Abstract

In this Letter, we investigate the nonlinear effects of extremely intense few-cycle terahertz (THz) pulses (generated from the organic crystal $4\text{-}N\mathrm{N}$, $N\mathrm{N}$-dimethylamino-$4^{\prime }{4}^{\prime }\text{-}{N}^{\prime }{\mathrm{N}}^{\prime }$-methyl-stilbazolium 2, 4, 6 trimethylbenzenesulfonate, with peak electrical fields of a few MV/cm) on the carrier dynamics in n-doped semiconductor thin film ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$. By performing open-aperture Z-scan measurements and recording the transmitted THz energy through semiconductor sample, we observed a strong THz absorption bleaching effect at high fields, followed by an absorption enhancement at even higher fields. We attribute our observations to a crossover from pure intraband carrier dynamics to an interplay between intraband carrier heating and interband carrier generations.

© 2018 Optical Society of America

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