Abstract

Arrayed waveguide gratings (AWGs) working in the 4.7 µm wavelength range are reported on silicon-on-insulator waveguides with 1500 nm thick silicon and 2 µm thick buried oxide layers. For eight channel devices, three different channel spacings (200 GHz, 100 GHz, and 50 GHz) with cross talk levels of ${-}{32.31}\;{\rm{dB}}$, ${-}{31.87}\;{\rm{dB}}$, and ${-}{27.28}\;{\rm{dB}}$ and insertion loss levels of ${-}{1.43}\;{\rm{dB}}$, ${-}{4.2}\;{\rm{dB}}$, and ${-}{2.3}\;{\rm{dB}}$, respectively, are demonstrated. Fourteen channel AWGs with 170 GHz channel spacing and 16 channel AWGs with 87 GHz channel spacing are shown to have a cross talk value of ${-}{21.67}\;{\rm{dB}}$ and ${-}{24.30}\;{\rm{dB}}$ and insertion loss value of ${-}{4.2}\;{\rm{dB}}$ and ${-}{3.8}\;{\rm{dB}}$, respectively. Two AWGs with 10 nm difference in channel peak are designed, and the measurements show a 9.3 nm difference. The transmission spectrum shift as a function of temperature is found to be 0.22 nm/°C.

© 2020 Optical Society of America

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