Composite Yb:YAG/sapphire thin-disk active elements for high-energy high-average power lasers

Ivan Kuznetsov; Alexey Pestov; Ivan Mukhin; Mikhail Volkov; Maria Zorina; Nikolay Chkhalo; Oleg Palashov

doi:10.1364/OL.384898

Optics Letters
Vol. 45,
Issue 2,
pp. 387-390
(2020)
•https://doi.org/10.1364/OL.384898

Composite Yb:YAG/sapphire thin-disk active elements for high-energy high-average power lasers

Ivan Kuznetsov, Alexey Pestov, Ivan Mukhin, Mikhail Volkov, Maria Zorina, Nikolay Chkhalo, and Oleg Palashov

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Ivan Kuznetsov, Alexey Pestov, Ivan Mukhin, Mikhail Volkov, Maria Zorina, Nikolay Chkhalo, and Oleg Palashov, "Composite Yb:YAG/sapphire thin-disk active elements for high-energy high-average power lasers," Opt. Lett. 45, 387-390 (2020)

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Abstract

Composite active elements (AEs) of thin-disk geometry with an anti-amplified-spontaneous-emission (ASE) cap were created for the first time from dissimilar materials (Yb:YAG and sapphire crystals) using the surface-activated direct bonding method based on etching the surfaces with an Ar ion beam and then bringing them into optical contact. Using a sapphire anti-ASE cap allows the thermal lens optical power and the ${{\rm M}^2}$ factor to be reduced significantly compared with the same AE with a YAG anti-ASE cap, and ${{\rm M}^2}$ compared to standard Yb:YAG disks without an anti-ASE cap. Lasing with 320 W average power and ${\sim}{50}\% $ slope efficiency was obtained.

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	Yb:YAG	Sapphire	Diamond	YAG
Thermal conductivity (W/m/K)	$- 8 e - 3 * T + 8.78$ approx. of [15]	27 [16]	1300 [17]	$2.4 e - 5 * T^{2} - 0.0357 * T + 18.6$ approx. of [15]
Thermal expansion $c o e f f i c i e n t * 10^{- 6}$ (1/K)	( $1.06 + 0.018 * T - 7.86 e 6 * T^{2}$ ) approx. of [18]	$5 (⊥) 5.6 (‖ c)$ [16]	1 [17]	same as in Yb:YAG
$d n / d T * 10^{- 6}$ (1/K)	12.1 [18]	12.6 [17]		12.1 [18]
Young’s modulus (GPa)	280 [17]	400 [17]	1100 [17]	280 [17]
Poisson ratio	0.24 [17]	0.23 [17]	0.1 [17]	0.24 [17]

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