Ultra-compact polarization-independent 3 dB power splitter in silicon

Aoxue Zhang; Aoxue Zhang; Aoxue Zhang; Lipeng Xia; Lipeng Xia; Lipeng Xia; Ting Li; Ting Li; Ting Li; Chang Chang; Chang Chang; Chang Chang; Peiji Zhou; Xiaochuan Xu; Yi Zou; Yi Zou

doi:10.1364/OL.439320

Optics Letters
Vol. 46,
Issue 19,
pp. 5000-5003
(2021)
•https://doi.org/10.1364/OL.439320

Ultra-compact polarization-independent 3 dB power splitter in silicon

Aoxue Zhang, Lipeng Xia, Ting Li, Chang Chang, Peiji Zhou, Xiaochuan Xu, and Yi Zou

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Aoxue Zhang, Lipeng Xia, Ting Li, Chang Chang, Peiji Zhou, Xiaochuan Xu, and Yi Zou, "Ultra-compact polarization-independent 3 dB power splitter in silicon," Opt. Lett. 46, 5000-5003 (2021)

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- Integrated Optics
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About this Article
History
- Original Manuscript: August 2, 2021
- Revised Manuscript: September 8, 2021
- Manuscript Accepted: September 10, 2021
- Published: September 30, 2021

Abstract

We experimentally demonstrate an ultra-compact polarization-independent 3 dB power splitter on the silicon-on-insulator platform. Subwavelength structure engineering is employed to balance the coupling coefficients of TE and TM polarizations as well as a footprint reduction. The device possesses ultra-compact (${1.2}\;\unicode{x00B5}{\rm m} \times {2.62}\;\unicode{x00B5}{\rm m}$) and polarization-independent features with an operating bandwidth over 50 nm (from 1540 to 1590 nm).

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Reference	Footprint (µm²)	Insertion Loss (dB)	BW (nm)	Type	Exp.
[9]	$1.35 \times 50$	$< 1$	1520–1630	DC	Exp.
[12]	$1.11 \times 3.5$	$< 1$	N/A	DC	Exp.
[13]	$2.11 \times 8.5$	$< 0.1$	1480–1650	DC	Simu.
[14]	$1.8 \times 8.97$	$< 0.2$	N/A	MMI	Simu.
[15]	$2 \times 1.92$	0.39	1510–1615	MMI	Simu.
[16]	$0.93 \times 5$	$< 0.2$	1530–1600	Y-junction	Exp.
This work	$1.2 \times 2.62$	$< 1$	1540–1590	DC	Exp.

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