Abstract

A gate-tunable plasmonic optical filter incorporating a subwavelength patterned metal–insulator–metal metasurface heterostructure is proposed. An additional thin transparent conducting oxide (TCO) layer is embedded in the insulator layer to form a double metal–oxide-semiconductor configuration. Heavily n-doped indium tin oxide (ITO) is employed as the TCO material, whose optical property can be electrically tuned by the formation of a thin active epsilon-near-zero layer at the ITO–oxide interfaces. Full-wave electromagnetic simulations show that amplitude modulation and shift of transmission peak are achievable with 3–5 V applied bias, depending on the application. Moreover, the modulation strength and transmission peak shift increase with a thinner ITO layer. This work is an essential step toward a realization of next-generation compact photonic/plasmonic integrated devices.

© 2019 Optical Society of America

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