Abstract

Direct epitaxy of InP quantum dot (QD) lasers on silicon (Si) provides an on-chip red laser source for integrated Si photonics with different applications. Here, we demonstrate the first, to the best of our knowledge, InP QD lasers directly grown on (001) Si. Combining highly emissive InP QDs and a GaAs/Si template with low defect density, continuous-wave (CW) lasing of micro-disk lasers (MDLs) on Si is achieved at room temperature. The lowest threshold of MDLs on Si is ${\sim}{{500}}\;{\rm{nW}}$, without considering the micro-disk surface absorption efficiency of the pump power. The MDLs grown on the native GaAs substrate with the same growth and fabrication process are compared using statistical data analysis. Similar material characterization results and device performances on these two substrates further confirm the performance of QD lasers on Si. This demonstration paves the way for future realization of integrated photonic circuits with red and near-infrared (NIR) lasers on Si.

© 2021 Optical Society of America

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Data underlying the results presented in this Letter are not publicly available at this time but may be obtained from the authors upon reasonable request.

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