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Temperature-dependent characteristics of GeSn/Ge multiple-quantum-well photoconductors on silicon

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Abstract

Temperature-dependent characteristics of GeSn/Ge multiple-quantum-well (MQW) photoconductors (PCs) on silicon substrate were investigated. The high quality GeSn/Ge MQW epitaxial structure was grown on a silicon substrate using low temperature molecular beam epitaxy techniques with atomically precise thickness control. Surface-illuminated GeSn/Ge MQW PCs were fabricated using complementary metal-oxide-semiconductor-compatible processing and characterized in a wide temperature range of 55–320 K. The photodetection range was extended to $\lambda = {2235}\;{\rm nm}$ at $T = {320}\;{\rm K}$ due to bandgap shrinkage with Sn alloying. Measured spectral responsivity was enhanced at reduced temperatures. These results provide better understanding of GeSn/Ge MQW structures for efficient short-wave infrared photodetection.

© 2021 Optical Society of America

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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