Abstract

We experimentally demonstrate integrated high-power germanium photodetectors (Ge PDs) by means of light field manipulation. Compared to the conventional Ge PD, the proposed structures have more uniform light distributions in the absorption region. A maximum photocurrent of 27.1 mA at $-3\mathrm{V}$ bias voltage is experimentally obtained, demonstrating 50% more photocurrent generation under high-power illumination. Bandwidth and modulated signal measurements also verify the improved power handling capability. The proposed high-power Ge PD with compact size and large fabrication tolerance will bring new applications for silicon photonics.

© 2019 Optical Society of America

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