Abstract

III-nitride-based distributed Bragg reflectors (DBRs) are advantageous in being in-situ integrated in III-nitride devices, and the bandgaps and their other corresponding optical parameters are tunable. However, a growing nitride DBR with low strain and high reflectivity remains a challenge. Here we demonstrate an ${\rm{AlN}}/{\rm{I}}{{\rm{n}}_x}{\rm{A}}{{\rm{l}}_{1 - x}}{\rm{N}}$ DBR grown on Si and SiO2 substrates by reactive radio-frequency magnetron sputtering. Reflectance wavelengths covering the whole visible regions of the visible spectrum were achieved by rationally tuning the indium composition in ${\rm{I}}{{\rm{n}}_x}{\rm{A}}{{\rm{l}}_{1 - x}}{\rm{N}}$ and each layer’s thickness of an ${\rm{AlN}}/{\rm{I}}{{\rm{n}}_x}{\rm{A}}{{\rm{l}}_{1 - x}}{\rm{N}}$ DBR. This Letter should advance the design and fabrication of nitride optical and optoelectrical devices by incorporating an ${\rm{AlN}}/{\rm{I}}{{\rm{n}}_x}{\rm{A}}{{\rm{l}}_{1 - x}}{\rm{N}}$ DBR, such as vertical-cavity surface-emitting laser (VCSEL) and RC LEDs.

© 2020 Optical Society of America

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