Abstract

We report high-performance lateral $p {\text -} i {\text -} n$ Ge waveguide photodetectors (WGPDs) on a Ge-on-insulator (GOI) platform that could be integrated with electronic–photonic integrated circuits (EPICs) for communication applications. The high-quality Ge layer affords a low absolute dark current. A tensile strain of 0.144% in the Ge active layers narrows the direct bandgap to enable efficient photodetection over the entire range of C- and L-bands. The low-index insulator layer enhances optical confinement, resulting in a good optical responsivity. These results demonstrate the feasibility of planar Ge WGPDs for monolithic GOI-based EPICs.

© 2020 Optical Society of America

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