xiaodong Qiu, Zijing Wang, Xiaotong Hou, Xuegong Yu, and Deren Yang
Photon. Res. 7(3) 351-358 (2019)

High-speed and high-responsivity p-i-n waveguide photodetector at a 2 µm wavelength with a Ge0.92Sn0.08/Ge multiple-quantum-well active layer

Haibo Wang, Jishen Zhang, Gong Zhang, Yue Chen, Yi-Chiau Huang, and Xiao Gong
Opt. Lett. 46(9) 2099-2102 (2021)

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Supplementary Material (1)

NameDescription
Supplement 1       Supplemental Document

Data Availability

Data underlying the results presented in this Letter are not publicly available at this time but may be obtained from the authors upon reasonable request.

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Figures (4)

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Equations (3)

You do not have subscription access to this journal. Equations are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription