Abstract

Molybdenum (Mo)-doped black silicon (Si) is obtained by using femtosecond laser irradiation. The concentration of Mo atoms at the depth from 10 to 200 nm has exceeded ${{10}^{19}}\;{{\rm cm}^{- 3}}$. In contrast, the carrier concentration in the Mo-doped layer is lower than ${{10}^{15}}\;{{\rm cm}^{- 3}}$. The surface morphologies with ripple and conical spike microstructures are formed by changing the pulsed laser fluences. The Mo-doped Si samples exhibit a sub-bandgap (${1100}{\sim}{2500}\;{\rm nm}$) absorptance of more than 60% at a wavelength of 1310 nm. A Mo-doped Si photodetector is made, and the responsivity of the device for 1310 nm is up to 76 mA/W at a ${-}{10}\;{\rm V}$ bias.

© 2021 Optical Society of America

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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