Abstract

We study the weakly guided silicon nitride waveguide as an on-chip power delivery solution for dielectric laser accelerators (DLAs). We focus on the two main limiting factors on the waveguide network for DLAs: the optical damage and nonlinear characteristics. The typical delivered fluence at the onset of optical damage is measured to be 0.19J/cm2 at a 2 μm central wavelength and 250 fs pulse width. This damage fluence is lower than that of the bulk Si3N4 (0.65J/cm2), but higher than that of bulk silicon (0.17J/cm2). We also report the nonlinearity-induced spectrum and phase variance of the output pulse at this pulse duration. We find that a total waveguide length within 3 mm is sufficient to avoid significant self-phase modulation effects when operating slightly below the damage threshold. We also estimate that one SiNx waveguide can power 70 μm silicon dual pillar DLAs from a single side, based on the results from the recent free-space DLA experiment.

© 2019 Optical Society of America

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Supplementary Material (1)

NameDescription
» Code 1       Nonlinear Schrodinger equation solver.

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