Abstract

An extended short-wavelength nBn InAs/GaSb/AlSb type-II superlattice-based infrared focal plane array imager was demonstrated. A newly developed InAs0.10Sb0.90/GaSb superlattice design was used as the large-bandgap electron barrier in this photodetector. The large band gap electron-barrier design in this nBn photodetector architecture leads to the device having lower dark current densities. A new bi-layer etch-stop scheme using a combination of InAs0.91Sb0.09 bulk and AlAs0.1Sb0.9/GaSb superlattice layers was introduced to allow complete substrate removal and a shorter wavelength cut-on. Test pixels exhibit 100% cutoff wavelengths of 2.30 and 2.48μm at 150 and 300 K, respectively. The devices achieve saturated quantum efficiency values of 59.7% and 63.8% at 150 and 300 K, respectively, under backside illumination and without any antireflection coating. At 150 K, photodetectors exhibit dark current density of 8.75×108A/cm2 under 400mV applied bias, providing specific detectivity of 2.82×1012cm·Hz1/2/W at 1.78 μm. At 300 K, the dark current density reaches 4.75×102A/cm2 under 200mV bias, providing a specific detectivity of 8.55×109cm·Hz1/2/W 1.78 μm.

© 2018 Optical Society of America

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