Abstract
The ${{\rm MoO}_{\rm x}}/{\rm Al}$ electrode was designed and fabricated on p-GaN and sapphire with good ohmic behavior and decent deep ultraviolet (DUV) reflectivity, respectively. The influences of ${{\rm MoO}_{\rm x}}$ thickness and annealing condition on the electrical and optical behaviors of the ${{\rm MoO}_{\rm x}}/{\rm Al}$ structure were investigated. Surface morphology of ${{\rm MoO}_{\rm x}}$ with different thicknesses reveals a 3D growth mode. Partial decomposition of ${{\rm MoO}_{\rm x}}$ was discovered, which helps in the formation of ohmic contact between ${{\rm MoO}_{\rm x}}$ and Al. The potential for application in deep ultraviolet light-emitting-diodes (DUV-LEDs) has also been demonstrated.
© 2020 Optical Society of America
Full Article | PDF ArticleMore Like This
Zhefu Liao, Zhenxing Lv, Ke Sun, and Shengjun Zhou
Opt. Lett. 48(16) 4229-4232 (2023)
Jun Ho Son, Gwan Ho Jung, and Jong-Lam Lee
Opt. Lett. 33(24) 2907-2909 (2008)
Sai Pan, Kuili Chen, Yan Guo, Zexiang Liu, Yugang Zhou, Rong Zhang, and Youdou Zheng
Opt. Express 30(25) 44933-44942 (2022)