Add to BibSonomy
Abstract
The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of $26\,\,\unicode{x00B5}{\rm m}$ diameter is presented. Record low dark count rates are observed, remaining less than 100 K counts per second at 6.6% excess bias and 125 K. Single-photon detection efficiencies are found to be up to 29.4%, and are shown to be temperature insensitive. These performance characteristics lead to a significantly reduced noise equivalent power (NEP) of $7.7 \times {10^{- 17}} \;{\rm W} {{\rm Hz}^{- \frac{1}{2}}}$ compared to prior planar devices, and represent a two orders of magnitude reduction in NEP compared to previous Ge-on-Si mesa devices of a comparable diameter. Low jitter values of $134 \pm 10\;{\rm ps} $ are demonstrated.
© 2020 Optical Society of America
Full Article | PDF ArticleMore Like This
Kateryna Kuzmenko, Peter Vines, Abderrahim Halimi, Robert J. Collins, Aurora Maccarone, Aongus McCarthy, Zoë M. Greener, Jarosław Kirdoda, Derek C. S. Dumas, Lourdes Ferre Llin, Muhammad M. Mirza, Ross W. Millar, Douglas J. Paul, and Gerald S. Buller
Opt. Express 28(2) 1330-1344 (2020)
Jishen Zhang, Haibo Wang, Gong Zhang, Kian Hua Tan, Satrio Wicaksono, Haiwen Xu, Chao Wang, Yue Chen, Yan Liang, Charles Ci Wen Lim, Soon-Fatt Yoon, and Xiao Gong
Opt. Lett. 46(11) 2670-2673 (2021)
Peter W. R. Connolly, Ximing Ren, Aongus McCarthy, Hanning Mai, Federica Villa, Andrew J. Waddie, Mohammad R. Taghizadeh, Alberto Tosi, Franco Zappa, Robert K. Henderson, and Gerald S. Buller
Appl. Opt. 59(14) 4488-4498 (2020)